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SF1604PT C0G SF1604PT C0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 200V 16A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SF1605PT C0G SF1605PT C0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 300V 16A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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ES2A M4G ES2A M4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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S12KCHR7G S12KCHR7G Taiwan Semiconductor Corporation S12GCH%20SERIES_A2102.pdf Description: DIODE GEN PURP 800V 12A DO214AB
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S12KCHR7G S12KCHR7G Taiwan Semiconductor Corporation S12GCH%20SERIES_A2102.pdf Description: DIODE GEN PURP 800V 12A DO214AB
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UR4KB80 C2G UR4KB80 C2G Taiwan Semiconductor Corporation UR4KB60%20SERIES_J13.pdf Description: BRIDGE RECT 1PHASE 800V 4A D3K
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UR3KB80 C2G UR3KB80 C2G Taiwan Semiconductor Corporation UR3KB60%20SERIES_I1701.pdf Description: BRIDGE RECT 1PHASE 800V 3A D3K
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MBS2 RCG MBS2 RCG Taiwan Semiconductor Corporation MBS2%20SERIES_P2103.pdf Description: BRIDGE RECT 1P 200V 500MA MBS
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MBS2HRCG MBS2HRCG Taiwan Semiconductor Corporation MBS2%20SERIES_O15.pdf Description: BRIDGE RECT 1P 200V 500MA MBS
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BZX585B18 RSG BZX585B18 RSG Taiwan Semiconductor Corporation BZX585B2V4 SERIES_C1607.pdf Description: DIODE ZENER 18V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
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SF38G R0G SF38G R0G Taiwan Semiconductor Corporation SF31G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 3A DO201AD
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SF38G B0G SF38G B0G Taiwan Semiconductor Corporation SF31G%20SERIES_H2105.pdf Description: DIODE STANDARD 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
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SF38GHR0G SF38GHR0G Taiwan Semiconductor Corporation SF31G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 3A DO201AD
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SF38GHA0G SF38GHA0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
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SF38GHB0G SF38GHB0G Taiwan Semiconductor Corporation SF31G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
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1KSMB43A M4G 1KSMB43A M4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 36.8V 59.3V DO214AA
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1KSMB43AHM4G 1KSMB43AHM4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 36.8V 59.3V DO214AA
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1KSMB43A R5G 1KSMB43A R5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 36.8V 59.3V DO214AA
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1KSMB43AHR5G 1KSMB43AHR5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 36.8V 59.3V DO214AA
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MCR100-5 A1G MCR100-5 A1G Taiwan Semiconductor Corporation MCR100-3%20SERIES_D15.pdf Description: SCR 300V 800MA TO92
Voltage - Off State: 300 V
Current - On State (It (RMS)) (Max): 800 mA
Supplier Device Package: TO-92
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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SMCJ8.0CA R7G SMCJ8.0CA R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 8V 13.6V DO214AB
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SMCJ8.0CAHR7G SMCJ8.0CAHR7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 8V 13.6V DO214AB
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SMCJ8.0CA M6G SMCJ8.0CA M6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 8V 13.6V DO214AB
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SMBJ8.0A M4G SMBJ8.0A M4G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
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SMBJ8.0AHM4G SMBJ8.0AHM4G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
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SMBJ8.0A R5G SMBJ8.0A R5G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
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SMBJ8.0AHR5G SMBJ8.0AHR5G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
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1SMA4757 M2G 1SMA4757 M2G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_O15.pdf Description: DIODE ZENER 51V 1.25W DO214AC
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1N5221B A0G 1N5221B A0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_G1804.pdf Description: DIODE ZENER 2.4V 500MW DO35
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BZT55B4V7 L1G BZT55B4V7 L1G Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: DIODE ZENER 4.7V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT55B4V7 L0G BZT55B4V7 L0G Taiwan Semiconductor Corporation Description: DIODE ZENER 4.7V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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SRAF1060 C0G SRAF1060 C0G Taiwan Semiconductor Corporation SRAF1020%20SERIES_I2105.pdf Description: DIODE SCHOTTKY 60V 10A ITO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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SRAF1060HC0G SRAF1060HC0G Taiwan Semiconductor Corporation SRAF1020%20SERIES_I2105.pdf Description: DIODE SCHOTTKY 60V 10A ITO220AC
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
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SR303 R0G SR303 R0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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SR303 A0G SR303 A0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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SR303HR0G SR303HR0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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SR303HA0G SR303HA0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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SR3030PT C0G SR3030PT C0G Taiwan Semiconductor Corporation SR3020PT%20SERIES_H2103.pdf Description: DIODE ARRAY SCHOTTKY 30V TO247AD
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SR3030PTHC0G SR3030PTHC0G Taiwan Semiconductor Corporation SR3020PT%20SERIES_H2103.pdf Description: DIODE ARRAY SCHOTTKY 30V TO247AD
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SR303 B0G SR303 B0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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SR303HB0G SR303HB0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
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SMAJ85HR3G SMAJ85HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 85VWM 151VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 151V
Voltage - Breakdown (Min): 94.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
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SMAJ85HR3G SMAJ85HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 85VWM 151VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 151V
Voltage - Breakdown (Min): 94.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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SMAJ85CHR3G SMAJ85CHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 85VWM 151VC DO214AC
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 151V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
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SMAJ85CHR3G SMAJ85CHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 85VWM 151VC DO214AC
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 151V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2A
auf Bestellung 3569 Stücke:
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21+1.02 EUR
25+0.87 EUR
100+0.65 EUR
500+0.51 EUR
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SMAJ85CAHR3G SMAJ85CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 85VWM 137VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar
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SMAJ85CAHR3G SMAJ85CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 85VWM 137VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PGSMAJ85CA E3G PGSMAJ85CA E3G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 85VWM 137VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PGSMAJ85CA E3G PGSMAJ85CA E3G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 85VWM 137VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PGSMAJ85A R3G PGSMAJ85A R3G Taiwan Semiconductor Corporation PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf Description: TVS DIODE 85VWM 137VC DO214AC
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Produkt ist nicht verfügbar
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SMAJ85AHR3G SMAJ85AHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 85VWM 137VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TS10KL100 D3G TS10KL100 D3G Taiwan Semiconductor Corporation TS10KL60%20SERIES_E15.pdf Description: BRIDGE RECT 1PHASE 1KV 10A KBJL
Produkt ist nicht verfügbar
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TS10KL100HD3G TS10KL100HD3G Taiwan Semiconductor Corporation TS10KL60%20SERIES_E15.pdf Description: BRIDGE RECT 1PHASE 1KV 10A KBJL
Produkt ist nicht verfügbar
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S4M R7G S4M R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 1KV 4A DO214AB
Produkt ist nicht verfügbar
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S4M R7G S4M R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 1KV 4A DO214AB
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KBP203G C2 Taiwan Semiconductor Corporation KBP201G-KBP207G%20_E13_DS.pdf Description: BRIDGE RECT 1PHASE 200V 2A KBP
Produkt ist nicht verfügbar
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KBP203G C2G Taiwan Semiconductor Corporation KBP201G-KBP207G%20_E13_DS.pdf Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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TST20L150CW C0G TST20L150CW C0G Taiwan Semiconductor Corporation TST20L100CW%20SERIES_B14.pdf Description: DIODE SCHOTTKY 150V 10A TO220AB
auf Bestellung 971 Stücke:
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P6SMB36CA M4G P6SMB36CA M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Produkt ist nicht verfügbar
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P6SMB36CAHM4G P6SMB36CAHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Produkt ist nicht verfügbar
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SF1604PT C0G SF1601PT%20SERIES_G2103.pdf
SF1604PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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SF1605PT C0G SF1601PT%20SERIES_G2103.pdf
SF1605PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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ES2A M4G ES2A%20SERIES_L2102.pdf
ES2A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S12KCHR7G S12GCH%20SERIES_A2102.pdf
S12KCHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 12A DO214AB
Produkt ist nicht verfügbar
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S12KCHR7G S12GCH%20SERIES_A2102.pdf
S12KCHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 12A DO214AB
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UR4KB80 C2G UR4KB60%20SERIES_J13.pdf
UR4KB80 C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A D3K
auf Bestellung 5855 Stücke:
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UR3KB80 C2G UR3KB60%20SERIES_I1701.pdf
UR3KB80 C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 3A D3K
auf Bestellung 1324 Stücke:
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MBS2 RCG MBS2%20SERIES_P2103.pdf
MBS2 RCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 500MA MBS
auf Bestellung 2481 Stücke:
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MBS2HRCG MBS2%20SERIES_O15.pdf
MBS2HRCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 500MA MBS
Produkt ist nicht verfügbar
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BZX585B18 RSG BZX585B2V4 SERIES_C1607.pdf
BZX585B18 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
Produkt ist nicht verfügbar
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SF38G R0G SF31G%20SERIES_H2105.pdf
SF38G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Produkt ist nicht verfügbar
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SF38G B0G SF31G%20SERIES_H2105.pdf
SF38G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
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SF38GHR0G SF31G%20SERIES_H2105.pdf
SF38GHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Produkt ist nicht verfügbar
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SF38GHA0G
SF38GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Produkt ist nicht verfügbar
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SF38GHB0G SF31G%20SERIES_H2105.pdf
SF38GHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar
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1KSMB43A M4G 1KSMB SERIES_H1902.pdf
1KSMB43A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
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1KSMB43AHM4G 1KSMB SERIES_H1902.pdf
1KSMB43AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
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1KSMB43A R5G 1KSMB SERIES_H1902.pdf
1KSMB43A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
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1KSMB43AHR5G 1KSMB SERIES_H1902.pdf
1KSMB43AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
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MCR100-5 A1G MCR100-3%20SERIES_D15.pdf
MCR100-5 A1G
Hersteller: Taiwan Semiconductor Corporation
Description: SCR 300V 800MA TO92
Voltage - Off State: 300 V
Current - On State (It (RMS)) (Max): 800 mA
Supplier Device Package: TO-92
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SMCJ8.0CA R7G SMCJ SERIES_R2004.pdf
