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BZT55C27 L1 BZT55C27 L1 TAIWAN SEMICONDUCTOR BZT55C-TAI-DTE.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBU1505 GBU1505 TAIWAN SEMICONDUCTOR GBU1507_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1506 TAIWAN SEMICONDUCTOR GBU1507_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1507 TAIWAN SEMICONDUCTOR GBU1507_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU15L05 GBU15L05 TAIWAN SEMICONDUCTOR GBU15L05.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
Produkt ist nicht verfügbar
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GBU806 GBU806 TAIWAN SEMICONDUCTOR GBU807_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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40+2.17 EUR
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KBU806G KBU806G TAIWAN SEMICONDUCTOR KBU807G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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9+9.46 EUR
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SS115 SS115 TAIWAN SEMICONDUCTOR SS12 SERIES_R2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
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193+0.44 EUR
277+0.31 EUR
396+0.21 EUR
469+0.18 EUR
595+0.14 EUR
722+0.12 EUR
1000+0.095 EUR
2000+0.076 EUR
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SS115L R2 SS115L R2 TAIWAN SEMICONDUCTOR SS110L-R2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.9V
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
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SS115L SS115L TAIWAN SEMICONDUCTOR SS12L SERIES_Q2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.9V
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
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125+0.68 EUR
206+0.42 EUR
319+0.26 EUR
376+0.23 EUR
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SS115H SS115H TAIWAN SEMICONDUCTOR SS12H SERIES_B2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
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SS115LWH SS115LWH TAIWAN SEMICONDUCTOR SS14LWH SERIES_B2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
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SS115HM2G TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
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BZT52C5V1 RHG BZT52C5V1 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Tolerance: ±5%
auf Bestellung 809 Stücke:
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455+0.19 EUR
705+0.12 EUR
809+0.11 EUR
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MUR160S MUR160S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
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MUR160SH MUR160SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
auf Bestellung 3000 Stücke:
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139+0.61 EUR
229+0.37 EUR
360+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
3000+0.14 EUR
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SF38G TAIWAN SEMICONDUCTOR SF31G SERIES_H2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
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SF38G-A TAIWAN SEMICONDUCTOR SF31G-A SERIES_B2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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S1KLSH TAIWAN SEMICONDUCTOR S1DLSH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
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RS1KLSH TAIWAN SEMICONDUCTOR RS1JLSH SERIES_B2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
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TS431ACX RFG TS431ACX RFG TAIWAN SEMICONDUCTOR TS431ACX-RFG.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
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200+0.43 EUR
295+0.29 EUR
341+0.25 EUR
372+0.23 EUR
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TSM260P02CX RFG TSM260P02CX RFG TAIWAN SEMICONDUCTOR TSM260P02CX_A2312.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
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TSG65N190CR RVG TAIWAN SEMICONDUCTOR TSG65N190CR_B2305.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN56
On-state resistance: 0.19Ω
Mounting: SMD
Pulsed drain current: 19A
Gate charge: 2.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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TSG65N068CE RVG TAIWAN SEMICONDUCTOR TSG65N068CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 68mΩ
Mounting: SMD
Pulsed drain current: 60A
Gate charge: 6.7nC
Polarisation: unipolar
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TSG65N195CE RVG TAIWAN SEMICONDUCTOR TSG65N195CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 0.195Ω
Mounting: SMD
Pulsed drain current: 19A
Gate charge: 2.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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TSG65N110CE RVG TAIWAN SEMICONDUCTOR TSG65N110CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 0.11Ω
Mounting: SMD
Pulsed drain current: 35A
Gate charge: 4nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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MBR20H200CT MBR20H200CT TAIWAN SEMICONDUCTOR MBR20H100CT SERIES_I2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
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1+85.08 EUR
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GBPC2508W TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC2508 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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KBU605G KBU605G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: KBU
Kind of package: in-tray
Max. forward voltage: 1.1V
Version: flat
