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SMCJ36AH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS40-04 RFG BAS40-04 RFG TAIWAN SEMICONDUCTOR BAS40 SERIES_H2001.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 200mA; 5ns; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward voltage: 1V
Leakage current: 0.2mA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Reverse recovery time: 5ns
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.042 EUR
Mindestbestellmenge: 3000 Stücke
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P4SMA33A P4SMA33A TAIWAN SEMICONDUCTOR P4SMA SERIES_S2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Leakage current: 1µA
Breakdown voltage: 33V
Max. forward impulse current: 9A
auf Bestellung 702 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.51 EUR
257+0.33 EUR
432+0.2 EUR
500+0.17 EUR
Mindestbestellmenge: 167 Stücke
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MUR1620CT MUR1620CT TAIWAN SEMICONDUCTOR MUR1620CT-MUR1620FCT.pdf mur1620ct.pdf MUR1620CT_Rev08.pdf MUR1620CT%2C%20RURP820CC.pdf MUR1620CT SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
Produkt ist nicht verfügbar
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MUR1620CTH MUR1620CTH TAIWAN SEMICONDUCTOR MUR1620CT SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
Produkt ist nicht verfügbar
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SMBJ18CA SMBJ18CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX55C3V6 R0G BZX55C3V6 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 1638 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.23 EUR
538+0.15 EUR
834+0.1 EUR
1132+0.075 EUR
1489+0.057 EUR
1638+0.052 EUR
Mindestbestellmenge: 385 Stücke
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TS34063CS RLG TS34063CS RLG TAIWAN SEMICONDUCTOR TS34063CS-RLG.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz
Mounting: SMD
Input voltage: 3...40V DC
Output current: 1.5A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 24...100kHz
Topology: buck
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.87 EUR
143+0.6 EUR
165+0.51 EUR
174+0.49 EUR
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ES2D ES2D TAIWAN SEMICONDUCTOR ES2(A-J)%20N0160%20REV.D.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.61 EUR
180+0.48 EUR
208+0.4 EUR
317+0.27 EUR
500+0.21 EUR
1000+0.19 EUR
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ES2DAH ES2DAH TAIWAN SEMICONDUCTOR ES2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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ES2DAL TAIWAN SEMICONDUCTOR ES2BAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ES2DALH TAIWAN SEMICONDUCTOR ES2BALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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ES2DFS TAIWAN SEMICONDUCTOR ES2BFS SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES2DFSH TAIWAN SEMICONDUCTOR ES2BFSH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DH ES2DH TAIWAN SEMICONDUCTOR ES2AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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ES2DVH ES2DVH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BC847B RFG BC847B RFG TAIWAN SEMICONDUCTOR BC846A Series_I2001.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
auf Bestellung 1165 Stücke:
Lieferzeit 14-21 Tag (e)
1165+0.073 EUR
Mindestbestellmenge: 1165 Stücke
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BZS55C3V3 RAG BZS55C3V3 RAG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
298+0.29 EUR
453+0.19 EUR
594+0.14 EUR
808+0.11 EUR
865+0.099 EUR
Mindestbestellmenge: 200 Stücke
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TSUP12122 TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT55C27 L1 BZT55C27 L1 TAIWAN SEMICONDUCTOR BZT55C-TAI-DTE.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBU1505 GBU1505 TAIWAN SEMICONDUCTOR GBU1507_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1506 TAIWAN SEMICONDUCTOR GBU1507_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1507 TAIWAN SEMICONDUCTOR GBU1507_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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GBU15L05 GBU15L05 TAIWAN SEMICONDUCTOR GBU15L05.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GBU806 GBU806 TAIWAN SEMICONDUCTOR GBU807_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
40+2.17 EUR
47+1.81 EUR
Mindestbestellmenge: 40 Stücke
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KBU806G KBU806G TAIWAN SEMICONDUCTOR KBU807G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+9.46 EUR
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SS115 SS115 TAIWAN SEMICONDUCTOR SS12 SERIES_R2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 5700 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.44 EUR
277+0.31 EUR
396+0.21 EUR
469+0.18 EUR
595+0.14 EUR
722+0.12 EUR
1000+0.095 EUR
2000+0.076 EUR
5000+0.054 EUR
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SS115L R2 SS115L R2 TAIWAN SEMICONDUCTOR SS110L-R2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
40+2.13 EUR
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SS115L SS115L TAIWAN SEMICONDUCTOR SS12L SERIES_Q2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.68 EUR
206+0.42 EUR
319+0.26 EUR
376+0.23 EUR
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SS115H SS115H TAIWAN SEMICONDUCTOR SS12H SERIES_B2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS115LWH TAIWAN SEMICONDUCTOR SS14LWH SERIES_B2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS115HM2G TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
auf Bestellung 217500 Stücke:
Lieferzeit 14-21 Tag (e)
22500+0.033 EUR
Mindestbestellmenge: 22500 Stücke
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BZT52C5V1 RHG BZT52C5V1 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
705+0.12 EUR
810+0.11 EUR
Mindestbestellmenge: 455 Stücke
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MUR160S MUR160S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
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MUR160SH MUR160SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
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SF38G TAIWAN SEMICONDUCTOR SF31G SERIES_H2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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SF38G-A TAIWAN SEMICONDUCTOR SF31G-A SERIES_B2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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S1KLSH TAIWAN SEMICONDUCTOR S1DLSH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Produkt ist nicht verfügbar
