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SMF28AHRVG SMF28AHRVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 28VWM 45.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMF28AHRVG SMF28AHRVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 28VWM 45.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 451 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.22 EUR
28+ 0.95 EUR
100+ 0.57 EUR
Mindestbestellmenge: 22
SMF28A RQG SMF28A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
SMF28AHRQG SMF28AHRQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
MTZJ10SB R0G MTZJ10SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 9.66V 500MW DO34
Produkt ist nicht verfügbar
MTZJ10SC R0G MTZJ10SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 9.95V 500MW DO34
Produkt ist nicht verfügbar
MTZJ10SD R0G MTZJ10SD R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 10.21V 500MW DO34
Produkt ist nicht verfügbar
MTZJ11SA R0G MTZJ11SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 10.45V 500MW DO34
Produkt ist nicht verfügbar
MTZJ11SB R0G MTZJ11SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 10.78V 500MW DO34
Produkt ist nicht verfügbar
SS19 R3G SS19 R3G Taiwan Semiconductor Corporation SS12%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 90V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
SS19 R3G SS19 R3G Taiwan Semiconductor Corporation SS12%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 90V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
SF1604GHC0G SF1604GHC0G Taiwan Semiconductor Corporation SF1601G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
RS2AA R3G RS2AA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 50V 1.5A DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 21-28 Tag (e)
1800+0.47 EUR
3600+ 0.43 EUR
Mindestbestellmenge: 1800
RS2AA R3G RS2AA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 50V 1.5A DO214AC
auf Bestellung 4758 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
26+ 1.03 EUR
100+ 0.77 EUR
500+ 0.61 EUR
Mindestbestellmenge: 22
BZX585B6V2 RSG BZX585B6V2 RSG Taiwan Semiconductor Corporation pdf.php?pn=BZX585B6V2 Description: DIODE ZENER 6.2V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
Produkt ist nicht verfügbar
1.5SMC100A M6G 1.5SMC100A M6G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 85.5V 137V DO214AB
Produkt ist nicht verfügbar
1.5SMC100A V6G 1.5SMC100A V6G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 85.5V 137V DO214AB
Produkt ist nicht verfügbar
1.5SMC100A V7G 1.5SMC100A V7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 85.5VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC100A R7G 1.5SMC100A R7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 85.5VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC100AHR7G 1.5SMC100AHR7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 85.5VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC100AHM6G 1.5SMC100AHM6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 85.5VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF1603G C0G SF1603G C0G Taiwan Semiconductor Corporation SF1601G%20SERIES_I2104.pdf Description: DIODE GEN PURP 150V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
SF1603GHC0G SF1603GHC0G Taiwan Semiconductor Corporation SF1601G%20SERIES_I2104.pdf Description: DIODE GEN PURP 150V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF1603PT C0G SF1603PT C0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 150V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
SF1604PT C0G SF1604PT C0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
SF1605PT C0G SF1605PT C0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 300V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
ES2A M4G ES2A M4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
S12KCHR7G S12KCHR7G Taiwan Semiconductor Corporation S12GCH%20SERIES_A2102.pdf Description: DIODE GEN PURP 800V 12A DO214AB
Produkt ist nicht verfügbar
S12KCHR7G S12KCHR7G Taiwan Semiconductor Corporation S12GCH%20SERIES_A2102.pdf Description: DIODE GEN PURP 800V 12A DO214AB
auf Bestellung 127 Stücke:
Lieferzeit 21-28 Tag (e)
UR4KB80 C2G UR4KB80 C2G Taiwan Semiconductor Corporation UR4KB60%20SERIES_J13.pdf Description: BRIDGE RECT 1PHASE 800V 4A D3K
auf Bestellung 5855 Stücke:
Lieferzeit 21-28 Tag (e)
UR3KB80 C2G UR3KB80 C2G Taiwan Semiconductor Corporation UR3KB60%20SERIES_I1701.pdf Description: BRIDGE RECT 1PHASE 800V 3A D3K
auf Bestellung 1324 Stücke:
Lieferzeit 21-28 Tag (e)
MBS2 RCG MBS2 RCG Taiwan Semiconductor Corporation MBS2%20SERIES_P2103.pdf Description: BRIDGE RECT 1P 200V 500MA MBS
auf Bestellung 2481 Stücke:
Lieferzeit 21-28 Tag (e)
MBS2HRCG MBS2HRCG Taiwan Semiconductor Corporation MBS2%20SERIES_O15.pdf Description: BRIDGE RECT 1P 200V 500MA MBS
Produkt ist nicht verfügbar
BZX585B18 RSG BZX585B18 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 18V 200MW SOD523F
Produkt ist nicht verfügbar
SF38G R0G SF38G R0G Taiwan Semiconductor Corporation SF31G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Produkt ist nicht verfügbar
