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TSUP15M60SH S1G TSUP15M60SH S1G Taiwan Semiconductor Corporation TSUP15M60SH_B2103.pdf Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 547 Stücke:
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5+4.22 EUR
10+2.88 EUR
100+2.07 EUR
500+1.71 EUR
Mindestbestellmenge: 5
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HS1GL RQG HS1GL RQG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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HS1GL R3G HS1GL R3G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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HS1GL RHG HS1GL RHG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
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HS1GL M2G HS1GL M2G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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HS1GL MHG HS1GL MHG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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HS1GL MQG HS1GL MQG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
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HS1GL MTG HS1GL MTG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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HS1GL RTG HS1GL RTG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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TSF40U100C C0G TSF40U100C C0G Taiwan Semiconductor Corporation TSF40U100C_B2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 565 Stücke:
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RS1MAL M3G RS1MAL M3G Taiwan Semiconductor Corporation Description: 500NS, 1A, 1000V, FAST RECOVERY
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RS1MAL M3G RS1MAL M3G Taiwan Semiconductor Corporation Description: 500NS, 1A, 1000V, FAST RECOVERY
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1.5SMC20A V6G 1.5SMC20A V6G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
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1.5SMC20A V7G 1.5SMC20A V7G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
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1.5SMC20A R7G 1.5SMC20A R7G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
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1.5SMC20AHR7G 1.5SMC20AHR7G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
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1.5SMC20A M6G 1.5SMC20A M6G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
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TSH282CT B0G TSH282CT B0G Taiwan Semiconductor Corporation TSH282_B13.pdf Description: MAGNETIC SWITCH TO92S
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TSH181CT B0G TSH181CT B0G Taiwan Semiconductor Corporation TSH181_B13.pdf Description: MAGNETIC SWITCH TO92S
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: TO-92
Current - Supply (Max): 4mA
Current - Output (Max): 25mA
Sensing Range: ±9mT Trip, ±0.5mT Release
Technology: Hall Effect
Voltage - Supply: 3.5V ~ 20V
Operating Temperature: -40°C ~ 125°C
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Collector
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Features: Temperature Compensated
Packaging: Bulk
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4+5.19 EUR
10+4.24 EUR
25+3.44 EUR
50+3.2 EUR
100+3.04 EUR
500+2.56 EUR
1000+2.4 EUR
5000+2.24 EUR
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TSH251CT B0G TSH251CT B0G Taiwan Semiconductor Corporation TSH251_B14.pdf Description: HALL EFFECT SWITCH, OMNI-POLAR,
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TSH188CT B0G TSH188CT B0G Taiwan Semiconductor Corporation TSH188_C13.pdf Description: HALL EFFECT SWITCH, LATCH, 2.5 -
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TSH481CT B0G TSH481CT B0G Taiwan Semiconductor Corporation TSH481_A14.pdf Description: HALL EFFECT SENSOR, LINEAR, 3 -
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BAT54 RFG BAT54 RFG Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.041 EUR
6000+0.038 EUR
9000+0.033 EUR
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AZ23C27 RFG AZ23C27 RFG Taiwan Semiconductor Corporation AZ23C2V7%20SERIES_C14.pdf Description: DIODE ZENER ARRAY 27V SOT23
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AZ23C30 RFG AZ23C30 RFG Taiwan Semiconductor Corporation AZ23C2V7%20SERIES_C14.pdf Description: DIODE ZENER ARRAY 30V SOT23
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BZX585B4V3 RSG BZX585B4V3 RSG Taiwan Semiconductor Corporation BZX585B2V4 SERIES_C1607.pdf Description: DIODE ZENER 4.3V 200MW SOD523F
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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SMAJ14AHR3G SMAJ14AHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SMAJ14AHM2G SMAJ14AHM2G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
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PGSMAJ14AHM2G PGSMAJ14AHM2G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Applications: Automotive
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SMAJ14A M2G SMAJ14A M2G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
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PGSMAJ14A M2G PGSMAJ14A M2G Taiwan Semiconductor Corporation PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
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PGSMAJ14AHR3G PGSMAJ14AHR3G Taiwan Semiconductor Corporation PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SMAJ14A R3G SMAJ14A R3G Taiwan Semiconductor Corporation Description: TVS DIODE 14VWM 23.2VC DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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PGSMAJ14A R3G PGSMAJ14A R3G Taiwan Semiconductor Corporation PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
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P4KE39A R0G P4KE39A R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39A A0G P4KE39A A0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39AHR0G P4KE39AHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39A R1G P4KE39A R1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39AHR1G P4KE39AHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39AHA0G P4KE39AHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39A B0G P4KE39A B0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AL
