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TCR2EE50,LM(CT TCR2EE50,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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1SS361,LJ(CT 1SS361,LJ(CT Toshiba Semiconductor and Storage 1SS361_datasheet_en_20211013.pdf?did=3336&prodName=1SS361 Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 1012 Stücke:
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50+0.42 EUR
79+0.26 EUR
127+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN1102,LF(CT RN1102,LF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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RN1102MFV,L3F RN1102MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 25459 Stücke:
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53+0.39 EUR
86+0.25 EUR
138+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.087 EUR
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RN1105,LF(CT RN1105,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1105 Description: TRANS PREBIAS NPN 50V 0.1W SSM
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RN1106,LF(CT RN1106,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1105 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 1599 Stücke:
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85+0.25 EUR
136+0.15 EUR
500+0.11 EUR
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RN1408,LF(B RN1408,LF(B Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1408 Description: TRANS PREBIAS NPN 50V 0.2W SMINI
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RN1409,LF RN1409,LF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1409 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 14443 Stücke:
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107+0.2 EUR
173+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
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RN1902,LF(CT RN1902,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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RN1904,LF(CT RN1904,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902 Description: TRANS 2NPN PREBIAS 0.2W US6
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RN1905,LF(CT RN1905,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 4937 Stücke:
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43+0.49 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.12 EUR
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RN1905FE,LF(CB RN1905FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 10961 Stücke:
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RN1906,LF(CT RN1906,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1906 Description: TRANS 2NPN PREBIAS 0.2W US6
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RN1910FE,LF(CT RN1910FE,LF(CT Toshiba Semiconductor and Storage RN1910FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1910FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 4750 Stücke:
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40+0.52 EUR
60+0.36 EUR
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500+0.14 EUR
1000+0.1 EUR
2000+0.087 EUR
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RN2107,LF(CB RN2107,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8975 Stücke:
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RN2110,LF(CB RN2110,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110 Description: TRANS PREBIAS PNP 50V 0.1W SSM
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RN2111,LF(CB RN2111,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8968 Stücke:
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RN2112,LF(CB RN2112,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 9000 Stücke:
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RN2115,LF(CB RN2115,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 50V 0.1W SSM
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RN2116,LF(CB RN2116,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8940 Stücke:
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RN2409,LF(B RN2409,LF(B Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2407 Description: TRANS PREBIAS PNP 50V 0.2W SMINI
auf Bestellung 8975 Stücke:
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RN2902,LF(CT RN2902,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 33038 Stücke:
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35+0.61 EUR
42+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
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RN2902FE,LF(CT RN2902FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.2W ES6
Produkt ist nicht verfügbar
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RN2903,LF(CT RN2903,LF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS PREBIAS 2PNP 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 2990 Stücke:
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48+0.44 EUR
77+0.27 EUR
124+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN2904,LF(CT RN2904,LF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
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40+0.52 EUR
58+0.36 EUR
119+0.18 EUR
500+0.14 EUR
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RN2904FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2904FE Description: TRANS PREBIAS 2PNP 50V 100MW ES6
Produkt ist nicht verfügbar
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RN2906,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2906 Description: TRANS PREBIAS 2PNP 50V 0.2W US6
Produkt ist nicht verfügbar
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RN2907FE,LF(CT RN2907FE,LF(CT Toshiba Semiconductor and Storage RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
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48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.093 EUR
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RN2910FE,LF(CB RN2910FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2910FE Description: TRANS 2PNP PREBIAS 0.1W ES6
auf Bestellung 11949 Stücke:
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RN2911,LF(CT RN2911,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2910 Description: TRANS 2PNP PREBIAS 0.2W US6
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RN4901,LF(CT RN4901,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4901 Description: TRANS NPN/PNP PREBIAS 0.2W US6
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RN4902FE,LF(CT RN4902FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19020&prodName=RN4902FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
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36+0.58 EUR
44+0.49 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
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RN4904,LF(CT RN4904,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4904 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 5940 Stücke:
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RN4904FE,LF(CB RN4904FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4904FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 7600 Stücke:
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RN4905,LF(CT RN4905,LF(CT Toshiba Semiconductor and Storage RN4905_datasheet_en_20210824.pdf?did=18956&prodName=RN4905 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 50V
auf Bestellung 2998 Stücke:
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40+0.52 EUR
65+0.32 EUR
105+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
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RN4905FE,LF(CT RN4905FE,LF(CT Toshiba Semiconductor and Storage RN4905FE_datasheet_en_20210818.pdf?did=19136&prodName=RN4905FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
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46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
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RN4906,LF(CT RN4906,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4906 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 5860 Stücke:
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RN4906FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4906FE Description: TRANS PREBIAS NPN/PNP 50V ES6
Produkt ist nicht verfügbar
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RN4907,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4907 Description: TRANS PREBIAS NPN/PNP 50V US6
Produkt ist nicht verfügbar
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RN4907FE,LF(CT RN4907FE,LF(CT Toshiba Semiconductor and Storage RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 1760 Stücke:
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RN4910,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4910 Description: TRANS PREBIAS NPN/PNP 50V US6
Produkt ist nicht verfügbar
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RN4981FE,LF(CB RN4981FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4981FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
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RN4983,LF(CT RN4983,LF(CT Toshiba Semiconductor and Storage RN4983_datasheet_en_20210824.pdf?did=18976&prodName=RN4983 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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RN4984,LF(CT RN4984,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984 Description: TRANS NPN/PNP PREBIAS 0.2W US6
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RN4984FE,LF(CT RN4984FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19048&prodName=RN4984FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
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RN4986FE,LF(CB RN4986FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4986FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
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RN4987,LF(CT RN4987,LF(CT Toshiba Semiconductor and Storage RN4987_datasheet_en_20210824.pdf?did=18985&prodName=RN4987 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2396 Stücke:
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RN4987FE,LF(CB RN4987FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4987FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
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RN4990FE,LF(CB RN4990FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4990FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
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TC7SET126F,LJ(CB TC7SET126F,LJ(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SET126F Description: IC BUS BUFFER 3-ST TTL 5-SSOP
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TC7SET17FU,LJ(CT TC7SET17FU,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=53724&prodName=TC7SET17FU Description: IC BUFFER NON-INVERT 5.5V USV
Supplier Device Package: 5-SSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 17089 Stücke:
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TC7SET34FU,LJ(CB TC7SET34FU,LJ(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SET34FU Description: IC NON-INVERTER TTL 5-SSOP
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TC7SH02F,LJ(CT TC7SH02F,LJ(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH02F Description: IC GATE NOR 2-INPUT 5-SSOP
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TC7SH04FU,LJ(CT TC7SH04FU,LJ(CT Toshiba Semiconductor and Storage TC7SH04FU_datasheet_en_20170516.pdf?did=30515&prodName=TC7SH04FU Description: IC INVERTER 1CH 1-INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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67+0.31 EUR
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111+0.19 EUR
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TC7SH08F,LJ(CT TC7SH08F,LJ(CT Toshiba Semiconductor and Storage TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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84+0.25 EUR
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136+0.15 EUR
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TC7SH125F,LJ(CT TC7SH125F,LJ(CT Toshiba Semiconductor and Storage TC7SH125F_datasheet_en_20171221.pdf?did=435&prodName=TC7SH125F Description: IC BUFFER NON-INVERT 5.5V SMV
Supplier Device Package: SMV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 3432 Stücke:
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TC7SH126FU,LJ(CT TC7SH126FU,LJ(CT Toshiba Semiconductor and Storage TC7SH126FU_datasheet_en_20170516.pdf?did=30217&prodName=TC7SH126FU Description: IC BUFFER NON-INVERT 5.5V USV
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 7353 Stücke:
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35+0.61 EUR
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TC7SH14F,LJ(CT TC7SH14F,LJ(CT Toshiba Semiconductor and Storage TC7SH14F_datasheet_en_20171221.pdf?did=20112&prodName=TC7SH14F Description: IC INVERT SCHMITT 1CH 1-INP SMV
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: SMV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
auf Bestellung 598 Stücke:
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84+0.25 EUR
124+0.17 EUR
143+0.14 EUR
169+0.12 EUR
250+0.11 EUR
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TC7SH17FU,LJ(CB TC7SH17FU,LJ(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH17FU Description: IC BUFFER SCHMITT 5-SSOP
auf Bestellung 2902 Stücke:
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TC7SH32F,LJ(CT TC7SH32F,LJ(CT Toshiba Semiconductor and Storage TC7SH32FU_datasheet_en_20170516.pdf?did=30319&prodName=TC7SH32FU Description: IC GATE OR 1CH 2-INP SMV
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: SMV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 5918 Stücke:
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TCR2EE50,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE50,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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1SS361,LJ(CT 1SS361_datasheet_en_20211013.pdf?did=3336&prodName=1SS361
