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PGSMAJ20A R2G PGSMAJ20A R2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
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PGSMAJ20A F4G PGSMAJ20A F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
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PGSMAJ20A E3G PGSMAJ20A E3G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PGSMAJ20AHF2G PGSMAJ20AHF2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
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PGSMAJ20AHE2G PGSMAJ20AHE2G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PGSMAJ20AHE3G PGSMAJ20AHE3G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
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PGSMAJ20AHR2G PGSMAJ20AHR2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
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GBU15L05H GBU15L05H Taiwan Semiconductor Corporation GBU15L05 SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 998 Stücke:
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3+8.54 EUR
20+5.09 EUR
100+4.06 EUR
500+3.37 EUR
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GBU15L06H GBU15L06H Taiwan Semiconductor Corporation GBU15L05 SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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GBU15L05 GBU15L05 Taiwan Semiconductor Corporation GBU15L05 SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1352 Stücke:
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100+3.9 EUR
500+3.23 EUR
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GBU15L06 GBU15L06 Taiwan Semiconductor Corporation GBU15L05 SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MBR750 C0G MBR750 C0G Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 50V 7.5A TO220AC
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MBR750HC0G MBR750HC0G Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 60V 7.5A TO220AC
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1N4763AH 1N4763AH Taiwan Semiconductor Corporation Description: DIODE ZENER 91V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Grade: Automotive
Qualification: AEC-Q101
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P6KE400AH P6KE400AH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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1SMA5933 1SMA5933 Taiwan Semiconductor Corporation 1SMA5926 SERIES_L2102.pdf Description: DIODE ZENER 22V 1.5W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
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1SMA5933H 1SMA5933H Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 22V 1.5W DO214AC
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TSM056NH04LCR RLG TSM056NH04LCR RLG Taiwan Semiconductor Corporation TSM056NH04LCR_E2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
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5000+0.73 EUR
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TSM056NH04LCR RLG TSM056NH04LCR RLG Taiwan Semiconductor Corporation TSM056NH04LCR_E2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
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7+2.83 EUR
10+1.81 EUR
100+1.22 EUR
500+0.97 EUR
1000+0.89 EUR
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TSM032NH04LCR RLG TSM032NH04LCR RLG Taiwan Semiconductor Corporation TSM032NH04LCR_D2207.pdf Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 2500 Stücke:
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2500+1.02 EUR
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TSM032NH04LCR RLG TSM032NH04LCR RLG Taiwan Semiconductor Corporation TSM032NH04LCR_D2207.pdf Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 4220 Stücke:
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5+3.63 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.25 EUR
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TSM070NH04LCR RLG TSM070NH04LCR RLG Taiwan Semiconductor Corporation TSM070NH04LCR_E2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
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TSM070NH04LCR RLG TSM070NH04LCR RLG Taiwan Semiconductor Corporation TSM070NH04LCR_E2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
auf Bestellung 4361 Stücke:
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8+2.45 EUR
12+1.55 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.74 EUR
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TSM019NH04LCR RLG TSM019NH04LCR RLG Taiwan Semiconductor Corporation TSM019NH04LCR_E2207.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
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TSM019NH04LCR RLG TSM019NH04LCR RLG Taiwan Semiconductor Corporation TSM019NH04LCR_E2207.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
auf Bestellung 4965 Stücke:
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4+5.23 EUR
10+3.72 EUR
100+2.6 EUR
500+2.3 EUR
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SRT19 A0G SRT19 A0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
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SRT19 R0G SRT19 R0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
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SRT19 A1G SRT19 A1G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
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SRT19HA1G SRT19HA1G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
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SRT19HA0G SRT19HA0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
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SRT19 SRT19 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 1A 90V TS-1
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SRT19HR0G SRT19HR0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 90V 1A TS-1
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SRT19H SRT19H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 1A 90V TS-1
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BYG23M BYG23M Taiwan Semiconductor Corporation BYG23M_C2102.pdf Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 7500 Stücke:
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7500+0.097 EUR
Mindestbestellmenge: 7500
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BZX55B62 A0G BZX55B62 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 62V 500MW DO35
