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TSM085NB03CV RGG TSM085NB03CV RGG Taiwan Semiconductor Corporation TSM085NB03CV_A2010.pdf Description: 30V, 58A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.92W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1101 pF @ 15 V
auf Bestellung 10000 Stücke:
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14+1.27 EUR
21+0.85 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.39 EUR
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TSM085NB03DCR RLG TSM085NB03DCR RLG Taiwan Semiconductor Corporation TSM085NB03DCR_A2004.pdf Description: MOSFET 2N-CH 30V 12A/51A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
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TSM085NB03DCR RLG TSM085NB03DCR RLG Taiwan Semiconductor Corporation TSM085NB03DCR_A2004.pdf Description: MOSFET 2N-CH 30V 12A/51A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
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SK33B SK33B Taiwan Semiconductor Corporation SK32B SERIES_P2212.pdf Description: DIODE SCHOTTKY 30V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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1.5SMC170H 1.5SMC170H Taiwan Semiconductor Corporation pdf.php?pn=1.5SMC170H Description: 1500W, 170V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC170AH 1.5SMC170AH Taiwan Semiconductor Corporation pdf.php?pn=1.5SMC170AH Description: 1500W, 170V, 5%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC170 1.5SMC170 Taiwan Semiconductor Corporation pdf.php?pn=1.5SMC170 Description: 1500W, 170V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC170A 1.5SMC170A Taiwan Semiconductor Corporation pdf.php?pn=1.5SMC170A Description: 1500W, 170V, 5%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC170CH 1.5SMC170CH Taiwan Semiconductor Corporation pdf.php?pn=1.5SMC170CH Description: 1500W, 170V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC170CAH 1.5SMC170CAH Taiwan Semiconductor Corporation 1.5SMCH SERIES_B2207.pdf Description: 1500W, 170V, 5%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC170C 1.5SMC170C Taiwan Semiconductor Corporation pdf.php?pn=1.5SMC170C Description: 1500W, 170V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC170CA 1.5SMC170CA Taiwan Semiconductor Corporation 1.5SMC SERIES_S2207.pdf Description: 1500W, 170V, 5%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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RSFGL RSFGL Taiwan Semiconductor Corporation RSFAL SERIES_M2103.pdf Description: DIODE GP 400V 500MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RSFGL RSFGL Taiwan Semiconductor Corporation RSFAL SERIES_M2103.pdf Description: DIODE GP 400V 500MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1DL RS1DL Taiwan Semiconductor Corporation RS1AL SERIES_N2103.pdf Description: DIODE STD 200V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RSFDL RSFDL Taiwan Semiconductor Corporation pdf.php?pn=RSFDL Description: DIODE GP 200V 500MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RSFDL RSFDL Taiwan Semiconductor Corporation pdf.php?pn=RSFDL Description: DIODE GP 200V 500MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 19908 Stücke:
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RS1DFL RS1DFL Taiwan Semiconductor Corporation RS1AFL SERIES_B2103.pdf Description: DIODE STANDARD 200V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RS1DLW RS1DLW Taiwan Semiconductor Corporation RS1DLW SERIES_C2103.pdf Description: DIODE STANDARD 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RS1DFSH RS1DFSH Taiwan Semiconductor Corporation RS1DFSH SERIES_B2304.pdf Description: DIODE STANDARD 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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RS1DF-T RS1DF-T Taiwan Semiconductor Corporation RS1DF-T SERIES_B2103.pdf Description: DIODE STANDARD 200V 1A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RS1DH RS1DH Taiwan Semiconductor Corporation RS1AH SERIES_B2304.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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RS1DALH RS1DALH Taiwan Semiconductor Corporation RS1DALH SERIES_C2304.pdf Description: DIODE STANDARD 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 27517 Stücke:
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SF65GH SF65GH Taiwan Semiconductor Corporation SF61G SERIES_G2105.pdf Description: DIODE STANDARD 300V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 2450 Stücke:
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SF65G SF65G Taiwan Semiconductor Corporation SF61G SERIES_G2105.pdf Description: DIODE STANDARD 300V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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BZT52C5V6-G RHG BZT52C5V6-G RHG Taiwan Semiconductor Corporation BZT52C2V4-G SERIES_C2007.pdf Description: DIODE ZENER 5.6V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZT52C5V6-G RHG BZT52C5V6-G RHG Taiwan Semiconductor Corporation BZT52C2V4-G SERIES_C2007.pdf Description: DIODE ZENER 5.6V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZT52C5V6K RKG BZT52C5V6K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 5.6V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
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BZT52C5V6K RKG BZT52C5V6K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 5.6V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
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BZT52C5V6-G BZT52C5V6-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: DIODE ZENER 5.6V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZT52C5V6K BZT52C5V6K Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_G2402.pdf Description: DIODE ZENER 5.6V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Produkt ist nicht verfügbar
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3A100HB0G 3A100HB0G Taiwan Semiconductor Corporation 3A60%20SERIES_B2105.pdf Description: DIODE GEN PURP 3A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SF15G SF15G Taiwan Semiconductor Corporation SF11G SERIES_H2104.pdf Description: DIODE STANDARD 300V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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BZD17C11P BZD17C11P Taiwan Semiconductor Corporation pdf.php?pn=BZD17C11P Description: SUB SMA, 800MW, 6%, ZENER DIODE
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Produkt ist nicht verfügbar
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BZD17C11PH BZD17C11PH Taiwan Semiconductor Corporation BZD17CH SERIES_A2103.pdf Description: DIODE ZENER 11V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S15GLWHRVG S15GLWHRVG Taiwan Semiconductor Corporation S15DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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S15GLWHRVG S15GLWHRVG Taiwan Semiconductor Corporation S15DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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S15GLWH S15GLWH Taiwan Semiconductor Corporation S15DLWH SERIES_A2103.pdf Description: DIODE STANDARD 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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S15GLWH S15GLWH Taiwan Semiconductor Corporation S15DLWH SERIES_A2103.pdf Description: DIODE STANDARD 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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S15GLW S15GLW Taiwan Semiconductor Corporation S15DLW SERIES_C2103.pdf Description: DIODE STANDARD 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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S15GLW S15GLW Taiwan Semiconductor Corporation S15DLW SERIES_C2103.pdf Description: DIODE STANDARD 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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ES15GLW ES15GLW Taiwan Semiconductor Corporation pdf.php?pn=ES15GLW Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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ES15GLW ES15GLW Taiwan Semiconductor Corporation pdf.php?pn=ES15GLW Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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ES15GLWH ES15GLWH Taiwan Semiconductor Corporation pdf.php?pn=ES15GLWH Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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ES15GLWH ES15GLWH Taiwan Semiconductor Corporation pdf.php?pn=ES15GLWH Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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HS15GLWH HS15GLWH Taiwan Semiconductor Corporation Description: 50NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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HS15GLWH HS15GLWH Taiwan Semiconductor Corporation Description: 50NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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HS15GLW HS15GLW Taiwan Semiconductor Corporation Description: 50NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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HS15GLW HS15GLW Taiwan Semiconductor Corporation Description: 50NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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S15GC S15GC Taiwan Semiconductor Corporation S15GC SERIES_C2102.pdf Description: DIODE STANDARD 400V 15A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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S15GC S15GC Taiwan Semiconductor Corporation S15GC SERIES_C2102.pdf Description: DIODE STANDARD 400V 15A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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S15GCH S15GCH Taiwan Semiconductor Corporation pdf.php?pn=S15GCH Description: DIODE GEN PURP 400V 15A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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S15GCH S15GCH Taiwan Semiconductor Corporation pdf.php?pn=S15GCH Description: DIODE GEN PURP 400V 15A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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18+0.99 EUR
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500+0.49 EUR
1000+0.42 EUR
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SMCJ11A SMCJ11A Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf description Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMCJ11A SMCJ11A Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf description Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ11 SMCJ11 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 11VWM 20.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 78A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 20.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ11 SMCJ11 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 11VWM 20.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 78A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 20.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMB10J11A R5G SMB10J11A R5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.9A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
auf Bestellung 3313 Stücke:
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MBRS20100CT-Y MBRS20100CT-Y Taiwan Semiconductor Corporation MBRS2045CT-Y SERIES_E2201.pdf Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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MBRS20100CT MBRS20100CT Taiwan Semiconductor Corporation MBRS2035CT SERIES_N2103.pdf Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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TSM085NB03CV RGG TSM085NB03CV_A2010.pdf
TSM085NB03CV RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 58A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.92W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1101 pF @ 15 V
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14+1.27 EUR
21+0.85 EUR
100+0.59 EUR
500+0.46 EUR
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2000+0.39 EUR
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TSM085NB03DCR RLG TSM085NB03DCR_A2004.pdf
TSM085NB03DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 12A/51A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
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Anzahl Preis
2500+0.7 EUR
5000+0.67 EUR
Mindestbestellmenge: 2500
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TSM085NB03DCR RLG TSM085NB03DCR_A2004.pdf
TSM085NB03DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 12A/51A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
auf Bestellung 5000 Stücke:
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Anzahl Preis
11+1.69 EUR
13+1.39 EUR
100+1.08 EUR
500+0.91 EUR
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SK33B SK32B SERIES_P2212.pdf
SK33B
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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1.5SMC170H pdf.php?pn=1.5SMC170H
1.5SMC170H
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC170AH pdf.php?pn=1.5SMC170AH
1.5SMC170AH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 5%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC170 pdf.php?pn=1.5SMC170
1.5SMC170
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC170A pdf.php?pn=1.5SMC170A
1.5SMC170A
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 5%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC170CH pdf.php?pn=1.5SMC170CH
1.5SMC170CH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC170CAH 1.5SMCH SERIES_B2207.pdf
1.5SMC170CAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 5%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC170C pdf.php?pn=1.5SMC170C
1.5SMC170C
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC170CA 1.5SMC SERIES_S2207.pdf
1.5SMC170CA
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 5%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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RSFGL RSFAL SERIES_M2103.pdf
RSFGL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 500MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 10000 Stücke:
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10000+0.085 EUR
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RSFGL RSFAL SERIES_M2103.pdf
RSFGL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 500MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 14904 Stücke:
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24+0.74 EUR
35+0.52 EUR
100+0.26 EUR
500+0.21 EUR
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RS1DL RS1AL SERIES_N2103.pdf
RS1DL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 200V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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29+0.62 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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RSFDL pdf.php?pn=RSFDL
RSFDL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 500MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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10000+0.11 EUR
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RSFDL pdf.php?pn=RSFDL
RSFDL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 500MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 19908 Stücke:
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Anzahl Preis
25+0.72 EUR
35+0.5 EUR
100+0.25 EUR
500+0.21 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
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RS1DFL RS1AFL SERIES_B2103.pdf
RS1DFL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 9930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
78+0.23 EUR
125+0.14 EUR
500+0.1 EUR
1000+0.091 EUR
2000+0.081 EUR
5000+0.07 EUR
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RS1DLW RS1DLW SERIES_C2103.pdf
RS1DLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 12350 Stücke:
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Anzahl Preis
38+0.48 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.09 EUR
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RS1DFSH RS1DFSH SERIES_B2304.pdf
RS1DFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
60+0.3 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.093 EUR
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RS1DF-T RS1DF-T SERIES_B2103.pdf
RS1DF-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
64+0.28 EUR
103+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.099 EUR
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RS1DH RS1AH SERIES_B2304.pdf
RS1DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
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RS1DALH RS1DALH SERIES_C2304.pdf
RS1DALH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 27517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
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SF65GH SF61G SERIES_G2105.pdf
SF65GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
16+1.14 EUR
100+0.74 EUR
500+0.57 EUR
Mindestbestellmenge: 10
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SF65G SF61G SERIES_G2105.pdf
SF65G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 2404 Stücke:
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Anzahl Preis
10+1.81 EUR
16+1.14 EUR
100+0.74 EUR
500+0.57 EUR
Mindestbestellmenge: 10
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BZT52C5V6-G RHG BZT52C2V4-G SERIES_C2007.pdf
BZT52C5V6-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.073 EUR
Mindestbestellmenge: 3000
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BZT52C5V6-G RHG BZT52C2V4-G SERIES_C2007.pdf
BZT52C5V6-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 5888 Stücke:
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Anzahl Preis
48+0.37 EUR
80+0.22 EUR
129+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
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BZT52C5V6K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C5V6K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.076 EUR
6000+0.068 EUR
Mindestbestellmenge: 3000
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BZT52C5V6K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C5V6K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
77+0.23 EUR
124+0.14 EUR
500+0.1 EUR
1000+0.092 EUR
Mindestbestellmenge: 48
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BZT52C5V6-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C5V6-G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Produkt ist nicht verfügbar
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BZT52C5V6K BZT52C2V7K%20SERIES_G2402.pdf
BZT52C5V6K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Produkt ist nicht verfügbar
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3A100HB0G 3A60%20SERIES_B2105.pdf
3A100HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SF15G SF11G SERIES_H2104.pdf
SF15G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
40+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
2000+0.17 EUR
Mindestbestellmenge: 25
