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TLP2312(TPL,E TLP2312(TPL,E Toshiba Semiconductor and Storage datasheet_en_20200331.pdf?did=68841 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 4449 Stücke:
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8+2.39 EUR
11+1.71 EUR
100+1.29 EUR
500+1.1 EUR
1000+1.04 EUR
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CUHS20F30,H3F CUHS20F30,H3F Toshiba Semiconductor and Storage docget.jsp?did=63604&prodName=CUHS20F30 Description: DIODE SCHOTTKY 30V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 380pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
auf Bestellung 15000 Stücke:
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3000+0.14 EUR
6000+0.13 EUR
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CUHS20F30,H3F CUHS20F30,H3F Toshiba Semiconductor and Storage docget.jsp?did=63604&prodName=CUHS20F30 Description: DIODE SCHOTTKY 30V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 380pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
auf Bestellung 17368 Stücke:
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28+0.63 EUR
40+0.44 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
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TC7S00FU,LF TC7S00FU,LF Toshiba Semiconductor and Storage TC7S00FU_datasheet_en_20140301.pdf?did=20177&prodName=TC7S00FU Description: IC GATE NAND 1CH 2-INP USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 12000 Stücke:
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3000+0.16 EUR
6000+0.15 EUR
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TC7S00FU,LF TC7S00FU,LF Toshiba Semiconductor and Storage TC7S00FU_datasheet_en_20140301.pdf?did=20177&prodName=TC7S00FU Description: IC GATE NAND 1CH 2-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 14390 Stücke:
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24+0.74 EUR
32+0.55 EUR
36+0.5 EUR
100+0.34 EUR
250+0.29 EUR
500+0.24 EUR
1000+0.18 EUR
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RN2416,LF RN2416,LF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2416 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
auf Bestellung 6000 Stücke:
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RN2416,LF RN2416,LF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2416 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
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RN2316,LF Toshiba Semiconductor and Storage docget.jsp?did=18872&prodName=RN2316 Description: TRANS PREBIAS PNP 50V 0.1A USM
Produkt ist nicht verfügbar
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RN2316,LF Toshiba Semiconductor and Storage docget.jsp?did=18872&prodName=RN2316 Description: TRANS PREBIAS PNP 50V 0.1A USM
Produkt ist nicht verfügbar
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RN1116,LF(CT RN1116,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1116 Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 6000 Stücke:
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RN1116,LF(CT RN1116,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1116 Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 10170 Stücke:
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TA58M05S(BEF,LB180 TA58M05S(BEF,LB180 Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S(LBS2PP,AQ TA58M05S(LBS2PP,AQ Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S(YAZK,AQ) TA58M05S(YAZK,AQ) Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S(YNS,AQ) TA58M05S(YNS,AQ) Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S,HOTIKIQ(M TA58M05S,HOTIKIQ(M Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S,KDQ(M TA58M05S,KDQ(M Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S,Q(J TA58M05S,Q(J Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S,SUMISQ(M TA58M05S,SUMISQ(M Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TLP5702(D4-LF4,E Toshiba Semiconductor and Storage docget.jsp?did=15207&prodName=TLP5702 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
auf Bestellung 115 Stücke:
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8+2.22 EUR
12+1.57 EUR
Mindestbestellmenge: 8
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TLP5702(LF4,E Toshiba Semiconductor and Storage docget.jsp?did=15207&prodName=TLP5702 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
auf Bestellung 125 Stücke:
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8+2.22 EUR
12+1.57 EUR
125+1.15 EUR
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TLP570(HITM,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP570(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP570(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP570(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP5702(D4-TP,E TLP5702(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=15207&prodName=TLP5702 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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TLP5702(D4,E TLP5702(D4,E Toshiba Semiconductor and Storage docget.jsp?did=15207&prodName=TLP5702 Description: OPTOCOUPLER DRIVER SO6
