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BZX584B5V1 RSG BZX584B5V1 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.1V 150MW SOD523F
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BZX584B12 RKG BZX584B12 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 12V 150MW SOD523F
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BZX584B15 RKG BZX584B15 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 15V 150MW SOD523F
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BZX584B6V8 RSG BZX584B6V8 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.8V 150MW SOD523F
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BZX584B16 RKG BZX584B16 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 16V 150MW SOD523F
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BZX584B20 RKG BZX584B20 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 20V 150MW SOD523F
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BZX584B5V6 RKG BZX584B5V6 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.6V 150MW SOD523F
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BZX584B7V5 RKG BZX584B7V5 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 7.5V 150MW SOD523F
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1.5KE91CAH 1.5KE91CAH Taiwan Semiconductor Corporation Description: TVS DIODE 77.8VWM 125VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
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SMAJ150AH SMAJ150AH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TST40L120CW TST40L120CW Taiwan Semiconductor Corporation TST40L100CW-TST40L200CW%20C2104.pdf Description: DIODE SCHOTTKY 120V 20A TO220AB
auf Bestellung 990 Stücke:
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10+5.31 EUR
100+4.27 EUR
500+3.51 EUR
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TS20P06G TS20P06G Taiwan Semiconductor Corporation TS20P01G SERIES_O2203.pdf Description: BRIDGE RECT 1P 800V 20A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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P6SMB18AH P6SMB18AH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 15.3VWM 25.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SFA801G C0G SFA801G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 50V 8A TO220AC
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SFA802GHC0G SFA802GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 100V 8A TO220AC
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SFA803G C0G SFA803G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 150V 8A TO220AC
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SFA805G C0G SFA805G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 300V 8A TO220AC
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SFA806GHC0G SFA806GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 400V 8A TO220AC
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SFA808GHC0G SFA808GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 600V 8A TO220AC
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SFA801GHC0G SFA801GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 50V 8A TO220AC
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SFA803GHC0G SFA803GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 150V 8A TO220AC
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SFA807G C0G SFA807G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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SFA807GHC0G SFA807GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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SFA802G C0G SFA802G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 100V 8A TO220AC
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SFA805GHC0G SFA805GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 300V 8A TO220AC
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SFA806G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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SFA806G SFA806G Taiwan Semiconductor Corporation SFA801G SERIES_K2103.pdf Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 1000 Stücke:
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9+2.48 EUR
50+1.15 EUR
100+1.04 EUR
500+0.81 EUR
1000+0.74 EUR
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PGSMAJ10CA F4G PGSMAJ10CA F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 10VWM 17VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 23.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
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SK14BH SK14BH Taiwan Semiconductor Corporation SK12BH SERIES_B2212.pdf Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SMCJ33CA M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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TSM260P02CX RFG TSM260P02CX RFG Taiwan Semiconductor Corporation TSM260P02CX_A2312.pdf Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
auf Bestellung 12000 Stücke:
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3000+0.35 EUR
6000+0.32 EUR
9000+0.3 EUR
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TSM260P02CX RFG TSM260P02CX RFG Taiwan Semiconductor Corporation TSM260P02CX_A2312.pdf Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
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24+0.9 EUR
100+0.58 EUR
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TSM2323CX RFG TSM2323CX RFG Taiwan Semiconductor Corporation TSM2323_F15.pdf Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 63000 Stücke:
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3000+0.55 EUR
6000+0.5 EUR
9000+0.49 EUR
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TSM2323CX RFG TSM2323CX RFG Taiwan Semiconductor Corporation TSM2323_F15.pdf Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
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TSUP10M45SH TSUP10M45SH Taiwan Semiconductor Corporation TSUP10M45SH_B2103.pdf Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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TSUP10M45SH TSUP10M45SH Taiwan Semiconductor Corporation TSUP10M45SH_B2103.pdf Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9876 Stücke:
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10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
2000+0.62 EUR
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MTZJ9V1SB R0G MTZJ9V1SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 8.79V 500MW DO34
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 8.79 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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MTZJ4V3SC R0G MTZJ4V3SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.44V 500MW DO34
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MTZJ4V3SA R0G MTZJ4V3SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.17V 500MW DO34
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MTZJ7V5SC R0G MTZJ7V5SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 7.48V 500MW DO34
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MTZJ6V2SA R0G MTZJ6V2SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 5.94V 500MW DO34
Produkt ist nicht verfügbar
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MBRF1060CTH MBRF1060CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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SMDJ60CA R7G SMDJ60CA R7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Produkt ist nicht verfügbar
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SMDJ60A M6G SMDJ60A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ60A R7G SMDJ60A R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ60CAHM6G SMDJ60CAHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ60CA M6G SMDJ60CA M6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Produkt ist nicht verfügbar
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SMDJ60AHM6G SMDJ60AHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ60CAHR7G SMDJ60CAHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ60AHR7G SMDJ60AHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ60CAH SMDJ60CAH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SMDJ60AH SMDJ60AH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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5.0SMDJ64AH 5.0SMDJ64AH Taiwan Semiconductor Corporation 5.0SMDJH SERIES_A2102.pdf Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 48.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+1.86 EUR
Mindestbestellmenge: 3000 Stücke
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5.0SMDJ64AH 5.0SMDJ64AH Taiwan Semiconductor Corporation 5.0SMDJH SERIES_A2102.pdf Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 48.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 4725 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.15 EUR
10+4 EUR
50+3.07 EUR
100+2.77 EUR
500+2.25 EUR
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5.0SMDJ64AHM6G 5.0SMDJ64AHM6G Taiwan Semiconductor Corporation 5.0SMDJH%20SERIES_A2102.pdf Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
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SMDJ64A R7G SMDJ64A R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 64VWM 103VC DO214AB
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SMDJ64A M6G SMDJ64A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 64VWM 103VC DO214AB
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SMDJ64AHR7G SMDJ64AHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
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SMDJ64AHM6G SMDJ64AHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
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SMDJ64CAH SMDJ64CAH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29.1A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZX584B5V1 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V1 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
Produkt ist nicht verfügbar
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BZX584B12 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B12 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 150MW SOD523F
Produkt ist nicht verfügbar
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BZX584B15 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B15 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 150MW SOD523F
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BZX584B6V8 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V8 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
Produkt ist nicht verfügbar
Mindestbestellmenge: 104000 Stücke
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BZX584B16 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B16 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 150MW SOD523F
Produkt ist nicht verfügbar
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BZX584B20 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B20 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 150MW SOD523F
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BZX584B5V6 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V6 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 150MW SOD523F
Produkt ist nicht verfügbar
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BZX584B7V5 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B7V5 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 150MW SOD523F
Produkt ist nicht verfügbar
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1.5KE91CAH
1.5KE91CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8VWM 125VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1250 Stücke
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SMAJ150AH SMAJH SERIES_A2102.pdf
SMAJ150AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TST40L120CW TST40L100CW-TST40L200CW%20C2104.pdf
TST40L120CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 20A TO220AB
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.93 EUR
10+5.31 EUR
100+4.27 EUR
500+3.51 EUR
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TS20P06G TS20P01G SERIES_O2203.pdf
TS20P06G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 20A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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P6SMB18AH P6SMBH SERIES_A2102.pdf
P6SMB18AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
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SFA801G C0G SFA801G%20SERIES_K2103.pdf
SFA801G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 8A TO220AC
Produkt ist nicht verfügbar
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SFA802GHC0G SFA801G%20SERIES_K2103.pdf
SFA802GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
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SFA803G C0G SFA801G%20SERIES_K2103.pdf
SFA803G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 8A TO220AC
Produkt ist nicht verfügbar
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SFA805G C0G SFA801G%20SERIES_K2103.pdf
SFA805G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 8A TO220AC
Produkt ist nicht verfügbar
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SFA806GHC0G SFA801G%20SERIES_K2103.pdf
SFA806GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO220AC
Produkt ist nicht verfügbar
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SFA808GHC0G SFA801G%20SERIES_K2103.pdf
SFA808GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Produkt ist nicht verfügbar
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SFA801GHC0G SFA801G%20SERIES_K2103.pdf
SFA801GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 8A TO220AC
Produkt ist nicht verfügbar
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SFA803GHC0G SFA801G%20SERIES_K2103.pdf
