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P4KE39AHR0G P4KE39AHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39A R1G P4KE39A R1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39AHR1G P4KE39AHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39AHA0G P4KE39AHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39A B0G P4KE39A B0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AL
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P4KE39AHB0G P4KE39AHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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1.5KE7.5CAHA0G 1.5KE7.5CAHA0G Taiwan Semiconductor Corporation Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE7.5CAHB0G 1.5KE7.5CAHB0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TS10P05G D2G TS10P05G D2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_J15.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
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TS10P05G C2G TS10P05G C2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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TS10P05GHC2G TS10P05GHC2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
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TS10P05GHD2G TS10P05GHD2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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MBR3035CT C0G MBR3035CT C0G Taiwan Semiconductor Corporation MBR3035CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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MBR3035CTHC0G MBR3035CTHC0G Taiwan Semiconductor Corporation MBR3035CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOTT 35V 30A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MBR3035PT C0G MBR3035PT C0G Taiwan Semiconductor Corporation MBR3035PT%20SERIES_K2103.pdf Description: DIODE ARR SCHOTT 35V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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BZW04-26B R0G BZW04-26B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 25.6V 41.5V DO204AL
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BZW04-273B R0G BZW04-273B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 273V 438V DO204AL
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BZW04-28B R0G BZW04-28B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 28.2VWM 45.7VC DO204AL
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BZW04-299B R0G BZW04-299B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 299V 482V DO204AL
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BZW04-31B R0G BZW04-31B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 30.8V 49.9V DO204AL
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BZW04-33B R0G BZW04-33B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 33.3V 53.9V DO204AL
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BZW04-342B R0G BZW04-342B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 342V 548V DO204AL
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BZW04-40HR0G BZW04-40HR0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 40.2V 64.8V DO204AL
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BZW04-40 R1G BZW04-40 R1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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BZW04-40HR1G BZW04-40HR1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
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BZW04-40 A0G BZW04-40 A0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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BZW04-40HA0G BZW04-40HA0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Power - Peak Pulse: 400W
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BZW04-40HB0G BZW04-40HB0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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RS1GAL M3G RS1GAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 400V, FAST RECOVERY R
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RS1GAL M3G RS1GAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 400V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
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ES1F R3G ES1F R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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ES1F R3G ES1F R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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ES1FL RVG ES1FL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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ES1FL RVG ES1FL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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ES1F M2G ES1F M2G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 300V 1A DO214AC
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ES1FHM2G ES1FHM2G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 300V 1A DO214AC
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ES1FL RQG ES1FL RQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES1FLHRQG ES1FLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1FLHRVG ES1FLHRVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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ES1FL RUG ES1FL RUG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES1FHR3G ES1FHR3G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 300V 1A DO214AC
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ES1FLHR3G ES1FLHR3G Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1FL RHG ES1FL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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ES1FLHRHG ES1FLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1FL M2G ES1FL M2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1FL MHG ES1FL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1FLHM2G ES1FLHM2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar
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ES1FLHMHG ES1FLHMHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
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ES1FL MQG ES1FL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1FL MTG ES1FL MTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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ES1FL RTG ES1FL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1FLHMQG ES1FLHMQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
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ES1FLHMTG ES1FLHMTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1FLHRTG ES1FLHRTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
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1N5255B A0G 1N5255B A0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_G1804.pdf Description: DIODE ZENER 28V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 44 Ohms
Voltage - Zener (Nom) (Vz): 28 V
Operating Temperature: 100°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SMAJ14CHR3G SMAJ14CHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 14VWM 25.8VC DO214AC
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1800 Stücke
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SMAJ14CHR3G SMAJ14CHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 14VWM 25.8VC DO214AC
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Qualification: AEC-Q101
Grade: Automotive
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SMAJ14HR3G SMAJ14HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SMAJ14HR3G SMAJ14HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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P6SMB39A M4G P6SMB39A M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
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P4KE39AHR0G P4KE%20SERIES_M1602.pdf
P4KE39AHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
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P4KE39A R1G P4KE%20SERIES_M1602.pdf
P4KE39A R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39AHR1G P4KE%20SERIES_M1602.pdf
