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2SC4935-Y,Q(J 2SC4935-Y,Q(J Toshiba Semiconductor and Storage 2SC4935_2010-12-21.pdf Description: TRANS NPN 50V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TLP241A(F TLP241A(F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 3850 Stücke:
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9+2.57 EUR
10+2.3 EUR
25+2.2 EUR
50+2.12 EUR
100+2.05 EUR
300+1.94 EUR
500+1.89 EUR
1000+1.82 EUR
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TLP241A(LF1,F TLP241A(LF1,F Toshiba Semiconductor and Storage docget.jsp?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 278 Stücke:
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TLP241A(D4,F TLP241A(D4,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
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50+2.65 EUR
100+2.57 EUR
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500+2.37 EUR
1000+2.28 EUR
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TK160F10N1,LXGQ TK160F10N1,LXGQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Qualification: AEC-Q101
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3000+3.15 EUR
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TK160F10N1,LXGQ TK160F10N1,LXGQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4332 Stücke:
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2SB1457,T6TOTOF(J 2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage 2SB1457_2009-12-21.pdf Description: TRANS PNP 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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TLP2630(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP2630(MAT,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP2630(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage docget.jsp?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
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3000+0.35 EUR
9000+0.3 EUR
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SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage docget.jsp?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 30902 Stücke:
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100+0.58 EUR
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TC7WZ08FK,LJ(CT TC7WZ08FK,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=54672&prodName=TC7WZ08FK Description: IC GATE AND 2CH 4-INP US8
Produkt ist nicht verfügbar
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TC7SB3157CFU,LF(CT TC7SB3157CFU,LF(CT Toshiba Semiconductor and Storage TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 36000 Stücke:
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3000+0.1 EUR
6000+0.1 EUR
9000+0.099 EUR
15000+0.098 EUR
21000+0.096 EUR
30000+0.095 EUR
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TC7SB3157CFU,LF(CT TC7SB3157CFU,LF(CT Toshiba Semiconductor and Storage TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
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112+0.19 EUR
126+0.17 EUR
149+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.12 EUR
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TRS12N65FB,S1Q TRS12N65FB,S1Q Toshiba Semiconductor and Storage docget.jsp?did=69233&prodName=TRS12N65FB Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 90 Stücke:
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TK099V65Z,LQ TK099V65Z,LQ Toshiba Semiconductor and Storage TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
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TK099V65Z,LQ TK099V65Z,LQ Toshiba Semiconductor and Storage TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
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500+6 EUR
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TBD62781AFWG,EL TBD62781AFWG,EL Toshiba Semiconductor and Storage TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Produkt ist nicht verfügbar
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TBD62781AFWG,EL TBD62781AFWG,EL Toshiba Semiconductor and Storage TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 296 Stücke:
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TBD62786AFWG,EL TBD62786AFWG,EL Toshiba Semiconductor and Storage TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
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TBD62786AFWG,EL TBD62786AFWG,EL Toshiba Semiconductor and Storage TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
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TBD62786APG TBD62786APG Toshiba Semiconductor and Storage TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG Description: IC PWR DRIVER P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
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2SA2215,LF 2SA2215,LF Toshiba Semiconductor and Storage docget.jsp?did=22651&prodName=2SA2215 Description: TRANS PNP 20V 2.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
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2SA2215,LF 2SA2215,LF Toshiba Semiconductor and Storage docget.jsp?did=22651&prodName=2SA2215 Description: TRANS PNP 20V 2.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
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500+0.36 EUR
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TA76432AS,T6F(J TA76432AS,T6F(J Toshiba Semiconductor and Storage TA76432A_Series_2011-09-29.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TA76432S(F,M) TA76432S(F,M) Toshiba Semiconductor and Storage TA76432FT%2CFC%2CF%2CFR%2CS.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TA76432S(T6MURATFM TA76432S(T6MURATFM Toshiba Semiconductor and Storage TA76432FT,FC,F,FR,S.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S(TE6,F,M) TA76432S(TE6,F,M) Toshiba Semiconductor and Storage TA76432FT%2CFC%2CF%2CFR%2CS.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,F(J TA76432S,F(J Toshiba Semiconductor and Storage TA76432FT%2CFC%2CF%2CFR%2CS.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,T6F(J TA76432S,T6F(J Toshiba Semiconductor and Storage TA76432FT,FC,F,FR,S.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,T6MURAF(J TA76432S,T6MURAF(J Toshiba Semiconductor and Storage TA76432FT%2CFC%2CF%2CFR%2CS.