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1N4763AH 1N4763AH Taiwan Semiconductor Corporation pdf.php?pn=1N4763A Description: DIODE ZENER 91V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6KE400AH P6KE400AH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1SMA5933 1SMA5933 Taiwan Semiconductor Corporation 1SMA5926 SERIES_L2102.pdf Description: DIODE ZENER 22V 1.5W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.13 EUR
Mindestbestellmenge: 7500
1SMA5933H 1SMA5933H Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 22V 1.5W DO214AC
Produkt ist nicht verfügbar
TSM056NH04LCR RLG TSM056NH04LCR RLG Taiwan Semiconductor Corporation Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.83 EUR
Mindestbestellmenge: 5000
TSM056NH04LCR RLG TSM056NH04LCR RLG Taiwan Semiconductor Corporation Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
11+ 1.71 EUR
100+ 1.33 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 9
TSM032NH04LCR RLG TSM032NH04LCR RLG Taiwan Semiconductor Corporation Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.18 EUR
Mindestbestellmenge: 2500
TSM032NH04LCR RLG TSM032NH04LCR RLG Taiwan Semiconductor Corporation Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 4220 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
10+ 2.17 EUR
100+ 1.73 EUR
500+ 1.46 EUR
1000+ 1.24 EUR
Mindestbestellmenge: 7
TSM070NH04LCR RLG TSM070NH04LCR RLG Taiwan Semiconductor Corporation Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Produkt ist nicht verfügbar
TSM070NH04LCR RLG TSM070NH04LCR RLG Taiwan Semiconductor Corporation Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
auf Bestellung 4361 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
13+ 1.4 EUR
100+ 1.09 EUR
500+ 0.92 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 11
TSM019NH04LCR RLG TSM019NH04LCR RLG Taiwan Semiconductor Corporation Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Produkt ist nicht verfügbar
TSM019NH04LCR RLG TSM019NH04LCR RLG Taiwan Semiconductor Corporation Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.82 EUR
10+ 4.01 EUR
100+ 3.19 EUR
500+ 2.7 EUR
1000+ 2.29 EUR
Mindestbestellmenge: 4
SRT19 A0G SRT19 A0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19 R0G SRT19 R0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19 A1G SRT19 A1G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19HA1G SRT19HA1G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19HA0G SRT19HA0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19 SRT19 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
SRT19HR0G SRT19HR0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19H SRT19H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
BYG23M BYG23M Taiwan Semiconductor Corporation pdf.php?pn=BYG23M Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.13 EUR
Mindestbestellmenge: 7500
BZX55B62 A0G BZX55B62 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 62V 500MW DO35
Produkt ist nicht verfügbar
BZX55B39 A0G BZX55B39 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 39V 500MW DO35
Produkt ist nicht verfügbar
BZX55B3V0 A0G BZX55B3V0 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 3V 500MW DO35
Produkt ist nicht verfügbar
BZX55B33 A0G BZX55B33 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
BZX55B8V2 A0G BZX55B8V2 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 8.2V 500MW DO35
Produkt ist nicht verfügbar
BZX55B18 A0G BZX55B18 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 18V 500MW DO35
Produkt ist nicht verfügbar
BZX55B22 A0G BZX55B22 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
BZX55B13 A0G BZX55B13 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 13V 500MW DO35
Produkt ist nicht verfügbar
BZX55B20 A0G BZX55B20 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 20V 500MW DO35
Produkt ist nicht verfügbar
BZX55B2V4 A0G BZX55B2V4 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
BZX55B3V9 A0G BZX55B3V9 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 3.9V 500MW DO35
Produkt ist nicht verfügbar
BZX55B4V3 A0G BZX55B4V3 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 4.3V 500MW DO35
Produkt ist nicht verfügbar
BZX55B56 A0G BZX55B56 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 56V 500MW DO35
Produkt ist nicht verfügbar
