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DBLS158G DBLS158G Taiwan Semiconductor Corporation DBLS151G SERIES_M2103.pdf Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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RB751M5-40 RSG RB751M5-40 RSG Taiwan Semiconductor Corporation RB751M5-40_A2005.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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RB751M5-40 RSG RB751M5-40 RSG Taiwan Semiconductor Corporation RB751M5-40_A2005.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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RB520SM5-40 RSG RB520SM5-40 RSG Taiwan Semiconductor Corporation RB520SM5-40_A2004.pdf Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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RB520SM5-40 RSG RB520SM5-40 RSG Taiwan Semiconductor Corporation RB520SM5-40_A2004.pdf Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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TSD3G TSD3G Taiwan Semiconductor Corporation pdf.php?pn=TSD3G Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3G TSD3G Taiwan Semiconductor Corporation pdf.php?pn=TSD3G Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3GAL TSD3GAL Taiwan Semiconductor Corporation pdf.php?pn=TSD3GAL Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3GAL TSD3GAL Taiwan Semiconductor Corporation pdf.php?pn=TSD3GAL Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GALH TSD3GALH Taiwan Semiconductor Corporation pdf.php?pn=TSD3GALH Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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TSD3GALH TSD3GALH Taiwan Semiconductor Corporation pdf.php?pn=TSD3GALH Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSD3GFS TSD3GFS Taiwan Semiconductor Corporation pdf.php?pn=TSD3GFS Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3GFS TSD3GFS Taiwan Semiconductor Corporation pdf.php?pn=TSD3GFS Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GFSH TSD3GFSH Taiwan Semiconductor Corporation pdf.php?pn=TSD3GFSH Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSD3GFSH TSD3GFSH Taiwan Semiconductor Corporation pdf.php?pn=TSD3GFSH Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B0540WF RHG B0540WF RHG Taiwan Semiconductor Corporation B0520LWF SERIES_C14.pdf Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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B0540WF RHG B0540WF RHG Taiwan Semiconductor Corporation B0520LWF SERIES_C14.pdf Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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MMSZ5244B MMSZ5244B Taiwan Semiconductor Corporation MMSZ5221B%20series_H2007.pdf Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
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F1T4G A1G F1T4G A1G Taiwan Semiconductor Corporation F1T1G%20SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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F1T4GHA1G F1T4GHA1G Taiwan Semiconductor Corporation F1T1G%20SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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F1T4G A0G F1T4G A0G Taiwan Semiconductor Corporation F1T1G%20SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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F1T4GHA0G F1T4GHA0G Taiwan Semiconductor Corporation F1T1G%20SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54C RF BAT54C RF Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BAT54C RF BAT54C RF Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MBRF1050CTHC0G MBRF1050CTHC0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_M2105.pdf Description: DIODE ARR SCHOT 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
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MBRF1050HC0G MBRF1050HC0G Taiwan Semiconductor Corporation MBRF1035%20SERIES_M2105.pdf Description: DIODE SCHOTTKY 50V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSUP8M60SH TSUP8M60SH Taiwan Semiconductor Corporation Description: 8A, 60V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 547pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
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TSUP8M60SH TSUP8M60SH Taiwan Semiconductor Corporation Description: 8A, 60V, TRENCH SCHOTTKY
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 547pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
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PU4BBH PU4BBH Taiwan Semiconductor Corporation PU4BBH SERIES_B2109.pdf Description: DIODE STANDARD 100V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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PU4BBH PU4BBH Taiwan Semiconductor Corporation PU4BBH SERIES_B2109.pdf Description: DIODE STANDARD 100V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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SRAF1620 C0G SRAF1620 C0G Taiwan Semiconductor Corporation SRAF1620%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 20V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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SRF1620 C0G SRF1620 C0G Taiwan Semiconductor Corporation SRF1620%20SERIES_J2105.pdf Description: DIODE ARR SCHOT 20V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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TS431BCX RFG TS431BCX RFG Taiwan Semiconductor Corporation TS431_K2412.pdf Description: IC VREF SHUNT 36V 0.5% SOT23
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS431BCX RFG TS431BCX RFG Taiwan Semiconductor Corporation TS431_K2412.pdf Description: IC VREF SHUNT 36V 0.5% SOT23
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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UR3KB80 UR3KB80 Taiwan Semiconductor Corporation UR3KB60 SERIES_J2104.pdf Description: BRIDGE RECT 1PHASE 800V 3A D3K
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D3K
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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1V5KE43CA 1V5KE43CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 36.8VWM 59.3V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1V5KE43CA 1V5KE43CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 36.8VWM 59.3V DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SFF508GH SFF508GH Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 600V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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1.5KE16CH 1.5KE16CH Taiwan Semiconductor Corporation Description: TVS DIODE 12.9VWM 23.5VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 12.9V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1SMA200ZH 1SMA200ZH Taiwan Semiconductor Corporation Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Qualification: AEC-Q101