Leads: round pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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KBU603G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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KBU604G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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KBU606G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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KBU607G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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TS34119CS RLG TS34119CS RLG TAIWAN SEMICONDUCTOR TS34119.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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TSD10L200CW MNG TSD10L200CW MNG TAIWAN SEMICONDUCTOR TSD10H100CW%20SERIES_A15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
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6A60G 6A60G TAIWAN SEMICONDUCTOR 6A05G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.58 EUR
166+0.51 EUR
178+0.48 EUR
187+0.45 EUR
201+0.43 EUR
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SS14M RSG TAIWAN SEMICONDUCTOR SS13M SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 25A
auf Bestellung 18000 Stücke:
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9497+0.071 EUR
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SMCJ33CA SMCJ33CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ33CAH SMCJ33CAH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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UG6005PT TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO247AD; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO247AD
Max. load current: 60A
Reverse recovery time: 25ns
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UG6005PTH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO3P; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO3P
Max. load current: 60A
Reverse recovery time: 25ns
Application: automotive industry
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SS515FSH TAIWAN SEMICONDUCTOR SS54FSH SERIES_B2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 150V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 110A
Kind of package: reel; tape
Application: automotive industry
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BZT52B3V6 RHG BZT52B3V6 RHG TAIWAN SEMICONDUCTOR BZT52B2V4 series_F15.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
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910+0.094 EUR
1025+0.083 EUR
1060+0.081 EUR
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BZT52C3V6 RHG BZT52C3V6 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX55C30 R0G BZX55C30 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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BAV19W RHG BAV19W RHG TAIWAN SEMICONDUCTOR BAV19W SERIES_E15.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Kind of package: reel; tape
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TSM340N06CP ROG TSM340N06CP ROG TAIWAN SEMICONDUCTOR TSM340N06_D14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 40W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 40W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ5V0A SMBJ5V0A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 1270 Stücke:
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157+0.55 EUR
191+0.45 EUR
225+0.38 EUR
261+0.32 EUR
304+0.29 EUR
500+0.19 EUR
1000+0.17 EUR
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SK36A R2 SK36A R2 TAIWAN SEMICONDUCTOR SK32A SER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 6077 Stücke:
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136+0.63 EUR
186+0.45 EUR
280+0.31 EUR
334+0.25 EUR
500+0.18 EUR
1000+0.15 EUR
2000+0.13 EUR
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SK36A SK36A TAIWAN SEMICONDUCTOR SK36A%20N0104%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 214 Stücke:
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136+0.63 EUR
199+0.43 EUR
214+0.39 EUR
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SK36B SK36B TAIWAN SEMICONDUCTOR SK36B%20N0936%20REV.A.pdf SK32B-SK36B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 360 Stücke:
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157+0.55 EUR
216+0.39 EUR
250+0.35 EUR
341+0.25 EUR
360+0.24 EUR
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SK36AH SK36AH TAIWAN SEMICONDUCTOR SK32AH SERIES_B2304.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR1545CT MBR1545CT TAIWAN SEMICONDUCTOR MBR1545CT(-1)%20MBRB1545CT%20N0736%20REV.A.pdf mbr1535ct-d.pdf MBR15xxCT.pdf MBR1545CT-1560CT.pdf MBR1535CT SERIES_I2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
auf Bestellung 423 Stücke:
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112+0.76 EUR
128+0.67 EUR
136+0.63 EUR
142+0.61 EUR
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MBR1545CTH MBR1545CTH TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
auf Bestellung 150 Stücke:
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76+1.12 EUR
84+1.02 EUR
91+0.94 EUR
100+0.9 EUR
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TSM60NE084CIT C0G TAIWAN SEMICONDUCTOR pdf.php?pn=TSM60NE084CIT Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
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P6SMB200CA P6SMB200CA TAIWAN SEMICONDUCTOR tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 351 Stücke:
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200+0.43 EUR
222+0.38 EUR
252+0.33 EUR
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BYG20G BYG20G TAIWAN SEMICONDUCTOR BYG20D SERIES_F2102.pdf byg20d.pdf byg20d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
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BYG20GH BYG20GH TAIWAN SEMICONDUCTOR BYG20DH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
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TS9011SCY RFG TS9011SCY RFG TAIWAN SEMICONDUCTOR TS9011-DTE.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 12V
