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SMAJ78HR3G SMAJ78HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 78VWM 139VC DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
27+0.66 EUR
100+0.45 EUR
500+0.34 EUR
Mindestbestellmenge: 22
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SMAJ78CHR3G SMAJ78CHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 78VWM 139VC DO214AC
auf Bestellung 3600 Stücke:
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1800+0.33 EUR
3600+0.3 EUR
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SMAJ78CHR3G SMAJ78CHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 78VWM 139VC DO214AC
auf Bestellung 3600 Stücke:
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21+0.84 EUR
25+0.72 EUR
100+0.54 EUR
500+0.42 EUR
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SMAJ78CAHR3G SMAJ78CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 78VWM 126VC DO214AC
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SMAJ78CAHR3G SMAJ78CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 78VWM 126VC DO214AC
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
25+0.73 EUR
100+0.54 EUR
500+0.43 EUR
Mindestbestellmenge: 21
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SMAJ78CAH SMAJ78CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 78VWM 126VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ78CA R3G SMAJ78CA R3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 78VWM 126VC DO214AC
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UDZS6V2B RRG UDZS6V2B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 6.2V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 3 V
Produkt ist nicht verfügbar
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UDZS13B RRG UDZS13B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 13V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 10 V
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UDZS18B RRG UDZS18B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 18V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 13 V
Produkt ist nicht verfügbar
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UDZS36B RRG UDZS36B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 36V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 27 V
Produkt ist nicht verfügbar
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UDZS27B RRG UDZS27B RRG Taiwan Semiconductor Corporation UDZS3V6B SERIES_H2212.pdf Description: DIODE ZENER 27V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
Produkt ist nicht verfügbar
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UDZS22B RRG UDZS22B RRG Taiwan Semiconductor Corporation UDZS3V6B SERIES_H2212.pdf Description: DIODE ZENER 22V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 17 V
Produkt ist nicht verfügbar
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UDZS33B RRG UDZS33B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_G1804.pdf Description: DIODE ZENER 33V 200MW SOD323F
Produkt ist nicht verfügbar
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UDZS3V9B RRG UDZS3V9B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 3.9V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Produkt ist nicht verfügbar
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UDZS33B R9G UDZS33B R9G Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 33V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 25 V
Produkt ist nicht verfügbar
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UDZS5V1B RRG UDZS5V1B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 5.1V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1.8 µA @ 2 V
Produkt ist nicht verfügbar
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UDZS20B RRG UDZS20B RRG Taiwan Semiconductor Corporation UDZS3V6B SERIES_H2212.pdf Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 15 V
Produkt ist nicht verfügbar
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UDZS7V5B RRG UDZS7V5B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 7.5V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 900 nA @ 4 V
Produkt ist nicht verfügbar
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UDZS12B RRG UDZS12B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 12V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 9 V
Produkt ist nicht verfügbar
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UDZS6V8B RRG UDZS6V8B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_G1804.pdf Description: DIODE ZENER 6.8V 200MW SOD323F
Produkt ist nicht verfügbar
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SMCJ40A R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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SMCJ40AHM6G SMCJ40AHM6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 40VWM 64.5VC DO214AB
Produkt ist nicht verfügbar
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ES1CLHRHG ES1CLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1CHM2G ES1CHM2G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 150V 1A DO214AC
Produkt ist nicht verfügbar
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ES1CL RUG ES1CL RUG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHM2G ES1CLHM2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1CLHRQG ES1CLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHRTG ES1CLHRTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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RS1JLHR3G RS1JLHR3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 600V 800MA SUBSMA
Produkt ist nicht verfügbar
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P4KE12AH P4KE12AH Taiwan Semiconductor Corporation Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4KE12A B0G P4KE12A B0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
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P4KE12A A0G P4KE12A A0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
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P4KE12AHR1G P4KE12AHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
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P4KE12AHB0G P4KE12AHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
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P4KE12AHA0G P4KE12AHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SS36LWH SS36LWH Taiwan Semiconductor Corporation SS34LWH SERIES_A2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SS36LWH SS36LWH Taiwan Semiconductor Corporation SS34LWH SERIES_A2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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HERA808G Taiwan Semiconductor Corporation HERA801G SERIES_J2103.pdf Description: DIODE STANDARD 1000V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1295 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
