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BZD27C160PHRQG BZD27C160PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 162V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.55%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 162 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Produkt ist nicht verfügbar
BZD27C160PHRTG BZD27C160PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 162V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.55%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 162 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Produkt ist nicht verfügbar
BZD27C16P RQG BZD27C16P RQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C16PHMQG BZD27C16PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C16PHMTG BZD27C16PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C16PHRQG BZD27C16PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C16PHRTG BZD27C16PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C18PHMQG BZD27C18PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C18PHMTG BZD27C18PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C18PHRQG BZD27C18PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C18PHRTG BZD27C18PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C20PHMQG BZD27C20PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C20PHMTG BZD27C20PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C20PHRQG BZD27C20PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C20PHRTG BZD27C20PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22P MQG BZD27C22P MQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22P MTG BZD27C22P MTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHMQG BZD27C22PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHMTG BZD27C22PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHRQG BZD27C22PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHRTG BZD27C22PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C27PHMQG BZD27C27PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C27PHMTG BZD27C27PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C27PHRQG BZD27C27PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C27PHRTG BZD27C27PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C30PHMQG BZD27C30PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C30PHMTG BZD27C30PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C30PHRQG BZD27C30PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C30PHRTG BZD27C30PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C33P RQG BZD27C33P RQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 33V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C33PHMTG BZD27C33PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 33V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C33PHRQG BZD27C33PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 33V 1W SUB SMA
Produkt ist nicht verfügbar
ES1BL MQG ES1BL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BL MTG ES1BL MTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BL RQG ES1BL RQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BL RTG ES1BL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BLHRQG ES1BLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL RQG ES1DL RQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1GL MQG ES1GL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1GL RQG ES1GL RQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1GL RTG ES1GL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1GLHRQG ES1GLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1JL MQG ES1JL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JL MTG ES1JL MTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JL RQG ES1JL RQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JL RTG ES1JL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JLHMQG ES1JLHMQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1JLHMTG ES1JLHMTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1JLHRQG ES1JLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1JLHRTG ES1JLHRTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
HS1KL MQG HS1KL MQG Taiwan Semiconductor Corporation HS1AL SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1KL MTG HS1KL MTG Taiwan Semiconductor Corporation HS1AL SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1KL RQG HS1KL RQG Taiwan Semiconductor Corporation HS1AL SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1KL RTG HS1KL RTG Taiwan Semiconductor Corporation HS1AL SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1ML MQG HS1ML MQG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HS1ML MTG HS1ML MTG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HS1ML RQG HS1ML RQG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HS1ML RTG HS1ML RTG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1BL MQG RS1BL MQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
RS1BL MTG RS1BL MTG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
Produkt ist nicht verfügbar
BZD27C160PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C160PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 162V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.55%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 162 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Produkt ist nicht verfügbar
BZD27C160PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C160PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 162V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.55%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 162 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Produkt ist nicht verfügbar
BZD27C16P RQG BZD27C%20SERIES_AA1806.pdf
BZD27C16P RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C16PHMQG BZD27C%20SERIES_AA1806.pdf
BZD27C16PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C16PHMTG BZD27C%20SERIES_AA1806.pdf
BZD27C16PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C16PHRQG BZD27C%20SERIES_AA1806.pdf
BZD27C16PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C16PHRTG BZD27C%20SERIES_AA1806.pdf
BZD27C16PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C18PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C18PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C18PHMTG BZD27C%20SERIES_AB2103.pdf
BZD27C18PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C18PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C18PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C18PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C18PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C20PHMQG BZD27C%20SERIES_AA1806.pdf
BZD27C20PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C20PHMTG BZD27C%20SERIES_AA1806.pdf
BZD27C20PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C20PHRQG BZD27C%20SERIES_AA1806.pdf
BZD27C20PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C20PHRTG BZD27C%20SERIES_AA1806.pdf
BZD27C20PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22P MQG BZD27C%20SERIES_AA1806.pdf
BZD27C22P MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22P MTG BZD27C%20SERIES_AA1806.pdf
BZD27C22P MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C22PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHMTG BZD27C%20SERIES_AB2103.pdf
BZD27C22PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C22PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C22PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C27PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C27PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C27PHMTG BZD27C%20SERIES_AB2103.pdf
BZD27C27PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C27PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C27PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C27PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C27PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C30PHMQG BZD27C%20SERIES_AA1806.pdf
BZD27C30PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C30PHMTG BZD27C%20SERIES_AA1806.pdf
BZD27C30PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C30PHRQG BZD27C%20SERIES_AA1806.pdf
BZD27C30PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C30PHRTG BZD27C%20SERIES_AA1806.pdf
BZD27C30PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C33P RQG BZD27C%20SERIES_AA1806.pdf
BZD27C33P RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C33PHMTG BZD27C%20SERIES_AA1806.pdf
BZD27C33PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C33PHRQG BZD27C%20SERIES_AA1806.pdf
BZD27C33PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Produkt ist nicht verfügbar
ES1BL MQG ES1AL%20SERIES_K15.pdf
ES1BL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BL MTG ES1AL%20SERIES_L2103.pdf
ES1BL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BL RQG ES1AL%20SERIES_L2103.pdf
ES1BL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BL RTG ES1AL%20SERIES_L2103.pdf
ES1BL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BLHRQG ES1AL%20SERIES_L2103.pdf
ES1BLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1DL RQG ES1AL%20SERIES_L2103.pdf
ES1DL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1GL MQG ES1AL%20SERIES_K15.pdf
ES1GL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1GL RQG ES1AL%20SERIES_K15.pdf
ES1GL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1GL RTG ES1AL%20SERIES_K15.pdf
ES1GL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1GLHRQG ES1AL%20SERIES_K15.pdf
ES1GLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1JL MQG ES1AL%20SERIES_L2103.pdf
ES1JL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JL MTG ES1AL%20SERIES_L2103.pdf
ES1JL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JL RQG ES1AL%20SERIES_L2103.pdf
ES1JL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JL RTG ES1AL%20SERIES_L2103.pdf
ES1JL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JLHMQG ES1AL%20SERIES_L2103.pdf
ES1JLHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1JLHMTG ES1AL%20SERIES_L2103.pdf
ES1JLHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1JLHRQG ES1AL%20SERIES_L2103.pdf
ES1JLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES1JLHRTG ES1AL%20SERIES_L2103.pdf
ES1JLHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
HS1KL MQG HS1AL SERIES_C2103.pdf
HS1KL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1KL MTG HS1AL SERIES_C2103.pdf
HS1KL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1KL RQG HS1AL SERIES_C2103.pdf
HS1KL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1KL RTG HS1AL SERIES_C2103.pdf
HS1KL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1ML MQG HS1AL%20SERIES_C2103.pdf
HS1ML MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HS1ML MTG HS1AL%20SERIES_C2103.pdf
HS1ML MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HS1ML RQG HS1AL%20SERIES_C2103.pdf
HS1ML RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HS1ML RTG HS1AL%20SERIES_C2103.pdf
HS1ML RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
RS1BL MQG RS1AL%20SERIES_N2103.pdf
RS1BL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
RS1BL MTG RS1AL%20SERIES_M15.pdf
RS1BL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Produkt ist nicht verfügbar
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