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BZX55B39 A0G BZX55B39 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 39V 500MW DO35
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BZX55B3V0 A0G BZX55B3V0 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 3V 500MW DO35
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BZX55B33 A0G BZX55B33 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 33V 500MW DO35
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BZX55B8V2 A0G BZX55B8V2 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 8.2V 500MW DO35
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BZX55B18 A0G BZX55B18 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 18V 500MW DO35
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BZX55B22 A0G BZX55B22 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 22V 500MW DO35
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BZX55B13 A0G BZX55B13 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 13V 500MW DO35
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BZX55B20 A0G BZX55B20 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 20V 500MW DO35
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BZX55B2V4 A0G BZX55B2V4 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 2.4V 500MW DO35
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BZX55B3V9 A0G BZX55B3V9 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 3.9V 500MW DO35
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BZX55B4V3 A0G BZX55B4V3 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 4.3V 500MW DO35
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BZX55B56 A0G BZX55B56 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 56V 500MW DO35
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SMDJ70A M6G SMDJ70A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMDJ70AH SMDJ70AH Taiwan Semiconductor Corporation pdf.php?pn=SMDJ70AH Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ70A SMDJ70A Taiwan Semiconductor Corporation pdf.php?pn=SMDJ70A Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMDJ70AHM6G SMDJ70AHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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BZX55B30 A0G BZX55B30 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 30V 500MW DO35
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SMBJ33CAHR5G SMBJ33CAHR5G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
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SS24M SS24M Taiwan Semiconductor Corporation SS22M SERIES_M2103.pdf Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.11 EUR
15000+0.099 EUR
21000+0.095 EUR
30000+0.091 EUR
Mindestbestellmenge: 3000
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SS24M SS24M Taiwan Semiconductor Corporation SS22M SERIES_M2103.pdf Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 69953 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
53+0.34 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
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SS24LWH SS24LWH Taiwan Semiconductor Corporation SS24LWH SERIES_B2301.pdf Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
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SS24LWH SS24LWH Taiwan Semiconductor Corporation SS24LWH SERIES_B2301.pdf Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 8191 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
49+0.36 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
5000+0.11 EUR
Mindestbestellmenge: 27
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1.5KE82AH 1.5KE82AH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBU2504 GBU2504 Taiwan Semiconductor Corporation GBU2504 SERIES_E2205.pdf Description: BRIDGE RECT 1PHASE 400V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.25 EUR
10+1.83 EUR
100+1.43 EUR
500+1.21 EUR
Mindestbestellmenge: 8
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RS1KLS RS1KLS Taiwan Semiconductor Corporation RS1JLS SERIES_E2304.pdf Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.079 EUR
Mindestbestellmenge: 10000
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PGSMAJ20A R2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20A R2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
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PGSMAJ20A F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20A F4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
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PGSMAJ20A E3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ20A E3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PGSMAJ20AHF2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20AHF2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
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PGSMAJ20AHE2G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ20AHE2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PGSMAJ20AHE3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ20AHE3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
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PGSMAJ20AHR2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20AHR2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
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GBU15L05H GBU15L05 SERIES_C2103.pdf
GBU15L05H
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.54 EUR
20+5.09 EUR
100+4.06 EUR
500+3.37 EUR
Mindestbestellmenge: 3
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GBU15L06H GBU15L05 SERIES_C2103.pdf
GBU15L06H
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBU15L05 GBU15L05 SERIES_C2103.pdf
GBU15L05
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.24 EUR
20+4.9 EUR
100+3.9 EUR
500+3.23 EUR
1000+3.03 EUR
Mindestbestellmenge: 3
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GBU15L06 GBU15L05 SERIES_C2103.pdf
GBU15L06
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.24 EUR
20+4.9 EUR
100+3.9 EUR
500+3.23 EUR
Mindestbestellmenge: 3
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MBR750 C0G MBR735%20SERIES_K2103.pdf
MBR750 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Produkt ist nicht verfügbar
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MBR750HC0G MBR735%20SERIES_K2103.pdf
