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TSM8588CV Taiwan Semiconductor Corporation Description: -60V, -4.5A, COMPLEMENTARY P-CHA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TSM8588CV Taiwan Semiconductor Corporation Description: -60V, -4.5A, COMPLEMENTARY P-CHA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
BZD27C43PH BZD27C43PH Taiwan Semiconductor Corporation pdf.php?pn=BZD27C43PH Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Produkt ist nicht verfügbar
SMBJ51CAH SMBJ51CAH Taiwan Semiconductor Corporation pdf.php?pn=SMBJ51CAH Description: TVS DIODE 51VWM 82.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1V5KE12A 1V5KE12A Taiwan Semiconductor Corporation Description: TVS DIODE 10.2VWM 16.7VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1V5KE12A 1V5KE12A Taiwan Semiconductor Corporation Description: TVS DIODE 10.2VWM 16.7VC DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1N5397GH 1N5397GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 6900 Stücke:
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100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
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1N5397G 1N5397G Taiwan Semiconductor Corporation 1N5391G SERIES_G2309.pdf Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 6980 Stücke:
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1N5395G 1N5395G Taiwan Semiconductor Corporation 1N5391G SERIES_G2309.pdf Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 6990 Stücke:
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100+ 0.19 EUR
500+ 0.16 EUR
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1N5395GH 1N5395GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 6970 Stücke:
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500+ 0.16 EUR
1000+ 0.12 EUR
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1N5398G 1N5398G Taiwan Semiconductor Corporation 1N5391G SERIES_G2309.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 6995 Stücke:
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1N5398GH 1N5398GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
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TSM250N02CX Taiwan Semiconductor Corporation TSM250N02CX_B1811.pdf Description: 20V, 5.8A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 0.8V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
Produkt ist nicht verfügbar
TSM250N02DCQ Taiwan Semiconductor Corporation TSM250N02DCQ_C2212.pdf Description: MOSFET 2N-CH 20V 5.8A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 0.8V @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Produkt ist nicht verfügbar
ZM4735A L0G ZM4735A L0G Taiwan Semiconductor Corporation pdf.php?pn=ZM4735A Description: DIODE ZENER 6.2V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Produkt ist nicht verfügbar
BZX55B3V6 Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_G2301.pdf Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
BZX55B3V6 A0G BZX55B3V6 A0G Taiwan Semiconductor Corporation pdf.php?pn=BZX55B3V6 Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
MUR440 MUR440 Taiwan Semiconductor Corporation pdf.php?pn=MUR440 Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
MUR440 MUR440 Taiwan Semiconductor Corporation pdf.php?pn=MUR440 Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
SF16GH SF16GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF16GH SF16GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 4900 Stücke:
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39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
SF16G SF16G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 5000 Stücke:
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5000+0.14 EUR
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SF16G SF16G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
SF16G R1G SF16G R1G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
SF16GHR1G SF16GHR1G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF16G A0G SF16G A0G Taiwan Semiconductor Corporation pdf.php?pn=SF16G Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
SF16GHA0G SF16GHA0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF16G B0G SF16G B0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
SF16GHB0G SF16GHB0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ45H SMAJ45H Taiwan Semiconductor Corporation pdf.php?pn=SMAJ45H Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ45CH SMAJ45CH Taiwan Semiconductor Corporation pdf.php?pn=SMAJ45CH Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ45C SMAJ45C Taiwan Semiconductor Corporation pdf.php?pn=SMAJ45C Description: 400W, 55.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
1SS355 R9G 1SS355 R9G Taiwan Semiconductor Corporation Description: SOD-323F, 90V, 0.25A, SWITCHING
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Produkt ist nicht verfügbar
1SS355 R9G 1SS355 R9G Taiwan Semiconductor Corporation Description: SOD-323F, 90V, 0.25A, SWITCHING
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 9980 Stücke:
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56+0.32 EUR
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159+ 0.11 EUR
500+ 0.093 EUR
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2000+ 0.056 EUR
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Mindestbestellmenge: 56
SFAF804GH Taiwan Semiconductor Corporation Description: 35NS, 8A, 200V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF506G SFAF506G Taiwan Semiconductor Corporation pdf.php?pn=SFAF506G Description: DIODE GEN PURP 400V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
SFAF506GH Taiwan Semiconductor Corporation Description: 35NS, 5A, 400V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF508GH SFAF508GH Taiwan Semiconductor Corporation SFAF501G%20SERIES_I2105.pdf Description: 35NS, 5A, 600V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
50+ 1.24 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 12
SFAF806GH Taiwan Semiconductor Corporation Description: 35NS, 8A, 400V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF808GH Taiwan Semiconductor Corporation Description: 35NS, 8A, 600V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF1006GH SFAF1006GH Taiwan Semiconductor Corporation pdf.php?pn=SFAF1006G Description: DIODE GEN PURP 400V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF1006G SFAF1006G Taiwan Semiconductor Corporation pdf.php?pn=SFAF1006G Description: DIODE GEN PURP 400V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
SFAF1008GH Taiwan Semiconductor Corporation Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF1604G SFAF1604G Taiwan Semiconductor Corporation pdf.php?pn=SFAF1604G Description: DIODE GEN PURP 200V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
SFAF1608G SFAF1608G Taiwan Semiconductor Corporation pdf.php?pn=SFAF1608G Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
SFAF1608GH SFAF1608GH Taiwan Semiconductor Corporation pdf.php?pn=SFAF1608G Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF2008GH SFAF2008GH Taiwan Semiconductor Corporation pdf.php?pn=SFAF2008GH Description: DIODE GEN PURP 600V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF2008G SFAF2008G Taiwan Semiconductor Corporation pdf.php?pn=SFAF2008G Description: DIODE GEN PURP 600V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
SFAF2004GH SFAF2004GH Taiwan Semiconductor Corporation Description: 35NS, 20A, 200V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF2006G SFAF2006G Taiwan Semiconductor Corporation pdf.php?pn=SFAF2006G Description: DIODE GEN PURP 400V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
SFAF2006GH Taiwan Semiconductor Corporation Description: 35NS, 20A, 400V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS26FSH SS26FSH Taiwan Semiconductor Corporation SS24FSH SERIES_B2103.pdf Description: 2A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS26ALH SS26ALH Taiwan Semiconductor Corporation SS24ALH SERIES_B2103.pdf Description: 2A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS26L SS26L Taiwan Semiconductor Corporation SS22L SERIES_O2103.pdf Description: 2A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Produkt ist nicht verfügbar
SS26LH SS26LH Taiwan Semiconductor Corporation SS22LH SERIES_A2103.pdf Description: 2A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TSP15H120S TSP15H120S Taiwan Semiconductor Corporation Description: 15A, 120V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
1.5KE220 1.5KE220 Taiwan Semiconductor Corporation pdf.php?pn=1.5KE220 Description: 1500W, 220V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 175V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 198V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE220CH 1.5KE220CH Taiwan Semiconductor Corporation pdf.php?pn=1.5KE220C Description: 1500W, 220V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 175V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 198V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE220C 1.5KE220C Taiwan Semiconductor Corporation pdf.php?pn=1.5KE220C Description: 1500W, 220V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 175V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 198V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TSZU52C2V2 RGG TSZU52C2V2 RGG Taiwan Semiconductor Corporation pdf.php?pn=TSZU52C2V2 Description: DIODE ZENER 2.2V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
8000+ 0.12 EUR
12000+ 0.11 EUR
Mindestbestellmenge: 4000
TSM8588CV
Hersteller: Taiwan Semiconductor Corporation
Description: -60V, -4.5A, COMPLEMENTARY P-CHA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TSM8588CV
Hersteller: Taiwan Semiconductor Corporation
Description: -60V, -4.5A, COMPLEMENTARY P-CHA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
BZD27C43PH pdf.php?pn=BZD27C43PH
BZD27C43PH
Hersteller: Taiwan Semiconductor Corporation
Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Produkt ist nicht verfügbar
SMBJ51CAH pdf.php?pn=SMBJ51CAH
SMBJ51CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1V5KE12A
1V5KE12A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1V5KE12A
1V5KE12A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1N5397GH
1N5397GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 6900 Stücke:
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Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
1N5397G 1N5391G SERIES_G2309.pdf
1N5397G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 6980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
1N5395G 1N5391G SERIES_G2309.pdf
1N5395G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
1N5395GH
1N5395GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 6970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
1N5398G 1N5391G SERIES_G2309.pdf
1N5398G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 6995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 30
1N5398GH
1N5398GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 30
TSM250N02CX TSM250N02CX_B1811.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 20V, 5.8A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 0.8V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
Produkt ist nicht verfügbar
TSM250N02DCQ TSM250N02DCQ_C2212.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 20V 5.8A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 0.8V @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Produkt ist nicht verfügbar
ZM4735A L0G pdf.php?pn=ZM4735A