1SS361,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 1012 Stücke:
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50+0.42 EUR
79+0.26 EUR
127+0.17 EUR
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RN1102,LF(CT
RN1102,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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RN1102MFV,L3F docget.jsp?did=5879&prodName=RN1102MFV
RN1102MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 25459 Stücke:
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53+0.39 EUR
86+0.25 EUR
138+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.087 EUR
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RN1105,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1105
RN1105,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1W SSM
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RN1106,LF(CT docget.jsp?did=18746&prodName=RN1105
RN1106,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 1599 Stücke:
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AnzahlPrivatkunde
53+0.39 EUR
85+0.25 EUR
136+0.15 EUR
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RN1408,LF(B docget.jsp?type=datasheet&lang=en&pid=RN1408
RN1408,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.2W SMINI
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RN1409,LF docget.jsp?did=18789&prodName=RN1409
RN1409,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 14443 Stücke:
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67+0.31 EUR
107+0.2 EUR
173+0.12 EUR
500+0.088 EUR
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RN1902,LF(CT RN190x.pdf
RN1902,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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RN1904,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1902
RN1904,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 8975 Stücke:
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RN1905,LF(CT RN190x.pdf
RN1905,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 4937 Stücke:
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36+0.58 EUR
43+0.49 EUR
100+0.26 EUR
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RN1905FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1905FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 10961 Stücke:
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RN1906,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1906
RN1906,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5680 Stücke:
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RN1910FE,LF(CT RN1910FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1910FE
RN1910FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 4750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
60+0.36 EUR
122+0.17 EUR
500+0.14 EUR
1000+0.1 EUR
2000+0.087 EUR
Mindestbestellmenge: 40 Stücke
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RN2107,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2107
RN2107,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8975 Stücke:
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RN2110,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2110
RN2110,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 2950 Stücke:
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RN2111,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2110
RN2111,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8968 Stücke:
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RN2112,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2112
RN2112,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 9000 Stücke:
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RN2115,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2115,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 9000 Stücke:
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RN2116,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2116,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8940 Stücke:
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RN2409,LF(B docget.jsp?type=datasheet&lang=en&pid=RN2407
RN2409,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.2W SMINI
auf Bestellung 8975 Stücke:
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RN2902,LF(CT docget.jsp?did=18907&prodName=RN2906
RN2902,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 33038 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
42+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
Mindestbestellmenge: 35 Stücke
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RN2902FE,LF(CT docget.jsp?did=19092&prodName=RN2906FE
RN2902FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2903,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
77+0.27 EUR
124+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 48 Stücke
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RN2904,LF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2904,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
58+0.36 EUR
119+0.18 EUR
500+0.14 EUR
1000+0.1 EUR
Mindestbestellmenge: 40 Stücke
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RN2904FE,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN2904FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MW ES6
Produkt ist nicht verfügbar
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RN2906,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN2906
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 0.2W US6
Produkt ist nicht verfügbar
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RN2907FE,LF(CT RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE
RN2907FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.093 EUR
Mindestbestellmenge: 48 Stücke
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RN2910FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2910FE
RN2910FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
auf Bestellung 11949 Stücke:
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RN2911,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN2910
RN2911,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
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RN4901,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4901
RN4901,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 5900 Stücke:
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RN4902FE,LF(CT docget.jsp?did=19020&prodName=RN4902FE
RN4902FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
44+0.49 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 36 Stücke
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RN4904,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4904
RN4904,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4904FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4904FE
RN4904FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 7600 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4905,LF(CT RN4905_datasheet_en_20210824.pdf?did=18956&prodName=RN4905
RN4905,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 50V
