Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (23247) > Seite 308 nach 388

Wählen Sie Seite:   [  << Vorherige Seite ]  1 38 76 114 152 190 228 266 303 304 305 306 307 308 309 310 311 312 313 342 380 388  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
P4SMA39A P4SMA39A Taiwan Semiconductor Corporation Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 24
P4SMA10AH P4SMA10AH Taiwan Semiconductor Corporation P4SMAH%20SERIES_A2102.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SMA10A P4SMA10A Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BC857C RFG BC857C RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 45V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.051 EUR
6000+ 0.049 EUR
Mindestbestellmenge: 3000
BC857C RFG BC857C RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 45V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 8950 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
84+ 0.21 EUR
155+ 0.11 EUR
500+ 0.089 EUR
1000+ 0.062 EUR
Mindestbestellmenge: 59
TSM320N03CX TSM320N03CX Taiwan Semiconductor Corporation Description: 30V, 5.5A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V
Produkt ist nicht verfügbar
1.5KE200H 1.5KE200H Taiwan Semiconductor Corporation Description: 1500W, 200V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE200 1.5KE200 Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: 1500W, 200V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE200CH 1.5KE200CH Taiwan Semiconductor Corporation Description: 1500W, 200V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE200C 1.5KE200C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: 1500W, 200V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MUR360S MUR360S Taiwan Semiconductor Corporation MUR305S SERIES_J2212.pdf Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
25+ 0.71 EUR
100+ 0.49 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
ES1DV ES1DV Taiwan Semiconductor Corporation ES1DV_C2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 14970 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
39+ 0.45 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 31
BZX85C13 R0G BZX85C13 R0G Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 13V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Produkt ist nicht verfügbar
BZX85C13 R0G BZX85C13 R0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 13V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Produkt ist nicht verfügbar
TSM1NB60CW Taiwan Semiconductor Corporation Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60CH Taiwan Semiconductor Corporation Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60CP Taiwan Semiconductor Corporation Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT A3G TSM1NB60SCT A3G Taiwan Semiconductor Corporation TSM1NB60SCT_C1607.pdf Description: MOSFET N-CH 600V 500MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT A3G TSM1NB60SCT A3G Taiwan Semiconductor Corporation TSM1NB60SCT_C1607.pdf Description: MOSFET N-CH 600V 500MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT B0G TSM1NB60SCT B0G Taiwan Semiconductor Corporation TSM1NB60SCT_C1607.pdf Description: MOSFET N-CH 600V 500MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT A3 Taiwan Semiconductor Corporation TSM1NB60SCT_C1607.pdf Description: MOSFET N-CH 600V 500MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT B0 Taiwan Semiconductor Corporation TSM1NB60SCT_C1607.pdf Description: MOSFET N-CH 600V 500MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
MMBD4148SE RFG MMBD4148SE RFG Taiwan Semiconductor Corporation MMBD4148 SERIES_F2112.pdf Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 8960 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
78+ 0.23 EUR
159+ 0.11 EUR
500+ 0.092 EUR
1000+ 0.064 EUR
Mindestbestellmenge: 56
MMBD4148 RFG MMBD4148 RFG Taiwan Semiconductor Corporation MMBD4148 SERIES_F2112.pdf Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 9198 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
69+ 0.26 EUR
142+ 0.12 EUR
500+ 0.1 EUR
1000+ 0.072 EUR
Mindestbestellmenge: 48
1.5KE440C 1.5KE440C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: 1500W, 440V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 356V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 396V
Voltage - Clamping (Max) @ Ipp: 631V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TSM2328CX RFG TSM2328CX RFG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 1.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
6000+ 0.33 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 3000
TSM2328CX RFG TSM2328CX RFG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 1.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
auf Bestellung 21448 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
21+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 18
TSS54L-F0 RWG Taiwan Semiconductor Corporation Description: TAIWAN
Packaging: Bulk
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 1005
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
BZY55C22 RBG BZY55C22 RBG Taiwan Semiconductor Corporation Description: DIODE ZENER 22V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: 0805
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Produkt ist nicht verfügbar
ES2DV ES2DV Taiwan Semiconductor Corporation ES2DV_C2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
32+ 0.56 EUR
100+ 0.39 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 27
P6SMB33AH P6SMB33AH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5497 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
33+ 0.54 EUR
