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FR205G-T FR205G-T Taiwan Semiconductor Corporation FR201G-T%20SERIES_B2105.pdf Description: DIODE STANDARD 600V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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BY253G BY253G Taiwan Semiconductor Corporation BY251G SERIES_D2105.pdf Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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BZT52B8V2-G RHG BZT52B8V2-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: DIODE ZENER 8.2V 410MW SOD123
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT52B8V2-G RHG BZT52B8V2-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: DIODE ZENER 8.2V 410MW SOD123
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
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BZT52B8V2 RHG BZT52B8V2 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 8.2V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
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BZT52B8V2 RHG BZT52B8V2 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 8.2V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
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BZT52B8V2S BZT52B8V2S Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_I2411.pdf Description: DIODE ZENER 8.2V 200MW SOD323F
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT52B8V2 BZT52B8V2 Taiwan Semiconductor Corporation BZT52B2V4%20SERIES_F15.pdf Description: DIODE ZENER 8.2V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
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BZT52B8V2-G BZT52B8V2-G Taiwan Semiconductor Corporation BZT52B2V4-G%20SERIES_H2002.pdf Description: DIODE ZENER 8.2V 410MW SOD123
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT52B8V2S RRG BZT52B8V2S RRG Taiwan Semiconductor Corporation BZT52B2V4S SERIES_H2212.pdf Description: DIODE ZENER 8.2V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
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MMSZ4679 RHG MMSZ4679 RHG Taiwan Semiconductor Corporation MMSZ4678 SERIES_A2311.pdf Description: DIODE ZENER 2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMSZ4679 RHG MMSZ4679 RHG Taiwan Semiconductor Corporation MMSZ4678 SERIES_A2311.pdf Description: DIODE ZENER 2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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BZV55B20 L0G BZV55B20 L0G Taiwan Semiconductor Corporation BZV55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 20V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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BZV55B27 L0G BZV55B27 L0G Taiwan Semiconductor Corporation BZV55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 27V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
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BZV55B27 BZV55B27 Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 27V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
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BZV55B27 L1G BZV55B27 L1G Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 27V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Produkt ist nicht verfügbar
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BZX79B7V5 BZX79B7V5 Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_G2304.pdf Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Produkt ist nicht verfügbar
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BZX55C33 BZX55C33 Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
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MBRF10200CT MBRF10200CT Taiwan Semiconductor Corporation MBRF1035CT SERIES_M2105.pdf Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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P4KE6.8CA P4KE6.8CA Taiwan Semiconductor Corporation P4KE SERIES_N2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 40A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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SMDJ12CAH SMDJ12CAH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 150.8A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DBL105GH Taiwan Semiconductor Corporation DBL101G SERIES_R2103.pdf Description: BRIDGE RECT 1PHASE 600V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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DBL104GH Taiwan Semiconductor Corporation DBL101G SERIES_R2103.pdf Description: BRIDGE RECT 1PHASE 400V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: AEC-Q101
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DBL104G Taiwan Semiconductor Corporation DBL101G SERIES_R2103.pdf Description: BRIDGE RECT 1PHASE 400V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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HDBL103G Taiwan Semiconductor Corporation HDBL101G SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 200V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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HDBL104G Taiwan Semiconductor Corporation HDBL101G SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 400V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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HDBL106G Taiwan Semiconductor Corporation HDBL101G SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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HDBL105GH HDBL105GH Taiwan Semiconductor Corporation HDBL101G SERIES_G2103.pdf Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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HDBL104GH HDBL104GH Taiwan Semiconductor Corporation HDBL101G SERIES_G2103.pdf Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 400 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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500+0.7 EUR
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HDBL105G Taiwan Semiconductor Corporation HDBL101G SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 600V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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HDBL103GH HDBL103GH Taiwan Semiconductor Corporation HDBL101G SERIES_G2103.pdf Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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100+0.89 EUR
500+0.7 EUR
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HDBL101GH HDBL101GH Taiwan Semiconductor Corporation HDBL101G%20SERIES_G2103.pdf Description: 50NS, 1A, 50V, HIGH EFFICIENT RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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HDBL102GH HDBL102GH Taiwan Semiconductor Corporation HDBL101G%20SERIES_G2103.pdf Description: 50NS, 1A, 100V, HIGH EFFICIENT R
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL107G-T DBL107G-T Taiwan Semiconductor Corporation DBL104G-T%20SERIES_C2103.pdf Description: 1A, 1000V, STANDARD BRIDGE RECTI
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL106G-T DBL106G-T Taiwan Semiconductor Corporation DBL104G-T%20SERIES_C2103.pdf Description: 1A, 800V, STANDARD BRIDGE RECTIF
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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DBL104G-T DBL104G-T Taiwan Semiconductor Corporation DBL104G-T%20SERIES_C2103.pdf Description: 1A, 400V, STANDARD BRIDGE RECTIF
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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DBL105G-T DBL105G-T Taiwan Semiconductor Corporation DBL104G-T%20SERIES_C2103.pdf Description: 1A, 600V, STANDARD BRIDGE RECTIF
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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DBL101GHC1G Taiwan Semiconductor Corporation DBL101G%20SERIES_R2103.pdf Description: BRIDGE RECT 1PHASE 50V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL102G C1G Taiwan Semiconductor Corporation DBL101G%20SERIES_R2103.pdf Description: BRIDGE RECT 1PHASE 100V 1A DBL
