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DBLS151GH DBLS151GH Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Qualification: AEC-Q101
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DBLS153GH DBLS153GH Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DBLS151G DBLS151G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar
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DBLS152G DBLS152G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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DBLS153G DBLS153G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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DBLS152GH DBLS152GH Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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SR2040PTH SR2040PTH Taiwan Semiconductor Corporation SR2020PT SERIES_J2103.pdf Description: DIODE ARR SCHOTT 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SR2040PT SR2040PT Taiwan Semiconductor Corporation SR2020PT SERIES_J2103.pdf Description: DIODE ARR SCHOTT 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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MBRS2535CT MBRS2535CT Taiwan Semiconductor Corporation MBRS2535CT%20SERIES_N2103.pdf Description: DIODE ARR SCHOTT 35V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar
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P6SMB100H P6SMB100H Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: 600W, 100V, 10%, UNIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 144V
Voltage - Breakdown (Min): 90V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 81V
Current - Peak Pulse (10/1000µs): 4.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB100 P6SMB100 Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: 600W, 100V, 10%, UNIDIRECTIONAL,
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 144V
Voltage - Breakdown (Min): 90V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 81V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB100CH P6SMB100CH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: 600W, 100V, 10%, BIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 144V
Voltage - Breakdown (Min): 90V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 81V
Current - Peak Pulse (10/1000µs): 4.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB100C P6SMB100C Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: 600W, 100V, 10%, BIDIRECTIONAL,
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 144V
Voltage - Breakdown (Min): 90V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 81V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE39H P6KE39H Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6KE39 P6KE39 Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6KE39CH P6KE39CH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE39C P6KE39C Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBJ9V0CA SMBJ9V0CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 9VWM 15.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ9V0CA SMBJ9V0CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 9VWM 15.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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P4KE16A P4KE16A Taiwan Semiconductor Corporation P4KE SERIES_N2104.pdf Description: TVS DIODE 13.6VWM 22.5V DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 13.6V
Current - Peak Pulse (10/1000µs): 18.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TQM130NB04CV RGG TQM130NB04CV RGG Taiwan Semiconductor Corporation TQM130NB04CV_C2403.pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V
Qualification: AEC-Q101
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TQM130NB04CV RGG TQM130NB04CV RGG Taiwan Semiconductor Corporation TQM130NB04CV_C2403.pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V
Qualification: AEC-Q101
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TQM300NB06CV RGG TQM300NB06CV RGG Taiwan Semiconductor Corporation TQM300NB06CV_C2403.pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V
Qualification: AEC-Q101
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TQM300NB06CV RGG TQM300NB06CV RGG Taiwan Semiconductor Corporation TQM300NB06CV_C2403.pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V
Qualification: AEC-Q101
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TQM250NB06CV RGG TQM250NB06CV RGG Taiwan Semiconductor Corporation TQM250NB06CV_C2403.pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V
Qualification: AEC-Q101
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TQM250NB06CV RGG TQM250NB06CV RGG Taiwan Semiconductor Corporation TQM250NB06CV_C2403.pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V
Qualification: AEC-Q101
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TQM100NB04CV RGG TQM100NB04CV RGG Taiwan Semiconductor Corporation pdf.php?pn=TQM100NB04CV Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
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TQM100NB04CV RGG TQM100NB04CV RGG Taiwan Semiconductor Corporation pdf.php?pn=TQM100NB04CV Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
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1.5SMC30CAHM6G 1.5SMC30CAHM6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC30CAHR7G 1.5SMC30CAHR7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE47H P6KE47H Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 47V, UNIDIRECTIONAL, TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 67.8V
Voltage - Breakdown (Min): 42.3V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 38.1V
Current - Peak Pulse (10/1000µs): 9.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE47 P6KE47 Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 47V, UNIDIRECTIONAL, TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 67.8V
Voltage - Breakdown (Min): 42.3V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 38.1V
Current - Peak Pulse (10/1000µs): 9.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE47C P6KE47C Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 38.1VWM 67.8V DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 67.8V
Voltage - Breakdown (Min): 42.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 38.1V
Current - Peak Pulse (10/1000µs): 9.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE47CH P6KE47CH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 38.1VWM 67.8V DO204AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 67.8V
Voltage - Breakdown (Min): 42.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 38.1V
Current - Peak Pulse (10/1000µs): 9.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB10CAHM4G P6SMB10CAHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZS55C22 RAG BZS55C22 RAG Taiwan Semiconductor Corporation BZS55C2V4 SERIES_E2301.pdf Description: DIODE ZENER 22V 500MW 1206
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: 1206
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBR2535CTH MBR2535CTH Taiwan Semiconductor Corporation MBR2535CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOTT 35V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ100CA SMCJ100CA Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 9.3A
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMCJ100CA SMCJ100CA Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 9.3A
