Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13523) > Seite 109 nach 226
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TLP2770(TP,E | Toshiba Semiconductor and Storage |
 Description: OPTOISOLTR 5KV PUSH PULL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 1.3ns, 1ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA |
auf Bestellung 20136 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TLP3306(TP15,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-75V Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.128", 3.25mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 400 mA Supplier Device Package: 4-USOP Part Status: Active Voltage - Load: 0 V ~ 75 V On-State Resistance (Max): 1.5 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 7627 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TLP3431(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 450MA 0-20V Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 4-SMD (0.096", 2.45mm) Packaging: Cut Tape (CT) Operating Temperature: -40°C ~ 110°C On-State Resistance (Max): 1.2 Ohms Voltage - Load: 0 V ~ 20 V Part Status: Active Supplier Device Package: 4-VSON (1.45x2.45) Load Current: 450 mA Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC |
auf Bestellung 30531 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TCR13AGADJ,LF | Toshiba Semiconductor and Storage |
Description: IC REG LIN POS ADJ 1.3A 6-WCSP Protection Features: Inrush Current, Over Current, Thermal Shutdown, UVLO Voltage Dropout (Max): 0.163V @ 1A PSRR: 90dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 0.55V Voltage - Output (Max): 3.6V Supplier Device Package: 6-WCSP (1.2x0.80) Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 92 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 1.3A Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TCR13AGADJ,LF | Toshiba Semiconductor and Storage |
Description: IC REG LIN POS ADJ 1.3A 6-WCSP Protection Features: Inrush Current, Over Current, Thermal Shutdown, UVLO Voltage Dropout (Max): 0.163V @ 1A PSRR: 90dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 0.55V Voltage - Output (Max): 3.6V Supplier Device Package: 6-WCSP (1.2x0.80) Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 92 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 1.3A Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 5959 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TPN1R603PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 80A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TPHR9203PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 150A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
TPH2R506PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 100A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V |
auf Bestellung 58000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TK4R3E06PL,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 80A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TK8R2A06PL,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 50A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 4.5V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V |
auf Bestellung 2982 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TK4R3A06PL,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 68A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TK3R1E04PL,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 100A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TK3R1A04PL,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 82A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TPN1R603PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 80A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V |
auf Bestellung 18523 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TPHR9203PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 150A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V |
auf Bestellung 3661 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TPH2R506PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 100A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V |
auf Bestellung 58174 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP5771(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SO Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, cUR, UR, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP5772(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SO Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 10V ~ 30V Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Part Status: Active Number of Channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
TLP5774(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SO Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 3A, 3A Voltage - Isolation: 5000Vrms Approval Agency: CQC, cUR, UR, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TLP2367(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.6V Data Rate: 50MBd Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2ns, 1ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 20ns, 20ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP2767(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SO Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.6V Data Rate: 50MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 2ns, 1ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 20ns, 20ns Number of Channels: 1 Current - Output / Channel: 10 mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
TLP240D(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-200V Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 250 mA Approval Agency: CQC, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP241A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 2A 0-40V Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 2 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 40 V On-State Resistance (Max): 150 mOhms |
auf Bestellung 79800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP3403(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-20V Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.096", 2.45mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-VSON (1.45x2.45) Part Status: Active Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 220 mOhms |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP5771(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SO Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, cUR, UR, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
auf Bestellung 1766 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP5772(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SO Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 10V ~ 30V Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Part Status: Active Number of Channels: 1 |
auf Bestellung 581 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP5774(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SO Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 8 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, cUR, UR, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 3A, 3A Technology: Optical Coupling Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.65V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs |
auf Bestellung 4010 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP2367(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.6V Data Rate: 50MBd Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2ns, 1ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 20ns, 20ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA |
auf Bestellung 16298 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP2767(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SO Current - Output / Channel: 10 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 20ns, 20ns Common Mode Transient Immunity (Min): 25kV/µs Rise / Fall Time (Typ): 2ns, 1ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 15mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 50MBd Voltage - Forward (Vf) (Typ): 1.6V Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP240D(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-200V Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 250 mA Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: CQC, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 13480 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP241A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 2A 0-40V Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 2 A Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 40 V On-State Resistance (Max): 150 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 80630 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP3403(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-20V On-State Resistance (Max): 220 mOhms Relay Type: Photo-Coupled Relay (Photorelay) Operating Temperature: -40°C ~ 110°C Voltage - Load: 0 V ~ 20 V Part Status: Active Supplier Device Package: 4-VSON (1.45x2.45) Load Current: 1 A Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 4-SMD (0.096", 2.45mm) Packaging: Cut Tape (CT) |
auf Bestellung 30518 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SSM3K7002KFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 400MA USM Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: USM Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TLP2770(D4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SO Current - Output / Channel: 10 mA Number of Channels: 1 Part Status: Active Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 1.3ns, 1ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 8mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 20MBd Voltage - Forward (Vf) (Typ): 1.5V Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
TC7WH02FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 2CH 2-INP SM8 Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SM8 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
TC7WH02FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 2CH 2-INP SM8 Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SM8 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
auf Bestellung 2787 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| KIA78L06BP | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR LDO 6V DIP Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
TTA004B,Q | Toshiba Semiconductor and Storage |
Description: TRANS PNP 160V 1.5A TO-126N Packaging: Bag Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-126N Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 10 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
TTC004B,Q | Toshiba Semiconductor and Storage |
Description: TRANS NPN 160V 1.5A TO-126N Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-126N Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 10 W |
auf Bestellung 8806 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| TTD1509B,Q(S | Toshiba Semiconductor and Storage |
Description: TRANSISTOR NPN TO126N Packaging: Tube Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
2SA1020A,NSEIKIF(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
2SA1020A,T6CSF(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-O(F,M) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-O(TE6,F,M) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-O,CKF(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-O,F(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-O,T6CSF(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(6MBH1,AF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(F,M) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(HIT,F,M) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO92MOD Power - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(ND1,AF) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(T6CANOAF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO92MOD Power - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(T6CANOFM | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(T6CN,A,F | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(T6FJT,AF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(T6ND1,AF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(T6ND3,AF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(T6OMI,FM | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(T6TOJ,FM | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2SA1020-Y(T6TR,A,F | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TO-92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TLP2770(TP,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 20136 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.55 EUR |
| 10+ | 3.28 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.19 EUR |
| TLP3306(TP15,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-75V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 75 V
On-State Resistance (Max): 1.5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 400MA 0-75V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 75 V
On-State Resistance (Max): 1.5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 7627 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.33 EUR |
| 10+ | 6.16 EUR |
| 100+ | 4.89 EUR |
| 500+ | 4.33 EUR |
| TLP3431(TP,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 450MA 0-20V
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.096", 2.45mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 1.2 Ohms
Voltage - Load: 0 V ~ 20 V
Part Status: Active
Supplier Device Package: 4-VSON (1.45x2.45)
Load Current: 450 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Description: SSR RELAY SPST-NO 450MA 0-20V
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.096", 2.45mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 1.2 Ohms
Voltage - Load: 0 V ~ 20 V
Part Status: Active
Supplier Device Package: 4-VSON (1.45x2.45)
Load Current: 450 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
auf Bestellung 30531 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.83 EUR |
| 10+ | 5.78 EUR |
| 100+ | 4.57 EUR |
| 500+ | 4.05 EUR |
| 1000+ | 3.87 EUR |
| TCR13AGADJ,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LIN POS ADJ 1.3A 6-WCSP
Protection Features: Inrush Current, Over Current, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.163V @ 1A
PSRR: 90dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 0.55V
Voltage - Output (Max): 3.6V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 92 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.3A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG LIN POS ADJ 1.3A 6-WCSP
Protection Features: Inrush Current, Over Current, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.163V @ 1A
PSRR: 90dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 0.55V
Voltage - Output (Max): 3.6V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 92 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.3A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.27 EUR |
| TCR13AGADJ,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LIN POS ADJ 1.3A 6-WCSP
Protection Features: Inrush Current, Over Current, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.163V @ 1A
PSRR: 90dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 0.55V
Voltage - Output (Max): 3.6V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 92 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.3A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG LIN POS ADJ 1.3A 6-WCSP
Protection Features: Inrush Current, Over Current, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.163V @ 1A
PSRR: 90dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 0.55V
Voltage - Output (Max): 3.6V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 92 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.3A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 5959 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 46+ | 0.46 EUR |
| 51+ | 0.42 EUR |
| 100+ | 0.36 EUR |
| 250+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.3 EUR |
| 2500+ | 0.29 EUR |
| TPN1R603PL,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.74 EUR |
| 10000+ | 0.69 EUR |
| 15000+ | 0.67 EUR |
| TPHR9203PL,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TPH2R506PL,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
auf Bestellung 58000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.12 EUR |
| 10000+ | 1.06 EUR |
| TK4R3E06PL,S1X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Description: MOSFET N-CH 60V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.24 EUR |
| TK8R2A06PL,S4X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 50A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
Description: MOSFET N-CH 60V 50A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
auf Bestellung 2982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.56 EUR |
| 50+ | 1.7 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.11 EUR |
| 2000+ | 1.01 EUR |
