Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (66228) > Seite 1098 nach 1104
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| S1GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; thinSMA; reel,tape Type of diode: rectifying Case: thinSMA Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| S1JAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; thinSMA; reel,tape Type of diode: rectifying Case: thinSMA Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| S1KAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; thinSMA; reel,tape Type of diode: rectifying Case: thinSMA Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| S1MAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; thinSMA; reel,tape Type of diode: rectifying Case: thinSMA Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| S2GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape Type of diode: rectifying Case: thinSMA Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| S2JAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 2A; thinSMA; reel,tape Type of diode: rectifying Case: thinSMA Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| S2KAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 2A; thinSMA; reel,tape Type of diode: rectifying Case: thinSMA Mounting: SMD Max. off-state voltage: 0.8kV Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| S2MAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape Type of diode: rectifying Case: thinSMA Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| HS1GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; thinSMA; reel,tape Type of diode: rectifying Case: thinSMA Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: superfast switching |
Produkt ist nicht verfügbar |
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| SK310B | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZW04-8V5B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 9.5V; 27.6A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Max. forward impulse current: 27.6A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
Produkt ist nicht verfügbar |
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| P4KE10CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 9.5V; 29A; bidirectional; DO41; 0.4kW; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
Produkt ist nicht verfügbar |
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| P4SMA10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
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| BZW04-8V5 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 9.5V; 27.6A; unidirectional; DO41; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Max. forward impulse current: 27.6A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
Produkt ist nicht verfügbar |
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| P4KE10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
Produkt ist nicht verfügbar |
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| P4SMA10CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
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MBR1560CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V Case: TO220AB Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Load current: 15A Max. forward impulse current: 150A Max. off-state voltage: 60V Kind of package: tube Type of diode: Schottky rectifying Mounting: THT |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZW06-33 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Manufacturer series: BZW06 |
Produkt ist nicht verfügbar |
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| SMCJ14A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 15.6÷17.2V; 67A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 67A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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| 1SMA4749H | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 24V; SMD; reel,tape; DO214AC,SMA; single diode Type of diode: Zener Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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BZT52C3V6 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 4.5µA Zener current: 5mA |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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| S10MCH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 10A; SMC; reel,tape Mounting: SMD Case: SMC Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Load current: 10A Max. off-state voltage: 1kV Application: automotive industry |
Produkt ist nicht verfügbar |
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KBU1006G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 10A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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| KBU1004G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A Max. off-state voltage: 0.4kV Load current: 10A Features of semiconductor devices: glass passivated Case: KBU Leads: round pin Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward voltage: 1.1V Max. forward impulse current: 200A Kind of package: in-tray Version: flat |
Produkt ist nicht verfügbar |
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| KBU1007G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A Case: KBU Version: flat Features of semiconductor devices: glass passivated Leads: round pin Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 10A Max. forward voltage: 1.1V Max. off-state voltage: 1kV Max. forward impulse current: 200A Kind of package: in-tray |
Produkt ist nicht verfügbar |
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| MBR3060PT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 0.75V Max. forward impulse current: 200A Kind of package: tube Max. load current: 30A |
Produkt ist nicht verfügbar |
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| MBR20L100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 850mV Max. forward voltage: 0.85V Max. load current: 20A Load current: 20A Max. off-state voltage: 100V Semiconductor structure: common cathode Type of diode: Schottky rectifying Mounting: THT Case: TO220AB Leakage current: 20µA |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SK84C | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 150A Kind of package: reel; tape |
auf Bestellung 968 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMBJ28CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape Tolerance: ±5% |
Produkt ist nicht verfügbar |
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| SMBJ28CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
Produkt ist nicht verfügbar |
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1.5KE400CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 548V Breakdown voltage: 400V Max. forward impulse current: 2.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) |
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| UG1004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO220AB Max. load current: 10A Application: automotive industry |
Produkt ist nicht verfügbar |
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| SFA1004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10A; TO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO220AC Application: automotive industry |
Produkt ist nicht verfügbar |
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| SFS1004GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: D2PAK Max. load current: 10A Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| UGF1004GAH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: ITO220AB Max. load current: 10A Application: automotive industry |
Produkt ist nicht verfügbar |
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| UGF1004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: ITO220AB Max. load current: 10A Application: automotive industry |
Produkt ist nicht verfügbar |
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| HERF1004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 10A Application: automotive industry |
Produkt ist nicht verfügbar |