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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SMCJ100 SMCJ100 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: 1500W, 123.5V, 10%, UNIDIRECTION
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 111V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SMCJ100 SMCJ100 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: 1500W, 123.5V, 10%, UNIDIRECTION
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 111V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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MBRF2060H MBRF2060H Taiwan Semiconductor Corporation MBRF2035%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 60V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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TST10102C TST10102C Taiwan Semiconductor Corporation datasheet Description: DIODE ARR SCHOTT 100V 5A TO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SR10150H SR10150H Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SRAF10150H SRAF10150H Taiwan Semiconductor Corporation Description: 10A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SRA10150H SRA10150H Taiwan Semiconductor Corporation Description: 10A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SRF20150H SRF20150H Taiwan Semiconductor Corporation Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SR20150H SR20150H Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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GBU802 GBU802 Taiwan Semiconductor Corporation GBU801 SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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MBRF1635 MBRF1635 Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 35V 16A ITO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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MBRF1635H MBRF1635H Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 35V 16A ITO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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BAT54GW BAT54GW Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 100MA SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPMR10DH TPMR10DH Taiwan Semiconductor Corporation TPMR10DH SERIES_B2309.pdf Description: DIODE STANDARD 200V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TPMR10DH TPMR10DH Taiwan Semiconductor Corporation TPMR10DH SERIES_B2309.pdf Description: DIODE STANDARD 200V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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HS1K-K HS1K-K Taiwan Semiconductor Corporation HS1D-K%20SERIES_F2111.pdf Description: DIODE STANDARD 800V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBR10H200CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 200V 10A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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1.5SMC33A 1.5SMC33A Taiwan Semiconductor Corporation 1.5SMC SERIES_S2207.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC33A 1.5SMC33A Taiwan Semiconductor Corporation 1.5SMC SERIES_S2207.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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10+2.12 EUR
16+1.32 EUR
50+0.98 EUR
100+0.87 EUR
500+0.67 EUR
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3KSMC33AH 3KSMC33AH Taiwan Semiconductor Corporation Description: 3000W, 32.7V, 5%, UNIDIRECTIONAL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 66.1A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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5KSMC33AH 5KSMC33AH Taiwan Semiconductor Corporation 5KSMC10AH%20SERIES_A2012.pdf Description: 5000W, 38.6V, 5%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V (Max)
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DBLS151GH DBLS151G%20SERIES_M2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DBLS153GH DBLS151G%20SERIES_M2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DBLS151G DBLS151G%20SERIES_M2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar
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DBLS152G DBLS151G%20SERIES_M2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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DBLS153G DBLS151G%20SERIES_M2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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DBLS152GH DBLS151G%20SERIES_M2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SR2040PTH SR2020PT SERIES_J2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SR2040PT SR2020PT SERIES_J2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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MBRS2535CT MBRS2535CT%20SERIES_N2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar
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P6SMB100H P6SMBH SERIES_A2102.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 100V, 10%, UNIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 144V
Voltage - Breakdown (Min): 90V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 81V
Current - Peak Pulse (10/1000µs): 4.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB100 P6SMB SERIES_Q2209.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 100V, 10%, UNIDIRECTIONAL,
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 144V
Voltage - Breakdown (Min): 90V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 81V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB100CH P6SMBH SERIES_A2102.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 100V, 10%, BIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 144V
Voltage - Breakdown (Min): 90V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 81V
Current - Peak Pulse (10/1000µs): 4.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB100C P6SMB SERIES_Q2209.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 100V, 10%, BIDIRECTIONAL,
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 144V
Voltage - Breakdown (Min): 90V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 81V
Current - Peak Pulse (10/1000µs): 4.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE39H P6KE SERIES_P2203.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6KE39 P6KE SERIES_P2203.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6KE39CH P6KE SERIES_P2203.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6KE39C P6KE SERIES_P2203.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMBJ9V0CA SMBJ SERIES_R2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ9V0CA SMBJ SERIES_R2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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10+2.23 EUR
16+1.39 EUR
100+0.92 EUR
500+0.71 EUR
1000+0.64 EUR
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P4KE16A P4KE SERIES_N2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6VWM 22.5V DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 13.6V
Current - Peak Pulse (10/1000µs): 18.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TQM130NB04CV RGG TQM130NB04CV_C2403.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TQM130NB04CV RGG TQM130NB04CV_C2403.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V
Qualification: AEC-Q101
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11+1.96 EUR
17+1.24 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.51 EUR