| TK4R3A06PL,S4X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 68A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Description: MOSFET N-CH 60V 68A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.55 EUR |
| 50+ | 2.21 EUR |
| TK3R1E04PL,S1X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
Description: MOSFET N-CH 40V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.88 EUR |
| TK3R1A04PL,S4X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 82A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
Description: MOSFET N-CH 40V 82A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.16 EUR |
| 50+ | 2.01 EUR |
| 100+ | 1.81 EUR |
| TPN1R603PL,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 18523 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.93 EUR |
| 12+ | 1.86 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.88 EUR |
| 2000+ | 0.81 EUR |
| TPHR9203PL,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
auf Bestellung 3661 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.58 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.48 EUR |
| 2000+ | 1.45 EUR |
| TPH2R506PL,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
auf Bestellung 58174 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.21 EUR |
| 10+ | 2.68 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.33 EUR |
| 2000+ | 1.3 EUR |
| TLP5771(TP,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.86 EUR |
| TLP5772(TP,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLP5774(TP,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.84 EUR |
| TLP2367(TPR,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.99 EUR |
| 6000+ | 1.92 EUR |
| 9000+ | 1.88 EUR |
| TLP2767(TP,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLP240D(TP1,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.62 EUR |
| 3000+ | 1.55 EUR |
| 4500+ | 1.51 EUR |
| 7500+ | 1.48 EUR |
| 10500+ | 1.45 EUR |
| TLP241A(TP1,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 79800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.7 EUR |
| 3000+ | 1.63 EUR |
| 4500+ | 1.59 EUR |
| 7500+ | 1.55 EUR |
| 10500+ | 1.52 EUR |
| TLP3403(TP,F |
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 3.37 EUR |
| TLP5771(TP,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1766 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.21 EUR |
| 10+ | 3.02 EUR |
| 100+ | 2.32 EUR |
| 500+ | 2.01 EUR |
| TLP5772(TP,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.19 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.31 EUR |
| 500+ | 2.01 EUR |
| TLP5774(TP,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 8 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, cUR, UR, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 3A, 3A
Technology: Optical Coupling
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 8 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, cUR, UR, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 3A, 3A
Technology: Optical Coupling
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
auf Bestellung 4010 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.88 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.33 EUR |
| 500+ | 2 EUR |
| TLP2367(TPR,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 16298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.61 EUR |
| 10+ | 3.33 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.24 EUR |
| 1000+ | 2.12 EUR |
| TLP2767(TP,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 2ns, 1ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 15mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 50MBd
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 2ns, 1ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 15mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 50MBd
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.44 EUR |
| 10+ | 3.21 EUR |
| 100+ | 2.48 EUR |
| TLP240D(TP1,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 250 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 250 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 13480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.75 EUR |
| 10+ | 2.68 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.76 EUR |
| TLP241A(TP1,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 80630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.92 EUR |
| 10+ | 2.81 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.84 EUR |
| TLP3403(TP,F |
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-20V
On-State Resistance (Max): 220 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
Operating Temperature: -40°C ~ 110°C
Voltage - Load: 0 V ~ 20 V
Part Status: Active
Supplier Device Package: 4-VSON (1.45x2.45)
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.096", 2.45mm)
Packaging: Cut Tape (CT)
Description: SSR RELAY SPST-NO 1A 0-20V
On-State Resistance (Max): 220 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
Operating Temperature: -40°C ~ 110°C
Voltage - Load: 0 V ~ 20 V
Part Status: Active
Supplier Device Package: 4-VSON (1.45x2.45)
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.096", 2.45mm)
Packaging: Cut Tape (CT)
auf Bestellung 30518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.27 EUR |
| 10+ | 5.37 EUR |
| 100+ | 4.24 EUR |
| 500+ | 3.74 EUR |
| 1000+ | 3.65 EUR |
| SSM3K7002KFU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA USM
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 400MA USM
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.058 EUR |
| 6000+ | 0.05 EUR |
| 9000+ | 0.035 EUR |
| 15000+ | 0.033 EUR |
| 21000+ | 0.031 EUR |
| TLP2770(D4,E |
|
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 1.3ns, 1ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 20MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 1.3ns, 1ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 20MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC7WH02FU,LJ(CT |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TC7WH02FU,LJ(CT |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 2787 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 96+ | 0.21 EUR |
| 109+ | 0.19 EUR |
| 129+ | 0.17 EUR |
| 250+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| KIA78L06BP |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 6V DIP
Packaging: Bulk
Part Status: Active
Description: IC REG LINEAR LDO 6V DIP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TTA004B,Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 1.5A TO-126N
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Description: TRANS PNP 160V 1.5A TO-126N
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TTC004B,Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 160V 1.5A TO-126N
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Description: TRANS NPN 160V 1.5A TO-126N
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
auf Bestellung 8806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.78 EUR |
| 20+ | 1.11 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| 2000+ | 0.45 EUR |
| 5000+ | 0.4 EUR |
| TTD1509B,Q(S |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN TO126N
Packaging: Tube
Part Status: Active
Description: TRANSISTOR NPN TO126N
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020A,NSEIKIF(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020A,T6CSF(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-O(F,M) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-O(TE6,F,M) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-O,CKF(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-O,F(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-O,T6CSF(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(6MBH1,AF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(F,M) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(HIT,F,M) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(ND1,AF) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(T6CANOAF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(T6CANOFM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(T6CN,A,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(T6FJT,AF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(T6ND1,AF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(T6ND3,AF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(T6OMI,FM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(T6TOJ,FM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1020-Y(T6TR,A,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH