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TCR2LF09,LM(CT TCR2LF09,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF09 Description: IC REG LINEAR 0.9V 200MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR2LF095,LM(CT TCR2LF095,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF095 Description: IC REG LINEAR 0.95V 200MA SMV
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TCR2LF105,LM(CT TCR2LF105,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF19 Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Voltage Dropout (Max): 1.4V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LF11,LM(CT TCR2LF11,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF11 Description: IC REG LINEAR 1.1V 200MA SMV
Produkt ist nicht verfügbar
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TCR2LF115,LM(CT TCR2LF115,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF115 Description: IC REG LINEAR 1.15V 200MA SMV
auf Bestellung 3000 Stücke:
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3000+0.12 EUR
Mindestbestellmenge: 3000
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TCR2LF13,LM(CT TCR2LF13,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF13 Description: IC REG LINEAR 1.3V 200MA SMV
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3000+0.13 EUR
Mindestbestellmenge: 3000
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TCR2LF21,LM(CT TCR2LF21,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF21 Description: IC REG LINEAR 2.1V 200MA SMV
Produkt ist nicht verfügbar
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TCR2LF28,LM(CT TCR2LF28,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF28 Description: IC REG LINEAR 2.8V 200MA SMV
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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TCR2LF285,LM(CT TCR2LF285,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF285 Description: 200MA LDO VOUT2.85V DROPOUT220MV
Produkt ist nicht verfügbar
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TCR2LF31,LM(CT TCR2LF31,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF31 Description: 200MA LDO VOUT3.1V DROPOUT220MV
auf Bestellung 6000 Stücke:
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TCR4DG105,LF TCR4DG105,LF Toshiba Semiconductor and Storage TCR4DG105_datasheet_en_20170512.pdf?did=57958&prodName=TCR4DG105 Description: IC REG LINEAR 1.05V 420MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 420mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.991V @ 420mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR5AM18A,LF TCR5AM18A,LF Toshiba Semiconductor and Storage docget.jsp?did=58512&prodName=TCR5AM18A Description: 500MA LDO VOUT1.8V DROPOUT90MV I
auf Bestellung 5000 Stücke:
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5000+0.22 EUR
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TCR8BM10,L3F TCR8BM10,L3F Toshiba Semiconductor and Storage TCR8BM10_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM10 Description: IC REG LINEAR 1V 800MA 5DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.23V @ 800mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR8BM105,L3F TCR8BM105,L3F Toshiba Semiconductor and Storage docget.jsp?did=63495&prodName=TCR8BM105 Description: 800MA LDO VOUT1.05V DROPOUT170MV
auf Bestellung 10000 Stücke:
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TCR8BM11,L3F TCR8BM11,L3F Toshiba Semiconductor and Storage docget.jsp?did=63495&prodName=TCR8BM11 Description: 800MA LDO VOUT1.1V DROPOUT170MV
auf Bestellung 10000 Stücke:
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TCR8BM12,L3F TCR8BM12,L3F Toshiba Semiconductor and Storage TCR8BM12_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM12 Description: IC REG LINEAR 1.2V 800MA 5DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.26V @ 800mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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SSM3J135TU,LF SSM3J135TU,LF Toshiba Semiconductor and Storage docget.jsp?did=6621&prodName=SSM3J135TU Description: MOSFET P-CH 20V 3A UFM
Produkt ist nicht verfügbar
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SSM3K122TU,LF SSM3K122TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10022&prodName=SSM3K122TU Description: MOSFET N-CH 20V 2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
auf Bestellung 12000 Stücke:
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3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000
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SSM3K127TU,LF SSM3K127TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11045&prodName=SSM3K127TU Description: MOSFET N-CH 30V 2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 1750 Stücke:
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SSM3K131TU,LF SSM3K131TU,LF Toshiba Semiconductor and Storage SSM3K131TU_datasheet_en_20140301.pdf?did=12385&prodName=SSM3K131TU Description: MOSFET N-CH 30V 6A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 27.6mOhm @ 4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
6000+0.25 EUR
9000+0.23 EUR
Mindestbestellmenge: 3000
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SSM3K48FU,LF SSM3K48FU,LF Toshiba Semiconductor and Storage docget.jsp?did=6725&prodName=SSM3K48FU Description: MOSFET N-CH 30V 100MA USM
auf Bestellung 9000 Stücke:
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3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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SSM5H90ATU,LF SSM5H90ATU,LF Toshiba Semiconductor and Storage docget.jsp?did=13824&prodName=SSM5H90ATU Description: SMALL SIGNAL MOSFET N-CH VDSS60V
auf Bestellung 6000 Stücke:
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SSM6J422TU,LF SSM6J422TU,LF Toshiba Semiconductor and Storage SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU Description: MOSFET P-CH 20V 4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 3000 Stücke:
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3000+0.17 EUR
Mindestbestellmenge: 3000
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SSM6K208FE,LF SSM6K208FE,LF Toshiba Semiconductor and Storage docget.jsp?did=11044&prodName=SSM6K208FE Description: MOSFET N-CH 30V 1.9A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Produkt ist nicht verfügbar
