Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25183) > Seite 229 nach 420
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TS40P07G | Taiwan Semiconductor Corporation |
 Description: BRIDGE RECT 1PHASE 1KV 40A TS-6PPackaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 726 Stücke: Lieferzeit 10-14 Tag (e) |
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TS35P07G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 35A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
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TS25P07G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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TS15P07G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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TS6P07G | Taiwan Semiconductor Corporation | Description: DIODE BRIDGE 6A 1000V TS-6P |
Produkt ist nicht verfügbar |
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F1T7G A1G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T7G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T7GHA1G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T7GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T7G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A TS1 Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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F1T7GH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A TS1 Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HT18G A1G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A TS-1 Packaging: Tape & Box (TB) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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HT18G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A TS1 Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HT18G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A TS-1 Packaging: Tape & Box (TB) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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TS25P07GH | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Grade: Automotive Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 1182 Stücke: Lieferzeit 10-14 Tag (e) |
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TS50P07GH | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Grade: Automotive Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 1177 Stücke: Lieferzeit 10-14 Tag (e) |
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TS15P07G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P |
Produkt ist nicht verfügbar |
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TS6P07GHC2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P |
Produkt ist nicht verfügbar |
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TS8P07G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 8A TS-6P |
Produkt ist nicht verfügbar |
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TS6P07G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P |
Produkt ist nicht verfügbar |
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TS6P07G D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P |
Produkt ist nicht verfügbar |
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TS50P07G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P |
Produkt ist nicht verfügbar |
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TS15P07G-K D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P |
Produkt ist nicht verfügbar |
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1T7G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A TS1 Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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TS10P07G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 10A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 1178 Stücke: Lieferzeit 10-14 Tag (e) |
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FR152GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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1.5KE13AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 11.1VWM 18.2VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 86A Voltage - Reverse Standoff (Typ): 11.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BZT52B4V3S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 200MW SOD323F |
Produkt ist nicht verfügbar |
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BZT52B4V3-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 410MW SOD123 |
Produkt ist nicht verfügbar |
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BZT52B4V3 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 500MW SOD123F |
Produkt ist nicht verfügbar |
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SS320LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 3A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS320LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 3A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 29235 Stücke: Lieferzeit 10-14 Tag (e) |
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PGSMAJ18CAHF4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18VWM 29.2VC DO214AC Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 13.7A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SF68G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 6A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 1962 Stücke: Lieferzeit 10-14 Tag (e) |
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SF68GH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 6A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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HER157G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 800V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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HER605G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 6A R6 Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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SMCJ10CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 92A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMCJ10CA V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
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SMCJ10CA R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
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SMCJ10CA V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
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SMCJ10CA M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
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| SMCJ10CA R6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
Produkt ist nicht verfügbar |
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SMCJ10CAHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO214AB |
Produkt ist nicht verfügbar |
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SMAJ78HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 139VC DO214AC |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ78HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 139VC DO214AC |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ78CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 139VC DO214AC |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ78CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 139VC DO214AC |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ78CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AC |
Produkt ist nicht verfügbar |
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SMAJ78CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AC |
auf Bestellung 3484 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ78CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 3.2A Voltage - Reverse Standoff (Typ): 78V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 86.7V Voltage - Clamping (Max) @ Ipp: 126V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMAJ78CA R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AC |
Produkt ist nicht verfügbar |
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UDZS6V2B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 2.7 µA @ 3 V |
Produkt ist nicht verfügbar |
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UDZS13B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 10 V |
Produkt ist nicht verfügbar |
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UDZS18B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 13 V |
Produkt ist nicht verfügbar |
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UDZS36B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 36V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 27 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
UDZS27B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 21 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
UDZS22B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 17 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
UDZS33B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 200MW SOD323F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
UDZS3V9B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.9V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TS40P07G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 726 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.56 EUR |
| 15+ | 2.76 EUR |
| 105+ | 2.03 EUR |
| 510+ | 1.65 EUR |
| TS35P07G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.54 EUR |
| 15+ | 2.26 EUR |
| 105+ | 1.71 EUR |
| TS25P07G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.38 EUR |
| 15+ | 2.64 EUR |
| 105+ | 1.94 EUR |
| 510+ | 1.57 EUR |
| TS15P07G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.78 EUR |
| 15+ | 1.76 EUR |
| 105+ | 1.31 EUR |
| TS6P07G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 6A 1000V TS-6P
Description: DIODE BRIDGE 6A 1000V TS-6P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| F1T7G A1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Description: DIODE GEN PURP 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| F1T7G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Description: DIODE GEN PURP 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| F1T7GHA1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Description: DIODE GEN PURP 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| F1T7GHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Description: DIODE GEN PURP 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| F1T7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| F1T7GH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.093 EUR |
| HT18G A1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HT18G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.088 EUR |
| HT18G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS25P07GH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1182 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.51 EUR |
| 15+ | 2.72 EUR |
| 105+ | 2 EUR |
| 510+ | 1.63 EUR |
| 1005+ | 1.51 EUR |
| TS50P07GH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1177 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 5.95 EUR |
| 15+ | 3.66 EUR |
| 105+ | 2.73 EUR |
| 510+ | 2.25 EUR |
| 1005+ | 2.09 EUR |
| TS15P07G C2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS6P07GHC2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS8P07G C2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 8A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 8A TS-6P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS6P07G C2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS6P07G D2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS50P07G C2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS15P07G-K D2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1T7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS10P07G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.99 EUR |
| 15+ | 1.9 EUR |
| 105+ | 1.43 EUR |
| 510+ | 1.17 EUR |
| 1005+ | 1.09 EUR |
| FR152GH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE13AH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52B4V3S RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD323F
Description: DIODE ZENER 4.3V 200MW SOD323F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52B4V3-G RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 410MW SOD123
Description: DIODE ZENER 4.3V 410MW SOD123
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52B4V3 RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW SOD123F
Description: DIODE ZENER 4.3V 500MW SOD123F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS320LWH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.11 EUR |
| 20000+ | 0.1 EUR |
| SS320LWH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 29235 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 41+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.16 EUR |
| 5000+ | 0.14 EUR |
| PGSMAJ18CAHF4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SF68G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 18+ | 1.01 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.51 EUR |
| SF68GH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1250+ | 0.45 EUR |
| HER157G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HER605G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 6A R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 6A R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ10CAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 92A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 92A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ10CA V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ10CA R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ10CA V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ10CA M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ10CA R6 |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ10CAHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ78HR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 139VC DO214AC
Description: TVS DIODE 78VWM 139VC DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 0.25 EUR |
| 3600+ | 0.23 EUR |
| SMAJ78HR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 139VC DO214AC
Description: TVS DIODE 78VWM 139VC DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 27+ | 0.66 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| SMAJ78CHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 139VC DO214AC
Description: TVS DIODE 78VWM 139VC DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 0.33 EUR |
| 3600+ | 0.3 EUR |
| SMAJ78CHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 139VC DO214AC
Description: TVS DIODE 78VWM 139VC DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| SMAJ78CAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AC
Description: TVS DIODE 78VWM 126VC DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ78CAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AC
Description: TVS DIODE 78VWM 126VC DO214AC
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.43 EUR |
| SMAJ78CAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 78VWM 126VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ78CA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AC
Description: TVS DIODE 78VWM 126VC DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZS6V2B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 3 V
Description: DIODE ZENER 6.2V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 3 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZS13B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 10 V
Description: DIODE ZENER 13V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZS18B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 13 V
Description: DIODE ZENER 18V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZS36B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 27 V
Description: DIODE ZENER 36V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 27 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZS27B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
Description: DIODE ZENER 27V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZS22B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 17 V
Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 17 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZS33B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 200MW SOD323F
Description: DIODE ZENER 33V 200MW SOD323F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZS3V9B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Description: DIODE ZENER 3.9V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH