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TS431ACX RFG TS431ACX RFG TAIWAN SEMICONDUCTOR TS431ACX-RFG.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1152 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
295+0.24 EUR
341+0.21 EUR
400+0.18 EUR
Mindestbestellmenge: 200
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TSM260P02CX RFG TSM260P02CX RFG TAIWAN SEMICONDUCTOR TSM260P02CX_A2312.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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SK210A TAIWAN SEMICONDUCTOR SK210A%20N0190%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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TSG65N190CR RVG TAIWAN SEMICONDUCTOR TSG65N190CR_B2305.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N068CE RVG TAIWAN SEMICONDUCTOR TSG65N068CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N195CE RVG TAIWAN SEMICONDUCTOR TSG65N195CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N110CE RVG TAIWAN SEMICONDUCTOR TSG65N110CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSM250N02CX RFG TSM250N02CX RFG TAIWAN SEMICONDUCTOR TSM250N02CX_B1811.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
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MBR20H200CT TAIWAN SEMICONDUCTOR MBR20H100CT SERIES_I2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.97V
Kind of package: tube
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
67+1.07 EUR
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GBPC2508W TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC2508 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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KBU605G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
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33+2.2 EUR
35+2.04 EUR
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KBU603G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
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KBU604G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 0.4kV
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
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KBU606G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 0.8kV
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
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KBU607G TAIWAN SEMICONDUCTOR KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
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TS34119CS RLG TS34119CS RLG TAIWAN SEMICONDUCTOR TS34119.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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TSD10L200CW MNG TAIWAN SEMICONDUCTOR TSD10H100CW%20SERIES_A15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 10A
Case: D2PAK
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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TSF20L200C C0G TAIWAN SEMICONDUCTOR TSF20L100C-TSF20L200C_C2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20A; ITO220AB; 980mV; Ir: 100uA
Type of diode: Schottky rectifying
Mounting: THT
Load current: 20A
Case: ITO220AB
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Leakage current: 0.1mA
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
2850+0.21 EUR
Mindestbestellmenge: 2850
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6A60G 6A60G TAIWAN SEMICONDUCTOR 6A05G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 60pF
auf Bestellung 58 Stücke:
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58+1.23 EUR
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SS14M RSG TAIWAN SEMICONDUCTOR SS13M SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Leakage current: 50µA
auf Bestellung 18000 Stücke:
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9497+0.061 EUR
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SMCJ33CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ33CAH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HERA806GH TAIWAN SEMICONDUCTOR HERA801G%20SERIES_J2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Reverse recovery time: 80ns
Application: automotive industry
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UG6005PT TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO247AD; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO247AD
Max. load current: 60A
Reverse recovery time: 25ns
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UG6005PTH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO3P; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO3P
Max. load current: 60A
Reverse recovery time: 25ns
Application: automotive industry
Produkt ist nicht verfügbar
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BZX55B20 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
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SS515FSH TAIWAN SEMICONDUCTOR SS54FSH SERIES_B2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 150V; 5A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Application: automotive industry
Max. forward impulse current: 110A
Max. off-state voltage: 150V
Case: SOD128F
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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BZT52B3V6 RHG BZT52B3V6 RHG TAIWAN SEMICONDUCTOR BZT52B2V4 series_F15.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Tolerance: ±2%
auf Bestellung 4270 Stücke:
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795+0.09 EUR
910+0.079 EUR
1025+0.07 EUR
1060+0.067 EUR
Mindestbestellmenge: 795
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BZT52B3V6S RRG BZT52B3V6S RRG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.6V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Tolerance: ±2%
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350+0.2 EUR
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BZT52C3V6 RHG BZT52C3V6 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Tolerance: ±5%
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120+0.6 EUR
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ABS2 ABS2 TAIWAN SEMICONDUCTOR ABS2_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Case: ABS
Features of semiconductor devices: glass passivated
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
156+0.46 EUR
200+0.36 EUR
Mindestbestellmenge: 90
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RABS20M RABS20M TAIWAN SEMICONDUCTOR RABS20M.pdf RABS20M_C2304.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.16V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Case: ABS