SFA803GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 8A TO220AC
Produkt ist nicht verfügbar
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SFA807G C0G SFA801G%20SERIES_K2103.pdf
SFA807G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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SFA807GHC0G SFA801G%20SERIES_K2103.pdf
SFA807GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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SFA802G C0G SFA801G%20SERIES_K2103.pdf
SFA802G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
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SFA805GHC0G SFA801G%20SERIES_K2103.pdf
SFA805GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 8A TO220AC
Produkt ist nicht verfügbar
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SFA806G C0G SFA801G%20SERIES_K2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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SFA806G SFA801G SERIES_K2103.pdf
SFA806G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
50+1.15 EUR
100+1.04 EUR
500+0.81 EUR
1000+0.74 EUR
Mindestbestellmenge: 9 Stücke
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PGSMAJ10CA F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ10CA F4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 23.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Produkt ist nicht verfügbar
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SK14BH SK12BH SERIES_B2212.pdf
SK14BH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ33CA M6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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TSM260P02CX RFG TSM260P02CX_A2312.pdf
TSM260P02CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
6000+0.32 EUR
9000+0.3 EUR
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TSM260P02CX RFG TSM260P02CX_A2312.pdf
TSM260P02CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 12001 Stücke:
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AnzahlPrivatkunde
15+1.46 EUR
24+0.9 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.4 EUR
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TSM2323CX RFG TSM2323_F15.pdf
TSM2323CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.55 EUR
6000+0.5 EUR
9000+0.49 EUR
15000+0.46 EUR
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TSM2323CX RFG TSM2323_F15.pdf
TSM2323CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 66151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.15 EUR
16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 10 Stücke
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TSUP10M45SH TSUP10M45SH_B2103.pdf
TSUP10M45SH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.54 EUR
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TSUP10M45SH TSUP10M45SH_B2103.pdf
TSUP10M45SH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9876 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
2000+0.62 EUR
Mindestbestellmenge: 10 Stücke
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MTZJ9V1SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ9V1SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.79V 500MW DO34
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 8.79 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MTZJ4V3SC R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V3SC R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.44V 500MW DO34
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MTZJ4V3SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V3SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.17V 500MW DO34
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MTZJ7V5SC R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ7V5SC R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.48V 500MW DO34
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MTZJ6V2SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ6V2SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.94V 500MW DO34
Produkt ist nicht verfügbar
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MBRF1060CTH
MBRF1060CTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ60CA R7G SMDJH%20SERIES_B2104.pdf
SMDJ60CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Produkt ist nicht verfügbar
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SMDJ60A M6G SMDJ%20SERIES_I2104.pdf
SMDJ60A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ60A R7G SMDJ%20SERIES_I2104.pdf
SMDJ60A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ60CAHM6G SMDJH%20SERIES_B2104.pdf
SMDJ60CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ60CA M6G SMDJH%20SERIES_B2104.pdf
SMDJ60CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Produkt ist nicht verfügbar
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SMDJ60AHM6G SMDJH%20SERIES_B2104.pdf
SMDJ60AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ60CAHR7G SMDJH%20SERIES_B2104.pdf
SMDJ60CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ60AHR7G SMDJH%20SERIES_B2104.pdf
SMDJ60AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ60CAH SMDJH SERIES_B2104.pdf
SMDJ60CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMDJ60AH SMDJH SERIES_B2104.pdf
SMDJ60AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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5.0SMDJ64AH 5.0SMDJH SERIES_A2102.pdf
5.0SMDJ64AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 48.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.86 EUR
Mindestbestellmenge: 3000 Stücke
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5.0SMDJ64AH 5.0SMDJH SERIES_A2102.pdf
5.0SMDJ64AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 48.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 4725 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.15 EUR
10+4 EUR
50+3.07 EUR
100+2.77 EUR
500+2.25 EUR
Mindestbestellmenge: 4 Stücke
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5.0SMDJ64AHM6G 5.0SMDJH%20SERIES_A2102.pdf
5.0SMDJ64AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMDJ64A R7G SMDJ%20SERIES_I2104.pdf
SMDJ64A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
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SMDJ64A M6G SMDJ%20SERIES_I2104.pdf
SMDJ64A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
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SMDJ64AHR7G SMDJH%20SERIES_B2104.pdf
SMDJ64AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
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SMDJ64AHM6G SMDJH%20SERIES_B2104.pdf
SMDJ64AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
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SMDJ64CAH SMDJH SERIES_B2104.pdf
SMDJ64CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29.1A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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