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TLP3412SRH(TP,E TLP3412SRH(TP,E Toshiba Semiconductor and Storage TLP3412SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 400MA 0-60V
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON4T
Load Current: 400 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.5VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+5.41 EUR
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TLP3412SRH(TP,E TLP3412SRH(TP,E Toshiba Semiconductor and Storage TLP3412SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 400MA 0-60V
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON4T
Load Current: 400 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.5VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
auf Bestellung 4733 Stücke:
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10+8.19 EUR
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500+6.01 EUR
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TLP3475R(TP,F TLP3475R(TP,F Toshiba Semiconductor and Storage TLP3475R_datasheet_en_20230526.pdf?did=55304&prodName=TLP3475R Description: SSR RELAY SPST-NO 300MA 0-50V
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 50 V
Part Status: Active
Supplier Device Package: 4-VSONR (1.45x2.75)
Load Current: 300 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.8VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.108", 2.75mm)
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 110°C
auf Bestellung 3000 Stücke:
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TLP3475R(TP,F TLP3475R(TP,F Toshiba Semiconductor and Storage TLP3475R_datasheet_en_20230526.pdf?did=55304&prodName=TLP3475R Description: SSR RELAY SPST-NO 300MA 0-50V
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 50 V
Part Status: Active
Supplier Device Package: 4-VSONR (1.45x2.75)
Load Current: 300 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.8VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.108", 2.75mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
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10+5.3 EUR
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TLP3475SRHA(TP,E TLP3475SRHA(TP,E Toshiba Semiconductor and Storage docget.jsp?did=69244&prodName=TLP3475SRHA Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 15000 Stücke:
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TLP3475SRHA(TP,E TLP3475SRHA(TP,E Toshiba Semiconductor and Storage docget.jsp?did=69244&prodName=TLP3475SRHA Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
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10+9.73 EUR
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50+8.98 EUR
100+8.68 EUR
250+8.28 EUR
500+8 EUR
1000+7.72 EUR
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TLP3417(TP,F) TLP3417(TP,F) Toshiba Semiconductor and Storage docget.jsp?did=15365&prodName=TLP3417 Description: SSR RELAY SPST-NO 120MA 0-80V
Relay Type: Photo-Coupled Relay (Photorelay)
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 12 Ohms
Voltage - Load: 0 V ~ 80 V
Part Status: Active
Supplier Device Package: 4-VSON (1.45x2.45)
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.096", 2.45mm)
Packaging: Tape & Reel (TR)
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TLP3417(TP,F) TLP3417(TP,F) Toshiba Semiconductor and Storage docget.jsp?did=15365&prodName=TLP3417 Description: SSR RELAY SPST-NO 120MA 0-80V
Relay Type: Photo-Coupled Relay (Photorelay)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.096", 2.45mm)
Packaging: Cut Tape (CT)
On-State Resistance (Max): 12 Ohms
Voltage - Load: 0 V ~ 80 V
Part Status: Active
Supplier Device Package: 4-VSON (1.45x2.45)
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
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10+5.56 EUR
25+5.31 EUR
50+5.12 EUR
100+4.95 EUR
250+4.72 EUR
500+4.56 EUR
1000+4.4 EUR
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TLP3407SRA(TP,E TLP3407SRA(TP,E Toshiba Semiconductor and Storage docget.jsp?did=69246&prodName=TLP3407SRA Description: SSR RELAY SPST-NO 1A 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON4T (2x1.45)
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP3407SRA(TP,E TLP3407SRA(TP,E Toshiba Semiconductor and Storage docget.jsp?did=69246&prodName=TLP3407SRA Description: SSR RELAY SPST-NO 1A 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON4T (2x1.45)
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLP3451(TP,F TLP3451(TP,F Toshiba Semiconductor and Storage docget.jsp?did=29659&prodName=TLP3451 Description: SSR RELAY SPST-NO 120MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 15 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 12000 Stücke:
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3000+4.26 EUR
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TLP3451(TP,F TLP3451(TP,F Toshiba Semiconductor and Storage docget.jsp?did=29659&prodName=TLP3451 Description: SSR RELAY SPST-NO 120MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 15 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 14011 Stücke:
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4+6.37 EUR
10+5.68 EUR
25+5.41 EUR
50+5.24 EUR
100+5.06 EUR
250+4.82 EUR
500+4.66 EUR
1000+4.5 EUR
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TLP3440(TP,F TLP3440(TP,F Toshiba Semiconductor and Storage docget.jsp?did=15250&prodName=TLP3440 Description: SSR RELAY SPST-NO 120MA 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 14 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 3000 Stücke:
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3000+3.5 EUR