100+ 0.32 EUR
500+ 0.3 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 26
1V5KE82A 1V5KE82A Taiwan Semiconductor Corporation pdf.php?pn=1V5KE82A Description: TVS DIODE 70.1VWM 113VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5KE82A 1.5KE82A Taiwan Semiconductor Corporation media?resourcetype=datasheets&itemid=9d02c7d2-86a5-4bff-9251-966d6af02bf7&filename=littelfuse_tvs_diode_1_5ke_datasheet.pdf en.CD00000663.pdf ONSMS16195-1.pdf?t.download=true&u=5oefqw 1.5KE%20SERIES%20N0209%20REV.E.pdf 15ke68.pdf Description: TVS 1500W 82V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5KE160H 1.5KE160H Taiwan Semiconductor Corporation Description: 1500W, 160V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE160 1.5KE160 Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: 1500W, 160V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE160CH 1.5KE160CH Taiwan Semiconductor Corporation Description: 1500W, 160V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE160C 1.5KE160C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: 1500W, 160V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1BH ES1BH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.13 EUR
15000+ 0.11 EUR
Mindestbestellmenge: 7500
ES1B ES1B Taiwan Semiconductor Corporation ONSM-S-A0003539063-1.pdf?t.download=true&u=5oefqw ES1x.pdf ES1_1.pdf ES1(A-M)%20N0159%20REV.E.pdf es1a.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.13 EUR
Mindestbestellmenge: 7500
ES1B ES1B Taiwan Semiconductor Corporation ONSM-S-A0003539063-1.pdf?t.download=true&u=5oefqw ES1x.pdf ES1_1.pdf ES1(A-M)%20N0159%20REV.E.pdf es1a.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 12883 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
ES1BFSH ES1BFSH Taiwan Semiconductor Corporation Description: 35NS, 1A, 100V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
14000+0.14 EUR
Mindestbestellmenge: 14000
ES1BALH ES1BALH Taiwan Semiconductor Corporation Description: 35NS, 1A, 100V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
14000+0.14 EUR
Mindestbestellmenge: 14000
HER308G HER308G Taiwan Semiconductor Corporation HER301G SERIES_I2105.pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
23+ 0.77 EUR
100+ 0.54 EUR
500+ 0.42 EUR
Mindestbestellmenge: 20
HER308G HER308G Taiwan Semiconductor Corporation HER301G SERIES_I2105.pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.34 EUR
Mindestbestellmenge: 1250
SS34LH SS34LH Taiwan Semiconductor Corporation SS34LH SERIES_A2103.pdf Description: 3A, 40V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
GBPC4010M GBPC4010M Taiwan Semiconductor Corporation Description: 40A, 1000V, STANDARD BRIDGE RECT
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.06 EUR
10+ 5.93 EUR
25+ 5.59 EUR
Mindestbestellmenge: 3
GBPC4010 GBPC4010 Taiwan Semiconductor Corporation Description: 40A, 1000V, STANDARD BRIDGE RECT
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.06 EUR
10+ 5.93 EUR
25+ 5.59 EUR
Mindestbestellmenge: 3
HER204G HER204G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 3285 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
32+ 0.55 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 23
BZT52C6V8S BZT52C6V8S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_J2212.pdf Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
Produkt ist nicht verfügbar
BZX55C10 A0G BZX55C10 A0G Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 10V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Produkt ist nicht verfügbar
RS2MA RS2MA Taiwan Semiconductor Corporation RS2AA SERIES_I2304.pdf Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 14695 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
39+ 0.45 EUR
100+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 28
MMBT2907A RFG MMBT2907A RFG Taiwan Semiconductor Corporation MMBT2907A_C2001.pdf Description: TRANS PNP 60V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.059 EUR
6000+ 0.055 EUR
9000+ 0.045 EUR
Mindestbestellmenge: 3000
1.5KE62H 1.5KE62H Taiwan Semiconductor Corporation pdf.php?pn=1.5KE62 Description: 1500W, 62V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 50.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 55.8V
Voltage - Clamping (Max) @ Ipp: 89V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE62CH 1.5KE62CH Taiwan Semiconductor Corporation pdf.php?pn=1.5KE62C Description: 1500W, 62V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 50.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 55.8V
Voltage - Clamping (Max) @ Ipp: 89V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE62C 1.5KE62C Taiwan Semiconductor Corporation pdf.php?pn=1.5KE62C Description: 1500W, 62V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 50.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 55.8V
Voltage - Clamping (Max) @ Ipp: 89V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRAD545H MBRAD545H Taiwan Semiconductor Corporation Description: 5A, 45V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 302pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
4500+0.32 EUR
Mindestbestellmenge: 4500
MBRAD545H MBRAD545H Taiwan Semiconductor Corporation Description: 5A, 45V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 302pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
22+ 0.82 EUR
100+ 0.57 EUR
500+ 0.45 EUR
1000+ 0.36 EUR
2000+ 0.32 EUR
Mindestbestellmenge: 19
MBRAD8100H MBRAD8100H Taiwan Semiconductor Corporation MBRAD8100H_A2303.pdf Description: 8A, 100V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 198pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRAD8100H MBRAD8100H Taiwan Semiconductor Corporation MBRAD8100H_A2303.pdf Description: 8A, 100V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 198pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4495 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