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,T6WNLF(J TA76432S,T6WNLF(J Toshiba Semiconductor and Storage TA76432FT,FC,F,FR,S.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,WNLF(J TA76432S,WNLF(J Toshiba Semiconductor and Storage TA76432FT,FC,F,FR,S.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76L431S(T6SOY,AQ TA76L431S(T6SOY,AQ Toshiba Semiconductor and Storage TA76L431FT%2CS.pdf Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76L431S(T6SOY,QM TA76L431S(T6SOY,QM Toshiba Semiconductor and Storage TA76L431FT%2CS.pdf Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76L431S,Q(J TA76L431S,Q(J Toshiba Semiconductor and Storage TA76L431FT%2CS.pdf Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76L431S,T6Q(J TA76L431S,T6Q(J Toshiba Semiconductor and Storage TA76L431FT%2CS.pdf Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76L431S,T6Q(M TA76L431S,T6Q(M Toshiba Semiconductor and Storage TA76L431FT,S.pdf Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
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KIA78L24BP Toshiba Semiconductor and Storage Description: IC REG LINEAR 24V DIP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TCR3DG10,LF TCR3DG10,LF Toshiba Semiconductor and Storage docget.jsp?did=36247&prodName=TCR3DG10 Description: IC REG LINEAR 1V 300MA 4-WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1V
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.75V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
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TCR3DG10,LF TCR3DG10,LF Toshiba Semiconductor and Storage docget.jsp?did=36247&prodName=TCR3DG10 Description: IC REG LINEAR 1V 300MA 4-WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1V
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.75V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
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79+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
2500+0.18 EUR
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TRS16N65FB,S1Q TRS16N65FB,S1Q Toshiba Semiconductor and Storage datasheet_en_20200703.pdf?did=69235 Description: DIODE ARRAY SIC 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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RN2426(TE85L,F) RN2426(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18885&prodName=RN2426 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Produkt ist nicht verfügbar
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RN2426(TE85L,F) RN2426(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18885&prodName=RN2426 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
auf Bestellung 1980 Stücke:
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TPH1R306PL,L1Q TPH1R306PL,L1Q Toshiba Semiconductor and Storage TPH1R306PL_datasheet_en_20191018.pdf?did=30818&prodName=TPH1R306PL Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
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TPH1R306PL,L1Q TPH1R306PL,L1Q Toshiba Semiconductor and Storage TPH1R306PL_datasheet_en_20191018.pdf?did=30818&prodName=TPH1R306PL Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
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100+2.67 EUR
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MT3S113TU,LF MT3S113TU,LF Toshiba Semiconductor and Storage MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
Produkt ist nicht verfügbar
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MT3S113TU,LF MT3S113TU,LF Toshiba Semiconductor and Storage MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
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100+0.89 EUR
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500+0.69 EUR
1000+0.55 EUR
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MT3S113P(TE12L,F) MT3S113P(TE12L,F) Toshiba Semiconductor and Storage MT3S113P_datasheet_en_20140301.pdf?did=2071&prodName=MT3S113P Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1.6W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
Produkt ist nicht verfügbar
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MT3S113P(TE12L,F) MT3S113P(TE12L,F) Toshiba Semiconductor and Storage MT3S113P_datasheet_en_20140301.pdf?did=2071&prodName=MT3S113P Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1.6W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
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TTC4116FU,LF TTC4116FU,LF Toshiba Semiconductor and Storage docget.jsp?did=4359&prodName=TTC4116FU Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TTC4116FU,LF TTC4116FU,LF Toshiba Semiconductor and Storage docget.jsp?did=4359&prodName=TTC4116FU Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 1319 Stücke:
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55+0.38 EUR
104+0.2 EUR
500+0.13 EUR
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TLP3406SRL(TP,E TLP3406SRL(TP,E Toshiba Semiconductor and Storage TLP3406SRL_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TLP3406SRL(TP,E TLP3406SRL(TP,E Toshiba Semiconductor and Storage TLP3406SRL_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
Produkt ist nicht verfügbar
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TLP3406SRH(TP,E TLP3406SRH(TP,E Toshiba Semiconductor and Storage TLP3406SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
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2500+6.34 EUR
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TLP3406SRH(TP,E TLP3406SRH(TP,E Toshiba Semiconductor and Storage TLP3406SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
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2+12.63 EUR
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100+7.69 EUR
500+6.89 EUR
1000+6.79 EUR
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TLP2355(E TLP2355(E Toshiba Semiconductor and Storage TLP2355_datasheet_en_20191119.pdf?did=11905&prodName=TLP2355 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 392 Stücke:
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11+1.99 EUR
16+1.39 EUR
125+1.01 EUR
