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P6KE7.5CAHB0G P6KE7.5CAHB0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 6.4VWM 11.3VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 55A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TST20L100CW C0G TST20L100CW C0G Taiwan Semiconductor Corporation TST20L100CW-TST20L200CW%20_C2104.pdf Description: DIODE SCHOTTKY 100V 10A TO220AB
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MBRF20L100CT C0G MBRF20L100CT C0G Taiwan Semiconductor Corporation MBRF20L100CT%20SERIES_F13.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBR20L100CTHC0G MBR20L100CTHC0G Taiwan Semiconductor Corporation MBR20L100CT%20SERIES_H2104.pdf Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
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MBRF20L100CTHC0G MBRF20L100CTHC0G Taiwan Semiconductor Corporation MBRF20L100CT%20SERIES_G2105.pdf Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
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DBLS105GHRDG DBLS105GHRDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 600V 1A DBLS
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HDBLS105G RDG HDBLS105G RDG Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 600V 1A DBLS
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HDBLS105G C1G HDBLS105G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 600V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1PGSMA4752 M2G 1PGSMA4752 M2G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_A1707.pdf Description: DIODE, ZENER, 33V
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SRAS2020 MNG SRAS2020 MNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_L15.pdf Description: DIODE SCHOTTKY 20V 20A TO263AB
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SRAS2020HMNG SRAS2020HMNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_L15.pdf Description: DIODE SCHOTTKY 20V 20A TO263AB
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TSM3911DCX6 RFG TSM3911DCX6 RFG Taiwan Semiconductor Corporation Description: MOSFET 2P-CH 20V 2.2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 45000 Stücke:
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3000+0.39 EUR
6000+0.37 EUR
9000+0.34 EUR
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TSM3911DCX6 RFG TSM3911DCX6 RFG Taiwan Semiconductor Corporation Description: MOSFET 2P-CH 20V 2.2A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
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100+0.62 EUR
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LL4007G L0G LL4007G L0G Taiwan Semiconductor Corporation LL4001G%20SERIES_F2004.pdf Description: DIODE STANDARD 1000V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BZT55B3V9 L1G BZT55B3V9 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.9V 500MW MINI MELF
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TS13005CK B0G Taiwan Semiconductor Corporation TS13005CK_VerD1609.pdf Description: TRANS NPN 400V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 425mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
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1PGSMA200Z R3G 1PGSMA200Z R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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1PGSMA200Z R3G 1PGSMA200Z R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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26+0.69 EUR
31+0.58 EUR
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1PGSMA4763 R3G 1PGSMA4763 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_A1707.pdf Description: DIODE ZENER
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1PGSMA4763 R3G 1PGSMA4763 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_A1707.pdf Description: DIODE ZENER
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MBRF10H200CT C0G MBRF10H200CT C0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_L13.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
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S4D R7G S4D R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 200V 4A DO214AB
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S4D R7G S4D R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 200V 4A DO214AB
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SMCJ28CA V7G SMCJ28CA V7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ28CA R7G SMCJ28CA R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 28V 45.4V DO214AB
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SMCJ28CA R7G SMCJ28CA R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 28V 45.4V DO214AB
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SMCJ28CA V6G SMCJ28CA V6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 28V 45.4V DO214AB
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SMCJ28CAHR7G SMCJ28CAHR7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 28V 45.4V DO214AB
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YBS3004G YBS3004G Taiwan Semiconductor Corporation YBS3004G SERIES_D2103.pdf Description: BRIDGE RECT 1PHASE 400V 3A YBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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YBS3004G YBS3004G Taiwan Semiconductor Corporation YBS3004G SERIES_D2103.pdf Description: BRIDGE RECT 1PHASE 400V 3A YBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2961 Stücke:
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15+1.23 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
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ES2HA R3G ES2HA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE STANDARD 500V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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ES2HA R3G ES2HA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE STANDARD 500V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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SR16100 C0G SR16100 C0G Taiwan Semiconductor Corporation SR1620%20SERIES_I13.pdf Description: DIODE ARRAY SCHOTTKY 100V TO220
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SR16100HC0G SR16100HC0G Taiwan Semiconductor Corporation SR1620%20SERIES_I13.pdf Description: DIODE ARRAY SCHOTTKY 100V TO220
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SR16100PT C0G SR16100PT C0G Taiwan Semiconductor Corporation SR1620PT%20SERIES_H15.pdf Description: DIODE ARRAY SCHOTTKY 100V TO247
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SR16100PTHC0G SR16100PTHC0G Taiwan Semiconductor Corporation SR1620PT%20SERIES_H15.pdf Description: DIODE ARRAY SCHOTTKY 100V TO247
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SK26A M2G SK26A M2G Taiwan Semiconductor Corporation SK22A%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
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1KSMB33A M4G 1KSMB33A M4G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
