Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13261) > Seite 88 nach 222
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RN4907,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.2W US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4910,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN1905,LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 5950 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1906,LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 5840 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2911,LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 |
auf Bestellung 5991 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4901,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN4902,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4906,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 5980 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1A01FE-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Part Status: Active |
Produkt ist nicht verfügbar |
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HN1A01FU-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1905,LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1906,LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1907,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
Produkt ist nicht verfügbar |
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RN2902,LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN2903,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
Produkt ist nicht verfügbar |
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RN2904,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
Produkt ist nicht verfügbar |
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RN2906,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2911,LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4901,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN4902,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4904,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4906,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4907,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4910,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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TC7SET126FU,LJ | Toshiba Semiconductor and Storage | Description: IC BUFF/DVR SNGL N-INV USV |
auf Bestellung 5880 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SH00FU,LJ | Toshiba Semiconductor and Storage | Description: IC GATE NAND 1CH 2-INP USV |
auf Bestellung 2928 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SH02FU,LJ | Toshiba Semiconductor and Storage | Description: IC GATE NOR 1CH 2-INP USV |
Produkt ist nicht verfügbar |
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TC7SH04FU,LJ | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
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TC7SH08FU,LJ | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP USV Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
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TC7SH14FU,LJ | Toshiba Semiconductor and Storage | Description: IC INVERTER SCHMT TRG SNGL USV |
Produkt ist nicht verfügbar |
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TC7SZ04FU,LJ | Toshiba Semiconductor and Storage | Description: IC INVERTER SINGLE USV |
Produkt ist nicht verfügbar |
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TC7SZ08F,LJ | Toshiba Semiconductor and Storage | Description: IC GATE AND 1CH 2-INP SMV |
auf Bestellung 5890 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SET126FU,LJ | Toshiba Semiconductor and Storage | Description: IC BUFF/DVR SNGL N-INV USV |
auf Bestellung 5880 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SH00FU,LJ | Toshiba Semiconductor and Storage | Description: IC GATE NAND 1CH 2-INP USV |
Produkt ist nicht verfügbar |
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TC7SH14FU,LJ | Toshiba Semiconductor and Storage | Description: IC INVERTER SCHMT TRG SNGL USV |
Produkt ist nicht verfügbar |
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TC7SZ04FU,LJ | Toshiba Semiconductor and Storage | Description: IC INVERTER SINGLE USV |
Produkt ist nicht verfügbar |
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TC7SZ08F,LJ | Toshiba Semiconductor and Storage | Description: IC GATE AND 1CH 2-INP SMV |
Produkt ist nicht verfügbar |
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TC7SET126FU,LJ | Toshiba Semiconductor and Storage | Description: IC BUFF/DVR SNGL N-INV USV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SH00FU,LJ | Toshiba Semiconductor and Storage | Description: IC GATE NAND 1CH 2-INP USV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SH02FU,LJ | Toshiba Semiconductor and Storage | Description: IC GATE NOR 1CH 2-INP USV |
Produkt ist nicht verfügbar |
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TC7SH04FU,LJ | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
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TC7SH08FU,LJ | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
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TC7SH14FU,LJ | Toshiba Semiconductor and Storage | Description: IC INVERTER SCHMT TRG SNGL USV |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SZ04FU,LJ | Toshiba Semiconductor and Storage | Description: IC INVERTER SINGLE USV |
Produkt ist nicht verfügbar |
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TC7SZ08F,LJ | Toshiba Semiconductor and Storage | Description: IC GATE AND 1CH 2-INP SMV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS403,H3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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CCS15S30,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 1.5A CST2C Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: CST2C Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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CCS15S30,L3IDTF | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 20V 1.5A CST2C |
Produkt ist nicht verfügbar |
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CCS15S30,L3QUF | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 20V 1.5A CST2C |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B6.8ACT,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 5V 7V CST2 |
auf Bestellung 170000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B6.8AFS,L3M | Toshiba Semiconductor and Storage | Description: TVS DIODE 5V 7V FSC |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2EN10,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 1V 0.2A 4SDFN |
Produkt ist nicht verfügbar |
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TCR2EN105,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 1.05V 0.2A 4SDFN |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2EN11,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.1V 200MA 4SDFN |
Produkt ist nicht verfügbar |
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TCR2EN19,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 1.9V 0.2A 4SDFN |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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CCS15S30,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 1.5A CST2C Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: CST2C Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
auf Bestellung 38695 Stücke: Lieferzeit 10-14 Tag (e) |
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CCS15S30,L3IDTF | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 20V 1.5A CST2C |
Produkt ist nicht verfügbar |
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CCS15S30,L3QUF | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 20V 1.5A CST2C |
auf Bestellung 18860 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B6.8ACT,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 5V 7V CST2 |
auf Bestellung 176980 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B6.8AFS,L3M | Toshiba Semiconductor and Storage | Description: TVS DIODE 5V 7V FSC |
auf Bestellung 48878 Stücke: Lieferzeit 10-14 Tag (e) |
RN4907,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
59+ | 0.3 EUR |
120+ | 0.15 EUR |
500+ | 0.12 EUR |
1000+ | 0.085 EUR |
RN4910,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN1905,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)RN1906,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5840 Stücke:
Lieferzeit 10-14 Tag (e)RN2911,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 5991 Stücke:
Lieferzeit 10-14 Tag (e)RN4901,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4902,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)RN4906,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)HN1A01FE-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Description: TRANS 2PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
HN1A01FU-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2PNP 50V 0.15A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.072 EUR |
RN1905,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)RN1906,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)RN1907,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN2902,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN2903,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN2904,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN2906,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.075 EUR |
RN2911,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)RN4901,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4902,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)RN4904,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.075 EUR |
RN4906,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)RN4907,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.074 EUR |
6000+ | 0.069 EUR |
RN4910,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
TC7SET126FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF/DVR SNGL N-INV USV
Description: IC BUFF/DVR SNGL N-INV USV
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)TC7SH00FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
Description: IC GATE NAND 1CH 2-INP USV
auf Bestellung 2928 Stücke:
Lieferzeit 10-14 Tag (e)TC7SH02FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP USV
Description: IC GATE NOR 1CH 2-INP USV
Produkt ist nicht verfügbar
TC7SH04FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TC7SH08FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 2-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TC7SH14FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SCHMT TRG SNGL USV
Description: IC INVERTER SCHMT TRG SNGL USV
Produkt ist nicht verfügbar
TC7SZ04FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SINGLE USV
Description: IC INVERTER SINGLE USV
Produkt ist nicht verfügbar
TC7SZ08F,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Description: IC GATE AND 1CH 2-INP SMV
auf Bestellung 5890 Stücke:
Lieferzeit 10-14 Tag (e)TC7SET126FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF/DVR SNGL N-INV USV
Description: IC BUFF/DVR SNGL N-INV USV
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)TC7SH00FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
Description: IC GATE NAND 1CH 2-INP USV
Produkt ist nicht verfügbar
TC7SH14FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SCHMT TRG SNGL USV
Description: IC INVERTER SCHMT TRG SNGL USV
Produkt ist nicht verfügbar
TC7SZ04FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SINGLE USV
Description: IC INVERTER SINGLE USV
Produkt ist nicht verfügbar
TC7SZ08F,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Description: IC GATE AND 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC7SET126FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF/DVR SNGL N-INV USV
Description: IC BUFF/DVR SNGL N-INV USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)TC7SH00FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
Description: IC GATE NAND 1CH 2-INP USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)TC7SH02FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP USV
Description: IC GATE NOR 1CH 2-INP USV
Produkt ist nicht verfügbar
TC7SH04FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TC7SH08FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 2-INP USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TC7SH14FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SCHMT TRG SNGL USV
Description: IC INVERTER SCHMT TRG SNGL USV
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)TC7SZ04FU,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SINGLE USV
Description: IC INVERTER SINGLE USV
Produkt ist nicht verfügbar
TC7SZ08F,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Description: IC GATE AND 1CH 2-INP SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)1SS403,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.098 EUR |
6000+ | 0.091 EUR |
9000+ | 0.075 EUR |
CCS15S30,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: CST2C
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: CST2C
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.11 EUR |
CCS15S30,L3IDTF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Produkt ist nicht verfügbar
CCS15S30,L3QUF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Description: DIODE SCHOTTKY 20V 1.5A CST2C
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)DF2B6.8ACT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5V 7V CST2
Description: TVS DIODE 5V 7V CST2
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)DF2B6.8AFS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5V 7V FSC
Description: TVS DIODE 5V 7V FSC
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)TCR2EN10,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1V 0.2A 4SDFN
Description: IC REG LDO 1V 0.2A 4SDFN
Produkt ist nicht verfügbar
TCR2EN105,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.05V 0.2A 4SDFN
Description: IC REG LDO 1.05V 0.2A 4SDFN
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)TCR2EN11,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 200MA 4SDFN
Description: IC REG LINEAR 1.1V 200MA 4SDFN
Produkt ist nicht verfügbar
TCR2EN19,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.9V 0.2A 4SDFN
Description: IC REG LDO 1.9V 0.2A 4SDFN
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)CCS15S30,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: CST2C
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: CST2C
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 38695 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
43+ | 0.41 EUR |
100+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
2000+ | 0.13 EUR |
CCS15S30,L3IDTF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Produkt ist nicht verfügbar
CCS15S30,L3QUF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1.5A CST2C
Description: DIODE SCHOTTKY 20V 1.5A CST2C
auf Bestellung 18860 Stücke:
Lieferzeit 10-14 Tag (e)DF2B6.8ACT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5V 7V CST2
Description: TVS DIODE 5V 7V CST2
auf Bestellung 176980 Stücke:
Lieferzeit 10-14 Tag (e)DF2B6.8AFS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5V 7V FSC
Description: TVS DIODE 5V 7V FSC
auf Bestellung 48878 Stücke:
Lieferzeit 10-14 Tag (e)