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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TLP570(FANUC,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP570(MBS,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP160G(SIEMTPLS,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK4R4P06PL,RQ TK4R4P06PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=56993&prodName=TK4R4P06PL Description: MOSFET N-CHANNEL 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
auf Bestellung 2500 Stücke:
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2500+1.02 EUR
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TK4R4P06PL,RQ TK4R4P06PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=56993&prodName=TK4R4P06PL Description: MOSFET N-CHANNEL 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
auf Bestellung 3436 Stücke:
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10+1.76 EUR
15+1.25 EUR
100+1.23 EUR
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TC7W00FK,LF TC7W00FK,LF Toshiba Semiconductor and Storage docget.jsp?did=20197&prodName=TC7W00FK Description: IC GATE NAND 2CH 4-INP US8
Produkt ist nicht verfügbar
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TC7W00FUTE12LF TC7W00FUTE12LF Toshiba Semiconductor and Storage TC7W00F%2CFU%2CFK_2009.pdf Description: IC GATE NAND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC7W32FUTE12LF TC7W32FUTE12LF Toshiba Semiconductor and Storage TC7W32F%28FU%2CFK%29.pdf Description: IC GATE OR 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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SSM6N62TU,LF SSM6N62TU,LF Toshiba Semiconductor and Storage docget.jsp?did=37065&prodName=SSM6N62TU Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
auf Bestellung 12000 Stücke:
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3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
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SSM6N62TU,LF SSM6N62TU,LF Toshiba Semiconductor and Storage docget.jsp?did=37065&prodName=SSM6N62TU Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
auf Bestellung 12922 Stücke:
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17+1.06 EUR
28+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
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TLP3403R(TP,F TLP3403R(TP,F Toshiba Semiconductor and Storage docget.jsp?did=55301&prodName=TLP3403R Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Operating Temperature: -40°C ~ 110°C
Produkt ist nicht verfügbar
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TAR5S35U(TE85L,F) TAR5S35U(TE85L,F) Toshiba Semiconductor and Storage TAR5S35U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S35U Description: IC REG LINEAR 3.5V 200MA UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
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TAR5S35U(TE85L,F) TAR5S35U(TE85L,F) Toshiba Semiconductor and Storage TAR5S35U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S35U Description: IC REG LINEAR 3.5V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
25+0.71 EUR
27+0.67 EUR
Mindestbestellmenge: 22
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TLP3341(TP15,F) TLP3341(TP15,F) Toshiba Semiconductor and Storage TLP3341_datasheet_en_20230622.pdf?did=12948&prodName=TLP3341 Description: SSR RELAY SPST-NO 140MA 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 140 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 10 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+3.07 EUR
3000+2.96 EUR
4500+2.9 EUR
Mindestbestellmenge: 1500
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TLP3341(TP15,F) TLP3341(TP15,F) Toshiba Semiconductor and Storage TLP3341_datasheet_en_20230622.pdf?did=12948&prodName=TLP3341 Description: SSR RELAY SPST-NO 140MA 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 140 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 10 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
auf Bestellung 5962 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.41 EUR
10+4.72 EUR
100+3.72 EUR
500+3.28 EUR
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DF6A6.8FU,LF DF6A6.8FU,LF Toshiba Semiconductor and Storage DF6A6.8FU_datasheet_en_20140301.pdf?did=22269&prodName=DF6A6.8FU Description: TVS DIODE US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Supplier Device Package: US6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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DF6A6.8FU,LF DF6A6.8FU,LF Toshiba Semiconductor and Storage DF6A6.8FU_datasheet_en_20140301.pdf?did=22269&prodName=DF6A6.8FU Description: TVS DIODE US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Supplier Device Package: US6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TTC011B,Q(S Toshiba Semiconductor and Storage TTC011B_datasheet_en_20160209.pdf?did=35681&prodName=TTC011B Description: TRANSISTOR NPN BIPO TO126N
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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TLP3122A(TPL,E TLP3122A(TPL,E Toshiba Semiconductor and Storage datasheet_en_20230525.pdf?did=60353 Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 4 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.96 EUR
