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BZW04-40HR0G BZW04-40HR0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 40.2V 64.8V DO204AL
Produkt ist nicht verfügbar
BZW04-40 R1G BZW04-40 R1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
BZW04-40HR1G BZW04-40HR1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-40 A0G BZW04-40 A0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
BZW04-40HA0G BZW04-40HA0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-40HB0G BZW04-40HB0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RS1GAL M3G RS1GAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 400V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
RS1GAL M3G RS1GAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 400V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
ES1F R3G ES1F R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1F R3G ES1F R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL RVG ES1FL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL RVG ES1FL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1F M2G ES1F M2G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Produkt ist nicht verfügbar
ES1FHM2G ES1FHM2G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Produkt ist nicht verfügbar
ES1FL RQG ES1FL RQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FLHRQG ES1FLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FLHRVG ES1FLHRVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1FL RUG ES1FL RUG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FHR3G ES1FHR3G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Produkt ist nicht verfügbar
ES1FLHR3G ES1FLHR3G Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FL RHG ES1FL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FLHRHG ES1FLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1FL M2G ES1FL M2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL MHG ES1FL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FLHM2G ES1FLHM2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1FLHMHG ES1FLHMHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1FL MQG ES1FL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL MTG ES1FL MTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL RTG ES1FL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FLHMQG ES1FLHMQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FLHMTG ES1FLHMTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FLHRTG ES1FLHRTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
1N5255B A0G 1N5255B A0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_G1804.pdf Description: DIODE ZENER 28V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
SMAJ14CHR3G SMAJ14CHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ14CHR3G SMAJ14CHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ14HR3G SMAJ14HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMAJ14HR3G SMAJ14HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 3449 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
27+ 0.66 EUR
100+ 0.45 EUR
500+ 0.34 EUR
Mindestbestellmenge: 22
P6SMB39A M4G P6SMB39A M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
P6SMB39AHM4G P6SMB39AHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
P6SMB39AHR5G P6SMB39AHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
1KSMB39A M4G 1KSMB39A M4G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1KSMB39AHM4G 1KSMB39AHM4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 33.3V 53.9V DO214AA
Produkt ist nicht verfügbar
1KSMB39A R5G 1KSMB39A R5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 33.3V 53.9V DO214AA
Produkt ist nicht verfügbar
1KSMB39AHR5G 1KSMB39AHR5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 33.3V 53.9V DO214AA
Produkt ist nicht verfügbar
S2JA R3G S2JA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_J15.pdf Description: DIODE GEN PURP 600V 1.5A DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
P4KE16CA R1G P4KE16CA R1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
P4KE16CAHR1G P4KE16CAHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
P4KE16CA A0G P4KE16CA A0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 13.6VWM 22.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
P4KE16CAHA0G P4KE16CAHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
P4KE16CA B0G P4KE16CA B0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
P4KE16CAHB0G P4KE16CAHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
RSFJL RVG RSFJL RVG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJL RVG RSFJL RVG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
RSFJL R3G RSFJL R3G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJL M2G RSFJL M2G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJL RQG RSFJL RQG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJL RTG RSFJL RTG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJLHM2G RSFJLHM2G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJLHRQG RSFJLHRQG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJLHRTG RSFJLHRTG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
BZW04-40HR0G BZW04%20SERIES_I15.pdf
BZW04-40HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Produkt ist nicht verfügbar
BZW04-40 R1G BZW04%20SERIES_J2104.pdf
BZW04-40 R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
BZW04-40HR1G BZW04%20SERIES_J2104.pdf
BZW04-40HR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-40 A0G BZW04%20SERIES_J2104.pdf
BZW04-40 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
BZW04-40HA0G BZW04%20SERIES_J2104.pdf
BZW04-40HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-40HB0G BZW04%20SERIES_J2104.pdf
BZW04-40HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RS1GAL M3G
RS1GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
RS1GAL M3G
RS1GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
ES1F R3G ES1A%20SERIES_O2112.pdf
ES1F R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1F R3G ES1A%20SERIES_O2112.pdf
ES1F R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL RVG ES1AL%20SERIES_L2103.pdf
ES1FL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL RVG ES1AL%20SERIES_L2103.pdf
ES1FL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1F M2G ES1A%20SERIES_M15.pdf
ES1F M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Produkt ist nicht verfügbar
ES1FHM2G ES1A%20SERIES_M15.pdf
ES1FHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Produkt ist nicht verfügbar
ES1FL RQG ES1AL%20SERIES_L2103.pdf
ES1FL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FLHRQG ES1AL%20SERIES_K15.pdf
ES1FLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FLHRVG ES1AL%20SERIES_L2103.pdf
ES1FLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1FL RUG ES1AL%20SERIES_L2103.pdf
ES1FL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FHR3G ES1A%20SERIES_M15.pdf
ES1FHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Produkt ist nicht verfügbar
ES1FLHR3G ES1AL%20SERIES_K15.pdf
ES1FLHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FL RHG ES1AL%20SERIES_L2103.pdf
ES1FL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FLHRHG ES1AL%20SERIES_L2103.pdf
ES1FLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1FL M2G ES1AL%20SERIES_L2103.pdf
ES1FL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL MHG ES1AL%20SERIES_L2103.pdf
ES1FL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FLHM2G ES1AL%20SERIES_L2103.pdf
ES1FLHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1FLHMHG ES1AL%20SERIES_L2103.pdf
ES1FLHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1FL MQG ES1AL%20SERIES_L2103.pdf
ES1FL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL MTG ES1AL%20SERIES_L2103.pdf
ES1FL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
ES1FL RTG ES1AL%20SERIES_K15.pdf
ES1FL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FLHMQG ES1AL%20SERIES_K15.pdf
ES1FLHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FLHMTG ES1AL%20SERIES_K15.pdf
ES1FLHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
ES1FLHRTG ES1AL%20SERIES_K15.pdf
ES1FLHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
1N5255B A0G 1N5221B%20SERIES_G1804.pdf
1N5255B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 28V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
SMAJ14CHR3G SMAJ%20SERIES_U2102.pdf
SMAJ14CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ14CHR3G SMAJ%20SERIES_U2102.pdf
SMAJ14CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ14HR3G SMAJ%20SERIES_U2102.pdf
SMAJ14HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMAJ14HR3G SMAJ%20SERIES_U2102.pdf
SMAJ14HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 3449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
27+ 0.66 EUR
100+ 0.45 EUR
500+ 0.34 EUR
Mindestbestellmenge: 22
P6SMB39A M4G P6SMB%20SERIES_P2102.pdf
P6SMB39A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
P6SMB39AHM4G P6SMB%20SERIES_P2102.pdf
P6SMB39AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
P6SMB39AHR5G P6SMB%20SERIES_Q2209.pdf
P6SMB39AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
1KSMB39A M4G 1KSMB SERIES_A2102.pdf
1KSMB39A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1KSMB39AHM4G 1KSMB SERIES_H1902.pdf
1KSMB39AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
Produkt ist nicht verfügbar
1KSMB39A R5G 1KSMB SERIES_H1902.pdf
1KSMB39A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
Produkt ist nicht verfügbar
1KSMB39AHR5G 1KSMB SERIES_H1902.pdf
1KSMB39AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
Produkt ist nicht verfügbar
S2JA R3G S2AA%20SERIES_J15.pdf
S2JA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
P4KE16CA R1G P4KE%20SERIES_M1602.pdf
P4KE16CA R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
P4KE16CAHR1G P4KE%20SERIES_M1602.pdf
P4KE16CAHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
P4KE16CA A0G P4KE%20SERIES_N2104.pdf
P4KE16CA A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6VWM 22.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
P4KE16CAHA0G P4KE%20SERIES_M1602.pdf
P4KE16CAHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
P4KE16CA B0G P4KE%20SERIES_M1602.pdf
P4KE16CA B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
P4KE16CAHB0G P4KE%20SERIES_M1602.pdf
P4KE16CAHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Produkt ist nicht verfügbar
RSFJL RVG RSFAL%20SERIES_L15.pdf
RSFJL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJL RVG RSFAL%20SERIES_L15.pdf
RSFJL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
RSFJL R3G RSFAL%20SERIES_L15.pdf
RSFJL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJL M2G RSFAL%20SERIES_L15.pdf
RSFJL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJL RQG RSFAL%20SERIES_L15.pdf
RSFJL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJL RTG RSFAL%20SERIES_L15.pdf
RSFJL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJLHM2G RSFAL%20SERIES_L15.pdf
RSFJLHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJLHRQG RSFAL%20SERIES_L15.pdf
RSFJLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
RSFJLHRTG RSFAL%20SERIES_L15.pdf
RSFJLHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Produkt ist nicht verfügbar
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