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TPN2R903PL,L1Q TPN2R903PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55425&prodName=TPN2R903PL Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
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5000+0.61 EUR
15000+0.54 EUR
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TPN2R903PL,L1Q TPN2R903PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55425&prodName=TPN2R903PL Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 20094 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.49 EUR
14+1.56 EUR
50+1.17 EUR
100+1.04 EUR
500+0.81 EUR
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2SC4935-Y,Q(J 2SC4935_2010-12-21.pdf
2SC4935-Y,Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TLP241A(F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 3850 Stücke:
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9+2.57 EUR
10+2.3 EUR
25+2.2 EUR
50+2.12 EUR
100+2.05 EUR
300+1.94 EUR
500+1.89 EUR
1000+1.82 EUR
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TLP241A(LF1,F docget.jsp?did=14237&prodName=TLP241A
TLP241A(LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 278 Stücke:
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8+2.64 EUR
10+2.36 EUR
25+2.25 EUR
50+2.17 EUR
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TLP241A(D4,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(D4,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 1556 Stücke:
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7+3.25 EUR
10+2.88 EUR
25+2.75 EUR
50+2.65 EUR
100+2.57 EUR
300+2.43 EUR
500+2.37 EUR
1000+2.28 EUR
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TK160F10N1,LXGQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK160F10N1,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.39 EUR
3000+3.15 EUR
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TK160F10N1,LXGQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK160F10N1,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4332 Stücke:
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AnzahlPrivatkunde
3+9.37 EUR
10+6.19 EUR
50+4.83 EUR
100+4.4 EUR
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2SB1457,T6TOTOF(J 2SB1457_2009-12-21.pdf
2SB1457,T6TOTOF(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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TLP2630(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP2630(MAT,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP2630(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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SSM6N815R,LF docget.jsp?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
9000+0.3 EUR
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SSM6N815R,LF docget.jsp?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 30902 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
24+0.9 EUR
50+0.67 EUR
100+0.58 EUR
500+0.44 EUR
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TC7WZ08FK,LJ(CT docget.jsp?did=54672&prodName=TC7WZ08FK
TC7WZ08FK,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 4-INP US8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TC7SB3157CFU,LF(CT TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
6000+0.1 EUR
9000+0.099 EUR
15000+0.098 EUR
21000+0.096 EUR
30000+0.095 EUR
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TC7SB3157CFU,LF(CT TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 38631 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
112+0.19 EUR
126+0.17 EUR
149+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.12 EUR
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TRS12N65FB,S1Q docget.jsp?did=69233&prodName=TRS12N65FB
TRS12N65FB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 90 Stücke:
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3+9.2 EUR
30+5.09 EUR
60+4.61 EUR
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TK099V65Z,LQ TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z
TK099V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.84 EUR
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TK099V65Z,LQ TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z
TK099V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.95 EUR
10+8.34 EUR
100+6.76 EUR
500+6 EUR
1000+5.14 EUR
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TBD62781AFWG,EL TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG
TBD62781AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TBD62781AFWG,EL TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG
TBD62781AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.43 EUR
10+4.2 EUR
100+2.93 EUR
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TBD62786AFWG,EL TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG
TBD62786AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.49 EUR
2000+2.32 EUR
3000+2.24 EUR
5000+2.23 EUR
Mindestbestellmenge: 1000 Stücke
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TBD62786AFWG,EL TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG
TBD62786AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 6271 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.16 EUR
10+4.69 EUR
100+3.27 EUR
500+2.71 EUR
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TBD62786APG TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG
TBD62786APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
auf Bestellung 760 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7 EUR
20+4.11 EUR
100+3.24 EUR
500+2.65 EUR
Mindestbestellmenge: 3 Stücke
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2SA2215,LF docget.jsp?did=22651&prodName=2SA2215
2SA2215,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
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2SA2215,LF docget.jsp?did=22651&prodName=2SA2215
2SA2215,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
auf Bestellung 5290 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
29+0.74 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 18 Stücke
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TA76432AS,T6F(J TA76432A_Series_2011-09-29.pdf
TA76432AS,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S(F,M) TA76432FT%2CFC%2CF%2CFR%2CS.pdf