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BZW06-13 A0G BZW06-13 A0G Taiwan Semiconductor Corporation BZW06%20SERIES_J1602.pdf Description: TVS DIODE 12.8V 27.2V DO204AC
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SMA6J22AHR3G SMA6J22AHR3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 22VWM 34.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 34.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMA6J22AHR3G SMA6J22AHR3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 22VWM 34.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 34.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ30CAHR5G SMBJ30CAHR5G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 30VWM 48.4VC DO214AA
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SMBJ33CA M4G SMBJ33CA M4G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMBJ33CAHM4G SMBJ33CAHM4G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
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KBP202G C2 Taiwan Semiconductor Corporation KBP201G-KBP207G%20_E13_DS.pdf Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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KBP202G C2G Taiwan Semiconductor Corporation KBP201G-KBP207G%20_E13_DS.pdf Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1SMB5927 M4G 1SMB5927 M4G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
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1SMB5927 R5G 1SMB5927 R5G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
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1SMB5927HM4G 1SMB5927HM4G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 12V 3W DO214AA
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1SMB5927HR5G 1SMB5927HR5G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
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TSM3404CX RFG TSM3404CX RFG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Produkt ist nicht verfügbar
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TSM3404CX RFG TSM3404CX RFG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Produkt ist nicht verfügbar
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BZD17C13P RQG BZD17C13P RQG Taiwan Semiconductor Corporation BZD17C%20SERIES_K15.pdf Description: DIODE ZENER 13V 800MW SUB SMA
Produkt ist nicht verfügbar
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BZD17C13P R3G BZD17C13P R3G Taiwan Semiconductor Corporation BZD17C%20SERIES_K15.pdf Description: DIODE ZENER 13V 800MW SUB SMA
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BZD27C13PHRVG BZD27C13PHRVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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BZD27C13P R3G BZD27C13P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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BZD27C13P RUG BZD27C13P RUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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BZD27C13PHMTG BZD27C13PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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BZD27C13PHRUG BZD27C13PHRUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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S5KBHR5G S5KBHR5G Taiwan Semiconductor Corporation S5GB%20SERIES_C1701.pdf Description: DIODE GEN PURP 800V 5A DO214AA
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
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P6KE7.5CAHB0G P6KE%20SERIES_P2203.pdf
P6KE7.5CAHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 55A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TST20L100CW C0G TST20L100CW-TST20L200CW%20_C2104.pdf
TST20L100CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO220AB
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
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MBRF20L100CT C0G MBRF20L100CT%20SERIES_F13.pdf
MBRF20L100CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Produkt ist nicht verfügbar
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MBR20L100CTHC0G MBR20L100CT%20SERIES_H2104.pdf
MBR20L100CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF20L100CTHC0G MBRF20L100CT%20SERIES_G2105.pdf
MBRF20L100CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DBLS105GHRDG DBLS101G%20SERIES_P2103.pdf
DBLS105GHRDG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A DBLS
Produkt ist nicht verfügbar
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HDBLS105G RDG HDBLS101G%20SERIES_G2103.pdf
HDBLS105G RDG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A DBLS
Produkt ist nicht verfügbar
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HDBLS105G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS105G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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1PGSMA4752 M2G 1PGSMA%20SERIES_A1707.pdf
1PGSMA4752 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 33V
Produkt ist nicht verfügbar
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SRAS2020 MNG SRAS2020%20SERIES_L15.pdf
SRAS2020 MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 20A TO263AB
Produkt ist nicht verfügbar
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SRAS2020HMNG SRAS2020%20SERIES_L15.pdf
SRAS2020HMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 20A TO263AB
Produkt ist nicht verfügbar
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TSM3911DCX6 RFG
TSM3911DCX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 2.2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.39 EUR
6000+0.37 EUR
9000+0.34 EUR
Mindestbestellmenge: 3000
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TSM3911DCX6 RFG
TSM3911DCX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 2.2A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 47404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
20+0.90 EUR
100+0.62 EUR
500+0.52 EUR
1000+0.44 EUR
Mindestbestellmenge: 18
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LL4007G L0G LL4001G%20SERIES_F2004.pdf
LL4007G L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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BZT55B3V9 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B3V9 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW MINI MELF
Produkt ist nicht verfügbar
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TS13005CK B0G TS13005CK_VerD1609.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 425mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
Produkt ist nicht verfügbar
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1PGSMA200Z R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA200Z R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Produkt ist nicht verfügbar
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1PGSMA200Z R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA200Z R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
31+0.58 EUR
100+0.41 EUR
Mindestbestellmenge: 26
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1PGSMA4763 R3G 1PGSMA%20SERIES_A1707.pdf
1PGSMA4763 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
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1PGSMA4763 R3G 1PGSMA%20SERIES_A1707.pdf
1PGSMA4763 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
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MBRF10H200CT C0G MBRF1035CT%20SERIES_L13.pdf
MBRF10H200CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Produkt ist nicht verfügbar
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S4D R7G S4A%20SERIES_J1903.pdf
S4D R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
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S4D R7G S4A%20SERIES_J1903.pdf
S4D R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
auf Bestellung 3343 Stücke:
Lieferzeit 10-14 Tag (e)
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SMCJ28CA V7G SMCJ%20SERIES_S2104.pdf
SMCJ28CA V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMCJ28CA R7G SMCJ SERIES_R2004.pdf
SMCJ28CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
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SMCJ28CA R7G SMCJ SERIES_R2004.pdf
SMCJ28CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
14+1.32 EUR
100+1.02 EUR
Mindestbestellmenge: 12
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SMCJ28CA V6G SMCJ SERIES_R2004.pdf
SMCJ28CA V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
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SMCJ28CAHR7G SMCJ SERIES_R2004.pdf
SMCJ28CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
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YBS3004G YBS3004G SERIES_D2103.pdf
YBS3004G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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YBS3004G YBS3004G SERIES_D2103.pdf
YBS3004G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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ES2HA R3G ES2AA%20SERIES_M2102.pdf
ES2HA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 500V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
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ES2HA R3G ES2AA%20SERIES_M2102.pdf
ES2HA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 500V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
16+1.17 EUR
Mindestbestellmenge: 10
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SR16100 C0G SR1620%20SERIES_I13.pdf
SR16100 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Produkt ist nicht verfügbar
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SR16100HC0G SR1620%20SERIES_I13.pdf
SR16100HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Produkt ist nicht verfügbar
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SR16100PT C0G SR1620PT%20SERIES_H15.pdf
SR16100PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO247
Produkt ist nicht verfügbar
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SR16100PTHC0G SR1620PT%20SERIES_H15.pdf
SR16100PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO247
Produkt ist nicht verfügbar
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SK26A M2G SK22A%20SERIES_Q2102.pdf
SK26A M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A DO214AC
Produkt ist nicht verfügbar
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1KSMB33A M4G 1KSMB SERIES_A2102.pdf
1KSMB33A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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BZW06-13 A0G BZW06%20SERIES_J1602.pdf
BZW06-13 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 27.2V DO204AC
Produkt ist nicht verfügbar
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SMA6J22AHR3G SMA6J%20SERIES_E2102.pdf
SMA6J22AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 34.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 34.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA6J22AHR3G SMA6J%20SERIES_E2102.pdf
SMA6J22AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 34.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 34.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
21+0.87 EUR
Mindestbestellmenge: 18
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SMBJ30CAHR5G SMBJ%20SERIES_R2104.pdf
SMBJ30CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Produkt ist nicht verfügbar
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SMBJ33CA M4G SMBJ%20SERIES_R2104.pdf
SMBJ33CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMBJ33CAHM4G SMBJ%20SERIES_R2104.pdf
SMBJ33CAHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Produkt ist nicht verfügbar
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KBP202G C2 KBP201G-KBP207G%20_E13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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KBP202G C2G KBP201G-KBP207G%20_E13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1SMB5927 M4G 1SMB5926%20SERIES_K1701.pdf
1SMB5927 M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
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1SMB5927 R5G 1SMB5926%20SERIES_K1701.pdf
1SMB5927 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
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1SMB5927HM4G 1SMB5926%20SERIES_K1701.pdf
1SMB5927HM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
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1SMB5927HR5G 1SMB5926%20SERIES_K1701.pdf
1SMB5927HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
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TSM3404CX RFG
TSM3404CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Produkt ist nicht verfügbar
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TSM3404CX RFG
TSM3404CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Produkt ist nicht verfügbar
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BZD17C13P RQG BZD17C%20SERIES_K15.pdf
BZD17C13P RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 800MW SUB SMA
Produkt ist nicht verfügbar
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BZD17C13P R3G BZD17C%20SERIES_K15.pdf
BZD17C13P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 800MW SUB SMA
Produkt ist nicht verfügbar
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BZD27C13PHRVG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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BZD27C13P R3G BZD27C%20SERIES_AB2103.pdf
BZD27C13P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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BZD27C13P RUG BZD27C%20SERIES_AB2103.pdf
BZD27C13P RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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BZD27C13PHMTG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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BZD27C13PHRUG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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S5KBHR5G S5GB%20SERIES_C1701.pdf
S5KBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AA
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
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