Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13523) > Seite 138 nach 226
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| TLP550(NEMIC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550-TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(Y,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(FANUC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP552(MAT-TA,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(MBS-O,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP552 MRON,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(HITACHI,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550 -TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP552(HO,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(PP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550 -LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550 ,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(SANYD-O,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(TOJS-O,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(LF5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(MEIDEN,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(HITNA,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(YASK-O,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(HIT-O,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(TCCJ,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP550(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLP385(BL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOOperating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V |
auf Bestellung 112 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(BLL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 400% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOVce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-BL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOSupplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-BLL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOPackaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLP385(D4-GB,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-GR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-GRH,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-GRL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOOutput Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-Y,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-YH,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 75% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(GB,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(GR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(GRH,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 150% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(GRL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(Y,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 300mV |
auf Bestellung 308 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(YH,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 75% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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TK33S10N1L,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 33A DPAKRds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 500µA Power Dissipation (Max): 125W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2SA1761,F(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 3A TO92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2SA1761,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 3A TO92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2SA1761,T6F(M | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 3A TO-92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TLE4274V50 | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR LDO 5V TO220 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TPN11006PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN11006PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 20232 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN4R806PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 72A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 630mW (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN4R806PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 72A 8TSONPackaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 630mW (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V |
auf Bestellung 9228 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN7R504PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 38A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.4V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN7R504PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 38A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.4V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 4400 Stücke: Lieferzeit 10-14 Tag (e) |
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TK040Z65Z,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 57A TO247-4LPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-4L(T) Vgs(th) (Max) @ Id: 4V @ 2.85mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Current - Continuous Drain (Id) @ 25°C: 57A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-4 |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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TKR74F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 250A TO220SMPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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TKR74F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 250A TO220SMPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2763 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170AM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 700 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170AM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 700 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 76603 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170GM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 110MA 0-350VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 110 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 350 V On-State Resistance (Max): 50 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170GM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 110MA 0-350VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 110 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 350 V On-State Resistance (Max): 50 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 4120 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170GM(V4TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 110MA 0-350V Approval Agency: cUL, UL, VDE Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 500 Ohms Voltage - Load: 0 V ~ 350 V Supplier Device Package: 6-SMD Load Current: 110 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TLP550(NEMIC,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550-TP4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(Y,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(FANUC,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP552(MAT-TA,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(MBS-O,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP552 MRON,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(HITACHI,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550 -TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP552(HO,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(PP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550 -LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550 ,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(SANYD-O,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(TOJS-O,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(LF5,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550-LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(MEIDEN,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(HITNA,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(YASK-O,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(HIT-O,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(TCCJ,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP550(LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP385(BL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TLP385(BLL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| 125+ | 0.49 EUR |
| TLP385(D4,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TLP385(D4-BL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TLP385(D4-BLL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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Im Einkaufswagen
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| TLP385(D4-GB,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TLP385(D4-GR,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TLP385(D4-GRH,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| 125+ | 0.49 EUR |
| TLP385(D4-GRL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| 125+ | 0.49 EUR |
| TLP385(D4-Y,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TLP385(D4-YH,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TLP385(E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TLP385(GB,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| 125+ | 0.49 EUR |
| TLP385(GR,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| TLP385(GRH,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| 125+ | 0.49 EUR |
| TLP385(GRL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TLP385(Y,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| 125+ | 0.49 EUR |
| TLP385(YH,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.7 EUR |
| TK33S10N1L,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Description: MOSFET N-CH 100V 33A DPAK
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1761,F(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1761,T6F(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1761,T6F(M |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 3A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPN11006PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.48 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.43 EUR |
| 15000+ | 0.4 EUR |
| TPN11006PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 20232 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 18+ | 1.23 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |
| TPN4R806PL,L1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.61 EUR |
| TPN4R806PL,L1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
auf Bestellung 9228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 14+ | 1.61 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.76 EUR |
| 2000+ | 0.71 EUR |
| TPN7R504PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.48 EUR |
| TPN7R504PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.2 EUR |
| 16+ | 1.38 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.64 EUR |
| TK040Z65Z,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.04 EUR |
| TKR74F04PB,LXGQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 3.94 EUR |
| TKR74F04PB,LXGQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2763 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.61 EUR |
| 10+ | 7.09 EUR |
| 100+ | 5.07 EUR |
| 500+ | 4.58 EUR |
| TLP170AM(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.8 EUR |
| 6000+ | 1.74 EUR |
| 9000+ | 1.7 EUR |
| TLP170AM(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 76603 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 10+ | 2.4 EUR |
| 25+ | 2.3 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.14 EUR |
| 250+ | 2.03 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.9 EUR |
| TLP170GM(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.8 EUR |
| TLP170GM(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 4120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 10+ | 2.4 EUR |
| 25+ | 2.3 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.14 EUR |
| 250+ | 2.03 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.9 EUR |
| TLP170GM(V4TPL,E |
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-SMD
Load Current: 110 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 110MA 0-350V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-SMD
Load Current: 110 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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Mindestbestellmenge: 3000 Stücke
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