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TQM300NB06CV RGG TQM300NB06CV_C2403.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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5000+0.46 EUR
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TQM300NB06CV RGG TQM300NB06CV_C2403.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V
Qualification: AEC-Q101
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500+0.63 EUR
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TQM250NB06CV RGG TQM250NB06CV_C2403.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V
Qualification: AEC-Q101
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TQM250NB06CV RGG TQM250NB06CV_C2403.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V
Qualification: AEC-Q101
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500+0.68 EUR
1000+0.62 EUR
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TQM100NB04CV RGG pdf.php?pn=TQM100NB04CV
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
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TQM100NB04CV RGG pdf.php?pn=TQM100NB04CV
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
16+1.33 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.56 EUR
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1.5SMC30CAHM6G 1.5SMCH%20SERIES_B2207.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4V DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC30CAHR7G 1.5SMCH%20SERIES_B2207.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4V DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE47H P6KE SERIES_P2203.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 47V, UNIDIRECTIONAL, TVS
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 67.8V
Voltage - Breakdown (Min): 42.3V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 38.1V
Current - Peak Pulse (10/1000µs): 9.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE47 P6KE SERIES_P2203.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 47V, UNIDIRECTIONAL, TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 67.8V
Voltage - Breakdown (Min): 42.3V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 38.1V
Current - Peak Pulse (10/1000µs): 9.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE47C P6KE SERIES_P2203.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 38.1VWM 67.8V DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 67.8V
Voltage - Breakdown (Min): 42.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 38.1V
Current - Peak Pulse (10/1000µs): 9.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6KE47CH P6KE SERIES_P2203.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 38.1VWM 67.8V DO204AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 67.8V
Voltage - Breakdown (Min): 42.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 38.1V
Current - Peak Pulse (10/1000µs): 9.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB10CAHM4G P6SMB%20SERIES_Q2209.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZS55C22 RAG BZS55C2V4 SERIES_E2301.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 1206
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: 1206
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBR2535CTH MBR2535CT%20SERIES_K2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ100CA SMCJ SERIES_S2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 100VWM 162VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 9.3A
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMCJ100CA SMCJ SERIES_S2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 100VWM 162VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 9.3A
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 1426 Stücke:
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SMCJ100 SMCJ SERIES_S2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 123.5V, 10%, UNIDIRECTION
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 111V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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3000+0.71 EUR
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SMCJ100 SMCJ SERIES_S2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 123.5V, 10%, UNIDIRECTION
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 111V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 8.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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20+1.06 EUR
100+0.74 EUR
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MBRF2060H MBRF2035%20SERIES_K2105.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TST10102C datasheet
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 100V 5A TO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2000 Stücke:
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10+2.51 EUR
50+1.89 EUR
100+1.69 EUR
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SR10150H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRAF10150H
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRA10150H
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRF20150H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SR20150H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBU802 GBU801 SERIES_M2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 595 Stücke:
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6+3.58 EUR
10+2.28 EUR
50+1.71 EUR
100+1.54 EUR
500+1.21 EUR
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MBRF1635 MBRF1635%20SERIES_K2105.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A ITO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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MBRF1635H MBRF1635%20SERIES_K2105.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A ITO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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BAT54GW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 100MA SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
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TPMR10DH TPMR10DH SERIES_B2309.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TPMR10DH TPMR10DH SERIES_B2309.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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HS1K-K HS1D-K%20SERIES_F2111.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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MBR10H200CTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 200V 10A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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1.5SMC33A 1.5SMC SERIES_S2207.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5SMC33A 1.5SMC SERIES_S2207.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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AnzahlPrivatkunde
10+2.12 EUR
16+1.32 EUR
50+0.98 EUR
100+0.87 EUR
500+0.67 EUR
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3KSMC33AH
Hersteller: Taiwan Semiconductor Corporation
Description: 3000W, 32.7V, 5%, UNIDIRECTIONAL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 66.1A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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5KSMC33AH 5KSMC10AH%20SERIES_A2012.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 5000W, 38.6V, 5%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V (Max)
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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