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1.5KE130H 1.5KE130H Taiwan Semiconductor Corporation Description: TVS DIODE 105VWM 187VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 187V
Voltage - Breakdown (Min): 117V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 105V
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE130 1.5KE130 Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 105VWM 187VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 187V
Voltage - Breakdown (Min): 117V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 105V
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE13CH 1.5KE13CH Taiwan Semiconductor Corporation Description: TVS DIODE 10.5VWM 19VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 11.7V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 10.5V
Current - Peak Pulse (10/1000µs): 82A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE130CH 1.5KE130CH Taiwan Semiconductor Corporation Description: 1500W, 130V, 10%, BIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 187V
Voltage - Breakdown (Min): 117V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 105V
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
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1.5KE130C 1.5KE130C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: 1500W, 130V, 10%, BIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 187V
Voltage - Breakdown (Min): 117V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 105V
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
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1.5KE13C 1.5KE13C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 10.5VWM 19VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 11.7V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 10.5V
Current - Peak Pulse (10/1000µs): 82A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
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SMA4S43AH SMA4S43AH Taiwan Semiconductor Corporation pdf.php?pn=SMA4S43AH Description: TVS DIODE 43VWM 69.8VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.1V
Voltage - Clamping (Max) @ Ipp: 69.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA4S43AH SMA4S43AH Taiwan Semiconductor Corporation pdf.php?pn=SMA4S43AH Description: TVS DIODE 43VWM 69.8VC SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.1V
Voltage - Clamping (Max) @ Ipp: 69.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA6S43AH SMA6S43AH Taiwan Semiconductor Corporation pdf.php?pn=SMA6S43AH Description: TVS DIODE 43VWM 69.8VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.1V
Voltage - Clamping (Max) @ Ipp: 69.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA6S43AH SMA6S43AH Taiwan Semiconductor Corporation pdf.php?pn=SMA6S43AH Description: TVS DIODE 43VWM 69.8VC SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.1V
Voltage - Clamping (Max) @ Ipp: 69.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLD6S43AH TLD6S43AH Taiwan Semiconductor Corporation pdf.php?pn=TLD6S43AH Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD6S43AH TLD6S43AH Taiwan Semiconductor Corporation pdf.php?pn=TLD6S43AH Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLD5S12AH TLD5S12AH Taiwan Semiconductor Corporation pdf.php?pn=TLD5S12AH Description: TVS DIODE 12VWM 19.9VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 2800W (2.8kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 181A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
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TLD5S12AH TLD5S12AH Taiwan Semiconductor Corporation pdf.php?pn=TLD5S12AH Description: TVS DIODE 12VWM 19.9VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 2800W (2.8kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 181A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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5.0SMDJ17AH 5.0SMDJ17AH Taiwan Semiconductor Corporation pdf.php?pn=5.0SMDJ17AH Description: 5000W, 19.9V, 5%, UNIDIRECTIONAL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 181A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1T7G 1T7G Taiwan Semiconductor Corporation 1T1G SERIES_H2104.pdf Description: DIODE STANDARD 1000V 1A TS1
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TS-1
Current - Average Rectified (Io): 1A
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46+0.46 EUR
77+0.27 EUR
124+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.098 EUR
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RB520S-30 Taiwan Semiconductor Corporation rb520s-30.pdf 5399_RB520S-30%20SOD-523.pdf RB520S-30%20Rev-0.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523F
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-523F
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DBL106GH Taiwan Semiconductor Corporation DBL101G SERIES_R2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
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50+0.63 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.4 EUR
2000+0.37 EUR
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HDBL106GH HDBL106GH Taiwan Semiconductor Corporation HDBL101G SERIES_G2103.pdf Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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17+1.29 EUR
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500+0.7 EUR
1000+0.64 EUR
2000+0.6 EUR
5000+0.55 EUR
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SF63G SF63G Taiwan Semiconductor Corporation pdf.php?pn=SF63G Description: DIODE GEN PURP 150V 6A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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SFS1004GH SFS1004GH Taiwan Semiconductor Corporation SFS1001GH SERIES_A2103.pdf Description: DIODE ARRAY GP 200V 10A TO263AB