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RS1KLSH TAIWAN SEMICONDUCTOR RS1JLSH SERIES_B2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
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TS431ACX RFG TS431ACX RFG TAIWAN SEMICONDUCTOR TS431ACX-RFG.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
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295+0.29 EUR
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400+0.21 EUR
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TSM260P02CX RFG TSM260P02CX RFG TAIWAN SEMICONDUCTOR TSM260P02CX_A2312.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
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TSG65N190CR RVG TAIWAN SEMICONDUCTOR TSG65N190CR_B2305.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N068CE RVG TAIWAN SEMICONDUCTOR TSG65N068CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N195CE RVG TAIWAN SEMICONDUCTOR TSG65N195CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N110CE RVG TAIWAN SEMICONDUCTOR TSG65N110CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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MBR20H200CT MBR20H200CT TAIWAN SEMICONDUCTOR MBR20H100CT SERIES_I2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
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GBPC2508W TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC2508 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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KBU605G KBU605G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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KBU603G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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KBU604G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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KBU606G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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KBU607G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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TS34119CS RLG TS34119CS RLG TAIWAN SEMICONDUCTOR TS34119.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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TSD10L200CW MNG TSD10L200CW MNG TAIWAN SEMICONDUCTOR TSD10H100CW%20SERIES_A15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 10A
Case: D2PAK
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
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TSF20L200C C0G TAIWAN SEMICONDUCTOR TSF20L100C-TSF20L200C_C2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20A; ITO220AB; 980mV; Ir: 100uA
Type of diode: Schottky rectifying
Mounting: THT
Load current: 20A
Case: ITO220AB
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Leakage current: 0.1mA
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6A60G 6A60G TAIWAN SEMICONDUCTOR 6A05G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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166+0.51 EUR
178+0.48 EUR
187+0.45 EUR
201+0.43 EUR
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SS14M RSG TAIWAN SEMICONDUCTOR SS13M SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 25A
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SMCJ33CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ33CAH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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SMCJ36AH SMCJH.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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BAS40-04 RFG BAS40 SERIES_H2001.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 200mA; 5ns; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward voltage: 1V
Leakage current: 0.2mA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Reverse recovery time: 5ns
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3000+0.042 EUR
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P4SMA33A P4SMA SERIES_S2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Leakage current: 1µA
Breakdown voltage: 33V
Max. forward impulse current: 9A
auf Bestellung 702 Stücke:
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167+0.51 EUR
257+0.33 EUR
432+0.2 EUR
500+0.17 EUR
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MUR1620CT MUR1620CT-MUR1620FCT.pdf mur1620ct.pdf MUR1620CT_Rev08.pdf MUR1620CT%2C%20RURP820CC.pdf MUR1620CT SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
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MUR1620CTH MUR1620CT SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
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SMBJ18CA SMBJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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BZX55C3V6 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 1638 Stücke:
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385+0.23 EUR
538+0.15 EUR
834+0.1 EUR
1132+0.075 EUR
1489+0.057 EUR
1638+0.052 EUR
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TS34063CS RLG TS34063CS-RLG.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz
Mounting: SMD
Input voltage: 3...40V DC
Output current: 1.5A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 24...100kHz
Topology: buck
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99+0.87 EUR
143+0.6 EUR
165+0.51 EUR
174+0.49 EUR
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ES2D ES2(A-J)%20N0160%20REV.D.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
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139+0.61 EUR
180+0.48 EUR
208+0.4 EUR
317+0.27 EUR
500+0.21 EUR
1000+0.19 EUR
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ES2DAH ES2AAH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DAL ES2BAL SERIES_D2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES2DALH ES2BALH SERIES_B2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DFS ES2BFS SERIES_D2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES2DFSH ES2BFSH SERIES_B2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DH ES2AH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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ES2DVH
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BC847B RFG BC846A Series_I2001.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
auf Bestellung 1165 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1165+0.073 EUR
Mindestbestellmenge: 1165 Stücke
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BZS55C3V3 RAG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
