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PU1DLW PU1DLW Taiwan Semiconductor Corporation PU1BLW SERIES_A2210.pdf Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DLW PU1DLW Taiwan Semiconductor Corporation PU1BLW SERIES_A2210.pdf Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DAH PU1DAH Taiwan Semiconductor Corporation PU1BAH SERIES_B2110.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU1DAH PU1DAH Taiwan Semiconductor Corporation PU1BAH SERIES_B2110.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU1DMH PU1DMH Taiwan Semiconductor Corporation PU1BMH%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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PU1DMH PU1DMH Taiwan Semiconductor Corporation PU1BMH%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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PU1DA PU1DA Taiwan Semiconductor Corporation PU1BA SERIES_A2210.pdf Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DA PU1DA Taiwan Semiconductor Corporation PU1BA SERIES_A2210.pdf Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DFS PU1DFS Taiwan Semiconductor Corporation PU1BFS SERIES_A2210.pdf Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DFS PU1DFS Taiwan Semiconductor Corporation PU1BFS SERIES_A2210.pdf Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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PU1DLS PU1DLS Taiwan Semiconductor Corporation PU1BLS SERIES_A2210.pdf Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
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PU1DLS PU1DLS Taiwan Semiconductor Corporation PU1BLS SERIES_A2210.pdf Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
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BZY55B5V6 RBG BZY55B5V6 RBG Taiwan Semiconductor Corporation pdf.php?pn=BZY55B5V6 Description: DIODE ZENER 5.6V 500MW 0805
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 0805
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
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BZY55B5V6 BZY55B5V6 Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_D2301.pdf Description: 0805 (CERAMICS), 500MW, 2%, SMAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 0805
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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BZT55B5V6 L0G BZT55B5V6 L0G Taiwan Semiconductor Corporation Description: DIODE ZENER 5.6V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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BZT55B5V6 BZT55B5V6 Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: QMMELF
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT55B5V6 L1G BZT55B5V6 L1G Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: DIODE ZENER 5.6V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD103CM3 RRG SD103CM3 RRG Taiwan Semiconductor Corporation SD103AM3 SERIES_A2003.pdf Description: DIODE SCHOTTKY 20V 350MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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SD103CM3 RRG SD103CM3 RRG Taiwan Semiconductor Corporation SD103AM3 SERIES_A2003.pdf Description: DIODE SCHOTTKY 20V 350MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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SD103BM3 RRG SD103BM3 RRG Taiwan Semiconductor Corporation SD103AM3SERIESA2003.pdf Description: DIODE SCHOTTKY 30V 350MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
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SD103BM3 RRG SD103BM3 RRG Taiwan Semiconductor Corporation SD103AM3SERIESA2003.pdf Description: DIODE SCHOTTKY 30V 350MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
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SK26AH SK26AH Taiwan Semiconductor Corporation SK22AH SERIES_C2307.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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BY254G BY254G Taiwan Semiconductor Corporation BY251G SERIES_D2105.pdf Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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TESD24VS2BT RFG TESD24VS2BT RFG Taiwan Semiconductor Corporation TESD24VS2BT_B2101.pdf Description: TVS DIODE 24VWM 70VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 70V
Power - Peak Pulse: 200W
Power Line Protection: No
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TESD24VS2BT RFG TESD24VS2BT RFG Taiwan Semiconductor Corporation TESD24VS2BT_B2101.pdf Description: TVS DIODE 24VWM 70VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 70V
Power - Peak Pulse: 200W
Power Line Protection: No
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RS3JB-T RS3JB-T Taiwan Semiconductor Corporation RS3DB-T SERIES_C2102.pdf Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS3JB-T RS3JB-T Taiwan Semiconductor Corporation RS3DB-T SERIES_C2102.pdf Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS3DB-T RS3DB-T Taiwan Semiconductor Corporation RS3DB-T SERIES_C2102.pdf Description: 150NS, 3A, 200V, FAST RECOVERY R
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GPA801HC0G GPA801HC0G Taiwan Semiconductor Corporation GPA801%20SERIES_G2103.pdf Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24FSH SS24FSH Taiwan Semiconductor Corporation SS24FSH SERIES_B2103.pdf Description: DIODE SCHOTTKY 40V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 124pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
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1.5SMC39H 1.5SMC39H Taiwan Semiconductor Corporation pdf.php?pn=1.5SMC39H Description: 1500W, 39V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC39CH 1.5SMC39CH Taiwan Semiconductor Corporation pdf.php?pn=1.5SMC39CH Description: 1500W, 39V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS1H15LW SS1H15LW Taiwan Semiconductor Corporation pdf.php?pn=SS1H15LW Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
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SS1H15LW SS1H15LW Taiwan Semiconductor Corporation pdf.php?pn=SS1H15LW Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
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SS1H15LS SS1H15LS Taiwan Semiconductor Corporation pdf.php?pn=SS1H15LS Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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SS1H15LS SS1H15LS Taiwan Semiconductor Corporation pdf.php?pn=SS1H15LS Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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SS1H15LSH SS1H15LSH Taiwan Semiconductor Corporation pdf.php?pn=SS1H15LSH Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: AEC-Q101
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SS1H15LSH SS1H15LSH Taiwan Semiconductor Corporation pdf.php?pn=SS1H15LSH Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: AEC-Q101
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BC807-25W RFG BC807-25W RFG Taiwan Semiconductor Corporation BC807-16W Series_D2102.pdf Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BC807-25W RFG BC807-25W RFG Taiwan Semiconductor Corporation BC807-16W Series_D2102.pdf Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BZV55B16 L0G BZV55B16 L0G Taiwan Semiconductor Corporation BZV55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 16V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Produkt ist nicht verfügbar
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EABS1J EABS1J Taiwan Semiconductor Corporation pdf.php?pn=EABS1J Description: BRIDGE RECT 1PHASE 600V 1A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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EABS1J EABS1J Taiwan Semiconductor Corporation pdf.php?pn=EABS1J Description: BRIDGE RECT 1PHASE 600V 1A ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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1.5KE18H Taiwan Semiconductor Corporation Description: TVS DIODE 14.5VWM 26.5VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59A
Voltage - Reverse Standoff (Typ): 14.5V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE18 1.5KE18 Taiwan Semiconductor Corporation Description: 1500W, 18V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59A
Voltage - Reverse Standoff (Typ): 14.5V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX585B6V2 RKG BZX585B6V2 RKG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 6.2V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
Produkt ist nicht verfügbar
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1N4753G R0G 1N4753G R0G Taiwan Semiconductor Corporation 1N4728G SERIES_G2301.pdf Description: DIODE ZENER 36V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
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1N4753G A0G 1N4753G A0G Taiwan Semiconductor Corporation 1N4740A SERIES_N1706.pdf Description: DIODE ZENER 36V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
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SR1204 SR1204 Taiwan Semiconductor Corporation SR1202 SERIES_G2105.pdf Description: DIODE SCHOTTKY 40V 12A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SFF1008GH SFF1008GH Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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SFF1008GAH SFF1008GAH Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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MURF8L60H MURF8L60H Taiwan Semiconductor Corporation MURF8L60_C2105.pdf Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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MURF880G MURF880G Taiwan Semiconductor Corporation MURF880G_C2105.pdf Description: DIODE STANDARD 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 57pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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P6SMB13AH P6SMB13AH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 11.1VWM 18.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB13A R5G P6SMB13A R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 11.1VWM 18.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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1SS400 RJG 1SS400 RJG Taiwan Semiconductor Corporation 1SS400_D2206.pdf Description: DIODE STD 100V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
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1SS400 RJG 1SS400 RJG Taiwan Semiconductor Corporation 1SS400_D2206.pdf Description: DIODE STD 100V 200MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
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1SS400 1SS400 Taiwan Semiconductor Corporation Description: DIODE STD 100V 200MA SOD523F
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-523F
Current - Average Rectified (Io): 200mA
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BZT52B10-G RHG BZT52B10-G RHG Taiwan Semiconductor Corporation pdf.php?pn=BZT52B10-G Description: DIODE ZENER 10V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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BZT52B10-G RHG BZT52B10-G RHG Taiwan Semiconductor Corporation pdf.php?pn=BZT52B10-G Description: DIODE ZENER 10V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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PU1DLW PU1BLW SERIES_A2210.pdf
PU1DLW
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DLW PU1BLW SERIES_A2210.pdf
PU1DLW
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DAH PU1BAH SERIES_B2110.pdf
PU1DAH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU1DAH PU1BAH SERIES_B2110.pdf
PU1DAH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU1DMH PU1BMH%20SERIES_C2103.pdf
PU1DMH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PU1DMH PU1BMH%20SERIES_C2103.pdf
PU1DMH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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PU1DA PU1BA SERIES_A2210.pdf
PU1DA
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DA PU1BA SERIES_A2210.pdf
PU1DA
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DFS PU1BFS SERIES_A2210.pdf
PU1DFS
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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PU1DFS PU1BFS SERIES_A2210.pdf
PU1DFS
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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PU1DLS PU1BLS SERIES_A2210.pdf
PU1DLS
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
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PU1DLS PU1BLS SERIES_A2210.pdf
PU1DLS
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 200V, ULTRA FAST RECOV
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
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BZY55B5V6 RBG pdf.php?pn=BZY55B5V6
BZY55B5V6 RBG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW 0805
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 0805
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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BZY55B5V6 BZY55B2V4%20SERIES_D2301.pdf
BZY55B5V6
Hersteller: Taiwan Semiconductor Corporation
Description: 0805 (CERAMICS), 500MW, 2%, SMAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 0805
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
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BZT55B5V6 L0G
BZT55B5V6 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
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BZT55B5V6 BZT55B2V4%20SERIES_I2301.pdf
BZT55B5V6
Hersteller: Taiwan Semiconductor Corporation
Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: QMMELF
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT55B5V6 L1G BZT55B2V4%20SERIES_I2301.pdf
BZT55B5V6 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD103CM3 RRG SD103AM3 SERIES_A2003.pdf
SD103CM3 RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 350MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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SD103CM3 RRG SD103AM3 SERIES_A2003.pdf
SD103CM3 RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 350MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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SD103BM3 RRG SD103AM3SERIESA2003.pdf
SD103BM3 RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 350MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