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
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SFS1004GH SFS1004GH Taiwan Semiconductor Corporation SFS1001GH SERIES_A2103.pdf Description: DIODE ARRAY GP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SFS1004G SFS1004G Taiwan Semiconductor Corporation SFS1001G SERIES_I2103.pdf Description: DIODE ARRAY GP 200V 10A TO263AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
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SFS1004G SFS1004G Taiwan Semiconductor Corporation SFS1001G SERIES_I2103.pdf Description: DIODE ARRAY GP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SFS1604G SFS1604G Taiwan Semiconductor Corporation pdf.php?pn=SFS1604G Description: DIODE GEN PURP 200V 16A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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SFS1604G SFS1604G Taiwan Semiconductor Corporation pdf.php?pn=SFS1604G Description: DIODE GEN PURP 200V 16A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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10+2.09 EUR
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SFS1604GH SFS1604GH Taiwan Semiconductor Corporation pdf.php?pn=SFS1604GH Description: DIODE GEN PURP 200V 16A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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SFS1604GH SFS1604GH Taiwan Semiconductor Corporation pdf.php?pn=SFS1604GH Description: DIODE GEN PURP 200V 16A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SF2004G SF2004G Taiwan Semiconductor Corporation pdf.php?pn=SF2004G Description: DIODE GEN PURP 200V 20A TO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SFF2004GA SFF2004GA Taiwan Semiconductor Corporation SFF2004GA SERIES_F2105.pdf Description: DIODE ARRAY GP 200V 20A ITO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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SF64G SF64G Taiwan Semiconductor Corporation SF61G SERIES_G2105.pdf Description: DIODE STANDARD 200V 6A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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BZT52C2V4S R9G BZT52C2V4S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 2.4V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
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BZT52C2V4S R9G BZT52C2V4S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 2.4V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
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BZT52C2V4 RHG BZT52C2V4 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 2.4V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
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BZT52C2V4 RHG BZT52C2V4 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 2.4V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
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BZT52C2V4-G RHG BZT52C2V4-G RHG Taiwan Semiconductor Corporation BZT52C2V4%20-%20BZT52C75.pdf Description: DIODE ZENER 2.4V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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BZT52C2V4-G RHG BZT52C2V4-G RHG Taiwan Semiconductor Corporation BZT52C2V4%20-%20BZT52C75.pdf Description: DIODE ZENER 2.4V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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M3Z75VC RRG M3Z75VC RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: DIODE ZENER 75V 200MW SOD323F
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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M3Z75VC RRG M3Z75VC RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: DIODE ZENER 75V 200MW SOD323F
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
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1N5251B A0G 1N5251B A0G Taiwan Semiconductor Corporation pdf.php?pn=1N5251B Description: DIODE ZENER 22V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Produkt ist nicht verfügbar
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S1KF-T S1KF-T Taiwan Semiconductor Corporation pdf.php?pn=S1KF-T Description: 1A, 800V, STANDARD RECOVERY RECT
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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S1KF-T S1KF-T Taiwan Semiconductor Corporation pdf.php?pn=S1KF-T Description: 1A, 800V, STANDARD RECOVERY RECT
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 1A
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S1KH S1KH Taiwan Semiconductor Corporation pdf.php?pn=S1KH Description: DIODE GEN PURP 800V 1A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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S1KH S1KH Taiwan Semiconductor Corporation pdf.php?pn=S1KH Description: DIODE GEN PURP 800V 1A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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S1KALH S1KALH Taiwan Semiconductor Corporation pdf.php?pn=S1KALH Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
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S1KALH S1KALH Taiwan Semiconductor Corporation pdf.php?pn=S1KALH Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