Features of semiconductor devices: glass passivated
auf Bestellung 928 Stücke:
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117+0.61 EUR
175+0.41 EUR
296+0.24 EUR
500+0.16 EUR
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RABS20M M3G RABS20M M3G TAIWAN SEMICONDUCTOR RABS20M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.16V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Case: ABS
Features of semiconductor devices: glass passivated
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33+2.17 EUR
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BZX55C30 R0G BZX55C30 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 20 Stücke:
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20+3.58 EUR
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BAV19W RHG BAV19W RHG TAIWAN SEMICONDUCTOR BAV19W SERIES_E15.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Kind of package: reel; tape
Reverse recovery time: 50ns
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TSM340N06CP ROG TAIWAN SEMICONDUCTOR TSM340N06_D14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 40W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 40W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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KBL404G KBL404G TAIWAN SEMICONDUCTOR KBL407G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Kind of package: in-tray
Case: KBL
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
57+1.26 EUR
60+1.19 EUR
Mindestbestellmenge: 36
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KBL402G TAIWAN SEMICONDUCTOR KBL407G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Kind of package: in-tray
Case: KBL
Produkt ist nicht verfügbar
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SMAJ10A TAIWAN SEMICONDUCTOR SMAJ.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf 3372_SMAJ10A000S0AX.pdf smaj%20series(400w,5v_440v).pdf 824500101.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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P4KE10A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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SMBJ5V0A SMBJ5V0A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 2644 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
217+0.33 EUR
261+0.27 EUR
304+0.24 EUR
353+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 162
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SK36A R2 SK36A R2 TAIWAN SEMICONDUCTOR SK32A SER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 8418 Stücke:
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157+0.46 EUR
225+0.32 EUR
321+0.22 EUR
371+0.19 EUR
506+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
7500+0.09 EUR
Mindestbestellmenge: 157
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SK36A SK36A TAIWAN SEMICONDUCTOR SK36A%20N0104%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
214+0.33 EUR
304+0.24 EUR
336+0.21 EUR
Mindestbestellmenge: 148
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SK36B TAIWAN SEMICONDUCTOR SK36B%20N0936%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
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SK36AH TAIWAN SEMICONDUCTOR SK32AH SERIES_B2304.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR1545CT MBR1545CT TAIWAN SEMICONDUCTOR MBR1545CT(-1)%20MBRB1545CT%20N0736%20REV.A.pdf mbr1535ct-d.pdf MBR1545CT-1560CT.pdf MBR15xxCT.pdf MBR1535CT SERIES_I2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
128+0.56 EUR
136+0.53 EUR
142+0.51 EUR
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MBR1545CTH MBR1545CTH TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
84+0.86 EUR
91+0.79 EUR
100+0.76 EUR
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TSM60NE084CIT C0G TAIWAN SEMICONDUCTOR pdf.php?pn=TSM60NE084CIT Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
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P6SMB200CA P6SMB200CA TAIWAN SEMICONDUCTOR tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435 eaton-p6smb-tvs-diode-power-esd-suppressor-data-sheet.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
222+0.32 EUR
252+0.28 EUR
Mindestbestellmenge: 200
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BYG20G TAIWAN SEMICONDUCTOR BYG20D SERIES_F2102.pdf byg20d.pdf byg20d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
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BYG20GH TAIWAN SEMICONDUCTOR BYG20DH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TS9011SCY RFG TS9011SCY RFG TAIWAN SEMICONDUCTOR TS9011-DTE.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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TS9011KCX RFG TS9011KCX RFG TAIWAN SEMICONDUCTOR TS9011_I2402.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.16A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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TS9011KCY RMG TS9011KCY RMG TAIWAN SEMICONDUCTOR pdf.php?pn=TS9011KCY Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.16A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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TS9011PCY RMG TS9011PCY RMG TAIWAN SEMICONDUCTOR Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.16A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3V
Output current: 0.16A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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TS6P02G TAIWAN SEMICONDUCTOR TS6P07G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 150A
Case: TS-6P
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 6A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 150A
Version: flat
Leads: flat pin
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BZX85C9V1 R0G BZX85C9V1 R0G TAIWAN SEMICONDUCTOR BZX85C10-R0G.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 9.1V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
439+0.16 EUR
527+0.14 EUR
800+0.089 EUR
Mindestbestellmenge: 334
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BZT52C9V1 RHG BZT52C9V1 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
auf Bestellung 459 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
Mindestbestellmenge: 455
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TSZU52C9V1 RGG TSZU52C9V1 RGG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 1608
Case - inch: 0603
auf Bestellung 3110 Stücke:
Lieferzeit 14-21 Tag (e)
420+0.17 EUR
465+0.15 EUR
530+0.14 EUR
575+0.12 EUR
Mindestbestellmenge: 420
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TS431ACX RFG TS431ACX-RFG.pdf
TS431ACX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
295+0.24 EUR
341+0.21 EUR
400+0.18 EUR
Mindestbestellmenge: 200
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TSM260P02CX RFG TSM260P02CX_A2312.pdf
TSM260P02CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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SK210A SK210A%20N0190%20REV.A.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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TSG65N190CR RVG TSG65N190CR_B2305.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N068CE RVG TSG65N068CE_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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TSG65N195CE RVG TSG65N195CE_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N110CE RVG TSG65N110CE_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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TSM250N02CX RFG TSM250N02CX_B1811.pdf
TSM250N02CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR20H200CT MBR20H100CT SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.97V
Kind of package: tube
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
67+1.07 EUR
Mindestbestellmenge: 46
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GBPC2508W GBPC15_25_35_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC2508 GBPC15_25_35_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Produkt ist nicht verfügbar
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KBU605G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
35+2.04 EUR
Mindestbestellmenge: 33
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KBU603G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
Produkt ist nicht verfügbar
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KBU604G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 0.4kV
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
Produkt ist nicht verfügbar
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KBU606G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 0.8kV
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
Produkt ist nicht verfügbar
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KBU607G KBU607G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Load current: 6A
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Version: flat
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Leads: round pin
Electrical mounting: THT
Produkt ist nicht verfügbar
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TS34119CS RLG TS34119.pdf
TS34119CS RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TSD10L200CW MNG TSD10H100CW%20SERIES_A15.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 10A
Case: D2PAK
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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TSF20L200C C0G TSF20L100C-TSF20L200C_C2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20A; ITO220AB; 980mV; Ir: 100uA
Type of diode: Schottky rectifying
Mounting: THT
Load current: 20A
Case: ITO220AB
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Leakage current: 0.1mA
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2850+0.21 EUR
Mindestbestellmenge: 2850
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6A60G 6A05G_SER.pdf
6A60G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 60pF
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.23 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
SS14M RSG SS13M SERIES_O2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Leakage current: 50µA
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9497+0.061 EUR
Mindestbestellmenge: 9497
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ33CA SMCJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ33CAH SMCJH.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HERA806GH HERA801G%20SERIES_J2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Reverse recovery time: 80ns
Application: automotive industry
Produkt ist nicht verfügbar
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UG6005PT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO247AD; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO247AD
Max. load current: 60A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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UG6005PTH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; TO3P; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO3P
Max. load current: 60A
Reverse recovery time: 25ns
Application: automotive industry
Produkt ist nicht verfügbar
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BZX55B20 A0G BZX55B2V4%20SERIES_F1610.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SS515FSH SS54FSH SERIES_B2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 150V; 5A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Application: automotive industry
Max. forward impulse current: 110A
Max. off-state voltage: 150V
Case: SOD128F
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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BZT52B3V6 RHG BZT52B2V4 series_F15.pdf
BZT52B3V6 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Tolerance: ±2%
auf Bestellung 4270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
795+0.09 EUR
910+0.079 EUR
1025+0.07 EUR
1060+0.067 EUR
Mindestbestellmenge: 795
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BZT52B3V6S RRG
BZT52B3V6S RRG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.6V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Tolerance: ±2%
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
350+0.2 EUR
Mindestbestellmenge: 350
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BZT52C3V6 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V6 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Tolerance: ±5%
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
Mindestbestellmenge: 120
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ABS2 ABS2_ser.pdf
ABS2
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Case: ABS
Features of semiconductor devices: glass passivated
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
156+0.46 EUR
200+0.36 EUR
