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1.5KE36CAH 1.5KE36CAH Taiwan Semiconductor Corporation Description: TVS DIODE 30.8VWM 49.9VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TESDU5V0 RGG TESDU5V0 RGG Taiwan Semiconductor Corporation TESDU5V0 SERIES_H1601.pdf Description: TVS DIODE 5VWM 15VC 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 0603
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TESDU5V0 RGG TESDU5V0 RGG Taiwan Semiconductor Corporation TESDU5V0 SERIES_H1601.pdf Description: TVS DIODE 5VWM 15VC 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 0603
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
auf Bestellung 3678 Stücke:
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33+0.55 EUR
48+0.37 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 33
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S1JL S1JL Taiwan Semiconductor Corporation S1xL_Rev.O15.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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S1JL S1JL Taiwan Semiconductor Corporation S1xL_Rev.O15.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 18370 Stücke:
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40+0.45 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
2000+0.12 EUR
5000+0.11 EUR
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S1ML S1ML Taiwan Semiconductor Corporation S1AL SERIES_Q2108.pdf Description: DIODE STANDARD 1000V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 39280 Stücke:
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10000+0.11 EUR
20000+0.081 EUR
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S1ML S1ML Taiwan Semiconductor Corporation S1AL SERIES_Q2108.pdf Description: DIODE STANDARD 1000V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 39603 Stücke:
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30+0.6 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.12 EUR
Mindestbestellmenge: 30
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ES1GL ES1GL Taiwan Semiconductor Corporation ES1AL SERIES_L2103.pdf Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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ES1GL ES1GL Taiwan Semiconductor Corporation ES1AL SERIES_L2103.pdf Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 14413 Stücke:
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23+0.79 EUR
33+0.54 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.19 EUR
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BZD27C51P BZD27C51P Taiwan Semiconductor Corporation BZD27C SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
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BZD27C51P BZD27C51P Taiwan Semiconductor Corporation BZD27C SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
auf Bestellung 19150 Stücke:
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28+0.63 EUR
36+0.49 EUR
100+0.29 EUR
500+0.27 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 28
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KBL605G KBL605G Taiwan Semiconductor Corporation KBL601G SERIES_H2308.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 984 Stücke:
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7+2.8 EUR
10+1.89 EUR
25+1.63 EUR
80+1.38 EUR
230+1.19 EUR
440+1.1 EUR
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KBL604G KBL604G Taiwan Semiconductor Corporation KBL601G SERIES_H2308.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 818 Stücke:
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KBL607G KBL607G Taiwan Semiconductor Corporation KBL601G SERIES_H2308.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1000 Stücke:
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8+2.24 EUR
12+1.51 EUR
25+1.31 EUR
80+1.1 EUR
230+0.95 EUR
440+0.92 EUR
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SMCJ160CA V6G SMCJ160CA V6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 160VWM 259VC DO214AB
Produkt ist nicht verfügbar
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SMCJ160CA R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SMCJ160CA R7G SMCJ160CA R7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 160VWM 259VC DO214AB
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SMCJ160CAHR7G SMCJ160CAHR7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 160VWM 259VC DO214AB
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SMCJ160CA M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SMCJ160CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SMCJ160CA R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SMCJ160CAHM6G SMCJ160CAHM6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 160VWM 259VC DO214AB
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P4KE440CAH P4KE440CAH Taiwan Semiconductor Corporation Description: TVS DIODE 376VWM 600VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 690mA
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC62A V7G 1.5SMC62A V7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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1.5SMC62A M6G 1.5SMC62A M6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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1.5SMC62AHR7G 1.5SMC62AHR7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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1.5SMC62A R7G 1.5SMC62A R7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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1.5SMC62CA R7G 1.5SMC62CA R7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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1.5SMC62CAHR7G 1.5SMC62CAHR7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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1.5SMC62CAHM6G 1.5SMC62CAHM6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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1.5SMC62CA V7G 1.5SMC62CA V7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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1.5SMC62AHM6G 1.5SMC62AHM6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 53VWM 85VC DO214AB
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SMAJ13CAH SMAJ13CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 13VWM 21.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SA36AH SA36AH Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 36VWM 58.1VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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SA36CAH SA36CAH Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 36VWM 58.1VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 500W
Power Line Protection: No
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SA36CAHB0G SA36CAHB0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 36VWM 58.1VC DO204AC
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SA36CAHA0G SA36CAHA0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 36VWM 58.1VC DO204AC
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HER1606G HER1606G Taiwan Semiconductor Corporation HER1601G SERIES_J2104.pdf Description: DIODE ARRAY GP 600V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RS3KH RS3KH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.22 EUR
Mindestbestellmenge: 3000
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RS3K R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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RS3K M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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RS3K R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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RS3K R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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SR504 SR504 Taiwan Semiconductor Corporation SR502 SERIES_J2105.pdf description Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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SR504H SR504H Taiwan Semiconductor Corporation SR502 SERIES_J2105.pdf Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SFF1002GA C0G SFF1002GA C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE GEN PURP 100V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1007GA C0G SFF1007GA C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 500V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
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SFF1001GA C0G SFF1001GA C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE GEN PURP 50V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1001G C0G SFF1001G C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE GEN PURP 50V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1007G C0G SFF1007G C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 500V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
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SFF1002G C0G SFF1002G C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE GEN PURP 100V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1008GAHC0G SFF1008GAHC0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SFF1002GHC0G SFF1002GHC0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE GEN PURP 100V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1003GA C0G SFF1003GA C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE GEN PURP 150V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1002GAHC0G SFF1002GAHC0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE GEN PURP 100V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1008GHC0G SFF1008GHC0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24MH SS24MH Taiwan Semiconductor Corporation SS22MH SERIES_A2103.pdf Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
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SS24MH SS24MH Taiwan Semiconductor Corporation SS22MH SERIES_A2103.pdf Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
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MBRI30100CT MBRI30100CT Taiwan Semiconductor Corporation MBRI30100CT_F2104.pdf Description: DIODE ARRAY SCHOT 100V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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MBRF30100CTH MBRF30100CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE36CAH
1.5KE36CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TESDU5V0 RGG TESDU5V0 SERIES_H1601.pdf
TESDU5V0 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5VWM 15VC 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 0603
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TESDU5V0 RGG TESDU5V0 SERIES_H1601.pdf
TESDU5V0 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5VWM 15VC 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 0603
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
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33+0.55 EUR
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S1JL S1xL_Rev.O15.pdf
S1JL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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S1JL S1xL_Rev.O15.pdf
S1JL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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S1ML S1AL SERIES_Q2108.pdf
S1ML
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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S1ML S1AL SERIES_Q2108.pdf
S1ML
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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ES1GL ES1AL SERIES_L2103.pdf
ES1GL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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ES1GL ES1AL SERIES_L2103.pdf
ES1GL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BZD27C51P BZD27C SERIES_AB2103.pdf
BZD27C51P
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
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BZD27C51P BZD27C SERIES_AB2103.pdf
BZD27C51P
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
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KBL605G KBL601G SERIES_H2308.pdf
KBL605G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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KBL604G KBL601G SERIES_H2308.pdf
KBL604G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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KBL607G KBL601G SERIES_H2308.pdf
KBL607G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.51 EUR
25+1.31 EUR
80+1.1 EUR
230+0.95 EUR
440+0.92 EUR
Mindestbestellmenge: 8
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SMCJ160CA V6G SMCJ%20SERIES_S2104.pdf
SMCJ160CA V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AB
Produkt ist nicht verfügbar
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SMCJ160CA R6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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SMCJ160CA R7G SMCJ%20SERIES_S2104.pdf
SMCJ160CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AB
Produkt ist nicht verfügbar
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SMCJ160CAHR7G SMCJ%20SERIES_S2104.pdf
SMCJ160CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ160CA M6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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SMCJ160CA R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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SMCJ160CA R6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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SMCJ160CAHM6G SMCJ%20SERIES_S2104.pdf
SMCJ160CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4KE440CAH
P4KE440CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 376VWM 600VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 690mA
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC62A V7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC62A M6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC62AHR7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC62A R7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC62CA R7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC62CAHR7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC62CAHM6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC62CA V7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62CA V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC62AHM6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC62AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AB
Produkt ist nicht verfügbar
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SMAJ13CAH SMAJH SERIES_A2102.pdf
SMAJ13CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13VWM 21.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SA36AH SA%20SERIES_L2105.pdf
SA36AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SA36CAH SA%20SERIES_L2105.pdf
SA36CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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SA36CAHB0G SA%20SERIES_L2105.pdf
SA36CAHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO204AC
Produkt ist nicht verfügbar
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SA36CAHA0G SA%20SERIES_L2105.pdf
SA36CAHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO204AC
Produkt ist nicht verfügbar
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HER1606G HER1601G SERIES_J2104.pdf
HER1606G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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RS3KH
RS3KH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RS3K R6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS3K M6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS3K R6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS3K R7
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SR504 description SR502 SERIES_J2105.pdf
SR504
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SR504H SR502 SERIES_J2105.pdf
SR504H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFF1002GA C0G SFF1001G%20SERIES_M2105.pdf
SFF1002GA C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1007GA C0G SFF1001G%20SERIES_M2105.pdf
SFF1007GA C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 500V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFF1001GA C0G SFF1001G%20SERIES_M2105.pdf
SFF1001GA C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1001G C0G SFF1001G%20SERIES_M2105.pdf
SFF1001G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1007G C0G SFF1001G%20SERIES_M2105.pdf
SFF1007G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 500V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
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SFF1002G C0G SFF1001G%20SERIES_M2105.pdf
SFF1002G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1008GAHC0G SFF1001G%20SERIES_M2105.pdf
SFF1008GAHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFF1002GHC0G SFF1001G%20SERIES_M2105.pdf
SFF1002GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1003GA C0G SFF1001G%20SERIES_M2105.pdf
SFF1003GA C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1002GAHC0G SFF1001G%20SERIES_M2105.pdf
SFF1002GAHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 10A ITO220AB
Produkt ist nicht verfügbar
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SFF1008GHC0G SFF1001G%20SERIES_M2105.pdf
SFF1008GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS24MH SS22MH SERIES_A2103.pdf
SS24MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12000+0.1 EUR
Mindestbestellmenge: 12000
Im Einkaufswagen  Stück im Wert von  UAH
SS24MH SS22MH SERIES_A2103.pdf
SS24MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
auf Bestellung 22977 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
50+0.35 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.11 EUR
Mindestbestellmenge: 32
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MBRI30100CT MBRI30100CT_F2104.pdf
MBRI30100CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOT 100V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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MBRF30100CTH
MBRF30100CTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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