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BZW04-5V8B R1G BZW04-5V8B R1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BZW04-5V8BHR1G BZW04-5V8BHR1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZW04-5V8HR1G BZW04-5V8HR1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
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BZW04-5V8 A0G BZW04-5V8 A0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
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BZW04-5V8B A0G BZW04-5V8B A0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BZW04-5V8BHA0G BZW04-5V8BHA0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZW04-5V8HA0G BZW04-5V8HA0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
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BZW04-5V8 B0G BZW04-5V8 B0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BZW04-5V8B B0G BZW04-5V8B B0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BZW04-5V8BHB0G BZW04-5V8BHB0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZW04-5V8HB0G BZW04-5V8HB0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
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TSM6866SDCA RVG TSM6866SDCA RVG Taiwan Semiconductor Corporation TSM6866SD_C15.pdf Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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TSM6866SDCA RVG TSM6866SDCA RVG Taiwan Semiconductor Corporation TSM6866SD_C15.pdf Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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SRAS20150 MNG SRAS20150 MNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_L15.pdf Description: DIODE SCHOTTKY 150V 20A TO263AB
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SRAS20150HMNG SRAS20150HMNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_L15.pdf Description: DIODE SCHOTTKY 150V 20A TO263AB
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RS3KB-T R5G RS3KB-T R5G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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RS3KB-T R5G RS3KB-T R5G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1984 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+0.58 EUR
100+0.35 EUR
Mindestbestellmenge: 24
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S3KB M4G S3KB M4G Taiwan Semiconductor Corporation S3AB%20SERIES_L1705.pdf Description: DIODE GEN PURP 800V 3A DO214AA
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S3KBHM4G S3KBHM4G Taiwan Semiconductor Corporation S3AB%20SERIES_L1705.pdf Description: DIODE GEN PURP 800V 3A DO214AA
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HS3KB M4G HS3KB M4G Taiwan Semiconductor Corporation HS3AB%20SERIES_K1701.pdf Description: DIODE GEN PURP 800V 3A DO214AA
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S3KBHR5G S3KBHR5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE GEN PURP 800V 3A DO214AA
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RS3JB-T R5G RS3JB-T R5G Taiwan Semiconductor Corporation RS3DB-T SERIES_C2102.pdf Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS3JB-T R5G RS3JB-T R5G Taiwan Semiconductor Corporation RS3DB-T SERIES_C2102.pdf Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
29+0.63 EUR
100+0.4 EUR
Mindestbestellmenge: 18
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RS3J V7G RS3J V7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RS3J R7G RS3J R7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RS3J M6G RS3J M6G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RS3J V6G RS3J V6G Taiwan Semiconductor Corporation RS3A%20SERIES_J1708.pdf Description: DIODE GEN PURP 600V 3A DO214AB
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RS3JHM6G RS3JHM6G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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RS3JHR7G RS3JHR7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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TSZU52C5V1 RGG TSZU52C5V1 RGG Taiwan Semiconductor Corporation TSZU52C2V0 SERIES_G2009.pdf Description: DIODE ZENER 5.1V 150MW 603
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
auf Bestellung 16000 Stücke:
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4000+0.093 EUR
Mindestbestellmenge: 4000
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SA58AHR0G SA58AHR0G Taiwan Semiconductor Corporation SA%20SERIES_K1602.pdf Description: TVS DIODE 58VWM 93.6VC DO204AC
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SA58CAHR0G SA58CAHR0G Taiwan Semiconductor Corporation SA%20SERIES_K1602.pdf Description: TVS DIODE 58VWM 93.6VC DO204AC
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TLD8S10AH TLD8S10AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 388A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TLD5S10AH TLD5S10AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TLD6S10AH TLD6S10AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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YBS2204G RAG YBS2204G RAG Taiwan Semiconductor Corporation YBS2204G%20SERIES_B1703.pdf Description: BRIDGE RECT 1PHASE 400V 2.2A YBS
auf Bestellung 1934 Stücke:
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YBS2206G RAG YBS2206G RAG Taiwan Semiconductor Corporation YBS2204G%20SERIES_B1703.pdf Description: BRIDGE RECT 1PHASE 800V 2.2A YBS
auf Bestellung 2884 Stücke:
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YBS2207G RAG YBS2207G RAG Taiwan Semiconductor Corporation YBS2204G%20SERIES_B1703.pdf Description: BRIDGE RECT 1PHASE 1KV 2.2A YBS
auf Bestellung 1918 Stücke:
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ZM4738A L0G Taiwan Semiconductor Corporation ZM4728A%20SERIES_D1804.pdf Description: DIODE ZENER 8.2V 1W MELF
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ZM4741A L0G ZM4741A L0G Taiwan Semiconductor Corporation ZM4728A%20SERIES_D1804.pdf Description: DIODE ZENER 11V 1W MELF
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YBS2205G RAG YBS2205G RAG Taiwan Semiconductor Corporation YBS2204G%20SERIES_B1703.pdf Description: BRIDGE RECT 1PHASE 600V 2.2A YBS
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SR4050PT C0G SR4050PT C0G Taiwan Semiconductor Corporation SR4020PT%20SERIES_G13.pdf Description: DIODE ARRAY SCHOTTKY 50V TO247AD
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SR4050PTHC0G SR4050PTHC0G Taiwan Semiconductor Corporation SR4020PT%20SERIES_G13.pdf Description: DIODE ARRAY SCHOTTKY 50V TO247AD
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SMDJ45A M6G SMDJ45A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMDJ45AHM6G SMDJ45AHM6G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMDJ45A R7G SMDJ45A R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMDJ45AHR7G SMDJ45AHR7G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
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MBRS6040CT MNG MBRS6040CT MNG Taiwan Semiconductor Corporation MBRS6040CT_G2103.pdf Description: DIODE SCHOTTKY 40V 60A TO263AB
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MBRS6040CT MNG MBRS6040CT MNG Taiwan Semiconductor Corporation MBRS6040CT_G2103.pdf Description: DIODE SCHOTTKY 40V 60A TO263AB
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TS10P06G D2G TS10P06G D2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_J15.pdf Description: BRIDGE RECT 1P 800V 10A TS-6P
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TS10P06G C2G TS10P06G C2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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TS10P06GHC2G TS10P06GHC2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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TS10P06GHD2G TS10P06GHD2G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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1.5SMC30CA V7G 1.5SMC30CA V7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC30CA V7G 1.5SMC30CA V7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 11 Stücke:
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7+2.64 EUR
10+1.78 EUR
Mindestbestellmenge: 7
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SMCJ70A V7G SMCJ70A V7G Taiwan Semiconductor Corporation SMCJ100A Description: TVS DIODE 70VWM 113VC DO214AB
auf Bestellung 1640 Stücke:
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P6SMB160AHM4G P6SMB160AHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
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TSM4ND60CI C0G TSM4ND60CI C0G Taiwan Semiconductor Corporation TSM4ND60CI_A1804.pdf Description: MOSFET N-CH 600V 4A ITO220
auf Bestellung 464 Stücke:
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P4SMA6.8A M2G P4SMA6.8A M2G Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 5.8VWM 10.5VC DO214AC
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P4SMA6.8AHM2G P4SMA6.8AHM2G Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 5.8VWM 10.5VC DO214AC
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BZW04-5V8B R1G BZW04%20SERIES_J2104.pdf
BZW04-5V8B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BZW04-5V8BHR1G BZW04%20SERIES_J2104.pdf
BZW04-5V8BHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZW04-5V8HR1G BZW04%20SERIES_J2104.pdf
BZW04-5V8HR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
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BZW04-5V8 A0G BZW04%20SERIES_J2104.pdf
BZW04-5V8 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
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BZW04-5V8B A0G BZW04%20SERIES_J2104.pdf
BZW04-5V8B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BZW04-5V8BHA0G BZW04%20SERIES_J2104.pdf
BZW04-5V8BHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZW04-5V8HA0G BZW04%20SERIES_J2104.pdf
BZW04-5V8HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
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BZW04-5V8 B0G BZW04%20SERIES_J2104.pdf
BZW04-5V8 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BZW04-5V8B B0G BZW04%20SERIES_J2104.pdf
BZW04-5V8B B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BZW04-5V8BHB0G BZW04%20SERIES_J2104.pdf
BZW04-5V8BHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZW04-5V8HB0G BZW04%20SERIES_J2104.pdf
BZW04-5V8HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
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TSM6866SDCA RVG TSM6866SD_C15.pdf
TSM6866SDCA RVG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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TSM6866SDCA RVG TSM6866SD_C15.pdf
TSM6866SDCA RVG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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SRAS20150 MNG SRAS2020%20SERIES_L15.pdf
SRAS20150 MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 20A TO263AB
Produkt ist nicht verfügbar
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SRAS20150HMNG SRAS2020%20SERIES_L15.pdf
SRAS20150HMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 20A TO263AB
Produkt ist nicht verfügbar
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RS3KB-T R5G
RS3KB-T R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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RS3KB-T R5G
RS3KB-T R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.58 EUR
100+0.35 EUR
Mindestbestellmenge: 24
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S3KB M4G S3AB%20SERIES_L1705.pdf
S3KB M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
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S3KBHM4G S3AB%20SERIES_L1705.pdf
S3KBHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
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HS3KB M4G HS3AB%20SERIES_K1701.pdf
HS3KB M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
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S3KBHR5G S3AB%20SERIES_M2102.pdf
S3KBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
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RS3JB-T R5G RS3DB-T SERIES_C2102.pdf
RS3JB-T R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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RS3JB-T R5G RS3DB-T SERIES_C2102.pdf
RS3JB-T R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
29+0.63 EUR
100+0.4 EUR
Mindestbestellmenge: 18
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RS3J V7G RS3A%20SERIES_L2102.pdf
