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ES3A M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
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ES3A R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
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ES3A R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
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ES3AH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
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ES3A R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
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S5G R7G S5G R7G Taiwan Semiconductor Corporation S5A%20SERIES_F2102.pdf Description: DIODE GEN PURP 400V 5A DO214AB
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S5G R7G S5G R7G Taiwan Semiconductor Corporation S5A%20SERIES_F2102.pdf Description: DIODE GEN PURP 400V 5A DO214AB
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S5G R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
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S5G R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
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S5G R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
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HS5G R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
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HS5G R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
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HS5G R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
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SK39A SK39A Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SK39AH Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 3A DO214AC
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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MMBT3906T RSG MMBT3906T RSG Taiwan Semiconductor Corporation MMBT3906T_A2209.pdf Description: TRANS PNP 40V 0.2A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
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MMBT3906T RSG MMBT3906T RSG Taiwan Semiconductor Corporation MMBT3906T_A2209.pdf Description: TRANS PNP 40V 0.2A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
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MBR40150PTH MBR40150PTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 40A TO247AD
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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BZX79C56 A0G BZX79C56 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_F1804.pdf Description: DIODE ZENER 56V 500MW DO35
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BZX55B27 A0G BZX55B27 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 27V 500MW DO35
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1PGSMB5942 R5G 1PGSMB5942 R5G Taiwan Semiconductor Corporation 1PGSMB5926%20-%201PGSMB5956.pdf Description: DIODE ZENER 51V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
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1PGSMB5942HR5G 1PGSMB5942HR5G Taiwan Semiconductor Corporation 1PGSMB5926%20-%201PGSMB5956.pdf Description: DIODE ZENER 51V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
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22+0.96 EUR
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1PGSMB5942 1PGSMB5942 Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 3W DO214AA
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1PGSMB5942H 1PGSMB5942H Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 3W DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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PGSMAJ58CAHF2G PGSMAJ58CAHF2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ58CA R3G PGSMAJ58CA R3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PGSMAJ58CAHF4G PGSMAJ58CAHF4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
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PGSMAJ58CAHF3G PGSMAJ58CAHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
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PGSMAJ58CAHR2G PGSMAJ58CAHR2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
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PGSMAJ58CA F4G PGSMAJ58CA F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
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1PGSMC5359 V7G 1PGSMC5359 V7G Taiwan Semiconductor Corporation Description: DIODE ZENER 5W DO214AB
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TLD6S24AH TLD6S24AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
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TLD6S24AH TLD6S24AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
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10+11.45 EUR
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RS1KFSH RS1KFSH Taiwan Semiconductor Corporation RS1DFSH SERIES_B2304.pdf Description: DIODE STANDARD 800V 1A SOD128
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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MURF8L60 MURF8L60 Taiwan Semiconductor Corporation MURF8L60_C2105.pdf Description: DIODE STANDARD 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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MURF8L60HC0G MURF8L60HC0G Taiwan Semiconductor Corporation MURF8L60_C2105.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
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SK515C M6 Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 150V 5A DO214AB
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SK515C R6G Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 150V 5A DO214AB
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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BZT55B3V3 L1G BZT55B3V3 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
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BZT55B3V3 L0G BZT55B3V3 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
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SF46G SF46G Taiwan Semiconductor Corporation SF41G SERIES_G2105.pdf Description: DIODE GEN PURP 400V 4A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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SF46GH SF46GH Taiwan Semiconductor Corporation SF41G SERIES_G2105.pdf Description: DIODE GEN PURP 400V 4A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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MBR25150CTHC0G MBR25150CTHC0G Taiwan Semiconductor Corporation MBR2535CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOT 150V 25A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MBRF15150CT MBRF15150CT Taiwan Semiconductor Corporation MBRF1535CT SERIES_J2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF15150CTHC0G MBRF15150CTHC0G Taiwan Semiconductor Corporation MBRF1535CT%20SERIES_J2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
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MBRF25150CT MBRF25150CT Taiwan Semiconductor Corporation MBRF2535CT SERIES_L2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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MBRF5150HC0G MBRF5150HC0G Taiwan Semiconductor Corporation MBRF5100%20SERIES_H2105.pdf Description: DIODE SCHOTTKY 150V 5A ITO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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MBRF5150H MBRF5150H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 5A ITO220AC
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MBRF25150CTHC0G MBRF25150CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRF5150 C0G MBRF5150 C0G Taiwan Semiconductor Corporation MBRF5100%20SERIES_H2105.pdf Description: DIODE SCHOTTKY 150V 5A ITO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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BZX585B3V3 RKG BZX585B3V3 RKG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 3.3V 200MW SOD523F
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SMCJ58CAHM6G SMCJ58CAHM6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
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SMCJ58CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SRF20150 SRF20150 Taiwan Semiconductor Corporation SRF2020%20SERIES_J2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
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TQM250NB06CR RLG TQM250NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 7A/32A 8PDFNU
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TQM250NB06CR RLG TQM250NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 7A/32A 8PDFNU
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TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation TSM250NB06CV_A2007.pdf Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation TSM250NB06CV_A2007.pdf Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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TSM250NB06LCV RGG TSM250NB06LCV RGG Taiwan Semiconductor Corporation TSM250NB06LCV_A2008.pdf Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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TSM250NB06LCV RGG TSM250NB06LCV RGG Taiwan Semiconductor Corporation TSM250NB06LCV_A2008.pdf Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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500+0.62 EUR
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ES3A M6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
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ES3A R6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
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ES3A R7
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
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ES3AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
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ES3A R6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
