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2SA1761,T6F(J 2SA1761,T6F(J Toshiba Semiconductor and Storage 2SA1761_2009-12-21.pdf Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SA1761,T6F(M 2SA1761,T6F(M Toshiba Semiconductor and Storage 2SA1761_2009-12-21.pdf Description: TRANS PNP 50V 3A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4274V50 Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 5V TO220
Packaging: Tube
Produkt ist nicht verfügbar
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TPN11006PL,LQ TPN11006PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=54662&prodName=TPN11006PL Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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TPN11006PL,LQ TPN11006PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=54662&prodName=TPN11006PL Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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TPN4R806PL,L1Q TPN4R806PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55571&prodName=TPN4R806PL Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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TPN4R806PL,L1Q TPN4R806PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55571&prodName=TPN4R806PL Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
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TPN7R504PL,LQ TPN7R504PL,LQ Toshiba Semiconductor and Storage TPN7R504PL_datasheet_en_20170413.pdf?did=55436&prodName=TPN7R504PL Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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TPN7R504PL,LQ TPN7R504PL,LQ Toshiba Semiconductor and Storage TPN7R504PL_datasheet_en_20170413.pdf?did=55436&prodName=TPN7R504PL Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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TK040Z65Z,S1F TK040Z65Z,S1F Toshiba Semiconductor and Storage TK040Z65Z_datasheet_en_20181126.pdf?did=63658&prodName=TK040Z65Z Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
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TKR74F04PB,LXGQ TKR74F04PB,LXGQ Toshiba Semiconductor and Storage TKR74F04PB_datasheet_en_20200624.pdf?did=30448&prodName=TKR74F04PB Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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TKR74F04PB,LXGQ TKR74F04PB,LXGQ Toshiba Semiconductor and Storage TKR74F04PB_datasheet_en_20200624.pdf?did=30448&prodName=TKR74F04PB Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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TLP170AM(TPL,E TLP170AM(TPL,E Toshiba Semiconductor and Storage TLP170AM_datasheet_en_20210524.pdf?did=69016&prodName=TLP170AM Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
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TLP170AM(TPL,E TLP170AM(TPL,E Toshiba Semiconductor and Storage TLP170AM_datasheet_en_20210524.pdf?did=69016&prodName=TLP170AM Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
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TLP170GM(TPL,E TLP170GM(TPL,E Toshiba Semiconductor and Storage TLP170GM_datasheet_en_20230522.pdf?did=69102&prodName=TLP170GM Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
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TLP170GM(TPL,E TLP170GM(TPL,E Toshiba Semiconductor and Storage TLP170GM_datasheet_en_20230522.pdf?did=69102&prodName=TLP170GM Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
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TLP170GM(V4TPL,E TLP170GM(V4TPL,E Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 110MA 0-350V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-SMD
Load Current: 110 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP170AM(V4TPL,E TLP170AM(V4TPL,E Toshiba Semiconductor and Storage TLP170AM_datasheet_en_20210524.pdf?did=69016&prodName=TLP170AM Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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TLP170AM(V4TPL,E TLP170AM(V4TPL,E Toshiba Semiconductor and Storage TLP170AM_datasheet_en_20210524.pdf?did=69016&prodName=TLP170AM Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
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TK25V60X,LQ Toshiba Semiconductor and Storage docget.jsp?did=15198&prodName=TK25V60X Description: X35 PB-F POWER MOSFET TRANSISTOR
Produkt ist nicht verfügbar
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2SC5198-O(S1,E 2SC5198-O(S1,E Toshiba Semiconductor and Storage docget.jsp?did=20663&prodName=2SC5198 Description: TRANS NPN 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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TB2941HQ TB2941HQ Toshiba Semiconductor and Storage TB2941HQ.pdf Description: IC AMP CLASS AB QUAD 49W 25HZIP
Part Status: Active
Supplier Device Package: 25-HZIP
Max Output Power x Channels @ Load: 49W x 4 @ 4Ohm
Voltage - Supply: 6V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Through Hole
Output Type: 4-Channel (Quad)
Package / Case: 25-SIP Formed Leads
Features: Mute, Short-Circuit and Thermal Protection, Shutdown
Packaging: Tube
Produkt ist nicht verfügbar
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TK560P60Y,RQ TK560P60Y,RQ Toshiba Semiconductor and Storage TK560P60Y_datasheet_en_20161214.pdf?did=55406&prodName=TK560P60Y Description: MOSFET N-CHANNEL 600V 7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
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2000+1.06 EUR
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TK560P60Y,RQ TK560P60Y,RQ Toshiba Semiconductor and Storage TK560P60Y_datasheet_en_20161214.pdf?did=55406&prodName=TK560P60Y Description: MOSFET N-CHANNEL 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
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CMS30I40A(TE12L,QM Toshiba Semiconductor and Storage docget.jsp?did=15184&prodName=CMS30I40A Description: DIODE SCHOTTKY 40V 3A M-FLAT
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TLP2105(TP,F) TLP2105(TP,F) Toshiba Semiconductor and Storage TLP2105_datasheet_en_20191119.pdf?did=12361&prodName=TLP2105 Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Current - Output / Channel: 25 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB67H451FNG,EL TB67H451FNG,EL Toshiba Semiconductor and Storage docget.jsp?did=68598&prodName=TB67H451FNG Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
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TB67H451FNG,EL TB67H451FNG,EL Toshiba Semiconductor and Storage docget.jsp?did=68598&prodName=TB67H451FNG Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
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TLP160G(OMT7-TPR,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160J(OMT5TRUC,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP160G(IFT7,U,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160J(TPL,U,C,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(T5-TPL,U,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(TPL,U,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(TEE-TPL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(SIEMTPRS,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP160J(V4T7TLUC,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP160J(V4DMT7TR,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP160G(DT-TPL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160J(DMT7-TPL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160J(IFT7,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160J(V4T7TRUC,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP160G(DMT7-TPR,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP160G(IFT5,U,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(T7-TPR,U,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP160J(V4OM5TRUCF Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(MBS-TR,U,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(DMT7-TPL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160J(V4T7,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(T5-TPR,U,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP160G(T7-TPL,U,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160J(T7TL,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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TLP160G(OMT7,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP160J(T7TR,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
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2SA1013-O,T6MIBF(J 2SA1013-O,T6MIBF(J Toshiba Semiconductor and Storage DS_264_2SA1013.pdf Description: TRANS PNP 160V 1A TO-92L
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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TLP3412R(TP,F TLP3412R(TP,F Toshiba Semiconductor and Storage TLP3412R_datasheet_en_20230525.pdf?did=55303&prodName=TLP3412R Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Produkt ist nicht verfügbar
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TLP3412R(TP,F TLP3412R(TP,F Toshiba Semiconductor and Storage TLP3412R_datasheet_en_20230525.pdf?did=55303&prodName=TLP3412R Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
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TLP3412SRHA(TP,E TLP3412SRHA(TP,E Toshiba Semiconductor and Storage docget.jsp?did=69242&prodName=TLP3412SRHA Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
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TLP3412SRHA(TP,E TLP3412SRHA(TP,E Toshiba Semiconductor and Storage docget.jsp?did=69242&prodName=TLP3412SRHA Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
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2SA1761,T6F(J 2SA1761_2009-12-21.pdf
2SA1761,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SA1761,T6F(M 2SA1761_2009-12-21.pdf
2SA1761,T6F(M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4274V50
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 5V TO220
Packaging: Tube
Produkt ist nicht verfügbar
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TPN11006PL,LQ docget.jsp?did=54662&prodName=TPN11006PL
TPN11006PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
3000+0.48 EUR
9000+0.43 EUR
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TPN11006PL,LQ docget.jsp?did=54662&prodName=TPN11006PL
TPN11006PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 17232 Stücke:
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AnzahlPrivatkunde
11+1.96 EUR
18+1.21 EUR
50+0.9 EUR
100+0.8 EUR
500+0.62 EUR
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TPN4R806PL,L1Q docget.jsp?did=55571&prodName=TPN4R806PL
TPN4R806PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.61 EUR
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TPN4R806PL,L1Q docget.jsp?did=55571&prodName=TPN4R806PL
TPN4R806PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
auf Bestellung 9228 Stücke:
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AnzahlPrivatkunde
9+2.56 EUR
14+1.61 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.71 EUR
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TPN7R504PL,LQ TPN7R504PL_datasheet_en_20170413.pdf?did=55436&prodName=TPN7R504PL
TPN7R504PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.48 EUR
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TPN7R504PL,LQ TPN7R504PL_datasheet_en_20170413.pdf?did=55436&prodName=TPN7R504PL
TPN7R504PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4400 Stücke:
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10+2.2 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
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TK040Z65Z,S1F TK040Z65Z_datasheet_en_20181126.pdf?did=63658&prodName=TK040Z65Z
TK040Z65Z,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
auf Bestellung 9 Stücke:
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1+26.04 EUR
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TKR74F04PB,LXGQ TKR74F04PB_datasheet_en_20200624.pdf?did=30448&prodName=TKR74F04PB
TKR74F04PB,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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1000+3.94 EUR
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TKR74F04PB,LXGQ TKR74F04PB_datasheet_en_20200624.pdf?did=30448&prodName=TKR74F04PB
TKR74F04PB,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2763 Stücke:
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2+10.61 EUR
10+7.09 EUR
100+5.07 EUR
500+4.58 EUR
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TLP170AM(TPL,E TLP170AM_datasheet_en_20210524.pdf?did=69016&prodName=TLP170AM
TLP170AM(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 90000 Stücke:
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3000+1.8 EUR
6000+1.74 EUR
9000+1.7 EUR
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TLP170AM(TPL,E TLP170AM_datasheet_en_20210524.pdf?did=69016&prodName=TLP170AM
TLP170AM(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 92019 Stücke:
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AnzahlPrivatkunde
8+2.7 EUR
10+2.39 EUR
25+2.28 EUR
50+2.21 EUR
100+2.13 EUR
250+2.03 EUR
500+1.96 EUR
1000+1.9 EUR
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TLP170GM(TPL,E TLP170GM_datasheet_en_20230522.pdf?did=69102&prodName=TLP170GM
TLP170GM(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 9000 Stücke:
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3000+1.8 EUR
6000+1.74 EUR
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TLP170GM(TPL,E TLP170GM_datasheet_en_20230522.pdf?did=69102&prodName=TLP170GM
TLP170GM(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 10080 Stücke:
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8+2.7 EUR
10+2.39 EUR
25+2.28 EUR
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250+2.03 EUR
500+1.96 EUR
1000+1.9 EUR
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TLP170GM(V4TPL,E
TLP170GM(V4TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-SMD
Load Current: 110 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TLP170AM(V4TPL,E TLP170AM_datasheet_en_20210524.pdf?did=69016&prodName=TLP170AM
TLP170AM(V4TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.8 EUR
6000+1.74 EUR
9000+1.7 EUR
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TLP170AM(V4TPL,E TLP170AM_datasheet_en_20210524.pdf?did=69016&prodName=TLP170AM
TLP170AM(V4TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 73924 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.7 EUR
10+2.39 EUR
25+2.28 EUR
50+2.21 EUR
100+2.13 EUR
250+2.03 EUR
500+1.96 EUR
1000+1.9 EUR
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TK25V60X,LQ docget.jsp?did=15198&prodName=TK25V60X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2SC5198-O(S1,E docget.jsp?did=20663&prodName=2SC5198
2SC5198-O(S1,E
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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TB2941HQ TB2941HQ.pdf
TB2941HQ
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP CLASS AB QUAD 49W 25HZIP
Part Status: Active
Supplier Device Package: 25-HZIP
Max Output Power x Channels @ Load: 49W x 4 @ 4Ohm
Voltage - Supply: 6V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Through Hole
Output Type: 4-Channel (Quad)
Package / Case: 25-SIP Formed Leads
Features: Mute, Short-Circuit and Thermal Protection, Shutdown
Packaging: Tube
Produkt ist nicht verfügbar
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TK560P60Y,RQ TK560P60Y_datasheet_en_20161214.pdf?did=55406&prodName=TK560P60Y
TK560P60Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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2000+1.06 EUR
4000+0.99 EUR
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TK560P60Y,RQ TK560P60Y_datasheet_en_20161214.pdf?did=55406&prodName=TK560P60Y
TK560P60Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
auf Bestellung 5557 Stücke:
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6+3.64 EUR
10+2.32 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.14 EUR
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CMS30I40A(TE12L,QM docget.jsp?did=15184&prodName=CMS30I40A
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 3A M-FLAT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TLP2105(TP,F) TLP2105_datasheet_en_20191119.pdf?did=12361&prodName=TLP2105
TLP2105(TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Current - Output / Channel: 25 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TB67H451FNG,EL docget.jsp?did=68598&prodName=TB67H451FNG
TB67H451FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3500+1.15 EUR
7000+1.13 EUR
10500+1.12 EUR
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TB67H451FNG,EL docget.jsp?did=68598&prodName=TB67H451FNG
TB67H451FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
auf Bestellung 13567 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.39 EUR
13+1.74 EUR
25+1.57 EUR
100+1.39 EUR
250+1.31 EUR
500+1.25 EUR
1000+1.24 EUR
Mindestbestellmenge: 9 Stücke
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TLP160G(OMT7-TPR,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160J(OMT5TRUC,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP160G(IFT7,U,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160J(TPL,U,C,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160G(T5-TPL,U,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP160G(TPL,U,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160G(TEE-TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160G(SIEMTPRS,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP160J(V4T7TLUC,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP160J(V4DMT7TR,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP160G(DT-TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160J(DMT7-TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160G(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160J(IFT7,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160J(V4T7TRUC,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP160G(DMT7-TPR,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP160G(IFT5,U,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160G(T7-TPR,U,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP160J(V4OM5TRUCF
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160G(MBS-TR,U,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160G(DMT7-TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP160J(V4T7,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP160G(T5-TPR,U,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP160G(T7-TPL,U,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP160J(T7TL,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP160G(OMT7,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP160J(T7TR,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SA1013-O,T6MIBF(J DS_264_2SA1013.pdf
2SA1013-O,T6MIBF(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 1A TO-92L
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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TLP3412R(TP,F TLP3412R_datasheet_en_20230525.pdf?did=55303&prodName=TLP3412R
TLP3412R(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TLP3412R(TP,F TLP3412R_datasheet_en_20230525.pdf?did=55303&prodName=TLP3412R
TLP3412R(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Produkt ist nicht verfügbar
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TLP3412SRHA(TP,E docget.jsp?did=69242&prodName=TLP3412SRHA
TLP3412SRHA(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+7.82 EUR
Mindestbestellmenge: 2500 Stücke
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TLP3412SRHA(TP,E docget.jsp?did=69242&prodName=TLP3412SRHA
TLP3412SRHA(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 17589 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.58 EUR
10+10.33 EUR
25+9.85 EUR
50+9.52 EUR
100+9.2 EUR
250+8.78 EUR
500+8.47 EUR
1000+8.19 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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