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
65+0.32 EUR
105+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
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RN4905FE,LF(CT RN4905FE_datasheet_en_20210818.pdf?did=19136&prodName=RN4905FE
RN4905FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 46 Stücke
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RN4906,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4906
RN4906,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 5860 Stücke:
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RN4906FE,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4906FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN/PNP 50V ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4907,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4907
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN/PNP 50V US6
Produkt ist nicht verfügbar
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RN4907FE,LF(CT RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE
RN4907FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 1760 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 48 Stücke
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RN4910,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4910
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN/PNP 50V US6
Produkt ist nicht verfügbar
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RN4981FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4981FE
RN4981FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3975 Stücke:
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RN4983,LF(CT RN4983_datasheet_en_20210824.pdf?did=18976&prodName=RN4983
RN4983,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
45+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.13 EUR
Mindestbestellmenge: 31 Stücke
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RN4984,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4984
RN4984,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
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RN4984FE,LF(CT docget.jsp?did=19048&prodName=RN4984FE
RN4984FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
45+0.48 EUR
Mindestbestellmenge: 36 Stücke
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RN4986FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4986FE
RN4986FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3450 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4987,LF(CT RN4987_datasheet_en_20210824.pdf?did=18985&prodName=RN4987
RN4987,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2396 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
45+0.48 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.13 EUR
Mindestbestellmenge: 31 Stücke
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RN4987FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4987FE
RN4987FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 11500 Stücke:
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RN4990FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4990FE
RN4990FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 10900 Stücke:
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TC7SET126F,LJ(CB docget.jsp?type=datasheet&lang=en&pid=TC7SET126F
TC7SET126F,LJ(CB
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER 3-ST TTL 5-SSOP
auf Bestellung 8830 Stücke:
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TC7SET17FU,LJ(CT docget.jsp?did=53724&prodName=TC7SET17FU
TC7SET17FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Supplier Device Package: 5-SSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 17089 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
44+0.48 EUR
50+0.42 EUR
100+0.27 EUR
250+0.23 EUR
500+0.18 EUR
1000+0.14 EUR
Mindestbestellmenge: 33 Stücke
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TC7SET34FU,LJ(CB docget.jsp?type=datasheet&lang=en&pid=TC7SET34FU
TC7SET34FU,LJ(CB
Hersteller: Toshiba Semiconductor and Storage
Description: IC NON-INVERTER TTL 5-SSOP
auf Bestellung 5223 Stücke:
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TC7SH02F,LJ(CT docget.jsp?type=datasheet&lang=en&pid=TC7SH02F
TC7SH02F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2-INPUT 5-SSOP
auf Bestellung 5609 Stücke:
Lieferzeit 10-14 Tag (e)
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TC7SH04FU,LJ(CT TC7SH04FU_datasheet_en_20170516.pdf?did=30515&prodName=TC7SH04FU
TC7SH04FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 40819 Stücke:
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AnzahlPrivatkunde
40+0.52 EUR
67+0.31 EUR
83+0.25 EUR
111+0.19 EUR
250+0.15 EUR
500+0.13 EUR
1000+0.12 EUR
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TC7SH08F,LJ(CT TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU
TC7SH08F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 7713 Stücke:
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84+0.25 EUR
120+0.18 EUR
136+0.15 EUR
161+0.13 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.11 EUR
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TC7SH125F,LJ(CT TC7SH125F_datasheet_en_20171221.pdf?did=435&prodName=TC7SH125F
TC7SH125F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Supplier Device Package: SMV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 3432 Stücke:
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30+0.71 EUR
50+0.42 EUR
62+0.35 EUR
100+0.25 EUR
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500+0.19 EUR
1000+0.17 EUR
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TC7SH126FU,LJ(CT TC7SH126FU_datasheet_en_20170516.pdf?did=30217&prodName=TC7SH126FU
TC7SH126FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 7353 Stücke:
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35+0.61 EUR
61+0.35 EUR
74+0.29 EUR
100+0.21 EUR
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TC7SH14F,LJ(CT TC7SH14F_datasheet_en_20171221.pdf?did=20112&prodName=TC7SH14F
TC7SH14F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1-INP SMV
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: SMV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
auf Bestellung 598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
124+0.17 EUR
143+0.14 EUR
169+0.12 EUR
250+0.11 EUR
500+0.11 EUR
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TC7SH17FU,LJ(CB docget.jsp?type=datasheet&lang=en&pid=TC7SH17FU
TC7SH17FU,LJ(CB
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER SCHMITT 5-SSOP
auf Bestellung 2902 Stücke:
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TC7SH32F,LJ(CT TC7SH32FU_datasheet_en_20170516.pdf?did=30319&prodName=TC7SH32FU
TC7SH32F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: SMV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 5918 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
40+0.52 EUR
45+0.48 EUR
100+0.33 EUR
250+0.27 EUR
500+0.23 EUR
1000+0.18 EUR
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