298+0.29 EUR
453+0.19 EUR
594+0.14 EUR
808+0.11 EUR
865+0.099 EUR
Mindestbestellmenge: 200 Stücke
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TSUP12122
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZT55C27 L1 BZT55C-TAI-DTE.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBU1505 GBU1507_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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GBU1506 GBU1507_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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GBU1507 GBU1507_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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GBU15L05 GBU15L05.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GBU806 GBU807_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
40+2.17 EUR
47+1.81 EUR
Mindestbestellmenge: 40 Stücke
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KBU806G KBU807G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.46 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS115 SS12 SERIES_R2305.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 5700 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
277+0.31 EUR
396+0.21 EUR
469+0.18 EUR
595+0.14 EUR
722+0.12 EUR
1000+0.095 EUR
2000+0.076 EUR
5000+0.054 EUR
Mindestbestellmenge: 193 Stücke
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SS115L R2 SS110L-R2.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
40+2.13 EUR
Mindestbestellmenge: 40 Stücke
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SS115L SS12L SERIES_Q2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
206+0.42 EUR
319+0.26 EUR
376+0.23 EUR
Mindestbestellmenge: 125 Stücke
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SS115H SS12H SERIES_B2305.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS115LWH SS14LWH SERIES_B2305.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS115HM2G
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
auf Bestellung 217500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22500+0.033 EUR
Mindestbestellmenge: 22500 Stücke
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BZT52C5V1 RHG BZT52C2V4 SERIES_G1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
705+0.12 EUR
810+0.11 EUR
Mindestbestellmenge: 455 Stücke
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MUR160S MUR105S SERIES_L2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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MUR160SH MUR105SH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF38G SF31G SERIES_H2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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SF38G-A SF31G-A SERIES_B2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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S1KLSH S1DLSH SERIES_A2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Produkt ist nicht verfügbar
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RS1KLSH RS1JLSH SERIES_B2304.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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TS431ACX RFG TS431ACX-RFG.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 632 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
295+0.29 EUR
341+0.25 EUR
400+0.21 EUR
Mindestbestellmenge: 200 Stücke
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TSM260P02CX RFG TSM260P02CX_A2312.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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TSG65N190CR RVG TSG65N190CR_B2305.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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TSG65N068CE RVG TSG65N068CE_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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TSG65N195CE RVG TSG65N195CE_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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TSG65N110CE RVG TSG65N110CE_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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MBR20H200CT MBR20H100CT SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+85.08 EUR
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GBPC2508W GBPC15_25_35_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Produkt ist nicht verfügbar
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GBPC2508 GBPC15_25_35_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Produkt ist nicht verfügbar
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KBU605G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
33+2.62 EUR
35+2.43 EUR
Mindestbestellmenge: 33 Stücke
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KBU603G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Produkt ist nicht verfügbar
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KBU604G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Produkt ist nicht verfügbar
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KBU606G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBU607G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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TS34119CS RLG TS34119.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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TSD10L200CW MNG TSD10H100CW%20SERIES_A15.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 10A
Case: D2PAK
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
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TSF20L200C C0G TSF20L100C-TSF20L200C_C2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20A; ITO220AB; 980mV; Ir: 100uA
Type of diode: Schottky rectifying
Mounting: THT
Load current: 20A
Case: ITO220AB
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Leakage current: 0.1mA
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2850+0.24 EUR
Mindestbestellmenge: 2850 Stücke
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6A60G 6A05G_SER.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
148+0.58 EUR
166+0.51 EUR
178+0.48 EUR
187+0.45 EUR
201+0.43 EUR
Mindestbestellmenge: 148 Stücke
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SS14M RSG SS13M SERIES_O2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 25A
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9497+0.071 EUR
Mindestbestellmenge: 9497 Stücke
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SMCJ33CA SMCJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ33CAH SMCJH.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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