Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Seite 139 nach 226
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| TLP550(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLP385(BL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOOperating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V |
auf Bestellung 112 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(BLL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 400% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOVce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-BL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOSupplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-BLL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOPackaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLP385(D4-GB,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-GR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-GRH,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-GRL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOOutput Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-Y,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(D4-YH,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 75% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(GB,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(GR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(GRH,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 150% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(GRL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(Y,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 300mV |
auf Bestellung 308 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP385(YH,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SO, 4 Lead Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 75% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tube |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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TK33S10N1L,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 33A DPAKRds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 500µA Power Dissipation (Max): 125W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2SA1761,F(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 3A TO92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2SA1761,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 3A TO92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2SA1761,T6F(M | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 3A TO-92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TLE4274V50 | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR LDO 5V TO220 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TPN11006PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN11006PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 22730 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN4R806PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 72A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 630mW (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN4R806PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 72A 8TSONPackaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 630mW (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V |
auf Bestellung 9228 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN7R504PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 38A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.4V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN7R504PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 38A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.4V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 4400 Stücke: Lieferzeit 10-14 Tag (e) |
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TK040Z65Z,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 57A TO247-4LPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-4L(T) Vgs(th) (Max) @ Id: 4V @ 2.85mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Current - Continuous Drain (Id) @ 25°C: 57A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-4 |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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TKR74F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 250A TO220SMPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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TKR74F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 250A TO220SMPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2763 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170AM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 700 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170AM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 700 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 31483 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170GM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 110MA 0-350VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 110 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 350 V On-State Resistance (Max): 50 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170GM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 110MA 0-350VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 110 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 350 V On-State Resistance (Max): 50 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
auf Bestellung 10343 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170GM(V4TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 110MA 0-350V Approval Agency: cUL, UL, VDE Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 500 Ohms Voltage - Load: 0 V ~ 350 V Supplier Device Package: 6-SMD Load Current: 110 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLP170AM(V4TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VRelay Type: Photo-Coupled Relay (Photorelay) Approval Agency: cUL, UL, VDE Operating Temperature: -55°C ~ 125°C On-State Resistance (Max): 300 mOhms Voltage - Load: 0 V ~ 60 V Part Status: Active Supplier Device Package: 6-SMD Load Current: 700 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP170AM(V4TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VRelay Type: Photo-Coupled Relay (Photorelay) On-State Resistance (Max): 300 mOhms Voltage - Load: 0 V ~ 60 V Part Status: Active Supplier Device Package: 6-SMD Load Current: 700 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Approval Agency: cUL, UL, VDE Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 20350 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK25V60X,LQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2SC5198-O(S1,E | Toshiba Semiconductor and Storage |
Description: TRANS NPN 140V 10A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P(N) Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 100 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TB2941HQ | Toshiba Semiconductor and Storage |
Description: IC AMP CLASS AB QUAD 49W 25HZIPPart Status: Active Supplier Device Package: 25-HZIP Max Output Power x Channels @ Load: 49W x 4 @ 4Ohm Voltage - Supply: 6V ~ 18V Operating Temperature: -40°C ~ 85°C (TA) Type: Class AB Mounting Type: Through Hole Output Type: 4-Channel (Quad) Package / Case: 25-SIP Formed Leads Features: Mute, Short-Circuit and Thermal Protection, Shutdown Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TK560P60Y,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 600V 7A DPAKDrive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 240µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK560P60Y,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 600V 7A DPAKInput Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 240µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V |
auf Bestellung 5557 Stücke: Lieferzeit 10-14 Tag (e) |
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| CMS30I40A(TE12L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 3A M-FLAT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLP2105(TP,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SOCurrent - Output / Channel: 25 mA Number of Channels: 2 Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 10kV/µs Rise / Fall Time (Typ): 30ns, 30ns Supplier Device Package: 8-SO Inputs - Side 1/Side 2: 2/0 Current - DC Forward (If) (Max): 20mA Voltage - Isolation: 2500Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.65V Voltage - Supply: 4.5V ~ 20V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TB67H451FNG,EL | Toshiba Semiconductor and Storage |
