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HS1DF-T HS1DF-T Taiwan Semiconductor Corporation HS1DF-T SERIES_B2103.pdf Description: DIODE STANDARD 200V 1A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 7463 Stücke:
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39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
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HSMLW HSMLW Taiwan Semiconductor Corporation Description: 75NS, 0.8A, 1000V, HIGH EFFICIEN
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 20000 Stücke:
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10000+0.11 EUR
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HSMLW HSMLW Taiwan Semiconductor Corporation Description: 75NS, 0.8A, 1000V, HIGH EFFICIEN
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 20000 Stücke:
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42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
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2000+0.13 EUR
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HSJLW HSJLW Taiwan Semiconductor Corporation Description: 75NS, 0.8A, 600V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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HSJLW HSJLW Taiwan Semiconductor Corporation Description: 75NS, 0.8A, 600V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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HS1JLWH HS1JLWH Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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HSKLWH HSKLWH Taiwan Semiconductor Corporation pdf.php?pn=HSKLWH Description: 75NS, 0.8A, 800V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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HSKLWH HSKLWH Taiwan Semiconductor Corporation pdf.php?pn=HSKLWH Description: 75NS, 0.8A, 800V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
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30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
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HSGLWH HSGLWH Taiwan Semiconductor Corporation Description: 50NS, 0.8A, 400V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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HSGLWH HSGLWH Taiwan Semiconductor Corporation Description: 50NS, 0.8A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
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1000+0.15 EUR
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HSDLWH HSDLWH Taiwan Semiconductor Corporation HSDLWH SERIES_A2103.pdf Description: DIODE STD 200V 800MA SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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26+0.69 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
5000+0.14 EUR
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HS1DLWH HS1DLWH Taiwan Semiconductor Corporation HS1DLWH SERIES_A2103.pdf Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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10000+0.12 EUR
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HS1DLWH HS1DLWH Taiwan Semiconductor Corporation HS1DLWH SERIES_A2103.pdf Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.13 EUR
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HSDLW HSDLW Taiwan Semiconductor Corporation HSDLW SERIES_C2103.pdf Description: DIODE STD 200V 800MA SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 20000 Stücke:
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43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
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2000+0.16 EUR
5000+0.14 EUR
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HSKLW HSKLW Taiwan Semiconductor Corporation Description: 75NS, 0.8A, 800V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 20000 Stücke:
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10000+0.11 EUR
Mindestbestellmenge: 10000
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HSKLW HSKLW Taiwan Semiconductor Corporation Description: 75NS, 0.8A, 800V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
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HSMLWH HSMLWH Taiwan Semiconductor Corporation Description: 75NS, 0.8A, 1000V, HIGH EFFICIEN
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.11 EUR
Mindestbestellmenge: 10000
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HSMLWH HSMLWH Taiwan Semiconductor Corporation Description: 75NS, 0.8A, 1000V, HIGH EFFICIEN
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
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SMCJ15CAH SMCJ15CAH Taiwan Semiconductor Corporation SMCJH SERIES_A2102.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 64A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ36CAH SMDJ36CAH Taiwan Semiconductor Corporation pdf.php?pn=SMDJ36CAH Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ36CA M6G SMDJ36CA M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ36CAHM6G SMDJ36CAHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ36CA R7G SMDJ36CA R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ36CAHR7G SMDJ36CAHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S3MBH S3MBH Taiwan Semiconductor Corporation S3ABH SERIES_B2207.pdf Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 70 Stücke:
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22+0.81 EUR
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HS3MBH HS3MBH Taiwan Semiconductor Corporation HS3ABH SERIES_A2102.pdf Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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SA15AH SA15AH Taiwan Semiconductor Corporation SA SERIES_L2105.pdf Description: TVS DIODE 15VWM 24.4VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SA15A A0G SA15A A0G Taiwan Semiconductor Corporation Description: TVS DIODE 15VWM 24.4VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 24.4V
Voltage - Breakdown (Min): 16.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 21A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SA15AHA0G SA15AHA0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 15VWM 24.4VC DO204AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 24.4V
Voltage - Breakdown (Min): 16.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 21A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
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SA15A B0G SA15A B0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 15VWM 24.4VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
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SA15AHB0G SA15AHB0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 15VWM 24.4VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C3V9S R9G BZT52C3V9S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 3.9V 200MW SOD323F
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZT52C3V9S R9G BZT52C3V9S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 3.9V 200MW SOD323F
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
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BZT52C3V9 RHG BZT52C3V9 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 3.9V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
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BZT52C3V9 RHG BZT52C3V9 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 3.9V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
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BZT52C3V9-G RHG BZT52C3V9-G RHG Taiwan Semiconductor Corporation BZT52C2V4%20-%20BZT52C75.pdf Description: DIODE ZENER 3.9V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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BZT52C3V9-G RHG BZT52C3V9-G RHG Taiwan Semiconductor Corporation BZT52C2V4%20-%20BZT52C75.pdf Description: DIODE ZENER 3.9V 350MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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BZT52C3V9K RKG BZT52C3V9K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 3.9V 200MW SOD523F
