Die Produkte taiwan semiconductor corporation
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1.5KE30A B0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6VWM 41.4VC DO201 Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 41.4V Voltage - Breakdown (Min): 28.5V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 25.6V Current - Peak Pulse (10/1000µs): 38A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5KE30AHA0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6VWM 41.4VC DO201 Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 41.4V Voltage - Breakdown (Min): 28.5V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 25.6V Current - Peak Pulse (10/1000µs): 38A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5KE30AHB0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6VWM 41.4VC DO201 Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 41.4V Voltage - Breakdown (Min): 28.5V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 25.6V Current - Peak Pulse (10/1000µs): 38A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5KE30A R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6VWM 41.4VC DO201 Current - Peak Pulse (10/1000µs): 38A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 41.4V Voltage - Breakdown (Min): 28.5V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 25.6V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5KE30AHR0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6VWM 41.4VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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GBPC2506 T0G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 25A GBPC Technology: Standard Diode Type: Single Phase Part Status: Active Packaging: Tray Supplier Device Package: GBPC Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 600V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Average Rectified (Io): 25A Voltage - Peak Reverse (Max): 600V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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GBPC2506M T0G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 25A GBPC-M Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Average Rectified (Io): 25A Voltage - Peak Reverse (Max): 600V Technology: Standard Diode Type: Single Phase Part Status: Active Packaging: Tray Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC-M Supplier Device Package: GBPC-M |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER601G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER602G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER603G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER604G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER605G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 6A R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Voltage - DC Reverse (Vr) (Max): 400 V Package / Case: R-6, Axial Packaging: Tape & Box (TB) Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER606G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A R-6 Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 65pF @ 4V, 1MHz Reverse Recovery Time (trr): 75 ns Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: R-6, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER601G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER602G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Bulk Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 80pF @ 4V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER603G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER604G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 6A R-6 Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER605G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Diode Type: Standard Mounting Type: Through Hole Package / Case: R-6, Axial Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER606G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A R-6 Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Mounting Type: Through Hole Package / Case: R-6, Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER601G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER602G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 6A R-6 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER603G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 6A R-6 Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER604G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER605G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 6A R-6 Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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HER606G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A R-6 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 65pF @ 4V, 1MHz Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R6, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BA159G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A DO204AL Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - DC Reverse (Vr) (Max): 1000 V Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
auf Bestellung 2642 Stücke Lieferzeit 21-28 Tag (e) |
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BA159G R1G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A DO204AL Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BA159G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A DO204AL Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Part Status: Discontinued at Digi-Key Reverse Recovery Time (trr): 250 ns Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BA159GHR1G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Part Status: Discontinued at Digi-Key Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BA159GHA0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A DO204AL Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BA159GHB0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A DO204AL Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BA159G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A DO204AL Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BA159GHR0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A DO204AL Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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TSM9N90ECI C0G |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 900V 9A ITO220AB Drain to Source Voltage (Vdss): 900 V Packaging: Tube Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: ITO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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TSM9N90ECZ C0G |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 900V 9A TO220 Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC33CA M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7VC DO214AB Voltage - Breakdown (Min): 31.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 28.2V Current - Peak Pulse (10/1000µs): 34A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 45.7V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC33CAHM6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 34A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC33CA V6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7VC DO214AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 34A Voltage - Clamping (Max) @ Ipp: 45.7V Voltage - Breakdown (Min): 31.4V Voltage - Reverse Standoff (Typ): 28.2V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC33CA V7G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7VC DO214AB Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 45.7V Voltage - Breakdown (Min): 31.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 28.2V Current - Peak Pulse (10/1000µs): 34A Applications: Telecom Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Part Status: Discontinued at Digi-Key Package / Case: DO-214AB, SMC Power Line Protection: No Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC33CA R7G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7VC DO214AB Voltage - Clamping (Max) @ Ipp: 45.7V Voltage - Breakdown (Min): 31.