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P4KE39AHB0G P4KE39AHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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1.5KE7.5CAHA0G 1.5KE7.5CAHA0G Taiwan Semiconductor Corporation Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE7.5CAHB0G 1.5KE7.5CAHB0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TS10P05G D2G TS10P05G D2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_J15.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
auf Bestellung 1119 Stücke:
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TS10P05G C2G TS10P05G C2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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TS10P05GHC2G TS10P05GHC2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Produkt ist nicht verfügbar
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TS10P05GHD2G TS10P05GHD2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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MBR3035CT C0G MBR3035CT C0G Taiwan Semiconductor Corporation MBR3035CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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MBR3035CTHC0G MBR3035CTHC0G Taiwan Semiconductor Corporation MBR3035CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOTT 35V 30A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBR3035PT C0G MBR3035PT C0G Taiwan Semiconductor Corporation MBR3035PT%20SERIES_K2103.pdf Description: DIODE ARR SCHOTT 35V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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BZW04-26B R0G BZW04-26B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 25.6V 41.5V DO204AL
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BZW04-273B R0G BZW04-273B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 273V 438V DO204AL
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BZW04-28B R0G BZW04-28B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 28.2VWM 45.7VC DO204AL
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BZW04-299B R0G BZW04-299B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 299V 482V DO204AL
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BZW04-31B R0G BZW04-31B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 30.8V 49.9V DO204AL
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BZW04-33B R0G BZW04-33B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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BZW04-342B R0G BZW04-342B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 342V 548V DO204AL
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BZW04-40HR0G BZW04-40HR0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 40.2V 64.8V DO204AL
Produkt ist nicht verfügbar
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BZW04-40 R1G BZW04-40 R1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TSUP15M60SH S1G TSUP15M60SH_B2103.pdf
TSUP15M60SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
10+2.88 EUR
100+2.07 EUR
500+1.71 EUR
Mindestbestellmenge: 5
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HS1GL RQG HS1AL%20SERIES_C2103.pdf
HS1GL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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HS1GL R3G HS1AL%20SERIES_C2103.pdf
HS1GL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HS1GL RHG HS1AL%20SERIES_C2103.pdf
HS1GL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
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HS1GL M2G HS1AL%20SERIES_C2103.pdf
HS1GL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HS1GL MHG HS1AL%20SERIES_C2103.pdf
HS1GL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HS1GL MQG HS1AL%20SERIES_C2103.pdf
HS1GL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar
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HS1GL MTG HS1AL%20SERIES_C2103.pdf
HS1GL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HS1GL RTG HS1AL%20SERIES_C2103.pdf
HS1GL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TSF40U100C C0G TSF40U100C_B2105.pdf
TSF40U100C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 565 Stücke:
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RS1MAL M3G
RS1MAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
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RS1MAL M3G
RS1MAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
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1.5SMC20A V6G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
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1.5SMC20A V7G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
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1.5SMC20A R7G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
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1.5SMC20AHR7G 1.5SMC SERIES_Q2004.pdf
1.5SMC20AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
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1.5SMC20A M6G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
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TSH282CT B0G TSH282_B13.pdf
TSH282CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
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TSH181CT B0G TSH181_B13.pdf
TSH181CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: TO-92
Current - Supply (Max): 4mA
Current - Output (Max): 25mA
Sensing Range: ±9mT Trip, ±0.5mT Release
Technology: Hall Effect
Voltage - Supply: 3.5V ~ 20V
Operating Temperature: -40°C ~ 125°C
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Collector
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Features: Temperature Compensated
Packaging: Bulk
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4+5.19 EUR
10+4.24 EUR
25+3.44 EUR
50+3.2 EUR
100+3.04 EUR
500+2.56 EUR
1000+2.4 EUR
5000+2.24 EUR
Mindestbestellmenge: 4
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TSH251CT B0G TSH251_B14.pdf
TSH251CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, OMNI-POLAR,
auf Bestellung 9944 Stücke:
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TSH188CT B0G TSH188_C13.pdf
TSH188CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, LATCH, 2.5 -
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TSH481CT B0G TSH481_A14.pdf
