Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25360) > Seite 230 nach 423

Wählen Sie Seite:   [  << Vorherige Seite ]  1 42 84 126 168 210 225 226 227 228 229 230 231 232 233 234 235 252 294 336 378 420 423  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HS2JAL HS2JAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2JAL HS2JAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 3425 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
40+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
HS1KFS HS1KFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1KFS HS1KFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
52+0.34 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
HS1KAL HS1KAL Taiwan Semiconductor Corporation HS1DAL SERIES_D2103.pdf Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1KAL HS1KAL Taiwan Semiconductor Corporation HS1DAL SERIES_D2103.pdf Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2KFS HS2KFS Taiwan Semiconductor Corporation pdf.php?pn=HS2KFS Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2KFS HS2KFS Taiwan Semiconductor Corporation pdf.php?pn=HS2KFS Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6800 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
HS2KAL HS2KAL Taiwan Semiconductor Corporation pdf.php?pn=HS2KAL Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2KAL HS2KAL Taiwan Semiconductor Corporation pdf.php?pn=HS2KAL Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 3485 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
36+0.5 EUR
100+0.25 EUR
500+0.22 EUR
1000+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
HERAF1606G HERAF1606G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
50+1.47 EUR
100+1.17 EUR
500+0.99 EUR
1000+0.81 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B13 RKG BZX584B13 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 13V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B6V2 RKG BZX584B6V2 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.2V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B10 RKG BZX584B10 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 10V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B5V1 RKG BZX584B5V1 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.1V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B4V7 RKG BZX584B4V7 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 4.7V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B8V2 RSG BZX584B8V2 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 8.2V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B6V8 RKG BZX584B6V8 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.8V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B9V1 RKG BZX584B9V1 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 9.1V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B7V5 RSG BZX584B7V5 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 7.5V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B11 RKG BZX584B11 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 11V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B8V2 RKG BZX584B8V2 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 8.2V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B5V1 RSG BZX584B5V1 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.1V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B12 RKG BZX584B12 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 12V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B15 RKG BZX584B15 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 15V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B6V8 RSG BZX584B6V8 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.8V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B16 RKG BZX584B16 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 16V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B20 RKG BZX584B20 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 20V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B5V6 RKG BZX584B5V6 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.6V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B7V5 RKG BZX584B7V5 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 7.5V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE91CAH 1.5KE91CAH Taiwan Semiconductor Corporation Description: TVS DIODE 77.8VWM 125VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ150AH SMAJ150AH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TST40L120CW TST40L120CW Taiwan Semiconductor Corporation TST40L100CW-TST40L200CW%20C2104.pdf Description: DIODE SCHOTTKY 120V 20A TO220AB
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.98 EUR
10+4.46 EUR
100+3.59 EUR
500+2.95 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TS20P06G TS20P06G Taiwan Semiconductor Corporation TS20P01G SERIES_O2203.pdf Description: BRIDGE RECT 1P 800V 20A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.48 EUR
15+2.08 EUR
105+1.51 EUR
510+1.21 EUR
1005+1.12 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB18AH P6SMB18AH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 15.3VWM 25.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SFA801G C0G SFA801G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 50V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA802GHC0G SFA802GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA803G C0G SFA803G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 150V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA805G C0G SFA805G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 300V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA806GHC0G SFA806GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 400V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA808GHC0G SFA808GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA801GHC0G SFA801GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 50V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA803GHC0G SFA803GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 150V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA807G C0G SFA807G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA807GHC0G SFA807GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA802G C0G SFA802G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA805GHC0G SFA805GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 300V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA806G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA806G SFA806G Taiwan Semiconductor Corporation SFA801G SERIES_K2103.pdf Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
50+0.97 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PGSMAJ10CA F4G PGSMAJ10CA F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 10VWM 17VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 23.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SK14BH SK14BH Taiwan Semiconductor Corporation SK12BH SERIES_B2212.pdf Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ33CA M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM260P02CX RFG TSM260P02CX RFG Taiwan Semiconductor Corporation TSM260P02CX_A2312.pdf Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.27 EUR
9000+0.25 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TSM260P02CX RFG TSM260P02CX RFG Taiwan Semiconductor Corporation TSM260P02CX_A2312.pdf Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 12001 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
24+0.76 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
TSM2323CX RFG TSM2323CX RFG Taiwan Semiconductor Corporation TSM2323_F15.pdf Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.46 EUR
6000+0.42 EUR
9000+0.41 EUR
15000+0.39 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TSM2323CX RFG TSM2323CX RFG Taiwan Semiconductor Corporation TSM2323_F15.pdf Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 66151 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
TSUP10M45SH TSUP10M45SH Taiwan Semiconductor Corporation TSUP10M45SH_B2103.pdf Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.45 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
TSUP10M45SH TSUP10M45SH Taiwan Semiconductor Corporation TSUP10M45SH_B2103.pdf Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9876 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
15+1.22 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
2000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MTZJ9V1SB R0G MTZJ9V1SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 8.79V 500MW DO34
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 8.79 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MTZJ4V3SC R0G MTZJ4V3SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.44V 500MW DO34
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2JAL HS2DAL SERIES_C2103.pdf
HS2JAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2JAL HS2DAL SERIES_C2103.pdf
HS2JAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 3425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
40+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
HS1KFS HS1DFS SERIES_C2103.pdf
HS1KFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1KFS HS1DFS SERIES_C2103.pdf
HS1KFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
52+0.34 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
HS1KAL HS1DAL SERIES_D2103.pdf
HS1KAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1KAL HS1DAL SERIES_D2103.pdf
HS1KAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2KFS pdf.php?pn=HS2KFS
HS2KFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2KFS pdf.php?pn=HS2KFS
HS2KFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
HS2KAL pdf.php?pn=HS2KAL
HS2KAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2KAL pdf.php?pn=HS2KAL
HS2KAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 3485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
36+0.5 EUR
100+0.25 EUR
500+0.22 EUR
1000+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
HERAF1606G
HERAF1606G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
50+1.47 EUR
100+1.17 EUR
500+0.99 EUR
1000+0.81 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B13 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B13 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B6V2 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V2 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B10 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B10 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B5V1 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V1 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B4V7 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B4V7 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B8V2 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B8V2 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B6V8 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V8 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B9V1 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B9V1 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B7V5 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B7V5 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B11 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B11 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B8V2 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B8V2 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B5V1 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V1 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B12 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B12 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B15 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B15 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B6V8 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V8 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B16 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B16 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B20 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B20 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B5V6 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V6 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX584B7V5 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B7V5 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 150MW SOD523F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE91CAH
1.5KE91CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8VWM 125VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ150AH SMAJH SERIES_A2102.pdf
SMAJ150AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TST40L120CW TST40L100CW-TST40L200CW%20C2104.pdf
TST40L120CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 20A TO220AB
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
10+4.46 EUR
100+3.59 EUR
500+2.95 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TS20P06G TS20P01G SERIES_O2203.pdf
TS20P06G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 20A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
15+2.08 EUR
105+1.51 EUR
510+1.21 EUR
1005+1.12 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB18AH P6SMBH SERIES_A2102.pdf
P6SMB18AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SFA801G C0G SFA801G%20SERIES_K2103.pdf
SFA801G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA802GHC0G SFA801G%20SERIES_K2103.pdf
SFA802GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA803G C0G SFA801G%20SERIES_K2103.pdf
SFA803G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA805G C0G SFA801G%20SERIES_K2103.pdf
SFA805G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA806GHC0G SFA801G%20SERIES_K2103.pdf
SFA806GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA808GHC0G SFA801G%20SERIES_K2103.pdf
SFA808GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA801GHC0G SFA801G%20SERIES_K2103.pdf
SFA801GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA803GHC0G SFA801G%20SERIES_K2103.pdf
SFA803GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA807G C0G SFA801G%20SERIES_K2103.pdf
SFA807G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA807GHC0G SFA801G%20SERIES_K2103.pdf
SFA807GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA802G C0G SFA801G%20SERIES_K2103.pdf
SFA802G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA805GHC0G SFA801G%20SERIES_K2103.pdf
SFA805GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA806G C0G SFA801G%20SERIES_K2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFA806G SFA801G SERIES_K2103.pdf
SFA806G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
50+0.97 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PGSMAJ10CA F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ10CA F4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 23.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SK14BH SK12BH SERIES_B2212.pdf
SK14BH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ33CA M6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM260P02CX RFG TSM260P02CX_A2312.pdf
TSM260P02CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.27 EUR
9000+0.25 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TSM260P02CX RFG TSM260P02CX_A2312.pdf
TSM260P02CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 12001 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
24+0.76 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
TSM2323CX RFG TSM2323_F15.pdf
TSM2323CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
6000+0.42 EUR
9000+0.41 EUR
15000+0.39 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TSM2323CX RFG TSM2323_F15.pdf
TSM2323CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 66151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
TSUP10M45SH TSUP10M45SH_B2103.pdf
TSUP10M45SH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.45 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
TSUP10M45SH TSUP10M45SH_B2103.pdf
TSUP10M45SH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
15+1.22 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
2000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MTZJ9V1SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ9V1SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.79V 500MW DO34
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 8.79 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MTZJ4V3SC R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V3SC R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.44V 500MW DO34
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 42 84 126 168 210 225 226 227 228 229 230 231 232 233 234 235 252 294 336 378 420 423  [ Nächste Seite >> ]