Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13523) > Seite 137 nach 226
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TLP5702(D4-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLP5702(D4,E | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER DRIVER SO6Current - Output / Channel: 50 mA Number of Channels: 1 Part Status: Active Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 20mA Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 15V ~ 30V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TLP570(FANUC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP570(MBS,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160G(SIEMTPLS,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TK4R4P06PL,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 60V 58A DPAKInput Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 500µA Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TK4R4P06PL,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 60V 58A DPAKInput Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 500µA Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 3436 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7W00FK,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 2CH 4-INP US8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TC7W00FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 2CH 2-INP 8SSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TC7W32FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC GATE OR 2CH 2-INP 8SSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SSM6N62TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A UF6Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N62TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A UF6Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.2V Drive Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 500mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 12922 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3403R(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-20VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.108", 2.75mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.8VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-VSONR (1.45x2.75) Part Status: Active Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 220 mOhms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TAR5S35U(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.5V 200MA UFVPackaging: Tape & Reel (TR) Current - Supply (Max): 850 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.2V @ 50mA PSRR: 70dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.5V Supplier Device Package: UFV Number of Regulators: 1 Voltage - Input (Max): 15V Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-SMD (5 Leads), Flat Lead |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TAR5S35U(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.5V 200MA UFVCurrent - Supply (Max): 850 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.2V @ 50mA PSRR: 70dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.5V Supplier Device Package: UFV Number of Regulators: 1 Voltage - Input (Max): 15V Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-SMD (5 Leads), Flat Lead Packaging: Cut Tape (CT) |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3341(TP15,F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 140MA 0-40VRelay Type: Photo-Coupled Relay (Photorelay) Approval Agency: UL Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 10 Ohms Voltage - Load: 0 V ~ 40 V Part Status: Active Supplier Device Package: 4-USOP Load Current: 140 mA Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) Voltage - Input: 1.15VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 4-SMD (0.128", 3.25mm) Packaging: Tape & Reel (TR) |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3341(TP15,F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 140MA 0-40VRelay Type: Photo-Coupled Relay (Photorelay) Approval Agency: UL Operating Temperature: -40°C ~ 85°C Voltage - Input: 1.15VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 4-SMD (0.128", 3.25mm) Packaging: Cut Tape (CT) On-State Resistance (Max): 10 Ohms Voltage - Load: 0 V ~ 40 V Part Status: Active Supplier Device Package: 4-USOP Load Current: 140 mA Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) |
auf Bestellung 5053 Stücke: Lieferzeit 10-14 Tag (e) |
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DF6A6.8FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE US6Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 4 Supplier Device Package: US6 Capacitance @ Frequency: 45pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DF6A6.8FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE US6Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 4 Supplier Device Package: US6 Capacitance @ Frequency: 45pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TTC011B,Q(S | Toshiba Semiconductor and Storage |
Description: TRANSISTOR NPN BIPO TO126NPart Status: Active Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLP3122A(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1.4A 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 1.4 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SO, 4 Lead Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 250 MOhms |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3122A(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1.4A 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 1.4 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SO, 4 Lead Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 250 MOhms |
auf Bestellung 51586 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3122A(E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1.4A 0-60VPackaging: Tube Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 1.4 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SO, 4 Lead Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 250 MOhms |
auf Bestellung 1116 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLP371(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP371(LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP371(TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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RN4987FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK380P60Y,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 600V 9.7A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 360µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK380P60Y,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 600V 9.7A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 360µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK33S10N1Z,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 33A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V |
auf Bestellung 4977 Stücke: Lieferzeit 10-14 Tag (e) |
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TK33S10N1Z,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 33A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK33S10N1Z,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 33A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V |
auf Bestellung 3964 Stücke: Lieferzeit 10-14 Tag (e) |
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TK3R1P04PL,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 40V 58A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TK3R1P04PL,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 40V 58A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V |
auf Bestellung 4257 Stücke: Lieferzeit 10-14 Tag (e) |
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TK380P65Y,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 650V 9.7A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 360µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK380P65Y,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 650V 9.7A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 360µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V |
auf Bestellung 2031 Stücke: Lieferzeit 10-14 Tag (e) |
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TK65S04N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 65A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK65S04N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 65A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V |
auf Bestellung 4199 Stücke: Lieferzeit 10-14 Tag (e) |
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TK650A60F,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11A TO220SIS |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLP293(E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOPPackaging: Tube Package / Case: 6-SMD (4 Leads), Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-MFSOP, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 3558 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K56CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA CST3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SSM3K56CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
auf Bestellung 2472 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3350(TP15,F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 200MA 0-20VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.128", 3.25mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 200 mA Supplier Device Package: 4-USOP Part Status: Active Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 5 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3350(TP15,F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 200MA 0-20VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.128", 3.25mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 200 mA Supplier Device Package: 4-USOP Part Status: Active Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 5 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 16420 Stücke: Lieferzeit 10-14 Tag (e) |
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TC78H600FNG,C,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 2.7V-5.5V 20SSOPPackaging: Cut Tape (CT) Package / Case: 20-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: PWM Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 2.5V ~ 15V Supplier Device Package: 20-SSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
auf Bestellung 3936 Stücke: Lieferzeit 10-14 Tag (e) |
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TC78S600FNG,C,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRV BIPLR 2.7-5.5V 20SSOPPackaging: Cut Tape (CT) Package / Case: 20-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 2.5V ~ 15V Supplier Device Package: 20-SSOP Motor Type - Stepper: Bipolar Step Resolution: 1/2, 1/4, 1/8, 1/16 |
auf Bestellung 1999 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3825(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1.5A 0-200VPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 1.5 A Approval Agency: CSA, cUL, UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 8-SMD Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 500 mOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3825(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1.5A 0-200VPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 1.5 A Approval Agency: CSA, cUL, UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 8-SMD Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 500 mOhms |
auf Bestellung 3046 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67S142NG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 24SDIPPackaging: Tray Package / Case: 24-SDIP (0.300", 7.62mm) Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 40V Supplier Device Package: 24-SDIP Motor Type - Stepper: Unipolar Step Resolution: 1, 1/2, 1/4 |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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| KIA78L05BP | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR LDO 5V DIP Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLP551(F) | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER TRANS Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 10% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 15V Turn On / Turn Off Time (Typ): 300ns, 1µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLP551(Y,F) | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER TRANS Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Obsolete Turn On / Turn Off Time (Typ): 300ns, 1µs Voltage - Output (Max): 15V Supplier Device Package: 8-DIP Current Transfer Ratio (Min): 10% @ 16mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.65V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor with Base Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLP551(Y-LF1,F) | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER TRANS Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 10% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 15V Turn On / Turn Off Time (Typ): 300ns, 1µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TLP550(MAT-TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP552(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(MBS,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(Y-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP552(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP552(TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP552(MAT,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TLP5702(D4-TP,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP5702(D4,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER DRIVER SO6
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: OPTOCOUPLER DRIVER SO6
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP160G(SIEMTPLS,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TK4R4P06PL,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 58A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CHANNEL 60V 58A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.21 EUR |
| TK4R4P06PL,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 58A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 60V 58A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 15+ | 1.49 EUR |
| 100+ | 1.46 EUR |
| TC7W00FK,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 4-INP US8
Description: IC GATE NAND 2CH 4-INP US8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TC7W00FUTE12LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC7W32FUTE12LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSM6N62TU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.26 EUR |
| 9000+ | 0.25 EUR |
| SSM6N62TU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.8A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 12922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.26 EUR |
| 28+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.33 EUR |
| TLP3403R(TP,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TAR5S35U(TE85L,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.5V 200MA UFV
Packaging: Tape & Reel (TR)
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Description: IC REG LINEAR 3.5V 200MA UFV
Packaging: Tape & Reel (TR)
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TAR5S35U(TE85L,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.5V 200MA UFV
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 3.5V 200MA UFV
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 25+ | 0.84 EUR |
| 27+ | 0.8 EUR |
| TLP3341(TP15,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 140MA 0-40V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 10 Ohms
Voltage - Load: 0 V ~ 40 V
Part Status: Active
Supplier Device Package: 4-USOP
Load Current: 140 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.15VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.128", 3.25mm)
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 140MA 0-40V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 10 Ohms
Voltage - Load: 0 V ~ 40 V
Part Status: Active
Supplier Device Package: 4-USOP
Load Current: 140 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.15VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.128", 3.25mm)
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 3.94 EUR |
| 3000+ | 3.81 EUR |
| 4500+ | 3.74 EUR |
| TLP3341(TP15,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 140MA 0-40V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1.15VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.128", 3.25mm)
Packaging: Cut Tape (CT)
On-State Resistance (Max): 10 Ohms
Voltage - Load: 0 V ~ 40 V
Part Status: Active
Supplier Device Package: 4-USOP
Load Current: 140 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Description: SSR RELAY SPST-NO 140MA 0-40V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1.15VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.128", 3.25mm)
Packaging: Cut Tape (CT)
On-State Resistance (Max): 10 Ohms
Voltage - Load: 0 V ~ 40 V
Part Status: Active
Supplier Device Package: 4-USOP
Load Current: 140 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
auf Bestellung 5053 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.15 EUR |
| 10+ | 6.02 EUR |
| 100+ | 4.76 EUR |
| 500+ | 4.21 EUR |
| DF6A6.8FU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE US6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: US6
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: TVS DIODE US6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: US6