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 28.2V Current - Peak Pulse (10/1000µs): 34A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC33CAHR7G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7VC DO214AB Voltage - Reverse Standoff (Typ): 28.2V Current - Peak Pulse (10/1000µs): 34A Applications: Automotive Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC6.8CAHM6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8V 10.5V DO214AB Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5.8V Voltage - Breakdown (Min): 6.46V Voltage - Clamping (Max) @ Ipp: 10.5V Current - Peak Pulse (10/1000µs): 150A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC6.8CA M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8V 10.5V DO214AB Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 150A Voltage - Clamping (Max) @ Ipp: 10.5V Voltage - Breakdown (Min): 6.46V Voltage - Reverse Standoff (Typ): 5.8V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC6.8CA R7G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8V 10.5V DO214AB Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 150A Voltage - Clamping (Max) @ Ipp: 10.5V Voltage - Breakdown (Min): 6.46V Voltage - Reverse Standoff (Typ): 5.8V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Power Line Protection: No |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC6.8CAHR7G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8V 10.5V DO214AB Voltage - Clamping (Max) @ Ipp: 10.5V Voltage - Breakdown (Min): 6.46V Voltage - Reverse Standoff (Typ): 5.8V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 150A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BAV99S REG |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 85V 150MA SOT363 Current - Reverse Leakage @ Vr: 1 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-363 Current - Average Rectified (Io) (per Diode): 150mA Diode Configuration: 2 Pair Series Connection Reverse Recovery Time (trr): 6 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1PGSMA110ZHR3G |
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Taiwan Semiconductor Corporation |
Description: DIODE, ZENER, 110V Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 110V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1µA @ 83.6V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZT52C3V0-G RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3V 350MW SOD123 Packaging: Tape & Reel (TR) Supplier Device Package: SOD-123 Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Current - Reverse Leakage @ Vr: 10µA @ 1V Impedance (Max) (Zzt): 95 Ohms Power - Max: 350mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 3V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBRF10100 C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 10A ITO220AC Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 10A Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBRF10100HC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 10A ITO220AC Current - Average Rectified (Io): 10A Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBR10200 C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 10A TO220AC Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Supplier Device Package: TO-220AC Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Discontinued at Digi-Key Current - Average Rectified (Io): 10A Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBR10200HC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBR10200CTC0 |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 200V TO220AB Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBR10200CTHC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 200V TO220 Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBR10200CT C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 200V TO220 Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 10A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBS8 RCG |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 800MA MBS Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 800V Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Current - Average Rectified (Io): 800mA Voltage - Peak Reverse (Max): 800V Technology: Standard Diode Type: Single Phase Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: MBS Package / Case: 4-BESOP (0.173", 4.40mm Width) |
auf Bestellung 552 Stücke Lieferzeit 21-28 Tag (e) |
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ESH3C M6G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 3A DO214AB Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Current - Reverse Leakage @ Vr: 5µA @ 150V Reverse Recovery Time (trr): 20ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 150V Diode Type: Standard Part Status: Not For New Designs Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Capacitance @ Vr, F: 45pF @ 4V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ESH3C V6G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 3A DO214AB Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 150V Diode Type: Standard Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 150V Reverse Recovery Time (trr): 20ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ESH3C V7G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 3A DO214AB Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 150V Reverse Recovery Time (trr): 20ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 150V Diode Type: Standard Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ESH3C R7G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 3A DO214AB Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 150V Reverse Recovery Time (trr): 20ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 150V Diode Type: Standard Part Status: Not For New Designs Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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P6KE9.1A A0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.78V 13.4V DO204AC Part Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 13.4V Voltage - Breakdown (Min): 8.65V Unidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) Voltage - Reverse Standoff (Typ): 7.78V Current - Peak Pulse (10/1000µs): 47A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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P6KE9.1A B0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.78V 13.4V DO204AC Voltage - Clamping (Max) @ Ipp: 13.4V Voltage - Breakdown (Min): 8.65V Unidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) Voltage - Reverse Standoff (Typ): 7.78V Current - Peak Pulse (10/1000µs): 47A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Bulk Part Status: Active Power Line Protection: No Power - Peak Pulse: 600W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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P6KE9.1AHA0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.78V 13.4V DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 47A Voltage - Reverse Standoff (Typ): 7.78V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.65V Voltage - Clamping (Max) @ Ipp: 13.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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P6KE9.1AHB0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.78V 13.4V DO204AC Current - Peak Pulse (10/1000µs): 47A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Bulk Part Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 13.4V Voltage - Breakdown (Min): 8.65V Unidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) Voltage - Reverse Standoff (Typ): 7.78V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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P6KE9.1AHR0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.78V 13.4V DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 47A Voltage - Reverse Standoff (Typ): 7.78V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.65V Voltage - Clamping (Max) @ Ipp: 13.