TSH481CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: HALL EFFECT SENSOR, LINEAR, 3 -
auf Bestellung 9747 Stücke:
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BAT54 RFG BAT54 SERIES_G2007.pdf
BAT54 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.041 EUR
6000+0.038 EUR
9000+0.033 EUR
Mindestbestellmenge: 3000
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AZ23C27 RFG AZ23C2V7%20SERIES_C14.pdf
AZ23C27 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 27V SOT23
Produkt ist nicht verfügbar
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AZ23C30 RFG AZ23C2V7%20SERIES_C14.pdf
AZ23C30 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 30V SOT23
Produkt ist nicht verfügbar
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BZX585B4V3 RSG BZX585B2V4 SERIES_C1607.pdf
BZX585B4V3 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD523F
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ14AHR3G
SMAJ14AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ14AHM2G SMAJ%20SERIES_U2102.pdf
SMAJ14AHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Produkt ist nicht verfügbar
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PGSMAJ14AHM2G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ14AHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Applications: Automotive
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ14A M2G SMAJ%20SERIES_U2102.pdf
SMAJ14A M2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Produkt ist nicht verfügbar
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PGSMAJ14A M2G PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf
PGSMAJ14A M2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Produkt ist nicht verfügbar
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PGSMAJ14AHR3G PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf
PGSMAJ14AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ14A R3G
SMAJ14A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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PGSMAJ14A R3G PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf
PGSMAJ14A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Produkt ist nicht verfügbar
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P4KE39A R0G P4KE%20SERIES_M1602.pdf
P4KE39A R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
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P4KE39A A0G P4KE%20SERIES_M1602.pdf
P4KE39A A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
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P4KE39AHR0G P4KE%20SERIES_M1602.pdf
P4KE39AHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39A R1G P4KE%20SERIES_M1602.pdf
P4KE39A R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39AHR1G P4KE%20SERIES_M1602.pdf
P4KE39AHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
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P4KE39AHA0G P4KE%20SERIES_M1602.pdf
P4KE39AHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
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P4KE39A B0G P4KE%20SERIES_N2104.pdf
P4KE39A B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AL
Produkt ist nicht verfügbar
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P4KE39AHB0G P4KE%20SERIES_M1602.pdf
P4KE39AHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
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1.5KE7.5CAHA0G
1.5KE7.5CAHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE7.5CAHB0G 1.5KE%20SERIES_O2104.pdf
1.5KE7.5CAHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS10P05G D2G TS10P01G%20SERIES_J15.pdf
TS10P05G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
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TS10P05G C2G TS10P01G%20SERIES_L2203.pdf
TS10P05G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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TS10P05GHC2G TS10P01G%20SERIES_L2203.pdf
TS10P05GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Produkt ist nicht verfügbar
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TS10P05GHD2G TS10P01G%20SERIES_L2203.pdf
TS10P05GHD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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MBR3035CT C0G MBR3035CT%20SERIES_K2104.pdf
MBR3035CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar
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MBR3035CTHC0G MBR3035CT%20SERIES_K2104.pdf
MBR3035CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBR3035PT C0G MBR3035PT%20SERIES_K2103.pdf
MBR3035PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Produkt ist nicht verfügbar
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BZW04-26B R0G BZW04%20SERIES_I15.pdf
BZW04-26B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6V 41.5V DO204AL
Produkt ist nicht verfügbar
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BZW04-273B R0G BZW04%20SERIES_I15.pdf
BZW04-273B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 273V 438V DO204AL
Produkt ist nicht verfügbar
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BZW04-28B R0G BZW04%20SERIES_J2104.pdf
BZW04-28B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO204AL
Produkt ist nicht verfügbar
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BZW04-299B R0G BZW04%20SERIES_I15.pdf
BZW04-299B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 299V 482V DO204AL
Produkt ist nicht verfügbar
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BZW04-31B R0G BZW04%20SERIES_I15.pdf
BZW04-31B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8V 49.9V DO204AL
Produkt ist nicht verfügbar
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BZW04-33B R0G BZW04%20SERIES_I15.pdf
BZW04-33B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
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BZW04-342B R0G BZW04%20SERIES_I15.pdf
BZW04-342B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 342V 548V DO204AL
Produkt ist nicht verfügbar
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BZW04-40HR0G BZW04%20SERIES_I15.pdf
BZW04-40HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Produkt ist nicht verfügbar
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BZW04-40 R1G BZW04%20SERIES_J2104.pdf
BZW04-40 R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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