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P6SMB200CAH P6SMB200CAH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 171VWM 274VC DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
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SMBJ12CAH SMBJ12CAH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 12VWM 19.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ABS2 RGG ABS2 RGG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ABS2 REG ABS2 REG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 800MA ABS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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ABS2HRGG ABS2HRGG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 800MA ABS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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ABS2HREG ABS2HREG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 800MA ABS
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
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P6SMB82CAH P6SMB82CAH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 70.1VWM 113VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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1KSMB82A 1KSMB82A Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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1KSMB82CA R5G 1KSMB82CA R5G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 70.1VWM 113VC DO214AA
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1KSMB82CAH 1KSMB82CAH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 8.8A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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1KSMB82AH 1KSMB82AH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 8.8A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
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P6SMB82AH P6SMB82AH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
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1KSMB82A R5G 1KSMB82A R5G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 70.1VWM 113VC DO214AA
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TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0 M7G Taiwan Semiconductor Corporation TESDL5V0B12P1Q0_A2203.pdf Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
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TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0 M7G Taiwan Semiconductor Corporation TESDL5V0B12P1Q0_A2203.pdf Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
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PU2BLSH PU2BLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE STANDARD 100V 2A SOD123HE
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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PU2BLSH PU2BLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE STANDARD 100V 2A SOD123HE
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Qualification: AEC-Q101
Grade: Automotive
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P6KE11AH P6KE11AH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 9.4VWM 15.6V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SS14LS SS14LS Taiwan Semiconductor Corporation SS12LS SERIES_D2212.pdf Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14LS SS14LS Taiwan Semiconductor Corporation SS12LS SERIES_D2212.pdf Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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HER1607G HER1607G Taiwan Semiconductor Corporation pdf.php?pn=HER1607G Description: DIODE ARRAY GP 800V 16A TO220AB
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
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HER1608G HER1608G Taiwan Semiconductor Corporation HER1601G SERIES_J2104.pdf Description: DIODE ARRAY GP 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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HER1608PT HER1608PT Taiwan Semiconductor Corporation HER1601PT SERIES_H2103.pdf Description: DIODE ARRAY GEN PURP 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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TSM10N06CP ROG TSM10N06CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 10A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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1.5SMC82CA M6 1.5SMC82CA M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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HER105G HER105G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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HER155G HER155G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE STANDARD 400V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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HER154G HER154G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE STANDARD 300V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HER156G HER156G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE STANDARD 600V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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ESH3C ESH3C Taiwan Semiconductor Corporation ESH3B%20SERIES_I2102.pdf Description: DIODE GEN PURP 150V 3A DO214AB
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ESH3C R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
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ESH3C R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
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ESH3C M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
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ESH3C R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
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SR1660 SR1660 Taiwan Semiconductor Corporation SR1620 SERIES_J2104.pdf Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SR1660PT C0G SR1660PT C0G Taiwan Semiconductor Corporation SR1620PT%20SERIES_J2103.pdf Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SR1660PTH SR1660PTH Taiwan Semiconductor Corporation SR1620PT SERIES_J2103.pdf Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SR1660HC0G SR1660HC0G Taiwan Semiconductor Corporation SR1620%20SERIES_J2104.pdf Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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UF1DLW RVG UF1DLW RVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 20 ns
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UF1DLW RVG UF1DLW RVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
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UF1DLWHRVG UF1DLWHRVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
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UF1DLWHRVG UF1DLWHRVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
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SFT14G SFT14G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1A 200V TS-1
