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TCR2EF50,LM(CT TCR2EF50,LM(CT Toshiba Semiconductor and Storage TCR2EF50_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF50 Description: IC REG LINEAR 5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 24557 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
45+ 0.39 EUR
52+ 0.34 EUR
100+ 0.22 EUR
250+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
TCR2LE08,LM(CT TCR2LE08,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE08 Description: 200MA LDO VOUT0.8V DROPOUT220MV
Produkt ist nicht verfügbar
TCR2LE105,LM(CT TCR2LE105,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE105 Description: IC REG LINEAR 1.05V 200MA ESV
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
39+ 0.46 EUR
44+ 0.41 EUR
100+ 0.26 EUR
Mindestbestellmenge: 28
TCR2LE11,LM(CT TCR2LE11,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE11 Description: IC REG LINEAR 1.1V 200MA ESV
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LE13,LM(CT TCR2LE13,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE13 Description: IC REG LINEAR 1.3V 200MA ESV
auf Bestellung 7990 Stücke:
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24+0.76 EUR
32+ 0.56 EUR
36+ 0.49 EUR
100+ 0.32 EUR
250+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
TCR2LE21,LM(CT TCR2LE21,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE21 Description: IC REG LINEAR 2.1V 200MA ESV
auf Bestellung 7935 Stücke:
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25+0.72 EUR
34+ 0.53 EUR
39+ 0.46 EUR
100+ 0.3 EUR
250+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 25
TCR2LF08,LM(CT TCR2LF08,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF08 Description: IC REG LINEAR 0.8V 200MA SMV
auf Bestellung 5893 Stücke:
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TCR2LF085,LM(CT TCR2LF085,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF085 Description: IC REG LINEAR 0.85V 200MA SMV
auf Bestellung 5893 Stücke:
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26+0.69 EUR
35+ 0.51 EUR
40+ 0.45 EUR
100+ 0.29 EUR
250+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
TCR2LF09,LM(CT TCR2LF09,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF09 Description: IC REG LINEAR 0.9V 200MA SMV
auf Bestellung 5850 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LF095,LM(CT TCR2LF095,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF095 Description: IC REG LINEAR 0.95V 200MA SMV
auf Bestellung 5975 Stücke:
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TCR2LF105,LM(CT TCR2LF105,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Voltage Dropout (Max): 1.4V @ 150mA
Protection Features: Over Current
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LF11,LM(CT TCR2LF11,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF11 Description: IC REG LINEAR 1.1V 200MA SMV
Produkt ist nicht verfügbar
TCR2LF115,LM(CT TCR2LF115,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF115 Description: IC REG LINEAR 1.15V 200MA SMV
auf Bestellung 5975 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
36+ 0.5 EUR
41+ 0.44 EUR
100+ 0.28 EUR
250+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
TCR2LF13,LM(CT TCR2LF13,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF13 Description: IC REG LINEAR 1.3V 200MA SMV
auf Bestellung 5664 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
34+ 0.53 EUR
38+ 0.46 EUR
100+ 0.3 EUR
250+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 25
TCR2LF21,LM(CT TCR2LF21,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF21 Description: IC REG LINEAR 2.1V 200MA SMV
Produkt ist nicht verfügbar
TCR2LF28,LM(CT TCR2LF28,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF28 Description: IC REG LINEAR 2.8V 200MA SMV
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
35+ 0.51 EUR
40+ 0.45 EUR
100+ 0.29 EUR
250+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
TCR2LF285,LM(CT TCR2LF285,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF285 Description: 200MA LDO VOUT2.85V DROPOUT220MV
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LF31,LM(CT TCR2LF31,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF31 Description: 200MA LDO VOUT3.1V DROPOUT220MV
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR4DG105,LF TCR4DG105,LF Toshiba Semiconductor and Storage TCR4DG105_datasheet_en_20170512.pdf?did=57958&prodName=TCR4DG105 Description: IC REG LINEAR 1.05V 420MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 420mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.991V @ 420mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR5AM18A,LF TCR5AM18A,LF Toshiba Semiconductor and Storage docget.jsp?did=58512&prodName=TCR5AM18A Description: 500MA LDO VOUT1.8V DROPOUT90MV I
auf Bestellung 9575 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
28+ 0.64 EUR
31+ 0.58 EUR
100+ 0.43 EUR
250+ 0.39 EUR
500+ 0.33 EUR
1000+ 0.24 EUR
2500+ 0.22 EUR
Mindestbestellmenge: 23
TCR8BM10,L3F TCR8BM10,L3F Toshiba Semiconductor and Storage TCR8BM10_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM10 Description: IC REG LINEAR 1V 800MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.23V @ 800mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR8BM105,L3F TCR8BM105,L3F Toshiba Semiconductor and Storage docget.jsp?did=63495&prodName=TCR8BM105 Description: 800MA LDO VOUT1.05V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR8BM11,L3F TCR8BM11,L3F Toshiba Semiconductor and Storage docget.jsp?did=63495&prodName=TCR8BM11 Description: 800MA LDO VOUT1.1V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR8BM12,L3F TCR8BM12,L3F Toshiba Semiconductor and Storage TCR8BM12_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM12 Description: IC REG LINEAR 1.2V 800MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.26V @ 800mA
Protection Features: Over Current, Over Temperature
auf Bestellung 4893 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
28+ 0.64 EUR
30+ 0.6 EUR
100+ 0.48 EUR
250+ 0.45 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
2500+ 0.27 EUR
Mindestbestellmenge: 24
SSM3J135TU,LF SSM3J135TU,LF Toshiba Semiconductor and Storage docget.jsp?did=6621&prodName=SSM3J135TU Description: MOSFET P-CH 20V 3A UFM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SSM3K122TU,LF SSM3K122TU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
auf Bestellung 14990 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
40+ 0.45 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
SSM3K127TU,LF SSM3K127TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11045&prodName=SSM3K127TU Description: MOSFET N-CH 30V 2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 11007 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
39+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 30
SSM3K131TU,LF SSM3K131TU,LF Toshiba Semiconductor and Storage SSM3K131TU_datasheet_en_20140301.pdf?did=12385&prodName=SSM3K131TU Description: MOSFET N-CH 30V 6A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 27.6mOhm @ 4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 22724 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+ 0.67 EUR
100+ 0.47 EUR
500+ 0.36 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 23
SSM3K48FU,LF SSM3K48FU,LF Toshiba Semiconductor and Storage docget.jsp?did=6725&prodName=SSM3K48FU Description: MOSFET N-CH 30V 100MA USM
auf Bestellung 14961 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
32+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 26
SSM5H90ATU,LF SSM5H90ATU,LF Toshiba Semiconductor and Storage docget.jsp?did=13824&prodName=SSM5H90ATU Description: SMALL SIGNAL MOSFET N-CH VDSS60V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
SSM6J422TU,LF SSM6J422TU,LF Toshiba Semiconductor and Storage SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU Description: MOSFET P-CH 20V 4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 5010 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
40+ 0.44 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
SSM6K208FE,LF SSM6K208FE,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 30V 1.9A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
29+ 0.62 EUR
100+ 0.37 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 23
SSM6K407TU,LF SSM6K407TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10949&prodName=SSM6K407TU Description: MOSFET N-CH 60V 2A UF6
auf Bestellung 3870 Stücke:
Lieferzeit 10-14 Tag (e)
SSM6P69NU,LF SSM6P69NU,LF Toshiba Semiconductor and Storage SSM6P69NU_datasheet_en_20180327.pdf?did=61140&prodName=SSM6P69NU Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 12033 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
1SS321,LF 1SS321,LF Toshiba Semiconductor and Storage 1SS321_datasheet_en_20171026.pdf?did=3312&prodName=1SS321 Description: DIODE SCHOTTKY 10V 50MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 40708 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
51+ 0.35 EUR
104+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
1SS322(TE85L,F) 1SS322(TE85L,F) Toshiba Semiconductor and Storage 1SS322_datasheet_en_20150115.pdf?did=3314&prodName=1SS322 Description: DIODE SCHOTTKY 40V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 8994 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
53+ 0.33 EUR
108+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
Mindestbestellmenge: 36
1SS385,LF(CT 1SS385,LF(CT Toshiba Semiconductor and Storage Description: DIODE SCHOTTKY 10V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 4975 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
46+ 0.39 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 32
1SS385FV,L3F 1SS385FV,L3F Toshiba Semiconductor and Storage 1SS385FV_datasheet_en_20140301.pdf?did=4395&prodName=1SS385FV Description: DIODE SCHOTTKY 10V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 7982 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
68+ 0.26 EUR
138+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.064 EUR
Mindestbestellmenge: 46
TCR8BM105,L3F TCR8BM105,L3F Toshiba Semiconductor and Storage docget.jsp?did=63495&prodName=TCR8BM105 Description: 800MA LDO VOUT1.05V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR8BM11,L3F TCR8BM11,L3F Toshiba Semiconductor and Storage docget.jsp?did=63495&prodName=TCR8BM11 Description: 800MA LDO VOUT1.1V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
1SS360,LJ(CT 1SS360,LJ(CT Toshiba Semiconductor and Storage Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.061 EUR
Mindestbestellmenge: 3000
1SS360,LJ(CT 1SS360,LJ(CT Toshiba Semiconductor and Storage Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 6834 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
72+ 0.25 EUR
146+ 0.12 EUR
500+ 0.1 EUR
1000+ 0.07 EUR
Mindestbestellmenge: 48
TB9056FNG(O,EL) TB9056FNG(O,EL) Toshiba Semiconductor and Storage TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TB9056FNG(O,EL) TB9056FNG(O,EL) Toshiba Semiconductor and Storage TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TB67B000AHG TB67B000AHG Toshiba Semiconductor and Storage TB67B000AHG_datasheet_en_20190530.pdf?did=66548&prodName=TB67B000AHG Description: BRUSHLESS MOTOR DRIVER, 600V, 2A
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -30°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.94 EUR
10+ 11.69 EUR
25+ 11.15 EUR
Mindestbestellmenge: 2
TK3R3A06PL,S4X TK3R3A06PL,S4X Toshiba Semiconductor and Storage TK3R3A06PL_datasheet_en_20210126.pdf?did=58713&prodName=TK3R3A06PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
Produkt ist nicht verfügbar
TK49N65W5,S1F TK49N65W5,S1F Toshiba Semiconductor and Storage TK49N65W5_datasheet_en_20140827.pdf?did=14537&prodName=TK49N65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Produkt ist nicht verfügbar
TK3R2A10PL,S4X TK3R2A10PL,S4X Toshiba Semiconductor and Storage TK3R2A10PL_datasheet_en_20210127.pdf?did=60593&prodName=TK3R2A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.52 EUR
50+ 3.64 EUR
Mindestbestellmenge: 4
TK6R7A10PL,S4X TK6R7A10PL,S4X Toshiba Semiconductor and Storage TK6R7A10PL_datasheet_en_20210127.pdf?did=60599&prodName=TK6R7A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
Produkt ist nicht verfügbar
TPN5R203PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55524&prodName=TPN5R203PL Description: MOSFET N-CH 30V 38A 8TSON
Produkt ist nicht verfügbar
TK28N65W5,S1F TK28N65W5,S1F Toshiba Semiconductor and Storage TK28N65W5_datasheet_en_20140225.pdf?did=14529&prodName=TK28N65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.26 EUR
30+ 8.13 EUR
Mindestbestellmenge: 2
TPH1R405PL,L1Q TPH1R405PL,L1Q Toshiba Semiconductor and Storage TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL Description: MOSFET N-CH 45V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Produkt ist nicht verfügbar
TK7R4A10PL,S4X TK7R4A10PL,S4X Toshiba Semiconductor and Storage TK7R4A10PL_datasheet_en_20210127.pdf?did=60497&prodName=TK7R4A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Produkt ist nicht verfügbar
TK4R1A10PL,S4X TK4R1A10PL,S4X Toshiba Semiconductor and Storage TK4R1A10PL_datasheet_en_20210127.pdf?did=60610&prodName=TK4R1A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
Produkt ist nicht verfügbar
TPH2R003PL,LQ TPH2R003PL,LQ Toshiba Semiconductor and Storage TPH2R003PL_datasheet_en_20160906.pdf?did=54498&prodName=TPH2R003PL Description: MOSFET N-CH 30V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.54 EUR
Mindestbestellmenge: 3000
TK110E10PL,S1X TK110E10PL,S1X Toshiba Semiconductor and Storage TK110E10PL_datasheet_en_20210126.pdf?did=60605&prodName=TK110E10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
50+ 1.66 EUR
100+ 1.32 EUR
Mindestbestellmenge: 9
TK3R2E06PL,S1X TK3R2E06PL,S1X Toshiba Semiconductor and Storage TK3R2E06PL_datasheet_en_20210120.pdf?did=58637&prodName=TK3R2E06PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
Mindestbestellmenge: 7