50+1.15 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.76 EUR
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HERAF808G HERAF808G Taiwan Semiconductor Corporation HERAF801G SERIES_K2105.pdf Description: DIODE GEN PURP 1KV 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1000 Stücke:
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100+1 EUR
500+0.8 EUR
1000+0.74 EUR
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HS1DAL HS1DAL Taiwan Semiconductor Corporation pdf.php?pn=HS1DAL Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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HS1DAL HS1DAL Taiwan Semiconductor Corporation pdf.php?pn=HS1DAL Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 6988 Stücke:
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25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.15 EUR
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HS1JAL HS1JAL Taiwan Semiconductor Corporation pdf.php?pn=HS1JAL Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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HS1JAL HS1JAL Taiwan Semiconductor Corporation pdf.php?pn=HS1JAL Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 6145 Stücke:
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25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.15 EUR
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HS1GAL HS1GAL Taiwan Semiconductor Corporation HS1DAL SERIES_D2103.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GAL HS1GAL Taiwan Semiconductor Corporation HS1DAL SERIES_D2103.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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HS2JFS HS2JFS Taiwan Semiconductor Corporation pdf.php?pn=HS2JFS Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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HS2JFS HS2JFS Taiwan Semiconductor Corporation pdf.php?pn=HS2JFS Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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HS2GAL HS2GAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE STANDARD 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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HS2GAL HS2GAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE STANDARD 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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HS2DAL HS2DAL Taiwan Semiconductor Corporation pdf.php?pn=HS2DAL Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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HS2DAL HS2DAL Taiwan Semiconductor Corporation pdf.php?pn=HS2DAL Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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HS2JAL HS2JAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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HS2JAL HS2JAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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HS1KFS HS1KFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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HS1KFS HS1KFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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HS1KAL HS1KAL Taiwan Semiconductor Corporation HS1DAL SERIES_D2103.pdf Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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HS1KAL HS1KAL Taiwan Semiconductor Corporation HS1DAL SERIES_D2103.pdf Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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HS2KFS HS2KFS Taiwan Semiconductor Corporation pdf.php?pn=HS2KFS Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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HS2KFS HS2KFS Taiwan Semiconductor Corporation pdf.php?pn=HS2KFS Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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SMAJ78HR3G SMAJ%20SERIES_U2102.pdf
SMAJ78HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 139VC DO214AC
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22+0.81 EUR
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SMAJ78CHR3G SMAJ%20SERIES_U2102.pdf
SMAJ78CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 139VC DO214AC
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1800+0.33 EUR
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SMAJ78CHR3G SMAJ%20SERIES_U2102.pdf
SMAJ78CHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 139VC DO214AC
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21+0.84 EUR
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SMAJ78CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ78CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AC
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SMAJ78CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ78CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AC
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Anzahl Preis
21+0.84 EUR
25+0.73 EUR
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500+0.43 EUR
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SMAJ78CAH SMAJH SERIES_A2102.pdf
SMAJ78CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ78CA R3G SMAJ%20SERIES_U2102.pdf
SMAJ78CA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AC
Produkt ist nicht verfügbar
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UDZS6V2B RRG UDZS3V6B%20SERIES_H2212.pdf
UDZS6V2B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 3 V
Produkt ist nicht verfügbar
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UDZS13B RRG UDZS3V6B%20SERIES_H2212.pdf
UDZS13B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 10 V
Produkt ist nicht verfügbar
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UDZS18B RRG UDZS3V6B%20SERIES_H2212.pdf
UDZS18B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 13 V
Produkt ist nicht verfügbar
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UDZS36B RRG UDZS3V6B%20SERIES_H2212.pdf
UDZS36B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 27 V
Produkt ist nicht verfügbar
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UDZS27B RRG UDZS3V6B SERIES_H2212.pdf
UDZS27B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
Produkt ist nicht verfügbar
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UDZS22B RRG UDZS3V6B SERIES_H2212.pdf
UDZS22B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 17 V
Produkt ist nicht verfügbar
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UDZS33B RRG UDZS3V6B%20SERIES_G1804.pdf
