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TQM033NB04CR RLG TQM033NB04CR RLG Taiwan Semiconductor Corporation TQM033NB04CR_B2301.pdf Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 7356 Stücke:
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5+3.68 EUR
10+2.37 EUR
100+1.61 EUR
500+1.28 EUR
1000+1.18 EUR
Mindestbestellmenge: 5
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TQM050NB06CR RLG TQM050NB06CR RLG Taiwan Semiconductor Corporation TQM050NB06CR_A2003.pdf Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Qualification: AEC-Q101
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TQM050NB06CR RLG TQM050NB06CR RLG Taiwan Semiconductor Corporation TQM050NB06CR_A2003.pdf Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2542 Stücke:
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4+4.4 EUR
10+2.84 EUR
100+1.95 EUR
500+1.57 EUR
1000+1.44 EUR
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MMSZ5262B RHG MMSZ5262B RHG Taiwan Semiconductor Corporation MMSZ5221B%20series_F1804.pdf Description: DIODE ZENER 51V 500MW SOD123F
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BZD27C15PHRHG BZD27C15PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
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BZD27C15PHMHG BZD27C15PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
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BZD27C15PHMQG BZD27C15PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C15PHMTG BZD27C15PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C15PHRTG BZD27C15PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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BZD27C15PHRQG BZD27C15PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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BZD27C15P RQG BZD27C15P RQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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BZD27C15P M2G BZD27C15P M2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15PHRFG BZD27C15PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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BZD27C15PHRVG BZD27C15PHRVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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BZD27C15P RUG BZD27C15P RUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15PHRUG BZD27C15PHRUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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BZD27C15PHM2G BZD27C15PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C15P RHG BZD27C15P RHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15P MHG BZD27C15P MHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15P MQG BZD27C15P MQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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BZD27C15P MTG BZD27C15P MTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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BZD27C15P RTG BZD27C15P RTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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BZD27C15P RFG BZD27C15P RFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
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TPMR6J S1G TPMR6J S1G Taiwan Semiconductor Corporation TPMR6G%20SERIES_A1512.pdf Description: DIODE GEN PURP 600V 6A TO277A
auf Bestellung 6000 Stücke:
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TPMR6J S1G TPMR6J S1G Taiwan Semiconductor Corporation TPMR6G%20SERIES_A1512.pdf Description: DIODE GEN PURP 600V 6A TO277A
auf Bestellung 7405 Stücke:
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P6SMB39CA M4G P6SMB39CA M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
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P6SMB39CAHM4G P6SMB39CAHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
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P6SMB39CAHR5G P6SMB39CAHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S15DLWHRVG S15DLWHRVG Taiwan Semiconductor Corporation S15DLW%20SERIES_A1610.pdf Description: DIODE GEN PURP 200V 1.5A SOD123W
auf Bestellung 6000 Stücke:
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S15DLWHRVG S15DLWHRVG Taiwan Semiconductor Corporation S15DLW%20SERIES_A1610.pdf Description: DIODE GEN PURP 200V 1.5A SOD123W
auf Bestellung 10079 Stücke:
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GBPC1508W T0G GBPC1508W T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1P 800V 15A GBPC-W
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BZT52C7V5S RRG BZT52C7V5S RRG Taiwan Semiconductor Corporation pdf.php?pn=BZT52C7V5S Description: DIODE ZENER 7.5V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
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BZT52C75S RRG BZT52C75S RRG Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_I1804.pdf Description: DIODE ZENER 75V 200MW SOD323F
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BZT52C75K RKG BZT52C75K RKG Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_F1806.pdf Description: DIODE ZENER 75V 200MW SOD523F
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HT11G R0G Taiwan Semiconductor Corporation HT11G%20SERIES_G15.pdf Description: DIODE GEN PURP 50V 1A TS-1
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SK39A M2G SK39A M2G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39AHM2G SK39AHM2G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39A R3G SK39A R3G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39AHR3G SK39AHR3G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39B M4G SK39B M4G Taiwan Semiconductor Corporation SK32B%20SERIES_P2212.pdf Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SK39B R5G SK39B R5G Taiwan Semiconductor Corporation SK32B%20SERIES_P2212.pdf Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39BHM4G SK39BHM4G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39BHR5G SK39BHR5G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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BZT52C39S RRG BZT52C39S RRG Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_J2212.pdf Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39S RRG BZT52C39S RRG Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_J2212.pdf Description: DIODE ZENER 39V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
