Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13523) > Seite 129 nach 226
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TK3R3A06PL,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 700µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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TK49N65W5,S1F | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORInput Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4.5V @ 2.5mA Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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TK3R2A10PL,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
auf Bestellung 1264 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6R7A10PL,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN5R203PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 38A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V Power Dissipation (Max): 610mW (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK28N65W5,S1F | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.6mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1R405PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 120A 8SOPCurrent - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.4V @ 500µA Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TK7R4A10PL,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TK4R1A10PL,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R003PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.1V @ 500µA Power Dissipation (Max): 830mW (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK110E10PL,S1X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
auf Bestellung 5516 Stücke: Lieferzeit 10-14 Tag (e) |
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TK3R2E06PL,S1X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 168W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 700µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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TK49N65W,S1F | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TO2Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 3.5V @ 2.5mA Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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TK3R9E10PL,S1X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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TK5R3A06PL,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TPCA8047-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 32A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 500µA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH2R003PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.1V @ 500µA Power Dissipation (Max): 830mW (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 10602 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN5R203PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 38A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V Power Dissipation (Max): 610mW (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V |
auf Bestellung 19796 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1R405PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 120A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.4V @ 500µA Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 4136 Stücke: Lieferzeit 10-14 Tag (e) |
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TPCA8052-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 200µA Power Dissipation (Max): 1.6W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPCA8047-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 32A 8SOP Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 500µA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPCA8052-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 200µA Power Dissipation (Max): 1.6W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC78H651AFNG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED DC MOTOR DRIVER, DUAL-CHPart Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: 16-TSSOP Voltage - Load: 1.8V ~ 7.5V Technology: DMOS Applications: General Purpose Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 2A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC78H651AFNG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED DC MOTOR DRIVER, DUAL-CHPart Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: 16-TSSOP Voltage - Load: 1.8V ~ 7.5V Technology: DMOS Applications: General Purpose Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 2A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2714 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B5M4ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.15pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B5M4ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.15pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
auf Bestellung 24643 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLP250(LF5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLP785(F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANSCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Output Type: Transistor Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TLP624-4(BV,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP250F(D4INV-T4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLP785F(D4BLT7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPCurrent Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TLP352F(D4-TP4,S) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TORX1850(MEIDEN,F) | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVING MODULE Part Status: Obsolete Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP700AF(D4-TP,6) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP250(D4-FA-TP1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP250(D4-TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLP250HF(D4-TP4,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 8-SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 5mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 40kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 2 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TLP161J(T5TL,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP627F-2(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLP250HF(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 8-DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Push-Pull, Totem Pole Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 5mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 40kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 2 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP5701(LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPart Status: Active Packaging: Tube Current - Output High, Low: 400mA, 400mA Technology: Optical Coupling Current - Peak Output: 600mA Voltage - Forward (Vf) (Typ): 1.57V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Pulse Width Distortion (Max): 350ns Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 50ns, 50ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLP250(D4-TP5,NP,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP627-4(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP250F(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP250(D4-SANYD,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP351F(TP4,Z,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLP250HF(D4-LF4,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 8-SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 5mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 40kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 2 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TLP250H(TP5,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 8-SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 40kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 2 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP250(D4-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP785(D4-LF6,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPVoltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP120(HO-GB,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP250(FANUC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP161J(T5TR,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLP250HF(TP4,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 8-SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 5mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 40kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 2 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP2768A(E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV OPEN COLLECTOR 6-SOCurrent - Output / Channel: 25 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 30ns, 30ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 20MBd Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tube |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLP250(D4INV-LF5,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP624-4(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP161J(V4DMT7TRCF | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP2719(D4-TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV OPEN COLL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 20V Voltage - Forward (Vf) (Typ): 1.6V Data Rate: 1MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 800ns, 800ns Number of Channels: 1 Current - Output / Channel: 8 mA |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLP250(D4-SIEM,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TK3R3A06PL,S4X |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.94 EUR |
