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S5M S5M Taiwan Semiconductor Corporation s5a.pdf Description: DIODE GEN PURP 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S5M S5M Taiwan Semiconductor Corporation s5a.pdf Description: DIODE GEN PURP 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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HS5MH HS5MH Taiwan Semiconductor Corporation HS5AH SERIES_A2102.pdf Description: DIODE STANDARD 1000V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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HS5MH HS5MH Taiwan Semiconductor Corporation HS5AH SERIES_A2102.pdf Description: DIODE STANDARD 1000V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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MMBD3004CA Taiwan Semiconductor Corporation MMBD3004%20SERIES_C2001.pdf Description: DIODE ARRAY GP 350V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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MMBD3004CA Taiwan Semiconductor Corporation MMBD3004%20SERIES_C2001.pdf Description: DIODE ARRAY GP 350V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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MMBD3004CA RFG MMBD3004CA RFG Taiwan Semiconductor Corporation MMBD3004 SERIES_C2001.pdf Description: DIODE ARRAY GP 350V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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MMBD3004CA RFG MMBD3004CA RFG Taiwan Semiconductor Corporation MMBD3004 SERIES_C2001.pdf Description: DIODE ARRAY GP 350V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MMBD3004CC RFG MMBD3004CC RFG Taiwan Semiconductor Corporation pdf.php?pn=MMBD3004CC Description: DIODE ARRAY GP 350V 225MA SOT23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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MMBD3004CC RFG MMBD3004CC RFG Taiwan Semiconductor Corporation pdf.php?pn=MMBD3004CC Description: DIODE ARRAY GP 350V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MMBD3004 RFG MMBD3004 RFG Taiwan Semiconductor Corporation pdf.php?pn=MMBD3004 Description: DIODE GEN PURP 350V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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MMBD3004 RFG MMBD3004 RFG Taiwan Semiconductor Corporation pdf.php?pn=MMBD3004 Description: DIODE GEN PURP 350V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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MMBD3004 MMBD3004 Taiwan Semiconductor Corporation MMBD3004%20SERIES_C2001.pdf Description: SOT-23, 350V, 0.225A, SWITCHING
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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MMBD3004CC MMBD3004CC Taiwan Semiconductor Corporation MMBD3004%20SERIES_C2001.pdf Description: SOT-23, 350V, 0.225A, SWITCHING
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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MMSZ5221B RHG MMSZ5221B RHG Taiwan Semiconductor Corporation pdf.php?pn=MMSZ5221B Description: DIODE ZENER 2.4V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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MMSZ5221B RHG MMSZ5221B RHG Taiwan Semiconductor Corporation pdf.php?pn=MMSZ5221B Description: DIODE ZENER 2.4V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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BZX79C8V2 A0G BZX79C8V2 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_F1804.pdf Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
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S2KFL S2KFL Taiwan Semiconductor Corporation S2DFL SERIES_B2103.pdf Description: DIODE STANDARD 800V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S2KFL S2KFL Taiwan Semiconductor Corporation S2DFL SERIES_B2103.pdf Description: DIODE STANDARD 800V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S2KFS S2KFS Taiwan Semiconductor Corporation pdf.php?pn=S2KFS Description: 2A, 800V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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S2KFS S2KFS Taiwan Semiconductor Corporation pdf.php?pn=S2KFS Description: 2A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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S2KFSH S2KFSH Taiwan Semiconductor Corporation pdf.php?pn=S2KFSH Description: 2A, 800V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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S2KFSH S2KFSH Taiwan Semiconductor Corporation pdf.php?pn=S2KFSH Description: 2A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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2A06G 2A06G Taiwan Semiconductor Corporation 2A01G SERIES_I2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2A06G 2A06G Taiwan Semiconductor Corporation 2A01G SERIES_I2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HS2KH HS2KH Taiwan Semiconductor Corporation pdf.php?pn=HS2KH Description: 75NS, 2A, 800V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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HS2KH HS2KH Taiwan Semiconductor Corporation pdf.php?pn=HS2KH Description: 75NS, 2A, 800V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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SRF2040H SRF2040H Taiwan Semiconductor Corporation pdf.php?pn=SRF2040 Description: DIODE ARR SCHOT 40V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM900N10CH Taiwan Semiconductor Corporation Description: 100V, 15A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251S (IPAK SL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
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PGSMAJ36AHF4G PGSMAJ36AHF4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2A05G 2A05G Taiwan Semiconductor Corporation 2A01G SERIES_I2105.pdf Description: DIODE STANDARD 600V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SMCJ36 SMCJ36 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 36VWM 64.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ36 SMCJ36 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 36VWM 64.3VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZX79C30 BZX79C30 Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_H2304.pdf Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
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BZX79C30 A0G BZX79C30 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_F1804.pdf Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Produkt ist nicht verfügbar
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P4SMA22C P4SMA22C Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 17.8VWM 31.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 17.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.8V
Voltage - Clamping (Max) @ Ipp: 31.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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SR4030PT C0G SR4030PT C0G Taiwan Semiconductor Corporation SR4020PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 30V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Produkt ist nicht verfügbar