RS3J V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RS3J R7G RS3A%20SERIES_L2102.pdf
RS3J R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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RS3J M6G RS3A%20SERIES_L2102.pdf
RS3J M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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RS3J V6G RS3A%20SERIES_J1708.pdf
RS3J V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Produkt ist nicht verfügbar
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RS3JHM6G RS3A%20SERIES_L2102.pdf
RS3JHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RS3JHR7G RS3A%20SERIES_L2102.pdf
RS3JHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSZU52C5V1 RGG TSZU52C2V0 SERIES_G2009.pdf
TSZU52C5V1 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW 603
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.093 EUR
Mindestbestellmenge: 4000
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SA58AHR0G SA%20SERIES_K1602.pdf
SA58AHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO204AC
Produkt ist nicht verfügbar
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SA58CAHR0G SA%20SERIES_K1602.pdf
SA58CAHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO204AC
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TLD8S10AH TLD8S10AH SERIES_E2310.pdf
TLD8S10AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 388A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLD5S10AH TLD5S10AH SERIES_D2103.pdf
TLD5S10AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLD6S10AH TLD6S10AH SERIES_D2103.pdf
TLD6S10AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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YBS2204G RAG YBS2204G%20SERIES_B1703.pdf
YBS2204G RAG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2.2A YBS
auf Bestellung 1934 Stücke:
Lieferzeit 10-14 Tag (e)
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YBS2206G RAG YBS2204G%20SERIES_B1703.pdf
YBS2206G RAG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2.2A YBS
auf Bestellung 2884 Stücke:
Lieferzeit 10-14 Tag (e)
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YBS2207G RAG YBS2204G%20SERIES_B1703.pdf
YBS2207G RAG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2.2A YBS
auf Bestellung 1918 Stücke:
Lieferzeit 10-14 Tag (e)
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ZM4738A L0G ZM4728A%20SERIES_D1804.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1W MELF
Produkt ist nicht verfügbar
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ZM4741A L0G ZM4728A%20SERIES_D1804.pdf
ZM4741A L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 1W MELF
Produkt ist nicht verfügbar
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YBS2205G RAG YBS2204G%20SERIES_B1703.pdf
YBS2205G RAG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2.2A YBS
Produkt ist nicht verfügbar
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SR4050PT C0G SR4020PT%20SERIES_G13.pdf
SR4050PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
Produkt ist nicht verfügbar
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SR4050PTHC0G SR4020PT%20SERIES_G13.pdf
SR4050PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
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SMDJ45A M6G SMDJ%20SERIES_E1708.pdf
SMDJ45A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Produkt ist nicht verfügbar
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SMDJ45AHM6G SMDJ%20SERIES_E1708.pdf
SMDJ45AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMDJ45A R7G SMDJ%20SERIES_E1708.pdf
SMDJ45A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Produkt ist nicht verfügbar
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SMDJ45AHR7G SMDJ%20SERIES_E1708.pdf
SMDJ45AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Produkt ist nicht verfügbar
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MBRS6040CT MNG MBRS6040CT_G2103.pdf
MBRS6040CT MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 60A TO263AB
Produkt ist nicht verfügbar
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MBRS6040CT MNG MBRS6040CT_G2103.pdf
MBRS6040CT MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 60A TO263AB
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)
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TS10P06G D2G TS10P01G%20SERIES_J15.pdf
TS10P06G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Produkt ist nicht verfügbar
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TS10P06G C2G TS10P01G%20SERIES_L2203.pdf
TS10P06G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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TS10P06GHC2G TS10P01G%20SERIES_L2203.pdf
TS10P06GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS10P06GHD2G TS10P01G%20SERIES_L2203.pdf
TS10P06GHD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC30CA V7G 1.5SMC%20SERIES_S2207.pdf
1.5SMC30CA V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC30CA V7G 1.5SMC%20SERIES_S2207.pdf
1.5SMC30CA V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
10+1.78 EUR
Mindestbestellmenge: 7
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SMCJ70A V7G SMCJ100A
SMCJ70A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
auf Bestellung 1640 Stücke:
Lieferzeit 10-14 Tag (e)
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P6SMB160AHM4G P6SMB%20SERIES_P2102.pdf
P6SMB160AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Produkt ist nicht verfügbar
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TSM4ND60CI C0G TSM4ND60CI_A1804.pdf
TSM4ND60CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A ITO220
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
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P4SMA6.8A M2G P4SMA%20SERIES_S2102.pdf
P4SMA6.8A M2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
Produkt ist nicht verfügbar
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P4SMA6.8AHM2G P4SMA%20SERIES_S2102.pdf
P4SMA6.8AHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
Produkt ist nicht verfügbar
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