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL102GHC1G Taiwan Semiconductor Corporation DBL101G%20SERIES_R2103.pdf Description: BRIDGE RECT 1PHASE 100V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL103G C1G Taiwan Semiconductor Corporation DBL101G%20SERIES_R2103.pdf Description: BRIDGE RECT 1PHASE 200V 1A DBL
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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DBL103GHC1G Taiwan Semiconductor Corporation DBL101G%20SERIES_R2103.pdf Description: BRIDGE RECT 1PHASE 200V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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HDBL101G C1G Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 50V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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HDBL102G C1G Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 100V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL103G Taiwan Semiconductor Corporation DBL101G SERIES_R2103.pdf Description: DIODE BRIDGE 1A 200V DBL
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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DBL103GH Taiwan Semiconductor Corporation Description: DIODE BRIDGE 1A 200V DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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1.5KE6.8H Taiwan Semiconductor Corporation Description: TVS DIODE 5.5VWM 10.8VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 145A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE6.8CH Taiwan Semiconductor Corporation Description: TVS DIODE 5.5VWM 10.8VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 145A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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UDZS10B R9G UDZS10B R9G Taiwan Semiconductor Corporation UDZS3V6B SERIES_H2212.pdf Description: DIODE ZENER 10V 200MW SOD323F
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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UDZS10B R9G UDZS10B R9G Taiwan Semiconductor Corporation UDZS3V6B SERIES_H2212.pdf Description: DIODE ZENER 10V 200MW SOD323F
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
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68+0.31 EUR
162+0.13 EUR
500+0.1 EUR
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5000+0.071 EUR
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1N5250B R0G 1N5250B R0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_H2301.pdf Description: DIODE ZENER 20V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZX79C22 BZX79C22 Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_H2304.pdf Description: DIODE ZENER 22V 500MW DO35
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SRAF860H SRAF860H Taiwan Semiconductor Corporation Description: 8A, 60V, PLANAR SCHOTTKY
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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SRAF860 SRAF860 Taiwan Semiconductor Corporation SRAF820 SERIES_K2105.pdf Description: 8A, 60V, PLANAR SCHOTTKY
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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1V5KE18CA 1V5KE18CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 15.3VWM 26.2V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 26.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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P4KE18A P4KE18A Taiwan Semiconductor Corporation P4KE SERIES_N2104.pdf Description: TVS DIODE 15.3VWM 25.5V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE18AH P4KE18AH Taiwan Semiconductor Corporation Description: TVS DIODE 15.3VWM 25.5V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 16.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBRF2545CT MBRF2545CT Taiwan Semiconductor Corporation MBRF2535CT SERIES_L2105.pdf Description: DIODE ARR SCHOT 45V 25A ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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TSM7NC65CF Taiwan Semiconductor Corporation Description: 650V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 50 V
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TSM10NC65CF Taiwan Semiconductor Corporation Description: 650V, 10A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FR205G-T FR201G-T%20SERIES_B2105.pdf
FR205G-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BY253G BY251G SERIES_D2105.pdf
BY253G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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BZT52B8V2-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B8V2-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 410MW SOD123
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT52B8V2-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B8V2-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 410MW SOD123
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
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BZT52B8V2 RHG BZT52B2V4 series_F15.pdf
BZT52B8V2 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
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BZT52B8V2 RHG BZT52B2V4 series_F15.pdf
BZT52B8V2 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
auf Bestellung 5850 Stücke:
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BZT52B8V2S BZT52B2V4S%20SERIES_I2411.pdf
BZT52B8V2S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 200MW SOD323F
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52B8V2 BZT52B2V4%20SERIES_F15.pdf
BZT52B8V2
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
Produkt ist nicht verfügbar
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BZT52B8V2-G BZT52B2V4-G%20SERIES_H2002.pdf
BZT52B8V2-G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 410MW SOD123
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52B8V2S RRG BZT52B2V4S SERIES_H2212.pdf
BZT52B8V2S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 630 nA @ 5 V
Produkt ist nicht verfügbar
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MMSZ4679 RHG MMSZ4678 SERIES_A2311.pdf
MMSZ4679 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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MMSZ4679 RHG MMSZ4678 SERIES_A2311.pdf
MMSZ4679 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 2997 Stücke:
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56+0.38 EUR
78+0.27 EUR
157+0.13 EUR
500+0.1 EUR
1000+0.077 EUR
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BZV55B20 L0G BZV55B2V4 SERIES_G2301.pdf
BZV55B20 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Produkt ist nicht verfügbar
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BZV55B27 L0G BZV55B2V4 SERIES_G2301.pdf
BZV55B27 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Produkt ist nicht verfügbar
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BZV55B27 BZV55B2V4%20SERIES_G2301.pdf
BZV55B27
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Produkt ist nicht verfügbar
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BZV55B27 L1G BZV55B2V4%20SERIES_G2301.pdf
BZV55B27 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Produkt ist nicht verfügbar
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BZX79B7V5 BZX79B2V4%20SERIES_G2304.pdf
BZX79B7V5
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Produkt ist nicht verfügbar
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BZX55C33 BZX55C2V0%20SERIES_E2301.pdf
BZX55C33
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Produkt ist nicht verfügbar
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MBRF10200CT MBRF1035CT SERIES_M2105.pdf
MBRF10200CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 986 Stücke:
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9+2.56 EUR
