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TS79L05CY RMG TS79L05CY RMG Taiwan Semiconductor Corporation TS79L05CY_J2001.pdf Description: IC REG LINEAR -5V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TSM038N04LCP ROG TSM038N04LCP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
Produkt ist nicht verfügbar
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TSM038N04LCP ROG TSM038N04LCP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
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BZD27C18PW BZD27C18PW Taiwan Semiconductor Corporation BZD27C11PW SERIES_D2203.pdf Description: DIODE ZENER 18V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
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BZD27C18PW BZD27C18PW Taiwan Semiconductor Corporation BZD27C11PW SERIES_D2203.pdf Description: DIODE ZENER 18V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±6.4%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
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TSM4NB60CH C5G TSM4NB60CH C5G Taiwan Semiconductor Corporation TSM4NB60_L1901.pdf Description: MOSFET N-CH 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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TS2940CZ33 C0G TS2940CZ33 C0G Taiwan Semiconductor Corporation pdf.php?pn=TS2940CZ33 Description: IC REG LINEAR 3.3V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
Produkt ist nicht verfügbar
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TS2940CZ50 C0G TS2940CZ50 C0G Taiwan Semiconductor Corporation pdf.php?pn=TS2940CZ50 Description: IC REG LINEAR 5V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
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500+2.03 EUR
1000+1.69 EUR
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SMB10J30AHR5G SMB10J30AHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMB10J30AHR5G SMB10J30AHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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HS2DA R3G HS2DA R3G Taiwan Semiconductor Corporation HS2AA%20SERIES_H14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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HS2DA R3G HS2DA R3G Taiwan Semiconductor Corporation HS2AA%20SERIES_H14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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RS2DAL M3G RS2DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 2A, 200V, FAST RECOVERY R
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RS2DAL M3G RS2DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 2A, 200V, FAST RECOVERY R
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S2DAL M3G Taiwan Semiconductor Corporation Description: 2A, 200V, STANDARD RECOVERY RECT
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S2DAL M3G Taiwan Semiconductor Corporation Description: 2A, 200V, STANDARD RECOVERY RECT
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HS2DAL M3G HS2DAL M3G Taiwan Semiconductor Corporation Description: 50NS, 2A, 200V, HIGH EFFICIENT R
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HS2DAL M3G HS2DAL M3G Taiwan Semiconductor Corporation Description: 50NS, 2A, 200V, HIGH EFFICIENT R
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RS2DA R3G RS2DA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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RS2DA R3G RS2DA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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S2DA M2G S2DA M2G Taiwan Semiconductor Corporation S2AA%20SERIES_J15.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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RS2DA M2G RS2DA M2G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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S2DA R3G S2DA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_J15.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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S2DA R3G S2DA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_J15.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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RS2DAHM2G RS2DAHM2G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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RS2DAHR3G RS2DAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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RS2DAHR3G RS2DAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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SFS1603G MNG SFS1603G MNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 150V 16A TO263AB
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SFS1603GHMNG SFS1603GHMNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 150V 16A TO263AB
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TSF20U100C C0G TSF20U100C C0G Taiwan Semiconductor Corporation TSF20U100C_E2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
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RS1GL RQG RS1GL RQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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ES1GL RFG ES1GL RFG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GL RHG RS1GL RHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S1GL RHG S1GL RHG Taiwan Semiconductor Corporation S1xL_Rev.O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
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RS1GL RTG RS1GL RTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 800MA SUBSMA
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S1GL RTG S1GL RTG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
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HS1GL RFG HS1GL RFG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GL RFG RS1GL RFG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S1GL RFG S1GL RFG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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HS1GL RUG HS1GL RUG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S1GL RVG S1GL RVG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
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RS1MFS MXG RS1MFS MXG Taiwan Semiconductor Corporation RS1xFS_DS.pdf Description: DIODE, FAST, 1A, 1000V
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TSM038N03PQ33 RGG TSM038N03PQ33 RGG Taiwan Semiconductor Corporation TSM038N03PQ33_B1610.pdf Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
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5000+0.4 EUR
10000+0.37 EUR
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TSM038N03PQ33 RGG TSM038N03PQ33 RGG Taiwan Semiconductor Corporation TSM038N03PQ33_B1610.pdf Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
auf Bestellung 11217 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
ES2AAHR3G ES2AAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2AAHR3G ES2AAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2AA R3G ES2AA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2AA R3G ES2AA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2AAHM2G ES2AAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2AA M2G ES2AA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2A R5G ES2A R5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2AHM4G ES2AHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2AHR5G ES2AHR5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK35B M4G SK35B M4G Taiwan Semiconductor Corporation SK32B%20SERIES_P2212.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SK35BHM4G SK35BHM4G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK35B R5G SK35B R5G Taiwan Semiconductor Corporation SK32B%20SERIES_P2212.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SK35BHR5G SK35BHR5G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS13 R3G SS13 R3G Taiwan Semiconductor Corporation SS12%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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ES2GAL M3G ES2GAL M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
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ES2GAL M3G ES2GAL M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
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TS79L05CY RMG TS79L05CY_J2001.pdf
TS79L05CY RMG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR -5V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TSM038N04LCP ROG
TSM038N04LCP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
Produkt ist nicht verfügbar
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TSM038N04LCP ROG
TSM038N04LCP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