Mindestbestellmenge: 90
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RABS20M RABS20M.pdf RABS20M_C2304.pdf
RABS20M
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.16V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Case: ABS
Features of semiconductor devices: glass passivated
auf Bestellung 928 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
175+0.41 EUR
296+0.24 EUR
500+0.16 EUR
Mindestbestellmenge: 117
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RABS20M M3G RABS20M.pdf
RABS20M M3G
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.16V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Case: ABS
Features of semiconductor devices: glass passivated
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
Mindestbestellmenge: 33
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BZX55C30 R0G
BZX55C30 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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BAV19W RHG BAV19W SERIES_E15.pdf
BAV19W RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Kind of package: reel; tape
Reverse recovery time: 50ns
auf Bestellung 1001 Stücke:
Lieferzeit 14-21 Tag (e)
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TSM340N06CP ROG TSM340N06_D14.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 40W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 40W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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KBL404G KBL407G_ser.pdf
KBL404G
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Kind of package: in-tray
Case: KBL
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
57+1.26 EUR
60+1.19 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
KBL402G KBL407G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Kind of package: in-tray
Case: KBL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ10A SMAJ.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf 3372_SMAJ10A000S0AX.pdf smaj%20series(400w,5v_440v).pdf 824500101.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4KE10A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Produkt ist nicht verfügbar
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SMBJ5V0A SMBJ.pdf
SMBJ5V0A
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 2644 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
217+0.33 EUR
261+0.27 EUR
304+0.24 EUR
353+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 162
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SK36A R2 SK32A SER.pdf
SK36A R2
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 8418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
225+0.32 EUR
321+0.22 EUR
371+0.19 EUR
506+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
7500+0.09 EUR
Mindestbestellmenge: 157
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SK36A SK36A%20N0104%20REV.A.pdf
SK36A
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
214+0.33 EUR
304+0.24 EUR
336+0.21 EUR
Mindestbestellmenge: 148
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SK36B SK36B%20N0936%20REV.A.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
SK36AH SK32AH SERIES_B2304.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR1545CT MBR1545CT(-1)%20MBRB1545CT%20N0736%20REV.A.pdf mbr1535ct-d.pdf MBR1545CT-1560CT.pdf MBR15xxCT.pdf MBR1535CT SERIES_I2104.pdf
MBR1545CT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AB; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
128+0.56 EUR
136+0.53 EUR
142+0.51 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
MBR1545CTH
MBR1545CTH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
84+0.86 EUR
91+0.79 EUR
100+0.76 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
TSM60NE084CIT C0G pdf.php?pn=TSM60NE084CIT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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P6SMB200CA tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435 eaton-p6smb-tvs-diode-power-esd-suppressor-data-sheet.pdf
P6SMB200CA
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
222+0.32 EUR
252+0.28 EUR
Mindestbestellmenge: 200
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BYG20G BYG20D SERIES_F2102.pdf byg20d.pdf byg20d.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
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BYG20GH BYG20DH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TS9011SCY RFG TS9011-DTE.pdf
TS9011SCY RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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TS9011KCX RFG TS9011_I2402.pdf
TS9011KCX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.16A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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TS9011KCY RMG pdf.php?pn=TS9011KCY
TS9011KCY RMG
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.16A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.16A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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TS9011PCY RMG
TS9011PCY RMG
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.16A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3V
Output current: 0.16A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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TS6P02G TS6P07G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 150A
Case: TS-6P
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 6A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 150A
Version: flat
Leads: flat pin
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BZX85C9V1 R0G BZX85C10-R0G.pdf
BZX85C9V1 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 9.1V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
439+0.16 EUR
527+0.14 EUR
800+0.089 EUR
Mindestbestellmenge: 334
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BZT52C9V1 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C9V1 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
auf Bestellung 459 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
Mindestbestellmenge: 455
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TSZU52C9V1 RGG
TSZU52C9V1 RGG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 1608
Case - inch: 0603
auf Bestellung 3110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
420+0.17 EUR
465+0.15 EUR
530+0.14 EUR
575+0.12 EUR
Mindestbestellmenge: 420
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