TK49N65W,S1F TK49N65W,S1F Toshiba Semiconductor and Storage TK49N65W_datasheet_en_20140225.pdf?did=14538&prodName=TK49N65W Description: PB-F POWER MOSFET TRANSISTOR TO2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.37 EUR
30+ 14.06 EUR
Mindestbestellmenge: 2
TK3R9E10PL,S1X TK3R9E10PL,S1X Toshiba Semiconductor and Storage TK3R9E10PL_datasheet_en_20210121.pdf?did=60597&prodName=TK3R9E10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
Produkt ist nicht verfügbar
TK5R3A06PL,S4X TK5R3A06PL,S4X Toshiba Semiconductor and Storage TK5R3A06PL_datasheet_en_20210127.pdf?did=58508&prodName=TK5R3A06PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
Mindestbestellmenge: 9
TCR2EF50,LM(CT TCR2EF50_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF50
TCR2EF50,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 24557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
45+ 0.39 EUR
52+ 0.34 EUR
100+ 0.22 EUR
250+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
TCR2LE08,LM(CT docget.jsp?did=28807&prodName=TCR2LE08
TCR2LE08,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 200MA LDO VOUT0.8V DROPOUT220MV
Produkt ist nicht verfügbar
TCR2LE105,LM(CT docget.jsp?did=28807&prodName=TCR2LE105
TCR2LE105,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 200MA ESV
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
39+ 0.46 EUR
44+ 0.41 EUR
100+ 0.26 EUR
Mindestbestellmenge: 28
TCR2LE11,LM(CT docget.jsp?did=28807&prodName=TCR2LE11
TCR2LE11,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 200MA ESV
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LE13,LM(CT docget.jsp?did=28807&prodName=TCR2LE13
TCR2LE13,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 200MA ESV
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
32+ 0.56 EUR
36+ 0.49 EUR
100+ 0.32 EUR
250+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
TCR2LE21,LM(CT docget.jsp?did=28807&prodName=TCR2LE21
TCR2LE21,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA ESV
auf Bestellung 7935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
34+ 0.53 EUR
39+ 0.46 EUR
100+ 0.3 EUR
250+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 25
TCR2LF08,LM(CT docget.jsp?did=28807&prodName=TCR2LF08
TCR2LF08,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.8V 200MA SMV
auf Bestellung 5893 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LF085,LM(CT docget.jsp?did=28807&prodName=TCR2LF085
TCR2LF085,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.85V 200MA SMV
auf Bestellung 5893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
35+ 0.51 EUR
40+ 0.45 EUR
100+ 0.29 EUR
250+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
TCR2LF09,LM(CT docget.jsp?did=28807&prodName=TCR2LF09
TCR2LF09,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 200MA SMV
auf Bestellung 5850 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LF095,LM(CT docget.jsp?did=28807&prodName=TCR2LF095
TCR2LF095,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.95V 200MA SMV
auf Bestellung 5975 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LF105,LM(CT
TCR2LF105,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Voltage Dropout (Max): 1.4V @ 150mA
Protection Features: Over Current
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LF11,LM(CT docget.jsp?did=28807&prodName=TCR2LF11
TCR2LF11,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 200MA SMV
Produkt ist nicht verfügbar
TCR2LF115,LM(CT docget.jsp?did=28807&prodName=TCR2LF115
TCR2LF115,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.15V 200MA SMV
auf Bestellung 5975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
36+ 0.5 EUR
41+ 0.44 EUR
100+ 0.28 EUR
250+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
TCR2LF13,LM(CT docget.jsp?did=28807&prodName=TCR2LF13
TCR2LF13,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 200MA SMV
auf Bestellung 5664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
34+ 0.53 EUR
38+ 0.46 EUR
100+ 0.3 EUR
250+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 25
TCR2LF21,LM(CT docget.jsp?did=28807&prodName=TCR2LF21
TCR2LF21,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA SMV
Produkt ist nicht verfügbar
TCR2LF28,LM(CT docget.jsp?did=28807&prodName=TCR2LF28
TCR2LF28,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 200MA SMV
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
35+ 0.51 EUR
40+ 0.45 EUR
100+ 0.29 EUR
250+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
TCR2LF285,LM(CT docget.jsp?did=28807&prodName=TCR2LF285
TCR2LF285,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 200MA LDO VOUT2.85V DROPOUT220MV
