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DF3A6.8UFU,LF DF3A6.8UFU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.8UFU Description: TVS DIODE 5VWM USM
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
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DF3A6.8UFU,LF DF3A6.8UFU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.8UFU Description: TVS DIODE 5VWM USM
auf Bestellung 1492 Stücke:
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DF3A6.8UFU,LF DF3A6.8UFU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.8UFU Description: TVS DIODE 5VWM USM
auf Bestellung 1492 Stücke:
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DF3S6.8ECT(TPL3) DF3S6.8ECT(TPL3) Toshiba Semiconductor and Storage DF3S6.8ECT.pdf Description: TVS DIODE 5VWM CST3
Produkt ist nicht verfügbar
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DF3S6.8ECT(TPL3) DF3S6.8ECT(TPL3) Toshiba Semiconductor and Storage DF3S6.8ECT.pdf Description: TVS DIODE 5VWM CST3
Produkt ist nicht verfügbar
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DF3S6.8ECT(TPL3) DF3S6.8ECT(TPL3) Toshiba Semiconductor and Storage DF3S6.8ECT.pdf Description: TVS DIODE 5VWM CST3
Produkt ist nicht verfügbar
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DF5A3.3F(TE85L,F) DF5A3.3F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.3F Description: TVS DIODE 1VWM SMV
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
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DF5A3.3F(TE85L,F) DF5A3.3F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.3F Description: TVS DIODE 1VWM SMV
Produkt ist nicht verfügbar
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DF5A3.3F(TE85L,F) DF5A3.3F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.3F Description: TVS DIODE 1VWM SMV
Produkt ist nicht verfügbar
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DF5A3.3FU(TE85L,F) DF5A3.3FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU Description: TVS DIODE 1VWM USV
auf Bestellung 3000 Stücke:
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DF5A3.3FU(TE85L,F) DF5A3.3FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU Description: TVS DIODE 1VWM USV
Produkt ist nicht verfügbar
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DF5A3.3FU(TE85L,F) DF5A3.3FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU Description: TVS DIODE 1VWM USV
auf Bestellung 2955 Stücke:
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DF5A3.6CFU(TE85L,F DF5A3.6CFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU Description: TVS DIODE 1.8VWM USV
auf Bestellung 3000 Stücke:
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DF5A3.6CFU(TE85L,F DF5A3.6CFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU Description: TVS DIODE 1.8VWM USV
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DF5A3.6CFU(TE85L,F DF5A3.6CFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU Description: TVS DIODE 1.8VWM USV
auf Bestellung 1907 Stücke:
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DF5A3.6CJE(TE85L,F DF5A3.6CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
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DF5A3.6CJE(TE85L,F DF5A3.6CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE Description: TVS DIODE 1.8VWM ESV
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DF5A3.6CJE(TE85L,F DF5A3.6CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
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DF5A3.6F(TE85L,F) DF5A3.6F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F Description: TVS DIODE 1VWM SMV
auf Bestellung 3000 Stücke:
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DF5A3.6F(TE85L,F) DF5A3.6F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
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DF5A3.6F(TE85L,F) DF5A3.6F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
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DF5A3.6FU(TE85L,F) DF5A3.6FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22250&prodName=DF5A3.6FU Description: TVS DIODE 1VWM USV
Produkt ist nicht verfügbar
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DF5A3.6FU(TE85L,F) DF5A3.6FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22250&prodName=DF5A3.6FU Description: TVS DIODE 1VWM USV
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
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DF5A3.6JE(TE85L,F) DF5A3.6JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
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DF5A3.6JE(TE85L,F) DF5A3.6JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
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DF5A3.6JE(TE85L,F) DF5A3.6JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
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DF5A5.6LFU(TE85L,F DF5A5.6LFU(TE85L,F Toshiba Semiconductor and Storage DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU Description: TVS DIODE 3.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.097 EUR
Mindestbestellmenge: 3000
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DF5A5.6LFU(TE85L,F DF5A5.6LFU(TE85L,F Toshiba Semiconductor and Storage DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 8766 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
58+0.31 EUR
121+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CFU(TE85L,F DF5A6.2CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CFU(TE85L,F DF5A6.2CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 14042 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
58+0.3 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CJE(TE85L,F DF5A6.2CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
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DF5A6.2CJE(TE85L,F DF5A6.2CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
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DF5A6.2CJE(TE85L,F DF5A6.2CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
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DF5A6.2F(TE85L,F) DF5A6.2F(TE85L,F) Toshiba Semiconductor and Storage DF5A6.2F_datasheet_en_20140301.pdf?did=22248&prodName=DF5A6.2F Description: TVS DIODE 3VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2F(TE85L,F) DF5A6.2F(TE85L,F) Toshiba Semiconductor and Storage DF5A6.2F_datasheet_en_20140301.pdf?did=22248&prodName=DF5A6.2F Description: TVS DIODE 3VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2FU(TE85L,F) DF5A6.2FU(TE85L,F) Toshiba Semiconductor and Storage DF5A6.2FU_datasheet_en_20140301.pdf?did=22253&prodName=DF5A6.2FU Description: TVS DIODE 3VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.094 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2FU(TE85L,F) DF5A6.2FU(TE85L,F) Toshiba Semiconductor and Storage DF5A6.2FU_datasheet_en_20140301.pdf?did=22253&prodName=DF5A6.2FU Description: TVS DIODE 3VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 7835 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
63+0.28 EUR
120+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2JE(TE85L,F) DF5A6.2JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2JE(TE85L,F) DF5A6.2JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2JE(TE85L,F) DF5A6.2JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2LJE,LM DF5A6.2LJE,LM Toshiba Semiconductor and Storage DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.074 EUR
8000+0.059 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2LJE,LM DF5A6.2LJE,LM Toshiba Semiconductor and Storage DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 17243 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