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BZT55C27 L1 BZT55C-TAI-DTE.pdf
BZT55C27 L1
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBU1505 GBU1507_ser.pdf
GBU1505
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1506 GBU1507_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1507 GBU1507_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU15L05 GBU15L05.pdf
GBU15L05
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
Produkt ist nicht verfügbar
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GBU806 GBU807_ser.pdf
GBU806
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
auf Bestellung 47 Stücke:
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40+2.17 EUR
47+1.81 EUR
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KBU806G KBU807G_ser.pdf
KBU806G
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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9+9.46 EUR
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SS115 SS12 SERIES_R2305.pdf
SS115
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
auf Bestellung 3430 Stücke:
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193+0.44 EUR
277+0.31 EUR
396+0.21 EUR
469+0.18 EUR
595+0.14 EUR
722+0.12 EUR
1000+0.095 EUR
2000+0.076 EUR
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SS115L R2 SS110L-R2.pdf
SS115L R2
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.9V
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
auf Bestellung 40 Stücke:
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AnzahlPrivatkunde
40+2.13 EUR
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SS115L SS12L SERIES_Q2103.pdf
SS115L
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.9V
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
auf Bestellung 480 Stücke:
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125+0.68 EUR
206+0.42 EUR
319+0.26 EUR
376+0.23 EUR
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SS115H SS12H SERIES_B2305.pdf
SS115H
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
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SS115LWH SS14LWH SERIES_B2305.pdf
SS115LWH
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS115HM2G
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
auf Bestellung 217500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22500+0.033 EUR
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BZT52C5V1 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C5V1 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Tolerance: ±5%
auf Bestellung 809 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
705+0.12 EUR
809+0.11 EUR
Mindestbestellmenge: 455 Stücke
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MUR160S MUR105S SERIES_L2102.pdf
MUR160S
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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MUR160SH MUR105SH SERIES_A2102.pdf
MUR160SH
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
229+0.37 EUR
360+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
3000+0.14 EUR
Mindestbestellmenge: 139 Stücke
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SF38G SF31G SERIES_H2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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SF38G-A SF31G-A SERIES_B2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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S1KLSH S1DLSH SERIES_A2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Produkt ist nicht verfügbar
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RS1KLSH RS1JLSH SERIES_B2304.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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TS431ACX RFG TS431ACX-RFG.pdf
TS431ACX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
295+0.29 EUR
341+0.25 EUR
372+0.23 EUR
Mindestbestellmenge: 200 Stücke
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TSM260P02CX RFG TSM260P02CX_A2312.pdf
TSM260P02CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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TSG65N190CR RVG TSG65N190CR_B2305.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN56
On-state resistance: 0.19Ω
Mounting: SMD
Pulsed drain current: 19A
Gate charge: 2.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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TSG65N068CE RVG TSG65N068CE_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 68mΩ
Mounting: SMD
Pulsed drain current: 60A
Gate charge: 6.7nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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TSG65N195CE RVG TSG65N195CE_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 0.195Ω
Mounting: SMD
Pulsed drain current: 19A
Gate charge: 2.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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TSG65N110CE RVG TSG65N110CE_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 0.11Ω
Mounting: SMD
Pulsed drain current: 35A
Gate charge: 4nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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MBR20H200CT MBR20H100CT SERIES_I2104.pdf
MBR20H200CT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+85.08 EUR
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GBPC2508W GBPC15_25_35_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Produkt ist nicht verfügbar
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GBPC2508 GBPC15_25_35_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Produkt ist nicht verfügbar
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KBU605G KBU607G_ser.pdf
KBU605G
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: KBU
Kind of package: in-tray
Max. forward voltage: 1.1V
Version: flat
Leads: round pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
32+2.65 EUR
Mindestbestellmenge: 32 Stücke
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KBU603G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Produkt ist nicht verfügbar
