Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (22680) > Seite 175 nach 378
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SMBJ64A R5G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64V 103V DO214AA |
Produkt ist nicht verfügbar |
||||||||||||
SMBJ64A R5G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64V 103V DO214AA |
Produkt ist nicht verfügbar |
||||||||||||
SMBJ64AHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64V 103V DO214AA |
Produkt ist nicht verfügbar |
||||||||||||
SMBJ64AHR5G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64V 103V DO214AA |
Produkt ist nicht verfügbar |
||||||||||||
MBRF1090CTHC0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 90V ITO220AB |
Produkt ist nicht verfügbar |
||||||||||||
MBRF1090HC0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 90V 10A ITO220AC |
Produkt ist nicht verfügbar |
||||||||||||
SRF1090 C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 90V ITO220AB |
Produkt ist nicht verfügbar |
||||||||||||
SRF1090HC0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 90V ITO220AB |
Produkt ist nicht verfügbar |
||||||||||||
SR1204 A0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 40V 12A DO201AD |
Produkt ist nicht verfügbar |
||||||||||||
TSM110NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 10A/48A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
TSM110NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 10A/48A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 14882 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
TSM110NB04LDCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 10A/48A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
TSM110NB04LDCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 10A/48A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 4235 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
TSM110NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 12A/54A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V |
Produkt ist nicht verfügbar |
||||||||||||
TSM110NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 12A/54A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
TSM110NB04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 12A/54A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V |
auf Bestellung 22500 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
TSM110NB04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 12A/54A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V |
auf Bestellung 23905 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
1.5SMC68A V6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 58.1V 92V DO214AB |
Produkt ist nicht verfügbar |
||||||||||||
1.5SMC68A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1VWM 92VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
||||||||||||
1.5SMC68A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1VWM 92VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
||||||||||||
1.5SMC68AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1VWM 92VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
||||||||||||
1.5SMC68A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1VWM 92VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
||||||||||||
1.5SMC68AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1VWM 92VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
||||||||||||
TQM033NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 21A/121A PDFN56U Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
TQM033NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 21A/121A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 9269 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
TQM050NB06CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/104A PDFN56U Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||||||||||||
TQM050NB06CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/104A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2949 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
MMSZ5262B RHG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 51V 500MW SOD123F |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHRHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Tolerance: ±6.12% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Grade: Automotive Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHMHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Tolerance: ±6.12% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Grade: Automotive Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHMQG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHMTG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHRTG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHRQG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15P RQG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15P M2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Tolerance: ±6.12% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHRFG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHRVG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15P RUG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Tolerance: ±6.12% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHRUG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15PHM2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.12% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Grade: Automotive Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15P RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.12% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15P MHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.12% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15P MQG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15P MTG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15P RTG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
BZD27C15P RFG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.7V 1W SUB SMA |
Produkt ist nicht verfügbar |
||||||||||||
TPMR6J S1G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 6A TO277A |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
TPMR6J S1G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 6A TO277A |
auf Bestellung 7405 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
P6SMB39CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 33.3VWM 53.9VC DO214AA |
Produkt ist nicht verfügbar |
||||||||||||
P6SMB39CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 33.3VWM 53.9VC DO214AA |
Produkt ist nicht verfügbar |
||||||||||||
P6SMB39CAHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
||||||||||||
S15DLWHRVG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 1.5A SOD123W |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
S15DLWHRVG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 1.5A SOD123W |
auf Bestellung 10079 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
GBPC1508W T0G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1P 800V 15A GBPC-W |
Produkt ist nicht verfügbar |
||||||||||||
BZT52C7V5S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 900 nA @ 5 V |
Produkt ist nicht verfügbar |
||||||||||||
BZT52C75S RRG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 75V 200MW SOD323F |
Produkt ist nicht verfügbar |
||||||||||||
BZT52C75K RKG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 75V 200MW SOD523F |
Produkt ist nicht verfügbar |
||||||||||||
HT11G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 50V 1A TS-1 |
Produkt ist nicht verfügbar |
||||||||||||
SK39A M2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
Produkt ist nicht verfügbar |
SMBJ64A R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64A R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
SMBJ64AHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
MBRF1090CTHC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Produkt ist nicht verfügbar
MBRF1090HC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A ITO220AC
Description: DIODE SCHOTTKY 90V 10A ITO220AC
Produkt ist nicht verfügbar
SRF1090 C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Produkt ist nicht verfügbar
SRF1090HC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Produkt ist nicht verfügbar
SR1204 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Description: DIODE SCHOTTKY 40V 12A DO201AD
Produkt ist nicht verfügbar
TSM110NB04DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.18 EUR |
5000+ | 1.13 EUR |
12500+ | 1.07 EUR |
TSM110NB04DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 14882 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.86 EUR |
12+ | 2.34 EUR |
100+ | 1.82 EUR |
500+ | 1.54 EUR |
1000+ | 1.26 EUR |
TSM110NB04LDCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.18 EUR |
TSM110NB04LDCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 4235 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.86 EUR |
12+ | 2.34 EUR |
100+ | 1.82 EUR |
500+ | 1.54 EUR |
1000+ | 1.26 EUR |
TSM110NB04CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Produkt ist nicht verfügbar
TSM110NB04CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.92 EUR |
16+ | 1.66 EUR |
100+ | 1.15 EUR |
500+ | 0.96 EUR |
1000+ | 0.82 EUR |
TSM110NB04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
auf Bestellung 22500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.73 EUR |
5000+ | 0.69 EUR |
12500+ | 0.64 EUR |
TSM110NB04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
auf Bestellung 23905 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.92 EUR |
16+ | 1.66 EUR |
100+ | 1.15 EUR |
500+ | 0.96 EUR |
1000+ | 0.82 EUR |
1.5SMC68A V6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Description: TVS DIODE 58.1V 92V DO214AB
Produkt ist nicht verfügbar
1.5SMC68A V7G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68A R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68AHR7G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68A M6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68AHM6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
TQM033NB04CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.59 EUR |
5000+ | 1.51 EUR |
TQM033NB04CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9269 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.85 EUR |
10+ | 3.14 EUR |
100+ | 2.44 EUR |
500+ | 2.07 EUR |
1000+ | 1.69 EUR |
TQM050NB06CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TQM050NB06CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2949 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.37 EUR |
10+ | 3.63 EUR |
100+ | 2.89 EUR |
500+ | 2.45 EUR |
1000+ | 2.08 EUR |
MMSZ5262B RHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW SOD123F
Description: DIODE ZENER 51V 500MW SOD123F
Produkt ist nicht verfügbar
BZD27C15PHRHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C15PHMHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C15PHMQG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15PHMTG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15PHRTG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15PHRQG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15P RQG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15P M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
BZD27C15PHRFG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15PHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15P RUG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
BZD27C15PHRUG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15PHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C15P RHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
BZD27C15P MHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
BZD27C15P MQG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15P MTG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15P RTG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C15P RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
Produkt ist nicht verfügbar
TPMR6J S1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A TO277A
Description: DIODE GEN PURP 600V 6A TO277A
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)TPMR6J S1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A TO277A
Description: DIODE GEN PURP 600V 6A TO277A
auf Bestellung 7405 Stücke:
Lieferzeit 21-28 Tag (e)P6SMB39CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
P6SMB39CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Produkt ist nicht verfügbar
P6SMB39CAHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
S15DLWHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A SOD123W
Description: DIODE GEN PURP 200V 1.5A SOD123W
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)S15DLWHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A SOD123W
Description: DIODE GEN PURP 200V 1.5A SOD123W
auf Bestellung 10079 Stücke:
Lieferzeit 21-28 Tag (e)GBPC1508W T0G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 15A GBPC-W
Description: BRIDGE RECT 1P 800V 15A GBPC-W
Produkt ist nicht verfügbar
BZT52C7V5S RRG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Description: DIODE ZENER 7.5V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Produkt ist nicht verfügbar
BZT52C75S RRG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD323F
Description: DIODE ZENER 75V 200MW SOD323F
Produkt ist nicht verfügbar
BZT52C75K RKG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD523F
Description: DIODE ZENER 75V 200MW SOD523F
Produkt ist nicht verfügbar
HT11G R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A TS-1
Description: DIODE GEN PURP 50V 1A TS-1
Produkt ist nicht verfügbar
SK39A M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar