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KBU1004G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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SK84C SK84C TAIWAN SEMICONDUCTOR SK84C00000S040.pdf SK82C SERIES_L2102.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
136+0.53 EUR
175+0.41 EUR
500+0.33 EUR
Mindestbestellmenge: 112
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SMBJ28CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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SMBJ28CAH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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1.5KE400CA 1.5KE400CA TAIWAN SEMICONDUCTOR 1.5KExx_SER.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
auf Bestellung 122 Stücke:
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85+0.84 EUR
104+0.69 EUR
122+0.59 EUR
Mindestbestellmenge: 85
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UG1004GH TAIWAN SEMICONDUCTOR UG1004G SERIES_B2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
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SFA1004GH TAIWAN SEMICONDUCTOR SFA1001G%20SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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SFS1004GH TAIWAN SEMICONDUCTOR SFS1001GH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 35ns; D2PAK; Ufmax: 975mV
Case: D2PAK
Application: automotive industry
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.975V
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 200V
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UGF1004GAH TAIWAN SEMICONDUCTOR UGF1004GA SERIES_C2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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UGF1004GH TAIWAN SEMICONDUCTOR UGF1004G SERIES_F2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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HERF1004GH TAIWAN SEMICONDUCTOR HERF1001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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SFAF1004GH TAIWAN SEMICONDUCTOR SFAF1001G SERIES_H2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
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BZX55C33 R0G BZX55C33 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 240 Stücke:
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240+0.3 EUR
Mindestbestellmenge: 240
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BZX55C3V6 R0G BZX55C3V6 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
auf Bestellung 1648 Stücke:
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385+0.19 EUR
538+0.13 EUR
834+0.086 EUR
1132+0.063 EUR
1489+0.048 EUR
1648+0.043 EUR
Mindestbestellmenge: 385
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BZX55C36 R0G BZX55C36 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 220 Stücke:
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220+0.33 EUR
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BZX55C39 R0G BZX55C39 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
auf Bestellung 940 Stücke:
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940+0.076 EUR
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BZX55C30 R0G BZX55C30 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Kind of package: tape
Zener current: 5mA
auf Bestellung 40 Stücke:
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40+1.79 EUR
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SMCJ58A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SS23M SS23M TAIWAN SEMICONDUCTOR SS22M SERIES_M2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
432+0.17 EUR
569+0.13 EUR
633+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 358
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SMBJ58A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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SMBJ58AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
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SMBJ36CAH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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SMBJ33CAH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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RMB4S TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85BC31995A60D6&compId=RMB2S_ser.pdf?ci_sign=01ba02c3ea6cdad1633d21ff914fcbf48690bdc3 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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BZX55C2V7 R0G BZX55C2V7 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 584 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
496+0.14 EUR
584+0.12 EUR
Mindestbestellmenge: 358
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BZX55C2V7 R0 BZX55C2V7 R0 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
530+0.13 EUR
Mindestbestellmenge: 530
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1N4749A TAIWAN SEMICONDUCTOR 1N4736AT-D.PDF 1N47xxA-SERIES.pdf 1n4736at-d.pdf 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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TSM2N7002AKDCU6 RFG TAIWAN SEMICONDUCTOR TSM2N7002AKDCU6_A2111.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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SF2005GH TAIWAN SEMICONDUCTOR SF2001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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TSCDT20065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDT20065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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SMCJ30AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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MBRS1045CT TAIWAN SEMICONDUCTOR MBRS1035CT%20SERIES_M2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
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BZD27C15PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
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BZX55C47 R0G BZX55C47 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Tolerance: ±5%
Type of diode: Zener
Leakage current: 0.1µA
Zener current: 2.5mA
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
auf Bestellung 419 Stücke:
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TSM60NB150CF C0G TSM60NB150CF C0G TAIWAN SEMICONDUCTOR TSM60NB150CF_A1705.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
Produkt ist nicht verfügbar
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TSM60NE285CH C5G TAIWAN SEMICONDUCTOR pdf.php?pn=TSM60NE285CH Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 139W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Produkt ist nicht verfügbar
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SF1604PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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SF1604GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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SF1606GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
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SF1606PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
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SF1608GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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SF1608PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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SF16G TAIWAN SEMICONDUCTOR SF11G SERIES_H2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
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SS36 SS36 TAIWAN SEMICONDUCTOR SS36.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAT54W RFG
+1
 		BAT54W RFG TAIWAN SEMICONDUCTOR BAT54W SERIES_D2102.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
715+0.1 EUR
991+0.072 EUR
Mindestbestellmenge: 500
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MUR820 MUR820 TAIWAN SEMICONDUCTOR MUR820%28PbF%29.pdf MUR820%2C%20RURP820.pdf MUR820 SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
117+0.61 EUR
136+0.53 EUR
Mindestbestellmenge: 85
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MUR820H TAIWAN SEMICONDUCTOR MUR820%20SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ48A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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SMAJ43CA TAIWAN SEMICONDUCTOR SMAJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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1PGSMB5934 1PGSMB5934 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 63mA
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
161+0.44 EUR
211+0.34 EUR
Mindestbestellmenge: 143
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ES2J TAIWAN SEMICONDUCTOR ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2_1.pdf 5399_ES2J%20SMA.PDF ES2x.pdf SMAES2J000S260.pdf es2a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1N4746A TAIWAN SEMICONDUCTOR 1N4736AT-D.PDF 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 14mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
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TESDH5V0U04P2Q1 RNG TAIWAN SEMICONDUCTOR TESDH5V0U04P2Q1 _A2110.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: HDMI; USB
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
Produkt ist nicht verfügbar