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HS1GLWH HS1GLWH Taiwan Semiconductor Corporation HS1DLWH SERIES_A2103.pdf Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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HS1GLWH HS1GLWH Taiwan Semiconductor Corporation HS1DLWH SERIES_A2103.pdf Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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TS35P05GH TS35P05GH Taiwan Semiconductor Corporation TS35P05G SERIES_F2203.pdf Description: BRIDGE RECT 1P 600V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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TS35P06GH TS35P06GH Taiwan Semiconductor Corporation TS35P05G SERIES_F2203.pdf Description: BRIDGE RECT 1P 800V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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TS25PL06GH TS25PL06GH Taiwan Semiconductor Corporation Description: 25A, 800V, STANDARD BRIDGE RECTI
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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ES1FH ES1FH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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ES1FH ES1FH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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ES1FLH ES1FLH Taiwan Semiconductor Corporation Description: 35NS, 1A, 300V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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ES1FL ES1FL Taiwan Semiconductor Corporation Description: 35NS, 1A, 300V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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TSH248CX Taiwan Semiconductor Corporation Description: MICROPOWER OMNI-POLAR HALL EFFEC
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Supplier Device Package: TSOT-23-3
Test Condition: 25°C
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TSM650P02CX TSM650P02CX Taiwan Semiconductor Corporation Description: -20V, -4.1A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 0.8V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
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TSM6502CR TSM6502CR Taiwan Semiconductor Corporation Description: MOSFET N/P-CH 60V 24A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
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TSM650N15CS TSM650N15CS Taiwan Semiconductor Corporation TSM650N15CSC1710.pdf Description: 150V, 9A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
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TSM650N15CR Taiwan Semiconductor Corporation Description: 150V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.6W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
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MBRAD1045DH MBRAD1045DH Taiwan Semiconductor Corporation MBRAD1045DH_A2303.pdf Description: DIODE ARR SCHOT 45V 10A THINDPAK
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ThinDPAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Qualification: AEC-Q101
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MBRAD1045DH MBRAD1045DH Taiwan Semiconductor Corporation MBRAD1045DH_A2303.pdf Description: DIODE ARR SCHOT 45V 10A THINDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ThinDPAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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BZD27C15P BZD27C15P Taiwan Semiconductor Corporation BZD27C SERIES_AB2103.pdf Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15PH BZD27C15PH Taiwan Semiconductor Corporation BZD27CH SERIES_A2103.pdf Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
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BZD27C150PH BZD27C150PH Taiwan Semiconductor Corporation BZD27CH SERIES_A2103.pdf Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 147 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
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BZD27C12P BZD27C12P Taiwan Semiconductor Corporation BZD27C SERIES_AB2103.pdf Description: DIODE ZENER 12.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
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DBLS158G DBLS151G SERIES_M2103.pdf
DBLS158G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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RB751M5-40 RSG RB751M5-40_A2005.pdf
RB751M5-40 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Produkt ist nicht verfügbar
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RB751M5-40 RSG RB751M5-40_A2005.pdf
RB751M5-40 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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RB520SM5-40 RSG RB520SM5-40_A2004.pdf
RB520SM5-40 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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RB520SM5-40 RSG RB520SM5-40_A2004.pdf
RB520SM5-40 RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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TSD3G pdf.php?pn=TSD3G
TSD3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3G pdf.php?pn=TSD3G
TSD3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3GAL pdf.php?pn=TSD3GAL
TSD3GAL
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSD3GAL pdf.php?pn=TSD3GAL
TSD3GAL
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GALH pdf.php?pn=TSD3GALH
TSD3GALH
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSD3GALH pdf.php?pn=TSD3GALH
TSD3GALH
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSD3GFS pdf.php?pn=TSD3GFS
TSD3GFS
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GFS pdf.php?pn=TSD3GFS
TSD3GFS
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSD3GFSH pdf.php?pn=TSD3GFSH
TSD3GFSH
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSD3GFSH pdf.php?pn=TSD3GFSH
TSD3GFSH
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B0540WF RHG B0520LWF SERIES_C14.pdf
B0540WF RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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B0540WF RHG B0520LWF SERIES_C14.pdf
B0540WF RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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MMSZ5244B MMSZ5221B%20series_H2007.pdf
MMSZ5244B
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
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F1T4G A1G F1T1G%20SERIES_H2104.pdf
F1T4G A1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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F1T4GHA1G F1T1G%20SERIES_H2104.pdf
F1T4GHA1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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F1T4G A0G F1T1G%20SERIES_H2104.pdf
F1T4G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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F1T4GHA0G F1T1G%20SERIES_H2104.pdf
F1T4GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54C RF BAT54 SERIES_G2007.pdf
BAT54C RF
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAT54C RF BAT54 SERIES_G2007.pdf
BAT54C RF
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MBRF1050CTHC0G MBRF1035CT%20SERIES_M2105.pdf
MBRF1050CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
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MBRF1050HC0G MBRF1035%20SERIES_M2105.pdf
MBRF1050HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
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TSUP8M60SH
TSUP8M60SH
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 60V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 547pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
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TSUP8M60SH
TSUP8M60SH
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 60V, TRENCH SCHOTTKY
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 547pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
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PU4BBH PU4BBH SERIES_B2109.pdf
PU4BBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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PU4BBH PU4BBH SERIES_B2109.pdf
PU4BBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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SRAF1620 C0G SRAF1620%20SERIES_J2105.pdf
SRAF1620 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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SRF1620 C0G SRF1620%20SERIES_J2105.pdf
SRF1620 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 20V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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TS431BCX RFG TS431_K2412.pdf
TS431BCX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 0.5% SOT23
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS431BCX RFG TS431_K2412.pdf
TS431BCX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 0.5% SOT23
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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UR3KB80 UR3KB60 SERIES_J2104.pdf
UR3KB80
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 3A D3K
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D3K
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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1V5KE43CA 1V5KE SERIES_D2112.pdf
1V5KE43CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1V5KE43CA 1V5KE SERIES_D2112.pdf
1V5KE43CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3V DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SFF508GH
SFF508GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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1.5KE16CH
1.5KE16CH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.9VWM 23.5VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 12.9V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1SMA200ZH
1SMA200ZH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HS1GLWH HS1DLWH SERIES_A2103.pdf
HS1GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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HS1GLWH HS1DLWH SERIES_A2103.pdf
HS1GLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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TS35P05GH TS35P05G SERIES_F2203.pdf
TS35P05GH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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TS35P06GH TS35P05G SERIES_F2203.pdf
TS35P06GH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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TS25PL06GH
TS25PL06GH
Hersteller: Taiwan Semiconductor Corporation
Description: 25A, 800V, STANDARD BRIDGE RECTI
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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ES1FH
ES1FH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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ES1FH
ES1FH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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ES1FLH
ES1FLH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 300V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES1FL
ES1FL
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 300V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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TSH248CX
Hersteller: Taiwan Semiconductor Corporation
Description: MICROPOWER OMNI-POLAR HALL EFFEC
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Supplier Device Package: TSOT-23-3
Test Condition: 25°C
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TSM650P02CX
TSM650P02CX
Hersteller: Taiwan Semiconductor Corporation
Description: -20V, -4.1A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 0.8V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
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TSM6502CR
TSM6502CR
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Produkt ist nicht verfügbar
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TSM650N15CS TSM650N15CSC1710.pdf
TSM650N15CS
Hersteller: Taiwan Semiconductor Corporation
Description: 150V, 9A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
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TSM650N15CR
Hersteller: Taiwan Semiconductor Corporation
Description: 150V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.6W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Produkt ist nicht verfügbar
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MBRAD1045DH MBRAD1045DH_A2303.pdf
MBRAD1045DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 45V 10A THINDPAK
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ThinDPAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Qualification: AEC-Q101
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MBRAD1045DH MBRAD1045DH_A2303.pdf
MBRAD1045DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 45V 10A THINDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ThinDPAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4496 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.36 EUR
19+1.14 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.58 EUR
2000+0.54 EUR
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BZD27C15P BZD27C SERIES_AB2103.pdf
BZD27C15P
Hersteller: Taiwan Semiconductor Corporation
Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
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BZD27C15PH BZD27CH SERIES_A2103.pdf
BZD27C15PH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
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BZD27C150PH BZD27CH SERIES_A2103.pdf
BZD27C150PH
Hersteller: Taiwan Semiconductor Corporation
Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 147 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
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BZD27C12P BZD27C SERIES_AB2103.pdf
BZD27C12P
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12.05V 1W SUB SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.2 EUR
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