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BZD17C11P pdf.php?pn=BZD17C11P
BZD17C11P
Hersteller: Taiwan Semiconductor Corporation
Description: SUB SMA, 800MW, 6%, ZENER DIODE
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Produkt ist nicht verfügbar
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BZD17C11PH BZD17CH SERIES_A2103.pdf
BZD17C11PH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S15GLWHRVG S15DLW%20SERIES_C2103.pdf
S15GLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.2 EUR
Mindestbestellmenge: 3000
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S15GLWHRVG S15DLW%20SERIES_C2103.pdf
S15GLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 8730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
33+0.55 EUR
100+0.38 EUR
500+0.3 EUR
1000+0.24 EUR
Mindestbestellmenge: 28
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S15GLWH S15DLWH SERIES_A2103.pdf
S15GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.072 EUR
20000+0.066 EUR
Mindestbestellmenge: 10000
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S15GLWH S15DLWH SERIES_A2103.pdf
S15GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.099 EUR
Mindestbestellmenge: 34
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S15GLW S15DLW SERIES_C2103.pdf
S15GLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.087 EUR
20000+0.079 EUR
Mindestbestellmenge: 10000
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S15GLW S15DLW SERIES_C2103.pdf
S15GLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.096 EUR
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ES15GLW pdf.php?pn=ES15GLW
ES15GLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
Mindestbestellmenge: 10000
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ES15GLW pdf.php?pn=ES15GLW
ES15GLW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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32+0.56 EUR
40+0.44 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
2000+0.15 EUR
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ES15GLWH pdf.php?pn=ES15GLWH
ES15GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.13 EUR
Mindestbestellmenge: 10000
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ES15GLWH pdf.php?pn=ES15GLWH
ES15GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
40+0.44 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
2000+0.15 EUR
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HS15GLWH
HS15GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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Anzahl Preis
10000+0.14 EUR
Mindestbestellmenge: 10000
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HS15GLWH
HS15GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
35+0.51 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.15 EUR
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HS15GLW
HS15GLW
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20000 Stücke:
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Anzahl Preis
10000+0.14 EUR
Mindestbestellmenge: 10000
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HS15GLW
HS15GLW
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
35+0.51 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.15 EUR
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S15GC S15GC SERIES_C2102.pdf
S15GC
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 15A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 3000 Stücke:
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3000+0.41 EUR
Mindestbestellmenge: 3000
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S15GC S15GC SERIES_C2102.pdf
S15GC
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 15A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 3034 Stücke:
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Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
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S15GCH pdf.php?pn=S15GCH
S15GCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 15A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
Mindestbestellmenge: 3000
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S15GCH pdf.php?pn=S15GCH
S15GCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 15A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.84 EUR
100+0.58 EUR
500+0.49 EUR
1000+0.42 EUR
Mindestbestellmenge: 18
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SMCJ11A description SMCJ SERIES_S2104.pdf
SMCJ11A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMCJ11A description SMCJ SERIES_S2104.pdf
SMCJ11A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 1137 Stücke:
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Anzahl Preis
31+0.58 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.35 EUR
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SMCJ11 SMCJ SERIES_S2104.pdf
SMCJ11
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11VWM 20.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 78A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 20.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 3000 Stücke:
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3000+0.34 EUR
Mindestbestellmenge: 3000
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SMCJ11 SMCJ SERIES_S2104.pdf
SMCJ11
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11VWM 20.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 78A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 20.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 3000 Stücke:
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Anzahl Preis
13+1.43 EUR
20+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.4 EUR
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SMB10J11A R5G SMB10J%20SERIES_B2102.pdf
SMB10J11A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.9A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
auf Bestellung 3313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
11+1.74 EUR
100+1.17 EUR
Mindestbestellmenge: 7
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MBRS20100CT-Y MBRS2045CT-Y SERIES_E2201.pdf
MBRS20100CT-Y
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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MBRS20100CT MBRS2035CT SERIES_N2103.pdf
MBRS20100CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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