SF38G B0G SF38G B0G Taiwan Semiconductor Corporation SF31G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
SF38GHR0G SF38GHR0G Taiwan Semiconductor Corporation SF31G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Produkt ist nicht verfügbar
SF38GHA0G SF38GHA0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF38GHB0G SF38GHB0G Taiwan Semiconductor Corporation SF31G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1KSMB43A M4G 1KSMB43A M4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
1KSMB43AHM4G 1KSMB43AHM4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
1KSMB43A R5G 1KSMB43A R5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
1KSMB43AHR5G 1KSMB43AHR5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
MCR100-5 A1G MCR100-5 A1G Taiwan Semiconductor Corporation MCR100-3%20SERIES_D15.pdf Description: SCR 300V 800MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 300 V
Produkt ist nicht verfügbar
SMCJ8.0CA R7G SMCJ8.0CA R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 8V 13.6V DO214AB
Produkt ist nicht verfügbar
SMCJ8.0CAHR7G SMCJ8.0CAHR7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 8V 13.6V DO214AB
Produkt ist nicht verfügbar
SMCJ8.0CA M6G SMCJ8.0CA M6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 8V 13.6V DO214AB
Produkt ist nicht verfügbar
SMBJ8.0A M4G SMBJ8.0A M4G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
SMBJ8.0AHM4G SMBJ8.0AHM4G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
SMBJ8.0A R5G SMBJ8.0A R5G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
SMBJ8.0AHR5G SMBJ8.0AHR5G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
1SMA4757 M2G 1SMA4757 M2G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_O15.pdf Description: DIODE ZENER 51V 1.25W DO214AC
Produkt ist nicht verfügbar
1N5221B A0G 1N5221B A0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_G1804.pdf Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
BZT55B4V7 L1G BZT55B4V7 L1G Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: DIODE ZENER 4.7V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Produkt ist nicht verfügbar
BZT55B4V7 L0G BZT55B4V7 L0G Taiwan Semiconductor Corporation Description: DIODE ZENER 4.7V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Produkt ist nicht verfügbar
SRAF1060 C0G SRAF1060 C0G Taiwan Semiconductor Corporation SRAF1020%20SERIES_I2105.pdf Description: DIODE SCHOTTKY 60V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
SRAF1060HC0G SRAF1060HC0G Taiwan Semiconductor Corporation SRAF1020%20SERIES_I2105.pdf Description: DIODE SCHOTTKY 60V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SR303 R0G SR303 R0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
SR303 A0G SR303 A0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
SR303HR0G SR303HR0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
SMF28AHRVG SMF5.0A%20SERIES_D2103.pdf
SMF28AHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMF28AHRVG SMF5.0A%20SERIES_D2103.pdf
SMF28AHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 451 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
28+ 0.95 EUR
100+ 0.57 EUR
Mindestbestellmenge: 22
SMF28A RQG SMF5.0A%20SERIES_B1709.pdf
SMF28A RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
SMF28AHRQG SMF5.0A%20SERIES_B1709.pdf
SMF28AHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
MTZJ10SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ10SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.66V 500MW DO34
Produkt ist nicht verfügbar
MTZJ10SC R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ10SC R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.95V 500MW DO34
Produkt ist nicht verfügbar
MTZJ10SD R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ10SD R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10.21V 500MW DO34
Produkt ist nicht verfügbar
MTZJ11SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ11SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10.45V 500MW DO34
Produkt ist nicht verfügbar
MTZJ11SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ11SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10.78V 500MW DO34
Produkt ist nicht verfügbar
SS19 R3G SS12%20SERIES_Q2102.pdf
SS19 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
SS19 R3G SS12%20SERIES_Q2102.pdf
SS19 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
SF1604GHC0G SF1601G%20SERIES_I2104.pdf
SF1604GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
RS2AA R3G RS2AA%20SERIES_H2102.pdf
RS2AA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1800+0.47 EUR
3600+ 0.43 EUR
Mindestbestellmenge: 1800
RS2AA R3G RS2AA%20SERIES_H2102.pdf
RS2AA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
auf Bestellung 4758 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
26+ 1.03 EUR
100+ 0.77 EUR
500+ 0.61 EUR
Mindestbestellmenge: 22
BZX585B6V2 RSG pdf.php?pn=BZX585B6V2
BZX585B6V2 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
Produkt ist nicht verfügbar
1.5SMC100A M6G 1.5SMC SERIES_Q2004.pdf
1.5SMC100A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5V 137V DO214AB
Produkt ist nicht verfügbar
1.5SMC100A V6G 1.5SMC SERIES_Q2004.pdf
1.5SMC100A V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5V 137V DO214AB
