Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (50070) > Seite 820 nach 835
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| SMCJ36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BAS40-04 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 200mA; 5ns; 200mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Max. forward voltage: 1V Leakage current: 0.2mA Max. forward impulse current: 0.6A Power dissipation: 0.2W Reverse recovery time: 5ns |
auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMA33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: unidirectional Kind of package: reel; tape Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Leakage current: 1µA Breakdown voltage: 33V Max. forward impulse current: 9A |
auf Bestellung 702 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1620CT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Reverse recovery time: 25ns Features of semiconductor devices: ultrafast switching Max. load current: 16A |
Produkt ist nicht verfügbar |
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MUR1620CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Reverse recovery time: 25ns Features of semiconductor devices: ultrafast switching Application: automotive industry Max. load current: 16A |
Produkt ist nicht verfügbar |
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SMBJ18CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 21.5A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZX55C3V6 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: THT Tolerance: ±5% Case: DO35 Semiconductor structure: single diode Kind of package: tape |
auf Bestellung 1638 Stücke: Lieferzeit 14-21 Tag (e) |
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TS34063CS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz Mounting: SMD Input voltage: 3...40V DC Output current: 1.5A Type of integrated circuit: PMIC Operating temperature: -40...85°C Kind of package: reel; tape Case: SOP8 Kind of integrated circuit: DC/DC converter Number of channels: 1 Frequency: 24...100kHz Topology: buck |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2D | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.95V Kind of package: reel; tape |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| ES2DAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ES2DALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| ES2DFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ES2DFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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ES2DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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ES2DVH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.9V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BC847B RFG | TAIWAN SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar Type of transistor: NPN Polarisation: bipolar Mounting: SMD |
auf Bestellung 1165 Stücke: Lieferzeit 14-21 Tag (e) |
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BZS55C3V3 RAG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Semiconductor structure: single diode Case - mm: 3216 Case - inch: 1206 |
auf Bestellung 865 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSUP12122 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 0.1kV Load current: 12A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BZT55C27 L1 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Kind of package: reel; tape Case: MiniMELF quadro Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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GBU1505 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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| GBU1506 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 15A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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| GBU1507 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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GBU15L05 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.75V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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GBU806 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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KBU806G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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SS115 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 5700 Stücke: Lieferzeit 14-21 Tag (e) |
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SS115L R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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SS115L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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SS115H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.5V Application: automotive industry Max. off-state voltage: 150V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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| SS115LWH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 150V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123W Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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| SS115HM2G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA Max. forward impulse current: 40A Max. forward voltage: 0.95V Leakage current: 0.1mA Case: SMA Type of diode: Schottky rectifying |
auf Bestellung 217500 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C5V1 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 810 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR160S | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
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MUR160SH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 50ns Application: automotive industry |
Produkt ist nicht verfügbar |
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| SF38G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward impulse current: 125A Case: DO201AD Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
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| SF38G-A | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO201AD Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
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| S1KLSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape Mounting: SMD Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 0.8kV Load current: 1.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Type of diode: rectifying |
Produkt ist nicht verfügbar |
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| RS1KLSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Mounting: SMD Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 0.8kV Load current: 1.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Type of diode: rectifying Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
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TS431ACX RFG | TAIWAN SEMICONDUCTOR |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A |
auf Bestellung 632 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM260P02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23 Kind of channel: enhancement Case: SOT23 Type of transistor: P-MOSFET Kind of package: tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Gate charge: 19.5nC On-state resistance: 26mΩ Power dissipation: 1.56W Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |
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| TSG65N190CR RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN56 Gate-source voltage: -10...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| TSG65N068CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 60A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.7nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| TSG65N195CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| TSG65N110CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 35A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 4nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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MBR20H200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Case: TO220AB Max. forward voltage: 0.97V |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| GBPC2508W | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: in-tray |
Produkt ist nicht verfügbar |
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| GBPC2508 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray |
Produkt ist nicht verfügbar |