20+ 0.92 EUR
100+ 0.64 EUR
500+ 0.5 EUR
1000+ 0.41 EUR
2000+ 0.36 EUR
Mindestbestellmenge: 17
MBRAD5150H MBRAD5150H Taiwan Semiconductor Corporation Description: 5A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
4500+0.36 EUR
Mindestbestellmenge: 4500
P4SMA39A
P4SMA39A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 24
P4SMA10AH P4SMAH%20SERIES_A2102.pdf
P4SMA10AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SMA10A P4SMA%20SERIES_S2102.pdf
P4SMA10A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BC857C RFG BC856A SERIES_I2001.pdf
BC857C RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.051 EUR
6000+ 0.049 EUR
Mindestbestellmenge: 3000
BC857C RFG BC856A SERIES_I2001.pdf
BC857C RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 8950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
59+0.3 EUR
84+ 0.21 EUR
155+ 0.11 EUR
500+ 0.089 EUR
1000+ 0.062 EUR
Mindestbestellmenge: 59
TSM320N03CX
TSM320N03CX
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 5.5A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V
Produkt ist nicht verfügbar
1.5KE200H
1.5KE200H
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 200V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE200 1.5KE SERIES_O2104.pdf
1.5KE200
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 200V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE200CH
1.5KE200CH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 200V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE200C 1.5KE SERIES_O2104.pdf
1.5KE200C
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 200V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MUR360S MUR305S SERIES_J2212.pdf
MUR360S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
25+ 0.71 EUR
100+ 0.49 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
ES1DV ES1DV_C2102.pdf
ES1DV
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 14970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
39+ 0.45 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 31
BZX85C13 R0G BZX85C3V3%20SERIES_H2301.pdf
BZX85C13 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Produkt ist nicht verfügbar
BZX85C13 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C13 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Produkt ist nicht verfügbar
TSM1NB60CW
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60CH
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60CP
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT A3G TSM1NB60SCT_C1607.pdf
TSM1NB60SCT A3G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 500MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT A3G TSM1NB60SCT_C1607.pdf
TSM1NB60SCT A3G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 500MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT B0G TSM1NB60SCT_C1607.pdf
TSM1NB60SCT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 500MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT A3 TSM1NB60SCT_C1607.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 500MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
TSM1NB60SCT B0 TSM1NB60SCT_C1607.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 500MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produkt ist nicht verfügbar
MMBD4148SE RFG MMBD4148 SERIES_F2112.pdf
MMBD4148SE RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 8960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
78+ 0.23 EUR
159+ 0.11 EUR
500+ 0.092 EUR
1000+ 0.064 EUR
Mindestbestellmenge: 56
MMBD4148 RFG MMBD4148 SERIES_F2112.pdf
MMBD4148 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 9198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
69+ 0.26 EUR
142+ 0.12 EUR
500+ 0.1 EUR
1000+ 0.072 EUR
Mindestbestellmenge: 48
1.5KE440C 1.5KE SERIES_O2104.pdf
1.5KE440C
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 440V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 356V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 396V
Voltage - Clamping (Max) @ Ipp: 631V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TSM2328CX RFG
TSM2328CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 1.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
6000+ 0.33 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 3000
TSM2328CX RFG
TSM2328CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 1.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
auf Bestellung 21448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
21+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 18
TSS54L-F0 RWG
Hersteller: Taiwan Semiconductor Corporation
Description: TAIWAN
Packaging: Bulk
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 1005
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
BZY55C22 RBG
BZY55C22 RBG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: 0805
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Produkt ist nicht verfügbar
ES2DV ES2DV_C2102.pdf
ES2DV
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
32+ 0.56 EUR
100+ 0.39 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 27
P6SMB33AH P6SMBH SERIES_A2102.pdf
P6SMB33AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
33+ 0.54 EUR
100+ 0.32 EUR
500+ 0.3 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 26
1V5KE82A pdf.php?pn=1V5KE82A
1V5KE82A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5KE82A media?resourcetype=datasheets&itemid=9d02c7d2-86a5-4bff-9251-966d6af02bf7&filename=littelfuse_tvs_diode_1_5ke_datasheet.pdf en.CD00000663.pdf ONSMS16195-1.pdf?t.download=true&u=5oefqw 1.5KE%20SERIES%20N0209%20REV.E.pdf 15ke68.pdf
1.5KE82A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS 1500W 82V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5KE160H
1.5KE160H
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 160V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE160 1.5KE SERIES_O2104.pdf
1.5KE160
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 160V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE160CH
1.5KE160CH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 160V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE160C 1.5KE SERIES_O2104.pdf
1.5KE160C
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 160V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1BH
ES1BH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.13 EUR
15000+ 0.11 EUR
Mindestbestellmenge: 7500
ES1B ONSM-S-A0003539063-1.pdf?t.download=true&u=5oefqw ES1x.pdf ES1_1.pdf ES1(A-M)%20N0159%20REV.E.pdf es1a.pdf
ES1B
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.13 EUR
Mindestbestellmenge: 7500
ES1B ONSM-S-A0003539063-1.pdf?t.download=true&u=5oefqw ES1x.pdf ES1_1.pdf ES1(A-M)%20N0159%20REV.E.pdf es1a.pdf
ES1B
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 12883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
ES1BFSH
ES1BFSH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14000+0.14 EUR
Mindestbestellmenge: 14000
ES1BALH
ES1BALH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14000+0.14 EUR
Mindestbestellmenge: 14000
HER308G HER301G SERIES_I2105.pdf
HER308G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.77 EUR
100+ 0.54 EUR
500+ 0.42 EUR
Mindestbestellmenge: 20
HER308G HER301G SERIES_I2105.pdf
HER308G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1250+0.34 EUR
Mindestbestellmenge: 1250
SS34LH SS34LH SERIES_A2103.pdf
SS34LH
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 40V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
GBPC4010M
GBPC4010M
Hersteller: Taiwan Semiconductor Corporation
Description: 40A, 1000V, STANDARD BRIDGE RECT
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.06 EUR
10+ 5.93 EUR
25+ 5.59 EUR
Mindestbestellmenge: 3
GBPC4010
GBPC4010
Hersteller: Taiwan Semiconductor Corporation
Description: 40A, 1000V, STANDARD BRIDGE RECT
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.06 EUR
10+ 5.93 EUR
25+ 5.59 EUR
Mindestbestellmenge: 3
HER204G HER201G SERIES_G2105.pdf
HER204G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 3285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
32+ 0.55 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 23
BZT52C6V8S BZT52C2V4S%20SERIES_J2212.pdf
BZT52C6V8S
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
Produkt ist nicht verfügbar
BZX55C10 A0G BZX55C2V0%20SERIES_E2301.pdf
BZX55C10 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Produkt ist nicht verfügbar
RS2MA RS2AA SERIES_I2304.pdf
RS2MA
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 14695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
39+ 0.45 EUR
100+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 28
MMBT2907A RFG MMBT2907A_C2001.pdf
MMBT2907A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 60V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.059 EUR
6000+ 0.055 EUR
9000+ 0.045 EUR
Mindestbestellmenge: 3000
1.5KE62H pdf.php?pn=1.5KE62
1.5KE62H
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 62V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 50.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 55.8V
Voltage - Clamping (Max) @ Ipp: 89V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE62CH pdf.php?pn=1.5KE62C
1.5KE62CH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 62V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 50.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 55.8V
Voltage - Clamping (Max) @ Ipp: 89V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE62C pdf.php?pn=1.5KE62C
1.5KE62C
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 62V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 50.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 55.8V
Voltage - Clamping (Max) @ Ipp: 89V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRAD545H
MBRAD545H
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 45V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 302pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4500+0.32 EUR
Mindestbestellmenge: 4500
MBRAD545H
MBRAD545H
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 45V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 302pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.97 EUR
22+ 0.82 EUR
100+ 0.57 EUR
500+ 0.45 EUR
1000+ 0.36 EUR
2000+ 0.32 EUR
Mindestbestellmenge: 19
MBRAD8100H MBRAD8100H_A2303.pdf
MBRAD8100H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 100V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 198pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRAD8100H MBRAD8100H_A2303.pdf
MBRAD8100H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 100V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 198pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.09 EUR
20+ 0.92 EUR
100+ 0.64 EUR
500+ 0.5 EUR
1000+ 0.41 EUR
2000+ 0.36 EUR
Mindestbestellmenge: 17
MBRAD5150H
MBRAD5150H
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4500+0.36 EUR
Mindestbestellmenge: 4500
Wählen Sie Seite:   [  << Vorherige Seite ]  1 38 76 114 152 190 228 266 303 304 305 306 307 308 309 310 311 312 313 342 380 388  [ Nächste Seite >> ]