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TLP3440(TP,F TLP3440(TP,F Toshiba Semiconductor and Storage docget.jsp?did=15250&prodName=TLP3440 Description: SSR RELAY SPST-NO 120MA 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 14 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 5162 Stücke:
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10+5.57 EUR
100+4.39 EUR
500+3.88 EUR
1000+3.71 EUR
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TB62785NG TB62785NG Toshiba Semiconductor and Storage docget.jsp?did=28829&prodName=TB62785NG Description: IC LED DRIVER LINEAR 50MA 24SDIP
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 8
Mounting Type: Through Hole
Voltage - Output: 17V
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 4.5V
Supplier Device Package: 24-SDIP
Topology: Shift Register
Internal Switch(s): Yes
Produkt ist nicht verfügbar
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7UL1G08FS,LF 7UL1G08FS,LF Toshiba Semiconductor and Storage docget.jsp?did=60334&prodName=7UL1G08FS Description: IC AND 1-CIR 2-IN FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
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7UL1G08FS,LF 7UL1G08FS,LF Toshiba Semiconductor and Storage docget.jsp?did=60334&prodName=7UL1G08FS Description: IC AND 1-CIR 2-IN FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
auf Bestellung 19730 Stücke:
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76+0.27 EUR
86+0.25 EUR
101+0.21 EUR
250+0.19 EUR
500+0.18 EUR
2500+0.17 EUR
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7UL1G32FS,LF 7UL1G32FS,LF Toshiba Semiconductor and Storage docget.jsp?did=60335&prodName=7UL1G32FS Description: IC OR 1-CIR 2-IN FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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7UL1G32FS,LF 7UL1G32FS,LF Toshiba Semiconductor and Storage docget.jsp?did=60335&prodName=7UL1G32FS Description: IC OR 1-CIR 2-IN FSV
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
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53+0.39 EUR
76+0.27 EUR
86+0.25 EUR
101+0.21 EUR
250+0.19 EUR
500+0.18 EUR
2500+0.17 EUR
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TCKE805NL,RF TCKE805NL,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCKE805NL,RF TCKE805NL,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
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SSM6K514NU,LF SSM6K514NU,LF Toshiba Semiconductor and Storage docget.jsp?did=53150&prodName=SSM6K514NU Description: MOSFET N-CH 40V 12A 6UDFNB
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
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SSM6K514NU,LF SSM6K514NU,LF Toshiba Semiconductor and Storage docget.jsp?did=53150&prodName=SSM6K514NU Description: MOSFET N-CH 40V 12A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SC2229(TE6SAN1F,M 2SC2229(TE6SAN1F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-O(MIT1F,M) 2SC2229-O(MIT1F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SC2229-O(MITIF,M) 2SC2229-O(MITIF,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(SHP,F,M) 2SC2229-O(SHP,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(SHP1,F,M 2SC2229-O(SHP1,F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(T6MIT1FM 2SC2229-O(T6MIT1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(T6SHP1FM 2SC2229-O(T6SHP1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO92MOD
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(TE6,F,M) 2SC2229-O(TE6,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(MIT,F,M) 2SC2229-Y(MIT,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(MIT1,F,M 2SC2229-Y(MIT1,F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(SHP,F,M) 2SC2229-Y(SHP,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(SHP1,F,M 2SC2229-Y(SHP1,F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(T6MIT1FM 2SC2229-Y(T6MIT1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(T6MITIFM 2SC2229-Y(T6MITIFM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(T6ONK1FM 2SC2229-Y(T6ONK1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(TE6,F,M) 2SC2229-Y(TE6,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y,F(J 2SC2229-Y,F(J Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS24N65FB,S1Q TRS24N65FB,S1Q Toshiba Semiconductor and Storage TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS24N65FB,S1F(S TRS24N65FB,S1F(S Toshiba Semiconductor and Storage TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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SSM6N40TU,LF SSM6N40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11018&prodName=SSM6N40TU Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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SSM6N40TU,LF SSM6N40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11018&prodName=SSM6N40TU Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 13431 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.15 EUR
30+0.71 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
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RFM01U7P(TE12L,F) RFM01U7P(TE12L,F) Toshiba Semiconductor and Storage RFM01U7P_datasheet_en_20140301.pdf?did=22464&prodName=RFM01U7P Description: RF MOSFET 7.2V PW-MINI
Current - Test: 100 mA
Voltage - Test: 7.2 V
Voltage - Rated: 20 V
Part Status: Not For New Designs
Supplier Device Package: PW-MINI
Technology: MOSFET (Metal Oxide)
Gain: 10.8dB
Power - Output: 1.2W
Configuration: N-Channel
Frequency: 520MHz
Mounting Type: Surface Mount
Current Rating (Amps): 1A
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SC4935-Y,Q(J 2SC4935-Y,Q(J Toshiba Semiconductor and Storage 2SC4935_2010-12-21.pdf Description: TRANS NPN 50V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TLP241A(F TLP241A(F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 4117 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.64 EUR