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SFT14G SFT14G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1A 200V TS-1
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SFT14G A0G SFT14G A0G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
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SFT14GHA0G SFT14GHA0G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
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SFT14GHA1G SFT14GHA1G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
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SFT14GH SFT14GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE STANDARD 200V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SFT14G A1G SFT14G A1G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
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SF14GH SF14GH Taiwan Semiconductor Corporation SF11G SERIES_H2104.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Grade: Automotive
Qualification: AEC-Q101
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ES1LDHR3G ES1LDHR3G Taiwan Semiconductor Corporation ES1LD%20SERIES_B2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
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1SMB5940 1SMB5940 Taiwan Semiconductor Corporation 1SMB5926 SERIES_M2102.pdf Description: DIODE ZENER 43V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Power - Max: 3 W
Part Status: Active
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 53 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1SMB5940H 1SMB5940H Taiwan Semiconductor Corporation 1SMB5926H SERIES_A2102.pdf Description: DIODE ZENER 43V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Grade: Automotive
Qualification: AEC-Q101
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SMF9.0AH SMF9.0AH Taiwan Semiconductor Corporation SMF5.0AH SERIES_A2103.pdf Description: TVS DIODE 9VWM 15.4VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 15.4V
Voltage - Breakdown (Min): 10V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 13A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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TS2937CW50 RPG TS2937CW50 RPG Taiwan Semiconductor Corporation TS2937_E15.pdf Description: IC REG LINEAR 5V 500MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
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TS2937CW50 RPG TS2937CW50 RPG Taiwan Semiconductor Corporation TS2937_E15.pdf Description: IC REG LINEAR 5V 500MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
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SF22GH SF22GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 2A DO204AC
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SF22G SF22G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 2A DO204AC
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SS36LHRUG SS36LHRUG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SS36LHRVG SS36LHRVG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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P6SMB200CAH P6SMBH SERIES_A2102.pdf
P6SMB200CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 274VC DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SMBJ12CAH SMBJH SERIES_A2102.pdf
SMBJ12CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ABS2 RGG ABS2%20SERIES_M2103.pdf
ABS2 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ABS2 REG ABS2%20SERIES_M2103.pdf
ABS2 REG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 800MA ABS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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ABS2HRGG ABS2%20SERIES_M2103.pdf
ABS2HRGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 800MA ABS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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ABS2HREG ABS2%20SERIES_M2103.pdf
ABS2HREG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 800MA ABS
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
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P6SMB82CAH P6SMBH SERIES_A2102.pdf
P6SMB82CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1KSMB82A
1KSMB82A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1KSMB82CA R5G 1KSMB SERIES_A2102.pdf
1KSMB82CA R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
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1KSMB82CAH
1KSMB82CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 8.8A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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1KSMB82AH
1KSMB82AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 8.8A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
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P6SMB82AH
P6SMB82AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 70.1V
Current - Peak Pulse (10/1000µs): 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Produkt ist nicht verfügbar
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1KSMB82A R5G 1KSMB SERIES_A2102.pdf
1KSMB82A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Produkt ist nicht verfügbar
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TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0_A2203.pdf
TESDL5V0B12P1Q0 M7G
Hersteller: Taiwan Semiconductor Corporation
Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0_A2203.pdf
TESDL5V0B12P1Q0 M7G
Hersteller: Taiwan Semiconductor Corporation
Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
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42+0.5 EUR
69+0.31 EUR
110+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.095 EUR
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PU2BLSH PU2BLSH SERIES_B2109.pdf
PU2BLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A SOD123HE
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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PU2BLSH PU2BLSH SERIES_B2109.pdf
PU2BLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A SOD123HE
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Qualification: AEC-Q101
Grade: Automotive
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33+0.65 EUR
42+0.5 EUR
100+0.36 EUR
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P6KE11AH P6KE SERIES_P2203.pdf
P6KE11AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4VWM 15.6V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS14LS SS12LS SERIES_D2212.pdf
SS14LS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
auf Bestellung 30000 Stücke:
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10000+0.11 EUR
30000+0.092 EUR
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SS14LS SS12LS SERIES_D2212.pdf
SS14LS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
auf Bestellung 49459 Stücke:
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35+0.61 EUR
57+0.37 EUR
79+0.26 EUR
100+0.23 EUR
500+0.17 EUR
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HER1607G pdf.php?pn=HER1607G
HER1607G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 16A TO220AB