6000+1.89 EUR
Mindestbestellmenge: 3000
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TLP3122A(TPL,E TLP3122A(TPL,E Toshiba Semiconductor and Storage datasheet_en_20230525.pdf?did=60353 Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 4 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
auf Bestellung 14814 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.92 EUR
10+2.61 EUR
25+2.49 EUR
50+2.41 EUR
100+2.33 EUR
250+2.22 EUR
500+2.15 EUR
1000+2.07 EUR
Mindestbestellmenge: 7
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TLP3122A(E TLP3122A(E Toshiba Semiconductor and Storage datasheet_en_20230525.pdf?did=60353 Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 4 Lead
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
auf Bestellung 704 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.01 EUR
10+2.69 EUR
25+2.57 EUR
50+2.48 EUR
125+2.37 EUR
250+2.29 EUR
500+2.21 EUR
Mindestbestellmenge: 6
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TLP371(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP371(LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP371(TP5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4987FE,LF(CT RN4987FE,LF(CT Toshiba Semiconductor and Storage RN4987FE_datasheet_en_20210818.pdf?did=19054&prodName=RN4987FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.066 EUR
8000+0.059 EUR
12000+0.056 EUR
20000+0.052 EUR
Mindestbestellmenge: 4000
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TK380P60Y,RQ TK380P60Y,RQ Toshiba Semiconductor and Storage TK380P60Y_datasheet_en_20161115.pdf?did=55882&prodName=TK380P60Y Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.07 EUR
Mindestbestellmenge: 2000
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TK380P60Y,RQ TK380P60Y,RQ Toshiba Semiconductor and Storage TK380P60Y_datasheet_en_20161115.pdf?did=55882&prodName=TK380P60Y Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.63 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.16 EUR
Mindestbestellmenge: 5
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TK33S10N1Z,LQ TK33S10N1Z,LQ Toshiba Semiconductor and Storage TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 4977 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.68 EUR
10+2.37 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 5
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TK33S10N1Z,LXHQ TK33S10N1Z,LXHQ Toshiba Semiconductor and Storage TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.92 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK33S10N1Z,LXHQ TK33S10N1Z,LXHQ Toshiba Semiconductor and Storage TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
10+2.04 EUR
100+1.37 EUR
500+1.09 EUR
1000+1 EUR
Mindestbestellmenge: 6
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TK3R1P04PL,RQ TK3R1P04PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=56265&prodName=TK3R1P04PL Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.82 EUR
Mindestbestellmenge: 2500
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TK3R1P04PL,RQ TK3R1P04PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=56265&prodName=TK3R1P04PL Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 4257 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
11+1.71 EUR
100+1.13 EUR
500+0.98 EUR
Mindestbestellmenge: 8
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TK380P65Y,RQ TK380P65Y,RQ Toshiba Semiconductor and Storage TK380P65Y_datasheet_en_20161115.pdf?did=55884&prodName=TK380P65Y Description: MOSFET N-CHANNEL 650V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.2 EUR
Mindestbestellmenge: 2000
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TLP2312(TPL,E datasheet_en_20200331.pdf?did=68841
TLP2312(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 4449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
11+1.71 EUR
100+1.29 EUR
500+1.1 EUR
1000+1.04 EUR
Mindestbestellmenge: 8
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CUHS20F30,H3F docget.jsp?did=63604&prodName=CUHS20F30
CUHS20F30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 380pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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CUHS20F30,H3F docget.jsp?did=63604&prodName=CUHS20F30
CUHS20F30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 380pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
auf Bestellung 17368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.44 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 28
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TC7S00FU,LF TC7S00FU_datasheet_en_20140301.pdf?did=20177&prodName=TC7S00FU
TC7S00FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
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TC7S00FU,LF TC7S00FU_datasheet_en_20140301.pdf?did=20177&prodName=TC7S00FU
TC7S00FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 14390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
32+0.55 EUR
36+0.5 EUR
100+0.34 EUR
250+0.29 EUR
500+0.24 EUR
1000+0.18 EUR
Mindestbestellmenge: 24
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RN2416,LF docget.jsp?did=18883&prodName=RN2416
RN2416,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
auf Bestellung 6000 Stücke:
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RN2416,LF docget.jsp?did=18883&prodName=RN2416
RN2416,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
auf Bestellung 6000 Stücke:
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RN2316,LF docget.jsp?did=18872&prodName=RN2316
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A USM
Produkt ist nicht verfügbar
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RN2316,LF docget.jsp?did=18872&prodName=RN2316
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A USM
Produkt ist nicht verfügbar
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RN1116,LF(CT docget.jsp?did=18763&prodName=RN1116
RN1116,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1116,LF(CT docget.jsp?did=18763&prodName=RN1116
RN1116,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 10170 Stücke:
Lieferzeit 10-14 Tag (e)
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TA58M05S(BEF,LB180 TA58MxxS_2009-09-30.pdf
TA58M05S(BEF,LB180
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S(LBS2PP,AQ TA58MxxS_2009-09-30.pdf
TA58M05S(LBS2PP,AQ
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S(YAZK,AQ) TA58MxxS_2009-09-30.pdf
TA58M05S(YAZK,AQ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S(YNS,AQ) TA58MxxS_2009-09-30.pdf
TA58M05S(YNS,AQ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S,HOTIKIQ(M TA58MxxS_2009-09-30.pdf
TA58M05S,HOTIKIQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S,KDQ(M TA58MxxS_2009-09-30.pdf
TA58M05S,KDQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S,Q(J TA58MxxS_2009-09-30.pdf
TA58M05S,Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TA58M05S,SUMISQ(M TA58MxxS_2009-09-30.pdf
TA58M05S,SUMISQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500UA TO220NIS
Produkt ist nicht verfügbar
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TLP5702(D4-LF4,E docget.jsp?did=15207&prodName=TLP5702
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
12+1.57 EUR
Mindestbestellmenge: 8
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TLP5702(LF4,E docget.jsp?did=15207&prodName=TLP5702
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
12+1.57 EUR
125+1.15 EUR
Mindestbestellmenge: 8
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TLP570(HITM,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP570(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP570(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP570(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP5702(D4-TP,E docget.jsp?did=15207&prodName=TLP5702
TLP5702(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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TLP5702(D4,E docget.jsp?did=15207&prodName=TLP5702
TLP5702(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER DRIVER SO6
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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TLP570(FANUC,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP570(MBS,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP160G(SIEMTPLS,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK4R4P06PL,RQ docget.jsp?did=56993&prodName=TK4R4P06PL
TK4R4P06PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.02 EUR
Mindestbestellmenge: 2500
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TK4R4P06PL,RQ docget.jsp?did=56993&prodName=TK4R4P06PL
TK4R4P06PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
auf Bestellung 3436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
15+1.25 EUR
100+1.23 EUR
Mindestbestellmenge: 10
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TC7W00FK,LF docget.jsp?did=20197&prodName=TC7W00FK
TC7W00FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 4-INP US8
Produkt ist nicht verfügbar
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TC7W00FUTE12LF TC7W00F%2CFU%2CFK_2009.pdf
TC7W00FUTE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC7W32FUTE12LF TC7W32F%28FU%2CFK%29.pdf
TC7W32FUTE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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SSM6N62TU,LF docget.jsp?did=37065&prodName=SSM6N62TU
SSM6N62TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000
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SSM6N62TU,LF docget.jsp?did=37065&prodName=SSM6N62TU
SSM6N62TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
auf Bestellung 12922 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
28+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
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TLP3403R(TP,F docget.jsp?did=55301&prodName=TLP3403R
TLP3403R(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Operating Temperature: -40°C ~ 110°C
Produkt ist nicht verfügbar
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TAR5S35U(TE85L,F) TAR5S35U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S35U
TAR5S35U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.5V 200MA UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