10+2.36 EUR
25+2.25 EUR
50+2.17 EUR
100+2.09 EUR
300+1.99 EUR
500+1.93 EUR
1000+1.87 EUR
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TLP241A(LF1,F TLP241A(LF1,F Toshiba Semiconductor and Storage docget.jsp?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
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Lieferzeit 10-14 Tag (e)
8+2.64 EUR
10+2.36 EUR
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50+2.17 EUR
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TLP241A(D4,F TLP241A(D4,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 1556 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.25 EUR
10+2.88 EUR
25+2.75 EUR
50+2.65 EUR
100+2.57 EUR
300+2.43 EUR
500+2.37 EUR
1000+2.28 EUR
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TK160F10N1,LXGQ TK160F10N1,LXGQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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1000+3.39 EUR
3000+3.15 EUR
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TK160F10N1,LXGQ TK160F10N1,LXGQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 160A TO220SM
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
auf Bestellung 4332 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.37 EUR
10+6.19 EUR
50+4.83 EUR
100+4.4 EUR
500+3.86 EUR
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2SB1457,T6TOTOF(J 2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage 2SB1457_2009-12-21.pdf Description: TRANS PNP 100V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2630(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2630(MAT,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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TLP2630(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage docget.jsp?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
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SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage docget.jsp?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
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TC7WZ08FK,LJ(CT TC7WZ08FK,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=54672&prodName=TC7WZ08FK Description: IC GATE AND 2CH 4-INP US8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TC7SB3157CFU,LF(CT TC7SB3157CFU,LF(CT Toshiba Semiconductor and Storage TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 36000 Stücke:
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3000+0.1 EUR
6000+0.1 EUR
9000+0.099 EUR
15000+0.098 EUR
21000+0.096 EUR
30000+0.095 EUR
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TC7SB3157CFU,LF(CT TC7SB3157CFU,LF(CT Toshiba Semiconductor and Storage TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 38631 Stücke:
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72+0.3 EUR
112+0.19 EUR
126+0.17 EUR
149+0.14 EUR
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500+0.12 EUR
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TLP3412SRH(TP,E TLP3412SRH_Prelim_DS.pdf
TLP3412SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON4T
Load Current: 400 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.5VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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TLP3412SRH(TP,E TLP3412SRH_Prelim_DS.pdf
TLP3412SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON4T
Load Current: 400 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.5VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
auf Bestellung 4733 Stücke:
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2+10.91 EUR
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TLP3475R(TP,F TLP3475R_datasheet_en_20230526.pdf?did=55304&prodName=TLP3475R
TLP3475R(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 300MA 0-50V
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 50 V
Part Status: Active
Supplier Device Package: 4-VSONR (1.45x2.75)
Load Current: 300 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.8VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.108", 2.75mm)
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 110°C
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+3.18 EUR
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TLP3475R(TP,F TLP3475R_datasheet_en_20230526.pdf?did=55304&prodName=TLP3475R
TLP3475R(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 300MA 0-50V
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 50 V
Part Status: Active
Supplier Device Package: 4-VSONR (1.45x2.75)
Load Current: 300 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.8VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.108", 2.75mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
auf Bestellung 6548 Stücke:
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3+7.77 EUR
10+5.3 EUR
100+4.02 EUR
500+3.52 EUR
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TLP3475SRHA(TP,E docget.jsp?did=69244&prodName=TLP3475SRHA
TLP3475SRHA(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+7.38 EUR
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TLP3475SRHA(TP,E docget.jsp?did=69244&prodName=TLP3475SRHA
TLP3475SRHA(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 15353 Stücke:
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2+10.94 EUR
10+9.73 EUR
25+9.31 EUR
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250+8.28 EUR
500+8 EUR
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TLP3417(TP,F) docget.jsp?did=15365&prodName=TLP3417
TLP3417(TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-80V
Relay Type: Photo-Coupled Relay (Photorelay)
