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TSF40H200C C0G TSF40H200C C0G TAIWAN SEMICONDUCTOR TSF40H100C%20SERIES_B14.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM025NB04CR RLG TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM025NB04LCR RLG TAIWAN SEMICONDUCTOR TSM025NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM033NB04CR RLG TAIWAN SEMICONDUCTOR TSM033NB04CR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR TSM033NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM042N03CS RLG TSM042N03CS RLG TAIWAN SEMICONDUCTOR TSM042N03CS-RLG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Case: SOP8
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Power dissipation: 7W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.76 EUR
22+ 3.25 EUR
60+ 1.19 EUR
Mindestbestellmenge: 19
TSM045NB06CR RLG TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM048NB06LCR RLG TSM048NB06LCR RLG TAIWAN SEMICONDUCTOR TSM048NB06LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
5+ 14.3 EUR
8+ 8.94 EUR
21+ 3.4 EUR
1000+ 2.04 EUR
Mindestbestellmenge: 4
TSM051N04LCP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM05N03CW RPG TSM05N03CW RPG TAIWAN SEMICONDUCTOR pdf.php?pn=TSM05N03CW Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.12 EUR
93+ 0.78 EUR
122+ 0.59 EUR
133+ 0.54 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 65
TSM060N03CP ROG TSM060N03CP ROG TAIWAN SEMICONDUCTOR TSM060N03CP_B1807.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 51A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 11.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.37 EUR
65+ 1.1 EUR
500+ 0.64 EUR
Mindestbestellmenge: 52
TSM070NB04CR RLG TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM070NB04LCR RLG TAIWAN SEMICONDUCTOR TSM070NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM085P03CS RLG TSM085P03CS RLG TAIWAN SEMICONDUCTOR pdf.php?pn=TSM085P03CS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM089N08LCR RLG TAIWAN SEMICONDUCTOR TSM089N08LCR_A1608.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM090N03CP ROG TAIWAN SEMICONDUCTOR TSM090N03CP_B1807.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM100N06CZ C0G TSM100N06CZ C0G TAIWAN SEMICONDUCTOR TSM100N06.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM10N80CI C0G TSM10N80CI C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM10N80CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM10NC60CF C0G TSM10NC60CF C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 33nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM10NC65CF C0G TSM10NC65CF C0G TAIWAN SEMICONDUCTOR TSM10NC65CF_A1605.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 900mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM110NB04CR RLG TAIWAN SEMICONDUCTOR pdf.php?pn=TSM110NB04CR TSM110NB04CR-RLG SMD N channel transistors
Produkt ist nicht verfügbar
TSM110NB04DCR RLG TAIWAN SEMICONDUCTOR TSM110NB04DCR-RLG Multi channel transistors
Produkt ist nicht verfügbar
TSM110NB04LCR RLG TAIWAN SEMICONDUCTOR TSM110NB04LCR_B1804.pdf TSM110NB04LCR-RLG SMD N channel transistors
Produkt ist nicht verfügbar
TSM120N06LCR RLG TAIWAN SEMICONDUCTOR TSM120N06LCR_A1610.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM120N06LCS RLG TSM120N06LCS RLG TAIWAN SEMICONDUCTOR TSM120N06LCS_C1710.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM126CX RFG TSM126CX RFG TAIWAN SEMICONDUCTOR TSM126_A14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM130NB06CR RLG TAIWAN SEMICONDUCTOR TSM130NB06CR_B1804.pdf TSM130NB06CR-RLG SMD N channel transistors
Produkt ist nicht verfügbar
TSM130NB06LCR RLG TAIWAN SEMICONDUCTOR TSM130NB06LCR_B1804.pdf TSM130NB06LCR-RLG SMD N channel transistors
Produkt ist nicht verfügbar
TSM150NB04CR RLG TAIWAN SEMICONDUCTOR TSM150NB04CR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM150NB04DCR RLG TAIWAN SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8A
Power dissipation: 8W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM150NB04LCR RLG TAIWAN SEMICONDUCTOR TSM150NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM160P02CS RLG TSM160P02CS RLG TAIWAN SEMICONDUCTOR pdf.php?pn=TSM160P02CS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM170N06CH X0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM180P03CS RLG TSM180P03CS RLG TAIWAN SEMICONDUCTOR pdf.php?pn=TSM180P03CS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM190N08CZ C0G TAIWAN SEMICONDUCTOR TSM190N08_B15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM1NB60CH C5G TAIWAN SEMICONDUCTOR TSM1NB60CH_A2308.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM1NB60CP ROG TSM1NB60CP ROG TAIWAN SEMICONDUCTOR TSM1NB60CP_A2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM1NB60CW RPG TAIWAN SEMICONDUCTOR TSM1NB60CW_A2206.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM210N02CX RFG TSM210N02CX RFG TAIWAN SEMICONDUCTOR TSM210N02CX_B1811.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Mounting: SMD
Gate charge: 5.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±10V
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 4.2A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM220NB06CR RLG TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM220NB06LCR RLG TAIWAN SEMICONDUCTOR TSM220NB06LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2301ACX RFG TSM2301ACX RFG TAIWAN SEMICONDUCTOR TSM2301A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 576 Stücke:
Lieferzeit 7-14 Tag (e)
225+0.32 EUR
247+ 0.29 EUR
309+ 0.23 EUR
327+ 0.22 EUR
3000+ 0.21 EUR
Mindestbestellmenge: 225