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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P6KE9.1A R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.78V 13.4V DO204AC Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 13.4V Voltage - Breakdown (Min): 8.65V Unidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) Voltage - Reverse Standoff (Typ): 7.78V Current - Peak Pulse (10/1000µs): 47A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL22 M4G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 2A DO214AA Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 400µA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL22HM4G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 2A DO214AA Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 400µA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 20V Diode Type: Schottky Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL23 M4G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A DO214AA Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 400µA @ 30V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 30V Operating Temperature - Junction: -55°C ~ 125°C Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL23HM4G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A DO214AA Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 400µA @ 30V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL24 M4G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A DO214AA Current - Reverse Leakage @ Vr: 400µA @ 40V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL24HM4G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A DO214AA Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 400µA @ 40V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL22 R5G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 2A DO214AA Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 400µA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 20V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL22HR5G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 2A DO214AA Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 400µA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 20V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL23 R5G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A DO214AA Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 400µA @ 30V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL23HR5G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A DO214AA Current - Reverse Leakage @ Vr: 400µA @ 30V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL24 R5G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A DO214AA Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 400 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SSL24HR5G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A DO214AA Current - Reverse Leakage @ Vr: 400 µA @ 40 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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P4SMA150CA M2G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 128V 207V DO214AC Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 2A Voltage - Clamping (Max) @ Ipp: 207V Voltage - Breakdown (Min): 143V Voltage - Reverse Standoff (Typ): 128V Packaging: Tape & Reel (TR) Bidirectional Channels: 1 Part Status: Active Type: Zener Supplier Device Package: DO-214AC (SMA) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZT52B5V1-G RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 410MW SOD123 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 410 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBRF20100 C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 20A ITO220AC Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 20A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBRF20100HC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 20A ITO220AC Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 20A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Diode Type: Schottky |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
,-TO-263AB.jpg "SFS1605G MNG") |
SFS1605G MNG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 16A TO263AB Base Part Number: SFS1605 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Current - Average Rectified (Io): 16A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Taiwan Semiconductor Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
.jpg "TSM4N60ECP ROG") |
TSM4N60ECP ROG |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO252 Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252, (D-Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 86.2W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO252 Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 86.2W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V |
auf Bestellung 2397 Stücke Lieferzeit 21-28 Tag (e) |
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TSM4N60ECH C5G |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 86.2W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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TSM950N10CW RPG |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 100V 6.5A SOT223 Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 9W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2455 Stücke - Preis und Lieferfrist anzeigen
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BAS70-06 RFG |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 70V 70MA SOT23 Current - Average Rectified (Io) (per Diode): 70mA (DC) Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Schottky Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Voltage - DC Reverse (Vr) (Max): 70 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOT-23 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1N4761A R1G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 1W DO204AL Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 75V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 175 Ohms Current - Reverse Leakage @ Vr: 5µA @ 56V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1N4761A A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 1W DO204AL Packaging: Tape & Box (TB) Part Status: Active Voltage - Zener (Nom) (Vz): 75V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 175 Ohms Current - Reverse Leakage @ Vr: 5µA @ 56V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1N4761A B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 1W DO204AL Packaging: Bulk Part Status: Active Voltage - Zener (Nom) (Vz): 75V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 175 Ohms Current - Reverse Leakage @ Vr: 5µA @ 56V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1N4761AHR1G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 1W DO204AL Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 75V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 175 Ohms Current - Reverse Leakage @ Vr: 5µA @ 56V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1N4761AHA0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 1W DO204AL Packaging: Tape & Box (TB) Part Status: Active Voltage - Zener (Nom) (Vz): 75V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 175 Ohms Current - Reverse Leakage @ Vr: 5µA @ 56V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1N4761AHB0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 1W DO204AL Packaging: Bulk Part Status: Active Voltage - Zener (Nom) (Vz): 75V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 175 Ohms Current - Reverse Leakage @ Vr: 5µA @ 56V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1N4761A R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 1W DO204AL Packaging: Tape & Reel (TR) Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 56V Impedance (Max) (Zzt): 175 Ohms Power - Max: 1W Part Status: Active Voltage - Zener (Nom) (Vz): 75V Tolerance: ±5% |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1N4761AHR0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 1W DO204AL Tolerance: ±5% Packaging: Tape & Reel (TR) Part Status: Active Power - Max: 1W Impedance (Max) (Zzt): 175 Ohms Current - Reverse Leakage @ Vr: 5µA @ 56V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Voltage - Zener (Nom) (Vz): 75V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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KBU406G T0 |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 4A KBU Packaging: Tray Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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KBU406G T0G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 4A KBU Packaging: Tray Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1SMB5945 M4G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 68V 3W DO214AA Impedance (Max) (Zzt): 120 Ohms Power - Max: 3W Tolerance: ±5% Voltage - Zener (Nom) (Vz): 68V Part Status: Active Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1µA @ 51.7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| 1.5KE30A B0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 25.6VWM 41.4VC DO201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