| TK49N65W5,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.97 EUR |
| 30+ | 14.13 EUR |
| TK3R2A10PL,S4X |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 1264 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.38 EUR |
| 50+ | 4.3 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.2 EUR |
| 1000+ | 2.98 EUR |
| TK6R7A10PL,S4X |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.14 EUR |
| TPN5R203PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.45 EUR |
| TK28N65W5,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.03 EUR |
| 30+ | 7.46 EUR |
| TPH1R405PL,L1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Description: MOSFET N-CH 45V 120A 8SOP
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TK7R4A10PL,S4X |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TK4R1A10PL,S4X |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.46 EUR |
| TPH2R003PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.79 EUR |
| 6000+ | 0.74 EUR |
| TK110E10PL,S1X |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 5516 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.47 EUR |
| 50+ | 1.65 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.07 EUR |
| 2000+ | 0.99 EUR |
| 5000+ | 0.89 EUR |
| TK3R2E06PL,S1X |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.77 EUR |
| TK49N65W,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO2
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: PB-F POWER MOSFET TRANSISTOR TO2
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.23 EUR |
| 30+ | 15.37 EUR |
| TK3R9E10PL,S1X |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.51 EUR |
| TK5R3A06PL,S4X |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.94 EUR |
| 50+ | 1.9 EUR |
| TPCA8047-H(T2L1,VM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 32A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 32A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH2R003PL,LQ |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 10602 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 11+ | 1.92 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.93 EUR |
| TPN5R203PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
Description: MOSFET N-CH 30V 38A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 19796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.14 EUR |
| 16+ | 1.33 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
| TPH1R405PL,L1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 45V 120A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4136 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.13 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.31 EUR |
| 2000+ | 1.2 EUR |
| TPCA8052-H(T2L1,VM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8047-H(T2L1,VM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 32A 8SOP
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Description: MOSFET N-CH 40V 32A 8SOP
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8052-H(T2L1,VM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 20A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TC78H651AFNG,EL |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-TSSOP
Voltage - Load: 1.8V ~ 7.5V
Technology: DMOS
Applications: General Purpose
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-TSSOP
Voltage - Load: 1.8V ~ 7.5V
Technology: DMOS
Applications: General Purpose
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TC78H651AFNG,EL |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-TSSOP
Voltage - Load: 1.8V ~ 7.5V
Technology: DMOS
Applications: General Purpose
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-TSSOP
Voltage - Load: 1.8V ~ 7.5V
Technology: DMOS
Applications: General Purpose
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2714 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.75 EUR |
| 10+ | 2.33 EUR |
| 25+ | 1.96 EUR |
| 100+ | 1.54 EUR |
| 250+ | 1.33 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.09 EUR |
| DF2B5M4ASL,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.11 EUR |
| 20000+ | 0.098 EUR |
| DF2B5M4ASL,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 24643 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 0.61 EUR |
| 57+ | 0.37 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| 5000+ | 0.12 EUR |
| TLP250(LF5,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP785(F |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Output Type: Transistor
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Output Type: Transistor
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP624-4(BV,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250F(D4INV-T4,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP785F(D4BLT7,F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP352F(D4-TP4,S) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TORX1850(MEIDEN,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Part Status: Obsolete
Packaging: Tray
Description: IC TRANSCEIVING MODULE
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250(D4-FA-TP1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250(D4-TP4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250HF(D4-TP4,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP161J(T5TL,U,C,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP627F-2(D4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250HF(F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Description: OPTOISO 3.75KV PUSH PULL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP5701(LF4,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Part Status: Active
Packaging: Tube
Current - Output High, Low: 400mA, 400mA
Technology: Optical Coupling
Current - Peak Output: 600mA
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 350ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Part Status: Active
Packaging: Tube
Current - Output High, Low: 400mA, 400mA
Technology: Optical Coupling
Current - Peak Output: 600mA
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 350ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.53 EUR |
| 12+ | 1.78 EUR |
| 125+ | 1.31 EUR |
| TLP250(D4-TP5,NP,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP627-4(LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250F(D4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250(D4-SANYD,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP351F(TP4,Z,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250HF(D4-LF4,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250H(TP5,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250(D4-TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP785(D4-LF6,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250(FANUC,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP161J(T5TR,U,C,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP250HF(TP4,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP2768A(E |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 20MBd
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 20MBd
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 13+ | 1.7 EUR |
| TLP250(D4INV-LF5,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP624-4(LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP161J(V4DMT7TRCF |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP2719(D4-TP4,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV OPEN COLL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOISOLTR 5KV OPEN COLL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.24 EUR |
| TLP250(D4-SIEM,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH