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DF6A6.8FU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE US6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: US6
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TVS DIODE US6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: US6
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TTC011B,Q(S |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN BIPO TO126N
Part Status: Active
Packaging: Tube
Description: TRANSISTOR NPN BIPO TO126N
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP3122A(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SO, 4 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SO, 4 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.65 EUR |
| 6000+ | 2.56 EUR |
| TLP3122A(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SO, 4 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SO, 4 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
auf Bestellung 51586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.96 EUR |
| 10+ | 3.53 EUR |
| 25+ | 3.37 EUR |
| 50+ | 3.26 EUR |
| 100+ | 3.14 EUR |
| 250+ | 3 EUR |
| 500+ | 2.9 EUR |
| 1000+ | 2.8 EUR |
| TLP3122A(E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SO, 4 Lead
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SO, 4 Lead
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
auf Bestellung 1116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.52 EUR |
| 10+ | 3.15 EUR |
| 25+ | 3.01 EUR |
| 50+ | 2.9 EUR |
| 125+ | 2.77 EUR |
| 250+ | 2.68 EUR |
| 500+ | 2.58 EUR |
| 1000+ | 2.5 EUR |
| RN4987FE,LF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.076 EUR |
| 8000+ | 0.069 EUR |
| 12000+ | 0.064 EUR |
| 20000+ | 0.061 EUR |
| TK380P60Y,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.27 EUR |
| TK380P60Y,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.32 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.38 EUR |
| TK33S10N1Z,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 4977 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.38 EUR |
| 10+ | 2.82 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.4 EUR |
| TK33S10N1Z,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.09 EUR |
| TK33S10N1Z,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.81 EUR |
| 10+ | 2.43 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.19 EUR |
| TK3R1P04PL,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.98 EUR |
| TK3R1P04PL,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 4257 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.81 EUR |
| 11+ | 2.03 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.17 EUR |
| TK380P65Y,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 650V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Description: MOSFET N-CHANNEL 650V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.43 EUR |
| TK380P65Y,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 650V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Description: MOSFET N-CHANNEL 650V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.76 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.54 EUR |
| TK65S04N1L,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.96 EUR |
| 4000+ | 0.89 EUR |
| TK65S04N1L,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 4199 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.05 EUR |
| TK650A60F,S4X |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11A TO220SIS
Description: MOSFET N-CH 600V 11A TO220SIS
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| TLP293(E |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Tube
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Tube
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3558 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 29+ | 0.73 EUR |
| 175+ | 0.49 EUR |
| 525+ | 0.43 EUR |
| 1050+ | 0.4 EUR |
| 2100+ | 0.38 EUR |
| SSM3K56CT,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SSM3K56CT,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 2472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 48+ | 0.44 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.17 EUR |
| TLP3350(TP15,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 200MA 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 200 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 200MA 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 200 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 3.43 EUR |
| 3000+ | 3.3 EUR |
| 4500+ | 3.24 EUR |
| TLP3350(TP15,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 200MA 0-20V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 200 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 200MA 0-20V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 200 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 16420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.19 EUR |
| 10+ | 5.28 EUR |
| 100+ | 4.16 EUR |
| 500+ | 3.67 EUR |
| TC78H600FNG,C,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 2.7V-5.5V 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 20-SSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 2.7V-5.5V 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 20-SSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 3936 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 10+ | 2.32 EUR |
| 25+ | 2.11 EUR |
| 100+ | 1.88 EUR |
| 250+ | 1.76 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.64 EUR |
| TC78S600FNG,C,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPLR 2.7-5.5V 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 20-SSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Description: IC MTR DRV BIPLR 2.7-5.5V 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 20-SSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.88 EUR |
| 10+ | 3.47 EUR |
| 25+ | 3.27 EUR |
| 100+ | 2.8 EUR |
| 250+ | 2.62 EUR |
| 500+ | 2.3 EUR |
| 1000+ | 1.9 EUR |
| TLP3825(TP1,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.5 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 500 mOhms
Description: SSR RELAY SPST-NO 1.5A 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.5 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 500 mOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 7.37 EUR |
| TLP3825(TP1,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-200V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.5 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 500 mOhms
Description: SSR RELAY SPST-NO 1.5A 0-200V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.5 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 500 mOhms
auf Bestellung 3046 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.97 EUR |
| 10+ | 10.63 EUR |
| 100+ | 8.65 EUR |
| 500+ | 8.13 EUR |
| TB67S142NG |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 24-SDIP
Motor Type - Stepper: Unipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER UNIPOLAR 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 24-SDIP
Motor Type - Stepper: Unipolar
Step Resolution: 1, 1/2, 1/4
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.98 EUR |
| 10+ | 6.05 EUR |
| 25+ | 5.57 EUR |
| 100+ | 5.05 EUR |
| 250+ | 4.78 EUR |
| 500+ | 4.64 EUR |
| KIA78L05BP |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 5V DIP
Packaging: Bulk
Part Status: Active
Description: IC REG LINEAR LDO 5V DIP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP551(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 300ns, 1µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 300ns, 1µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP551(Y,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 1µs
Voltage - Output (Max): 15V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 10% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: OPTOCOUPLER TRANS
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 1µs
Voltage - Output (Max): 15V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 10% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP551(Y-LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 300ns, 1µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 300ns, 1µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(MAT-TP5,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP552(LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(MBS,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(Y-LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP552(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP552(TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP552(MAT,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


















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