Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (66362) > Seite 1099 nach 1107
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| 1N4749A | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Zener current: 10.5mA Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
Produkt ist nicht verfügbar |
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| SMBJ6V5A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22V Max. forward impulse current: 53.6A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.5mA Application: general purpose Operating temperature: -55...150°C Number of channels: 1 Manufacturer series: SMBJ |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM2N7002AKDCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.24W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SF2005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
Produkt ist nicht verfügbar |
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| TSCDT10065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 10A |
Produkt ist nicht verfügbar |
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| TSCDT20065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube |
Produkt ist nicht verfügbar |
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| SMCJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| MBRS1045CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.8V |
Produkt ist nicht verfügbar |
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| BZD27C15PW | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Zener current: 50mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123W Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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BZX55C47 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA Tolerance: ±5% Type of diode: Zener Leakage current: 0.1µA Zener current: 2.5mA Power dissipation: 0.5W Zener voltage: 47V Case: DO35 Semiconductor structure: single diode Mounting: THT Kind of package: tape |
auf Bestellung 419 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| 5.0SMDJ30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 103A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 5.0SMDJ |
Produkt ist nicht verfügbar |
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| SMBJ10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 37A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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TSM60NB150CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 43nC |
Produkt ist nicht verfügbar |
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| TSM60NE285CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 139W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.285Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC |
Produkt ist nicht verfügbar |
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BZX55C11 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
auf Bestellung 415 Stücke: Lieferzeit 14-21 Tag (e) |
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SR310 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.85V Max. forward impulse current: 80A Kind of package: tape |
auf Bestellung 144 Stücke: Lieferzeit 14-21 Tag (e) |
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| SF1604PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry Mounting: THT Type of diode: rectifying Case: TO3P Semiconductor structure: common cathode; double Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Application: automotive industry Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 200V |
Produkt ist nicht verfügbar |
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| SF1604GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns Mounting: THT Type of diode: rectifying Case: TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Application: automotive industry Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 200V |
Produkt ist nicht verfügbar |
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| SF1606GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns Mounting: THT Type of diode: rectifying Case: TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Application: automotive industry Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 125A Max. off-state voltage: 0.4kV |
Produkt ist nicht verfügbar |
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| SF1606PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry Mounting: THT Type of diode: rectifying Case: TO3P Semiconductor structure: common cathode; double Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Application: automotive industry Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV |
Produkt ist nicht verfügbar |
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| SF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns Mounting: THT Type of diode: rectifying Case: TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Application: automotive industry Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
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| SF1608PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry Mounting: THT Type of diode: rectifying Case: TO3P Semiconductor structure: common cathode; double Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Application: automotive industry Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
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| SF16G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns Mounting: THT Type of diode: rectifying Case: DO41 Semiconductor structure: single diode Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 0.4kV |
Produkt ist nicht verfügbar |
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| HER1007GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; automotive industry Semiconductor structure: common cathode; double Case: TO220AB Features of semiconductor devices: superfast switching Type of diode: rectifying Mounting: THT Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 0.8kV Application: automotive industry |
Produkt ist nicht verfügbar |
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SS36 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 70A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BAT54W RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape |
auf Bestellung 991 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B3V6 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA Zener current: 5mA |
auf Bestellung 815 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR745 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Case: TO220AC Forward voltage at If: 840mV |
Produkt ist nicht verfügbar |
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MBR745 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.75V Max. load current: 15A |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMAJ40A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
Produkt ist nicht verfügbar |
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MUR820 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 0.975V Reverse recovery time: 25ns |
auf Bestellung 391 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUR820H | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Reverse recovery time: 25ns Application: automotive industry |
Produkt ist nicht verfügbar |
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| SMAJ48A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 53.3V; 5.2A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
Produkt ist nicht verfügbar |
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| SMAJ43CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 47.8V; 5.8A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8V Max. forward impulse current: 5.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
Produkt ist nicht verfügbar |
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1PGSMB5934 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Zener current: 63mA |
auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
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| ES2J | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.7V Features of semiconductor devices: superfast switching Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 1N4746A | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Zener current: 14mA Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
Produkt ist nicht verfügbar |
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| TESDH5V0U04P2Q1 RNG | TAIWAN SEMICONDUCTOR |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3 Case: DFN1006-3 Mounting: SMD Kind of package: reel; tape Version: ESD Semiconductor structure: common anode; double Type of diode: TVS array Leakage current: 0.1µA Max. forward impulse current: 4A Max. off-state voltage: 5V Breakdown voltage: 7...9V Peak pulse power dissipation: 60W |
Produkt ist nicht verfügbar |
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| ABS6 | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 0.95V Max. forward impulse current: 30A Case: ABS Max. off-state voltage: 0.6kV Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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ABS6 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 0.95V Max. forward impulse current: 30A Case: ABS Max. off-state voltage: 0.6kV Features of semiconductor devices: glass passivated |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| KBU802G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| KBU803G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| KBU804G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| KBU805G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| KBU807G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SS22M | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape Mounting: SMD Case: microSMA Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.6V Load current: 2A Max. off-state voltage: 20V Max. forward impulse current: 25A Kind of package: reel; tape |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS22L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape Mounting: SMD Case: subSMA Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 2A Max. off-state voltage: 20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZX55C22 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C24 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 24V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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| TS25P07G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 0.3kA Case: TS-6P Electrical mounting: THT Max. forward voltage: 1.1V Max. load current: 25A |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| SR110 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 1A; DO41 Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Load current: 1A Max. off-state voltage: 100V |