Produkt ist nicht verfügbar
1.5SMC100A V7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC100A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC100A R7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC100A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC100AHR7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC100AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC100AHM6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC100AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF1603G C0G SF1601G%20SERIES_I2104.pdf
SF1603G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
SF1603GHC0G SF1601G%20SERIES_I2104.pdf
SF1603GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF1603PT C0G SF1601PT%20SERIES_G2103.pdf
SF1603PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
SF1604PT C0G SF1601PT%20SERIES_G2103.pdf
SF1604PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
SF1605PT C0G SF1601PT%20SERIES_G2103.pdf
SF1605PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
ES2A M4G ES2A%20SERIES_L2102.pdf
ES2A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
S12KCHR7G S12GCH%20SERIES_A2102.pdf
S12KCHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 12A DO214AB
Produkt ist nicht verfügbar
S12KCHR7G S12GCH%20SERIES_A2102.pdf
S12KCHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 12A DO214AB
auf Bestellung 127 Stücke:
Lieferzeit 21-28 Tag (e)
UR4KB80 C2G UR4KB60%20SERIES_J13.pdf
UR4KB80 C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A D3K
auf Bestellung 5855 Stücke:
Lieferzeit 21-28 Tag (e)
UR3KB80 C2G UR3KB60%20SERIES_I1701.pdf
UR3KB80 C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 3A D3K
auf Bestellung 1324 Stücke:
Lieferzeit 21-28 Tag (e)
MBS2 RCG MBS2%20SERIES_P2103.pdf
MBS2 RCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 500MA MBS
auf Bestellung 2481 Stücke:
Lieferzeit 21-28 Tag (e)
MBS2HRCG MBS2%20SERIES_O15.pdf
MBS2HRCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 500MA MBS
Produkt ist nicht verfügbar
BZX585B18 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B18 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 200MW SOD523F
Produkt ist nicht verfügbar
SF38G R0G SF31G%20SERIES_H2105.pdf
SF38G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Produkt ist nicht verfügbar
SF38G B0G SF31G%20SERIES_H2105.pdf
SF38G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
SF38GHR0G SF31G%20SERIES_H2105.pdf
SF38GHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Produkt ist nicht verfügbar
SF38GHA0G
SF38GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF38GHB0G SF31G%20SERIES_H2105.pdf
SF38GHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1KSMB43A M4G 1KSMB SERIES_H1902.pdf
1KSMB43A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
1KSMB43AHM4G 1KSMB SERIES_H1902.pdf
1KSMB43AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
1KSMB43A R5G 1KSMB SERIES_H1902.pdf
1KSMB43A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
1KSMB43AHR5G 1KSMB SERIES_H1902.pdf
1KSMB43AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
MCR100-5 A1G MCR100-3%20SERIES_D15.pdf
MCR100-5 A1G
Hersteller: Taiwan Semiconductor Corporation
Description: SCR 300V 800MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 300 V
Produkt ist nicht verfügbar
SMCJ8.0CA R7G SMCJ SERIES_R2004.pdf
SMCJ8.0CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8V 13.6V DO214AB
Produkt ist nicht verfügbar
SMCJ8.0CAHR7G SMCJ SERIES_R2004.pdf
SMCJ8.0CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8V 13.6V DO214AB
Produkt ist nicht verfügbar
SMCJ8.0CA M6G SMCJ SERIES_R2004.pdf
SMCJ8.0CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8V 13.6V DO214AB
Produkt ist nicht verfügbar
SMBJ8.0A M4G SMBJ SERIES_Q2004.pdf
SMBJ8.0A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
SMBJ8.0AHM4G SMBJ SERIES_Q2004.pdf
SMBJ8.0AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
SMBJ8.0A R5G SMBJ SERIES_Q2004.pdf
SMBJ8.0A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
SMBJ8.0AHR5G SMBJ SERIES_Q2004.pdf
SMBJ8.0AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
1SMA4757 M2G 1SMA4737%20SERIES_O15.pdf
1SMA4757 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1.25W DO214AC
Produkt ist nicht verfügbar
1N5221B A0G 1N5221B%20SERIES_G1804.pdf
1N5221B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
BZT55B4V7 L1G BZT55B2V4%20SERIES_I2301.pdf
BZT55B4V7 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Produkt ist nicht verfügbar
BZT55B4V7 L0G
BZT55B4V7 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Produkt ist nicht verfügbar
SRAF1060 C0G SRAF1020%20SERIES_I2105.pdf
SRAF1060 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
SRAF1060HC0G SRAF1020%20SERIES_I2105.pdf
SRAF1060HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SR303 R0G SR302%20SERIES_J2105.pdf
SR303 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
SR303 A0G SR302%20SERIES_J2105.pdf
SR303 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
SR303HR0G SR302%20SERIES_J2105.pdf
SR303HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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