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S5D M6G S5D M6G Taiwan Semiconductor Corporation S5A%20SERIES_F2102.pdf Description: DIODE GEN PURP 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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YBS3005G YBS3005G Taiwan Semiconductor Corporation YBS3004G SERIES_D2103.pdf Description: BRIDGE RECT 1PHASE 600V 3A YBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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YBS3005G YBS3005G Taiwan Semiconductor Corporation YBS3004G SERIES_D2103.pdf Description: BRIDGE RECT 1PHASE 600V 3A YBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SMAJ20CHR3G SMAJ20CHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ20CHR3G SMAJ20CHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ20HR3G SMAJ20HR3G Taiwan Semiconductor Corporation Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ20HR3G SMAJ20HR3G Taiwan Semiconductor Corporation Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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1SMB5936 M4G 1SMB5936 M4G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 30V 3W DO214AA
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1SMB5936 R5G 1SMB5936 R5G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 30V 3W DO214AA
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1SMB5936HM4G 1SMB5936HM4G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 30V 3W DO214AA
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1SMB5936HR5G 1SMB5936HR5G Taiwan Semiconductor Corporation Description: DIODE ZENER 30V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 22.8 V
Qualification: AEC-Q101
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BZX79C2V7 A0G BZX79C2V7 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_F1804.pdf Description: DIODE ZENER 2.7V 500MW DO35
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ESH1C R3G ESH1C R3G Taiwan Semiconductor Corporation ESH1B%20SERIES_E15.pdf Description: DIODE GEN PURP 150V 1A DO214AC
auf Bestellung 5400 Stücke:
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ESH1C R3G ESH1C R3G Taiwan Semiconductor Corporation ESH1B%20SERIES_E15.pdf Description: DIODE GEN PURP 150V 1A DO214AC
auf Bestellung 7038 Stücke:
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MBRF1645HC0G MBRF1645HC0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 45V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
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1.5KE220AHA0G 1.5KE220AHA0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 185VWM 328VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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1.5KE220A B0G 1.5KE220A B0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 185VWM 328VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1.5KE220AHB0G 1.5KE220AHB0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 185VWM 328VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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S4J V7G S4J V7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
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S4J V7G S4J V7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
auf Bestellung 230 Stücke:
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S4J M6G S4J M6G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
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S4J V6G S4J V6G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
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RS2KAL M3G RS2KAL M3G Taiwan Semiconductor Corporation Description: 500NS, 2A, 800V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
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RS2KAL M3G RS2KAL M3G Taiwan Semiconductor Corporation Description: 500NS, 2A, 800V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
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RS2KFS M3G RS2KFS M3G Taiwan Semiconductor Corporation Description: 500NS, 2A, 800V, FAST RECOVERY R
auf Bestellung 17500 Stücke:
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RS2KFS M3G RS2KFS M3G Taiwan Semiconductor Corporation Description: 500NS, 2A, 800V, FAST RECOVERY R
auf Bestellung 17500 Stücke:
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HS2J R5G HS2J R5G Taiwan Semiconductor Corporation HS2A%20SERIES_K1701.pdf Description: DIODE GEN PURP 600V 2A DO214AA
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HS2J R5G HS2J R5G Taiwan Semiconductor Corporation HS2A%20SERIES_K1701.pdf Description: DIODE GEN PURP 600V 2A DO214AA
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UGF8J C0G UGF8J C0G Taiwan Semiconductor Corporation UGF8J_F1511.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
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UGF8JHC0G UGF8JHC0G Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
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UGF8JD C0G UGF8JD C0G Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
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UGF8JDHC0G UGF8JDHC0G Taiwan Semiconductor Corporation UGF8JD_C1512.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
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BZW06-31 A0G BZW06-31 A0G Taiwan Semiconductor Corporation BZW06%20SERIES_J1602.pdf Description: TVS DIODE 30.8VWM 64.3VC DO204AC
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1KSMB16A M4G 1KSMB16A M4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 13.6V 22.5V DO214AA
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BZT55C3V3 L1G BZT55C3V3 L1G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
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BZT55C3V3 L0G BZT55C3V3 L0G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
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BZT55C13 L1G BZT55C13 L1G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 13V 500MW MINI MELF
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BZT55C13 L0G BZT55C13 L0G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 13V 500MW MINI MELF
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UR4KB80-B C2G UR4KB80-B C2G Taiwan Semiconductor Corporation UR4KB60-B%20SERIES_C1709.pdf Description: BRIDGE RECT 1PHASE 800V 4A D3K
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P4SMA43A R3G P4SMA43A R3G Taiwan Semiconductor Corporation P4SMA%20SERIES_Q1705.pdf Description: TVS DIODE 36.8V 59.3V DO214AC