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
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BZT52C3V9K RKG BZT52C3V9K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 3.9V 200MW SOD523F
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BZT52C3V9-G BZT52C3V9-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: DIODE ZENER 3.9V 350MW SOD123
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
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BZT52C3V9K BZT52C3V9K Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_G2402.pdf Description: DIODE ZENER 3.9V 200MW SOD523F
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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HER205G HER205G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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DBLS156G DBLS156G Taiwan Semiconductor Corporation DBLS151G SERIES_M2103.pdf Description: BRIDGE RECT 1P 800V 1.5A DBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
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DBLS158G DBLS158G Taiwan Semiconductor Corporation DBLS151G SERIES_M2103.pdf Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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RB751M5-40 RSG RB751M5-40 RSG Taiwan Semiconductor Corporation RB751M5-40_A2005.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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RB751M5-40 RSG RB751M5-40 RSG Taiwan Semiconductor Corporation RB751M5-40_A2005.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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RB520SM5-40 RSG RB520SM5-40 RSG Taiwan Semiconductor Corporation RB520SM5-40_A2004.pdf Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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RB520SM5-40 RSG RB520SM5-40 RSG Taiwan Semiconductor Corporation RB520SM5-40_A2004.pdf Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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TSD3G TSD3G Taiwan Semiconductor Corporation pdf.php?pn=TSD3G Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3G TSD3G Taiwan Semiconductor Corporation pdf.php?pn=TSD3G Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3GAL TSD3GAL Taiwan Semiconductor Corporation pdf.php?pn=TSD3GAL Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3GAL TSD3GAL Taiwan Semiconductor Corporation pdf.php?pn=TSD3GAL Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3GALH TSD3GALH Taiwan Semiconductor Corporation pdf.php?pn=TSD3GALH Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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TSD3GALH TSD3GALH Taiwan Semiconductor Corporation pdf.php?pn=TSD3GALH Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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TSD3GFS TSD3GFS Taiwan Semiconductor Corporation pdf.php?pn=TSD3GFS Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GFS TSD3GFS Taiwan Semiconductor Corporation pdf.php?pn=TSD3GFS Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GFSH TSD3GFSH Taiwan Semiconductor Corporation pdf.php?pn=TSD3GFSH Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSD3GFSH TSD3GFSH Taiwan Semiconductor Corporation pdf.php?pn=TSD3GFSH Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B0540WF RHG B0540WF RHG Taiwan Semiconductor Corporation B0520LWF SERIES_C14.pdf Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 3000 Stücke:
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3000+0.12 EUR
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B0540WF RHG B0540WF RHG Taiwan Semiconductor Corporation B0520LWF SERIES_C14.pdf Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 5990 Stücke:
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50+0.35 EUR
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HS1DF-T HS1DF-T SERIES_B2103.pdf
HS1DF-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 7463 Stücke:
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39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
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HSMLW
HSMLW
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 1000V, HIGH EFFICIEN
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 20000 Stücke:
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10000+0.11 EUR
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HSMLW
HSMLW
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 1000V, HIGH EFFICIEN
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 20000 Stücke:
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Anzahl Preis
30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
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HSJLW
HSJLW
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 600V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 20000 Stücke:
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Anzahl Preis
10000+0.11 EUR
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HSJLW
HSJLW
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 600V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 20000 Stücke:
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Anzahl Preis
30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
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HS1JLWH
HS1JLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
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HSKLWH pdf.php?pn=HSKLWH
HSKLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 800V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
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Anzahl Preis
10000+0.11 EUR
Mindestbestellmenge: 10000
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HSKLWH pdf.php?pn=HSKLWH
HSKLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 800V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
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HSGLWH
HSGLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 0.8A, 400V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
Mindestbestellmenge: 10000
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HSGLWH
HSGLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 0.8A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
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HSDLWH HSDLWH SERIES_A2103.pdf
HSDLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 200V 800MA SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
5000+0.14 EUR
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HS1DLWH HS1DLWH SERIES_A2103.pdf
HS1DLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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HS1DLWH HS1DLWH SERIES_A2103.pdf
HS1DLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.13 EUR
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HSDLW HSDLW SERIES_C2103.pdf
HSDLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 200V 800MA SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
5000+0.14 EUR
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HSKLW
HSKLW
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 800V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 20000 Stücke:
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Anzahl Preis
10000+0.11 EUR
Mindestbestellmenge: 10000
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HSKLW
HSKLW
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 800V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
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HSMLWH
HSMLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 1000V, HIGH EFFICIEN
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
Mindestbestellmenge: 10000
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HSMLWH
HSMLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 0.8A, 1000V, HIGH EFFICIEN
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