90+0.2 EUR
177+0.1 EUR
500+0.091 EUR
1000+0.082 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8CFU(TE85L,F DF5A6.8CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8CFU(TE85L,F DF5A6.8CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
61+0.29 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8F,LF DF5A6.8F,LF Toshiba Semiconductor and Storage DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F Description: TVS DIODE 5VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.069 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8F,LF DF5A6.8F,LF Toshiba Semiconductor and Storage DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F Description: TVS DIODE 5VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 5493 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
90+0.2 EUR
174+0.1 EUR
500+0.097 EUR
1000+0.092 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K339R,LF SSM3K339R,LF Toshiba Semiconductor and Storage docget.jsp?did=14950&prodName=SSM3K339R Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.093 EUR
21000+0.089 EUR
Mindestbestellmenge: 3000
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SSM3K339R,LF SSM3K339R,LF Toshiba Semiconductor and Storage docget.jsp?did=14950&prodName=SSM3K339R Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 22674 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
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SSM6K217FE,LF SSM6K217FE,LF Toshiba Semiconductor and Storage docget.jsp?did=15010&prodName=SSM6K217FE Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 20000 Stücke:
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4000+0.13 EUR
8000+0.12 EUR
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SSM6K217FE,LF SSM6K217FE,LF Toshiba Semiconductor and Storage docget.jsp?did=15010&prodName=SSM6K217FE Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 21923 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
95+0.19 EUR
103+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 72
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TRS12N65D,S1F TRS12N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOT 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS16N65D,S1F TRS16N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOT 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS20N65D,S1F TRS20N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
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TRS24N65D,S1F TRS24N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARR SCHOTT 650V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TK100S04N1L,LQ TK100S04N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2828 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.53 EUR
10+3.6 EUR
100+2.51 EUR
500+2.05 EUR
1000+1.9 EUR
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TK100S04N1L,LQ TK100S04N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Produkt ist nicht verfügbar
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TK10A60E,S5X TK10A60E,S5X Toshiba Semiconductor and Storage TK10A60E.pdf Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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TK10A80E,S4X TK10A80E,S4X Toshiba Semiconductor and Storage TK10A80E_datasheet_en_20140304.pdf?did=14235&prodName=TK10A80E Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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TK10J80E,S1E TK10J80E,S1E Toshiba Semiconductor and Storage TK10J80E_datasheet_en_20140228.pdf?did=14047&prodName=TK10J80E Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
Mindestbestellmenge: 4
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TK12A50E,S5X TK12A50E,S5X Toshiba Semiconductor and Storage TK12A50E.pdf Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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DF3A6.8UFU,LF docget.jsp?type=datasheet&lang=en&pid=DF3A6.8UFU
DF3A6.8UFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
auf Bestellung 12 Stücke:
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DF3A6.8UFU,LF docget.jsp?type=datasheet&lang=en&pid=DF3A6.8UFU
DF3A6.8UFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
auf Bestellung 1492 Stücke:
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DF3A6.8UFU,LF docget.jsp?type=datasheet&lang=en&pid=DF3A6.8UFU
DF3A6.8UFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
auf Bestellung 1492 Stücke:
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DF3S6.8ECT(TPL3) DF3S6.8ECT.pdf
DF3S6.8ECT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST3
Produkt ist nicht verfügbar
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DF3S6.8ECT(TPL3) DF3S6.8ECT.pdf
DF3S6.8ECT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST3
Produkt ist nicht verfügbar
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DF3S6.8ECT(TPL3) DF3S6.8ECT.pdf
DF3S6.8ECT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST3
Produkt ist nicht verfügbar
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DF5A3.3F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.3F
DF5A3.3F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
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DF5A3.3F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.3F
DF5A3.3F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
Produkt ist nicht verfügbar
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DF5A3.3F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.3F
DF5A3.3F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
Produkt ist nicht verfügbar
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DF5A3.3FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU
DF5A3.3FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
auf Bestellung 3000 Stücke:
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DF5A3.3FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU
DF5A3.3FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
Produkt ist nicht verfügbar
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DF5A3.3FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU
DF5A3.3FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
auf Bestellung 2955 Stücke:
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DF5A3.6CFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU
DF5A3.6CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM USV
auf Bestellung 3000 Stücke:
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DF5A3.6CFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU
DF5A3.6CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM USV
Produkt ist nicht verfügbar
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DF5A3.6CFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU
DF5A3.6CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM USV
auf Bestellung 1907 Stücke:
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DF5A3.6CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE
DF5A3.6CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
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DF5A3.6CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE
DF5A3.6CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
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DF5A3.6CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE
DF5A3.6CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM ESV
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DF5A3.6F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F
DF5A3.6F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
auf Bestellung 3000 Stücke:
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DF5A3.6F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F
DF5A3.6F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
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DF5A3.6F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F
DF5A3.6F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
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DF5A3.6FU(TE85L,F) docget.jsp?did=22250&prodName=DF5A3.6FU
DF5A3.6FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
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DF5A3.6FU(TE85L,F) docget.jsp?did=22250&prodName=DF5A3.6FU
DF5A3.6FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
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DF5A3.6JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE
DF5A3.6JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
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DF5A3.6JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE
DF5A3.6JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
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DF5A3.6JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE
DF5A3.6JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
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DF5A5.6LFU(TE85L,F DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU
DF5A5.6LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.097 EUR
Mindestbestellmenge: 3000
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DF5A5.6LFU(TE85L,F DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU
DF5A5.6LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 8766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
58+0.31 EUR
121+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
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DF5A6.2CFU(TE85L,F DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU
DF5A6.2CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CFU(TE85L,F DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU
DF5A6.2CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 14042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
58+0.3 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
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DF5A6.2CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE
DF5A6.2CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE
DF5A6.2CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE
DF5A6.2CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2F(TE85L,F) DF5A6.2F_datasheet_en_20140301.pdf?did=22248&prodName=DF5A6.2F
DF5A6.2F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2F(TE85L,F) DF5A6.2F_datasheet_en_20140301.pdf?did=22248&prodName=DF5A6.2F
DF5A6.2F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2FU(TE85L,F) DF5A6.2FU_datasheet_en_20140301.pdf?did=22253&prodName=DF5A6.2FU
DF5A6.2FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.094 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2FU(TE85L,F) DF5A6.2FU_datasheet_en_20140301.pdf?did=22253&prodName=DF5A6.2FU
DF5A6.2FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 7835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
63+0.28 EUR
120+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
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DF5A6.2JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE
DF5A6.2JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE
DF5A6.2JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE
DF5A6.2JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2LJE,LM DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE
DF5A6.2LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.074 EUR
8000+0.059 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2LJE,LM DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE
DF5A6.2LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 17243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
90+0.2 EUR
177+0.1 EUR
500+0.091 EUR
1000+0.082 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8CFU(TE85L,F DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU
DF5A6.8CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8CFU(TE85L,F DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU
DF5A6.8CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
61+0.29 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8F,LF DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F
DF5A6.8F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.069 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8F,LF DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F
DF5A6.8F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 5493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
90+0.2 EUR
174+0.1 EUR
500+0.097 EUR
1000+0.092 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K339R,LF docget.jsp?did=14950&prodName=SSM3K339R
SSM3K339R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.093 EUR
21000+0.089 EUR
Mindestbestellmenge: 3000
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SSM3K339R,LF docget.jsp?did=14950&prodName=SSM3K339R
SSM3K339R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 22674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
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SSM6K217FE,LF docget.jsp?did=15010&prodName=SSM6K217FE
SSM6K217FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
8000+0.12 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K217FE,LF docget.jsp?did=15010&prodName=SSM6K217FE
SSM6K217FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 21923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
95+0.19 EUR
103+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 72
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TRS12N65D,S1F
TRS12N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOT 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS16N65D,S1F
TRS16N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOT 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS20N65D,S1F
TRS20N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
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TRS24N65D,S1F
TRS24N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 650V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TK100S04N1L,LQ docget.jsp?did=14004&prodName=TK100S04N1L
TK100S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.53 EUR
10+3.6 EUR
100+2.51 EUR
500+2.05 EUR
1000+1.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK100S04N1L,LQ docget.jsp?did=14004&prodName=TK100S04N1L
TK100S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Produkt ist nicht verfügbar
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TK10A60E,S5X TK10A60E.pdf
TK10A60E,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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TK10A80E,S4X TK10A80E_datasheet_en_20140304.pdf?did=14235&prodName=TK10A80E
TK10A80E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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TK10J80E,S1E TK10J80E_datasheet_en_20140228.pdf?did=14047&prodName=TK10J80E
TK10J80E,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.77 EUR
Mindestbestellmenge: 4
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TK12A50E,S5X TK12A50E.pdf
TK12A50E,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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