Description: 50V/3A BRUSHED MOTOR DRIVERPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 3.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge Voltage - Supply: 2V ~ 5.5V Applications: General Purpose Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - AC, DC: Brushed DC Part Status: Not For New Designs |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67H451FNG,EL | Toshiba Semiconductor and Storage |
Description: 50V/3A BRUSHED MOTOR DRIVERPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 3.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge Voltage - Supply: 2V ~ 5.5V Applications: General Purpose Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - AC, DC: Brushed DC Part Status: Not For New Designs |
auf Bestellung 13623 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLP160G(OMT7-TPR,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160J(OMT5TRUC,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160G(IFT7,U,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160J(TPL,U,C,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160G(T5-TPL,U,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160G(TPL,U,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160G(TEE-TPL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160G(SIEMTPRS,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160J(V4T7TLUC,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160J(V4DMT7TR,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TLP160G(DT-TPL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TLP550(LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP385(BL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TLP385(BLL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| 125+ | 0.41 EUR |
| TLP385(D4,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TLP385(D4-BL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TLP385(D4-BLL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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Im Einkaufswagen
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| TLP385(D4-GB,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TLP385(D4-GR,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TLP385(D4-GRH,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| 125+ | 0.41 EUR |
| TLP385(D4-GRL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| 125+ | 0.41 EUR |
| TLP385(D4-Y,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TLP385(D4-YH,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TLP385(E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TLP385(GB,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| 125+ | 0.41 EUR |
| TLP385(GR,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| TLP385(GRH,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| 125+ | 0.41 EUR |
| TLP385(GRL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TLP385(Y,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| 125+ | 0.41 EUR |
| TLP385(YH,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tube
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.59 EUR |
| TK33S10N1L,LQ |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Description: MOSFET N-CH 100V 33A DPAK
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1761,F(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1761,T6F(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1761,T6F(M |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 3A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPN11006PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.44 EUR |
| 6000+ | 0.4 EUR |
| 9000+ | 0.39 EUR |
| 15000+ | 0.38 EUR |
| TPN11006PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 22730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.8 EUR |
| 16+ | 1.12 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| TPN4R806PL,L1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.51 EUR |
| TPN4R806PL,L1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
auf Bestellung 9228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.15 EUR |
| 14+ | 1.35 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.64 EUR |
| 2000+ | 0.6 EUR |
| TPN7R504PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.4 EUR |
| TPN7R504PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.85 EUR |
| 16+ | 1.16 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.54 EUR |
| TK040Z65Z,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.88 EUR |
| TKR74F04PB,LXGQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 3.24 EUR |
| TKR74F04PB,LXGQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2763 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.73 EUR |
| 10+ | 5.82 EUR |
| 100+ | 4.17 EUR |
| 500+ | 3.76 EUR |
| TLP170AM(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.34 EUR |
| 6000+ | 1.3 EUR |
| 9000+ | 1.27 EUR |
| TLP170AM(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 31483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 10+ | 1.79 EUR |
| 25+ | 1.71 EUR |
| 50+ | 1.65 EUR |
| 100+ | 1.59 EUR |
| 250+ | 1.52 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.42 EUR |
| TLP170GM(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.34 EUR |
| 6000+ | 1.29 EUR |
| 9000+ | 1.27 EUR |
| TLP170GM(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 10343 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 10+ | 1.78 EUR |
| 25+ | 1.7 EUR |
| 50+ | 1.64 EUR |
| 100+ | 1.59 EUR |
| 250+ | 1.52 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.41 EUR |
| TLP170GM(V4TPL,E |
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-SMD
Load Current: 110 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 110MA 0-350V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-SMD
Load Current: 110 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLP170AM(V4TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.47 EUR |
| 6000+ | 1.42 EUR |
| 9000+ | 1.39 EUR |
| TLP170AM(V4TPL,E |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 20350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.2 EUR |
| 10+ | 1.96 EUR |
| 25+ | 1.87 EUR |
| 50+ | 1.8 EUR |
| 100+ | 1.74 EUR |
| 250+ | 1.66 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.55 EUR |
| TK25V60X,LQ |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Description: X35 PB-F POWER MOSFET TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2SC5198-O(S1,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Description: TRANS NPN 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TB2941HQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP CLASS AB QUAD 49W 25HZIP
Part Status: Active
Supplier Device Package: 25-HZIP
Max Output Power x Channels @ Load: 49W x 4 @ 4Ohm
Voltage - Supply: 6V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Through Hole
Output Type: 4-Channel (Quad)
Package / Case: 25-SIP Formed Leads
Features: Mute, Short-Circuit and Thermal Protection, Shutdown
Packaging: Tube
Description: IC AMP CLASS AB QUAD 49W 25HZIP
Part Status: Active
Supplier Device Package: 25-HZIP
Max Output Power x Channels @ Load: 49W x 4 @ 4Ohm
Voltage - Supply: 6V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Through Hole
Output Type: 4-Channel (Quad)
Package / Case: 25-SIP Formed Leads
Features: Mute, Short-Circuit and Thermal Protection, Shutdown
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TK560P60Y,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Description: MOSFET N-CHANNEL 600V 7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.89 EUR |
| 4000+ | 0.83 EUR |
| TK560P60Y,RQ |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Description: MOSFET N-CHANNEL 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
auf Bestellung 5557 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.96 EUR |
| CMS30I40A(TE12L,QM |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 3A M-FLAT
Description: DIODE SCHOTTKY 40V 3A M-FLAT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLP2105(TP,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Current - Output / Channel: 25 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Current - Output / Channel: 25 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TB67H451FNG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3500+ | 0.96 EUR |
| 7000+ | 0.94 EUR |
| 10500+ | 0.93 EUR |
| TB67H451FNG,EL |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
auf Bestellung 13623 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 13+ | 1.45 EUR |
| 25+ | 1.31 EUR |
| 100+ | 1.16 EUR |
| 250+ | 1.09 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 1.03 EUR |
| TLP160J(OMT5TRUC,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP160G(SIEMTPRS,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP160J(V4T7TLUC,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP160J(V4DMT7TR,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH