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SR4030PTHC0G SR4030PTHC0G Taiwan Semiconductor Corporation SR4020PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 30V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24LHRHG SS24LHRHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24L M2G SS24L M2G Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24LHM2G SS24LHM2G Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Qualification: AEC-Q101
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SS24LHMHG SS24LHMHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24L MQG SS24L MQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar
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SS24L RTG SS24L RTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24LHMQG SS24LHMQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24LHMTG SS24LHMTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24LHRTG SS24LHRTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24L RFG SS24L RFG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
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SS24LHRFG SS24LHRFG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24L RUG SS24L RUG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
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KBPF304G KBPF304G Taiwan Semiconductor Corporation KBPF304G SERIES_B2103.pdf Description: BRIDGE RECT 1PHASE 400V 3A KBPF
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPF
Packaging: Tube
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BAT54T RFG BAT54T RFG Taiwan Semiconductor Corporation BAT54T SERIES_H2111.pdf Description: DIODE SCHOTTKY 30V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54T RFG BAT54T RFG Taiwan Semiconductor Corporation BAT54T SERIES_H2111.pdf Description: DIODE SCHOTTKY 30V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54T RF BAT54T RF Taiwan Semiconductor Corporation BAT54T SERIES_H2111.pdf Description: DIODE SCHOTTKY 30V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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BAT54T RF BAT54T RF Taiwan Semiconductor Corporation BAT54T SERIES_H2111.pdf Description: DIODE SCHOTTKY 30V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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BAT54T-G BAT54T-G Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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BAT54T BAT54T Taiwan Semiconductor Corporation BAT54T%20SERIES_H2111.pdf Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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MMSZ5226B RHG MMSZ5226B RHG Taiwan Semiconductor Corporation MMSZ5221B series_H2007.pdf Description: DIODE ZENER 3.3V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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MMSZ5226B RHG MMSZ5226B RHG Taiwan Semiconductor Corporation MMSZ5221B series_H2007.pdf Description: DIODE ZENER 3.3V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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TSG65N190CR RVG TSG65N190CR RVG Taiwan Semiconductor Corporation TSG65N190CR_B2305.pdf Description: 650V, 11A, PDFN56, E-MODE GAN TR
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S5M s5a.pdf
S5M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S5M s5a.pdf
S5M
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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HS5MH HS5AH SERIES_A2102.pdf
HS5MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HS5MH HS5AH SERIES_A2102.pdf
HS5MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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MMBD3004CA MMBD3004%20SERIES_C2001.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 350V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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MMBD3004CA MMBD3004%20SERIES_C2001.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 350V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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MMBD3004CA RFG MMBD3004 SERIES_C2001.pdf
MMBD3004CA RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 350V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.099 EUR
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MMBD3004CA RFG MMBD3004 SERIES_C2001.pdf
MMBD3004CA RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 350V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MMBD3004CC RFG pdf.php?pn=MMBD3004CC
MMBD3004CC RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 350V 225MA SOT23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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MMBD3004CC RFG pdf.php?pn=MMBD3004CC
MMBD3004CC RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 350V 225MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBD3004 RFG pdf.php?pn=MMBD3004
MMBD3004 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 350V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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MMBD3004 RFG pdf.php?pn=MMBD3004
MMBD3004 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 350V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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MMBD3004 MMBD3004%20SERIES_C2001.pdf
MMBD3004
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-23, 350V, 0.225A, SWITCHING
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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MMBD3004CC MMBD3004%20SERIES_C2001.pdf
MMBD3004CC
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-23, 350V, 0.225A, SWITCHING
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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MMSZ5221B RHG pdf.php?pn=MMSZ5221B
MMSZ5221B RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
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MMSZ5221B RHG pdf.php?pn=MMSZ5221B
MMSZ5221B RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
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BZX79C8V2 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C8V2 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
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S2KFL S2DFL SERIES_B2103.pdf
S2KFL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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S2KFL S2DFL SERIES_B2103.pdf
S2KFL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 9984 Stücke:
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68+0.31 EUR
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S2KFS pdf.php?pn=S2KFS
S2KFS
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 800V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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14000+0.1 EUR
28000+0.098 EUR
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S2KFS pdf.php?pn=S2KFS
S2KFS
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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32+0.67 EUR