40+0.44 EUR
Mindestbestellmenge: 30
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BZT52C39-G RHG BZT52C39-G RHG Taiwan Semiconductor Corporation BZT52C2V4-G%20series_B1601.pdf Description: DIODE ZENER 39V 350MW SOD123
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BZT52C39 RHG BZT52C39 RHG Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 39V 500MW SOD123F
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TST40L45CW C0G TST40L45CW C0G Taiwan Semiconductor Corporation TST40L45CW%20SERIES_B15.pdf Description: DIODE SCHOTTKY 45V 20A TO220AB
auf Bestellung 728 Stücke:
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LSR104 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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LSR104-J0 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 1A MELF
Produkt ist nicht verfügbar
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TSM2N7002KCU TSM2N7002KCU Taiwan Semiconductor Corporation TSM2N7002KCU_A2007.pdf Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Produkt ist nicht verfügbar
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TSM2N7002KCU TSM2N7002KCU Taiwan Semiconductor Corporation TSM2N7002KCU_A2007.pdf Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Produkt ist nicht verfügbar
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SRS1620 MNG SRS1620 MNG Taiwan Semiconductor Corporation SRS1620%20SERIES_L2103.pdf Description: DIODE ARRAY SCHOTTKY 20V TO263AB
Produkt ist nicht verfügbar
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SRS1620HMNG SRS1620HMNG Taiwan Semiconductor Corporation SRS1620%20SERIES_L2103.pdf Description: DIODE ARRAY SCHOTTKY 20V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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UF1K A0G UF1K A0G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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MBRS2535CT MNG MBRS2535CT MNG Taiwan Semiconductor Corporation MBRS2535CT%20SERIES_M15.pdf Description: DIODE ARRAY SCHOTTKY 35V TO263AB
Produkt ist nicht verfügbar
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P6SMB160CA M4G P6SMB160CA M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
Produkt ist nicht verfügbar
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P6SMB160CAHM4G P6SMB160CAHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
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P6SMB160CA R5G P6SMB160CA R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
Produkt ist nicht verfügbar
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P6SMB160CAHR5G P6SMB160CAHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
Produkt ist nicht verfügbar
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TQM033NB04CR RLG TQM033NB04CR_B2301.pdf
TQM033NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 7356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+2.37 EUR
100+1.61 EUR
500+1.28 EUR
1000+1.18 EUR
Mindestbestellmenge: 5
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TQM050NB06CR RLG TQM050NB06CR_A2003.pdf
TQM050NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TQM050NB06CR RLG TQM050NB06CR_A2003.pdf
TQM050NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
10+2.84 EUR
100+1.95 EUR
500+1.57 EUR
1000+1.44 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5262B RHG MMSZ5221B%20series_F1804.pdf
MMSZ5262B RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW SOD123F
Produkt ist nicht verfügbar
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BZD27C15PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C15PHMHG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C15PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C15PHMTG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C15PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C15PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C15P RQG BZD27C%20SERIES_AB2103.pdf
BZD27C15P RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C15P M2G BZD27C%20SERIES_AB2103.pdf
BZD27C15P M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15PHRFG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHRFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C15PHRVG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C15P RUG BZD27C%20SERIES_AB2103.pdf
BZD27C15P RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15PHRUG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHRUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C15PHM2G BZD27C%20SERIES_AB2103.pdf
BZD27C15PHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C15P RHG BZD27C%20SERIES_AB2103.pdf
BZD27C15P RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15P MHG BZD27C%20SERIES_AB2103.pdf
BZD27C15P MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15P MQG BZD27C%20SERIES_AB2103.pdf
BZD27C15P MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C15P MTG BZD27C%20SERIES_AB2103.pdf
BZD27C15P MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C15P RTG BZD27C%20SERIES_AB2103.pdf
BZD27C15P RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C15P RFG BZD27C%20SERIES_AB2103.pdf
BZD27C15P RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
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TPMR6J S1G TPMR6G%20SERIES_A1512.pdf
TPMR6J S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A TO277A
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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TPMR6J S1G TPMR6G%20SERIES_A1512.pdf
