Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (22909) > Seite 338 nach 382
Foto | Bezeichnung | Hersteller | Beschreibung |
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1N4757A | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 51V 1W DO204AL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 51 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 38.8 V |
Produkt ist nicht verfügbar |
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ES1BH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1BFSH | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 100V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1BALH | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 100V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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RB751V-40 RRG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 30MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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RB751V-40 RRG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 30MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
auf Bestellung 11893 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM070NB04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 15A/75A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM070NB04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 15A/75A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TS2940CZ33 | Taiwan Semiconductor Corporation |
Description: 1A 3.3V ULTRA LOW DROPOUT VOLTAG Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 15 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): 3.3V Control Features: Current Limit Voltage Dropout (Max): 0.8V @ 800mA Protection Features: Over Current, Over Temperature, Over Voltage Current - Supply (Max): 110 mA |
Produkt ist nicht verfügbar |
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TS2940CZ50 | Taiwan Semiconductor Corporation |
Description: 1A 5V ULTRA LOW DROPOUT VOLTAGE Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 15 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Voltage Dropout (Max): 0.8V @ 800mA Protection Features: Over Current, Over Temperature, Over Voltage Current - Supply (Max): 110 mA |
Produkt ist nicht verfügbar |
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MUR440SH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 4A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MUR440S | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 4A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 2933 Stücke: Lieferzeit 10-14 Tag (e) |
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MUR440H | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 4A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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1SMA4749H | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 24V 1.25W DO214AC Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMA4749 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 24V 1.25W DO214AC Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V |
Produkt ist nicht verfügbar |
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HS1MLWH | Taiwan Semiconductor Corporation |
Description: 75NS, 1A, 1000V, HIGH EFFICIENT Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 19844 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1MF-T | Taiwan Semiconductor Corporation |
Description: 75NS, 1A, 1000V, HIGH EFFICIENT Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1MALH | Taiwan Semiconductor Corporation |
Description: 75NS, 1A, 1000V, HIGH EFFICIENT Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 27900 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1MH | Taiwan Semiconductor Corporation |
Description: 75NS, 1A, 1000V, HIGH EFFICIENT Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSC5804DCP ROG | Taiwan Semiconductor Corporation |
Description: TRANS NPN 450V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 3.5A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 200mA, 3V Supplier Device Package: TO-252, (D-Pak) Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 45 W |
Produkt ist nicht verfügbar |
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RMB4S | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 400V 500MA MBS Packaging: Cut Tape (CT) Package / Case: 4-BESOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MBS Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RMB4SH | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 400V 500MA MBS Packaging: Cut Tape (CT) Package / Case: 4-BESOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MBS Grade: Automotive Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857B RFG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 45V 0.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857B RFG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 45V 0.1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52B3V3S R9G | Taiwan Semiconductor Corporation |
Description: SOD-323F, 200MW, 2%, SMALL SIGNA Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-323F Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V |
Produkt ist nicht verfügbar |
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BZT52B3V3S R9G | Taiwan Semiconductor Corporation |
Description: SOD-323F, 200MW, 2%, SMALL SIGNA Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-323F Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V |
auf Bestellung 9988 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52B3V3-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 410MW SOD123 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
Produkt ist nicht verfügbar |
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BZT52B3V3-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 410MW SOD123 Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4936G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 9500 Stücke: Lieferzeit 10-14 Tag (e) |
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5.0SMDJ85AH | Taiwan Semiconductor Corporation |
Description: 5000W, 99.2V, 5%, UNIDIRECTIONAL Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36.5A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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1N4729G R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.6V 1W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TA) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
Produkt ist nicht verfügbar |
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1N4729G A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.6V 1W DO204AL Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TA) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
Produkt ist nicht verfügbar |
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SMAJ51H | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 91.1VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 91.1V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMAJ51 | Taiwan Semiconductor Corporation |
Description: 400W, 63V, 10%, UNIDIRECTIONAL, Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 91.1V Power - Peak Pulse: 400W Power Line Protection: No |
Produkt ist nicht verfügbar |
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BZT52C27S R9G | Taiwan Semiconductor Corporation |
Description: SOD-323F, 200MW, 5%, SMALL SIGNA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323F Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V |
Produkt ist nicht verfügbar |
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BZT52C27S R9G | Taiwan Semiconductor Corporation |
Description: SOD-323F, 200MW, 5%, SMALL SIGNA Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323F Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V |
Produkt ist nicht verfügbar |
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BZT52C27-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 350MW SOD123 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-123 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V |
Produkt ist nicht verfügbar |
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BZT52C27-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 350MW SOD123 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-123 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V |
Produkt ist nicht verfügbar |
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BZT52C27K RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 200MW SOD523F Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-523F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
Produkt ist nicht verfügbar |
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BZT52C27K RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 200MW SOD523F Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-523F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
Produkt ist nicht verfügbar |
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BZT52C27S | Taiwan Semiconductor Corporation |
Description: SOD-323F, 200MW, 5%, SMALL SIGNA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323F Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V |
Produkt ist nicht verfügbar |
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BZT52C27 | Taiwan Semiconductor Corporation |
Description: SOD-123F, 500MW, 5%, SMALL SIGNA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V |
Produkt ist nicht verfügbar |
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BZT52C27-G | Taiwan Semiconductor Corporation |
Description: SOD-123, 350MW, 5%, SMALL SIGNAL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-123 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V |
Produkt ist nicht verfügbar |
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BZT52C27K | Taiwan Semiconductor Corporation |
Description: SOD-523F, 200MW, 5%, SMALL SIGNA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-523F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
Produkt ist nicht verfügbar |
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1PGSMB5940H | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 3W DO214AA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 53 Ohms Supplier Device Package: DO-214AA (SMB) Grade: Automotive Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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1N4732G R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.7V 1W DO204AL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TA) Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
Produkt ist nicht verfügbar |
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1N4732G A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.7V 1W DO204AL Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TA) Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
Produkt ist nicht verfügbar |
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GBL205H | Taiwan Semiconductor Corporation |
Description: 2A, 600V, STANDARD BRIDGE RECTIF Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Grade: Automotive Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5250B RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 20V 500MW SOD123F Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5250B RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 20V 500MW SOD123F Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5250B | Taiwan Semiconductor Corporation |
Description: SOD-123F, 500MW, 5%, SMALL SIGNA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
Produkt ist nicht verfügbar |
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UG06A | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 600MA TS-1 Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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UG06D | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 600MA TS-1 Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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UG06C | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 600MA TS-1 Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
Produkt ist nicht verfügbar |
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UG06B | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 600MA TS-1 Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU1506 | Taiwan Semiconductor Corporation |
Description: 15A, 800V, STANDARD BRIDGE RECTI Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 4779 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD6S30AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO218AB Packaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 95A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 3600W (3.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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TLD6S30AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO218AB Packaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 95A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 3600W (3.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX55B6V8 | Taiwan Semiconductor Corporation |
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V |
Produkt ist nicht verfügbar |
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BZX55B6V8 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 500MW DO35 Tolerance: ±2% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V |
Produkt ist nicht verfügbar |
1N4757A |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 38.8 V
Description: DIODE ZENER 51V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 38.8 V
Produkt ist nicht verfügbar
ES1BH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
ES1BFSH |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.24 EUR |
1000+ | 0.19 EUR |
2000+ | 0.17 EUR |
5000+ | 0.16 EUR |
ES1BALH |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.24 EUR |
1000+ | 0.19 EUR |
2000+ | 0.17 EUR |
5000+ | 0.16 EUR |
RB751V-40 RRG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 30MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SCHOTTKY 40V 30MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.083 EUR |
6000+ | 0.077 EUR |
9000+ | 0.064 EUR |
RB751V-40 RRG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 30MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SCHOTTKY 40V 30MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
auf Bestellung 11893 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
52+ | 0.34 EUR |
106+ | 0.17 EUR |
500+ | 0.14 EUR |
1000+ | 0.096 EUR |
TSM070NB04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.61 EUR |
5000+ | 0.58 EUR |
TSM070NB04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.48 EUR |
15+ | 1.2 EUR |
100+ | 0.94 EUR |
500+ | 0.79 EUR |
1000+ | 0.65 EUR |
TS2940CZ33 |
Hersteller: Taiwan Semiconductor Corporation
Description: 1A 3.3V ULTRA LOW DROPOUT VOLTAG
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 110 mA
Description: 1A 3.3V ULTRA LOW DROPOUT VOLTAG
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 110 mA
Produkt ist nicht verfügbar
TS2940CZ50 |
Hersteller: Taiwan Semiconductor Corporation
Description: 1A 5V ULTRA LOW DROPOUT VOLTAGE
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 110 mA
Description: 1A 5V ULTRA LOW DROPOUT VOLTAGE
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 110 mA
Produkt ist nicht verfügbar
MUR440SH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MUR440S |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 2933 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.97 EUR |
22+ | 0.83 EUR |
100+ | 0.58 EUR |
500+ | 0.45 EUR |
1000+ | 0.37 EUR |
MUR440H |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1SMA4749H |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
34+ | 0.53 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
1SMA4749 |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Description: DIODE ZENER 24V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Produkt ist nicht verfügbar
HS1MLWH |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 19844 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.56 EUR |
46+ | 0.39 EUR |