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KBU604G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Produkt ist nicht verfügbar
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KBU606G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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KBU607G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Produkt ist nicht verfügbar
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TS34119CS RLG TS34119.pdf
TS34119CS RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TSD10L200CW MNG TSD10H100CW%20SERIES_A15.pdf
TSD10L200CW MNG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
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6A60G 6A05G_SER.pdf
6A60G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
148+0.58 EUR
166+0.51 EUR
178+0.48 EUR
187+0.45 EUR
201+0.43 EUR
Mindestbestellmenge: 148 Stücke
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SS14M RSG SS13M SERIES_O2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 25A
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9497+0.071 EUR
Mindestbestellmenge: 9497 Stücke
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SMCJ33CA SMCJ.pdf
SMCJ33CA
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ33CAH SMCJH.pdf
SMCJ33CAH
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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UG6005PT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO247AD; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO247AD
Max. load current: 60A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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UG6005PTH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO3P; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO3P
Max. load current: 60A
Reverse recovery time: 25ns
Application: automotive industry
Produkt ist nicht verfügbar
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SS515FSH SS54FSH SERIES_B2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 150V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 110A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 28000 Stücke
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BZT52B3V6 RHG BZT52B2V4 series_F15.pdf
BZT52B3V6 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 4260 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
795+0.11 EUR
910+0.094 EUR
1025+0.083 EUR
1060+0.081 EUR
Mindestbestellmenge: 795 Stücke
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BZT52C3V6 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V6 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
Mindestbestellmenge: 120 Stücke
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BZX55C30 R0G
BZX55C30 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.26 EUR
Mindestbestellmenge: 20 Stücke
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BAV19W RHG BAV19W SERIES_E15.pdf
BAV19W RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Kind of package: reel; tape
auf Bestellung 1001 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 10 Stücke
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TSM340N06CP ROG TSM340N06_D14.pdf
TSM340N06CP ROG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 40W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 40W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SMBJ5V0A SMBJ.pdf
SMBJ5V0A
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
157+0.55 EUR
191+0.45 EUR
225+0.38 EUR
261+0.32 EUR
304+0.29 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 157 Stücke
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SK36A R2 SK32A SER.pdf
SK36A R2
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 6077 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
136+0.63 EUR
186+0.45 EUR
280+0.31 EUR
334+0.25 EUR
500+0.18 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 136 Stücke
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SK36A SK36A%20N0104%20REV.A.pdf
SK36A
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
136+0.63 EUR
199+0.43 EUR
214+0.39 EUR
Mindestbestellmenge: 136 Stücke
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SK36B SK36B%20N0936%20REV.A.pdf SK32B-SK36B.pdf
SK36B
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
157+0.55 EUR
216+0.39 EUR
250+0.35 EUR
341+0.25 EUR
360+0.24 EUR
Mindestbestellmenge: 157 Stücke
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SK36AH SK32AH SERIES_B2304.pdf
SK36AH
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR1545CT MBR1545CT(-1)%20MBRB1545CT%20N0736%20REV.A.pdf mbr1535ct-d.pdf MBR15xxCT.pdf MBR1545CT-1560CT.pdf MBR1535CT SERIES_I2104.pdf
MBR1545CT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
auf Bestellung 423 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
112+0.76 EUR
128+0.67 EUR
136+0.63 EUR
142+0.61 EUR
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MBR1545CTH
MBR1545CTH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
76+1.12 EUR
84+1.02 EUR
91+0.94 EUR
100+0.9 EUR
Mindestbestellmenge: 76 Stücke
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TSM60NE084CIT C0G pdf.php?pn=TSM60NE084CIT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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P6SMB200CA tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435
P6SMB200CA
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
222+0.38 EUR
252+0.33 EUR
Mindestbestellmenge: 200 Stücke
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BYG20G BYG20D SERIES_F2102.pdf byg20d.pdf byg20d.pdf
BYG20G
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYG20GH BYG20DH SERIES_A2102.pdf
BYG20GH
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TS9011SCY RFG TS9011-DTE.pdf
TS9011SCY RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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