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| SFAF1004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10A; ITO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: ITO220AC Application: automotive industry |
Produkt ist nicht verfügbar |
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| UG1005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry Mounting: THT Case: TO220AB Semiconductor structure: common cathode; double Type of diode: rectifying Features of semiconductor devices: ultrafast switching Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 300V Application: automotive industry |
Produkt ist nicht verfügbar |
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| SFS1005GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 5Ax2; D2PAK; reel,tape Mounting: SMD Case: D2PAK Semiconductor structure: common cathode; double Type of diode: rectifying Kind of package: reel; tape Features of semiconductor devices: superfast switching Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 300V Application: automotive industry |
Produkt ist nicht verfügbar |
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| HER1005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; automotive industry Semiconductor structure: common cathode; double Case: TO220AB Features of semiconductor devices: superfast switching Type of diode: rectifying Mounting: THT Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 0.4kV Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| GBPC3506W | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: in-tray Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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BZX55C33 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 33V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 33V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C3V6 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; 5mA; tape; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 2µA Zener current: 5mA |
auf Bestellung 1648 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C36 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 36V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C39 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 39V; 2.5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 39V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 2.5mA |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C30 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM950N10CW RPG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.1A Power dissipation: 9W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SMCJ58A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 16A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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SS23M | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS23MH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| TQM043NH04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U Type of transistor: N-MOSFET Case: PDFN56U Polarisation: unipolar Gate charge: 42nC On-state resistance: 4.3mΩ Drain current: 54A Gate-source voltage: ±16V Power dissipation: 100W Drain-source voltage: 40V Kind of package: tape Kind of channel: enhancement Mounting: SMD |
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| TSM110NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 23nC Kind of package: tape Kind of channel: enhancement |
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| TQM025NH04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U Type of transistor: N-MOSFET Case: PDFN56U Polarisation: unipolar Gate charge: 63.3nC On-state resistance: 2.5mΩ Drain current: 100A Gate-source voltage: ±16V Power dissipation: 136W Drain-source voltage: 40V Kind of package: tape Kind of channel: enhancement Mounting: SMD |
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| TQM019NH04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U Type of transistor: N-MOSFET Case: PDFN56U Polarisation: unipolar Gate charge: 104nC On-state resistance: 1.9mΩ Drain current: 100A Gate-source voltage: ±16V Power dissipation: 150W Drain-source voltage: 40V Kind of package: tape Kind of channel: enhancement Mounting: SMD |
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| TQM032NH04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U Type of transistor: N-MOSFET Case: PDFN56U Polarisation: unipolar Gate charge: 50nC On-state resistance: 3.2mΩ Drain current: 81A Gate-source voltage: ±16V Power dissipation: 115W Drain-source voltage: 40V Kind of package: tape Kind of channel: enhancement Mounting: SMD |
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| TQM056NH04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U Type of transistor: N-MOSFET Case: PDFN56U Polarisation: unipolar Gate charge: 30.4nC On-state resistance: 5.6mΩ Drain current: 54A Gate-source voltage: ±16V Power dissipation: 78.9W Drain-source voltage: 40V Kind of package: tape Kind of channel: enhancement Mounting: SMD |
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| TQM070NH04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U Type of transistor: N-MOSFET Case: PDFN56U Polarisation: unipolar Gate charge: 23nC On-state resistance: 7mΩ Drain current: 54A Gate-source voltage: ±16V Power dissipation: 46.8W Drain-source voltage: 40V Kind of package: tape Kind of channel: enhancement Mounting: SMD |
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| TSM025NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U Type of transistor: N-MOSFET Case: PDFN56U Polarisation: unipolar Gate charge: 112nC On-state resistance: 2.5mΩ Drain current: 24A Gate-source voltage: ±20V Power dissipation: 45W Drain-source voltage: 40V Kind of package: tape Kind of channel: enhancement Mounting: SMD |
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| TSM033NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Type of transistor: N-MOSFET Case: PDFN56U Polarisation: unipolar Gate charge: 79nC On-state resistance: 3.3mΩ Drain current: 21A Gate-source voltage: ±20V Power dissipation: 36W Drain-source voltage: 40V Kind of package: tape Kind of channel: enhancement Mounting: SMD |
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| S1GAL |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| S1JAL |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| S1KAL |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| S1MAL |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| S2GAL |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| S2JAL |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| S2KAL |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| S2MAL |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| HS1GAL |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
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| SK310B |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.086 EUR |
| BZW04-8V5B |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 27.6A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 27.6A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| P4KE10CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 29A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 29A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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| P4SMA10A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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| BZW04-8V5 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 27.6A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 27.6A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| P4KE10A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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| P4SMA10CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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| MBR1560CT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 60V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 60V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 79+ | 0.92 EUR |
| 91+ | 0.79 EUR |
| BZW06-33 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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| SMCJ14A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 67A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 67A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| 1SMA4749H |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 24V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 24V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
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| BZT52C3V6 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| S10MCH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; reel,tape
Mounting: SMD
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; reel,tape
Mounting: SMD
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
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| KBU1006G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.96 EUR |
| 37+ | 1.97 EUR |
| 46+ | 1.56 EUR |
| KBU1004G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: in-tray
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: in-tray
Version: flat
Produkt ist nicht verfügbar
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| KBU1007G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Case: KBU
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 10A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Case: KBU
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 10A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: in-tray
Produkt ist nicht verfügbar
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| MBR3060PT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Produkt ist nicht verfügbar
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| MBR20L100CT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 850mV
Max. forward voltage: 0.85V
Max. load current: 20A
Load current: 20A
Max. off-state voltage: 100V
Semiconductor structure: common cathode
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Leakage current: 20µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 850mV
Max. forward voltage: 0.85V
Max. load current: 20A
Load current: 20A
Max. off-state voltage: 100V
Semiconductor structure: common cathode
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Leakage current: 20µA
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 1 EUR |
| SK84C |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 122+ | 0.59 EUR |
| 264+ | 0.27 EUR |
| 280+ | 0.26 EUR |
| SMBJ28CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SMBJ28CAH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Produkt ist nicht verfügbar
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| 1.5KE400CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 104+ | 0.69 EUR |
| 122+ | 0.59 EUR |
| UG1004GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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| SFA1004GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
Produkt ist nicht verfügbar
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| SFS1004GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. load current: 10A
Application: automotive industry
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. load current: 10A
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| UGF1004GAH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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| UGF1004GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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| HERF1004GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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| SFAF1004GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
Produkt ist nicht verfügbar
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| UG1005GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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| SFS1005GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 5Ax2; D2PAK; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 5Ax2; D2PAK; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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| HER1005GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
Produkt ist nicht verfügbar
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| GBPC3506W |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55C33 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 240+ | 0.3 EUR |
| BZX55C3V6 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
auf Bestellung 1648 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 538+ | 0.13 EUR |
| 834+ | 0.086 EUR |
| 1132+ | 0.063 EUR |
| 1489+ | 0.048 EUR |
| 1648+ | 0.043 EUR |
| BZX55C36 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 220+ | 0.33 EUR |
| BZX55C39 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 940+ | 0.076 EUR |
| BZX55C30 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| TSM950N10CW RPG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
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| SMCJ58A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SS23M |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 432+ | 0.17 EUR |
| 569+ | 0.13 EUR |
| 633+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| SS23MH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
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| TQM043NH04LCR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 4.3mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 100W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 4.3mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 100W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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| TSM110NB04LCR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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| TQM025NH04LCR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 63.3nC
On-state resistance: 2.5mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 136W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 63.3nC
On-state resistance: 2.5mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 136W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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| TQM019NH04LCR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 104nC
On-state resistance: 1.9mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 150W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 104nC
On-state resistance: 1.9mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 150W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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| TQM032NH04LCR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 3.2mΩ
Drain current: 81A
Gate-source voltage: ±16V
Power dissipation: 115W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 3.2mΩ
Drain current: 81A
Gate-source voltage: ±16V
Power dissipation: 115W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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| TQM056NH04LCR RLG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 30.4nC
On-state resistance: 5.6mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 78.9W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 30.4nC
On-state resistance: 5.6mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 78.9W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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| TQM070NH04LCR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 7mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 46.8W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 7mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 46.8W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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| TSM025NB04LCR RLG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 112nC
On-state resistance: 2.5mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 112nC
On-state resistance: 2.5mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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| TSM033NB04LCR RLG |
![]() |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 3.3mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 3.3mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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