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PGSMAJ28CAHR2G PGSMAJ28CAHR2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
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PGSMAJ28CA M2G PGSMAJ28CA M2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ28CA F2G PGSMAJ28CA F2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ28CA R2G PGSMAJ28CA R2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ28CA F3G PGSMAJ28CA F3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: Automotive
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PGSMAJ28CA F4G PGSMAJ28CA F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
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PGSMAJ28CA E2G PGSMAJ28CA E2G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ28CAHF2G PGSMAJ28CAHF2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
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RS3K RS3K Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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UF1JLW UF1JLW Taiwan Semiconductor Corporation UF1DLW SERIES_C2103.pdf Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UF1JLW UF1JLW Taiwan Semiconductor Corporation UF1DLW SERIES_C2103.pdf Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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SF35GH SF35GH Taiwan Semiconductor Corporation SF31G SERIES_H2105.pdf Description: DIODE STANDARD 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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SF35G SF35G Taiwan Semiconductor Corporation SF31G SERIES_H2105.pdf Description: DIODE STANDARD 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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TSM2301ACX RFG TSM2301ACX RFG Taiwan Semiconductor Corporation TSM2301A_C15.pdf Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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TSM2301ACX RFG TSM2301ACX RFG Taiwan Semiconductor Corporation TSM2301A_C15.pdf Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
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BYG20D BYG20D Taiwan Semiconductor Corporation BYG20D SERIES_F2102.pdf Description: DIODE STANDARD 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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HER606G HER606G Taiwan Semiconductor Corporation HER601G SERIES_H2104.pdf Description: DIODE STANDARD 600V 6A R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HS1MLW HS1MLW Taiwan Semiconductor Corporation HS1DLW SERIES_C2103.pdf Description: DIODE STANDARD 1000V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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HS1MLW HS1MLW Taiwan Semiconductor Corporation HS1DLW SERIES_C2103.pdf Description: DIODE STANDARD 1000V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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US1KH US1KH Taiwan Semiconductor Corporation US1AH SERIES_A2102.pdf Description: DIODE STANDARD 800V 1A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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TSM025NB04CR RLG TSM025NB04CR RLG Taiwan Semiconductor Corporation TSMxxxNB0x_Newsletter.pdf Description: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
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TSM025NB04CR RLG TSM025NB04CR RLG Taiwan Semiconductor Corporation TSMxxxNB0x_Newsletter.pdf Description: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
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TSM025NB04LCR RLG TSM025NB04LCR RLG Taiwan Semiconductor Corporation TSM025NB04LCR_B1804.pdf Description: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 20 V
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TSM025NB04LCR RLG TSM025NB04LCR RLG Taiwan Semiconductor Corporation TSM025NB04LCR_B1804.pdf Description: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 20 V
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1N5404GH 1N5404GH Taiwan Semiconductor Corporation 1N5400G SERIES_K2105.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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GBU605 GBU605 Taiwan Semiconductor Corporation GBU601 SERIES_N2103.pdf Description: BRIDGE RECT 1PHASE 600V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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GBU605H GBU605H Taiwan Semiconductor Corporation GBU601 SERIES_N2103.pdf Description: BRIDGE RECT 1PHASE 600V 6A GBU
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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SMCJ28CA M6G SMCJ28CA M6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
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SMCJ28CA R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SMCJ28CA M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SMCJ28CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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BZD27C160P BZD27C160P Taiwan Semiconductor Corporation BZD27C SERIES_AB2103.pdf Description: DIODE ZENER 162V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Not For New Designs
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 162 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5.55%
Packaging: Tape & Reel (TR)
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RS1GFSH RS1GFSH Taiwan Semiconductor Corporation RS1DFSH SERIES_B2304.pdf Description: DIODE STANDARD 400V 1A SOD128
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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RS1GFS RS1GFS Taiwan Semiconductor Corporation RS1DFS SERIES_D2304.pdf Description: DIODE STANDARD 400V 1A SOD128
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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RS1GH RS1GH Taiwan Semiconductor Corporation RS1AH SERIES_B2304.pdf Description: DIODE STANDARD 400V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
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P4KE170AH P4KE170AH Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 145VWM 234VC DO204AL
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1.5KE170CAH 1.5KE170CAH Taiwan Semiconductor Corporation Description: TVS DIODE 145VWM 234VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TQL820CA14V33 RLG TQL820CA14V33 RLG Taiwan Semiconductor Corporation TQL820CA14V33_A2111.pdf Description: IC REG LINEAR 3.3V 14-TSSOP-EP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 77 µA
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 14-TSSOP-EP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.34V @ 200mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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TQL820CA14V33 RLG TQL820CA14V33 RLG Taiwan Semiconductor Corporation TQL820CA14V33_A2111.pdf Description: IC REG LINEAR 3.3V 14-TSSOP-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 77 µA