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S1KL S1KL Taiwan Semiconductor Corporation pdf.php?pn=S1KL Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1KL S1KL Taiwan Semiconductor Corporation pdf.php?pn=S1KL Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1KAL S1KAL Taiwan Semiconductor Corporation pdf.php?pn=S1KAL Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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S1KAL S1KAL Taiwan Semiconductor Corporation pdf.php?pn=S1KAL Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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MMSZ5243B RHG MMSZ5243B RHG Taiwan Semiconductor Corporation MMSZ5221B series_H2007.pdf Description: DIODE ZENER 13V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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MMSZ5243B RHG MMSZ5243B RHG Taiwan Semiconductor Corporation MMSZ5221B series_H2007.pdf Description: DIODE ZENER 13V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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MMSZ5243B MMSZ5243B Taiwan Semiconductor Corporation MMSZ5221B%20SERIES_H2007.pdf Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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SMAJ100H SMAJ100H Taiwan Semiconductor Corporation pdf.php?pn=SMAJ100H Description: TVS DIODE 100VWM 179VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ100 SMAJ100 Taiwan Semiconductor Corporation pdf.php?pn=SMAJ100 Description: 300W, 123.5V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ100CH SMAJ100CH Taiwan Semiconductor Corporation pdf.php?pn=SMAJ100CH Description: TVS DIODE 100VWM 179VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 1.7A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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BZW06-171 BZW06-171 Taiwan Semiconductor Corporation pdf.php?pn=BZW06-171 Description: TVS DIODE 171VWM 353VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 353V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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BZW06-188 BZW06-188 Taiwan Semiconductor Corporation pdf.php?pn=BZW06-188 Description: TVS DIODE 188VWM 388VC DO204AC
Voltage - Breakdown (Min): 209V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 188V
Current - Peak Pulse (10/1000µs): 10.3A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 388V
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1N5241B A0G 1N5241B A0G Taiwan Semiconductor Corporation 1N5221B SERIES_H2301.pdf Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 8.4 V
Produkt ist nicht verfügbar
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BZX79B9V1 Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_G2304.pdf Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 0.5 µA @ 6 V
Produkt ist nicht verfügbar
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1.5KE130H
1.5KE130H
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 105VWM 187VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 187V
Voltage - Breakdown (Min): 117V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 105V
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE130 1.5KE SERIES_O2104.pdf
1.5KE130
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 105VWM 187VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 187V
Voltage - Breakdown (Min): 117V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 105V
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE13CH
1.5KE13CH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.5VWM 19VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 11.7V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 10.5V
Current - Peak Pulse (10/1000µs): 82A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE130CH
1.5KE130CH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 130V, 10%, BIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 187V
Voltage - Breakdown (Min): 117V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 105V
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE130C 1.5KE SERIES_O2104.pdf
1.5KE130C
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 130V, 10%, BIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 187V
Voltage - Breakdown (Min): 117V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 105V
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE13C 1.5KE SERIES_O2104.pdf
1.5KE13C
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.5VWM 19VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 11.7V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 10.5V
Current - Peak Pulse (10/1000µs): 82A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMA4S43AH pdf.php?pn=SMA4S43AH
SMA4S43AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.8VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.1V
Voltage - Clamping (Max) @ Ipp: 69.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA4S43AH pdf.php?pn=SMA4S43AH
SMA4S43AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.8VC SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.1V
Voltage - Clamping (Max) @ Ipp: 69.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA6S43AH pdf.php?pn=SMA6S43AH
SMA6S43AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.8VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.1V
Voltage - Clamping (Max) @ Ipp: 69.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMA6S43AH pdf.php?pn=SMA6S43AH
SMA6S43AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.8VC SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.1V
Voltage - Clamping (Max) @ Ipp: 69.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLD6S43AH pdf.php?pn=TLD6S43AH
TLD6S43AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLD6S43AH pdf.php?pn=TLD6S43AH
TLD6S43AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLD5S12AH pdf.php?pn=TLD5S12AH
TLD5S12AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 2800W (2.8kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 181A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLD5S12AH pdf.php?pn=TLD5S12AH
