Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25579) > Seite 160 nach 427
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HS1GFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 400V, HIGH EFFICIENT R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 400V, HIGH EFFICIENT R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 400V, HIGH EFFICIENT R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 400V, HIGH EFFICIENT R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSUP5M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 5A SMPC4.6U Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 346pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSUP5M45SH S1G | Taiwan Semiconductor Corporation |
 Description: DIODE SCHOTTKY 45V 5A SMPC4.6UQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 150 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 589pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSUP5M45SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U Grade: Automotive Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 150 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 589pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSUP10M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 250 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 658pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSUP10M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 250 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 658pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSUP15M45SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 15A SMPC4.6U Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 350 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 1803pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSUP15M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 450 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 1046pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSUP15M60SH S1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 450 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 1046pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 547 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1GL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GL R3G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GL MQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GL MTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HS1GL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSF40U100C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB |
auf Bestellung 565 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS1MAL M3G | Taiwan Semiconductor Corporation | Description: 500NS, 1A, 1000V, FAST RECOVERY |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS1MAL M3G | Taiwan Semiconductor Corporation | Description: 500NS, 1A, 1000V, FAST RECOVERY |
auf Bestellung 3816 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1.5SMC20A V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1.5SMC20A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1.5SMC20A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1.5SMC20AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1.5SMC20A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSH282CT B0G | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH TO92S |
auf Bestellung 4687 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSH181CT B0G | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH TO92S Part Status: Active Test Condition: -40°C ~ 125°C Supplier Device Package: TO-92 Current - Supply (Max): 4mA Current - Output (Max): 25mA Sensing Range: ±9mT Trip, ±0.5mT Release Technology: Hall Effect Voltage - Supply: 3.5V ~ 20V Operating Temperature: -40°C ~ 125°C Function: Special Purpose Mounting Type: Through Hole Polarization: North Pole, South Pole Output Type: Open Collector Package / Case: TO-226-3, TO-92-3 (TO-226AA) Features: Temperature Compensated Packaging: Bulk |
auf Bestellung 9471 Stücke: Lieferzeit 10-14 Tag (e) |
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TSH251CT B0G | Taiwan Semiconductor Corporation |
Description: HALL EFFECT SWITCH, OMNI-POLAR, |
auf Bestellung 9944 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSH188CT B0G | Taiwan Semiconductor Corporation |
Description: HALL EFFECT SWITCH, LATCH, 2.5 - |
auf Bestellung 9948 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TSH481CT B0G | Taiwan Semiconductor Corporation |
Description: HALL EFFECT SENSOR, LINEAR, 3 - |
auf Bestellung 9747 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AZ23C27 RFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER ARRAY 27V SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AZ23C30 RFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER ARRAY 30V SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BZX585B4V3 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 200MW SOD523F Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V Power - Max: 200 mW Supplier Device Package: SOD-523F Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 4.3 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMAJ14AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC Qualification: AEC-Q101 Grade: Automotive Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 23.2V Voltage - Breakdown (Min): 15.6V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 14V Current - Peak Pulse (10/1000µs): 17.2A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMAJ14AHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PGSMAJ14AHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 23.2V Voltage - Breakdown (Min): 15.6V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 14V Current - Peak Pulse (10/1000µs): 17.2A Applications: Automotive Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMAJ14A M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PGSMAJ14A M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC Qualification: AEC-Q101 Grade: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 23.2V Voltage - Breakdown (Min): 15.6V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 14V Current - Peak Pulse (10/1000µs): 17.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PGSMAJ14AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC Qualification: AEC-Q101 Grade: Automotive Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 23.2V Voltage - Breakdown (Min): 15.6V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 14V Current - Peak Pulse (10/1000µs): 17.2A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMAJ14A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 23.2V Voltage - Breakdown (Min): 15.6V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 14V Current - Peak Pulse (10/1000µs): 17.2A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PGSMAJ14A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AC Qualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 23.2V Voltage - Breakdown (Min): 15.6V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 14V Current - Peak Pulse (10/1000µs): 17.2A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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P4KE39A R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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P4KE39A A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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P4KE39AHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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P4KE39A R1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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P4KE39AHR1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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P4KE39AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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P4KE39A B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO204AL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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P4KE39AHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1.5KE7.5CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.4VWM 11.3VC DO201 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1.5KE7.5CAHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.4VWM 11.3VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS10P05G D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P |