42+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
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SMCJ15CAH SMCJH SERIES_A2102.pdf
SMCJ15CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 64A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ36CAH pdf.php?pn=SMDJ36CAH
SMDJ36CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ36CA M6G SMDJ%20SERIES_I2104.pdf
SMDJ36CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ36CAHM6G SMDJH%20SERIES_B2104.pdf
SMDJ36CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ36CA R7G SMDJ%20SERIES_I2104.pdf
SMDJ36CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ36CAHR7G SMDJH%20SERIES_B2104.pdf
SMDJ36CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S3MBH S3ABH SERIES_B2207.pdf
S3MBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 70 Stücke:
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Anzahl Preis
22+0.81 EUR
36+0.49 EUR
Mindestbestellmenge: 22
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HS3MBH HS3ABH SERIES_A2102.pdf
HS3MBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 2336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
29+0.61 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 18
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SA15AH SA SERIES_L2105.pdf
SA15AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SA15A A0G
SA15A A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 24.4V
Voltage - Breakdown (Min): 16.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 21A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SA15AHA0G SA%20SERIES_L2105.pdf
SA15AHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO204AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 24.4V
Voltage - Breakdown (Min): 16.7V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 21A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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SA15A B0G SA%20SERIES_L2105.pdf
SA15A B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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SA15AHB0G SA%20SERIES_L2105.pdf
SA15AHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C3V9S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C3V9S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD323F
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C3V9S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C3V9S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD323F
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
93+0.19 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
2000+0.067 EUR
5000+0.058 EUR
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BZT52C3V9 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V9 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52C3V9 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V9 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
95+0.19 EUR
152+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
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BZT52C3V9-G RHG BZT52C2V4%20-%20BZT52C75.pdf
BZT52C3V9-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.071 EUR
Mindestbestellmenge: 3000
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BZT52C3V9-G RHG BZT52C2V4%20-%20BZT52C75.pdf
BZT52C3V9-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 350MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
auf Bestellung 5955 Stücke:
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Anzahl Preis
50+0.35 EUR
82+0.21 EUR
133+0.13 EUR
500+0.097 EUR
1000+0.086 EUR
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BZT52C3V9K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C3V9K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD523F
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.068 EUR
6000+0.061 EUR
Mindestbestellmenge: 3000
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BZT52C3V9K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C3V9K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD523F
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
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Anzahl Preis
53+0.33 EUR
86+0.21 EUR
138+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
Mindestbestellmenge: 53
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BZT52C3V9-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C3V9-G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 350MW SOD123
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Produkt ist nicht verfügbar
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BZT52C3V9K BZT52C2V7K%20SERIES_G2402.pdf
BZT52C3V9K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD523F
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HER205G HER201G SERIES_G2105.pdf
HER205G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2574 Stücke:
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Anzahl Preis
24+0.74 EUR
39+0.45 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
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DBLS156G DBLS151G SERIES_M2103.pdf
DBLS156G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 1.5A DBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
auf Bestellung 2124 Stücke:
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Anzahl Preis
11+1.62 EUR
18+1 EUR
100+0.66 EUR
500+0.51 EUR
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DBLS158G DBLS151G SERIES_M2103.pdf
DBLS158G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1 EUR
100+0.66 EUR
500+0.51 EUR
Mindestbestellmenge: 11
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RB751M5-40 RSG RB751M5-40_A2005.pdf
RB751M5-40 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Produkt ist nicht verfügbar
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RB751M5-40 RSG RB751M5-40_A2005.pdf
RB751M5-40 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
auf Bestellung 7710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
115+0.15 EUR
186+0.095 EUR
500+0.069 EUR
1000+0.06 EUR
2000+0.053 EUR
Mindestbestellmenge: 67
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RB520SM5-40 RSG RB520SM5-40_A2004.pdf
RB520SM5-40 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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RB520SM5-40 RSG RB520SM5-40_A2004.pdf
RB520SM5-40 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 7837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
66+0.27 EUR
107+0.17 EUR
173+0.1 EUR
500+0.074 EUR
1000+0.065 EUR
2000+0.058 EUR
Mindestbestellmenge: 66
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TSD3G pdf.php?pn=TSD3G
TSD3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.35 EUR
Mindestbestellmenge: 850
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TSD3G pdf.php?pn=TSD3G
TSD3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.64 EUR
100+0.45 EUR
Mindestbestellmenge: 24
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TSD3GAL pdf.php?pn=TSD3GAL
TSD3GAL
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GAL pdf.php?pn=TSD3GAL
TSD3GAL
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSD3GALH pdf.php?pn=TSD3GALH
TSD3GALH
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSD3GALH pdf.php?pn=TSD3GALH
TSD3GALH
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSD3GFS pdf.php?pn=TSD3GFS
TSD3GFS
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GFS pdf.php?pn=TSD3GFS
TSD3GFS
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GFSH pdf.php?pn=TSD3GFSH
TSD3GFSH
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSD3GFSH pdf.php?pn=TSD3GFSH
TSD3GFSH
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B0540WF RHG B0520LWF SERIES_C14.pdf
B0540WF RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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B0540WF RHG B0520LWF SERIES_C14.pdf
B0540WF RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
50+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
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