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ES1DLHM2G ES1DLHM2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1DLHRQG ES1DLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL RUG ES1DL RUG Taiwan Semiconductor Corporation ES1AL SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHR3G ES1DLHR3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHRUG ES1DLHRUG Taiwan Semiconductor Corporation ES1AL SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DL RHG ES1DL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DLHRHG ES1DLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DL MHG ES1DL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHMHG ES1DLHMHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL MQG ES1DL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DL MTG ES1DL MTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL RTG ES1DL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHMQG ES1DLHMQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DLHMTG ES1DLHMTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DLHRTG ES1DLHRTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL RFG ES1DL RFG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DLHRFG ES1DLHRFG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHRVG ES1DLHRVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
5.0SMDJ54A M6G 5.0SMDJ54A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ54A M6G 5.0SMDJ54A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
auf Bestellung 2850 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ20A M6G 5.0SMDJ20A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ20A M6G 5.0SMDJ20A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ24A M6G 5.0SMDJ24A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 24V 38.9V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ24A M6G 5.0SMDJ24A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 24V 38.9V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ28A M6G 5.0SMDJ28A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ28A M6G 5.0SMDJ28A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 28V 45.4V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ36A M6G 5.0SMDJ36A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 36V 58.1V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ36A M6G 5.0SMDJ36A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 36V 58.1V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ43A M6G 5.0SMDJ43A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 43V 69.4V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ43A M6G 5.0SMDJ43A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 43V 69.4V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ26A M6G 5.0SMDJ26A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 26V 42.1V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ26A M6G 5.0SMDJ26A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 26V 42.1V DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
ES2J R5G ES2J R5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 4250 Stücke:
Lieferzeit 21-28 Tag (e)
850+0.95 EUR
1700+ 0.81 EUR
2550+ 0.72 EUR
Mindestbestellmenge: 850
ES2J R5G ES2J R5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 4780 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.9 EUR
16+ 1.64 EUR
100+ 1.14 EUR
Mindestbestellmenge: 14
ES2JA R3G ES2JA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
1800+0.72 EUR
3600+ 0.64 EUR
5400+ 0.61 EUR
9000+ 0.56 EUR
Mindestbestellmenge: 1800
ES2JA R3G ES2JA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 9180 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.72 EUR
18+ 1.47 EUR
100+ 1.02 EUR
500+ 0.85 EUR
Mindestbestellmenge: 16
ES2JAL M3G ES2JAL M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES2JAL M3G ES2JAL M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 4020 Stücke:
Lieferzeit 21-28 Tag (e)
ES2JFS M3G ES2JFS M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES2JFS M3G ES2JFS M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 6310 Stücke:
Lieferzeit 21-28 Tag (e)
ES2JA M2G ES2JA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
ES2JAHM2G ES2JAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
ES2JAHR3G ES2JAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES2J M4G ES2J M4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
ES2JHM4G ES2JHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
ES2JHR5G ES2JHR5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TS78L05CT A3G TS78L05CT A3G Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 5V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TS78L05CT A3G TS78L05CT A3G Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 5V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TS78L05CT B0G Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
S8JCH S8JCH Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.58 EUR
6000+ 0.54 EUR
Mindestbestellmenge: 3000
S8JCH S8JCH Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 11921 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.74 EUR
17+ 1.54 EUR
100+ 1.18 EUR
500+ 0.93 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 15
S8JC V7G S8JC V7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 850 Stücke:
Lieferzeit 21-28 Tag (e)
850+1.46 EUR
Mindestbestellmenge: 850
S8JC V7G S8JC V7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 1157 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.52 EUR
12+ 2.26 EUR
100+ 1.76 EUR
Mindestbestellmenge: 11
S8JC R7G S8JC R7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 86 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.69 EUR
18+ 1.45 EUR
Mindestbestellmenge: 16
S8JC M6G S8JC M6G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
S8JC V6G S8JC V6G Taiwan Semiconductor Corporation S8GC%20SERIES_F2102.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
S8JCHM6G S8JCHM6G Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
TSM60NB099CZ C0G TSM60NB099CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Produkt ist nicht verfügbar
TSM60NB099PW C1G TSM60NB099PW C1G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
auf Bestellung 97 Stücke:
Lieferzeit 21-28 Tag (e)
2+20.1 EUR
25+ 16.05 EUR
Mindestbestellmenge: 2
SMBJ64A M4G SMBJ64A M4G Taiwan Semiconductor Corporation SMBJ SERIES_Q2004.pdf Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
ES1DLHM2G ES1AL%20SERIES_L2103.pdf
ES1DLHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1DLHRQG ES1AL%20SERIES_L2103.pdf
ES1DLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL RUG ES1AL SERIES_L2103.pdf
ES1DL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHR3G ES1AL%20SERIES_L2103.pdf
ES1DLHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHRUG ES1AL SERIES_L2103.pdf