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
TCR2LF31,LM(CT docget.jsp?did=28807&prodName=TCR2LF31
TCR2LF31,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 200MA LDO VOUT3.1V DROPOUT220MV
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR4DG105,LF TCR4DG105_datasheet_en_20170512.pdf?did=57958&prodName=TCR4DG105
TCR4DG105,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 420MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 420mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.991V @ 420mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR5AM18A,LF docget.jsp?did=58512&prodName=TCR5AM18A
TCR5AM18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: 500MA LDO VOUT1.8V DROPOUT90MV I
auf Bestellung 9575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
28+ 0.64 EUR
31+ 0.58 EUR
100+ 0.43 EUR
250+ 0.39 EUR
500+ 0.33 EUR
1000+ 0.24 EUR
2500+ 0.22 EUR
Mindestbestellmenge: 23
TCR8BM10,L3F TCR8BM10_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM10
TCR8BM10,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 800MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.23V @ 800mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR8BM105,L3F docget.jsp?did=63495&prodName=TCR8BM105
TCR8BM105,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO VOUT1.05V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR8BM11,L3F docget.jsp?did=63495&prodName=TCR8BM11
TCR8BM11,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO VOUT1.1V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR8BM12,L3F TCR8BM12_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM12
TCR8BM12,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.2V 800MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.26V @ 800mA
Protection Features: Over Current, Over Temperature
auf Bestellung 4893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
28+ 0.64 EUR
30+ 0.6 EUR
100+ 0.48 EUR
250+ 0.45 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
2500+ 0.27 EUR
Mindestbestellmenge: 24
SSM3J135TU,LF docget.jsp?did=6621&prodName=SSM3J135TU
SSM3J135TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3A UFM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SSM3K122TU,LF
SSM3K122TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
auf Bestellung 14990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
40+ 0.45 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
SSM3K127TU,LF docget.jsp?did=11045&prodName=SSM3K127TU
SSM3K127TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 11007 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
39+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 30
SSM3K131TU,LF SSM3K131TU_datasheet_en_20140301.pdf?did=12385&prodName=SSM3K131TU
SSM3K131TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 27.6mOhm @ 4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 22724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
27+ 0.67 EUR
100+ 0.47 EUR
500+ 0.36 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 23
SSM3K48FU,LF docget.jsp?did=6725&prodName=SSM3K48FU
SSM3K48FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA USM
auf Bestellung 14961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
32+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 26
SSM5H90ATU,LF docget.jsp?did=13824&prodName=SSM5H90ATU
SSM5H90ATU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS60V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
SSM6J422TU,LF SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU
SSM6J422TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 5010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
40+ 0.44 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
SSM6K208FE,LF
SSM6K208FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
29+ 0.62 EUR
100+ 0.37 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 23
SSM6K407TU,LF docget.jsp?did=10949&prodName=SSM6K407TU
SSM6K407TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2A UF6
auf Bestellung 3870 Stücke:
Lieferzeit 10-14 Tag (e)
SSM6P69NU,LF SSM6P69NU_datasheet_en_20180327.pdf?did=61140&prodName=SSM6P69NU
SSM6P69NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 12033 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
1SS321,LF 1SS321_datasheet_en_20171026.pdf?did=3312&prodName=1SS321
1SS321,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 50MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 40708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
51+ 0.35 EUR
104+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
1SS322(TE85L,F) 1SS322_datasheet_en_20150115.pdf?did=3314&prodName=1SS322
1SS322(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 8994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
53+ 0.33 EUR
108+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
Mindestbestellmenge: 36
1SS385,LF(CT
1SS385,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 4975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
46+ 0.39 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 32
1SS385FV,L3F 1SS385FV_datasheet_en_20140301.pdf?did=4395&prodName=1SS385FV
1SS385FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 7982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
68+ 0.26 EUR
138+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.064 EUR
Mindestbestellmenge: 46
TCR8BM105,L3F docget.jsp?did=63495&prodName=TCR8BM105
TCR8BM105,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO VOUT1.05V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR8BM11,L3F docget.jsp?did=63495&prodName=TCR8BM11
TCR8BM11,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO VOUT1.1V DROPOUT170MV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
1SS360,LJ(CT
1SS360,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.061 EUR
Mindestbestellmenge: 3000
1SS360,LJ(CT
1SS360,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 6834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
72+ 0.25 EUR
146+ 0.12 EUR
500+ 0.1 EUR
1000+ 0.07 EUR
Mindestbestellmenge: 48
TB9056FNG(O,EL) TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG
TB9056FNG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TB9056FNG(O,EL) TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG
TB9056FNG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TB67B000AHG TB67B000AHG_datasheet_en_20190530.pdf?did=66548&prodName=TB67B000AHG
TB67B000AHG
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHLESS MOTOR DRIVER, 600V, 2A
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -30°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.94 EUR
10+ 11.69 EUR
25+ 11.15 EUR
Mindestbestellmenge: 2
TK3R3A06PL,S4X TK3R3A06PL_datasheet_en_20210126.pdf?did=58713&prodName=TK3R3A06PL
TK3R3A06PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
Produkt ist nicht verfügbar
TK49N65W5,S1F TK49N65W5_datasheet_en_20140827.pdf?did=14537&prodName=TK49N65W5
TK49N65W5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Produkt ist nicht verfügbar
TK3R2A10PL,S4X TK3R2A10PL_datasheet_en_20210127.pdf?did=60593&prodName=TK3R2A10PL
TK3R2A10PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.52 EUR
50+ 3.64 EUR
Mindestbestellmenge: 4
TK6R7A10PL,S4X TK6R7A10PL_datasheet_en_20210127.pdf?did=60599&prodName=TK6R7A10PL
TK6R7A10PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
Produkt ist nicht verfügbar
TPN5R203PL,LQ docget.jsp?did=55524&prodName=TPN5R203PL
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8TSON
Produkt ist nicht verfügbar
TK28N65W5,S1F TK28N65W5_datasheet_en_20140225.pdf?did=14529&prodName=TK28N65W5
TK28N65W5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.26 EUR
30+ 8.13 EUR
Mindestbestellmenge: 2
TPH1R405PL,L1Q TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL
TPH1R405PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Produkt ist nicht verfügbar
TK7R4A10PL,S4X TK7R4A10PL_datasheet_en_20210127.pdf?did=60497&prodName=TK7R4A10PL
TK7R4A10PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Produkt ist nicht verfügbar
TK4R1A10PL,S4X TK4R1A10PL_datasheet_en_20210127.pdf?did=60610&prodName=TK4R1A10PL
TK4R1A10PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
Produkt ist nicht verfügbar
TPH2R003PL,LQ TPH2R003PL_datasheet_en_20160906.pdf?did=54498&prodName=TPH2R003PL
TPH2R003PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.54 EUR
Mindestbestellmenge: 3000
TK110E10PL,S1X TK110E10PL_datasheet_en_20210126.pdf?did=60605&prodName=TK110E10PL
TK110E10PL,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
50+ 1.66 EUR
100+ 1.32 EUR
Mindestbestellmenge: 9
TK3R2E06PL,S1X TK3R2E06PL_datasheet_en_20210120.pdf?did=58637&prodName=TK3R2E06PL
TK3R2E06PL,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.71 EUR
Mindestbestellmenge: 7
TK49N65W,S1F TK49N65W_datasheet_en_20140225.pdf?did=14538&prodName=TK49N65W
TK49N65W,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+17.37 EUR
30+ 14.06 EUR
Mindestbestellmenge: 2
TK3R9E10PL,S1X TK3R9E10PL_datasheet_en_20210121.pdf?did=60597&prodName=TK3R9E10PL
TK3R9E10PL,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
Produkt ist nicht verfügbar
TK5R3A06PL,S4X TK5R3A06PL_datasheet_en_20210127.pdf?did=58508&prodName=TK5R3A06PL
TK5R3A06PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
Mindestbestellmenge: 9
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