SMDJ70A M6G SMDJ70A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMDJ70AH SMDJ70AH Taiwan Semiconductor Corporation pdf.php?pn=SMDJ70AH Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMDJ70A SMDJ70A Taiwan Semiconductor Corporation pdf.php?pn=SMDJ70A Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMDJ70AHM6G SMDJ70AHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
BZX55B30 A0G BZX55B30 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 30V 500MW DO35
Produkt ist nicht verfügbar
SMBJ33CAH SMBJ33CAH Taiwan Semiconductor Corporation Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMBJ33CAHR5G SMBJ33CAHR5G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
Produkt ist nicht verfügbar
SS24M SS24M Taiwan Semiconductor Corporation SS22M SERIES_M2103.pdf Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
12000+0.11 EUR
60000+ 0.091 EUR
Mindestbestellmenge: 12000
SS24M SS24M Taiwan Semiconductor Corporation SS22M SERIES_M2103.pdf Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 87415 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
5000+ 0.13 EUR
Mindestbestellmenge: 24
SS24LWH SS24LWH Taiwan Semiconductor Corporation SS24LWH SERIES_B2301.pdf Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.11 EUR
Mindestbestellmenge: 10000
SS24LWH SS24LWH Taiwan Semiconductor Corporation SS24LWH SERIES_B2301.pdf Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 25176 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 25
1.5KE82AH 1.5KE82AH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
GBU2504 GBU2504 Taiwan Semiconductor Corporation GBU2504 SERIES_E2205.pdf Description: BRIDGE RECT 1PHASE 400V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 988 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
10+ 1.91 EUR
100+ 1.49 EUR
500+ 1.26 EUR
Mindestbestellmenge: 8
RS1KLS RS1KLS Taiwan Semiconductor Corporation RS1JLS SERIES_E2304.pdf Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.082 EUR
Mindestbestellmenge: 10000
RS1KLS RS1KLS Taiwan Semiconductor Corporation RS1JLS SERIES_E2304.pdf Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 31215 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
41+ 0.43 EUR
100+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
5000+ 0.099 EUR
Mindestbestellmenge: 28
SS26LWH SS26LWH Taiwan Semiconductor Corporation SS24LWH SERIES_B2301.pdf Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.084 EUR
Mindestbestellmenge: 10000
SS26LWH SS26LWH Taiwan Semiconductor Corporation SS24LWH SERIES_B2301.pdf Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 35805 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 25
MBRF1060CT MBRF1060CT Taiwan Semiconductor Corporation MBRF1060CT%20N0822%20REV.B.pdf Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.51 EUR
14+ 1.31 EUR
100+ 0.91 EUR
500+ 0.76 EUR
Mindestbestellmenge: 12
MBRF1545CT MBRF1545CT Taiwan Semiconductor Corporation MBRF1535CT SERIES_J2105.pdf Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 5938 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
50+ 1.24 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.68 EUR
2000+ 0.64 EUR
5000+ 0.61 EUR
Mindestbestellmenge: 12
S15MCHV7G S15MCHV7G Taiwan Semiconductor Corporation S15GC%20SERIES_C2102.pdf Description: DIODE GEN PURP 1KV 15A DO214AB
auf Bestellung 6560 Stücke:
Lieferzeit 10-14 Tag (e)
850+0.87 EUR
1700+ 0.7 EUR
2550+ 0.63 EUR
5950+ 0.59 EUR
Mindestbestellmenge: 850
S15MCHV7G S15MCHV7G Taiwan Semiconductor Corporation S15GC%20SERIES_C2102.pdf Description: DIODE GEN PURP 1KV 15A DO214AB
auf Bestellung 6650 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.64 EUR
13+ 1.44 EUR
100+ 1.1 EUR
Mindestbestellmenge: 11
S15GCHV7G S15GCHV7G Taiwan Semiconductor Corporation S15GC%20SERIES_C2102.pdf Description: DIODE GEN PURP 400V 15A DO214AB
Produkt ist nicht verfügbar
S15GCHV7G S15GCHV7G Taiwan Semiconductor Corporation S15GC%20SERIES_C2102.pdf Description: DIODE GEN PURP 400V 15A DO214AB
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.64 EUR
13+ 1.44 EUR
100+ 1.1 EUR
Mindestbestellmenge: 11
TPAR3J S1G TPAR3J S1G Taiwan Semiconductor Corporation TPAR3D%20SERIES_C2103.pdf Description: DIODE AVALANCHE 600V 3A TO277A
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.84 EUR
Mindestbestellmenge: 1500
TPAR3J S1G TPAR3J S1G Taiwan Semiconductor Corporation TPAR3D%20SERIES_C2103.pdf Description: DIODE AVALANCHE 600V 3A TO277A
auf Bestellung 2849 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
12+ 1.5 EUR
100+ 1.17 EUR
500+ 0.96 EUR
Mindestbestellmenge: 11