ES1DLHRUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DL RHG ES1AL%20SERIES_L2103.pdf
ES1DL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DLHRHG ES1AL%20SERIES_L2103.pdf
ES1DLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DL MHG ES1AL%20SERIES_L2103.pdf
ES1DL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHMHG ES1AL%20SERIES_L2103.pdf
ES1DLHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL MQG ES1AL%20SERIES_L2103.pdf
ES1DL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DL MTG ES1AL%20SERIES_L2103.pdf
ES1DL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL RTG ES1AL%20SERIES_L2103.pdf
ES1DL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHMQG ES1AL%20SERIES_L2103.pdf
ES1DLHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DLHMTG ES1AL%20SERIES_L2103.pdf
ES1DLHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DLHRTG ES1AL%20SERIES_L2103.pdf
ES1DLHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL RFG ES1AL%20SERIES_L2103.pdf
ES1DL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DLHRFG ES1AL%20SERIES_L2103.pdf
ES1DLHRFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1DLHRVG ES1AL%20SERIES_L2103.pdf
ES1DLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Produkt ist nicht verfügbar
5.0SMDJ54A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ54A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ54A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ54A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
auf Bestellung 2850 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ20A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ20A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ20A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ20A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ24A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ24A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ24A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ24A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ28A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ28A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ28A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ28A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ36A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ36A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ36A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ36A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ43A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ43A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ43A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ43A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
5.0SMDJ26A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ26A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Produkt ist nicht verfügbar
5.0SMDJ26A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ26A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
ES2J R5G ES2A%20SERIES_L2102.pdf
ES2J R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 4250 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
850+0.95 EUR
1700+ 0.81 EUR
2550+ 0.72 EUR
Mindestbestellmenge: 850
ES2J R5G ES2A%20SERIES_L2102.pdf
ES2J R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 4780 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.9 EUR
16+ 1.64 EUR
100+ 1.14 EUR
Mindestbestellmenge: 14
ES2JA R3G ES2AA%20SERIES_M2102.pdf
ES2JA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1800+0.72 EUR
3600+ 0.64 EUR
5400+ 0.61 EUR
9000+ 0.56 EUR
Mindestbestellmenge: 1800
ES2JA R3G ES2AA%20SERIES_M2102.pdf
ES2JA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 9180 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.47 EUR
100+ 1.02 EUR
500+ 0.85 EUR
Mindestbestellmenge: 16
ES2JAL M3G
ES2JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES2JAL M3G
ES2JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 4020 Stücke:
Lieferzeit 21-28 Tag (e)
ES2JFS M3G
ES2JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES2JFS M3G
ES2JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
auf Bestellung 6310 Stücke:
Lieferzeit 21-28 Tag (e)
ES2JA M2G ES2AA%20SERIES_M2102.pdf
ES2JA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
ES2JAHM2G ES2AA%20SERIES_M2102.pdf
ES2JAHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Produkt ist nicht verfügbar
ES2JAHR3G ES2AA%20SERIES_M2102.pdf
ES2JAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES2J M4G ES2A%20SERIES_L2102.pdf
ES2J M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
ES2JHM4G ES2A%20SERIES_L2102.pdf
ES2JHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
ES2JHR5G ES2A%20SERIES_L2102.pdf
ES2JHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TS78L05CT A3G TS78L00_M2206.pdf
TS78L05CT A3G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TS78L05CT A3G TS78L00_M2206.pdf
TS78L05CT A3G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TS78L05CT B0G TS78L00_M2206.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
S8JCH S8GCH%20SERIES_B2210.pdf
S8JCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.58 EUR
6000+ 0.54 EUR
Mindestbestellmenge: 3000
S8JCH S8GCH%20SERIES_B2210.pdf
S8JCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 11921 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.74 EUR
17+ 1.54 EUR
100+ 1.18 EUR
500+ 0.93 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 15
S8JC V7G S8GC%20SERIES_G2210.pdf
S8JC V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 850 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
850+1.46 EUR
Mindestbestellmenge: 850
S8JC V7G S8GC%20SERIES_G2210.pdf
S8JC V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 1157 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.52 EUR
12+ 2.26 EUR
100+ 1.76 EUR
Mindestbestellmenge: 11
S8JC R7G S8GC%20SERIES_G2210.pdf
S8JC R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
auf Bestellung 86 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.69 EUR
18+ 1.45 EUR
Mindestbestellmenge: 16
S8JC M6G S8GC%20SERIES_G2210.pdf
S8JC M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
S8JC V6G S8GC%20SERIES_F2102.pdf
S8JC V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
S8JCHM6G S8GCH%20SERIES_B2210.pdf
S8JCHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Produkt ist nicht verfügbar
TSM60NB099CZ C0G
TSM60NB099CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Produkt ist nicht verfügbar
TSM60NB099PW C1G
TSM60NB099PW C1G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
auf Bestellung 97 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+20.1 EUR
25+ 16.05 EUR
Mindestbestellmenge: 2
SMBJ64A M4G SMBJ SERIES_Q2004.pdf
SMBJ64A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Produkt ist nicht verfügbar
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