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Produkt ist nicht verfügbar
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HER1608G HER1601G SERIES_J2104.pdf
HER1608G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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7+3.44 EUR
10+2.18 EUR
50+1.63 EUR
100+1.46 EUR
500+1.14 EUR
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HER1608PT HER1601PT SERIES_H2103.pdf
HER1608PT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GEN PURP 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 890 Stücke:
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4+5.45 EUR
10+3.5 EUR
50+2.67 EUR
100+2.4 EUR
500+1.93 EUR
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TSM10N06CP ROG
TSM10N06CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 10A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC82CA M6
1.5SMC82CA M6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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HER105G HER101G SERIES_L2104.pdf
HER105G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.17 EUR
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HER155G HER151G SERIES_I2105.pdf
HER155G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke:
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AnzahlPrivatkunde
3500+0.18 EUR
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HER154G HER151G SERIES_I2105.pdf
HER154G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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HER156G HER151G SERIES_I2105.pdf
HER156G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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3500+0.18 EUR
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ESH3C ESH3B%20SERIES_I2102.pdf
ESH3C
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 3A DO214AB
Produkt ist nicht verfügbar
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ESH3C R6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Produkt ist nicht verfügbar
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ESH3C R6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Produkt ist nicht verfügbar
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ESH3C M6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Produkt ist nicht verfügbar
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ESH3C R7
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Produkt ist nicht verfügbar
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SR1660 SR1620 SERIES_J2104.pdf
SR1660
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SR1660PT C0G SR1620PT%20SERIES_J2103.pdf
SR1660PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SR1660PTH SR1620PT SERIES_J2103.pdf
SR1660PTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SR1660HC0G SR1620%20SERIES_J2104.pdf
SR1660HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UF1DLW RVG UF1DLW%20SERIES_C2103.pdf
UF1DLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 20 ns
auf Bestellung 6000 Stücke:
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3000+0.32 EUR
6000+0.3 EUR
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UF1DLW RVG UF1DLW%20SERIES_C2103.pdf
UF1DLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 11518 Stücke:
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AnzahlPrivatkunde
19+1.13 EUR
23+0.92 EUR
100+0.63 EUR
500+0.46 EUR
1000+0.36 EUR
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UF1DLWHRVG UF1DLW%20SERIES_C2103.pdf
UF1DLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Produkt ist nicht verfügbar
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UF1DLWHRVG UF1DLW%20SERIES_C2103.pdf
UF1DLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Produkt ist nicht verfügbar
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SFT14G
SFT14G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A 200V TS-1
Produkt ist nicht verfügbar
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SFT14G
SFT14G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A 200V TS-1
Produkt ist nicht verfügbar
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SFT14G A0G SFT11G%20SERIES_J2104.pdf
SFT14G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Produkt ist nicht verfügbar
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SFT14GHA0G SFT11G%20SERIES_J2104.pdf
SFT14GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Produkt ist nicht verfügbar
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SFT14GHA1G SFT11G%20SERIES_J2104.pdf
SFT14GHA1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Produkt ist nicht verfügbar
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SFT14GH SFT11G SERIES_J2104.pdf
SFT14GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SFT14G A1G SFT11G%20SERIES_J2104.pdf
SFT14G A1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Produkt ist nicht verfügbar
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SF14GH SF11G SERIES_H2104.pdf
SF14GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Grade: Automotive
Qualification: AEC-Q101
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ES1LDHR3G ES1LD%20SERIES_B2102.pdf
ES1LDHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
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1SMB5940 1SMB5926 SERIES_M2102.pdf
1SMB5940
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Power - Max: 3 W
Part Status: Active
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 53 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SMB5940H 1SMB5926H SERIES_A2102.pdf
1SMB5940H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMF9.0AH SMF5.0AH SERIES_A2103.pdf
SMF9.0AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 15.4V
Voltage - Breakdown (Min): 10V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 13A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TS2937CW50 RPG TS2937_E15.pdf
TS2937CW50 RPG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.87 EUR
5000+0.84 EUR
7500+0.83 EUR
12500+0.82 EUR
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TS2937CW50 RPG TS2937_E15.pdf
TS2937CW50 RPG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
auf Bestellung 13534 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.82 EUR
16+1.32 EUR
25+1.19 EUR
100+1.05 EUR
250+0.98 EUR
500+0.94 EUR
1000+0.9 EUR
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SF22GH
SF22GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Produkt ist nicht verfügbar
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SF22G
SF22G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Produkt ist nicht verfügbar
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SS36LHRUG SS34L-SS310L_C2103.pdf
SS36LHRUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SS36LHRVG SS34L-SS310L_C2103.pdf
SS36LHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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