50+1.2 EUR
100+1.07 EUR
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P4KE6.8CA P4KE SERIES_N2104.pdf
P4KE6.8CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 40A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMDJ12CAH SMDJH SERIES_B2104.pdf
SMDJ12CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 150.8A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DBL105GH DBL101G SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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22+0.99 EUR
50+0.5 EUR
100+0.45 EUR
500+0.36 EUR
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DBL104GH DBL101G SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 4993 Stücke:
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17+1.24 EUR
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500+0.44 EUR
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DBL104G DBL101G SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
auf Bestellung 4798 Stücke:
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17+1.24 EUR
50+0.63 EUR
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HDBL103G HDBL101G SERIES_G2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 5050 Stücke:
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14+1.52 EUR
50+0.79 EUR
100+0.71 EUR
500+0.57 EUR
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HDBL104G HDBL101G SERIES_G2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
14+1.52 EUR
50+0.79 EUR
100+0.71 EUR
500+0.57 EUR
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HDBL106G HDBL101G SERIES_G2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 5000 Stücke:
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11+1.9 EUR
50+0.99 EUR
100+0.89 EUR
500+0.7 EUR
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2000+0.6 EUR
5000+0.55 EUR
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HDBL105GH HDBL101G SERIES_G2103.pdf
HDBL105GH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
17+1.29 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.6 EUR
5000+0.55 EUR
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HDBL104GH HDBL101G SERIES_G2103.pdf
HDBL104GH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 400 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
17+1.29 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.6 EUR
5000+0.55 EUR
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HDBL105G HDBL101G SERIES_G2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
50+0.99 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.6 EUR
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HDBL103GH HDBL101G SERIES_G2103.pdf
HDBL103GH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 4899 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
17+1.29 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.6 EUR
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HDBL101GH HDBL101G%20SERIES_G2103.pdf
HDBL101GH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 50V, HIGH EFFICIENT RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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HDBL102GH HDBL101G%20SERIES_G2103.pdf
HDBL102GH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 100V, HIGH EFFICIENT R
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL107G-T DBL104G-T%20SERIES_C2103.pdf
DBL107G-T
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 1000V, STANDARD BRIDGE RECTI
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL106G-T DBL104G-T%20SERIES_C2103.pdf
DBL106G-T
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 800V, STANDARD BRIDGE RECTIF
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL104G-T DBL104G-T%20SERIES_C2103.pdf
DBL104G-T
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 400V, STANDARD BRIDGE RECTIF
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL105G-T DBL104G-T%20SERIES_C2103.pdf
DBL105G-T
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 600V, STANDARD BRIDGE RECTIF
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL101GHC1G DBL101G%20SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL102G C1G DBL101G%20SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1A DBL
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL102GHC1G DBL101G%20SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL103G C1G DBL101G%20SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1A DBL
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL103GHC1G DBL101G%20SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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HDBL101G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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HDBL102G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1A DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL103G DBL101G SERIES_R2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 1A 200V DBL
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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DBL103GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 1A 200V DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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1.5KE6.8H
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.5VWM 10.8VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 145A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE6.8CH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.5VWM 10.8VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 145A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UDZS10B R9G UDZS3V6B SERIES_H2212.pdf
UDZS10B R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 200MW SOD323F
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UDZS10B R9G UDZS3V6B SERIES_H2212.pdf
UDZS10B R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 200MW SOD323F
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
Power - Max: 200 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 9880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
68+0.31 EUR
162+0.13 EUR
500+0.1 EUR
1000+0.077 EUR
2000+0.075 EUR
5000+0.071 EUR
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1N5250B R0G 1N5221B%20SERIES_H2301.pdf
1N5250B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX79C22 BZX79C2V0%20SERIES_H2304.pdf
BZX79C22
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SRAF860H
SRAF860H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 60V, PLANAR SCHOTTKY
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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SRAF860 SRAF820 SERIES_K2105.pdf
SRAF860
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 60V, PLANAR SCHOTTKY
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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1V5KE18CA 1V5KE SERIES_D2112.pdf
1V5KE18CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 26.2V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 26.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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P4KE18A P4KE SERIES_N2104.pdf
P4KE18A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4KE18AH
P4KE18AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 16.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF2545CT MBRF2535CT SERIES_L2105.pdf
MBRF2545CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 45V 25A ITO220AB
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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TSM7NC65CF
Hersteller: Taiwan Semiconductor Corporation
Description: 650V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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TSM10NC65CF
Hersteller: Taiwan Semiconductor Corporation
Description: 650V, 10A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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