P4KE39AHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39AHA0G P4KE%20SERIES_M1602.pdf
P4KE39AHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
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P4KE39A B0G P4KE%20SERIES_N2104.pdf
P4KE39A B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AL
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P4KE39AHB0G P4KE%20SERIES_M1602.pdf
P4KE39AHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
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1.5KE7.5CAHA0G
1.5KE7.5CAHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE7.5CAHB0G 1.5KE%20SERIES_O2104.pdf
1.5KE7.5CAHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS10P05G D2G TS10P01G%20SERIES_J15.pdf
TS10P05G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
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TS10P05G C2G TS10P01G%20SERIES_L2203.pdf
TS10P05G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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TS10P05GHC2G TS10P01G%20SERIES_L2203.pdf
TS10P05GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Produkt ist nicht verfügbar
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TS10P05GHD2G TS10P01G%20SERIES_L2203.pdf
TS10P05GHD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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MBR3035CT C0G MBR3035CT%20SERIES_K2104.pdf
MBR3035CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar
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MBR3035CTHC0G MBR3035CT%20SERIES_K2104.pdf
MBR3035CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBR3035PT C0G MBR3035PT%20SERIES_K2103.pdf
MBR3035PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Produkt ist nicht verfügbar
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BZW04-26B R0G BZW04%20SERIES_I15.pdf
BZW04-26B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6V 41.5V DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZW04-273B R0G BZW04%20SERIES_I15.pdf
BZW04-273B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 273V 438V DO204AL
Produkt ist nicht verfügbar
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BZW04-28B R0G BZW04%20SERIES_J2104.pdf
BZW04-28B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZW04-299B R0G BZW04%20SERIES_I15.pdf
BZW04-299B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 299V 482V DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZW04-31B R0G BZW04%20SERIES_I15.pdf
BZW04-31B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8V 49.9V DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZW04-33B R0G BZW04%20SERIES_I15.pdf
BZW04-33B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZW04-342B R0G BZW04%20SERIES_I15.pdf
BZW04-342B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 342V 548V DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZW04-40HR0G BZW04%20SERIES_I15.pdf
BZW04-40HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZW04-40 R1G BZW04%20SERIES_J2104.pdf
BZW04-40 R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZW04-40HR1G BZW04%20SERIES_J2104.pdf
BZW04-40HR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar
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BZW04-40 A0G BZW04%20SERIES_J2104.pdf
BZW04-40 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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BZW04-40HA0G BZW04%20SERIES_J2104.pdf
BZW04-40HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Power - Peak Pulse: 400W
Produkt ist nicht verfügbar
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BZW04-40HB0G BZW04%20SERIES_J2104.pdf
BZW04-40HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 40.2V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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RS1GAL M3G
RS1GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3500 Stücke
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RS1GAL M3G
RS1GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
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ES1F R3G ES1A%20SERIES_O2112.pdf
ES1F R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1F R3G ES1A%20SERIES_O2112.pdf
ES1F R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ES1FL RVG ES1AL%20SERIES_L2103.pdf
ES1FL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1FL RVG ES1AL%20SERIES_L2103.pdf
ES1FL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ES1F M2G ES1A%20SERIES_M15.pdf
ES1F M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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ES1FHM2G ES1A%20SERIES_M15.pdf
ES1FHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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ES1FL RQG ES1AL%20SERIES_L2103.pdf
ES1FL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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ES1FLHRQG ES1AL%20SERIES_K15.pdf
ES1FLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
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ES1FLHRVG ES1AL%20SERIES_L2103.pdf
ES1FLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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ES1FL RUG ES1AL%20SERIES_L2103.pdf
ES1FL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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ES1FHR3G ES1A%20SERIES_M15.pdf
ES1FHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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ES1FLHR3G ES1AL%20SERIES_K15.pdf
ES1FLHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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ES1FL RHG ES1AL%20SERIES_L2103.pdf
ES1FL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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ES1FLHRHG ES1AL%20SERIES_L2103.pdf
ES1FLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1FL M2G ES1AL%20SERIES_L2103.pdf
ES1FL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1FL MHG ES1AL%20SERIES_L2103.pdf
ES1FL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1FLHM2G ES1AL%20SERIES_L2103.pdf
ES1FLHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar
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ES1FLHMHG ES1AL%20SERIES_L2103.pdf
ES1FLHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Produkt ist nicht verfügbar
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ES1FL MQG ES1AL%20SERIES_L2103.pdf
ES1FL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES1FL MTG ES1AL%20SERIES_L2103.pdf
ES1FL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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ES1FL RTG ES1AL%20SERIES_K15.pdf
ES1FL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1FLHMQG ES1AL%20SERIES_K15.pdf
ES1FLHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1FLHMTG ES1AL%20SERIES_K15.pdf
ES1FLHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1FLHRTG ES1AL%20SERIES_K15.pdf
ES1FLHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Produkt ist nicht verfügbar
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1N5255B A0G 1N5221B%20SERIES_G1804.pdf
1N5255B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 28V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 44 Ohms
Voltage - Zener (Nom) (Vz): 28 V
Operating Temperature: 100°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SMAJ14CHR3G
SMAJ14CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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SMAJ14CHR3G
SMAJ14CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SMAJ14HR3G SMAJ%20SERIES_U2102.pdf
SMAJ14HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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SMAJ14HR3G SMAJ%20SERIES_U2102.pdf
SMAJ14HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 15.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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P6SMB39A M4G P6SMB%20SERIES_P2102.pdf
P6SMB39A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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