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MUR340SB MUR340SB Taiwan Semiconductor Corporation MUR340SB SERIES_D2211.pdf Description: DIODE STANDARD 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3000 Stücke:
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3000+0.31 EUR
Mindestbestellmenge: 3000
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MUR340SBH MUR340SBH Taiwan Semiconductor Corporation MUR340SBH SERIES_B2211.pdf Description: DIODE STANDARD 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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3000+0.31 EUR
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MUR320SBH MUR320SBH Taiwan Semiconductor Corporation MUR305SBH SERIES_A2102.pdf Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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3000+0.31 EUR
Mindestbestellmenge: 3000
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MUR305SH MUR305SH Taiwan Semiconductor Corporation MUR305SH SERIES_B2212.pdf Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MUR340S R7 Taiwan Semiconductor Corporation MUR305S%20SERIES_J2212.pdf Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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1.5SMC62CA M6G 1.5SMC62CA M6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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1.5KE16CAH 1.5KE16CAH Taiwan Semiconductor Corporation Description: TVS DIODE 13.6VWM 22.5VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS6KL60 Taiwan Semiconductor Corporation TS6KL60 SERIES_E2104.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBJL
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2000 Stücke:
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13+1.41 EUR
20+1.15 EUR
100+0.89 EUR
500+0.76 EUR
1000+0.62 EUR
2000+0.58 EUR
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SMDJ58CA M6G SMDJ58CA M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMDJ58CA R7G SMDJ58CA R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMDJ58CAHR7G SMDJ58CAHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ58CAHM6G SMDJ58CAHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ58CAH SMDJ58CAH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ58AH SMDJ58AH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS50P07G TS50P07G Taiwan Semiconductor Corporation TS50P05G SERIES_H2203.pdf Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 5624 Stücke:
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105+2.65 EUR
510+2.23 EUR
1005+2.15 EUR
2010+2.05 EUR
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TS40P07G TS40P07G Taiwan Semiconductor Corporation TS40P05G SERIES_G2203.pdf Description: BRIDGE RECT 1PHASE 1KV 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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TS35P07G TS35P07G Taiwan Semiconductor Corporation TS35P05G SERIES_F2203.pdf Description: BRIDGE RECT 1PHASE 1KV 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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TS25P07G TS25P07G Taiwan Semiconductor Corporation TS25P01G SERIES_Q2203.pdf Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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TS15P07G TS15P07G Taiwan Semiconductor Corporation TS15P01G SERIES_N2203.pdf Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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TS6P07G TS6P07G Taiwan Semiconductor Corporation Description: DIODE BRIDGE 6A 1000V TS-6P
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F1T7G A1G F1T7G A1G Taiwan Semiconductor Corporation F1T1G%20SERIES_H2104.pdf Description: DIODE GEN PURP 1A TS-1
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F1T7G A0G F1T7G A0G Taiwan Semiconductor Corporation F1T1G%20SERIES_H2104.pdf Description: DIODE GEN PURP 1A TS-1
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F1T7GHA1G F1T7GHA1G Taiwan Semiconductor Corporation F1T1G%20SERIES_H2104.pdf Description: DIODE GEN PURP 1A TS-1
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F1T7GHA0G F1T7GHA0G Taiwan Semiconductor Corporation F1T1G%20SERIES_H2104.pdf Description: DIODE GEN PURP 1A TS-1
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F1T7G F1T7G Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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F1T7GH F1T7GH Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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HT18G A1G HT18G A1G Taiwan Semiconductor Corporation HT11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HT18G HT18G Taiwan Semiconductor Corporation HT11G SERIES_H2104.pdf Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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5000+0.087 EUR
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HT18G A0G HT18G A0G Taiwan Semiconductor Corporation HT11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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TS25P07GH TS25P07GH Taiwan Semiconductor Corporation TS25P01G SERIES_Q2203.pdf Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1182 Stücke:
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TS50P07GH TS50P07GH Taiwan Semiconductor Corporation TS50P05G SERIES_H2203.pdf Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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TS15P07G C2G TS15P07G C2G Taiwan Semiconductor Corporation TS15P01G%20SERIES_M2104.pdf Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
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TS6P07GHC2G TS6P07GHC2G Taiwan Semiconductor Corporation TS6P01G%20SERIES_L2104.pdf Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
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TS8P07G C2G TS8P07G C2G Taiwan Semiconductor Corporation TS8P01G%20SERIES_L2104.pdf Description: BRIDGE RECT 1PHASE 1KV 8A TS-6P
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TS6P07G C2G TS6P07G C2G Taiwan Semiconductor Corporation TS6P01G%20SERIES_L2104.pdf Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
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TS6P07G D2G TS6P07G D2G Taiwan Semiconductor Corporation TS6P01G%20SERIES_L2104.pdf Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
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TS50P07G C2G TS50P07G C2G Taiwan Semiconductor Corporation TS50P05G%20SERIES_G2104.pdf Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
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TS15P07G-K D2G TS15P07G-K D2G Taiwan Semiconductor Corporation TS15P05G-K_TS15P07G-K_A1807.pdf Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
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1T7G 1T7G Taiwan Semiconductor Corporation 1T1G SERIES_H2104.pdf Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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TS10P07G TS10P07G Taiwan Semiconductor Corporation TS10P01G SERIES_L2203.pdf Description: BRIDGE RECT 1PHASE 1KV 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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FR152GH FR152GH Taiwan Semiconductor Corporation pdf.php?pn=FR152G Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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1.5KE13AH 1.5KE13AH Taiwan Semiconductor Corporation Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BZT52B4V3S RRG BZT52B4V3S RRG Taiwan Semiconductor Corporation BZT52B2V4S%20series_G1804.pdf Description: DIODE ZENER 4.3V 200MW SOD323F
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BZT52B4V3-G RHG BZT52B4V3-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G%20SERIES_H2002.pdf Description: DIODE ZENER 4.3V 410MW SOD123
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BZT52B4V3 RHG BZT52B4V3 RHG Taiwan Semiconductor Corporation BZT52B2V4%20series_F15.pdf Description: DIODE ZENER 4.3V 500MW SOD123F
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SS320LWH SS320LWH Taiwan Semiconductor Corporation SS34LWH SERIES_A2103.pdf Description: DIODE SCHOTTKY 200V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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SS320LWH SS320LWH Taiwan Semiconductor Corporation SS34LWH SERIES_A2103.pdf Description: DIODE SCHOTTKY 200V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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500+0.2 EUR
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PGSMAJ18CAHF4G PGSMAJ18CAHF4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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SF68G SF68G Taiwan Semiconductor Corporation SF61G%20SERIES_G2105.pdf Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1962 Stücke:
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SF68GH SF68GH Taiwan Semiconductor Corporation SF61G SERIES_G2105.pdf Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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HER157G HER157G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE STANDARD 800V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HER605G HER605G Taiwan Semiconductor Corporation HER601G SERIES_H2104.pdf Description: DIODE STANDARD 400V 6A R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SMCJ10CAH SMCJ10CAH Taiwan Semiconductor Corporation SMCJH SERIES_A2102.pdf Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 92A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ10CA V7G SMCJ10CA V7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 10VWM 17VC DO214AB
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SMCJ10CA R7G SMCJ10CA R7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 10VWM 17VC DO214AB
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SMCJ10CA V6G SMCJ10CA V6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 10VWM 17VC DO214AB
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SMCJ10CA M6G SMCJ10CA M6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 10VWM 17VC DO214AB
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SMCJ10CA R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SMCJ10CAHR7G SMCJ10CAHR7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 10VWM 17VC DO214AB
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SMAJ78HR3G SMAJ78HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 78VWM 139VC DO214AC
auf Bestellung 3600 Stücke:
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1800+0.25 EUR
3600+0.23 EUR
Mindestbestellmenge: 1800
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MUR340SB MUR340SB SERIES_D2211.pdf
MUR340SB
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
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MUR340SBH MUR340SBH SERIES_B2211.pdf
MUR340SBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
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MUR320SBH MUR305SBH SERIES_A2102.pdf
MUR320SBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
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MUR305SH MUR305SH SERIES_B2212.pdf
MUR305SH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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MUR340S R7 MUR305S%20SERIES_J2212.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1.5SMC62CA M6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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1.5KE16CAH
1.5KE16CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6VWM 22.5VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS6KL60 TS6KL60 SERIES_E2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBJL
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2000 Stücke:
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Anzahl Preis
13+1.41 EUR
20+1.15 EUR
100+0.89 EUR
500+0.76 EUR
1000+0.62 EUR
2000+0.58 EUR
Mindestbestellmenge: 13
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SMDJ58CA M6G SMDJ%20SERIES_I2104.pdf
SMDJ58CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMDJ58CA R7G SMDJ%20SERIES_I2104.pdf
SMDJ58CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMDJ58CAHR7G SMDJH%20SERIES_B2104.pdf
SMDJ58CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ58CAHM6G SMDJH%20SERIES_B2104.pdf
SMDJ58CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
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SMDJ58CAH SMDJH SERIES_B2104.pdf
SMDJ58CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ58AH SMDJH SERIES_B2104.pdf
SMDJ58AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS50P07G TS50P05G SERIES_H2203.pdf
TS50P07G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 5624 Stücke:
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Anzahl Preis
3+6.18 EUR
15+3.59 EUR
105+2.65 EUR
510+2.23 EUR
1005+2.15 EUR
2010+2.05 EUR
Mindestbestellmenge: 3
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TS40P07G TS40P05G SERIES_G2203.pdf
TS40P07G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1462 Stücke:
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Anzahl Preis
4+4.88 EUR
15+2.94 EUR
105+2.17 EUR
510+1.76 EUR
1005+1.63 EUR
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TS35P07G TS35P05G SERIES_F2203.pdf
TS35P07G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 202 Stücke:
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Anzahl Preis
5+3.54 EUR
15+2.26 EUR
105+1.71 EUR
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TS25P07G TS25P01G SERIES_Q2203.pdf
TS25P07G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 563 Stücke:
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Anzahl Preis
5+4.31 EUR
15+2.39 EUR
105+1.84 EUR
510+1.51 EUR
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TS15P07G TS15P01G SERIES_N2203.pdf
TS15P07G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 120 Stücke:
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Anzahl Preis
7+2.78 EUR
15+1.76 EUR
105+1.31 EUR
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TS6P07G
TS6P07G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 6A 1000V TS-6P
Produkt ist nicht verfügbar
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F1T7G A1G F1T1G%20SERIES_H2104.pdf
F1T7G A1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Produkt ist nicht verfügbar
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F1T7G A0G F1T1G%20SERIES_H2104.pdf
F1T7G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Produkt ist nicht verfügbar
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F1T7GHA1G F1T1G%20SERIES_H2104.pdf
F1T7GHA1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Produkt ist nicht verfügbar
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F1T7GHA0G F1T1G%20SERIES_H2104.pdf
F1T7GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Produkt ist nicht verfügbar
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F1T7G F1T1G SERIES_H2104.pdf
F1T7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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F1T7GH F1T1G SERIES_H2104.pdf
F1T7GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.093 EUR
Mindestbestellmenge: 5000
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HT18G A1G HT11G%20SERIES_H2104.pdf
HT18G A1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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HT18G HT11G SERIES_H2104.pdf
HT18G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.087 EUR
Mindestbestellmenge: 5000
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HT18G A0G HT11G%20SERIES_H2104.pdf
HT18G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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TS25P07GH TS25P01G SERIES_Q2203.pdf
TS25P07GH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
15+2.72 EUR
105+2 EUR
510+1.63 EUR
1005+1.51 EUR
Mindestbestellmenge: 4