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SD103BM3 RRG SD103AM3SERIESA2003.pdf
SD103BM3 RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 350MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
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SK26AH SK22AH SERIES_C2307.pdf
SK26AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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BY254G BY251G SERIES_D2105.pdf
BY254G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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TESD24VS2BT RFG TESD24VS2BT_B2101.pdf
TESD24VS2BT RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 70VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 70V
Power - Peak Pulse: 200W
Power Line Protection: No
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TESD24VS2BT RFG TESD24VS2BT_B2101.pdf
TESD24VS2BT RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 70VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 70V
Power - Peak Pulse: 200W
Power Line Protection: No
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RS3JB-T RS3DB-T SERIES_C2102.pdf
RS3JB-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS3JB-T RS3DB-T SERIES_C2102.pdf
RS3JB-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS3DB-T RS3DB-T SERIES_C2102.pdf
RS3DB-T
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 3A, 200V, FAST RECOVERY R
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GPA801HC0G GPA801%20SERIES_G2103.pdf
GPA801HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24FSH SS24FSH SERIES_B2103.pdf
SS24FSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 124pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
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1.5SMC39H pdf.php?pn=1.5SMC39H
1.5SMC39H
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 39V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC39CH pdf.php?pn=1.5SMC39CH
1.5SMC39CH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 39V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS1H15LW pdf.php?pn=SS1H15LW
SS1H15LW
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
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SS1H15LW pdf.php?pn=SS1H15LW
SS1H15LW
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
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SS1H15LS pdf.php?pn=SS1H15LS
SS1H15LS
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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SS1H15LS pdf.php?pn=SS1H15LS
SS1H15LS
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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SS1H15LSH pdf.php?pn=SS1H15LSH
SS1H15LSH
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: AEC-Q101
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10000+0.23 EUR
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SS1H15LSH pdf.php?pn=SS1H15LSH
SS1H15LSH
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: AEC-Q101
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22+0.96 EUR
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BC807-25W RFG BC807-16W Series_D2102.pdf
BC807-25W RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BC807-25W RFG BC807-16W Series_D2102.pdf
BC807-25W RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BZV55B16 L0G BZV55B2V4 SERIES_G2301.pdf
BZV55B16 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Produkt ist nicht verfügbar
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EABS1J pdf.php?pn=EABS1J
EABS1J
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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EABS1J pdf.php?pn=EABS1J
EABS1J
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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16+1.36 EUR
18+1.17 EUR
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1.5KE18H
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14.5VWM 26.5VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59A
Voltage - Reverse Standoff (Typ): 14.5V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE18
1.5KE18
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 18V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59A
Voltage - Reverse Standoff (Typ): 14.5V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX585B6V2 RKG BZX585B2V4%20SERIES_C1607.pdf
BZX585B6V2 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
Produkt ist nicht verfügbar
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1N4753G R0G 1N4728G SERIES_G2301.pdf
1N4753G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
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1N4753G A0G 1N4740A SERIES_N1706.pdf
1N4753G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
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SR1204 SR1202 SERIES_G2105.pdf
SR1204
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 2977 Stücke:
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SFF1008GH
SFF1008GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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12+1.82 EUR
15+1.5 EUR
100+1.17 EUR
500+0.99 EUR
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SFF1008GAH
SFF1008GAH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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12+1.82 EUR
15+1.5 EUR
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500+0.99 EUR
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MURF8L60H MURF8L60_C2105.pdf
MURF8L60H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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9+2.57 EUR
50+1.2 EUR
100+1.06 EUR
500+0.83 EUR
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MURF880G MURF880G_C2105.pdf
MURF880G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 57pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 985 Stücke:
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P6SMB13AH P6SMBH SERIES_A2102.pdf
P6SMB13AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB13A R5G P6SMB%20SERIES_Q2209.pdf
P6SMB13A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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1SS400 RJG 1SS400_D2206.pdf
1SS400 RJG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 100V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
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1SS400 RJG 1SS400_D2206.pdf
1SS400 RJG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 100V 200MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 7684 Stücke:
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1SS400
1SS400
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 100V 200MA SOD523F
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-523F
Current - Average Rectified (Io): 200mA
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BZT52B10-G RHG pdf.php?pn=BZT52B10-G
BZT52B10-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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3000+0.087 EUR
6000+0.08 EUR
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BZT52B10-G RHG pdf.php?pn=BZT52B10-G
BZT52B10-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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