TA76432S(F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S(T6MURATFM TA76432FT,FC,F,FR,S.pdf
TA76432S(T6MURATFM
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S(TE6,F,M) TA76432FT%2CFC%2CF%2CFR%2CS.pdf
TA76432S(TE6,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,F(J TA76432FT%2CFC%2CF%2CFR%2CS.pdf
TA76432S,F(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,T6F(J TA76432FT,FC,F,FR,S.pdf
TA76432S,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,T6MURAF(J TA76432FT%2CFC%2CF%2CFR%2CS.pdf
TA76432S,T6MURAF(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,T6WNLF(J TA76432FT,FC,F,FR,S.pdf
TA76432S,T6WNLF(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S,WNLF(J TA76432FT,FC,F,FR,S.pdf
TA76432S,WNLF(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TA76L431S(T6SOY,AQ TA76L431FT%2CS.pdf
TA76L431S(T6SOY,AQ
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76L431S(T6SOY,QM TA76L431FT%2CS.pdf
TA76L431S(T6SOY,QM
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76L431S,Q(J TA76L431FT%2CS.pdf
TA76L431S,Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76L431S,T6Q(J TA76L431FT%2CS.pdf
TA76L431S,T6Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76L431S,T6Q(M TA76L431FT,S.pdf
TA76L431S,T6Q(M
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 0.5MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
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KIA78L24BP
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 24V DIP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TCR3DG10,LF docget.jsp?did=36247&prodName=TCR3DG10
TCR3DG10,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 300MA 4-WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1V
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.75V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.18 EUR
Mindestbestellmenge: 5000 Stücke
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TCR3DG10,LF docget.jsp?did=36247&prodName=TCR3DG10
TCR3DG10,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 300MA 4-WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1V
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.75V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
69+0.31 EUR
79+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
2500+0.18 EUR
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TRS16N65FB,S1Q datasheet_en_20200703.pdf?did=69235
TRS16N65FB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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RN2426(TE85L,F) docget.jsp?did=18885&prodName=RN2426
RN2426(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN2426(TE85L,F) docget.jsp?did=18885&prodName=RN2426
RN2426(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
auf Bestellung 1980 Stücke:
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TPH1R306PL,L1Q TPH1R306PL_datasheet_en_20191018.pdf?did=30818&prodName=TPH1R306PL
TPH1R306PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.7 EUR
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TPH1R306PL,L1Q TPH1R306PL_datasheet_en_20191018.pdf?did=30818&prodName=TPH1R306PL
TPH1R306PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 18964 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.95 EUR
10+3.86 EUR
50+2.95 EUR
100+2.67 EUR
500+2.15 EUR
Mindestbestellmenge: 4 Stücke
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MT3S113TU,LF MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU
MT3S113TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MT3S113TU,LF MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU
MT3S113TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
19+1.13 EUR
25+1.01 EUR
100+0.89 EUR
250+0.77 EUR
500+0.69 EUR
1000+0.55 EUR
Mindestbestellmenge: 17 Stücke
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MT3S113P(TE12L,F) MT3S113P_datasheet_en_20140301.pdf?did=2071&prodName=MT3S113P
MT3S113P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1.6W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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MT3S113P(TE12L,F) MT3S113P_datasheet_en_20140301.pdf?did=2071&prodName=MT3S113P
MT3S113P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1.6W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
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TTC4116FU,LF docget.jsp?did=4359&prodName=TTC4116FU
TTC4116FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TTC4116FU,LF docget.jsp?did=4359&prodName=TTC4116FU
TTC4116FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 1319 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
55+0.38 EUR
104+0.2 EUR
500+0.13 EUR
1000+0.09 EUR
Mindestbestellmenge: 44 Stücke
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TLP3406SRL(TP,E TLP3406SRL_Prelim_DS.pdf
TLP3406SRL(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLP3406SRL(TP,E TLP3406SRL_Prelim_DS.pdf
TLP3406SRL(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
Produkt ist nicht verfügbar
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TLP3406SRH(TP,E TLP3406SRH_Prelim_DS.pdf
TLP3406SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+6.34 EUR
Mindestbestellmenge: 2500 Stücke
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TLP3406SRH(TP,E TLP3406SRH_Prelim_DS.pdf
TLP3406SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 4840 Stücke:
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10+9.51 EUR
100+7.69 EUR
500+6.89 EUR
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TLP2355(E TLP2355_datasheet_en_20191119.pdf?did=11905&prodName=TLP2355
TLP2355(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 392 Stücke:
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TPN2R903PL,L1Q docget.jsp?did=55425&prodName=TPN2R903PL
TPN2R903PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 15000 Stücke:
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5000+0.61 EUR
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TPN2R903PL,L1Q docget.jsp?did=55425&prodName=TPN2R903PL
TPN2R903PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 20094 Stücke:
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9+2.49 EUR
14+1.56 EUR
50+1.17 EUR
100+1.04 EUR
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