MBR750HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
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1N4763AH
1N4763AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 91V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6KE400AH P6KE SERIES_P2203.pdf
P6KE400AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1SMA5933 1SMA5926 SERIES_L2102.pdf
1SMA5933
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.13 EUR
Mindestbestellmenge: 7500
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1SMA5933H 1SMA5926%20SERIES_L2102.pdf
1SMA5933H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Produkt ist nicht verfügbar
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TSM056NH04LCR RLG TSM056NH04LCR_E2207.pdf
TSM056NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.73 EUR
Mindestbestellmenge: 5000
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TSM056NH04LCR RLG TSM056NH04LCR_E2207.pdf
TSM056NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.81 EUR
100+1.22 EUR
500+0.97 EUR
1000+0.89 EUR
Mindestbestellmenge: 7
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TSM032NH04LCR RLG TSM032NH04LCR_D2207.pdf
TSM032NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.02 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TSM032NH04LCR RLG TSM032NH04LCR_D2207.pdf
TSM032NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 4220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.25 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TSM070NH04LCR RLG TSM070NH04LCR_E2207.pdf
TSM070NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM070NH04LCR RLG TSM070NH04LCR_E2207.pdf
TSM070NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
auf Bestellung 4361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.55 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.74 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TSM019NH04LCR RLG TSM019NH04LCR_E2207.pdf
TSM019NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM019NH04LCR RLG TSM019NH04LCR_E2207.pdf
TSM019NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.23 EUR
10+3.72 EUR
100+2.6 EUR
500+2.3 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SRT19 A0G SRT12%20SERIES_I2104.pdf
SRT19 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SRT19 R0G SRT12%20SERIES_I2104.pdf
SRT19 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SRT19 A1G SRT12%20SERIES_I2104.pdf
SRT19 A1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SRT19HA1G SRT12%20SERIES_I2104.pdf
SRT19HA1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SRT19HA0G SRT12%20SERIES_I2104.pdf
SRT19HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SRT19
SRT19
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SRT19HR0G SRT12%20SERIES_I2104.pdf
SRT19HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SRT19H
SRT19H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYG23M BYG23M_C2102.pdf
BYG23M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.097 EUR
Mindestbestellmenge: 7500
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B62 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B62 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B39 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B39 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B3V0 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B3V0 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B33 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B33 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B8V2 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B8V2 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B18 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B18 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B22 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B22 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B13 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B13 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B20 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B20 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B2V4 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B2V4 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B3V9 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B3V9 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B4V3 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B4V3 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B56 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B56 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ70A M6G SMDJ%20SERIES_I2104.pdf
SMDJ70A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ70AH pdf.php?pn=SMDJ70AH
SMDJ70AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ70A pdf.php?pn=SMDJ70A
SMDJ70A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ70AHM6G SMDJH%20SERIES_B2104.pdf
SMDJ70AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B30 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B30 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ33CAHR5G SMBJ%20SERIES_R2104.pdf
SMBJ33CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS24M SS22M SERIES_M2103.pdf
SS24M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
15000+0.099 EUR
21000+0.095 EUR
30000+0.091 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SS24M SS22M SERIES_M2103.pdf
SS24M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 69953 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
53+0.34 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
SS24LWH SS24LWH SERIES_B2301.pdf
SS24LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS24LWH SS24LWH SERIES_B2301.pdf
SS24LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 8191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
49+0.36 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
5000+0.11 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE82AH
1.5KE82AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU2504 GBU2504 SERIES_E2205.pdf
GBU2504
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
10+1.83 EUR
100+1.43 EUR
500+1.21 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
RS1KLS RS1JLS SERIES_E2304.pdf
RS1KLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.079 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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