UDZS33B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 200MW SOD323F
Produkt ist nicht verfügbar
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UDZS3V9B RRG UDZS3V6B%20SERIES_H2212.pdf
UDZS3V9B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Produkt ist nicht verfügbar
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UDZS33B R9G UDZS3V6B%20SERIES_H2212.pdf
UDZS33B R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 25 V
Produkt ist nicht verfügbar
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UDZS5V1B RRG UDZS3V6B%20SERIES_H2212.pdf
UDZS5V1B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1.8 µA @ 2 V
Produkt ist nicht verfügbar
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UDZS20B RRG UDZS3V6B SERIES_H2212.pdf
UDZS20B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UDZS7V5B RRG UDZS3V6B%20SERIES_H2212.pdf
UDZS7V5B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 900 nA @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UDZS12B RRG UDZS3V6B%20SERIES_H2212.pdf
UDZS12B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 9 V
Produkt ist nicht verfügbar
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UDZS6V8B RRG UDZS3V6B%20SERIES_G1804.pdf
UDZS6V8B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD323F
Produkt ist nicht verfügbar
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SMCJ40A R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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SMCJ40AHM6G SMCJ SERIES_R2004.pdf
SMCJ40AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40VWM 64.5VC DO214AB
Produkt ist nicht verfügbar
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ES1CLHRHG ES1AL%20SERIES_L2103.pdf
ES1CLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1CHM2G ES1A%20SERIES_O2112.pdf
ES1CHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
Produkt ist nicht verfügbar
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ES1CL RUG ES1AL%20SERIES_L2103.pdf
ES1CL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1CLHM2G ES1AL%20SERIES_L2103.pdf
ES1CLHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1CLHRQG ES1AL%20SERIES_L2103.pdf
ES1CLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
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ES1CLHRTG ES1AL%20SERIES_L2103.pdf
ES1CLHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
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RS1JLHR3G RS1AL%20SERIES_N2103.pdf
RS1JLHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 800MA SUBSMA
Produkt ist nicht verfügbar
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P4KE12AH
P4KE12AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4KE12A B0G P4KE%20SERIES_N2104.pdf
P4KE12A B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Produkt ist nicht verfügbar
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P4KE12A A0G P4KE%20SERIES_N2104.pdf
P4KE12A A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Produkt ist nicht verfügbar
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P4KE12AHR1G P4KE%20SERIES_N2104.pdf
P4KE12AHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Produkt ist nicht verfügbar
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P4KE12AHB0G P4KE%20SERIES_N2104.pdf
P4KE12AHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Produkt ist nicht verfügbar
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P4KE12AHA0G P4KE%20SERIES_N2104.pdf
P4KE12AHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SS36LWH SS34LWH SERIES_A2103.pdf
SS36LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SS36LWH SS34LWH SERIES_A2103.pdf
SS36LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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HERA808G HERA801G SERIES_J2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
50+1.15 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.76 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
HERAF808G HERAF801G SERIES_K2105.pdf
HERAF808G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
50+1.11 EUR
100+1 EUR
500+0.8 EUR
1000+0.74 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
HS1DAL pdf.php?pn=HS1DAL
HS1DAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1DAL pdf.php?pn=HS1DAL
HS1DAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 6988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
HS1JAL pdf.php?pn=HS1JAL
HS1JAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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HS1JAL pdf.php?pn=HS1JAL
HS1JAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 6145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
HS1GAL HS1DAL SERIES_D2103.pdf
HS1GAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GAL HS1DAL SERIES_D2103.pdf
HS1GAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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HS2JFS pdf.php?pn=HS2JFS
HS2JFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2JFS pdf.php?pn=HS2JFS
HS2JFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 6957 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
36+0.49 EUR
100+0.29 EUR
500+0.27 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
HS2GAL HS2DAL SERIES_C2103.pdf
HS2GAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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HS2GAL HS2DAL SERIES_C2103.pdf
HS2GAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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HS2DAL pdf.php?pn=HS2DAL
HS2DAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2DAL pdf.php?pn=HS2DAL
HS2DAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
36+0.49 EUR
100+0.29 EUR
500+0.27 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
HS2JAL HS2DAL SERIES_C2103.pdf
HS2JAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2JAL HS2DAL SERIES_C2103.pdf
HS2JAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 3425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
40+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
HS1KFS HS1DFS SERIES_C2103.pdf
HS1KFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1KFS HS1DFS SERIES_C2103.pdf
HS1KFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 1398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
64+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
HS1KAL HS1DAL SERIES_D2103.pdf
HS1KAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1KAL HS1DAL SERIES_D2103.pdf
HS1KAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2KFS pdf.php?pn=HS2KFS
HS2KFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS2KFS pdf.php?pn=HS2KFS
HS2KFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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