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SSM6K407TU,LF SSM6K407TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10949&prodName=SSM6K407TU Description: MOSFET N-CH 60V 2A UF6
auf Bestellung 3000 Stücke:
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SSM6P69NU,LF SSM6P69NU,LF Toshiba Semiconductor and Storage docget.jsp?did=61140&prodName=SSM6P69NU Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 6000 Stücke:
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3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
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1SS321,LF 1SS321,LF Toshiba Semiconductor and Storage 1SS321_datasheet_en_20171026.pdf?did=3312&prodName=1SS321 Description: DIODE SCHOTTKY 10V 50MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
6000+0.06 EUR
15000+0.06 EUR
21000+0.06 EUR
30000+0.05 EUR
Mindestbestellmenge: 3000
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1SS322(TE85L,F) 1SS322(TE85L,F) Toshiba Semiconductor and Storage 1SS322_datasheet_en_20150115.pdf?did=3314&prodName=1SS322 Description: DIODE SCHOTTKY 40V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Produkt ist nicht verfügbar
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1SS385,LF(CT 1SS385,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=3364&prodName=1SS385 Description: DIODE SCHOTTKY 10V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Produkt ist nicht verfügbar
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1SS385FV,L3F 1SS385FV,L3F Toshiba Semiconductor and Storage 1SS385FV_datasheet_en_20140301.pdf?did=4395&prodName=1SS385FV Description: DIODE SCHOTTKY 10V 100MAVESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Produkt ist nicht verfügbar
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RN1702,LF RN1702,LF Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR10KOHM Q1BER10KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 5989 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
56+0.32 EUR
115+0.15 EUR
500+0.13 EUR
1000+0.09 EUR
Mindestbestellmenge: 39
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RN1705,LF RN1705,LF Toshiba Semiconductor and Storage docget.jsp?did=18817&prodName=RN1705 Description: NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 8673 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
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RN1908,LF(CT RN1908,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
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RN2901,LF(CT RN2901,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2901 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6 Stücke:
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RN2906FE,LF(CT RN2906FE,LF(CT Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 3876 Stücke:
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53+0.33 EUR
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RN2907,LF(CT RN2907,LF(CT Toshiba Semiconductor and Storage RN2907_datasheet_en_20211223.pdf?did=18909&prodName=RN2907 Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 4819 Stücke:
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RN2908,LF(CT RN2908,LF(CT Toshiba Semiconductor and Storage RN2908_datasheet_en_20211223.pdf?did=18909&prodName=RN2908 Description: PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
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48+0.37 EUR
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RN2909,LF(CT RN2909,LF(CT Toshiba Semiconductor and Storage RN2909_datasheet_en_20211223.pdf?did=18909&prodName=RN2909 Description: PNPX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 2990 Stücke:
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48+0.37 EUR
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126+0.14 EUR
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RN1418,LF RN1418,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1418 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 2996 Stücke:
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RN2104,LF(CT RN2104,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2104 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 5735 Stücke:
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106+0.17 EUR
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RN2113,LF(CT RN2113,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18854&prodName=RN2113 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
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HN1C01FU-Y,LF HN1C01FU-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19152&prodName=HN1C01FU Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 14987 Stücke:
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53+0.33 EUR
85+0.21 EUR
138+0.13 EUR
500+0.09 EUR
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2SA1362-GR,LF 2SA1362-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19272&prodName=2SA1362 Description: TRANS PNP 15V 0.8A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 8mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 7257 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
54+0.33 EUR
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2SC4117-GR,LF 2SC4117-GR,LF Toshiba Semiconductor and Storage 2SC4117_datasheet_en_20210625.pdf?did=19294&prodName=2SC4117 Description: TRANS NPN 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 14425 Stücke:
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53+0.33 EUR
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2SC6100,LF 2SC6100,LF Toshiba Semiconductor and Storage docget.jsp?did=768&prodName=2SC6100 Description: TRANS NPN 50V 2.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: UFM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 42351 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
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2SC6135,LF 2SC6135,LF Toshiba Semiconductor and Storage 2SC6135_datasheet_en_20170731.pdf?did=22791&prodName=2SC6135 Description: TRANS NPN 50V 1A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 6mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V
Supplier Device Package: UFM
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 3214 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
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TTA1713-GR,LF TTA1713-GR,LF Toshiba Semiconductor and Storage TTA1713_datasheet_en_20180528.pdf?did=61218&prodName=TTA1713 Description: TRANS PNP 45V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 2861 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
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TTA1713-Y,LF TTA1713-Y,LF Toshiba Semiconductor and Storage TTA1713_datasheet_en_20180528.pdf?did=61218&prodName=TTA1713 Description: TRANS PNP 45V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
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114+0.16 EUR
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TAR5S18U(TE85L,F) TAR5S18U(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=764&prodName=TAR5S18U Description: IC REG LINEAR 1.8V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
26+0.69 EUR
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100+0.51 EUR
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TCR2EE125,LM(CT TCR2EE125,LM(CT Toshiba Semiconductor and Storage TCR2EE125_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE125 Description: IC REG LINEAR 1.25V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current
auf Bestellung 34 Stücke:
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29+0.62 EUR
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TCR2EE14,LM(CT TCR2EE14,LM(CT Toshiba Semiconductor and Storage TCR2EE14_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE14 Description: IC REG LINEAR 1.4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE185,LM(CT TCR2EE185,LM(CT Toshiba Semiconductor and Storage TCR2EE185_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE185 Description: IC REG LINEAR 1.85V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
auf Bestellung 6766 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
49+0.36 EUR
60+0.30 EUR
100+0.22 EUR
250+0.18 EUR
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TCR2EE20,LM(CT TCR2EE20,LM(CT Toshiba Semiconductor and Storage TCR2EE20_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE20 Description: IC REG LINEAR 2V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
auf Bestellung 4525 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
129+0.14 EUR
147+0.12 EUR
174+0.10 EUR
250+0.09 EUR
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1000+0.08 EUR
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TCR2EE27,LM(CT TCR2EE27,LM(CT Toshiba Semiconductor and Storage TCR2EE27_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE27 Description: IC REG LINEAR 2.7V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE275,LM(CT TCR2EE275,LM(CT Toshiba Semiconductor and Storage TCR2EE275_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE275 Description: IC REG LINEAR 2.75V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.75V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE305,LM(CT TCR2EE305,LM(CT Toshiba Semiconductor and Storage TCR2EE305_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE305 Description: IC REG LINEAR 3.05V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
49+0.36 EUR
60+0.30 EUR
100+0.22 EUR
250+0.18 EUR
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TCR2EE31,LM(CT TCR2EE31,LM(CT Toshiba Semiconductor and Storage TCR2EE31_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE31 Description: IC REG LINEAR 3.1V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE32,LM(CT TCR2EE32,LM(CT Toshiba Semiconductor and Storage TCR2EE32_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE32 Description: IC REG LINEAR 3.2V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 6081 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
49+0.36 EUR
60+0.30 EUR
100+0.22 EUR
250+0.18 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 29
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TCR2EE335,LM(CT TCR2EE335,LM(CT Toshiba Semiconductor and Storage TCR2EE335_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE335 Description: IC REG LINEAR 3.35V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.35V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE40,LM(CT TCR2EE40,LM(CT Toshiba Semiconductor and Storage TCR2EE40_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE40 Description: IC REG LINEAR 4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
49+0.36 EUR
60+0.30 EUR
100+0.22 EUR
250+0.18 EUR
Mindestbestellmenge: 29
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TCR2LF09,LM(CT docget.jsp?did=28807&prodName=TCR2LF09
TCR2LF09,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 200MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR2LF095,LM(CT docget.jsp?did=28807&prodName=TCR2LF095
TCR2LF095,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.95V 200MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LF105,LM(CT docget.jsp?did=28807&prodName=TCR2LF19
TCR2LF105,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Voltage Dropout (Max): 1.4V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LF11,LM(CT docget.jsp?did=28807&prodName=TCR2LF11
TCR2LF11,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 200MA SMV
Produkt ist nicht verfügbar
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TCR2LF115,LM(CT docget.jsp?did=28807&prodName=TCR2LF115
TCR2LF115,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.15V 200MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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TCR2LF13,LM(CT docget.jsp?did=28807&prodName=TCR2LF13
TCR2LF13,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 200MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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TCR2LF21,LM(CT docget.jsp?did=28807&prodName=TCR2LF21
TCR2LF21,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LF28,LM(CT docget.jsp?did=28807&prodName=TCR2LF28
TCR2LF28,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 200MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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TCR2LF285,LM(CT docget.jsp?did=28807&prodName=TCR2LF285
TCR2LF285,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 200MA LDO VOUT2.85V DROPOUT220MV
Produkt ist nicht verfügbar
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TCR2LF31,LM(CT docget.jsp?did=28807&prodName=TCR2LF31