| 1.5KE30AHA0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 25.6VWM 41.4VC DO201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
| 1.5KE30AHB0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 25.6VWM 41.4VC DO201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 38A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
| 1.5KE30A R0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO201
Current - Peak Pulse (10/1000µs): 38A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 25.6V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 25.6VWM 41.4VC DO201
Current - Peak Pulse (10/1000µs): 38A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 25.6V
| 1.5KE30AHR0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 25.6VWM 41.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
| GBPC2506 T0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 25A GBPC
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tray
Supplier Device Package: GBPC
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Average Rectified (Io): 25A
Voltage - Peak Reverse (Max): 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 600V 25A GBPC
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tray
Supplier Device Package: GBPC
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Average Rectified (Io): 25A
Voltage - Peak Reverse (Max): 600V
| GBPC2506M T0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 25A GBPC-M
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Average Rectified (Io): 25A
Voltage - Peak Reverse (Max): 600V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tray
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC-M
Supplier Device Package: GBPC-M
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 25A GBPC-M
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Average Rectified (Io): 25A
Voltage - Peak Reverse (Max): 600V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tray
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC-M
Supplier Device Package: GBPC-M
| HER601G A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Box (TB)
| HER602G A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Box (TB)
| HER603G A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Box (TB)
| HER604G A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Box (TB)
| HER605G A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 6A R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Package / Case: R-6, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 6A R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Package / Case: R-6, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
| HER606G A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A R-6
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 6A R-6
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
| HER601G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Bulk
| HER602G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
| HER603G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Bulk
| HER604G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 6A R-6
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 6A R-6
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Bulk
| HER605G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Bulk
| HER606G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A R-6
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 6A R-6
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
| HER601G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
| HER602G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 6A R-6
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
| HER603G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 6A R-6
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 6A R-6
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
| HER604G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
| HER605G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 6A R-6
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 6A R-6
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
| HER606G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R6, Axial
Packaging: Tape & Reel (TR)
| BA159G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A DO204AL
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AL
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
auf Bestellung 2642 Stücke - Preis und Lieferfrist anzeigen
| BA159G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 2642 Stücke Description: DIODE GEN PURP 1KV 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
|
| BA159G R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1A DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
| BA159G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Discontinued at Digi-Key
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Discontinued at Digi-Key
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
| BA159GHR1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Part Status: Discontinued at Digi-Key
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Part Status: Discontinued at Digi-Key
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
| BA159GHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1A DO204AL
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
| BA159GHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1A DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
| BA159G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1A DO204AL
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
| BA159GHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1A DO204AL
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
| TSM9N90ECI C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 9A ITO220AB
Drain to Source Voltage (Vdss): 900 V
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 900V 9A ITO220AB
Drain to Source Voltage (Vdss): 900 V
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
| TSM9N90ECZ C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 900V 9A TO220
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 900V 9A TO220
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| 1.5SMC33CA M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AB
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 34A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 45.7V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 28.2VWM 45.7VC DO214AB
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 34A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 45.7V
| 1.5SMC33CAHM6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 28.2VWM 45.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
| 1.5SMC33CA V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 34A
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Voltage - Reverse Standoff (Typ): 28.2V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 28.2VWM 45.7VC DO214AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 34A
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Voltage - Reverse Standoff (Typ): 28.2V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
| 1.5SMC33CA V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 34A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Part Status: Discontinued at Digi-Key
Package / Case: DO-214AB, SMC
Power Line Protection: No
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 28.2VWM 45.7VC DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 34A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Part Status: Discontinued at Digi-Key
Package / Case: DO-214AB, SMC
Power Line Protection: No
Packaging: Tape & Reel (TR)
| 1.5SMC33CA R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AB
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 34A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 28.2VWM 45.7VC DO214AB
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 34A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
| 1.5SMC33CAHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AB
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 34A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 28.2VWM 45.7VC DO214AB
Voltage - Reverse Standoff (Typ): 28.2V
Current - Peak Pulse (10/1000µs): 34A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
| 1.5SMC6.8CAHM6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8V 10.5V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.8V
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Current - Peak Pulse (10/1000µs): 150A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5.8V 10.5V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.8V
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Current - Peak Pulse (10/1000µs): 150A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
| 1.5SMC6.8CA M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8V 10.5V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 150A
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Voltage - Reverse Standoff (Typ): 5.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5.8V 10.5V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 150A
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Voltage - Reverse Standoff (Typ): 5.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
| 1.5SMC6.8CA R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8V 10.5V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 150A
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Voltage - Reverse Standoff (Typ): 5.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5.8V 10.5V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 150A
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Voltage - Reverse Standoff (Typ): 5.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
| 1.5SMC6.8CAHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8V 10.5V DO214AB
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Voltage - Reverse Standoff (Typ): 5.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 150A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5.8V 10.5V DO214AB
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Voltage - Reverse Standoff (Typ): 5.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 150A
| BAV99S REG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 85V 150MA SOT363
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-363
Current - Average Rectified (Io) (per Diode): 150mA
Diode Configuration: 2 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 85V 150MA SOT363
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-363
Current - Average Rectified (Io) (per Diode): 150mA
Diode Configuration: 2 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| 1PGSMA110ZHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 110V
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±5%
Power - Max: 1.25W
Impedance (Max) (Zzt): 450 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE, ZENER, 110V
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±5%
Power - Max: 1.25W
Impedance (Max) (Zzt): 450 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
| BZT52C3V0-G RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 350MW SOD123
Packaging: Tape & Reel (TR)
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 10µA @ 1V
Impedance (Max) (Zzt): 95 Ohms
Power - Max: 350mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 3V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3V 350MW SOD123
Packaging: Tape & Reel (TR)
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 10µA @ 1V
Impedance (Max) (Zzt): 95 Ohms
Power - Max: 350mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 3V
Part Status: Active
| MBRF10100 C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A ITO220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 10A ITO220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
| MBRF10100HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A ITO220AC
Current - Average Rectified (Io): 10A
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 10A ITO220AC
Current - Average Rectified (Io): 10A
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
| MBR10200 C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Supplier Device Package: TO-220AC
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Discontinued at Digi-Key
Current - Average Rectified (Io): 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 10A TO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Supplier Device Package: TO-220AC
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Discontinued at Digi-Key
Current - Average Rectified (Io): 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
| MBR10200HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
| MBR10200CTC0 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V TO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTT 200V TO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
| MBR10200CTHC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V TO220
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 200V TO220
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
| MBR10200CT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V TO220
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 200V TO220
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
| MBS8 RCG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 800MA MBS
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Current - Average Rectified (Io): 800mA
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: MBS
Package / Case: 4-BESOP (0.173", 4.40mm Width)
auf Bestellung 552 Stücke Description: BRIDGE RECT 1P 800V 800MA MBS
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Current - Average Rectified (Io): 800mA
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: MBS
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Lieferzeit 21-28 Tag (e)
| ESH3C M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
| ESH3C V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 3A DO214AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 20ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 3A DO214AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 20ns
| ESH3C V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
| ESH3C R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
| P6KE9.1A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78V 13.4V DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 7.78V
Current - Peak Pulse (10/1000µs): 47A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 7.78V 13.4V DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 7.78V
Current - Peak Pulse (10/1000µs): 47A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
| P6KE9.1A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78V 13.4V DO204AC
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 7.78V
Current - Peak Pulse (10/1000µs): 47A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 7.78V 13.4V DO204AC
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 7.78V
Current - Peak Pulse (10/1000µs): 47A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
| P6KE9.1AHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78V 13.4V DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 7.78V 13.4V DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