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P4SMA43A R3G P4SMA43A R3G Taiwan Semiconductor Corporation P4SMA%20SERIES_Q1705.pdf Description: TVS DIODE 36.8V 59.3V DO214AC
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TSF40H200C C0G TSF40H200C C0G Taiwan Semiconductor Corporation TSF40H100C%20SERIES_B14.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 1655 Stücke:
Lieferzeit 10-14 Tag (e)
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SK810CHM6G SK810CHM6G Taiwan Semiconductor Corporation SK82C%20SERIES_L2102.pdf Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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SK810C R7G SK810C R7G Taiwan Semiconductor Corporation SK82C%20SERIES_L2102.pdf Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SK810C R7G SK810C R7G Taiwan Semiconductor Corporation SK82C%20SERIES_L2102.pdf Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SK810C V6G SK810C V6G Taiwan Semiconductor Corporation SK82C%20SERIES_J1708.pdf Description: DIODE SCHOTTKY 8A 100V DO-214AB
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SK810CHR7G SK810CHR7G Taiwan Semiconductor Corporation SK82C%20SERIES_L2102.pdf Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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SK810C V7G SK810C V7G Taiwan Semiconductor Corporation SK82C%20SERIES_L2102.pdf Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SK810C V7G SK810C V7G Taiwan Semiconductor Corporation SK82C%20SERIES_L2102.pdf Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SK810C M6G SK810C M6G Taiwan Semiconductor Corporation SK82C%20SERIES_L2102.pdf Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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S8MC V7G S8MC V7G Taiwan Semiconductor Corporation S8GC%20SERIES_E1903.pdf Description: DIODE GEN PURP 1KV 8A DO214AB
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S8MC V7G S8MC V7G Taiwan Semiconductor Corporation S8GC%20SERIES_E1903.pdf Description: DIODE GEN PURP 1KV 8A DO214AB
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S8MC V6G S8MC V6G Taiwan Semiconductor Corporation S8GC%20SERIES_E1903.pdf Description: DIODE GEN PURP 8A DO214AB
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S8MC R7G S8MC R7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S8MC R7G S8MC R7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S8MCHR7G S8MCHR7G Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S8MC M6G S8MC M6G Taiwan Semiconductor Corporation S8GC%20SERIES_E1903.pdf Description: DIODE GEN PURP 8A DO214AB
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S8MCHM6G S8MCHM6G Taiwan Semiconductor Corporation S8GC%20SERIES_E1903.pdf Description: DIODE GEN PURP 8A DO214AB
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TS2938CS50 RLG TS2938CS50 RLG Taiwan Semiconductor Corporation TS2938_G15.pdf Description: IC REG LINEAR 5V 500MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 50 mA
auf Bestellung 7500 Stücke:
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2500+0.73 EUR
5000+0.69 EUR
Mindestbestellmenge: 2500
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TS2938CS50 RLG TS2938CS50 RLG Taiwan Semiconductor Corporation TS2938_G15.pdf Description: IC REG LINEAR 5V 500MA 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 50 mA
auf Bestellung 16006 Stücke:
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11+1.72 EUR
12+1.53 EUR
25+1.45 EUR
100+1.19 EUR
250+1.12 EUR
500+0.99 EUR
1000+0.78 EUR
Mindestbestellmenge: 11
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S5D M6G S5A%20SERIES_F2102.pdf
S5D M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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YBS3005G YBS3004G SERIES_D2103.pdf
YBS3005G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 3A YBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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YBS3005G YBS3004G SERIES_D2103.pdf
YBS3005G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 3A YBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SMAJ20CHR3G
SMAJ20CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ20CHR3G
SMAJ20CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ20HR3G
SMAJ20HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ20HR3G
SMAJ20HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 35.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1SMB5936 M4G 1SMB5926%20SERIES_K1701.pdf
1SMB5936 M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 3W DO214AA
Produkt ist nicht verfügbar
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1SMB5936 R5G 1SMB5926%20SERIES_K1701.pdf
1SMB5936 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 3W DO214AA
Produkt ist nicht verfügbar
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1SMB5936HM4G 1SMB5926%20SERIES_K1701.pdf
1SMB5936HM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 3W DO214AA
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1SMB5936HR5G
1SMB5936HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 22.8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX79C2V7 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C2V7 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Produkt ist nicht verfügbar
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ESH1C R3G ESH1B%20SERIES_E15.pdf
ESH1C R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
auf Bestellung 5400 Stücke:
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ESH1C R3G ESH1B%20SERIES_E15.pdf
ESH1C R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
auf Bestellung 7038 Stücke:
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MBRF1645HC0G MBRF1635%20SERIES_K2105.pdf
MBRF1645HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE220AHA0G 1.5KE%20SERIES_O2104.pdf
1.5KE220AHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE220A B0G 1.5KE%20SERIES_O2104.pdf
1.5KE220A B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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1.5KE220AHB0G 1.5KE%20SERIES_O2104.pdf
1.5KE220AHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S4J V7G S4A%20SERIES_J1903.pdf
S4J V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Produkt ist nicht verfügbar
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S4J V7G S4A%20SERIES_J1903.pdf
S4J V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
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S4J M6G S4A%20SERIES_J1903.pdf
S4J M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Produkt ist nicht verfügbar
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S4J V6G S4A%20SERIES_J1903.pdf
S4J V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Produkt ist nicht verfügbar
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RS2KAL M3G
RS2KAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 2A, 800V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
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RS2KAL M3G
RS2KAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 2A, 800V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
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RS2KFS M3G
RS2KFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 2A, 800V, FAST RECOVERY R
auf Bestellung 17500 Stücke:
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RS2KFS M3G
RS2KFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 2A, 800V, FAST RECOVERY R
auf Bestellung 17500 Stücke:
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HS2J R5G HS2A%20SERIES_K1701.pdf
HS2J R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
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HS2J R5G HS2A%20SERIES_K1701.pdf
HS2J R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
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UGF8J C0G UGF8J_F1511.pdf
UGF8J C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Produkt ist nicht verfügbar
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UGF8JHC0G
UGF8JHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UGF8JD C0G
UGF8JD C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Produkt ist nicht verfügbar
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UGF8JDHC0G UGF8JD_C1512.pdf
UGF8JDHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Produkt ist nicht verfügbar
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BZW06-31 A0G BZW06%20SERIES_J1602.pdf
BZW06-31 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Produkt ist nicht verfügbar
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1KSMB16A M4G 1KSMB SERIES_H1902.pdf
1KSMB16A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO214AA
Produkt ist nicht verfügbar
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BZT55C3V3 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C3V3 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
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BZT55C3V3 L0G BZT55C2V4%20SERIES_G1804.pdf
BZT55C3V3 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
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BZT55C13 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C13 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW MINI MELF
Produkt ist nicht verfügbar
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BZT55C13 L0G BZT55C2V4%20SERIES_G1804.pdf
BZT55C13 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW MINI MELF
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UR4KB80-B C2G UR4KB60-B%20SERIES_C1709.pdf
UR4KB80-B C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A D3K
Produkt ist nicht verfügbar
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P4SMA43A R3G P4SMA%20SERIES_Q1705.pdf
P4SMA43A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AC
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P4SMA43A R3G P4SMA%20SERIES_Q1705.pdf
P4SMA43A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AC
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TSF40H200C C0G TSF40H100C%20SERIES_B14.pdf
TSF40H200C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 1655 Stücke:
Lieferzeit 10-14 Tag (e)
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SK810CHM6G SK82C%20SERIES_L2102.pdf
SK810CHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK810C R7G SK82C%20SERIES_L2102.pdf
SK810C R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SK810C R7G SK82C%20SERIES_L2102.pdf
SK810C R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SK810C V6G SK82C%20SERIES_J1708.pdf
SK810C V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 8A 100V DO-214AB
Produkt ist nicht verfügbar
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SK810CHR7G SK82C%20SERIES_L2102.pdf
SK810CHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK810C V7G SK82C%20SERIES_L2102.pdf
SK810C V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SK810C V7G SK82C%20SERIES_L2102.pdf
SK810C V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SK810C M6G SK82C%20SERIES_L2102.pdf
SK810C M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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S8MC V7G S8GC%20SERIES_E1903.pdf
S8MC V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A DO214AB
Produkt ist nicht verfügbar
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S8MC V7G S8GC%20SERIES_E1903.pdf
S8MC V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A DO214AB
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
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S8MC V6G S8GC%20SERIES_E1903.pdf
S8MC V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A DO214AB
Produkt ist nicht verfügbar
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S8MC R7G S8GC%20SERIES_G2210.pdf
S8MC R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S8MC R7G S8GC%20SERIES_G2210.pdf
S8MC R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S8MCHR7G S8GCH%20SERIES_B2210.pdf
S8MCHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S8MC M6G S8GC%20SERIES_E1903.pdf
S8MC M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A DO214AB
Produkt ist nicht verfügbar
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S8MCHM6G S8GC%20SERIES_E1903.pdf
S8MCHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A DO214AB
Produkt ist nicht verfügbar
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TS2938CS50 RLG TS2938_G15.pdf
TS2938CS50 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 50 mA
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.73 EUR
5000+0.69 EUR
Mindestbestellmenge: 2500
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TS2938CS50 RLG TS2938_G15.pdf
TS2938CS50 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 50 mA
auf Bestellung 16006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
12+1.53 EUR
25+1.45 EUR
100+1.19 EUR
250+1.12 EUR
500+0.99 EUR
1000+0.78 EUR
Mindestbestellmenge: 11
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