100+ | 0.2 EUR |
500+ | 0.16 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
5000+ | 0.095 EUR |
HS1MF-T |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
45+ | 0.4 EUR |
100+ | 0.19 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
2000+ | 0.098 EUR |
HS1MALH |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 27900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
39+ | 0.46 EUR |
100+ | 0.23 EUR |
500+ | 0.19 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
5000+ | 0.11 EUR |
HS1MH |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
37+ | 0.48 EUR |
100+ | 0.24 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
2000+ | 0.12 EUR |
TSC5804DCP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 450V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 200mA, 3V
Supplier Device Package: TO-252, (D-Pak)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 45 W
Description: TRANS NPN 450V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 200mA, 3V
Supplier Device Package: TO-252, (D-Pak)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 45 W
Produkt ist nicht verfügbar
RMB4S |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 500MA MBS
Packaging: Cut Tape (CT)
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBS
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 500MA MBS
Packaging: Cut Tape (CT)
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBS
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1 EUR |
21+ | 0.86 EUR |
100+ | 0.6 EUR |
500+ | 0.5 EUR |
1000+ | 0.42 EUR |
RMB4SH |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 500MA MBS
Packaging: Cut Tape (CT)
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBS
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1P 400V 500MA MBS
Packaging: Cut Tape (CT)
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBS
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
22+ | 0.83 EUR |
100+ | 0.58 EUR |
500+ | 0.45 EUR |
1000+ | 0.37 EUR |
BC857B RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.052 EUR |
6000+ | 0.049 EUR |
9000+ | 0.042 EUR |
BC857B RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 0.3 EUR |
82+ | 0.21 EUR |
153+ | 0.12 EUR |
500+ | 0.091 EUR |
1000+ | 0.063 EUR |
BZT52B3V3S R9G |
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 2%, SMALL SIGNA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V
Description: SOD-323F, 200MW, 2%, SMALL SIGNA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V
Produkt ist nicht verfügbar
BZT52B3V3S R9G |
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 2%, SMALL SIGNA
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V
Description: SOD-323F, 200MW, 2%, SMALL SIGNA
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V
auf Bestellung 9988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.37 EUR |
70+ | 0.25 EUR |
144+ | 0.12 EUR |
500+ | 0.1 EUR |
1000+ | 0.071 EUR |
2000+ | 0.062 EUR |
5000+ | 0.057 EUR |
BZT52B3V3-G RHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
BZT52B3V3-G RHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
58+ | 0.31 EUR |
118+ | 0.15 EUR |
500+ | 0.12 EUR |
1000+ | 0.087 EUR |
1N4936G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
42+ | 0.42 EUR |
100+ | 0.21 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
5.0SMDJ85AH |
Hersteller: Taiwan Semiconductor Corporation
Description: 5000W, 99.2V, 5%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 5000W, 99.2V, 5%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1N4729G R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 3.6V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
1N4729G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 1W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 3.6V 1W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
SMAJ51H |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 91.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 91.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 51VWM 91.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 91.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ51 |
Hersteller: Taiwan Semiconductor Corporation
Description: 400W, 63V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 91.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: 400W, 63V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 91.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BZT52C27S R9G |
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
Produkt ist nicht verfügbar
BZT52C27S R9G |
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
Produkt ist nicht verfügbar
BZT52C27-G RHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Description: DIODE ZENER 27V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Produkt ist nicht verfügbar
BZT52C27-G RHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Description: DIODE ZENER 27V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Produkt ist nicht verfügbar
BZT52C27K RKG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: DIODE ZENER 27V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
BZT52C27K RKG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: DIODE ZENER 27V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
BZT52C27S |
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
Produkt ist nicht verfügbar
BZT52C27 |
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
Produkt ist nicht verfügbar
BZT52C27-G |
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 350MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Description: SOD-123, 350MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Produkt ist nicht verfügbar
BZT52C27K |
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-523F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SOD-523F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
1PGSMB5940H |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Qualification: AEC-Q101
Description: DIODE ZENER 43V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1N4732G R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 4.7V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
1N4732G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 4.7V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
GBL205H |
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 600V, STANDARD BRIDGE RECTIF
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: 2A, 600V, STANDARD BRIDGE RECTIF
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.14 EUR |
18+ | 0.98 EUR |
100+ | 0.68 EUR |
500+ | 0.57 EUR |
1200+ | 0.48 EUR |
MMSZ5250B RHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ZENER 20V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.067 EUR |
6000+ | 0.062 EUR |
MMSZ5250B RHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ZENER 20V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
65+ | 0.27 EUR |
133+ | 0.13 EUR |
500+ | 0.11 EUR |
1000+ | 0.077 EUR |
MMSZ5250B |
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Produkt ist nicht verfügbar
UG06A |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
UG06D |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
UG06C |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
UG06B |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
GBU1506 |
Hersteller: Taiwan Semiconductor Corporation
Description: 15A, 800V, STANDARD BRIDGE RECTI
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: 15A, 800V, STANDARD BRIDGE RECTI
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 4779 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.13 EUR |
20+ | 1.75 EUR |
100+ | 1.36 EUR |
500+ | 1.15 EUR |
1000+ | 0.94 EUR |
2000+ | 0.88 EUR |
TLD6S30AH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TLD6S30AH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.47 EUR |
10+ | 4.6 EUR |
100+ | 3.72 EUR |
BZX55B6V8 |
Hersteller: Taiwan Semiconductor Corporation
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Produkt ist nicht verfügbar
BZX55B6V8 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Produkt ist nicht verfügbar