| P6KE9.1AHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78V 13.4V DO204AC
Current - Peak Pulse (10/1000µs): 47A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 7.78V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 7.78V 13.4V DO204AC
Current - Peak Pulse (10/1000µs): 47A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 7.78V
| P6KE9.1AHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78V 13.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 7.78V 13.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
| P6KE9.1A R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78V 13.4V DO204AC
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 7.78V
Current - Peak Pulse (10/1000µs): 47A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 7.78V 13.4V DO204AC
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 7.78V
Current - Peak Pulse (10/1000µs): 47A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
| SSL22 M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 20V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
| SSL22HM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
| SSL23 M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Operating Temperature - Junction: -55°C ~ 125°C
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 2A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Operating Temperature - Junction: -55°C ~ 125°C
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
| SSL23HM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 2A DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
| SSL24 M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Current - Reverse Leakage @ Vr: 400µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 2A DO214AA
Current - Reverse Leakage @ Vr: 400µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
| SSL24HM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
| SSL22 R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 20V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
| SSL22HR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 20V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
| SSL23 R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 30V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 2A DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 30V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
| SSL23HR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AA
Current - Reverse Leakage @ Vr: 400µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 2A DO214AA
Current - Reverse Leakage @ Vr: 400µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
| SSL24 R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
| SSL24HR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 2A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
| P4SMA150CA M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 128V 207V DO214AC
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 2A
Voltage - Clamping (Max) @ Ipp: 207V
Voltage - Breakdown (Min): 143V
Voltage - Reverse Standoff (Typ): 128V
Packaging: Tape & Reel (TR)
Bidirectional Channels: 1
Part Status: Active
Type: Zener
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 128V 207V DO214AC
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 2A
Voltage - Clamping (Max) @ Ipp: 207V
Voltage - Breakdown (Min): 143V
Voltage - Reverse Standoff (Typ): 128V
Packaging: Tape & Reel (TR)
Bidirectional Channels: 1
Part Status: Active
Type: Zener
Supplier Device Package: DO-214AC (SMA)
| BZT52B5V1-G RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 5.1V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
| MBRF20100 C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 20A ITO220AC
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 20A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 20A ITO220AC
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 20A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
| MBRF20100HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 20A ITO220AC
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 20A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 20A ITO220AC
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 20A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Schottky
| SFS1605G MNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A TO263AB
Base Part Number: SFS1605
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Current - Average Rectified (Io): 16A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 16A TO263AB
Base Part Number: SFS1605
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Current - Average Rectified (Io): 16A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
| TSM4N60ECP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 86.2W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 600V 4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 86.2W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2397 Stücke - Preis und Lieferfrist anzeigen
| TSM4N60ECP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
auf Bestellung 2397 Stücke Description: MOSFET N-CHANNEL 600V 4A TO252
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Lieferzeit 21-28 Tag (e)
|
| TSM4N60ECH C5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
| TSM950N10CW RPG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 6.5A SOT223
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 9W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 6.5A SOT223
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 9W (Tc)
auf Bestellung 2455 Stücke - Preis und Lieferfrist anzeigen
| BAS70-06 RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 70V 70MA SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 70V 70MA SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23
| 1N4761A R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| 1N4761A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| 1N4761A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 1W DO204AL
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 75V 1W DO204AL
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| 1N4761AHR1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| 1N4761AHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| 1N4761AHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 1W DO204AL
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 75V 1W DO204AL
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| 1N4761A R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 56V
Impedance (Max) (Zzt): 175 Ohms
Power - Max: 1W
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 75V 1W DO204AL
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 56V
Impedance (Max) (Zzt): 175 Ohms
Power - Max: 1W
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
| 1N4761AHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Part Status: Active
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Voltage - Zener (Nom) (Vz): 75V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 75V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Part Status: Active
Power - Max: 1W
Impedance (Max) (Zzt): 175 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 56V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Voltage - Zener (Nom) (Vz): 75V
| KBU406G T0 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 800V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
| KBU406G T0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 800V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
| 1SMB5945 M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 68V 3W DO214AA
Impedance (Max) (Zzt): 120 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 68V
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1µA @ 51.7V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 68V 3W DO214AA
Impedance (Max) (Zzt): 120 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 68V
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1µA @ 51.7V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
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