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ABS6 RGG ABS6 RGG TAIWAN SEMICONDUCTOR ABS2_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Case: ABS
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.76 EUR
Mindestbestellmenge: 15
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KBU802G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBU803G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBU804G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBU805G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBU807G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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BZX55C22 R0G BZX55C22 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
285+0.26 EUR
Mindestbestellmenge: 285
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KBU1004G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SK84C SK84C00000S040.pdf SK82C SERIES_L2102.pdf
SK84C
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
136+0.53 EUR
175+0.41 EUR
500+0.33 EUR
Mindestbestellmenge: 112
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SMBJ28CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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SMBJ28CAH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Produkt ist nicht verfügbar
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1.5KE400CA 1.5KExx_SER.pdf
1.5KE400CA
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
104+0.69 EUR
122+0.59 EUR
Mindestbestellmenge: 85
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UG1004GH UG1004G SERIES_B2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
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SFA1004GH SFA1001G%20SERIES_K2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
Produkt ist nicht verfügbar
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SFS1004GH SFS1001GH SERIES_A2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 35ns; D2PAK; Ufmax: 975mV
Case: D2PAK
Application: automotive industry
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.975V
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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UGF1004GAH UGF1004GA SERIES_C2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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UGF1004GH UGF1004G SERIES_F2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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HERF1004GH HERF1001G SERIES_I2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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SFAF1004GH SFAF1001G SERIES_H2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
Produkt ist nicht verfügbar
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BZX55C33 R0G
BZX55C33 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.3 EUR
Mindestbestellmenge: 240
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BZX55C3V6 R0G
BZX55C3V6 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
auf Bestellung 1648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
538+0.13 EUR
834+0.086 EUR
1132+0.063 EUR
1489+0.048 EUR
1648+0.043 EUR
Mindestbestellmenge: 385
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BZX55C36 R0G
BZX55C36 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
220+0.33 EUR
Mindestbestellmenge: 220
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BZX55C39 R0G
BZX55C39 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
940+0.076 EUR
Mindestbestellmenge: 940
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BZX55C30 R0G
BZX55C30 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Kind of package: tape
Zener current: 5mA
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ58A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SS23M SS22M SERIES_M2103.pdf
SS23M
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
432+0.17 EUR
569+0.13 EUR
633+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 358
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SMBJ58A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ58AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ36CAH SMBJH.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Produkt ist nicht verfügbar
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SMBJ33CAH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RMB4S pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85BC31995A60D6&compId=RMB2S_ser.pdf?ci_sign=01ba02c3ea6cdad1633d21ff914fcbf48690bdc3
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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BZX55C2V7 R0G
BZX55C2V7 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 584 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
496+0.14 EUR
584+0.12 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C2V7 R0 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3
BZX55C2V7 R0
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
530+0.13 EUR
Mindestbestellmenge: 530
Im Einkaufswagen  Stück im Wert von  UAH
1N4749A 1N4736AT-D.PDF 1N47xxA-SERIES.pdf 1n4736at-d.pdf 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
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TSM2N7002AKDCU6 RFG TSM2N7002AKDCU6_A2111.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SF2005GH SF2001G SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Produkt ist nicht verfügbar
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TSCDT20065G1 pdf.php?pn=TSCDT20065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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SMCJ30AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBRS1045CT MBRS1035CT%20SERIES_M2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Produkt ist nicht verfügbar
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BZD27C15PW BZD27C11PW SERIES_D2203.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX55C47 R0G
BZX55C47 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Tolerance: ±5%
Type of diode: Zener
Leakage current: 0.1µA
Zener current: 2.5mA
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TSM60NB150CF C0G TSM60NB150CF_A1705.pdf
TSM60NB150CF C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
Produkt ist nicht verfügbar
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TSM60NE285CH C5G pdf.php?pn=TSM60NE285CH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 139W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Produkt ist nicht verfügbar
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SF1604PTH SF1601PT SERIES_G2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF1604GH SF1601G SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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SF1606GH SF1601G SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF1606PTH SF1601PT SERIES_G2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF1608GH SF1601G SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF1608PTH SF1601PT SERIES_G2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF16G SF11G SERIES_H2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
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SS36 SS36.pdf
SS36
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAT54W RFG BAT54W SERIES_D2102.pdf
BAT54W RFG
+1
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
715+0.1 EUR
991+0.072 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MUR820 MUR820%28PbF%29.pdf MUR820%2C%20RURP820.pdf MUR820 SERIES_K2103.pdf
MUR820
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
117+0.61 EUR
136+0.53 EUR
Mindestbestellmenge: 85
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MUR820H MUR820%20SERIES_K2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ48A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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SMAJ43CA SMAJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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1PGSMB5934
1PGSMB5934
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 63mA
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
161+0.44 EUR
211+0.34 EUR
Mindestbestellmenge: 143
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ES2J ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2_1.pdf 5399_ES2J%20SMA.PDF ES2x.pdf SMAES2J000S260.pdf es2a.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1N4746A 1N4736AT-D.PDF 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 14mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
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TESDH5V0U04P2Q1 RNG TESDH5V0U04P2Q1 _A2110.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: HDMI; USB
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
Produkt ist nicht verfügbar
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ABS6 RGG ABS2_ser.pdf
ABS6 RGG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Case: ABS
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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KBU802G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBU803G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBU804G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBU805G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBU807G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BZX55C22 R0G
BZX55C22 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
285+0.26 EUR
Mindestbestellmenge: 285
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