Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25590) > Seite 219 nach 427
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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PGSMAJ20A E2G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 20VWM 32.4VC DO214ACQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 32.4V Voltage - Breakdown (Min): 22.2V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 12.3A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PGSMAJ20A R2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PGSMAJ20A F4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PGSMAJ20A E3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 32.4V Voltage - Breakdown (Min): 22.2V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 12.3A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PGSMAJ20AHF2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PGSMAJ20AHE2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 32.4V Voltage - Breakdown (Min): 22.2V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 12.3A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PGSMAJ20AHE3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PGSMAJ20AHR2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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GBU15L05H | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 15A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 992 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU15L06H | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 15A GBU Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 600 V Part Status: Discontinued at Digi-Key Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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GBU15L05 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 15A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU15L06 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 15A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR750 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 7.5A TO220AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MBR750HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 7.5A TO220AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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1N4763AH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 91V 1W DO204AL Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V Power - Max: 1 W Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 250 Ohms Voltage - Zener (Nom) (Vz): 91 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6KE400AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 342VWM 548VC DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 1.1A Voltage - Reverse Standoff (Typ): 342V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 380V Voltage - Clamping (Max) @ Ipp: 548V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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1SMA5933 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1.5W DO214AC Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V Power - Max: 1.5 W Supplier Device Package: DO-214AC (SMA) Impedance (Max) (Zzt): 17.5 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMA5933H | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1.5W DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TSM056NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM056NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM032NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 81A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM032NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 81A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V |
auf Bestellung 4220 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM070NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 46.8W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TSM070NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 46.8W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4345 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM019NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TSM019NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V |
auf Bestellung 4965 Stücke: Lieferzeit 10-14 Tag (e) |
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SRT19 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SRT19 R0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SRT19 A1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SRT19HA1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SRT19HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SRT19 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 1A 90V TS-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SRT19HR0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SRT19H | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 1A 90V TS-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BYG23M | Taiwan Semiconductor Corporation |
Description: DIODE STD 1000V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX55B62 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 62V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B39 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 39V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B3V0 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B33 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B8V2 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B18 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B22 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B13 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B20 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 20V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B2V4 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 2.4V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B3V9 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.9V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B4V3 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B56 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 56V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SMDJ70A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214AB Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 113V Voltage - Breakdown (Min): 77.8V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 70V Current - Peak Pulse (10/1000µs): 26.5A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SMDJ70AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214AB Part Status: Active Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 113V Voltage - Breakdown (Min): 77.8V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 70V Current - Peak Pulse (10/1000µs): 26.5A Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SMDJ70A | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 26.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SMDJ70AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 26.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX55B30 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 500MW DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SMBJ33CAHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SS24M | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A MICRO SMA Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS24M | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A MICRO SMA Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
auf Bestellung 67605 Stücke: Lieferzeit 10-14 Tag (e) |
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SS24LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SS24LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
auf Bestellung 1418 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1.5KE82AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70.1VWM 113VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 13.9A Voltage - Reverse Standoff (Typ): 70.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.9V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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GBU2504 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 25A GBU Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
auf Bestellung 986 Stücke: Lieferzeit 10-14 Tag (e) |
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| PGSMAJ20A E2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 32.4VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ20A R2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ20A F4G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ20A E3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 32.4VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ20AHF2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ20AHE2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 32.4VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ20AHE3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PGSMAJ20AHR2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU15L05H |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.25 EUR |
| 10+ | 6.81 EUR |
| 100+ | 4.87 EUR |
| 500+ | 4.03 EUR |
| GBU15L06H |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU15L05 |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.89 EUR |
| 10+ | 6.56 EUR |
| GBU15L06 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.89 EUR |
| 10+ | 6.56 EUR |
| 100+ | 4.68 EUR |
| 500+ | 3.87 EUR |
| MBR750 C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR750HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4763AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 91V 1W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 91V 1W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6KE400AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1SMA5933 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Power - Max: 1.5 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 17.5 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 22V 1.5W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Power - Max: 1.5 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 17.5 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.15 EUR |
| 1SMA5933H |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSM056NH04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.04 EUR |
| 5000+ | 0.96 EUR |
| TSM056NH04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.58 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.15 EUR |
| 2000+ | 1.08 EUR |
| TSM032NH04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.38 EUR |
| TSM032NH04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 4220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.71 EUR |
| 10+ | 3.02 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.52 EUR |
| TSM070NH04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSM070NH04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4345 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.2 EUR |
| 11+ | 2.02 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.96 EUR |
| TSM019NH04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSM019NH04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.38 EUR |
| 10+ | 4.82 EUR |
| 50+ | 3.72 EUR |
| 100+ | 3.38 EUR |
| 500+ | 2.8 EUR |
| SRT19 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRT19 R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRT19 A1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRT19HA1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRT19HA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRT19 |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRT19HR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRT19H |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYG23M |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.15 EUR |
| 15000+ | 0.14 EUR |
| BZX55B62 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 500MW DO35
Description: DIODE ZENER 62V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B39 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW DO35
Description: DIODE ZENER 39V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B3V0 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW DO35
Description: DIODE ZENER 3V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B33 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW DO35
Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B8V2 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW DO35
Description: DIODE ZENER 8.2V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B18 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW DO35
Description: DIODE ZENER 18V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B22 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B13 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW DO35
Description: DIODE ZENER 13V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B20 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW DO35
Description: DIODE ZENER 20V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B2V4 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW DO35
Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B3V9 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Description: DIODE ZENER 3.9V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B4V3 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Description: DIODE ZENER 4.3V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B56 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Description: DIODE ZENER 56V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ70A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ70AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ70A |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ70AHM6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55B30 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW DO35
Description: DIODE ZENER 30V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ33CAHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Description: TVS DIODE 33VWM 53.3VC DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS24M |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12000+ | 0.14 EUR |
| 36000+ | 0.12 EUR |
| SS24M |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 67605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 43+ | 0.5 EUR |
| 59+ | 0.36 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| SS24LWH |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS24LWH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 1418 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 47+ | 0.45 EUR |
| 64+ | 0.33 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1.5KE82AH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GBU2504 |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 25A GBU
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 400V 25A GBU
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.68 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.44 EUR |