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S5G R7G S5A%20SERIES_F2102.pdf
S5G R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
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S5G R7G S5A%20SERIES_F2102.pdf
S5G R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
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S5G R6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
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S5G R6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
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S5G R7
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
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HS5G R7
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
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HS5G R6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
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HS5G R6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
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SK39A
SK39A
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SK39AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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MMBT3906T RSG MMBT3906T_A2209.pdf
MMBT3906T RSG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 40V 0.2A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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MMBT3906T RSG MMBT3906T_A2209.pdf
MMBT3906T RSG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 40V 0.2A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
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MBR40150PTH
MBR40150PTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 40A TO247AD
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZX79C56 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C56 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
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BZX55B27 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B27 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW DO35
Produkt ist nicht verfügbar
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1PGSMB5942 R5G 1PGSMB5926%20-%201PGSMB5956.pdf
1PGSMB5942 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
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12+1.8 EUR
19+1.12 EUR
100+0.73 EUR
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1PGSMB5942HR5G 1PGSMB5926%20-%201PGSMB5956.pdf
1PGSMB5942HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 452 Stücke:
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AnzahlPrivatkunde
15+1.44 EUR
22+0.96 EUR
100+0.67 EUR
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1PGSMB5942
1PGSMB5942
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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1PGSMB5942H
1PGSMB5942H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Power - Max: 3 W
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PGSMAJ58CAHF2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHF2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PGSMAJ58CA R3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PGSMAJ58CAHF4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHF4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Produkt ist nicht verfügbar
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PGSMAJ58CAHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHF3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Produkt ist nicht verfügbar
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PGSMAJ58CAHR2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHR2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Produkt ist nicht verfügbar
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PGSMAJ58CA F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CA F4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Part Status: Obsolete
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
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1PGSMC5359 V7G
1PGSMC5359 V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5W DO214AB
Produkt ist nicht verfügbar
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TLD6S24AH TLD6S10AH SERIES_D2103.pdf
TLD6S24AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Produkt ist nicht verfügbar
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TLD6S24AH TLD6S10AH SERIES_D2103.pdf
TLD6S24AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
auf Bestellung 1450 Stücke:
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2+12.76 EUR
10+11.45 EUR
100+9.38 EUR
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RS1KFSH RS1DFSH SERIES_B2304.pdf
RS1KFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SOD128
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 28000 Stücke:
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14000+0.099 EUR
28000+0.09 EUR
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MURF8L60 MURF8L60_C2105.pdf
MURF8L60
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
auf Bestellung 464 Stücke:
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9+2.57 EUR
13+1.62 EUR
100+1.06 EUR
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MURF8L60HC0G MURF8L60_C2105.pdf
MURF8L60HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Produkt ist nicht verfügbar
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SK515C M6 SK52C%20SERIES_R2212.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Produkt ist nicht verfügbar
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SK515C R6G SK52C%20SERIES_R2212.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT55B3V3 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B3V3 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Produkt ist nicht verfügbar
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BZT55B3V3 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B3V3 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Produkt ist nicht verfügbar
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SF46G SF41G SERIES_G2105.pdf
SF46G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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1250+0.46 EUR
2500+0.42 EUR
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SF46GH SF41G SERIES_G2105.pdf
SF46GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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1250+0.46 EUR
2500+0.42 EUR
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MBR25150CTHC0G MBR2535CT%20SERIES_K2104.pdf
MBR25150CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 25A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBRF15150CT MBRF1535CT SERIES_J2105.pdf
MBRF15150CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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MBRF15150CTHC0G MBRF1535CT%20SERIES_J2105.pdf
MBRF15150CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
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MBRF25150CT MBRF2535CT SERIES_L2105.pdf
MBRF25150CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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MBRF5150HC0G MBRF5100%20SERIES_H2105.pdf
MBRF5150HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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MBRF5150H
MBRF5150H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Produkt ist nicht verfügbar
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MBRF25150CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF25150CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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MBRF5150 C0G MBRF5100%20SERIES_H2105.pdf
MBRF5150 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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BZX585B3V3 RKG BZX585B2V4%20SERIES_C1607.pdf
BZX585B3V3 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 200MW SOD523F
Produkt ist nicht verfügbar
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SMCJ58CAHM6G SMCJ%20SERIES_S2104.pdf
SMCJ58CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Produkt ist nicht verfügbar
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SMCJ58CA R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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SRF20150 SRF2020%20SERIES_J2105.pdf
SRF20150
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Produkt ist nicht verfügbar
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TQM250NB06CR RLG
TQM250NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
Produkt ist nicht verfügbar
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TQM250NB06CR RLG
TQM250NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
auf Bestellung 2436 Stücke:
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5+4.94 EUR
10+4.44 EUR
100+3.57 EUR
500+2.93 EUR
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TSM250NB06CV RGG TSM250NB06CV_A2007.pdf
TSM250NB06CV RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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5000+0.45 EUR
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TSM250NB06CV RGG TSM250NB06CV_A2007.pdf
TSM250NB06CV RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 9954 Stücke:
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AnzahlPrivatkunde
11+1.95 EUR
18+1.23 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
2000+0.51 EUR
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TSM250NB06LCV RGG TSM250NB06LCV_A2008.pdf
TSM250NB06LCV RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
5000+0.45 EUR
10000+0.43 EUR
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TSM250NB06LCV RGG TSM250NB06LCV_A2008.pdf
TSM250NB06LCV RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.23 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
2000+0.51 EUR
Mindestbestellmenge: 11 Stücke
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