TLD5S12AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 2800W (2.8kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 181A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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5.0SMDJ17AH pdf.php?pn=5.0SMDJ17AH
5.0SMDJ17AH
Hersteller: Taiwan Semiconductor Corporation
Description: 5000W, 19.9V, 5%, UNIDIRECTIONAL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 181A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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1T7G 1T1G SERIES_H2104.pdf
1T7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A TS1
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TS-1
Current - Average Rectified (Io): 1A
auf Bestellung 4770 Stücke:
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46+0.46 EUR
77+0.27 EUR
124+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.098 EUR
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RB520S-30 rb520s-30.pdf 5399_RB520S-30%20SOD-523.pdf RB520S-30%20Rev-0.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOD523F
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-523F
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DBL106GH DBL101G SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 4985 Stücke:
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17+1.24 EUR
50+0.63 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.4 EUR
2000+0.37 EUR
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HDBL106GH HDBL101G SERIES_G2103.pdf
HDBL106GH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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11+1.9 EUR
17+1.29 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.6 EUR
5000+0.55 EUR
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SF63G pdf.php?pn=SF63G
SF63G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 6A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 1225 Stücke:
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18+1.21 EUR
20+1.06 EUR
100+0.74 EUR
500+0.62 EUR
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SFS1004GH SFS1001GH SERIES_A2103.pdf
SFS1004GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO263AB
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
auf Bestellung 1600 Stücke:
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AnzahlPrivatkunde
800+0.9 EUR
1600+0.79 EUR
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SFS1004GH SFS1001GH SERIES_A2103.pdf
SFS1004GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1600 Stücke:
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AnzahlPrivatkunde
8+2.92 EUR
12+1.84 EUR
100+1.23 EUR
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SFS1004G SFS1001G SERIES_I2103.pdf
SFS1004G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO263AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
auf Bestellung 800 Stücke:
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SFS1004G SFS1001G SERIES_I2103.pdf
SFS1004G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SFS1604G pdf.php?pn=SFS1604G
SFS1604G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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800+1.38 EUR
1600+1.13 EUR
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SFS1604G pdf.php?pn=SFS1604G
SFS1604G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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10+2.09 EUR
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SFS1604GH pdf.php?pn=SFS1604GH
SFS1604GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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800+1.38 EUR
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SFS1604GH pdf.php?pn=SFS1604GH
SFS1604GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1596 Stücke:
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9+2.56 EUR
10+2.09 EUR
100+1.63 EUR
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SF2004G pdf.php?pn=SF2004G
SF2004G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A TO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke:
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9+2.37 EUR
11+1.93 EUR
100+1.5 EUR
500+1.27 EUR
1000+1.04 EUR
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SFF2004GA SFF2004GA SERIES_F2105.pdf
SFF2004GA
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 20A ITO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 990 Stücke:
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8+2.95 EUR
11+2 EUR
100+1.4 EUR
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SF64G SF61G SERIES_G2105.pdf
SF64G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 6A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 6250 Stücke:
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1250+0.57 EUR
2500+0.52 EUR
3750+0.5 EUR
6250+0.46 EUR
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BZT52C2V4S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C2V4S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52C2V4S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C2V4S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
auf Bestellung 9900 Stücke:
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53+0.39 EUR
84+0.25 EUR
135+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
2000+0.088 EUR
5000+0.076 EUR
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BZT52C2V4 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C2V4 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
auf Bestellung 3000 Stücke:
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3000+0.083 EUR
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BZT52C2V4 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C2V4 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 µA @ 1 V