TPAU3J S1G TPAU3J S1G Taiwan Semiconductor Corporation TPAU3D%20SERIES_C2103.pdf Description: DIODE AVALANCHE 600V 3A TO277A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.32 EUR
3000+ 1.24 EUR
Mindestbestellmenge: 1500
1N4763AH pdf.php?pn=1N4763A
1N4763AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 91V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6KE400AH P6KE SERIES_P2203.pdf
P6KE400AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1SMA5933 1SMA5926 SERIES_L2102.pdf
1SMA5933
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.13 EUR
Mindestbestellmenge: 7500
1SMA5933H 1SMA5926%20SERIES_L2102.pdf
1SMA5933H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Produkt ist nicht verfügbar
TSM056NH04LCR RLG
TSM056NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.83 EUR
Mindestbestellmenge: 5000
TSM056NH04LCR RLG
TSM056NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.09 EUR
11+ 1.71 EUR
100+ 1.33 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 9
TSM032NH04LCR RLG
TSM032NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.18 EUR
Mindestbestellmenge: 2500
TSM032NH04LCR RLG
TSM032NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 4220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.62 EUR
10+ 2.17 EUR
100+ 1.73 EUR
500+ 1.46 EUR
1000+ 1.24 EUR
Mindestbestellmenge: 7
TSM070NH04LCR RLG
TSM070NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Produkt ist nicht verfügbar
TSM070NH04LCR RLG
TSM070NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
auf Bestellung 4361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.71 EUR
13+ 1.4 EUR
100+ 1.09 EUR
500+ 0.92 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 11
TSM019NH04LCR RLG
TSM019NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Produkt ist nicht verfügbar
TSM019NH04LCR RLG
TSM019NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.82 EUR
10+ 4.01 EUR
100+ 3.19 EUR
500+ 2.7 EUR
1000+ 2.29 EUR
Mindestbestellmenge: 4
SRT19 A0G SRT12%20SERIES_I2104.pdf
SRT19 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19 R0G SRT12%20SERIES_I2104.pdf
SRT19 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19 A1G SRT12%20SERIES_I2104.pdf
SRT19 A1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19HA1G SRT12%20SERIES_I2104.pdf
SRT19HA1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19HA0G SRT12%20SERIES_I2104.pdf
SRT19HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19
SRT19
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
SRT19HR0G SRT12%20SERIES_I2104.pdf
SRT19HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19H
SRT19H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
BYG23M pdf.php?pn=BYG23M
BYG23M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.13 EUR
Mindestbestellmenge: 7500
BZX55B62 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B62 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 500MW DO35
Produkt ist nicht verfügbar
BZX55B39 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B39 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW DO35
Produkt ist nicht verfügbar
BZX55B3V0 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B3V0 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW DO35
Produkt ist nicht verfügbar
BZX55B33 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B33 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
BZX55B8V2 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B8V2 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW DO35
Produkt ist nicht verfügbar
BZX55B18 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B18 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW DO35
Produkt ist nicht verfügbar
BZX55B22 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B22 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
BZX55B13 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B13 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW DO35
Produkt ist nicht verfügbar
BZX55B20 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B20 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW DO35
Produkt ist nicht verfügbar
BZX55B2V4 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B2V4 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
BZX55B3V9 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B3V9 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Produkt ist nicht verfügbar
BZX55B4V3 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B4V3 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Produkt ist nicht verfügbar
BZX55B56 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B56 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Produkt ist nicht verfügbar
SMDJ70A M6G SMDJ%20SERIES_I2104.pdf
SMDJ70A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMDJ70AH pdf.php?pn=SMDJ70AH
SMDJ70AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMDJ70A pdf.php?pn=SMDJ70A
SMDJ70A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMDJ70AHM6G SMDJH%20SERIES_B2104.pdf
SMDJ70AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
BZX55B30 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B30 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW DO35
Produkt ist nicht verfügbar
SMBJ33CAH
SMBJ33CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMBJ33CAHR5G SMBJ%20SERIES_R2104.pdf
SMBJ33CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Produkt ist nicht verfügbar
SS24M SS22M SERIES_M2103.pdf
SS24M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12000+0.11 EUR
60000+ 0.091 EUR
Mindestbestellmenge: 12000
SS24M SS22M SERIES_M2103.pdf
SS24M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 87415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
5000+ 0.13 EUR
Mindestbestellmenge: 24
SS24LWH SS24LWH SERIES_B2301.pdf
SS24LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.11 EUR
Mindestbestellmenge: 10000
SS24LWH SS24LWH SERIES_B2301.pdf
SS24LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 25176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 25
1.5KE82AH
1.5KE82AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
GBU2504 GBU2504 SERIES_E2205.pdf
GBU2504
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.34 EUR
10+ 1.91 EUR
100+ 1.49 EUR
500+ 1.26 EUR
Mindestbestellmenge: 8
RS1KLS RS1JLS SERIES_E2304.pdf
RS1KLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.082 EUR
Mindestbestellmenge: 10000
RS1KLS RS1JLS SERIES_E2304.pdf
RS1KLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 31215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
41+ 0.43 EUR
100+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
5000+ 0.099 EUR
Mindestbestellmenge: 28
SS26LWH SS24LWH SERIES_B2301.pdf
SS26LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.084 EUR
Mindestbestellmenge: 10000
SS26LWH SS24LWH SERIES_B2301.pdf
SS26LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 35805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 25
MBRF1060CT MBRF1060CT%20N0822%20REV.B.pdf
MBRF1060CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.51 EUR
14+ 1.31 EUR
100+ 0.91 EUR
500+ 0.76 EUR
Mindestbestellmenge: 12
MBRF1545CT MBRF1535CT SERIES_J2105.pdf
MBRF1545CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 5938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
50+ 1.24 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.68 EUR
2000+ 0.64 EUR
5000+ 0.61 EUR
Mindestbestellmenge: 12
S15MCHV7G S15GC%20SERIES_C2102.pdf
S15MCHV7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 15A DO214AB
auf Bestellung 6560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
850+0.87 EUR
1700+ 0.7 EUR
2550+ 0.63 EUR
5950+ 0.59 EUR
Mindestbestellmenge: 850
S15MCHV7G S15GC%20SERIES_C2102.pdf
S15MCHV7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 15A DO214AB
auf Bestellung 6650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.64 EUR
13+ 1.44 EUR
100+ 1.1 EUR
Mindestbestellmenge: 11
S15GCHV7G S15GC%20SERIES_C2102.pdf
S15GCHV7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 15A DO214AB
Produkt ist nicht verfügbar
S15GCHV7G S15GC%20SERIES_C2102.pdf
S15GCHV7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 15A DO214AB
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.64 EUR
13+ 1.44 EUR
100+ 1.1 EUR
Mindestbestellmenge: 11
TPAR3J S1G TPAR3D%20SERIES_C2103.pdf
TPAR3J S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.84 EUR
Mindestbestellmenge: 1500
TPAR3J S1G TPAR3D%20SERIES_C2103.pdf
TPAR3J S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A
auf Bestellung 2849 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.67 EUR
12+ 1.5 EUR
100+ 1.17 EUR
500+ 0.96 EUR
Mindestbestellmenge: 11
TPAU3J S1G TPAU3D%20SERIES_C2103.pdf
TPAU3J S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+1.32 EUR
3000+ 1.24 EUR
Mindestbestellmenge: 1500
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