Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (23118) > Seite 235 nach 386
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UDZS27B RRG | Taiwan Semiconductor Corporation |
 Description: DIODE ZENER 27V 200MW SOD323FPackaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 21 V |
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UDZS22B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 17 V |
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UDZS33B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 200MW SOD323F |
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UDZS24B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 24V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 19 V |
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UDZS3V9B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.9V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V |
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UDZS33B R9G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 25 V |
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UDZS5V1B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 1.8 µA @ 2 V |
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UDZS16B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 16V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 12 V |
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UDZS20B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 20V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 15 V |
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UDZS7V5B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 900 nA @ 4 V |
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UDZS12B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 90 nA @ 9 V |
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UDZS6V8B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 200MW SOD323F |
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| SMCJ40A R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
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SMCJ40AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40VWM 64.5VC DO214AB |
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ES1CLHRHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
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ES1CHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A DO214AC |
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ES1CL RUG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
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ES1CLHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
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ES1CLHRQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
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ES1CLHRTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
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RS1JLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 800MA SUBSMA |
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P4KE12AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 25A Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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P4KE12A B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL |
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P4KE12A A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL |
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P4KE12AHR1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL |
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P4KE12AHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL |
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P4KE12AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 25A Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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SS36LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS36LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
auf Bestellung 27042 Stücke: Lieferzeit 10-14 Tag (e) |
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| HERA808G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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HERAF808G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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HS1DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 6988 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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HS1JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 6145 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1GAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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HS1GAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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HS2JFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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HS2JFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 6957 Stücke: Lieferzeit 10-14 Tag (e) |
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HS2GAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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HS2GAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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HS2DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
Produkt ist nicht verfügbar |
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HS2DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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HS2JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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HS2JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 3425 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1KFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
Produkt ist nicht verfügbar |
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HS1KFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 1398 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1KAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
Produkt ist nicht verfügbar |
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HS1KAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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HS2KFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
Produkt ist nicht verfügbar |
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HS2KFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 6800 Stücke: Lieferzeit 10-14 Tag (e) |
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HS2KAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
Produkt ist nicht verfügbar |
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HS2KAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 3485 Stücke: Lieferzeit 10-14 Tag (e) |
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HERAF1606G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX584B13 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 150MW SOD523F |
Produkt ist nicht verfügbar |
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BZX584B6V2 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 150MW SOD523F |
Produkt ist nicht verfügbar |
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BZX584B10 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 150MW SOD523F |
Produkt ist nicht verfügbar |
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BZX584B9V1 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 9.1V 150MW SOD523F |
Produkt ist nicht verfügbar |
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BZX584B5V1 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 150MW SOD523F |
Produkt ist nicht verfügbar |
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BZX584B4V7 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.7V 150MW SOD523F |
Produkt ist nicht verfügbar |
| UDZS27B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
Description: DIODE ZENER 27V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
Produkt ist nicht verfügbar
| UDZS22B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 17 V
Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 17 V
Produkt ist nicht verfügbar
| UDZS33B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 200MW SOD323F
Description: DIODE ZENER 33V 200MW SOD323F
Produkt ist nicht verfügbar
| UDZS24B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 19 V
Description: DIODE ZENER 24V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 19 V
Produkt ist nicht verfügbar
| UDZS3V9B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Description: DIODE ZENER 3.9V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Produkt ist nicht verfügbar
| UDZS33B R9G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 25 V
Description: DIODE ZENER 33V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 25 V
Produkt ist nicht verfügbar
| UDZS5V1B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1.8 µA @ 2 V
Description: DIODE ZENER 5.1V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1.8 µA @ 2 V
Produkt ist nicht verfügbar
| UDZS16B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 12 V
Description: DIODE ZENER 16V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 12 V
Produkt ist nicht verfügbar
| UDZS20B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 15 V
Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 15 V
Produkt ist nicht verfügbar
| UDZS7V5B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 900 nA @ 4 V
Description: DIODE ZENER 7.5V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 900 nA @ 4 V
Produkt ist nicht verfügbar
| UDZS12B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 9 V
Description: DIODE ZENER 12V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 9 V
Produkt ist nicht verfügbar
| UDZS6V8B RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD323F
Description: DIODE ZENER 6.8V 200MW SOD323F
Produkt ist nicht verfügbar
| SMCJ40A R7 |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
| SMCJ40AHM6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40VWM 64.5VC DO214AB
Description: TVS DIODE 40VWM 64.5VC DO214AB
Produkt ist nicht verfügbar
| ES1CLHRHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
| ES1CHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
Description: DIODE GEN PURP 150V 1A DO214AC
Produkt ist nicht verfügbar
| ES1CL RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
| ES1CLHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
| ES1CLHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
| ES1CLHRTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
| RS1JLHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 800MA SUBSMA
Description: DIODE GEN PURP 600V 800MA SUBSMA
Produkt ist nicht verfügbar
| P4KE12AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| P4KE12A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Produkt ist nicht verfügbar
| P4KE12A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Produkt ist nicht verfügbar
| P4KE12AHR1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Produkt ist nicht verfügbar
| P4KE12AHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Produkt ist nicht verfügbar
| P4KE12AHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| SS36LWH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.13 EUR |
| SS36LWH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 27042 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 0.69 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.15 EUR |
| HERA808G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.65 EUR |
| 50+ | 1.33 EUR |
| 100+ | 1.06 EUR |
| HERAF808G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.67 EUR |
| 50+ | 1.34 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.9 EUR |
| HS1DAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
| HS1DAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 6988 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 0.72 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.16 EUR |
| 5000+ | 0.15 EUR |
| HS1JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
| HS1JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 6145 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 0.72 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.16 EUR |
| 5000+ | 0.15 EUR |
| HS1GAL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
| HS1GAL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 0.69 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.15 EUR |
| HS2JFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
| HS2JFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 6957 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.63 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| 5000+ | 0.16 EUR |
| HS2GAL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
| HS2GAL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
| HS2DAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
| HS2DAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.63 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| 5000+ | 0.16 EUR |
| HS2JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
| HS2JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 3425 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 0.58 EUR |
| 39+ | 0.46 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.17 EUR |
| HS1KFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
| HS1KFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 1398 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.65 EUR |
| 39+ | 0.46 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| HS1KAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
| HS1KAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 0.7 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| 5000+ | 0.12 EUR |
| HS2KFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
| HS2KFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 0.74 EUR |
| 34+ | 0.52 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.16 EUR |
| HS2KAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
| HS2KAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 3485 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 0.7 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.16 EUR |
| HERAF1606G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.83 EUR |
| 50+ | 1.47 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.81 EUR |
| BZX584B13 RKG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 150MW SOD523F
Description: DIODE ZENER 13V 150MW SOD523F
Produkt ist nicht verfügbar
| BZX584B6V2 RKG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Description: DIODE ZENER 6.2V 150MW SOD523F
Produkt ist nicht verfügbar
| BZX584B10 RKG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 150MW SOD523F
Description: DIODE ZENER 10V 150MW SOD523F
Produkt ist nicht verfügbar
| BZX584B9V1 RSG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 150MW SOD523F
Description: DIODE ZENER 9.1V 150MW SOD523F
Produkt ist nicht verfügbar
| BZX584B5V1 RKG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
Description: DIODE ZENER 5.1V 150MW SOD523F
Produkt ist nicht verfügbar
| BZX584B4V7 RKG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 150MW SOD523F
Description: DIODE ZENER 4.7V 150MW SOD523F
Produkt ist nicht verfügbar