Produkt ist nicht verfügbar |
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| SFT16G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; TS1 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TS1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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S3M V6G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Case: SMC Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Capacitance: 60pF Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape Features of semiconductor devices: glass passivated Reverse recovery time: 1.5µs |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C10 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA Zener current: 5mA |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C18 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C30 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C36 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
auf Bestellung 948 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZT52C13 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 90nA Zener current: 5mA |
auf Bestellung 895 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C11 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 11V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 90nA |
auf Bestellung 860 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C12 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Leakage current: 90nA Zener current: 5mA Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 12V Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD |
auf Bestellung 485 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N4749A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ6V5A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Application: general purpose
Operating temperature: -55...150°C
Number of channels: 1
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Application: general purpose
Operating temperature: -55...150°C
Number of channels: 1
Manufacturer series: SMBJ
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| TSM2N7002AKDCU6 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SF2005GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSCDT10065G1 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSCDT20065G1 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ30AH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRS1045CT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C15PW |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55C47 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Tolerance: ±5%
Type of diode: Zener
Leakage current: 0.1µA
Zener current: 2.5mA
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Tolerance: ±5%
Type of diode: Zener
Leakage current: 0.1µA
Zener current: 2.5mA
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 5.0SMDJ30A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ10A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60NB150CF C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60NE285CH C5G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 139W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 139W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55C11 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 415+ | 0.17 EUR |
| SR310 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 139+ | 0.51 EUR |
| 144+ | 0.5 EUR |
| SF1604PTH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SF1604GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SF1606GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SF1606PTH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
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| SF1608GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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| SF1608PTH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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| SF16G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
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| HER1007GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
Application: automotive industry
Produkt ist nicht verfügbar
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| SS36 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BAT54W RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 715+ | 0.1 EUR |
| 991+ | 0.072 EUR |
| BZX55B3V6 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
auf Bestellung 815 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 815+ | 0.087 EUR |
| MBR745 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Case: TO220AC
Forward voltage at If: 840mV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Case: TO220AC
Forward voltage at If: 840mV
Produkt ist nicht verfügbar
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| MBR745 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. load current: 15A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. load current: 15A
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 80+ | 0.89 EUR |
| 94+ | 0.76 EUR |
| SMAJ40A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| MUR820 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 117+ | 0.61 EUR |
| 136+ | 0.53 EUR |
| MUR820H |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
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| SMAJ48A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ43CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| 1PGSMB5934 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 63mA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 63mA
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 161+ | 0.44 EUR |
| 211+ | 0.34 EUR |
| ES2J |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| 1N4746A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 14mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 14mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
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| TESDH5V0U04P2Q1 RNG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
Produkt ist nicht verfügbar
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| ABS6 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
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| ABS6 RGG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.76 EUR |
| KBU802G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| KBU803G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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| KBU804G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| KBU805G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| KBU807G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| SS22M |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: microSMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: microSMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 385+ | 0.19 EUR |
| 511+ | 0.14 EUR |
| 747+ | 0.096 EUR |
| 782+ | 0.092 EUR |
| SS22L |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: subSMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. off-state voltage: 20V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: subSMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. off-state voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BZX55C22 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 285+ | 0.26 EUR |
| BZX55C24 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1270+ | 0.056 EUR |
| 1300+ | 0.054 EUR |
| TS25P07G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 0.3kA
Case: TS-6P
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. load current: 25A
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 0.3kA
Case: TS-6P
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. load current: 25A
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| SR110 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. off-state voltage: 100V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SFT16G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; TS1
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TS1
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; TS1
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TS1
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| S3M V6G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.93 EUR |
| BZX84C10 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Zener current: 5mA
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 680+ | 0.11 EUR |
| 980+ | 0.073 EUR |
| BZT52C18 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 660+ | 0.11 EUR |
| BZT52C30 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 960+ | 0.074 EUR |
| BZT52C36 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BZT52C13 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 782+ | 0.092 EUR |
| 895+ | 0.08 EUR |
| BZT52C11 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 860+ | 0.083 EUR |
| BZT52C12 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Leakage current: 90nA
Zener current: 5mA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Leakage current: 90nA
Zener current: 5mA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 485+ | 0.14 EUR |

