TPMR6J S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A TO277A
auf Bestellung 7405 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB39CA M4G P6SMB%20SERIES_P2102.pdf
P6SMB39CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
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P6SMB39CAHM4G P6SMB%20SERIES_P2102.pdf
P6SMB39CAHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
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P6SMB39CAHR5G P6SMB%20SERIES_Q2209.pdf
P6SMB39CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S15DLWHRVG S15DLW%20SERIES_A1610.pdf
S15DLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A SOD123W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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S15DLWHRVG S15DLW%20SERIES_A1610.pdf
S15DLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A SOD123W
auf Bestellung 10079 Stücke:
Lieferzeit 10-14 Tag (e)
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GBPC1508W T0G GBPC%2015005%20SERIES_K14.pdf
GBPC1508W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 15A GBPC-W
Produkt ist nicht verfügbar
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BZT52C7V5S RRG pdf.php?pn=BZT52C7V5S
BZT52C7V5S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Produkt ist nicht verfügbar
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BZT52C75S RRG BZT52C2V4S%20SERIES_I1804.pdf
BZT52C75S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD323F
Produkt ist nicht verfügbar
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BZT52C75K RKG BZT52C2V7K%20SERIES_F1806.pdf
BZT52C75K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD523F
Produkt ist nicht verfügbar
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HT11G R0G HT11G%20SERIES_G15.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A TS-1
Produkt ist nicht verfügbar
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SK39A M2G SK32A%20SERIES_V2102.pdf
SK39A M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39AHM2G SK32A%20SERIES_V2102.pdf
SK39AHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39A R3G SK32A%20SERIES_V2102.pdf
SK39A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39AHR3G SK32A%20SERIES_V2102.pdf
SK39AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39B M4G SK32B%20SERIES_P2212.pdf
SK39B M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39B R5G SK32B%20SERIES_P2212.pdf
SK39B R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39BHM4G SK32BH%20SERIES_B2212.pdf
SK39BHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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SK39BHR5G SK32BH%20SERIES_B2212.pdf
SK39BHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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BZT52C39S RRG BZT52C2V4S%20SERIES_J2212.pdf
BZT52C39S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZT52C39S RRG BZT52C2V4S%20SERIES_J2212.pdf
BZT52C39S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
40+0.44 EUR
Mindestbestellmenge: 30
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BZT52C39-G RHG BZT52C2V4-G%20series_B1601.pdf
BZT52C39-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 350MW SOD123
Produkt ist nicht verfügbar
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BZT52C39 RHG BZT52C2V4%20SERIES_G1804.pdf
BZT52C39 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW SOD123F
Produkt ist nicht verfügbar
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TST40L45CW C0G TST40L45CW%20SERIES_B15.pdf
TST40L45CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 20A TO220AB
auf Bestellung 728 Stücke:
Lieferzeit 10-14 Tag (e)
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LSR104 L0
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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LSR104-J0 L0
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
Produkt ist nicht verfügbar
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TSM2N7002KCU TSM2N7002KCU_A2007.pdf
TSM2N7002KCU
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Produkt ist nicht verfügbar
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TSM2N7002KCU TSM2N7002KCU_A2007.pdf
TSM2N7002KCU
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Produkt ist nicht verfügbar
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SRS1620 MNG SRS1620%20SERIES_L2103.pdf
SRS1620 MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 20V TO263AB
Produkt ist nicht verfügbar
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SRS1620HMNG SRS1620%20SERIES_L2103.pdf
SRS1620HMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 20V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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UF1K A0G UF1A%20SERIES_G2104.pdf
UF1K A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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MBRS2535CT MNG MBRS2535CT%20SERIES_M15.pdf
MBRS2535CT MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 35V TO263AB
Produkt ist nicht verfügbar
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P6SMB160CA M4G P6SMB%20SERIES_P2102.pdf
P6SMB160CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Produkt ist nicht verfügbar
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P6SMB160CAHM4G P6SMB%20SERIES_P2102.pdf
P6SMB160CAHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Produkt ist nicht verfügbar
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P6SMB160CA R5G P6SMB%20SERIES_P2102.pdf
P6SMB160CA R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Produkt ist nicht verfügbar
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P6SMB160CAHR5G P6SMB%20SERIES_P2102.pdf
P6SMB160CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Produkt ist nicht verfügbar
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