auf Bestellung 5901 Stücke:
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50+0.42 EUR
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134+0.15 EUR
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BZT52C2V4-G RHG BZT52C2V4%20-%20BZT52C75.pdf
BZT52C2V4-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 6000 Stücke:
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3000+0.086 EUR
6000+0.077 EUR
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BZT52C2V4-G RHG BZT52C2V4%20-%20BZT52C75.pdf
BZT52C2V4-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 6000 Stücke:
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50+0.42 EUR
81+0.26 EUR
130+0.17 EUR
500+0.12 EUR
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M3Z75VC RRG M3Z2V0C SERIES_B2008.pdf
M3Z75VC RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD323F
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.071 EUR
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M3Z75VC RRG M3Z2V0C SERIES_B2008.pdf
M3Z75VC RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD323F
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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59+0.36 EUR
96+0.21 EUR
154+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
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1N5251B A0G pdf.php?pn=1N5251B
1N5251B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Produkt ist nicht verfügbar
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S1KF-T pdf.php?pn=S1KF-T
S1KF-T
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 800V, STANDARD RECOVERY RECT
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
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7500+0.09 EUR
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S1KF-T pdf.php?pn=S1KF-T
S1KF-T
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 800V, STANDARD RECOVERY RECT
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 1A
auf Bestellung 7500 Stücke:
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38+0.57 EUR
53+0.39 EUR
109+0.19 EUR
500+0.17 EUR
1000+0.11 EUR
2000+0.098 EUR
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S1KH pdf.php?pn=S1KH
S1KH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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7500+0.11 EUR
15000+0.088 EUR
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S1KH pdf.php?pn=S1KH
S1KH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
45+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.13 EUR
2000+0.12 EUR
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S1KALH pdf.php?pn=S1KALH
S1KALH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S1KALH pdf.php?pn=S1KALH
S1KALH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 109 Stücke:
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29+0.74 EUR
42+0.5 EUR
100+0.25 EUR
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S1KL pdf.php?pn=S1KL
S1KL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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S1KL pdf.php?pn=S1KL
S1KL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 17087 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
39+0.55 EUR
100+0.27 EUR
500+0.23 EUR
1000+0.17 EUR
2000+0.14 EUR
5000+0.13 EUR
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S1KAL pdf.php?pn=S1KAL
S1KAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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S1KAL pdf.php?pn=S1KAL
S1KAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
39+0.55 EUR
100+0.27 EUR
500+0.23 EUR
1000+0.17 EUR
2000+0.14 EUR
5000+0.13 EUR
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MMSZ5243B RHG MMSZ5221B series_H2007.pdf
MMSZ5243B RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.079 EUR
6000+0.073 EUR
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MMSZ5243B RHG MMSZ5221B series_H2007.pdf
MMSZ5243B RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
66+0.32 EUR
135+0.15 EUR
500+0.13 EUR
1000+0.09 EUR
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MMSZ5243B MMSZ5221B%20SERIES_H2007.pdf
MMSZ5243B
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Produkt ist nicht verfügbar
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SMAJ100H pdf.php?pn=SMAJ100H
SMAJ100H
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 100VWM 179VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ100 pdf.php?pn=SMAJ100
SMAJ100
Hersteller: Taiwan Semiconductor Corporation
Description: 300W, 123.5V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ100CH pdf.php?pn=SMAJ100CH
SMAJ100CH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 100VWM 179VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 1.7A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZW06-171 pdf.php?pn=BZW06-171
BZW06-171
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 353V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZW06-188 pdf.php?pn=BZW06-188
BZW06-188
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 188VWM 388VC DO204AC
Voltage - Breakdown (Min): 209V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 188V
Current - Peak Pulse (10/1000µs): 10.3A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 388V
Produkt ist nicht verfügbar
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1N5241B A0G 1N5221B SERIES_H2301.pdf
1N5241B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 8.4 V
Produkt ist nicht verfügbar
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BZX79B9V1 BZX79B2V4%20SERIES_G2304.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 0.5 µA @ 6 V
Produkt ist nicht verfügbar
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