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KBU605G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 0.6kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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| KBU603G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 200V Electrical mounting: THT Load current: 6A Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| KBU604G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| KBU606G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| KBU607G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 1kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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TS34119CS RLG | TAIWAN SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 2...16V DC Amplifier class: AB Case: SOP8 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TSD10L200CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A Type of diode: Schottky rectifying Mounting: SMD Load current: 10A Case: D2PAK Max. forward voltage: 0.98V Max. forward impulse current: 100A Max. off-state voltage: 200V Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSF20L200C C0G | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20A; ITO220AB; 980mV; Ir: 100uA Type of diode: Schottky rectifying Mounting: THT Load current: 20A Case: ITO220AB Max. forward voltage: 0.98V Max. forward impulse current: 100A Leakage current: 0.1mA |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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6A60G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V Case: R6 Mounting: THT Kind of package: reel; tape Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Capacitance: 60pF Type of diode: rectifying Max. forward impulse current: 250A Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS14M RSG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Max. forward voltage: 0.55V Leakage current: 50µA Max. forward impulse current: 25A |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMCJ33CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SMCJ33CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SMCJ36AH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS40-04 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 200mA; 5ns; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward voltage: 1V
Leakage current: 0.2mA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 200mA; 5ns; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward voltage: 1V
Leakage current: 0.2mA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Reverse recovery time: 5ns
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.042 EUR |
| P4SMA33A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Leakage current: 1µA
Breakdown voltage: 33V
Max. forward impulse current: 9A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Leakage current: 1µA
Breakdown voltage: 33V
Max. forward impulse current: 9A
auf Bestellung 702 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 167+ | 0.51 EUR |
| 257+ | 0.33 EUR |
| 432+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| MUR1620CT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR1620CTH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ18CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55C3V6 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 1638 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 385+ | 0.23 EUR |
| 538+ | 0.15 EUR |
| 834+ | 0.1 EUR |
| 1132+ | 0.075 EUR |
| 1489+ | 0.057 EUR |
| 1638+ | 0.052 EUR |
| TS34063CS RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz
Mounting: SMD
Input voltage: 3...40V DC
Output current: 1.5A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 24...100kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz
Mounting: SMD
Input voltage: 3...40V DC
Output current: 1.5A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 24...100kHz
Topology: buck
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 99+ | 0.87 EUR |
| 143+ | 0.6 EUR |
| 165+ | 0.51 EUR |
| 174+ | 0.49 EUR |
| ES2D |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 139+ | 0.61 EUR |
| 180+ | 0.48 EUR |
| 208+ | 0.4 EUR |
| 317+ | 0.27 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| ES2DAH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2DAL |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2DALH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2DFS |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2DFSH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2DH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2DVH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847B RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
auf Bestellung 1165 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1165+ | 0.073 EUR |
| BZS55C3V3 RAG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 298+ | 0.29 EUR |
| 453+ | 0.19 EUR |
| 594+ | 0.14 EUR |
| 808+ | 0.11 EUR |
| 865+ | 0.099 EUR |
| TSUP12122 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BZT55C27 L1 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| GBU1505 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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| GBU1506 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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| GBU1507 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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| GBU15L05 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GBU806 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.17 EUR |
| 47+ | 1.81 EUR |
| KBU806G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.46 EUR |
| SS115 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 5700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 0.44 EUR |
| 277+ | 0.31 EUR |
| 396+ | 0.21 EUR |
| 469+ | 0.18 EUR |
| 595+ | 0.14 EUR |
| 722+ | 0.12 EUR |
| 1000+ | 0.095 EUR |
| 2000+ | 0.076 EUR |
| 5000+ | 0.054 EUR |
| SS115L R2 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.13 EUR |
| SS115L |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.68 EUR |
| 206+ | 0.42 EUR |
| 319+ | 0.26 EUR |
| 376+ | 0.23 EUR |
| SS115H |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| SS115LWH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| SS115HM2G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
auf Bestellung 217500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22500+ | 0.033 EUR |
| BZT52C5V1 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 705+ | 0.12 EUR |
| 810+ | 0.11 EUR |
| MUR160S |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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| MUR160SH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
Produkt ist nicht verfügbar
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| SF38G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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| SF38G-A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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| S1KLSH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Produkt ist nicht verfügbar
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| RS1KLSH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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| TS431ACX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 632 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 295+ | 0.29 EUR |
| 341+ | 0.25 EUR |
| 400+ | 0.21 EUR |
| TSM260P02CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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| TSG65N190CR RVG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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| TSG65N068CE RVG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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| TSG65N195CE RVG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| TSG65N110CE RVG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| MBR20H200CT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| GBPC2508W |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| GBPC2508 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| KBU605G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.62 EUR |
| 35+ | 2.43 EUR |
| KBU603G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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| KBU604G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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| KBU606G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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| KBU607G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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| TS34119CS RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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| TSD10L200CW MNG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 10A
Case: D2PAK
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 10A
Case: D2PAK
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
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| TSF20L200C C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20A; ITO220AB; 980mV; Ir: 100uA
Type of diode: Schottky rectifying
Mounting: THT
Load current: 20A
Case: ITO220AB
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20A; ITO220AB; 980mV; Ir: 100uA
Type of diode: Schottky rectifying
Mounting: THT
Load current: 20A
Case: ITO220AB
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Leakage current: 0.1mA
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2850+ | 0.24 EUR |
| 6A60G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 148+ | 0.58 EUR |
| 166+ | 0.51 EUR |
| 178+ | 0.48 EUR |
| 187+ | 0.45 EUR |
| 201+ | 0.43 EUR |
| SS14M RSG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 25A
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9497+ | 0.071 EUR |
| SMCJ33CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SMCJ33CAH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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