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 14-TSSOP-EP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.34V @ 200mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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P4SMA82CAH P4SMA82CAH Taiwan Semiconductor Corporation P4SMAH SERIES_A2102.pdf Description: TVS DIODE 70.1VWM 113V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMF12AH SMF12AH Taiwan Semiconductor Corporation SMF5.0AH SERIES_A2103.pdf Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE20CAH Taiwan Semiconductor Corporation Description: TVS DIODE 17.1VWM 27.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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P6KE12CAH P6KE12CAH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 10.2VWM 16.7V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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MUR190 MUR190 Taiwan Semiconductor Corporation MUR160 SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
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MUR190H MUR190H Taiwan Semiconductor Corporation Description: DIODE GEN PURP 900V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
Qualification: AEC-Q101
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MUR190 B0G MUR190 B0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AC
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MUR190A R1G MUR190A R1G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AL
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MUR190 A0G MUR190 A0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AC
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MUR190A B0G MUR190A B0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AL
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MUR190AHR1G MUR190AHR1G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AL
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MUR190AHR0G MUR190AHR0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AL
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MUR190HB0G MUR190HB0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AC
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MUR190HA0G MUR190HA0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AC
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MUR190AHB0G MUR190AHB0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AL
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MUR190AHA0G MUR190AHA0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AL
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MUR190A A0G MUR190A A0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
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MUR190A R0G MUR190A R0G Taiwan Semiconductor Corporation MUR160%20SERIES_L2107.pdf Description: DIODE GEN PURP 900V 1A DO204AL
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MUR190AH MUR190AH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1A 900V DO-15
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MUR190A MUR190A Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1A 900V DO-15
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SMAJ33CAH SMAJ33CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PGSMAJ28CAHR2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CAHR2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
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PGSMAJ28CA M2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ28CA F2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CA F2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ28CA R2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CA R2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ28CA F3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CA F3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: Automotive
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PGSMAJ28CA F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CA F4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
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PGSMAJ28CA E2G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ28CA E2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ28CAHF2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CAHF2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
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RS3K
RS3K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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UF1JLW UF1DLW SERIES_C2103.pdf
UF1JLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UF1JLW UF1DLW SERIES_C2103.pdf
UF1JLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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SF35GH SF31G SERIES_H2105.pdf
SF35GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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SF35G SF31G SERIES_H2105.pdf
SF35G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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TSM2301ACX RFG TSM2301A_C15.pdf
TSM2301ACX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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TSM2301ACX RFG TSM2301A_C15.pdf
TSM2301ACX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
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BYG20D BYG20D SERIES_F2102.pdf
BYG20D
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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HER606G HER601G SERIES_H2104.pdf
HER606G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 6A R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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HS1MLW HS1DLW SERIES_C2103.pdf
HS1MLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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HS1MLW HS1DLW SERIES_C2103.pdf
HS1MLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 23746 Stücke:
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US1KH US1AH SERIES_A2102.pdf
US1KH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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7500+0.1 EUR
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TSM025NB04CR RLG TSMxxxNB0x_Newsletter.pdf
TSM025NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
Produkt ist nicht verfügbar
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TSM025NB04CR RLG TSMxxxNB0x_Newsletter.pdf
TSM025NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
auf Bestellung 696 Stücke:
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
TSM025NB04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 20 V
Produkt ist nicht verfügbar
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
TSM025NB04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 20 V
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1N5404GH 1N5400G SERIES_K2105.pdf
1N5404GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBU605 GBU601 SERIES_N2103.pdf
GBU605
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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GBU605H GBU601 SERIES_N2103.pdf
GBU605H
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A GBU
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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SMCJ28CA M6G SMCJ%20SERIES_S2104.pdf
SMCJ28CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Produkt ist nicht verfügbar
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SMCJ28CA R6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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SMCJ28CA M6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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SMCJ28CA R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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BZD27C160P BZD27C SERIES_AB2103.pdf
BZD27C160P
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 162V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Not For New Designs
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 162 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5.55%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1GFSH RS1DFSH SERIES_B2304.pdf
RS1GFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD128
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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RS1GFS RS1DFS SERIES_D2304.pdf
RS1GFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD128
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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RS1GH RS1AH SERIES_B2304.pdf
RS1GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
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P4KE170AH P4KE%20SERIES_N2104.pdf
P4KE170AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 145VWM 234VC DO204AL
Produkt ist nicht verfügbar
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1.5KE170CAH
1.5KE170CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 145VWM 234VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TQL820CA14V33 RLG TQL820CA14V33_A2111.pdf
TQL820CA14V33 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 14-TSSOP-EP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 77 µA
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 14-TSSOP-EP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.34V @ 200mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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AnzahlPrivatkunde
7+3.06 EUR
10+2.24 EUR
25+2.03 EUR
100+1.81 EUR
250+1.7 EUR
500+1.63 EUR
1000+1.58 EUR
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TQL820CA14V33 RLG TQL820CA14V33_A2111.pdf
TQL820CA14V33 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 14-TSSOP-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 77 µA
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 14-TSSOP-EP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.34V @ 200mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
2500+1.63 EUR
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P4SMA82CAH P4SMAH SERIES_A2102.pdf
P4SMA82CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMF12AH SMF5.0AH SERIES_A2103.pdf
SMF12AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE20CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1VWM 27.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6KE12CAH P6KE SERIES_P2203.pdf
P6KE12CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 37A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MUR190 MUR160 SERIES_L2107.pdf
MUR190
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
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3500+0.2 EUR
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MUR190H
MUR190H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
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AnzahlPrivatkunde
3500+0.2 EUR
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MUR190 B0G MUR160%20SERIES_L2107.pdf
MUR190 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AC
Produkt ist nicht verfügbar
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MUR190A R1G MUR160%20SERIES_L2107.pdf
MUR190A R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AL
Produkt ist nicht verfügbar
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MUR190 A0G MUR160%20SERIES_L2107.pdf
MUR190 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AC
Produkt ist nicht verfügbar
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MUR190A B0G MUR160%20SERIES_L2107.pdf
MUR190A B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AL
Produkt ist nicht verfügbar
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MUR190AHR1G MUR160%20SERIES_L2107.pdf
MUR190AHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AL
Produkt ist nicht verfügbar
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MUR190AHR0G MUR160%20SERIES_L2107.pdf
MUR190AHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AL
Produkt ist nicht verfügbar
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MUR190HB0G MUR160%20SERIES_L2107.pdf
MUR190HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AC
Produkt ist nicht verfügbar
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MUR190HA0G MUR160%20SERIES_L2107.pdf
MUR190HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AC
Produkt ist nicht verfügbar
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MUR190AHB0G MUR160%20SERIES_L2107.pdf
MUR190AHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AL
Produkt ist nicht verfügbar
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MUR190AHA0G MUR160%20SERIES_L2107.pdf
MUR190AHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AL
Produkt ist nicht verfügbar
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MUR190A A0G MUR160%20SERIES_L2107.pdf
MUR190A A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
Produkt ist nicht verfügbar
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MUR190A R0G MUR160%20SERIES_L2107.pdf
MUR190A R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 900V 1A DO204AL
Produkt ist nicht verfügbar
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MUR190AH
MUR190AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A 900V DO-15
Produkt ist nicht verfügbar
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MUR190A
MUR190A
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A 900V DO-15
Produkt ist nicht verfügbar
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SMAJ33CAH SMAJH SERIES_A2102.pdf
SMAJ33CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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