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 12 Ohms
Voltage - Load: 0 V ~ 80 V
Part Status: Active
Supplier Device Package: 4-VSON (1.45x2.45)
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.096", 2.45mm)
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
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3000+4.16 EUR
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TLP3417(TP,F) docget.jsp?did=15365&prodName=TLP3417
TLP3417(TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-80V
Relay Type: Photo-Coupled Relay (Photorelay)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.096", 2.45mm)
Packaging: Cut Tape (CT)
On-State Resistance (Max): 12 Ohms
Voltage - Load: 0 V ~ 80 V
Part Status: Active
Supplier Device Package: 4-VSON (1.45x2.45)
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
auf Bestellung 19234 Stücke:
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4+6.24 EUR
10+5.56 EUR
25+5.31 EUR
50+5.12 EUR
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250+4.72 EUR
500+4.56 EUR
1000+4.4 EUR
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TLP3407SRA(TP,E docget.jsp?did=69246&prodName=TLP3407SRA
TLP3407SRA(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON4T (2x1.45)
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP3407SRA(TP,E docget.jsp?did=69246&prodName=TLP3407SRA
TLP3407SRA(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON4T (2x1.45)
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLP3451(TP,F docget.jsp?did=29659&prodName=TLP3451
TLP3451(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 15 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 12000 Stücke:
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3000+4.26 EUR
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TLP3451(TP,F docget.jsp?did=29659&prodName=TLP3451
TLP3451(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 15 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 14011 Stücke:
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4+6.37 EUR
10+5.68 EUR
25+5.41 EUR
50+5.24 EUR
100+5.06 EUR
250+4.82 EUR
500+4.66 EUR
1000+4.5 EUR
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TLP3440(TP,F docget.jsp?did=15250&prodName=TLP3440
TLP3440(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 14 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+3.5 EUR
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TLP3440(TP,F docget.jsp?did=15250&prodName=TLP3440
TLP3440(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 14 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 5162 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.56 EUR
10+5.57 EUR
100+4.39 EUR
500+3.88 EUR
1000+3.71 EUR
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TB62785NG docget.jsp?did=28829&prodName=TB62785NG
TB62785NG
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 50MA 24SDIP
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 8
Mounting Type: Through Hole
Voltage - Output: 17V
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 4.5V
Supplier Device Package: 24-SDIP
Topology: Shift Register
Internal Switch(s): Yes
Produkt ist nicht verfügbar
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7UL1G08FS,LF docget.jsp?did=60334&prodName=7UL1G08FS
7UL1G08FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC AND 1-CIR 2-IN FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
10000+0.15 EUR
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7UL1G08FS,LF docget.jsp?did=60334&prodName=7UL1G08FS
7UL1G08FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC AND 1-CIR 2-IN FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
auf Bestellung 19730 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
76+0.27 EUR
86+0.25 EUR
101+0.21 EUR
250+0.19 EUR
500+0.18 EUR
2500+0.17 EUR
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7UL1G32FS,LF docget.jsp?did=60335&prodName=7UL1G32FS
7UL1G32FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OR 1-CIR 2-IN FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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7UL1G32FS,LF docget.jsp?did=60335&prodName=7UL1G32FS
7UL1G32FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OR 1-CIR 2-IN FSV
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
auf Bestellung 6739 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
76+0.27 EUR
86+0.25 EUR
101+0.21 EUR
250+0.19 EUR
500+0.18 EUR
2500+0.17 EUR
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TCKE805NL,RF docget.jsp?did=139443&prodName=TCKE805NL
TCKE805NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCKE805NL,RF docget.jsp?did=139443&prodName=TCKE805NL
TCKE805NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.84 EUR
11+2.08 EUR
25+1.89 EUR
100+1.69 EUR
Mindestbestellmenge: 8 Stücke
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SSM6K514NU,LF docget.jsp?did=53150&prodName=SSM6K514NU
SSM6K514NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
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SSM6K514NU,LF docget.jsp?did=53150&prodName=SSM6K514NU
SSM6K514NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SC2229(TE6SAN1F,M 2SC2229_2009-12-21.pdf
2SC2229(TE6SAN1F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-O(MIT1F,M) 2SC2229_2009-12-21.pdf
2SC2229-O(MIT1F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SC2229-O(MITIF,M) 2SC2229_2009-12-21.pdf
2SC2229-O(MITIF,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SC2229-O(SHP,F,M) 2SC2229_2009-12-21.pdf
2SC2229-O(SHP,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SC2229-O(SHP1,F,M 2SC2229_2009-12-21.pdf
2SC2229-O(SHP1,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SC2229-O(T6MIT1FM 2SC2229_2009-12-21.pdf
2SC2229-O(T6MIT1FM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(T6SHP1FM 2SC2229_2009-12-21.pdf
2SC2229-O(T6SHP1FM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO92MOD
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-O(TE6,F,M) 2SC2229_2009-12-21.pdf
2SC2229-O(TE6,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(MIT,F,M) 2SC2229_2009-12-21.pdf
2SC2229-Y(MIT,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(MIT1,F,M 2SC2229_2009-12-21.pdf
2SC2229-Y(MIT1,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(SHP,F,M) 2SC2229_2009-12-21.pdf
2SC2229-Y(SHP,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(SHP1,F,M 2SC2229_2009-12-21.pdf
2SC2229-Y(SHP1,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Produkt ist nicht verfügbar
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2SC2229-Y(T6MIT1FM 2SC2229_2009-12-21.pdf
2SC2229-Y(T6MIT1FM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SC2229-Y(T6MITIFM 2SC2229_2009-12-21.pdf
2SC2229-Y(T6MITIFM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SC2229-Y(T6ONK1FM 2SC2229_2009-12-21.pdf
2SC2229-Y(T6ONK1FM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(TE6,F,M) 2SC2229_2009-12-21.pdf
2SC2229-Y(TE6,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y,F(J 2SC2229_2009-12-21.pdf
2SC2229-Y,F(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS24N65FB,S1Q TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB
TRS24N65FB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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TRS24N65FB,S1F(S TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB
TRS24N65FB,S1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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SSM6N40TU,LF docget.jsp?did=11018&prodName=SSM6N40TU
SSM6N40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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SSM6N40TU,LF docget.jsp?did=11018&prodName=SSM6N40TU
SSM6N40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 13431 Stücke:
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19+1.15 EUR
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100+0.45 EUR
500+0.35 EUR
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RFM01U7P(TE12L,F) RFM01U7P_datasheet_en_20140301.pdf?did=22464&prodName=RFM01U7P
RFM01U7P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 7.2V PW-MINI
Current - Test: 100 mA
Voltage - Test: 7.2 V
Voltage - Rated: 20 V
Part Status: Not For New Designs
Supplier Device Package: PW-MINI
Technology: MOSFET (Metal Oxide)
Gain: 10.8dB
Power - Output: 1.2W
Configuration: N-Channel
Frequency: 520MHz
Mounting Type: Surface Mount
Current Rating (Amps): 1A
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SC4935-Y,Q(J 2SC4935_2010-12-21.pdf
2SC4935-Y,Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TLP241A(F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 4117 Stücke:
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8+2.64 EUR
10+2.36 EUR
25+2.25 EUR
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TLP241A(LF1,F docget.jsp?did=14237&prodName=TLP241A
TLP241A(LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 278 Stücke:
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TLP241A(D4,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(D4,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 1556 Stücke:
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7+3.25 EUR
10+2.88 EUR
25+2.75 EUR
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TK160F10N1,LXGQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK160F10N1,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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1000+3.39 EUR
3000+3.15 EUR
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TK160F10N1,LXGQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK160F10N1,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
auf Bestellung 4332 Stücke:
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3+9.37 EUR
10+6.19 EUR
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2SB1457,T6TOTOF(J 2SB1457_2009-12-21.pdf
2SB1457,T6TOTOF(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 100V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2630(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2630(MAT,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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TLP2630(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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SSM6N815R,LF docget.jsp?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 7700 Stücke:
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3000+0.33 EUR
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SSM6N815R,LF docget.jsp?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 8216 Stücke:
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15+1.43 EUR
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TC7WZ08FK,LJ(CT docget.jsp?did=54672&prodName=TC7WZ08FK
TC7WZ08FK,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 4-INP US8
Produkt ist nicht verfügbar
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TC7SB3157CFU,LF(CT TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 36000 Stücke:
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3000+0.1 EUR
6000+0.1 EUR
9000+0.099 EUR
15000+0.098 EUR
21000+0.096 EUR
30000+0.095 EUR
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TC7SB3157CFU,LF(CT TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 38631 Stücke:
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72+0.3 EUR
112+0.19 EUR
126+0.17 EUR
149+0.14 EUR
250+0.13 EUR
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