45+0.46 EUR
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S2KFSH pdf.php?pn=S2KFSH
S2KFSH
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 800V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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14000+0.1 EUR
28000+0.1 EUR
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S2KFSH pdf.php?pn=S2KFSH
S2KFSH
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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31+0.69 EUR
44+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.14 EUR
2000+0.12 EUR
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2A06G 2A01G SERIES_I2105.pdf
2A06G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2A06G 2A01G SERIES_I2105.pdf
2A06G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HS2KH pdf.php?pn=HS2KH
HS2KH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 800V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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6000+0.18 EUR
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HS2KH pdf.php?pn=HS2KH
HS2KH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 800V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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25+0.83 EUR
35+0.6 EUR
100+0.3 EUR
500+0.26 EUR
1000+0.21 EUR
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SRF2040H pdf.php?pn=SRF2040
SRF2040H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 40V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM900N10CH
Hersteller: Taiwan Semiconductor Corporation
Description: 100V, 15A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251S (IPAK SL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Produkt ist nicht verfügbar
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PGSMAJ36AHF4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ36AHF4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2A05G 2A01G SERIES_I2105.pdf
2A05G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 4825 Stücke:
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63+0.33 EUR
101+0.21 EUR
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SMCJ36 SMCJ SERIES_S2104.pdf
SMCJ36
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 64.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMCJ36 SMCJ SERIES_S2104.pdf
SMCJ36
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 64.3VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 2932 Stücke:
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12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
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BZX79C30 BZX79C2V0%20SERIES_H2304.pdf
BZX79C30
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Produkt ist nicht verfügbar
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BZX79C30 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C30 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Produkt ist nicht verfügbar
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P4SMA22C P4SMA SERIES_S2102.pdf
P4SMA22C
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.8VWM 31.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 17.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.8V
Voltage - Clamping (Max) @ Ipp: 31.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SR4030PT C0G SR4020PT%20SERIES_H2103.pdf
SR4030PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 30V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Produkt ist nicht verfügbar
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SR4030PTHC0G SR4020PT%20SERIES_H2103.pdf
SR4030PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 30V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24LHRHG SS22L-SS215L_O2103.pdf
SS24LHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24L M2G SS22L-SS215L_O2103.pdf
SS24L M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24LHM2G SS22L-SS215L_O2103.pdf
SS24LHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Qualification: AEC-Q101
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SS24LHMHG SS22L-SS215L_O2103.pdf
SS24LHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24L MQG SS22L-SS215L_O2103.pdf
SS24L MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar
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SS24L RTG SS22L-SS215L_O2103.pdf
SS24L RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24LHMQG SS22L-SS215L_O2103.pdf
SS24LHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24LHMTG SS22L-SS215L_O2103.pdf
SS24LHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS24LHRTG SS22L-SS215L_O2103.pdf
SS24LHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24L RFG SS22L-SS215L_O2103.pdf
SS24L RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
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SS24LHRFG SS22L-SS215L_O2103.pdf
SS24LHRFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS24L RUG SS22L-SS215L_O2103.pdf
SS24L RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
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KBPF304G KBPF304G SERIES_B2103.pdf
KBPF304G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 3A KBPF
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPF
Packaging: Tube
auf Bestellung 2096 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
20+1.08 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
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BAT54T RFG BAT54T SERIES_H2111.pdf
BAT54T RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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BAT54T RFG BAT54T SERIES_H2111.pdf
BAT54T RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
41+0.51 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
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BAT54T RF BAT54T SERIES_H2111.pdf
BAT54T RF
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BAT54T RF BAT54T SERIES_H2111.pdf
BAT54T RF
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT54T-G
BAT54T-G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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BAT54T BAT54T%20SERIES_H2111.pdf
BAT54T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MMSZ5226B RHG MMSZ5221B series_H2007.pdf
MMSZ5226B RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.084 EUR
Mindestbestellmenge: 3000 Stücke
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MMSZ5226B RHG MMSZ5221B series_H2007.pdf
MMSZ5226B RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
auf Bestellung 4398 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
82+0.26 EUR
132+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
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TSG65N190CR RVG TSG65N190CR_B2305.pdf
TSG65N190CR RVG
Hersteller: Taiwan Semiconductor Corporation
Description: 650V, 11A, PDFN56, E-MODE GAN TR
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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