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TAR5S35U(TE85L,F) TAR5S35U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S35U
TAR5S35U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.5V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
25+0.71 EUR
27+0.67 EUR
Mindestbestellmenge: 22
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TLP3341(TP15,F) TLP3341_datasheet_en_20230622.pdf?did=12948&prodName=TLP3341
TLP3341(TP15,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 140MA 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 140 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 10 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+3.07 EUR
3000+2.96 EUR
4500+2.9 EUR
Mindestbestellmenge: 1500
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TLP3341(TP15,F) TLP3341_datasheet_en_20230622.pdf?did=12948&prodName=TLP3341
TLP3341(TP15,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 140MA 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 140 mA
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 10 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
auf Bestellung 5962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.41 EUR
10+4.72 EUR
100+3.72 EUR
500+3.28 EUR
Mindestbestellmenge: 3
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DF6A6.8FU,LF DF6A6.8FU_datasheet_en_20140301.pdf?did=22269&prodName=DF6A6.8FU
DF6A6.8FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Supplier Device Package: US6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF6A6.8FU,LF DF6A6.8FU_datasheet_en_20140301.pdf?did=22269&prodName=DF6A6.8FU
DF6A6.8FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Supplier Device Package: US6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TTC011B,Q(S TTC011B_datasheet_en_20160209.pdf?did=35681&prodName=TTC011B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN BIPO TO126N
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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TLP3122A(TPL,E datasheet_en_20230525.pdf?did=60353
TLP3122A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 4 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.96 EUR
6000+1.89 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TLP3122A(TPL,E datasheet_en_20230525.pdf?did=60353
TLP3122A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 4 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
auf Bestellung 14814 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+2.61 EUR
25+2.49 EUR
50+2.41 EUR
100+2.33 EUR
250+2.22 EUR
500+2.15 EUR
1000+2.07 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TLP3122A(E datasheet_en_20230525.pdf?did=60353
TLP3122A(E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.4A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 4 Lead
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
auf Bestellung 704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+2.69 EUR
25+2.57 EUR
50+2.48 EUR
125+2.37 EUR
250+2.29 EUR
500+2.21 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TLP371(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP371(LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP371(TP5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4987FE,LF(CT RN4987FE_datasheet_en_20210818.pdf?did=19054&prodName=RN4987FE
RN4987FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.066 EUR
8000+0.059 EUR
12000+0.056 EUR
20000+0.052 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
TK380P60Y,RQ TK380P60Y_datasheet_en_20161115.pdf?did=55882&prodName=TK380P60Y
TK380P60Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.07 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK380P60Y,RQ TK380P60Y_datasheet_en_20161115.pdf?did=55882&prodName=TK380P60Y
TK380P60Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TK33S10N1Z,LQ TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z
TK33S10N1Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 4977 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+2.37 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TK33S10N1Z,LXHQ TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z
TK33S10N1Z,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.92 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK33S10N1Z,LXHQ TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z
TK33S10N1Z,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.04 EUR
100+1.37 EUR
500+1.09 EUR
1000+1 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TK3R1P04PL,RQ docget.jsp?did=56265&prodName=TK3R1P04PL
TK3R1P04PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TK3R1P04PL,RQ docget.jsp?did=56265&prodName=TK3R1P04PL
TK3R1P04PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 4257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
11+1.71 EUR
100+1.13 EUR
500+0.98 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TK380P65Y,RQ TK380P65Y_datasheet_en_20161115.pdf?did=55884&prodName=TK380P65Y
TK380P65Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 650V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.2 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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