TSM2302CX RFG TSM2302CX RFG TAIWAN SEMICONDUCTOR TSM2302CX.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Mounting: SMD
Gate charge: 7.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.3W
Type of transistor: N-MOSFET
On-state resistance: 65mΩ
Drain current: 3.2A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2139 Stücke:
Lieferzeit 7-14 Tag (e)
225+0.32 EUR
247+ 0.29 EUR
313+ 0.23 EUR
332+ 0.22 EUR
3000+ 0.21 EUR
Mindestbestellmenge: 225
TSM2305CX RFG TSM2305CX RFG TAIWAN SEMICONDUCTOR Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2306CX RFG TSM2306CX RFG TAIWAN SEMICONDUCTOR TSM2306_B15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.76 EUR
25+ 2.86 EUR
44+ 1.63 EUR
121+ 0.59 EUR
Mindestbestellmenge: 19
TSM2307CX RFG TSM2307CX RFG TAIWAN SEMICONDUCTOR TSM2307CX_D15.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2308CX RFG TSM2308CX RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 3.99nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2309CX RFG TSM2309CX RFG TAIWAN SEMICONDUCTOR TSM2309.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)
117+0.61 EUR
147+ 0.49 EUR
182+ 0.39 EUR
275+ 0.26 EUR
291+ 0.25 EUR
9000+ 0.24 EUR
Mindestbestellmenge: 117
TSM230N06CP ROG TAIWAN SEMICONDUCTOR TSM230N06_D1802.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; 53W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 53W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2312CX RFG TSM2312CX RFG TAIWAN SEMICONDUCTOR TSM2312_E15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Mounting: SMD
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.48W
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2314CX RFG TSM2314CX RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Mounting: SMD
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 0.8W
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
115+ 0.63 EUR
151+ 0.47 EUR
191+ 0.37 EUR
203+ 0.35 EUR
Mindestbestellmenge: 76
TSM2318CX RFG TSM2318CX RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.9A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2323CX RFG TSM2323CX RFG TAIWAN SEMICONDUCTOR TSM2323_F15.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2328CX RFG TSM2328CX RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.38W
Polarisation: unipolar
Gate charge: 11.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM240N03CX RFG TSM240N03CX RFG TAIWAN SEMICONDUCTOR TSM240N03CX_B1811.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 441 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
116+ 0.62 EUR
166+ 0.43 EUR
235+ 0.3 EUR
249+ 0.29 EUR
Mindestbestellmenge: 76
TSM250N02CX RFG TSM250N02CX RFG TAIWAN SEMICONDUCTOR TSM250N02CX_B1811.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM250NB06DCR RLG TAIWAN SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7A; 9.6W; PDFN56
Case: PDFN56
Mounting: SMD
Power dissipation: 9.6W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 7A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM260P02CX RFG TSM260P02CX RFG TAIWAN SEMICONDUCTOR TSM260P02CX_A2312.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM280NB06LCR RLG TAIWAN SEMICONDUCTOR TSM280NB06LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSF40H200C C0G TSF40H100C%20SERIES_B14.pdf
TSF40H200C C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM025NB04CR RLG TSMxxxNB0x_Newsletter.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM033NB04CR RLG TSM033NB04CR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM042N03CS RLG TSM042N03CS-RLG.pdf
TSM042N03CS RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Case: SOP8
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Power dissipation: 7W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.76 EUR
22+ 3.25 EUR
60+ 1.19 EUR
Mindestbestellmenge: 19
TSM045NB06CR RLG TSMxxxNB0x_Newsletter.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM048NB06LCR RLG TSM048NB06LCR_B1804.pdf
TSM048NB06LCR RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
5+ 14.3 EUR
8+ 8.94 EUR
21+ 3.4 EUR
1000+ 2.04 EUR
Mindestbestellmenge: 4
TSM051N04LCP ROG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM05N03CW RPG pdf.php?pn=TSM05N03CW
TSM05N03CW RPG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.12 EUR
93+ 0.78 EUR
122+ 0.59 EUR
133+ 0.54 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 65
TSM060N03CP ROG TSM060N03CP_B1807.pdf
TSM060N03CP ROG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 51A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 11.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.37 EUR
65+ 1.1 EUR
500+ 0.64 EUR
Mindestbestellmenge: 52
TSM070NB04CR RLG TSMxxxNB0x_Newsletter.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM070NB04LCR RLG TSM070NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM085P03CS RLG pdf.php?pn=TSM085P03CS
TSM085P03CS RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM089N08LCR RLG TSM089N08LCR_A1608.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM090N03CP ROG TSM090N03CP_B1807.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM100N06CZ C0G TSM100N06.pdf
TSM100N06CZ C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM10N80CI C0G
TSM10N80CI C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM10N80CZ C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM10NC60CF C0G
TSM10NC60CF C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 33nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM10NC65CF C0G TSM10NC65CF_A1605.pdf
TSM10NC65CF C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 900mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM110NB04CR RLG pdf.php?pn=TSM110NB04CR
Hersteller: TAIWAN SEMICONDUCTOR
TSM110NB04CR-RLG SMD N channel transistors
Produkt ist nicht verfügbar
TSM110NB04DCR RLG
Hersteller: TAIWAN SEMICONDUCTOR
TSM110NB04DCR-RLG Multi channel transistors
Produkt ist nicht verfügbar
TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
TSM110NB04LCR-RLG SMD N channel transistors
Produkt ist nicht verfügbar
TSM120N06LCR RLG TSM120N06LCR_A1610.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM120N06LCS RLG TSM120N06LCS_C1710.pdf
TSM120N06LCS RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM126CX RFG TSM126_A14.pdf
TSM126CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM130NB06CR RLG TSM130NB06CR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
TSM130NB06CR-RLG SMD N channel transistors
Produkt ist nicht verfügbar
TSM130NB06LCR RLG TSM130NB06LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
TSM130NB06LCR-RLG SMD N channel transistors
Produkt ist nicht verfügbar
TSM150NB04CR RLG TSM150NB04CR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM150NB04DCR RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8A
Power dissipation: 8W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM150NB04LCR RLG TSM150NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM160P02CS RLG pdf.php?pn=TSM160P02CS
TSM160P02CS RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM170N06CH X0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM180P03CS RLG pdf.php?pn=TSM180P03CS
TSM180P03CS RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM190N08CZ C0G TSM190N08_B15.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM1NB60CH C5G TSM1NB60CH_A2308.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM1NB60CP ROG TSM1NB60CP_A2309.pdf
TSM1NB60CP ROG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM1NB60CW RPG TSM1NB60CW_A2206.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM210N02CX RFG TSM210N02CX_B1811.pdf
TSM210N02CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Mounting: SMD
Gate charge: 5.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±10V
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 4.2A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM220NB06CR RLG TSMxxxNB0x_Newsletter.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM220NB06LCR RLG TSM220NB06LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2301ACX RFG TSM2301A.pdf
TSM2301ACX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 576 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
225+0.32 EUR
247+ 0.29 EUR
309+ 0.23 EUR
327+ 0.22 EUR
3000+ 0.21 EUR
Mindestbestellmenge: 225
TSM2302CX RFG TSM2302CX.pdf
TSM2302CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Mounting: SMD
Gate charge: 7.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.3W
Type of transistor: N-MOSFET
On-state resistance: 65mΩ
Drain current: 3.2A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2139 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
225+0.32 EUR
247+ 0.29 EUR
313+ 0.23 EUR
332+ 0.22 EUR
3000+ 0.21 EUR
Mindestbestellmenge: 225
TSM2305CX RFG
TSM2305CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2306CX RFG TSM2306_B15.pdf
TSM2306CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.76 EUR
25+ 2.86 EUR
44+ 1.63 EUR
121+ 0.59 EUR
Mindestbestellmenge: 19
TSM2307CX RFG TSM2307CX_D15.pdf
TSM2307CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2308CX RFG
TSM2308CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 3.99nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2309CX RFG TSM2309.pdf
TSM2309CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
117+0.61 EUR
147+ 0.49 EUR
182+ 0.39 EUR
275+ 0.26 EUR
291+ 0.25 EUR
9000+ 0.24 EUR
Mindestbestellmenge: 117
TSM230N06CP ROG TSM230N06_D1802.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; 53W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 53W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2312CX RFG TSM2312_E15.pdf
TSM2312CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Mounting: SMD
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.48W
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2314CX RFG
TSM2314CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Mounting: SMD
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 0.8W
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
115+ 0.63 EUR
151+ 0.47 EUR
191+ 0.37 EUR
203+ 0.35 EUR
Mindestbestellmenge: 76
TSM2318CX RFG
TSM2318CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.9A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2323CX RFG TSM2323_F15.pdf
TSM2323CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2328CX RFG
TSM2328CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.38W
Polarisation: unipolar
Gate charge: 11.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM240N03CX RFG TSM240N03CX_B1811.pdf
TSM240N03CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 441 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
116+ 0.62 EUR
166+ 0.43 EUR
235+ 0.3 EUR
249+ 0.29 EUR
Mindestbestellmenge: 76
TSM250N02CX RFG TSM250N02CX_B1811.pdf
TSM250N02CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM250NB06DCR RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7A; 9.6W; PDFN56
Case: PDFN56
Mounting: SMD
Power dissipation: 9.6W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 7A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM260P02CX RFG TSM260P02CX_A2312.pdf
TSM260P02CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM280NB06LCR RLG TSM280NB06LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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