ZM4735A L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Produkt ist nicht verfügbar
BZX55B3V6 BZX55B2V4%20SERIES_G2301.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
BZX55B3V6 A0G pdf.php?pn=BZX55B3V6
BZX55B3V6 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
MUR440 pdf.php?pn=MUR440
MUR440
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
MUR440 pdf.php?pn=MUR440
MUR440
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
SF16GH
SF16GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF16GH
SF16GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
SF16G
SF16G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.14 EUR
Mindestbestellmenge: 5000
SF16G
SF16G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
SF16G R1G SF11G%20SERIES_H2104.pdf
SF16G R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
SF16GHR1G SF11G%20SERIES_H2104.pdf
SF16GHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF16G A0G pdf.php?pn=SF16G
SF16G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
SF16GHA0G SF11G%20SERIES_H2104.pdf
SF16GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF16G B0G SF11G%20SERIES_H2104.pdf
SF16G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
SF16GHB0G SF11G%20SERIES_H2104.pdf
SF16GHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ45H pdf.php?pn=SMAJ45H
SMAJ45H
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ45CH pdf.php?pn=SMAJ45CH
SMAJ45CH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 80.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ45C pdf.php?pn=SMAJ45C
SMAJ45C
Hersteller: Taiwan Semiconductor Corporation
Description: 400W, 55.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 80.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
1SS355 R9G
1SS355 R9G
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 90V, 0.25A, SWITCHING
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Produkt ist nicht verfügbar
1SS355 R9G
1SS355 R9G
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 90V, 0.25A, SWITCHING
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
78+ 0.23 EUR
159+ 0.11 EUR
500+ 0.093 EUR
1000+ 0.064 EUR
2000+ 0.056 EUR
5000+ 0.052 EUR
Mindestbestellmenge: 56
SFAF804GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 8A, 200V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF506G pdf.php?pn=SFAF506G
SFAF506G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
SFAF506GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 5A, 400V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF508GH SFAF501G%20SERIES_I2105.pdf
SFAF508GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 5A, 600V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.5 EUR
50+ 1.24 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 12
SFAF806GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 8A, 400V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF808GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 8A, 600V, SUPER FAST RECOV
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF1006GH pdf.php?pn=SFAF1006G
SFAF1006GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF1006G pdf.php?pn=SFAF1006G
SFAF1006G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
SFAF1008GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 10A, 600V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF1604G pdf.php?pn=SFAF1604G
SFAF1604G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
SFAF1608G pdf.php?pn=SFAF1608G
SFAF1608G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
SFAF1608GH pdf.php?pn=SFAF1608G
SFAF1608GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF2008GH pdf.php?pn=SFAF2008GH
SFAF2008GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF2008G pdf.php?pn=SFAF2008G
SFAF2008G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
SFAF2004GH
SFAF2004GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 20A, 200V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFAF2006G pdf.php?pn=SFAF2006G
SFAF2006G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
SFAF2006GH
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 20A, 400V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS26FSH SS24FSH SERIES_B2103.pdf
SS26FSH
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS26ALH SS24ALH SERIES_B2103.pdf
SS26ALH
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS26L SS22L SERIES_O2103.pdf
SS26L
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Produkt ist nicht verfügbar
SS26LH SS22LH SERIES_A2103.pdf
SS26LH
Hersteller: Taiwan Semiconductor Corporation
Description: 2A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TSP15H120S
TSP15H120S
Hersteller: Taiwan Semiconductor Corporation
Description: 15A, 120V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
1.5KE220 pdf.php?pn=1.5KE220
1.5KE220
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 220V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 175V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 198V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE220CH pdf.php?pn=1.5KE220C
1.5KE220CH
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 220V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 175V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 198V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5KE220C pdf.php?pn=1.5KE220C
1.5KE220C
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 220V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 175V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 198V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TSZU52C2V2 RGG pdf.php?pn=TSZU52C2V2
TSZU52C2V2 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.2V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.13 EUR
8000+ 0.12 EUR
12000+ 0.11 EUR
Mindestbestellmenge: 4000
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