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SSM3K131TU,LF SSM3K131TU,LF Toshiba Semiconductor and Storage docget.jsp?did=12385&prodName=SSM3K131TU Description: MOSFET N-CH 30V 6A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 27.6mOhm @ 4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 12250 Stücke:
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17+1.24 EUR
26+0.83 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.37 EUR
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SSM3K48FU,LF SSM3K48FU,LF Toshiba Semiconductor and Storage docget.jsp?did=6725&prodName=SSM3K48FU Description: MOSFET N-CH 30V 100MA USM
auf Bestellung 14961 Stücke:
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26+0.82 EUR
32+0.68 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.15 EUR
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SSM5H90ATU,LF SSM5H90ATU,LF Toshiba Semiconductor and Storage docget.jsp?did=13824&prodName=SSM5H90ATU Description: SMALL SIGNAL MOSFET N-CH VDSS60V
auf Bestellung 6000 Stücke:
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SSM6J422TU,LF SSM6J422TU,LF Toshiba Semiconductor and Storage SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU Description: MOSFET P-CH 20V 4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 3895 Stücke:
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23+0.92 EUR
37+0.57 EUR
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500+0.27 EUR
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SSM6K208FE,LF SSM6K208FE,LF Toshiba Semiconductor and Storage docget.jsp?did=11044&prodName=SSM6K208FE Description: MOSFET N-CH 30V 1.9A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 3970 Stücke:
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31+0.69 EUR
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500+0.33 EUR
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SSM6K407TU,LF SSM6K407TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10949&prodName=SSM6K407TU Description: MOSFET N-CH 60V 2A UF6
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SSM6P69NU,LF SSM6P69NU,LF Toshiba Semiconductor and Storage docget.jsp?did=61140&prodName=SSM6P69NU Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 56822 Stücke:
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1SS321,LF 1SS321,LF Toshiba Semiconductor and Storage docget.jsp?did=3312&prodName=1SS321 Description: DIODE SCHOTTKY 10V 50MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 30232 Stücke:
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1SS322(TE85L,F) 1SS322(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=3314&prodName=1SS322 Description: DIODE SCHOTTKY 40V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 4421 Stücke:
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1SS385,LF(CT 1SS385,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=3364&prodName=1SS385 Description: DIODE SCHOTTKY 10V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 1945 Stücke:
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1SS385FV,L3F 1SS385FV,L3F Toshiba Semiconductor and Storage docget.jsp?did=4395&prodName=1SS385FV Description: DIODE SCHOTTKY 10V 100MAVESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 8455 Stücke:
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128+0.17 EUR
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TCR8BM105,L3F TCR8BM105,L3F Toshiba Semiconductor and Storage docget.jsp?did=63495&prodName=TCR8BM105 Description: 800MA LDO VOUT1.05V DROPOUT170MV
auf Bestellung 10000 Stücke:
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TCR8BM11,L3F TCR8BM11,L3F Toshiba Semiconductor and Storage docget.jsp?did=63495&prodName=TCR8BM11 Description: 800MA LDO VOUT1.1V DROPOUT170MV
auf Bestellung 10000 Stücke:
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1SS360,LJ(CT 1SS360,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=3331&prodName=1SS360 Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS360,LJ(CT 1SS360,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=3331&prodName=1SS360 Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 2800 Stücke:
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50+0.42 EUR
85+0.25 EUR
118+0.18 EUR
137+0.15 EUR
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TB9056FNG(O,EL) TB9056FNG(O,EL) Toshiba Semiconductor and Storage TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Servo DC
Supplier Device Package: 24-SSOP
Technology: Bi-CMOS
Voltage - Supply: 7V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Current - Output: 2A
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB9056FNG(O,EL) TB9056FNG(O,EL) Toshiba Semiconductor and Storage TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Servo DC
Supplier Device Package: 24-SSOP
Technology: Bi-CMOS
Voltage - Supply: 7V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Current - Output: 2A
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TB67B000AHG TB67B000AHG Toshiba Semiconductor and Storage TB67B000AHG_datasheet_en_20190530.pdf?did=66548&prodName=TB67B000AHG Description: BRUSHLESS MOTOR DRIVER, 600V, 2A
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 30-HDIP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 115°C
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 30-PowerDIP Module
Packaging: Tube
auf Bestellung 26 Stücke:
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2+15.4 EUR
10+13.91 EUR
25+13.27 EUR
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TK3R3A06PL,S4X TK3R3A06PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=58713&prodName=TK3R3A06PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
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5+5.11 EUR
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TK49N65W5,S1F TK49N65W5,S1F Toshiba Semiconductor and Storage docget.jsp?did=14537&prodName=TK49N65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK3R2A10PL,S4X TK3R2A10PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=60593&prodName=TK3R2A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 1199 Stücke:
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3+8.16 EUR
10+5.39 EUR
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100+3.81 EUR
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TK6R7A10PL,S4X TK6R7A10PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=60599&prodName=TK6R7A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
auf Bestellung 16 Stücke:
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6+4.05 EUR
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TPN5R203PL,LQ TPN5R203PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55524&prodName=TPN5R203PL Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
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3000+0.45 EUR
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TK28N65W5,S1F TK28N65W5,S1F Toshiba Semiconductor and Storage docget.jsp?did=14529&prodName=TK28N65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 138 Stücke:
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2+13.3 EUR
30+7.62 EUR
60+6.94 EUR
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TPH1R405PL,L1Q TPH1R405PL,L1Q Toshiba Semiconductor and Storage TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL Description: MOSFET N-CH 45V 120A 8SOP
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Produkt ist nicht verfügbar
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TK7R4A10PL,S4X TK7R4A10PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=60497&prodName=TK7R4A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 33 Stücke:
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5+5.02 EUR
10+3.24 EUR
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TK4R1A10PL,S4X TK4R1A10PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=60610&prodName=TK4R1A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
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4+5.34 EUR
10+3.46 EUR
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TPH2R003PL,LQ TPH2R003PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=54498&prodName=TPH2R003PL Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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3000+0.79 EUR
6000+0.74 EUR
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TK110E10PL,S1X TK110E10PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=60605&prodName=TK110E10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 5466 Stücke:
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7+3.45 EUR
10+2.19 EUR
50+1.65 EUR
100+1.48 EUR
500+1.17 EUR
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TK3R2E06PL,S1X TK3R2E06PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=58637&prodName=TK3R2E06PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
auf Bestellung 7 Stücke:
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5+5.05 EUR
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TK49N65W,S1F TK49N65W,S1F Toshiba Semiconductor and Storage docget.jsp?did=14538&prodName=TK49N65W Description: PB-F POWER MOSFET TRANSISTOR TO2
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK3R9E10PL,S1X TK3R9E10PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=60597&prodName=TK3R9E10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
auf Bestellung 6 Stücke:
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4+5.49 EUR
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TK5R3A06PL,S4X TK5R3A06PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=58508&prodName=TK5R3A06PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
auf Bestellung 50 Stücke:
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5+4.21 EUR
10+2.7 EUR
50+2.05 EUR
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TPCA8047-H(T2L1,VM TPCA8047-H(T2L1,VM Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 32A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TPH2R003PL,LQ TPH2R003PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=54498&prodName=TPH2R003PL Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 10602 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.01 EUR
11+1.92 EUR
100+1.29 EUR
500+1.01 EUR
1000+0.93 EUR
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TPN5R203PL,LQ TPN5R203PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55524&prodName=TPN5R203PL Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 19796 Stücke:
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10+2.14 EUR
16+1.33 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
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TPH1R405PL,L1Q TPH1R405PL,L1Q Toshiba Semiconductor and Storage TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL Description: MOSFET N-CH 45V 120A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4136 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.13 EUR
10+2.64 EUR
100+1.78 EUR
500+1.42 EUR
1000+1.31 EUR
2000+1.2 EUR
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TPCA8052-H(T2L1,VM TPCA8052-H(T2L1,VM Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TPCA8047-H(T2L1,VM TPCA8047-H(T2L1,VM Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 32A 8SOP
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Produkt ist nicht verfügbar
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TPCA8052-H(T2L1,VM TPCA8052-H(T2L1,VM Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC78H651AFNG,EL TC78H651AFNG,EL Toshiba Semiconductor and Storage TC78H651AFNG_datasheet_en_20190131.pdf?did=64622&prodName=TC78H651AFNG Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-TSSOP
Voltage - Load: 1.8V ~ 7.5V
Technology: DMOS
Applications: General Purpose
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TC78H651AFNG,EL TC78H651AFNG,EL Toshiba Semiconductor and Storage TC78H651AFNG_datasheet_en_20190131.pdf?did=64622&prodName=TC78H651AFNG Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-TSSOP
Voltage - Load: 1.8V ~ 7.5V
Technology: DMOS
Applications: General Purpose
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2714 Stücke:
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6+3.75 EUR
10+2.33 EUR
25+1.96 EUR
100+1.54 EUR
250+1.33 EUR
500+1.2 EUR
1000+1.09 EUR
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DF2B5M4ASL,L3F DF2B5M4ASL,L3F Toshiba Semiconductor and Storage docget.jsp?did=66263&prodName=DF2B5M4ASL Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 20000 Stücke:
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10000+0.11 EUR
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DF2B5M4ASL,L3F DF2B5M4ASL,L3F Toshiba Semiconductor and Storage docget.jsp?did=66263&prodName=DF2B5M4ASL Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 24643 Stücke:
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57+0.37 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
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TLP250(LF5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP785(F TLP785(F Toshiba Semiconductor and Storage TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785 Description: OPTOISOLATOR 5KV 1CH TRANS
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Output Type: Transistor
Packaging: Tube
Produkt ist nicht verfügbar
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TLP624-4(BV,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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TLP250F(D4INV-T4,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP785F(D4BLT7,F TLP785F(D4BLT7,F Toshiba Semiconductor and Storage docget.jsp?did=10569&prodName=TLP785F Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Produkt ist nicht verfügbar
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TLP352F(D4-TP4,S) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TORX1850(MEIDEN,F) Toshiba Semiconductor and Storage Description: IC TRANSCEIVING MODULE
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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TLP700AF(D4-TP,6) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP250(D4-FA-TP1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP250(D4-TP4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP250HF(D4-TP4,F) TLP250HF(D4-TP4,F) Toshiba Semiconductor and Storage TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Produkt ist nicht verfügbar
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TLP161J(T5TL,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP627F-2(D4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP250HF(F) TLP250HF(F) Toshiba Semiconductor and Storage TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H Description: OPTOISO 3.75KV PUSH PULL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Produkt ist nicht verfügbar
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TLP5701(LF4,E TLP5701(LF4,E Toshiba Semiconductor and Storage datasheet_en_20221208.pdf?did=15224 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Part Status: Active
Packaging: Tube
Current - Output High, Low: 400mA, 400mA
Technology: Optical Coupling
Current - Peak Output: 600mA
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 350ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
auf Bestellung 128 Stücke:
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8+2.95 EUR
11+2.08 EUR
125+1.54 EUR
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TLP250(D4-TP5,NP,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM3K131TU,LF docget.jsp?did=12385&prodName=SSM3K131TU
SSM3K131TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 27.6mOhm @ 4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 12250 Stücke:
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17+1.24 EUR
26+0.83 EUR
100+0.55 EUR
500+0.42 EUR
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SSM3K48FU,LF docget.jsp?did=6725&prodName=SSM3K48FU
SSM3K48FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA USM
auf Bestellung 14961 Stücke:
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26+0.82 EUR
32+0.68 EUR
100+0.36 EUR
500+0.24 EUR
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SSM5H90ATU,LF docget.jsp?did=13824&prodName=SSM5H90ATU
SSM5H90ATU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS60V
auf Bestellung 6000 Stücke:
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SSM6J422TU,LF SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU
SSM6J422TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 3895 Stücke:
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23+0.92 EUR
37+0.57 EUR
100+0.37 EUR
500+0.27 EUR
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SSM6K208FE,LF docget.jsp?did=11044&prodName=SSM6K208FE
SSM6K208FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 3970 Stücke:
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19+1.13 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
2000+0.27 EUR
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SSM6K407TU,LF docget.jsp?did=10949&prodName=SSM6K407TU
SSM6K407TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2A UF6
auf Bestellung 3870 Stücke:
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SSM6P69NU,LF docget.jsp?did=61140&prodName=SSM6P69NU
SSM6P69NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 56822 Stücke:
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AnzahlPrivatkunde
15+1.4 EUR
25+0.87 EUR
50+0.63 EUR
100+0.56 EUR
500+0.43 EUR
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1SS321,LF docget.jsp?did=3312&prodName=1SS321
1SS321,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 50MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 30232 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
65+0.32 EUR
91+0.23 EUR
104+0.2 EUR
500+0.14 EUR
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1SS322(TE85L,F) docget.jsp?did=3314&prodName=1SS322
1SS322(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 4421 Stücke:
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40+0.52 EUR
67+0.31 EUR
93+0.23 EUR
107+0.19 EUR
500+0.14 EUR
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1SS385,LF(CT docget.jsp?did=3364&prodName=1SS385
1SS385,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 1945 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
56+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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1SS385FV,L3F docget.jsp?did=4395&prodName=1SS385FV
1SS385FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MAVESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 8455 Stücke:
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AnzahlPrivatkunde
48+0.44 EUR
80+0.26 EUR
112+0.19 EUR
128+0.17 EUR
500+0.12 EUR
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TCR8BM105,L3F docget.jsp?did=63495&prodName=TCR8BM105
TCR8BM105,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO VOUT1.05V DROPOUT170MV
auf Bestellung 10000 Stücke:
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TCR8BM11,L3F docget.jsp?did=63495&prodName=TCR8BM11
TCR8BM11,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO VOUT1.1V DROPOUT170MV
auf Bestellung 10000 Stücke:
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1SS360,LJ(CT docget.jsp?did=3331&prodName=1SS360
1SS360,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS360,LJ(CT docget.jsp?did=3331&prodName=1SS360
1SS360,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
85+0.25 EUR
118+0.18 EUR
137+0.15 EUR
500+0.11 EUR
Mindestbestellmenge: 50 Stücke
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TB9056FNG(O,EL) TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG
TB9056FNG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Servo DC
Supplier Device Package: 24-SSOP
Technology: Bi-CMOS
Voltage - Supply: 7V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Current - Output: 2A
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB9056FNG(O,EL) TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG
TB9056FNG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Servo DC
Supplier Device Package: 24-SSOP
Technology: Bi-CMOS
Voltage - Supply: 7V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Current - Output: 2A
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TB67B000AHG TB67B000AHG_datasheet_en_20190530.pdf?did=66548&prodName=TB67B000AHG
TB67B000AHG
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHLESS MOTOR DRIVER, 600V, 2A
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 30-HDIP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 115°C
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 30-PowerDIP Module
Packaging: Tube
auf Bestellung 26 Stücke:
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2+15.4 EUR
10+13.91 EUR
25+13.27 EUR
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TK3R3A06PL,S4X docget.jsp?did=58713&prodName=TK3R3A06PL
TK3R3A06PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
auf Bestellung 6 Stücke:
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AnzahlPrivatkunde
5+5.11 EUR
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TK49N65W5,S1F docget.jsp?did=14537&prodName=TK49N65W5
TK49N65W5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK3R2A10PL,S4X docget.jsp?did=60593&prodName=TK3R2A10PL
TK3R2A10PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 1199 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.16 EUR
10+5.39 EUR
50+4.19 EUR
100+3.81 EUR
500+3.13 EUR
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TK6R7A10PL,S4X docget.jsp?did=60599&prodName=TK6R7A10PL
TK6R7A10PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.05 EUR
10+2.59 EUR
Mindestbestellmenge: 6 Stücke
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TPN5R203PL,LQ docget.jsp?did=55524&prodName=TPN5R203PL
TPN5R203PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.45 EUR
Mindestbestellmenge: 3000 Stücke
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TK28N65W5,S1F docget.jsp?did=14529&prodName=TK28N65W5
TK28N65W5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.3 EUR
30+7.62 EUR
60+6.94 EUR
120+6.37 EUR
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TPH1R405PL,L1Q TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL
TPH1R405PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Produkt ist nicht verfügbar
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TK7R4A10PL,S4X docget.jsp?did=60497&prodName=TK7R4A10PL
TK7R4A10PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.02 EUR
10+3.24 EUR
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TK4R1A10PL,S4X docget.jsp?did=60610&prodName=TK4R1A10PL
TK4R1A10PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.34 EUR
10+3.46 EUR
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TPH2R003PL,LQ docget.jsp?did=54498&prodName=TPH2R003PL
TPH2R003PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.79 EUR
6000+0.74 EUR
Mindestbestellmenge: 3000 Stücke
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TK110E10PL,S1X docget.jsp?did=60605&prodName=TK110E10PL
TK110E10PL,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 5466 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.45 EUR
10+2.19 EUR
50+1.65 EUR
100+1.48 EUR
500+1.17 EUR
Mindestbestellmenge: 7 Stücke
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TK3R2E06PL,S1X docget.jsp?did=58637&prodName=TK3R2E06PL
TK3R2E06PL,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.05 EUR
Mindestbestellmenge: 5 Stücke
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TK49N65W,S1F docget.jsp?did=14538&prodName=TK49N65W
TK49N65W,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO2
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK3R9E10PL,S1X docget.jsp?did=60597&prodName=TK3R9E10PL
TK3R9E10PL,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.49 EUR
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TK5R3A06PL,S4X docget.jsp?did=58508&prodName=TK5R3A06PL
TK5R3A06PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.21 EUR
10+2.7 EUR
50+2.05 EUR
Mindestbestellmenge: 5 Stücke
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TPCA8047-H(T2L1,VM
TPCA8047-H(T2L1,VM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 32A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TPH2R003PL,LQ docget.jsp?did=54498&prodName=TPH2R003PL
TPH2R003PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 10602 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.01 EUR
11+1.92 EUR
100+1.29 EUR
500+1.01 EUR
1000+0.93 EUR
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TPN5R203PL,LQ docget.jsp?did=55524&prodName=TPN5R203PL
TPN5R203PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 19796 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
16+1.33 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
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TPH1R405PL,L1Q TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL
TPH1R405PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4136 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.13 EUR
10+2.64 EUR
100+1.78 EUR
500+1.42 EUR
1000+1.31 EUR
2000+1.2 EUR
Mindestbestellmenge: 6 Stücke
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TPCA8052-H(T2L1,VM
TPCA8052-H(T2L1,VM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TPCA8047-H(T2L1,VM
TPCA8047-H(T2L1,VM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 32A 8SOP
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Produkt ist nicht verfügbar
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TPCA8052-H(T2L1,VM
TPCA8052-H(T2L1,VM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TC78H651AFNG,EL TC78H651AFNG_datasheet_en_20190131.pdf?did=64622&prodName=TC78H651AFNG
TC78H651AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-TSSOP
Voltage - Load: 1.8V ~ 7.5V
Technology: DMOS
Applications: General Purpose
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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TC78H651AFNG,EL TC78H651AFNG_datasheet_en_20190131.pdf?did=64622&prodName=TC78H651AFNG
TC78H651AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-TSSOP
Voltage - Load: 1.8V ~ 7.5V
Technology: DMOS
Applications: General Purpose
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2714 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.75 EUR
10+2.33 EUR
25+1.96 EUR
100+1.54 EUR
250+1.33 EUR
500+1.2 EUR
1000+1.09 EUR
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DF2B5M4ASL,L3F docget.jsp?did=66263&prodName=DF2B5M4ASL
DF2B5M4ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.11 EUR
20000+0.098 EUR
Mindestbestellmenge: 10000 Stücke
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DF2B5M4ASL,L3F docget.jsp?did=66263&prodName=DF2B5M4ASL
DF2B5M4ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 24643 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
57+0.37 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 35 Stücke
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TLP250(LF5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP785(F TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785
TLP785(F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Output Type: Transistor
Packaging: Tube
Produkt ist nicht verfügbar
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TLP624-4(BV,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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TLP250F(D4INV-T4,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP785F(D4BLT7,F docget.jsp?did=10569&prodName=TLP785F
TLP785F(D4BLT7,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Produkt ist nicht verfügbar
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TLP352F(D4-TP4,S)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TORX1850(MEIDEN,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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TLP700AF(D4-TP,6)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP250(D4-FA-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP250(D4-TP4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP250HF(D4-TP4,F) TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H
TLP250HF(D4-TP4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Produkt ist nicht verfügbar
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TLP161J(T5TL,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP627F-2(D4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP250HF(F) TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H
TLP250HF(F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Produkt ist nicht verfügbar
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TLP5701(LF4,E datasheet_en_20221208.pdf?did=15224
TLP5701(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Part Status: Active
Packaging: Tube
Current - Output High, Low: 400mA, 400mA
Technology: Optical Coupling
Current - Peak Output: 600mA
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 350ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.95 EUR
11+2.08 EUR
125+1.54 EUR
Mindestbestellmenge: 8 Stücke
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TLP250(D4-TP5,NP,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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