TCR2LF31,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 200MA LDO VOUT3.1V DROPOUT220MV
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR4DG105,LF TCR4DG105_datasheet_en_20170512.pdf?did=57958&prodName=TCR4DG105
TCR4DG105,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 420MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 420mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.991V @ 420mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR5AM18A,LF docget.jsp?did=58512&prodName=TCR5AM18A
TCR5AM18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: 500MA LDO VOUT1.8V DROPOUT90MV I
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.22 EUR
Mindestbestellmenge: 5000
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TCR8BM10,L3F TCR8BM10_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM10
TCR8BM10,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 800MA 5DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.23V @ 800mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR8BM105,L3F docget.jsp?did=63495&prodName=TCR8BM105
TCR8BM105,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO VOUT1.05V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR8BM11,L3F docget.jsp?did=63495&prodName=TCR8BM11
TCR8BM11,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO VOUT1.1V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR8BM12,L3F TCR8BM12_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM12
TCR8BM12,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.2V 800MA 5DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.26V @ 800mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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SSM3J135TU,LF docget.jsp?did=6621&prodName=SSM3J135TU
SSM3J135TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3A UFM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K122TU,LF docget.jsp?did=10022&prodName=SSM3K122TU
SSM3K122TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000
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SSM3K127TU,LF docget.jsp?did=11045&prodName=SSM3K127TU
SSM3K127TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM3K131TU,LF SSM3K131TU_datasheet_en_20140301.pdf?did=12385&prodName=SSM3K131TU
SSM3K131TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 27.6mOhm @ 4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.25 EUR
9000+0.23 EUR
Mindestbestellmenge: 3000
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SSM3K48FU,LF docget.jsp?did=6725&prodName=SSM3K48FU
SSM3K48FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA USM
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM5H90ATU,LF docget.jsp?did=13824&prodName=SSM5H90ATU
SSM5H90ATU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS60V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6J422TU,LF SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU
SSM6J422TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
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SSM6K208FE,LF docget.jsp?did=11044&prodName=SSM6K208FE
SSM6K208FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Produkt ist nicht verfügbar
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SSM6K407TU,LF docget.jsp?did=10949&prodName=SSM6K407TU
SSM6K407TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2A UF6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6P69NU,LF docget.jsp?did=61140&prodName=SSM6P69NU
SSM6P69NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
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1SS321,LF 1SS321_datasheet_en_20171026.pdf?did=3312&prodName=1SS321
1SS321,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 50MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
15000+0.06 EUR
21000+0.06 EUR
30000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
1SS322(TE85L,F) 1SS322_datasheet_en_20150115.pdf?did=3314&prodName=1SS322
1SS322(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Produkt ist nicht verfügbar
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1SS385,LF(CT docget.jsp?did=3364&prodName=1SS385
1SS385,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SS385FV,L3F 1SS385FV_datasheet_en_20140301.pdf?did=4395&prodName=1SS385FV
1SS385FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MAVESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1702,LF
RN1702,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BER10KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 5989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
56+0.32 EUR
115+0.15 EUR
500+0.13 EUR
1000+0.09 EUR
Mindestbestellmenge: 39
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RN1705,LF docget.jsp?did=18817&prodName=RN1705
RN1705,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 8673 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
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RN1908,LF(CT docget.jsp?did=18826&prodName=RN1908
RN1908,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
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RN2901,LF(CT docget.jsp?did=18907&prodName=RN2901
RN2901,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2906FE,LF(CT RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE
RN2906FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 3876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
136+0.13 EUR
500+0.10 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 53
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RN2907,LF(CT RN2907_datasheet_en_20211223.pdf?did=18909&prodName=RN2907
RN2907,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 4819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
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RN2908,LF(CT RN2908_datasheet_en_20211223.pdf?did=18909&prodName=RN2908
RN2908,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
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RN2909,LF(CT RN2909_datasheet_en_20211223.pdf?did=18909&prodName=RN2909
RN2909,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
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RN1418,LF docget.jsp?did=18796&prodName=RN1418
RN1418,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2104,LF(CT docget.jsp?did=18841&prodName=RN2104
RN2104,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 5735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
57+0.31 EUR
106+0.17 EUR
500+0.11 EUR
1000+0.07 EUR
Mindestbestellmenge: 46
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RN2113,LF(CT docget.jsp?did=18854&prodName=RN2113
RN2113,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
73+0.24 EUR
150+0.12 EUR
500+0.10 EUR
1000+0.07 EUR
Mindestbestellmenge: 50
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HN1C01FU-Y,LF docget.jsp?did=19152&prodName=HN1C01FU
HN1C01FU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 14987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
138+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
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2SA1362-GR,LF docget.jsp?did=19272&prodName=2SA1362
2SA1362-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 15V 0.8A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 8mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 7257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
54+0.33 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
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2SC4117-GR,LF 2SC4117_datasheet_en_20210625.pdf?did=19294&prodName=2SC4117
2SC4117-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 14425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
88+0.20 EUR
142+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
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2SC6100,LF docget.jsp?did=768&prodName=2SC6100
2SC6100,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: UFM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 42351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
28+0.64 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.24 EUR
Mindestbestellmenge: 22
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2SC6135,LF 2SC6135_datasheet_en_20170731.pdf?did=22791&prodName=2SC6135
2SC6135,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 1A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 6mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V
Supplier Device Package: UFM
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 3214 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
32+0.56 EUR
100+0.34 EUR
500+0.31 EUR
1000+0.21 EUR
Mindestbestellmenge: 24
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TTA1713-GR,LF TTA1713_datasheet_en_20180528.pdf?did=61218&prodName=TTA1713
TTA1713-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 45V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 2861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
71+0.25 EUR
114+0.16 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
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TTA1713-Y,LF TTA1713_datasheet_en_20180528.pdf?did=61218&prodName=TTA1713
TTA1713-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 45V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
71+0.25 EUR
114+0.16 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
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TAR5S18U(TE85L,F) docget.jsp?did=764&prodName=TAR5S18U
TAR5S18U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
26+0.69 EUR
28+0.64 EUR
100+0.51 EUR
250+0.48 EUR
Mindestbestellmenge: 22
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TCR2EE125,LM(CT TCR2EE125_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE125
TCR2EE125,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.25V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
Mindestbestellmenge: 29
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TCR2EE14,LM(CT TCR2EE14_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE14
TCR2EE14,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE185,LM(CT TCR2EE185_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE185
TCR2EE185,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.85V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
auf Bestellung 6766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
49+0.36 EUR
60+0.30 EUR
100+0.22 EUR
250+0.18 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 29
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TCR2EE20,LM(CT TCR2EE20_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE20
TCR2EE20,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
auf Bestellung 4525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
129+0.14 EUR
147+0.12 EUR
174+0.10 EUR
250+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 91
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TCR2EE27,LM(CT TCR2EE27_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE27
TCR2EE27,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.7V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE275,LM(CT TCR2EE275_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE275
TCR2EE275,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.75V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.75V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE305,LM(CT TCR2EE305_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE305
TCR2EE305,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.05V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
49+0.36 EUR
60+0.30 EUR
100+0.22 EUR
250+0.18 EUR
Mindestbestellmenge: 29
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TCR2EE31,LM(CT TCR2EE31_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE31
TCR2EE31,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR2EE32,LM(CT TCR2EE32_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE32
TCR2EE32,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 6081 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
49+0.36 EUR
60+0.30 EUR
100+0.22 EUR
250+0.18 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
TCR2EE335,LM(CT TCR2EE335_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE335
TCR2EE335,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.35V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.35V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR2EE40,LM(CT TCR2EE40_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE40
TCR2EE40,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
49+0.36 EUR
60+0.30 EUR
100+0.22 EUR
250+0.18 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
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