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TS50P07GH TS50P05G SERIES_H2203.pdf
TS50P07GH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
15+3.66 EUR
105+2.73 EUR
510+2.25 EUR
1005+2.09 EUR
Mindestbestellmenge: 3
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TS15P07G C2G TS15P01G%20SERIES_M2104.pdf
TS15P07G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Produkt ist nicht verfügbar
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TS6P07GHC2G TS6P01G%20SERIES_L2104.pdf
TS6P07GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
Produkt ist nicht verfügbar
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TS8P07G C2G TS8P01G%20SERIES_L2104.pdf
TS8P07G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 8A TS-6P
Produkt ist nicht verfügbar
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TS6P07G C2G TS6P01G%20SERIES_L2104.pdf
TS6P07G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
Produkt ist nicht verfügbar
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TS6P07G D2G TS6P01G%20SERIES_L2104.pdf
TS6P07G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A TS-6P
Produkt ist nicht verfügbar
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TS50P07G C2G TS50P05G%20SERIES_G2104.pdf
TS50P07G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 50A TS-6P
Produkt ist nicht verfügbar
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TS15P07G-K D2G TS15P05G-K_TS15P07G-K_A1807.pdf
TS15P07G-K D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Produkt ist nicht verfügbar
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1T7G 1T1G SERIES_H2104.pdf
1T7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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TS10P07G TS10P01G SERIES_L2203.pdf
TS10P07G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
15+1.9 EUR
105+1.43 EUR
510+1.17 EUR
1005+1.09 EUR
Mindestbestellmenge: 6
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FR152GH pdf.php?pn=FR152G
FR152GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE13AH
1.5KE13AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B4V3S RRG BZT52B2V4S%20series_G1804.pdf
BZT52B4V3S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD323F
Produkt ist nicht verfügbar
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BZT52B4V3-G RHG BZT52B2V4-G%20SERIES_H2002.pdf
BZT52B4V3-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 410MW SOD123
Produkt ist nicht verfügbar
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BZT52B4V3 RHG BZT52B2V4%20series_F15.pdf
BZT52B4V3 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW SOD123F
Produkt ist nicht verfügbar
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SS320LWH SS34LWH SERIES_A2103.pdf
SS320LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.1 EUR
Mindestbestellmenge: 10000
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SS320LWH SS34LWH SERIES_A2103.pdf
SS320LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 32100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
42+0.42 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
5000+0.14 EUR
Mindestbestellmenge: 27
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PGSMAJ18CAHF4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ18CAHF4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SF68G SF61G%20SERIES_G2105.pdf
SF68G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1.01 EUR
100+0.66 EUR
500+0.51 EUR
Mindestbestellmenge: 11
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SF68GH SF61G SERIES_G2105.pdf
SF68GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.45 EUR
Mindestbestellmenge: 1250
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HER157G HER151G SERIES_I2105.pdf
HER157G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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HER605G HER601G SERIES_H2104.pdf
HER605G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 6A R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SMCJ10CAH SMCJH SERIES_A2102.pdf
SMCJ10CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 92A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ10CA V7G SMCJ%20SERIES_S2104.pdf
SMCJ10CA V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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SMCJ10CA R7G SMCJ%20SERIES_S2104.pdf
SMCJ10CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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SMCJ10CA V6G SMCJ%20SERIES_S2104.pdf
SMCJ10CA V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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SMCJ10CA M6G SMCJ%20SERIES_S2104.pdf
SMCJ10CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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SMCJ10CA R6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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SMCJ10CAHR7G SMCJ%20SERIES_S2104.pdf
SMCJ10CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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SMAJ78HR3G SMAJ%20SERIES_U2102.pdf
SMAJ78HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 139VC DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.25 EUR
3600+0.23 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
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