Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25511) > Seite 165 nach 426
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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RS2DA R3G | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 200V 1.5A DO214AC |
auf Bestellung 1580 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S2DA M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS2DA M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S2DA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S2DA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS2DAHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS2DAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS2DAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
,-TO-263AB.jpg "SFS1603G MNG") |
SFS1603G MNG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SFS1603GHMNG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSF20U100C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB |
auf Bestellung 2895 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS1GL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 1V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS1GL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S1GL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS1GL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 800MA SUBSMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S1GL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMA Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 9pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GL RUG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S1GL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS1MFS MXG | Taiwan Semiconductor Corporation |
Description: DIODE, FAST, 1A, 1000V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSM038N03PQ33 RGG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 78A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM038N03PQ33 RGG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 78A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V |
auf Bestellung 10891 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2AAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2AAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2AA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2AA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2AAHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2AA M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2A R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2AHM4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2AHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA Qualification: AEC-Q101 Grade: Automotive Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SK35B M4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SK35BHM4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SK35B R5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SK35BHR5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SS13 R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2GAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 400V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2GAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 400V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2GFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 400V, SUPER FAST RECOV |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2GFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 400V, SUPER FAST RECOV |
auf Bestellung 6990 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SK315A R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SK315A R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AC |
auf Bestellung 956 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMCJ51A V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMCJ51A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 19A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMCJ51A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMCJ51AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51V 82.4V DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SA160CA B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 160VWM 259VC DO204AC Voltage - Reverse Standoff (Typ): 160V Current - Peak Pulse (10/1000µs): 2A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Bulk Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 259V Voltage - Breakdown (Min): 178V Bidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SA160CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 160V 259V DO204AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SA160CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 160V 259V DO204AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS19501CB10 RBG | Taiwan Semiconductor Corporation |
Description: IC LED DRIVER CTRLR PWM 10MSOP Grade: Automotive Voltage - Supply (Max): 38V Voltage - Supply (Min): 8V Dimming: Analog, PWM Supplier Device Package: 10-MSOP-EP Topology: SEPIC, Step-Down (Buck), Step-Up (Boost) Internal Switch(s): No Applications: Lighting Operating Temperature: -40°C ~ 125°C (TA) Type: DC DC Controller Frequency: 70kHz ~ 700kHz Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 0V ~ 18V Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS19501CB10 RBG | Taiwan Semiconductor Corporation |
Description: IC LED DRIVER CTRLR PWM 10MSOP Packaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad Voltage - Output: 0V ~ 18V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 70kHz ~ 700kHz Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Internal Switch(s): No Topology: SEPIC, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 10-MSOP-EP Dimming: Analog, PWM Voltage - Supply (Min): 8V Voltage - Supply (Max): 38V Grade: Automotive |
auf Bestellung 14966 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR7150HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 7.5A TO220AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBRF7150HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHTKY 150V 7.5A ITO220AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BZT52C7V5 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 500MW SOD123F Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 900 nA @ 5 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BZT52C7V5 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 500MW SOD123F Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 900 nA @ 5 V |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BZT52C75 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 500MW SOD123F Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 255 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52C75 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 500MW SOD123F Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 255 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V |
auf Bestellung 5675 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS2DA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
| S2DA M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS2DA M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S2DA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S2DA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS2DAHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS2DAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
| RS2DAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFS1603G MNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SFS1603GHMNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSF20U100C C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 2895 Stücke:
Lieferzeit 10-14 Tag (e)
| RS1GL RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1GL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1GL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S1GL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1GL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Description: DIODE GEN PURP 400V 800MA SUBSMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S1GL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1GL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1GL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Description: DIODE GP 400V 800MA SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S1GL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1GL RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S1GL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1MFS MXG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 1000V
Description: DIODE, FAST, 1A, 1000V
Produkt ist nicht verfügbar
Mindestbestellmenge: 28000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSM038N03PQ33 RGG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.51 EUR |
| 10000+ | 0.48 EUR |
| TSM038N03PQ33 RGG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
auf Bestellung 10891 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.15 EUR |
| 16+ | 1.34 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.62 EUR |
| 2000+ | 0.57 EUR |
| ES2AAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2AAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2AA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2AA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Description: DIODE GEN PURP 50V 2A DO214AC
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2AAHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2AA M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2A R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2AHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 50V 2A DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2AHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Description: DIODE GEN PURP 50V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SK35B M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SK35BHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 3A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SK35B R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SK35BHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 3A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS13 R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ES2GAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
Description: 35NS, 2A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| ES2GAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
Description: 35NS, 2A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| ES2GFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
Description: 35NS, 2A, 400V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| ES2GFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
Description: 35NS, 2A, 400V, SUPER FAST RECOV
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)
| SK315A R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AC
Description: DIODE SCHOTTKY 150V 3A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SK315A R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AC
Description: DIODE SCHOTTKY 150V 3A DO214AC
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
| SMCJ51A V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Description: TVS DIODE 51VWM 82.4VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ51A R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ51A V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Description: TVS DIODE 51VWM 82.4VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ51AHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51V 82.4V DO214AB
Description: TVS DIODE 51V 82.4V DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SA160CA B0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO204AC
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Description: TVS DIODE 160VWM 259VC DO204AC
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SA160CA A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SA160CAHR0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TS19501CB10 RBG |
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Grade: Automotive
Voltage - Supply (Max): 38V
Voltage - Supply (Min): 8V
Dimming: Analog, PWM
Supplier Device Package: 10-MSOP-EP
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Controller
Frequency: 70kHz ~ 700kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0V ~ 18V
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER CTRLR PWM 10MSOP
Grade: Automotive
Voltage - Supply (Max): 38V
Voltage - Supply (Min): 8V
Dimming: Analog, PWM
Supplier Device Package: 10-MSOP-EP
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Controller
Frequency: 70kHz ~ 700kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0V ~ 18V
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS19501CB10 RBG |
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 0V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 70kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 10-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 38V
Grade: Automotive
Description: IC LED DRIVER CTRLR PWM 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 0V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 70kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 10-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 38V
Grade: Automotive
auf Bestellung 14966 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.83 EUR |
| 10+ | 6.15 EUR |
| 25+ | 5.81 EUR |
| 100+ | 5.03 EUR |
| 250+ | 4.77 EUR |
| 500+ | 4.28 EUR |
| 1000+ | 3.62 EUR |
| 2500+ | 3.44 EUR |
| MBR7150HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 7.5A TO220AC
Description: DIODE SCHOTTKY 150V 7.5A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRF7150HC0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHTKY 150V 7.5A ITO220AC
Description: DIODE SCHTKY 150V 7.5A ITO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52C7V5 RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Description: DIODE ZENER 7.5V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZT52C7V5 RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Description: DIODE ZENER 7.5V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| BZT52C75 RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
Description: DIODE ZENER 75V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.069 EUR |
| BZT52C75 RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
Description: DIODE ZENER 75V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
auf Bestellung 5675 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 75+ | 0.29 EUR |
| 153+ | 0.14 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.08 EUR |