auf Bestellung 1119 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS10P05G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Average Rectified (Io): 10 A Voltage - Peak Reverse (Max): 600 V Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS10P05GHC2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Average Rectified (Io): 10 A Voltage - Peak Reverse (Max): 600 V Grade: Automotive Supplier Device Package: TS-6P Technology: Standard |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS10P05GHD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Average Rectified (Io): 10 A Voltage - Peak Reverse (Max): 600 V Grade: Automotive Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR3035CT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 30A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR3035CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 30A TO220AB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 35 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HS1GFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1GFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1GAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1GAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| TSUP5M60SH S1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A SMPC4.6U
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 346pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 5A SMPC4.6U
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 346pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSUP5M45SH S1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSUP5M45SH S1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Grade: Automotive
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Grade: Automotive
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSUP10M60SH S1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSUP10M60SH S1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSUP15M45SH S1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSUP15M60SH S1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSUP15M60SH S1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.02 EUR |
| 10+ | 3.43 EUR |
| 100+ | 2.46 EUR |
| 500+ | 2.03 EUR |
| HS1GL RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1GL R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1GL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE GEN PURP 400V 1A SUB SMA
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1GL M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1GL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1GL MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1GL MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1GL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSF40U100C C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
| RS1MAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
Description: 500NS, 1A, 1000V, FAST RECOVERY
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| RS1MAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
Description: 500NS, 1A, 1000V, FAST RECOVERY
auf Bestellung 3816 Stücke:
Lieferzeit 10-14 Tag (e)
| 1.5SMC20A V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1.5SMC20A V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1.5SMC20A R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1.5SMC20AHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1.5SMC20A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSH282CT B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
Description: MAGNETIC SWITCH TO92S
auf Bestellung 4687 Stücke:
Lieferzeit 10-14 Tag (e)
| TSH181CT B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: TO-92
Current - Supply (Max): 4mA
Current - Output (Max): 25mA
Sensing Range: ±9mT Trip, ±0.5mT Release
Technology: Hall Effect
Voltage - Supply: 3.5V ~ 20V
Operating Temperature: -40°C ~ 125°C
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Collector
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Features: Temperature Compensated
Packaging: Bulk
Description: MAGNETIC SWITCH TO92S
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: TO-92
Current - Supply (Max): 4mA
Current - Output (Max): 25mA
Sensing Range: ±9mT Trip, ±0.5mT Release
Technology: Hall Effect
Voltage - Supply: 3.5V ~ 20V
Operating Temperature: -40°C ~ 125°C
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Collector
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Features: Temperature Compensated
Packaging: Bulk
auf Bestellung 9471 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.18 EUR |
| 10+ | 5.05 EUR |
| 25+ | 4.09 EUR |
| 50+ | 3.81 EUR |
| 100+ | 3.62 EUR |
| 500+ | 3.05 EUR |
| 1000+ | 2.86 EUR |
| 5000+ | 2.67 EUR |
| TSH251CT B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, OMNI-POLAR,
Description: HALL EFFECT SWITCH, OMNI-POLAR,
auf Bestellung 9944 Stücke:
Lieferzeit 10-14 Tag (e)
| TSH188CT B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, LATCH, 2.5 -
Description: HALL EFFECT SWITCH, LATCH, 2.5 -
auf Bestellung 9948 Stücke:
Lieferzeit 10-14 Tag (e)
| TSH481CT B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: HALL EFFECT SENSOR, LINEAR, 3 -
Description: HALL EFFECT SENSOR, LINEAR, 3 -
auf Bestellung 9747 Stücke:
Lieferzeit 10-14 Tag (e)
| AZ23C27 RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 27V SOT23
Description: DIODE ZENER ARRAY 27V SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AZ23C30 RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 30V SOT23
Description: DIODE ZENER ARRAY 30V SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX585B4V3 RSG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD523F
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 4.3V 200MW SOD523F
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ14AHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ14AHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Description: TVS DIODE 14VWM 23.2VC DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ14AHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Applications: Automotive
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 14VWM 23.2VC DO214AC
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Applications: Automotive
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ14A M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Description: TVS DIODE 14VWM 23.2VC DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ14A M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ14AHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ14A R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Description: TVS DIODE 14VWM 23.2VC DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ14A R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4KE39A R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4KE39A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4KE39AHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4KE39A R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4KE39AHR1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4KE39AHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4KE39A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AL
Description: TVS DIODE 33.3VWM 53.9VC DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4KE39AHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE7.5CAHA0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1.5KE7.5CAHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| TS10P05G D2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Description: BRIDGE RECT 1P 600V 10A TS-6P
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
| TS10P05G C2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Description: BRIDGE RECT 1P 600V 10A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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| TS10P05GHC2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Description: BRIDGE RECT 1P 600V 10A TS-6P
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
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| TS10P05GHD2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Description: BRIDGE RECT 1P 600V 10A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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| MBR3035CT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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| MBR3035CTHC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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