auf Bestellung 480 Stücke:
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Anzahl Preis
7+2.6 EUR
10+2.13 EUR
100+1.66 EUR
Mindestbestellmenge: 7
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BZD27C18PW BZD27C11PW SERIES_D2203.pdf
BZD27C18PW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.14 EUR
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BZD27C18PW BZD27C11PW SERIES_D2203.pdf
BZD27C18PW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±6.4%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
auf Bestellung 24895 Stücke:
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Anzahl Preis
25+0.72 EUR
39+0.45 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.15 EUR
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TSM4NB60CH C5G TSM4NB60_L1901.pdf
TSM4NB60CH C5G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 14316 Stücke:
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Anzahl Preis
16+1.13 EUR
75+0.9 EUR
150+0.72 EUR
525+0.61 EUR
1050+0.6 EUR
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TS2940CZ33 C0G pdf.php?pn=TS2940CZ33
TS2940CZ33 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
Produkt ist nicht verfügbar
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TS2940CZ50 C0G pdf.php?pn=TS2940CZ50
TS2940CZ50 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
auf Bestellung 3681 Stücke:
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Anzahl Preis
6+3.43 EUR
10+3.08 EUR
25+2.91 EUR
100+2.48 EUR
250+2.33 EUR
500+2.03 EUR
1000+1.69 EUR
2500+1.57 EUR
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SMB10J30AHR5G SMB10J%20SERIES_B2102.pdf
SMB10J30AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Anzahl Preis
850+1.13 EUR
1700+0.92 EUR
Mindestbestellmenge: 850
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SMB10J30AHR5G SMB10J%20SERIES_B2102.pdf
SMB10J30AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2539 Stücke:
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Anzahl Preis
9+2.09 EUR
11+1.72 EUR
100+1.34 EUR
Mindestbestellmenge: 9
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HS2DA R3G HS2AA%20SERIES_H14.pdf
HS2DA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
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HS2DA R3G HS2AA%20SERIES_H14.pdf
HS2DA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
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RS2DAL M3G
RS2DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
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RS2DAL M3G
RS2DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
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S2DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 200V, STANDARD RECOVERY RECT
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S2DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 200V, STANDARD RECOVERY RECT
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HS2DAL M3G
HS2DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
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HS2DAL M3G
HS2DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
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RS2DA R3G RS2AA%20SERIES_G14.pdf
RS2DA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
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RS2DA R3G RS2AA%20SERIES_G14.pdf
RS2DA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
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S2DA M2G S2AA%20SERIES_J15.pdf
S2DA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
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RS2DA M2G RS2AA%20SERIES_G14.pdf
RS2DA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
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S2DA R3G S2AA%20SERIES_J15.pdf
S2DA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
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S2DA R3G S2AA%20SERIES_J15.pdf
S2DA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
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RS2DAHM2G RS2AA%20SERIES_G14.pdf
RS2DAHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
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RS2DAHR3G RS2AA%20SERIES_G14.pdf
RS2DAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
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RS2DAHR3G RS2AA%20SERIES_G14.pdf
RS2DAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Produkt ist nicht verfügbar
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SFS1603G MNG SFS1601G%20SERIES_N15.pdf
SFS1603G MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
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SFS1603GHMNG SFS1601G%20SERIES_N15.pdf
SFS1603GHMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
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TSF20U100C C0G TSF20U100C_E2105.pdf
TSF20U100C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 2895 Stücke:
Lieferzeit 10-14 Tag (e)
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RS1GL RQG RS1AL%20SERIES_N2103.pdf
RS1GL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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ES1GL RFG ES1AL%20SERIES_L2103.pdf
ES1GL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GL RHG RS1AL%20SERIES_N2103.pdf
RS1GL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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S1GL RHG S1xL_Rev.O15.pdf
S1GL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
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RS1GL RTG RS1AL%20SERIES_N2103.pdf
RS1GL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Produkt ist nicht verfügbar
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S1GL RTG S1AL%20SERIES_O15.pdf
S1GL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
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HS1GL RFG HS1AL%20SERIES_C2103.pdf
HS1GL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GL RFG RS1AL%20SERIES_N2103.pdf
RS1GL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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S1GL RFG S1AL%20SERIES_Q2108.pdf
S1GL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL RUG HS1AL%20SERIES_C2103.pdf
HS1GL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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S1GL RVG S1AL%20SERIES_O15.pdf
S1GL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
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RS1MFS MXG RS1xFS_DS.pdf
RS1MFS MXG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 1000V
Produkt ist nicht verfügbar
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TSM038N03PQ33 RGG TSM038N03PQ33_B1610.pdf
TSM038N03PQ33 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.4 EUR
10000+0.37 EUR
Mindestbestellmenge: 5000
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TSM038N03PQ33 RGG TSM038N03PQ33_B1610.pdf
TSM038N03PQ33 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
auf Bestellung 11217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 11
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ES2AAHR3G ES2AA%20SERIES_M2102.pdf
ES2AAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2AAHR3G ES2AA%20SERIES_M2102.pdf
ES2AAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2AA R3G ES2AA%20SERIES_M2102.pdf
ES2AA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2AA R3G ES2AA%20SERIES_M2102.pdf
ES2AA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2AAHM2G ES2AA%20SERIES_M2102.pdf
ES2AAHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2AA M2G ES2AA%20SERIES_M2102.pdf
ES2AA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2A R5G ES2A%20SERIES_L2102.pdf
ES2A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES2AHM4G ES2A%20SERIES_L2102.pdf
ES2AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2AHR5G ES2A%20SERIES_L2102.pdf
ES2AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK35B M4G SK32B%20SERIES_P2212.pdf
SK35B M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SK35BHM4G SK32BH%20SERIES_B2212.pdf
SK35BHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK35B R5G SK32B%20SERIES_P2212.pdf
SK35B R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SK35BHR5G SK32BH%20SERIES_B2212.pdf
SK35BHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS13 R3G SS12%20SERIES_Q2102.pdf
SS13 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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ES2GAL M3G
ES2GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ES2GAL M3G
ES2GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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