SMCJ8.0CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8V 13.6V DO214AB
Produkt ist nicht verfügbar
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SMCJ8.0CAHR7G SMCJ SERIES_R2004.pdf
SMCJ8.0CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8V 13.6V DO214AB
Produkt ist nicht verfügbar
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SMCJ8.0CA M6G SMCJ SERIES_R2004.pdf
SMCJ8.0CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8V 13.6V DO214AB
Produkt ist nicht verfügbar
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SMBJ8.0A M4G SMBJ SERIES_Q2004.pdf
SMBJ8.0A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
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SMBJ8.0AHM4G SMBJ SERIES_Q2004.pdf
SMBJ8.0AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
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SMBJ8.0A R5G SMBJ SERIES_Q2004.pdf
SMBJ8.0A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
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SMBJ8.0AHR5G SMBJ SERIES_Q2004.pdf
SMBJ8.0AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AA
Produkt ist nicht verfügbar
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1SMA4757 M2G 1SMA4737%20SERIES_O15.pdf
1SMA4757 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1.25W DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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1N5221B A0G 1N5221B%20SERIES_G1804.pdf
1N5221B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
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BZT55B4V7 L1G BZT55B2V4%20SERIES_I2301.pdf
BZT55B4V7 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT55B4V7 L0G
BZT55B4V7 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SRAF1060 C0G SRAF1020%20SERIES_I2105.pdf
SRAF1060 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A ITO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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SRAF1060HC0G SRAF1020%20SERIES_I2105.pdf
SRAF1060HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A ITO220AC
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
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SR303 R0G SR302%20SERIES_J2105.pdf
SR303 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SR303 A0G SR302%20SERIES_J2105.pdf
SR303 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SR303HR0G SR302%20SERIES_J2105.pdf
SR303HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SR303HA0G SR302%20SERIES_J2105.pdf
SR303HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SR3030PT C0G SR3020PT%20SERIES_H2103.pdf
SR3030PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 30V TO247AD
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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SR3030PTHC0G SR3020PT%20SERIES_H2103.pdf
SR3030PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 30V TO247AD
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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SR303 B0G SR302%20SERIES_J2105.pdf
SR303 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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SR303HB0G SR302%20SERIES_J2105.pdf
SR303HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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SMAJ85HR3G SMAJ%20SERIES_U2102.pdf
SMAJ85HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 151VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 151V
Voltage - Breakdown (Min): 94.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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SMAJ85HR3G SMAJ%20SERIES_U2102.pdf
SMAJ85HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 151VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 151V
Voltage - Breakdown (Min): 94.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SMAJ85CHR3G SMAJ%20SERIES_U2102.pdf
SMAJ85CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 151VC DO214AC
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 151V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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SMAJ85CHR3G SMAJ%20SERIES_U2102.pdf
SMAJ85CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 151VC DO214AC
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 151V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2A
auf Bestellung 3569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
25+0.87 EUR
100+0.65 EUR
500+0.51 EUR
Mindestbestellmenge: 21 Stücke
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SMAJ85CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ85CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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SMAJ85CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ85CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PGSMAJ85CA E3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ85CA E3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PGSMAJ85CA E3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ85CA E3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PGSMAJ85A R3G PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf
PGSMAJ85A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AC
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Produkt ist nicht verfügbar
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SMAJ85AHR3G
SMAJ85AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 85V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TS10KL100 D3G TS10KL60%20SERIES_E15.pdf
TS10KL100 D3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 10A KBJL
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TS10KL100HD3G TS10KL60%20SERIES_E15.pdf
TS10KL100HD3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 10A KBJL
Produkt ist nicht verfügbar
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S4M R7G S4A%20SERIES_J1903.pdf
S4M R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 4A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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S4M R7G S4A%20SERIES_J1903.pdf
S4M R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 4A DO214AB
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
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KBP203G C2 KBP201G-KBP207G%20_E13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A KBP
Produkt ist nicht verfügbar
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KBP203G C2G KBP201G-KBP207G%20_E13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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TST20L150CW C0G TST20L100CW%20SERIES_B14.pdf
TST20L150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 10A TO220AB
auf Bestellung 971 Stücke:
Lieferzeit 10-14 Tag (e)
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P6SMB36CA M4G P6SMB%20SERIES_P2102.pdf
P6SMB36CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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P6SMB36CAHM4G P6SMB%20SERIES_P2102.pdf
P6SMB36CAHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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